CN110534909A - A kind of even Terahertz Meta Materials converter and preparation method thereof that can be switched with galvanic couple of the ring based on the reconstruct of MEMS planar structure - Google Patents
A kind of even Terahertz Meta Materials converter and preparation method thereof that can be switched with galvanic couple of the ring based on the reconstruct of MEMS planar structure Download PDFInfo
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Abstract
A kind of even Terahertz Meta Materials converter and preparation method thereof that can be switched with galvanic couple of the ring based on the reconstruct of MEMS planar structure, it is related to a kind of Terahertz Meta Materials converter and preparation method thereof that operating mode is changeable.Problem small the invention aims to solve plane Terahertz Meta Materials ring idol resonance tune depth, that external equipment needed for energisation mode is complicated, the optional narrow range of active material and linear properties are small.It includes bulk silicon, interdigitated electrode structure electro-static driving mechanism, fixed metal structure array, movable metal structure array and suspension silicon frame.Method: one, deposited silicon dioxide layer；Two, the photoresist mask pattern of anchor structure；Three, anchor structure is formed；Four, structure sheaf is bonded and is thinned；Five, metal structure unit figure；Six, photoresist mask pattern；Seven, silicon and release MEMS structure are etched.Present invention is mainly used for prepare the even Terahertz Meta Materials converter that can be switched with galvanic couple of ring.
Description
Technical field
The present invention relates to the Terahertz Meta Materials converters and preparation method thereof that a kind of operating mode can be switched.
Background technique
In classical dynamics, usually there are two big multipole subsystems, respectively electric multipole and magnetic multi-polar.This two mostly
In the subsystem of pole, the most common one is electric dipoles and magnetic dipole.Electric dipole is seen as by a pair of of opposite charges group
At system, since its scattering strength is big, EMR electromagnetic resonance line width is wider, can be used for antenna or localized sensor to detect near field；
Magnetic dipole can be equivalent to an electric current loop, and EMR electromagnetic resonance line width relative narrower can be used for Low-Power Nonlinearities processor or light
Learn Sensitive Apparatus.As third class radiation source, ring dipole is to be induced to generate a pair of contrary magnetic dipole by ring current
Son, and end to end state is presented, there is almost radiationless special electromagnetic characteristic, in core and Atomic Physics field, solid
Of science and classical electrodynamics field, which has, to be widely applied.But since the subpattern of ring dipole is very weak to incident electromagnetic wave response,
Cause in most cases its electromagnetic response it is very faint, often covered by stronger traditional electro magnetic extremely son, it is serious to hinder
The detection and application of ring dipole.
Meta Materials are a kind of sub-wavelength structure cell arrays of artificial constructed periodic arrangement, pass through reasonable design knot
Geometry, size and the arrangement mode of structure unit are, it can be achieved that the extraordinary electromagnetic property that nature material does not have, such as negative folding
It penetrates, the characteristics such as electromagnetism stealth and optical transform.Therefore, it by the structural unit of reasonable design Meta Materials, can effectively inhibit
Traditional electro magnetic dipole response, to enhance the response intensity of ring dipole, reaches Observable magnitude, this is to deeply
The electromagnetic property for studying ring dipole has important milestone meaning.By structure design and accurate preparation, have at present multiple
Ring dipole based on three-dimensional metamaterial structure be reported, it can be achieved that the limitation of good toroidal magnetic field and high-intensitive and high Q because
The ring idol resonance of son.However, the ring dipole preparation of three-dimensional Terahertz metamaterial structure is still due to being limited by preparation process
With very big challenge, the ring dipole of currently existing three-dimensional metamaterial structure is caused to operate mainly in microwave frequency band, very
Difficulty is realized in Terahertz high band.
In recent years, in order to realize the ring idol resonance of Terahertz or optical frequencies, Terahertz is realized using plane metamaterial structure
Ring idol resonance causes people's broad interest and concern, is increasingly becoming the new branch of Meta Materials research and hot spot, basic reason are
Plane Terahertz Meta Materials are easy preparation.Currently, it is occasionally humorous to design and prepare out the ring based on plane Terahertz metamaterial structure
Vibration, so that they all have potential application and application prospect in fields such as communication, safety detection, biochemical sensitives.However,
The existing ring idol resonance response based on plane metamaterial structure depends primarily on structural unit, and shape and size are once true
Fixed, corresponding resonant operational wavelength, amplitude and bandwidth is also fixed, and can only realize simple function in limited bandwidth of operation,
Seriously restrict and limit application range.
In order to overcome drawbacks described above, realized by collecting active materials in plane Terahertz metamaterial structure unit to ring
The dynamic regulation of even resonance, becomes one of sciemtifec and technical sphere of forefront, attracts the extensive interest and concern of people.For example,
2017, X.Chen et al. realized ring idol resonance using the plane Terahertz Meta Materials being made of square aperture ring resonator, when
When metamaterial structure and single-layer graphene are integrated, by change graphene Fermi can flexible modulation ring idol resonance transmission width
Degree.2018, M.Gupta et al. was prepared for the plane Terahertz Meta Materials being made of split ring resonator array, and in open seam
One layer of thin silicon structure is integrated at gap；When using 800nm laser pump (ing) metamaterial structure, the power by regulating and controlling pump light can
Flexible modulation ring idol resonance amplitude, and when the power of pump light increases to a certain extent, ring idol harmonic conversion can be made electric
Even resonance.However, since active material has frequency dependency attribute, washability limited and the complexity of external drive, it can not
What is avoided limits the modulation depth of ring idol resonance, these defects will be brought to the practical application of plane Meta Materials ring idol resonance
Very big difficulty, and limit its practical ranges.
Summary of the invention
It is small the invention aims to solve plane Terahertz Meta Materials ring idol resonant modulation depth, it is outer needed for energisation mode
The problem that the device is complicated in portion, the optional narrow range of active material and linear properties are small, and the one kind provided is based on MEMS planar junction
The even Terahertz Meta Materials converter and preparation method thereof that can be switched with galvanic couple of the ring of structure reconstruct.
A kind of even Terahertz Meta Materials converter that can be switched with galvanic couple of ring based on the reconstruct of MEMS planar structure, it includes
Bulk silicon, interdigitated electrode structure electro-static driving mechanism, fixed metal structure array, movable metal structure array and suspension silicon frame,
The interdigitated electrode structure electro-static driving mechanism and suspension silicon frame are arranged in bulk silicon, and suspension silicon frame and interdigitated electrode structure electrostatic drive
Dynamic structure connection, and suspension silicon frame is vacantly arranged, fixed metal structure array is arranged in suspension silicon frame, bulk silicon
On, movable metal structure array connect with suspension silicon frame, is vacantly arranged；The fixed metal structure array is by periodic arrangement
Structural detail composition, and the structural detail of fixed metal structure array is in " E " type structure, the movable metal structure array by
The structural detail of periodic arrangement forms, and the structural detail of movable metal structure array is in anti-" E " type structure, fixed metal knot
The structural detail of structure array and the structural detail of movable metal structure array are oppositely arranged in pairs, by the fixation being oppositely arranged in pairs
The even terahertz that can be switched with galvanic couple of structural detail group cyclization of the structural detail of metal structure array and movable metal structure array
The hereby functional architecture unit of Meta Materials.
A kind of preparation of the even Terahertz Meta Materials converter that can be switched with galvanic couple of ring based on the reconstruct of MEMS planar structure
Method is specifically realized by the following steps:
One, deposited silicon dioxide layer: utilizing Material growth technique, prepares layer of silicon dioxide passivation layer in silicon face；
Two, the photoresist mask pattern of anchor structure: using mechanical spin coating proceeding, one is uniformly coated in silica surface
Layer photoresist, through exposure and development and after fixing, photosensitive region photoresist is removed in development, is formed micrographics structure, is obtained
The graphical photoresist exposure mask of anchor structure；The photoresist is positive photoresist；
Three, anchor structure is formed: etching technics is utilized, 1., using the graphical photoresist of anchor structure as mask etching silica
Passivation layer, the silicon dioxide passivation layer after being etched, recycling go glue to remove photoresist；2., with etch after titanium dioxide
Silicon passivation layer is that exposure mask performs etching silicon face, the silicon dioxide passivation layer after removal etching, the silicon after being etched；It is described
Etching technics is wet etching or dry etching；
Four, structure sheaf is bonded and is thinned: Si-Si bonding process is utilized, by the silicon and the progress key of bulk silicon 1 after etching
Close, it is then armor coated at edge and bulk silicon lower surface, reuse KOH solution wet etching to the silicon after etching into
Row is thinned, and removal protective layer obtains silicon after being thinned；
Five, metal structure unit figure: 1., first with mechanical spin coating proceeding being thinned rear silicon face spin coating photoresist,
It through exposure and development and is fixed, using E type graphic array and anti-E type graphic array region as photosensitive region, obtains patterned photoetching
Glue；The photoresist is positive photoresist；2., deposited metal, metal layer thickness be 0.2 μm~0.4 μm, recycling remove glue removal figure
Shape photoresist, while the metal layer on graphical photoresist being removed, only retain the metal layer of photosensitive region deposition, that is, realizes
Silicon face deposition E type patterned metal element arrays and anti-E type patterned metal element arrays, obtain graphical gold after being thinned
Belong to metamaterial structure；
Six, photoresist mask pattern: using mechanical spin coating proceeding, in patterned metal metamaterial structure surface spin coating light
Photoresist through exposure and development and is fixed, and forms the micrographics structure of interdigitated electrode structure electro-static driving mechanism, the micrographics of suspension silicon frame
The micrographics structure of structure, the micrographics structure of fixed metal structure array and movable metal structure array, obtains micrographics knot
Structure photoresist mask pattern；
Seven, silicon and release MEMS structure are etched: exposure mask is made with micrographics structure photoresist mask pattern, using it is deep react from
Sub- lithographic technique carries out deep etching silicon, discharges MEMS structure, and dry method is recycled to remove photoresist, realizes interdigitated electrode structure electrostatic drive knot
Structure, suspension silicon frame, fixed metal structure array and movable metal structure array, obtain the ring reconstructed based on MEMS planar structure
The even Terahertz Meta Materials converter that can be switched with galvanic couple.
The principle of the invention and advantage:
1, the regulation method of traditional plane Terahertz Meta Materials ring idol resonance is by Terahertz Meta Materials and active material
It is integrated, change the attribute of structural unit active material or adjacent material by external drive, to flexibly effectively regulate and control terahertz
Hereby Meta Materials ring idol resonance.The more common active material of tradition is semiconductor material, phase-change material, superconductor, graphene
And liquid crystal material, tuning capability are obviously dependent on the nonlinear characteristic of active material, cause tuning range limited, and active material
Expect optional narrow range.Since the electromagnetic property of Terahertz Meta Materials depends on the size and shape of structural unit, and the present invention uses
Interdigitated electrode structure electro-static driving mechanism drives suspension silicon frame, and then drives movable metal structure array, realizes MEMS movable structure weight
The control methods of structure, from ring idol resonance structure substantially come the geometry, size and arrangement mode that change structural unit, without
It is the electromagnetic environment changed around structural unit, it is deep can be remarkably reinforced and improve plane Terahertz Meta Materials ring idol resonant modulation
Degree, and change the operating mode of Terahertz Meta Materials, solution conventional planar Terahertz Meta Materials ring idol resonance tune depth is small,
The problems such as external equipment needed for energisation mode is complicated, active material optional narrow range and linear properties are small.
2, the present invention drives movable metal structure array plane translation using interdigitated electrode structure electro-static driving mechanism, regulates and controls fixed gold
Belong to E type patterned metal element and anti-E type figure in the structural detail of movable metal structure array in the structural detail of array of structures
Distance and reconstituted state between shape hardware are, it can be achieved that carry out dual regulation to ring dipole.It can be cut when ring is even with galvanic couple
The spacing of E type patterned metal element and anti-E type patterned metal element in the functional architecture unit of the Terahertz Meta Materials changed
When from gradually changing, electromagnetic coupling strengths between E type patterned metal element and anti-E type patterned metal element can be changed, it is real
Now ring idol resonance amplitude is modulated；When E type patterned metal element becomes connecing with anti-E type patterned metal element from discrete state
, it can be achieved that working mode change between ring idol resonance and galvanic couple resonance when touching state.
3, the characteristics of line width of EMR electromagnetic resonance is depending on scattering phenomenon and intensity, the EMR electromagnetic resonance of different line widths can be realized not
The device of congenerous.Electric dipole, scattering strength is big, and EMR electromagnetic resonance line width is wider, can be used for antenna or localized sensor to visit
Survey near field etc.；Ring dipole, EMR electromagnetic resonance line width relative narrower, can be used for hypersensitization sensor, modulator, narrow band filter and
Device for non-linear optical etc..Due to the even super material of Terahertz that can be switched with galvanic couple of the ring reconstructed the present invention is based on MEMS planar structure
The conversion of the coupled mode between ring idol resonance and galvanic couple resonance may be implemented in material converter, so various multifunction devices can be realized
Conversion.
4, movable metal structure array plane translation is driven using interdigitated electrode structure electro-static driving mechanism due to the present invention, outside
Excitation uses electrostatic drive, and energisation mode is not related to complicated equipment, and control methods are simple, easily controllable, flexibility and reliability, preparation
Technical maturity and at low cost, to enhance the practicability of device.
5, the present invention is based on the even Terahertz Meta Materials converters that can be switched with galvanic couple of the ring of MEMS planar structure reconstruct to exist
Under TE wave or TM wave are incident, when two structural distances change in 0.05THz~1.2THz frequency range, electromagnetic response is by two
Resonance becomes a resonance, it can be achieved that biobelt and single tape filter converter.
Detailed description of the invention
Fig. 1 is the structure of the even Terahertz Meta Materials converter that can be switched with galvanic couple of ring reconstructed based on MEMS planar structure
Schematic diagram；1 indicates bulk silicon in figure, and 2 indicate interdigitated electrode structure electro-static driving mechanism, and 3 indicate fixed metal structure array, 4 tables
Show movable metal structure array, 5 indicate suspension silicon frame；
Fig. 2 is the structural schematic diagram of the even functional architecture unit that can be switched with galvanic couple of ring of discrete state；
Fig. 3 is the structural schematic diagram of the even functional architecture unit that can be switched with galvanic couple of ring of contact condition；
Fig. 4 is the left view of Fig. 2；1 indicates bulk silicon in figure, and 3-1 indicates that E type patterned metal element, 3-2 indicate
E type fixes silicon substrate, and 4-1 indicates that anti-E type patterned metal element, 4-2 indicate the anti-movable silicon substrate of E type；
Fig. 5 is the operation chart of growth technique in five step 1 of specific embodiment；
Fig. 6 is five step 3 of specific embodiment 1. middle etching silicon dioxide passivation layer schematic diagram；
Fig. 7 be five step 3 of specific embodiment 2. in schematic diagram is performed etching to silicon face；
Fig. 8 is to be bonded schematic diagram in five step 4 of specific embodiment；
Fig. 9 is metal structure unit figure schematic diagram in five step 5 of specific embodiment；
Figure 10 is discrete state, the transmission curve figure on TE wave vertical incidence Meta Materials surface when d is from 3 μm to 1 μm；
The transmission curve figure on TE wave vertical incidence Meta Materials surface when Figure 11 is d=0 μm；
Figure 12 is discrete state, d=3 μm, Meta Materials metal surface current distribution when the wave vertical incidence Meta Materials surface TE
And magnetic dipole directional diagram；
Figure 13 is contact condition, d=0 μm, Meta Materials metal surface current distribution when the wave vertical incidence Meta Materials surface TE
And electric dipole directional diagram；
TE wave vertical incidence numerical value calculates dipole moment component map when Figure 14 is d=3 μm, in figure ▲ indicate ring dipole moment in y
The component in direction, is denoted as Ty, ◆ indicate that electric dipole moment in the component in the direction y, is denoted as Py, ● indicate dipole moment in the direction x
Component is denoted as Mx；
The transmission curve figure on TM wave vertical incidence Meta Materials surface when Figure 15 is d=3 μm；
The transmission curve figure on TM wave vertical incidence Meta Materials surface when Figure 16 is d=0 μm；
Figure 17 is discrete state, d=3 μm, Meta Materials metal surface current distribution when the wave vertical incidence Meta Materials surface TM
And magnetic dipole directional diagram；
Figure 18 is contact condition, d=0 μm, Meta Materials metal surface current distribution when the wave vertical incidence Meta Materials surface TM
And electric dipole directional diagram；
TM wave vertical incidence numerical value calculates dipole moment component map when Figure 19 is d=3 μm, in figure ▲ indicate ring dipole moment in x
The component in direction, is denoted as Tx, ◆ indicate that electric dipole moment in the component in the direction x, is denoted as Px, ● indicate dipole moment in the direction z
Component is denoted as Mz.
Specific embodiment
Specific embodiment 1: present embodiment is that a kind of ring based on the reconstruct of MEMS planar structure is even and electric in conjunction with Fig. 1
Occasionally changeable Terahertz Meta Materials converter, it includes bulk silicon 1, interdigitated electrode structure electro-static driving mechanism 2, fixed metal knot
Structure array 3, movable metal structure array 4 and suspension silicon frame 5, the interdigitated electrode structure electro-static driving mechanism 2 and suspension silicon frame 5 are set
It sets in bulk silicon 1, suspension silicon frame 5 is connect with interdigitated electrode structure electro-static driving mechanism 2, and suspension silicon frame 5 is vacantly arranged,
Fixed metal structure array 3 is arranged in suspension silicon frame 5, in bulk silicon 1, movable metal structure array 4 and suspension silicon
The connection of frame 5, hanging setting；The fixed metal structure array 3 is made of the structural detail of periodic arrangement, and fixed metal
The structural detail of array of structures 3 be in " E " type structure, the movable metal structure array 4 by periodic arrangement structural detail group
At, and the structural detail of movable metal structure array 4 is in anti-" E " type structure, the structural detail of fixed metal structure array 3 with can
The structural detail of dynamic metal structure array 4 is oppositely arranged in pairs, by the structure for the fixation metal structure array 3 being oppositely arranged in pairs
The functional structure of the even Terahertz Meta Materials that can be switched with galvanic couple of structural detail group cyclization of element and movable metal structure array 4
Unit.
Specific embodiment 2: the difference of present embodiment and specific embodiment one is: described in conjunction with Fig. 1 to Fig. 4
The structural detail of fixed metal structure array 3 is made of the fixed silicon substrate 3-2 of E type patterned metal element 3-1 and E type, and E type is solid
Determine silicon substrate 3-2 to be arranged in bulk silicon 1, the graphical gold dollar category part 3-1 setting of E type is on the fixed silicon substrate 3-2 of E type；
The structural detail of the movable metal structure array 4 is by anti-E type patterned metal element 4-1 and the movable silicon substrate 4-2 group of anti-E type
At the anti-movable silicon substrate 4-2 of E type connect with suspension silicon frame 5, is vacantly arranged, and anti-E type patterned metal element 4-1 setting exists
On the anti-movable silicon substrate 4-2 of E type；The structure of the E type patterned metal element 3-1 and anti-E type patterned metal element 4-1 is joined
Count up to exactly the same, and E type patterned metal element 3-1 and anti-E type patterned metal element 4-1 is arranged in parallel.Other with it is specific
Embodiment one is identical.
Present embodiment E type in the functional architecture unit of the even Terahertz Meta Materials that can be switched with galvanic couple of ring is graphically golden
Belong to the structural unit that element 3-1 and anti-E type patterned metal element 4-1 constitutes Meta Materials.
Specific embodiment 3: the difference of present embodiment and specific embodiment one or two is in conjunction with Fig. 1 to Fig. 4:
Fixed in the functional architecture unit of the even Terahertz Meta Materials that can be switched with galvanic couple of ring the structural detail of metal structure array 3 with
The initial spacing of the structural detail of movable metal structure array 4 is 3 μm, by the electrode of interdigitated electrode structure electro-static driving mechanism 2
Load driver voltage V drives movable 4 plane translation of metal structure array, makes the even Terahertz Meta Materials that can be switched with galvanic couple of ring
Functional architecture unit in fix metal structure array 3 structural detail and the structural detail of movable metal structure array 4 phase
It adjusts the distance as d, 0 μm≤d≤3 μm.Other are the same as one or two specific embodiments.
Specific embodiment 4: the difference of present embodiment and specific embodiment one to three is in conjunction with Fig. 1 to Fig. 4:
A length of Qx of the functional architecture unit of the even Terahertz Meta Materials that can be switched with galvanic couple of the ring, Qx=210 μm, width Qy, Qy
=106 μm, the line width of E type patterned metal element 3-1 and anti-E type patterned metal element 4-1 are W, and W=10 μm, short side is long
For L, L=50 μm, long side a length of 2S, S=100 μm.Other are identical as specific embodiment one to three.
Specific embodiment 5: present embodiment is that a kind of ring based on the reconstruct of MEMS planar structure is even changeable with galvanic couple
Terahertz Meta Materials converter preparation method, be specifically realized by the following steps:
One, deposited silicon dioxide layer: utilizing Material growth technique, prepares layer of silicon dioxide passivation layer 7 on 6 surface of silicon；
Two, the photoresist mask pattern of anchor structure: using mechanical spin coating proceeding, one is uniformly coated in silica surface
Layer photoresist, through exposure and development and after fixing, photosensitive region photoresist is removed in development, is formed micrographics structure, is obtained
The patterned photoresist exposure mask of anchor structure；The photoresist is positive photoresist；
Three, anchor structure is formed: etching technics is utilized, 1., using the graphical photoresist of anchor structure as mask etching silica
Passivation layer 7, the silicon dioxide passivation layer 7-1 after being etched, recycling go glue to remove photoresist；2., with etch after two
Silicon oxide passivation layer 7-1 is that exposure mask performs etching 6 surface of silicon, and the silicon dioxide passivation layer 7-1 after removal etching is etched
Silicon 6-1 afterwards；The etching technics is wet etching or dry etching；
Four, structure sheaf is bonded and is thinned: utilizing Si-Si bonding process, the silicon 6-1 after etching is carried out with bulk silicon 1
Bonding, it is then armor coated at edge and bulk silicon lower surface, KOH solution wet etching is reused to the silicon after etching
6-1 carries out thinned, and removal protective layer obtains silicon 6-2 after being thinned；
Five, metal structure unit figure: 1., first with the surface the silicon 6-2 spin coating photoetching after being thinned of mechanical spin coating proceeding
Glue through exposure and development and is fixed, using E type graphic array and anti-E type graphic array region as photosensitive region, obtains patterned
Photoresist；The photoresist is positive photoresist；2., deposited metal, metal layer thickness be 0.2 μm~0.4 μm, recycling go glue to go
It is removed except graphical photoresist, while by the metal layer on graphical photoresist, only retains the metal layer of photosensitive region deposition, i.e.,
Realize the surface the silicon 6-2 deposition E type patterned metal element 3-1 array and 4-1 gusts of E type patterned metal element anti-after being thinned
Column, obtain patterned metal metamaterial structure；
Six, photoresist mask pattern: using mechanical spin coating proceeding, in patterned metal metamaterial structure surface spin coating light
Photoresist through exposure and development and is fixed, and forms the micrographics structure of interdigitated electrode structure electro-static driving mechanism 2, micro- figure of suspension silicon frame 5
The micrographics structure of shape structure, the micrographics structure of fixed metal structure array 3 and movable metal structure array 4, obtains micro- figure
Shape structure photoresist mask pattern；
Seven, silicon and release MEMS structure are etched: exposure mask is made with micrographics structure photoresist mask pattern, using it is deep react from
Sub- lithographic technique carries out deep etching silicon, discharges MEMS structure, and dry method is recycled to remove photoresist, realizes interdigitated electrode structure electrostatic drive knot
Structure 2, suspension silicon frame 5, fixed metal structure array 3 and movable metal structure array 4, obtain reconstructing based on MEMS planar structure
The even Terahertz Meta Materials converter that can be switched with galvanic couple of ring.
Specific embodiment 6: the difference of present embodiment and specific embodiment five is: material described in step 1
Growth technique is extension, chemical vapor deposition or thermal oxide.Other are identical as specific embodiment five.
Specific embodiment 7: the difference of present embodiment and specific embodiment five or six is: step 5 2. in institute
Deposit is stated as sputtering, vacuum evaporation or chemical vapor deposition, metal is Au, Cu or Al in the metal layer.Other and specific reality
It is identical to apply mode five or six.
Specific embodiment 8: the difference of present embodiment and specific embodiment five to seven is: described in step 4
The mass fraction of KOH is 40% in KOH solution.Other are identical as specific embodiment five to seven.
The content of present invention is not limited only to the content of the respective embodiments described above, the group of one of them or several specific embodiments
The purpose of invention also may be implemented in contract sample.
Using following verification experimental verifications effect of the present invention
Embodiment 1: in conjunction with Fig. 1 to Fig. 9, a kind of even terahertz that can be switched with galvanic couple of ring based on the reconstruct of MEMS planar structure
The hereby preparation method of Meta Materials converter, is specifically realized by the following steps:
One, deposited silicon dioxide layer: utilizing Material growth technique, prepares layer of silicon dioxide passivation layer 7 on 6 surface of silicon；
Two, photoresist mask pattern anchor structure: using mechanical spin coating proceeding, one layer is uniformly coated in silica surface
Photoresist, through exposure and development and after fixing, photosensitive region photoresist is removed in development, is formed micrographics structure, is obtained anchor
Structure patterning photoresist exposure mask；The photoresist is positive photoresist；
Three, anchor structure is formed: etching technics is utilized, 1., using the graphical photoresist of anchor structure as mask etching silica
Passivation layer 7, the silicon dioxide passivation layer 7-1 after being etched, recycling go glue to remove photoresist；2., with etch after two
Silicon oxide passivation layer 7-1 is that exposure mask performs etching 6 surface of silicon, and the silicon dioxide passivation layer 7-1 after removal etching is etched
Silicon 6-1 afterwards；The etching technics is wet etching or dry etching；
Four, structure sheaf is bonded and is thinned: utilizing Si-Si bonding process, the silicon 6-1 after etching is carried out with bulk silicon 1
Bonding, it is then armor coated at edge and bulk silicon lower surface, reuse the KOH solution wet process that mass fraction is 40%
Etching carries out the silicon 6-1 after etching thinned, and removal protective layer obtains silicon 6-2 after being thinned；
Five, metal structure unit figure: 1., first with the surface the silicon 6-2 spin coating photoetching after being thinned of mechanical spin coating proceeding
Glue through exposure and development and is fixed, using E type graphic array and anti-E type graphic array region as photosensitive region, obtains patterned
Photoresist；The photoresist is positive photoresist；2., deposited metal, metal layer thickness be 0.2 μm, recycling go glue remove figure
Change photoresist, while the metal layer on graphical photoresist being removed, only retains the metal layer of photosensitive region deposition, that is, realize
The surface silicon 6-2 deposition E type patterned metal element 3-1 array and anti-E type patterned metal element 4-1 array, obtain after being thinned
Patterned metal metamaterial structure；
Six, photoresist mask pattern: using mechanical spin coating proceeding, in patterned metal metamaterial structure surface spin coating light
Photoresist through exposure and development and is fixed, and forms the micrographics structure of interdigitated electrode structure electro-static driving mechanism 2, micro- figure of suspension silicon frame 5
The micrographics structure of shape structure, the micrographics structure of fixed metal structure array 3 and movable metal structure array 4, obtains micro- figure
Shape structure photoresist mask pattern；
Seven, silicon and release MEMS structure are etched: exposure mask is made with micrographics structure photoresist mask pattern, using it is deep react from
Sub- lithographic technique carries out deep etching silicon, discharges MEMS structure, and dry method is recycled to remove photoresist, realizes interdigitated electrode structure electrostatic drive knot
Structure 2, suspension silicon frame 5, fixed metal structure array 3 and movable metal structure array 4, obtain reconstructing based on MEMS planar structure
The even Terahertz Meta Materials converter that can be switched with galvanic couple of ring.
Material growth technique described in step 1 is chemical vapor deposition；The chemical vapor deposition (CVD) utilizes silane
The achievable SiO that undopes is reacted with oxygen2The deposit of film.Specific reaction process is when by a large amount of N2The diluted SiH of gas4With mistake
When the mixed gas of amount oxygen is heated to 250~450 DEG C, silane and oxygen reaction generate silica and are deposited on silicon wafer table
Face obtains silicon dioxide deposition with a thickness of 300nm.
Step 5 2. described in deposit be sputtering, metal is Al in the metal layer.The sputtering method is that physical vapor is formed sediment
A kind of method of product film is to have the characteristics that certain kinetic energy after accelerating in the electric field using the ion with charge, by ion
Guide the target electrode to be sputtered (Al) into, in the suitable situation of ion energy, the collision of incident ion and target surface atom
Sputter out target atom (Al atom) in journey, these Al atoms for being sputtered out will have certain kinetic energy, and along certain
Direction directive substrate, to realize surface deposition film on substrate, the deposition thickness of metal Al is 0.2 μm.
The even Terahertz Meta Materials converter that can be switched with galvanic couple of the ring based on the reconstruct of MEMS planar structure includes base
Body silicon substrate 1, interdigitated electrode structure electro-static driving mechanism 2, fixed metal structure array 3, movable metal structure array 4 and suspension silicon frame
5, the interdigitated electrode structure electro-static driving mechanism 2 and suspension silicon frame 5 are arranged in bulk silicon 1, suspension silicon frame 5 and interdigitated electrode structure
Electro-static driving mechanism 2 connects, and suspension silicon frame 5 is vacantly arranged, fixed metal structure array 3 is arranged in suspension silicon frame 5,
In bulk silicon 1, movable metal structure array 4 connect with suspension silicon frame 5, is vacantly arranged；The fixed metal structure battle array
Column 3 are made of the structural detail of periodic arrangement, and the structural detail of fixed metal structure array 3 is in " E " type structure, it is described can
Dynamic metal structure array 4 is made of the structural detail of periodic arrangement, and the structural detail of movable metal structure array 4 is in anti-
" E " type structure, the structural detail of fixed metal structure array 3 and the structural detail of movable metal structure array 4 are set relatively in pairs
It sets, by the structural detail group of the structural detail and movable metal structure array 4 of the fixation metal structure array 3 being oppositely arranged in pairs
The functional architecture unit of the cyclic even Terahertz Meta Materials that can be switched with galvanic couple；The structural elements of the fixed metal structure array 3
Part is made of the fixed silicon substrate 3-2 of E type patterned metal element 3-1 and E type, and the fixed silicon substrate 3-2 setting of E type is served as a contrast in matrix silicon
On bottom 1, E type patterned metal element 3-1 setting is on the fixed silicon substrate 3-2 of E type；The knot of the movable metal structure array 4
Constitutive element part is made of anti-E type patterned metal element 4-1 and the movable silicon substrate 4-2 of anti-E type, the anti-movable silicon substrate 4-2 of E type and outstanding
The floating connection of silicon frame 5, hanging setting, anti-E type patterned metal element 4-1 are arranged on the movable silicon substrate 4-2 of anti-E type；The E
Type patterned metal element 3-1 is identical with the structural parameters of anti-E type patterned metal element 4-1, and E type patterned metal
Element 3-1 is arranged in parallel with anti-E type patterned metal element 4-1；In the function of the even Terahertz Meta Materials that can be switched with galvanic couple of ring
Can fix in structural unit the structural detail of metal structure array 3 and the structural detail of movable metal structure array 4 it is initial between
Away from being 3 μm, by the load driver voltage V on the electrode of interdigitated electrode structure electro-static driving mechanism 2, movable metal structure array 4 is driven
Plane translation makes to fix metal structure array 3 in the functional architecture unit of the even Terahertz Meta Materials that can be switched with galvanic couple of ring
The relative distance of the structural detail of structural detail and movable metal structure array 4 is d, 0 μm≤d≤3 μm；The ring idol and galvanic couple
A length of Qx of the functional architecture unit of changeable Terahertz Meta Materials, Qx=210 μm, width Qy, Qy=106 μm, E type figure
The line width for changing hardware 3-1 and anti-E type patterned metal element 4-1 is W, W=10 μm, short side a length of L, L=50 μm, long side
A length of 2S, S=100 μm.
It is even changeable too with galvanic couple that the ring that embodiment 1 is reconstructed based on MEMS planar structure is detected under TE wave vertical incidence
Hertz Meta Materials converter is discrete state in conjunction with Figure 10 to 14, Figure 10, TE wave vertical incidence Meta Materials when d is from 3 μm to 1 μm
The transmission curve figure on surface；The transmission curve figure on TE wave vertical incidence Meta Materials surface when Figure 11 is d=0 μm；Figure 12 is separation
State, d=3 μm, Meta Materials metal surface current distribution and magnetic dipole directional diagram when the wave vertical incidence Meta Materials surface TE；Figure
13 be contact condition, d=0 μm, Meta Materials metal surface current distribution and electric dipole when the wave vertical incidence Meta Materials surface TE
Directional diagram；TE wave vertical incidence numerical value calculates dipole moment component map when Figure 14 is d=3 μm, in figure ▲ indicate ring dipole moment in the side y
To component, be denoted as Ty, ◆ indicate electric dipole moment in the component in the direction y, be denoted as Py, ● indicate dipole moment the direction x point
Amount, is denoted as Mx.As shown in Figure 10, under TE wave vertical incidence, when d is from 3 μm to 1 μm, in 0.05~1.2THz frequency range
There are two resonance, resonance frequency is respectively 0.48THz and 0.922THz.First resonance is ring dipole resonance, second
A resonance is electric dipole resonance.As distance d gradually becomes smaller, the amplitude of first ring dipole resonance is gradually become shallower as.Pass through
Figure 11 applies voltage to interdigitated electrode structure electro-static driving mechanism, sends out movable metal structure array 4 it is found that under TE wave vertical incidence
Raw planar movement, until with the fixed formation of metal structure array 3 contact condition, i.e., d=0 μm, at this time in 0.05~1.2THz frequency range
Inside only one resonance of appearance, resonance frequency 0.48THz, first resonance frequency when with d=3 μm are identical.It can by Figure 12
Know, in the case where TE wave is incident, when movable metal structure array 4 and fixed metal structure array 3 are in discrete state, at d=3 μm,
The electric current annular spread opposite in both direction in metal surface at first resonance point, and magnetic dipoleIt is contrary, performance
For ring dipole response modes.By 13 it is found that in the case where TE wave is incident, when movable metal structure array 4 and fixed metal structure
When array 3 is in contact condition, the metal surface electric current at resonance point 0.48THz is directed toward same direction, electric dipoleDirection
It is identical, show as electric dipole response modes.As shown in Figure 14, under TE wave vertical incidence, at d=3 μm, in resonance frequency
At 0.48THz, ring dipole moment component Ty is significantly increased.Figure 10 to 14 is combined as a result, and the present invention is based on the reconstruct of MEMS planar structure
The even Terahertz Meta Materials converter that can be switched with galvanic couple of ring can realize that amplitude modulation, biobelt and the single tape of ring dipole filter
The switching of conversion and ring idol and galvanic couple under same frequency.
It is even changeable too with galvanic couple that the ring that embodiment 1 is reconstructed based on MEMS planar structure is detected under TM wave vertical incidence
The transmission curve on TM wave vertical incidence Meta Materials surface when hertz Meta Materials converter in conjunction with Figure 15 to 19, Figure 15 is d=3 μm
Figure；The transmission curve figure on TM wave vertical incidence Meta Materials surface when Figure 16 is d=0 μm；Figure 17 is discrete state, d=3 μm, TM
Meta Materials metal surface current distribution and magnetic dipole directional diagram when wave vertical incidence Meta Materials surface；Figure 18 is contact condition, d
=0 μm, Meta Materials metal surface current distribution and electric dipole directional diagram when the wave vertical incidence Meta Materials surface TM；Figure 19 is d
TM wave vertical incidence numerical value calculates dipole moment component map at=3 μm, in figure ▲ indicate that ring dipole moment in the component in the direction x, is denoted as
Tx, ◆ indicate that electric dipole moment in the component in the direction x, is denoted as Px, ● indicate that dipole moment in the component in the direction z, is denoted as Mz.Pass through
When d=3 μm, there is two resonance, resonance frequency it is found that under TM wave vertical incidence in 0.05~1.2THz frequency range in Figure 15
Rate is respectively 0.196THz and 0.398THz.As shown in Figure 16, under TM wave vertical incidence, to interdigitated electrode structure electro-static driving mechanism
Apply voltage, make movable metal structure array 4 that planar movement occur, until forming contact condition with fixed metal structure array 3, i.e.,
D=0 μm, only occur a resonance, resonance frequency 0.405THz in 0.05~1.2THz frequency range at this time.It can by Figure 17
Know, under TM wave vertical incidence, when movable metal structure array 4 and fixed metal structure array 3 are in discrete state, d=3 μm
When, metal surface electric current is in the identical annular spread of both direction at first resonance point, and magnetic dipoleDirection is identical, table
It is now magnetic dipole response modes.By 18 it is found that under TM wave vertical incidence, when movable metal structure array 4 and fixed gold
Belong to array of structures 3 and be in contact condition, at d=0 μm, metal surface electric current direction same direction at resonance point 0.405THz,
Electric dipoleDirection is identical, shows as electric dipole response modes.As shown in Figure 19, under TM wave vertical incidence, d=3 μ
When m, at resonance frequency 0.196THz, dipole moment component Mz is significantly increased.In conjunction with Figure 15 to 19, it is flat that the present invention is based on MEMS
The even Terahertz Meta Materials converter that can be switched with galvanic couple of the ring of face structural remodeling can realize that biobelt and single tape filtering are converted.
Claims (8)
1. a kind of even Terahertz Meta Materials converter that can be switched with galvanic couple of ring based on the reconstruct of MEMS planar structure, feature exist
Include bulk silicon (1), interdigitated electrode structure electro-static driving mechanism (2), fix metal structure array (3), movable metal structure in it
Array (4) and suspension silicon frame (5), the interdigitated electrode structure electro-static driving mechanism (2) and suspension silicon frame (5) setting are served as a contrast in matrix silicon
On bottom (1), suspension silicon frame (5) is connect with interdigitated electrode structure electro-static driving mechanism (2), and suspension silicon frame (5) is vacantly arranged, fixed
Metal structure array (3) setting is in the suspension silicon frame (5), in bulk silicon (1), movable metal structure array (4) and outstanding
Floating silicon frame (5) connection, hanging setting；The fixed metal structure array (3) is made of the structural detail of periodic arrangement, and
The structural detail of fixed metal structure array (3) is in " E " type structure, and the movable metal structure array (4) is by periodic arrangement
Structural detail composition, and the structural detail of movable metal structure array (4) is in anti-" E " type structure, fixed metal structure array
(3) structural detail and the structural detail of movable metal structure array (4) are oppositely arranged in pairs, by the fixation being oppositely arranged in pairs
The structural detail of metal structure array (3) and the structural detail group cyclization of movable metal structure array (4) are even changeable with galvanic couple
Terahertz Meta Materials functional architecture unit.
2. the even Terahertz that can be switched with galvanic couple of a kind of ring based on the reconstruct of MEMS planar structure according to claim 1 is super
Material converter, it is characterised in that the structural detail of the fixed metal structure array (3) is by E type patterned metal element (3-
1) it is arranged on bulk silicon (1) with E type fixed silicon substrate (3-2) composition, E type fixed silicon substrate (3-2), E type is graphical
Hardware (3-1) setting is on E type fixed silicon substrate (3-2)；The structural detail of the movable metal structure array (4) is by anti-
E type patterned metal element (4-1) and the anti-movable silicon substrate of E type (4-2) composition, the anti-movable silicon substrate of E type (4-2) and suspension silicon
Frame (5) connection, hanging setting, anti-E type patterned metal element (4-1) are arranged on the anti-movable silicon substrate of E type (4-2)；Institute
It is identical with the structural parameters of anti-E type patterned metal element (4-1) to state E type patterned metal element (3-1), and E type figure
Shape hardware (3-1) is arranged in parallel with anti-E type patterned metal element (4-1).
3. the even Terahertz that can be switched with galvanic couple of a kind of ring based on the reconstruct of MEMS planar structure according to claim 2 is super
Material converter, it is characterised in that fix metal in the functional architecture unit of the even Terahertz Meta Materials that can be switched with galvanic couple of ring
The initial spacing of the structural detail of array of structures (3) and the structural detail of movable metal structure array (4) is 3 μm, by combing
Load driver voltage V on the electrode of flute profile electro-static driving mechanism (2) drives movable metal structure array (4) plane translation, makes ring
Fixed in the functional architecture unit of the even Terahertz Meta Materials that can be switched with galvanic couple the structural detail of metal structure array (3) with can
The relative distance of the structural detail of dynamic metal structure array (4) is d, 0 μm≤d≤3 μm.
4. the even Terahertz that can be switched with galvanic couple of a kind of ring based on the reconstruct of MEMS planar structure according to claim 3 is super
Material converter, it is characterised in that the functional architecture unit of the even Terahertz Meta Materials changeable with galvanic couple of the ring it is a length of
Qx, Qx=210 μm, width Qy, Qy=106 μm, E type patterned metal element (3-1) and anti-E type patterned metal element (4-
1) line width is W, W=10 μm, short side a length of L, L=50 μm, long side a length of 2S, S=100 μm.
5. the even super material of Terahertz that can be switched with galvanic couple of a kind of ring based on the reconstruct of MEMS planar structure as described in claim 1
Expect the preparation method of converter, it is characterised in that it is completed by the following steps:
One, deposited silicon dioxide layer: utilizing Material growth technique, prepares layer of silicon dioxide passivation layer (7) on silicon (6) surface；
Two, the photoresist mask pattern of anchor structure: using mechanical spin coating proceeding, one layer of light is uniformly coated in silica surface
Photoresist, through exposure and development and after fixing, photosensitive region photoresist is removed in development, is formed micrographics structure, is obtained anchor knot
The graphical photoresist exposure mask of structure；The photoresist is positive photoresist；
Three, anchor structure is formed: being utilized etching technics, 1., by mask etching silica of the graphical photoresist of anchor structure is passivated
Layer (7), the silicon dioxide passivation layer (7-1) after being etched, recycling go glue to remove photoresist；2., with etch after two
Silicon oxide passivation layer (7-1) is that exposure mask performs etching silicon (6) surface, and the silicon dioxide passivation layer (7-1) after removal etching obtains
Silicon (6-1) after to etching；The etching technics is wet etching or dry etching；
Four, structure sheaf bonding and be thinned: utilize Si-Si bonding process, by after etching silicon (6-1) and bulk silicon (1) carry out
Bonding, it is then armor coated at edge and bulk silicon (1) lower surface, after reusing KOH solution wet etching to etching
Silicon (6-1) carry out it is thinned, removal protective layer obtain be thinned after silicon (6-2)；
Five, metal structure unit figure: 1., first with mechanical spin coating proceeding being thinned rear silicon (6-2) surface spin coating photoresist,
It through exposure and development and is fixed, using E type graphic array and anti-E type graphic array region as photosensitive region, obtains patterned photoetching
Glue；The photoresist is positive photoresist；2., deposited metal, metal layer thickness be 0.2 μm~0.4 μm, recycling remove glue removal figure
Shape photoresist, while the metal layer on graphical photoresist being removed, only retain the metal layer of photosensitive region deposition, that is, realizes
The silicon surface (6-2) deposition E type patterned metal element (3-1) array and anti-E type patterned metal element (4-1) battle array after being thinned
Column, obtain patterned metal metamaterial structure；
Six, photoresist mask pattern: using mechanical spin coating proceeding, in the spin coating photoetching of patterned metal metamaterial structure surface
Glue, through exposure and development and fixing, formed the micrographics structure of interdigitated electrode structure electro-static driving mechanism (2), suspension silicon frame (5) it is micro-
The micrographics structure of graphic structure, the micrographics structure of fixed metal structure array (3) and movable metal structure array (4), obtains
To micrographics structure photoresist mask pattern；
Seven, silicon and release MEMS structure are etched: exposure mask being made with micrographics structure photoresist mask pattern, is carved using deep reactive ion
Erosion technology carries out deep etching silicon, discharges MEMS structure, and dry method is recycled to remove photoresist, realizes interdigitated electrode structure electro-static driving mechanism
(2), suspension silicon frame (5), fixed metal structure array (3) and movable metal structure array (4), obtain based on MEMS planar junction
The even Terahertz Meta Materials converter that can be switched with galvanic couple of the ring of structure reconstruct.
6. the even Terahertz that can be switched with galvanic couple of a kind of ring based on the reconstruct of MEMS planar structure according to claim 5 is super
The preparation method of material converter, it is characterised in that Material growth technique described in step 1 be extension, chemical vapor deposition or
Thermal oxide.
7. the even Terahertz that can be switched with galvanic couple of a kind of ring based on the reconstruct of MEMS planar structure according to claim 5 is super
The preparation method of material converter, it is characterised in that step 5 2. described in deposit be sputtering, vacuum evaporation or chemical gaseous phase are formed sediment
Long-pending, metal is Au, Cu or Al in the metal layer.
8. the even Terahertz that can be switched with galvanic couple of a kind of ring based on the reconstruct of MEMS planar structure according to claim 5 is super
The preparation method of material converter, it is characterised in that the mass fraction of KOH is 40% in KOH solution described in step 4.
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