CN111273467B - Terahertz wavefront phase control device based on liquid crystal and wire grid metasurface - Google Patents

Terahertz wavefront phase control device based on liquid crystal and wire grid metasurface Download PDF

Info

Publication number
CN111273467B
CN111273467B CN202010084176.5A CN202010084176A CN111273467B CN 111273467 B CN111273467 B CN 111273467B CN 202010084176 A CN202010084176 A CN 202010084176A CN 111273467 B CN111273467 B CN 111273467B
Authority
CN
China
Prior art keywords
terahertz
metasurface
liquid crystal
phase control
control device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010084176.5A
Other languages
Chinese (zh)
Other versions
CN111273467A (en
Inventor
杨原牧
陈赛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Original Assignee
Tsinghua University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsinghua University filed Critical Tsinghua University
Priority to CN202010084176.5A priority Critical patent/CN111273467B/en
Publication of CN111273467A publication Critical patent/CN111273467A/en
Application granted granted Critical
Publication of CN111273467B publication Critical patent/CN111273467B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0136Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00Function characteristic
    • G02F2203/13Function characteristic involving THZ radiation
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00Function characteristic
    • G02F2203/50Phase-only modulation

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

本发明提出了一种基于液晶和线栅形超构表面的太赫兹波前相位控制装置,包括由下至上依次层叠的衬底、反射镜、电介质隔离层、由在线栅形超构表面电极中相邻栅极间灌注液晶形成的超构表面结构层、以及透射介质层,p偏振方向设定频率的太赫兹电磁波束由透射介质层射入;当超构表面电极接入外加电压时,对液晶施加的电压方向与太赫兹电磁波束传输方向正交。其中,超构表面电极中的间隔栅极彼此串联,形成叉指阵列电极,各间隔栅极接入相同的外加电压;或者超构表面电极中的各栅极彼此独立,用于分别控制接入各栅极的外加电压。本发明通过对液晶施加与太赫兹电磁波束传输方向正交的电压,并在可观的调制速率下实现对太赫兹电磁波束的波前相位控制。

Figure 202010084176

The invention proposes a terahertz wavefront phase control device based on liquid crystal and wire grid metasurface, which comprises a substrate, a mirror, a dielectric isolation layer which are sequentially stacked from bottom to top, and a wire grid metasurface electrode formed by The metasurface structure layer and the transmissive medium layer formed by perfusion of liquid crystals between adjacent gates, the terahertz electromagnetic beam with the frequency set in the p-polarization direction is injected from the transmissive medium layer; when the metasurface electrode is connected to an applied voltage, the The direction of the voltage applied by the liquid crystal is orthogonal to the transmission direction of the terahertz electromagnetic beam. Among them, the spaced gates in the metasurface electrodes are connected in series with each other to form an interdigitated array electrode, and each spaced gate is connected to the same applied voltage; or the gates in the metasurface electrodes are independent of each other and are used to control the access respectively. applied voltage to each gate. The invention realizes the wavefront phase control of the terahertz electromagnetic beam under a considerable modulation rate by applying a voltage orthogonal to the transmission direction of the terahertz electromagnetic beam to the liquid crystal.

Figure 202010084176

Description

Terahertz wave front phase control device based on liquid crystal and wire grid-shaped super-structure surface
Technical Field
The invention can be applied to the field related to terahertz waveband electromagnetic wave phase modulation, and particularly relates to a terahertz wave front phase control device based on liquid crystal and a wire grid-shaped super-structure surface.
Background
In the field of application of terahertz wave technology, the method has great significance for rapidly and efficiently modulating information such as intensity, phase and the like of terahertz wave signals in micro-nano scale and applying a plurality of terahertz waves. A Metasurface (Metasurface) refers to an array of electromagnetic antennas made of sub-wavelength structures. On a mesoscopic scale, through reasonable design of the appearance and arrangement of the optical antenna, the ultrastructural surface can effectively regulate and control parameters such as amplitude, phase and polarization of electromagnetic waves in a two-dimensional plane, the limitation of the traditional electromagnetic law is broken through, and the electromagnetic waves can be effectively cut on a sub-wavelength scale. The liquid crystal is a dielectric anisotropic material, and under the action of an applied electric field, the arrangement direction of liquid crystal molecules changes along with the magnitude of the electric field, so that the dielectric constant of the liquid crystal is changed. Based on the electric control adjustable characteristic of the dielectric constant of the liquid crystal material, the liquid crystal material is combined with a super-structure surface, and can be widely applied to various terahertz wave phase modulation devices and intensity modulation devices. In 2019, a research scholars such as Yin reports an electro-optic terahertz wave intensity modulation device based on liquid crystal and metal plasma Metamaterial (Metamaterial), the electro-optic intensity modulation device utilizes liquid crystal to be poured into a designed double-layer Metamaterial to form a composite structure, and the optical property of the liquid crystal can be changed by applying voltage, so that the frequency corresponding to the resonance of the device is changed, and the intensity modulation of a reflected light beam with a specific frequency is realized. In 2020, the researchers of Fan Chang and the like report a terahertz phase modulator based on the liquid crystal and silicon medium ultrastructural surface, the electro-optical intensity modulation device utilizes the liquid crystal to be poured into the silicon ultrastructural surface to form a composite structure, and the optical property of the liquid crystal can be changed by applying voltage, so that the optical response of the device is changed, and further the modulation of the phase of a transmitted light beam is realized. The two electro-optical devices realize large-amplitude modulation on the intensity or phase of the electromagnetic wave beam in the terahertz wave band. However, the electrode spacing for applying a voltage to the liquid crystal is in the order of hundreds of micrometers. These problems bring about limitations such as slow modulation rate and high applied voltage of the device, and further limit their practical applications. The specific analysis is as follows:
the response time of the liquid crystal includes increasing the rise time tau of the electric fieldonAnd decreasing the fall time tau of the electric fieldoffWhich can be respectively expressed as:
Figure BDA0002381445700000021
Figure BDA0002381445700000022
wherein, tau0The time for the liquid crystal director to change to the original 1/e; gamma ray1Is the viscosity coefficient of the liquid crystal; k33Is the bending elastic constant; and d is the liquid crystal electrode spacing. V is an applied voltage; vthIs the threshold voltage of the applied voltage. It can be derived from the formula that the response time of the liquid crystal when the voltage rises and falls is seriously affected by the too large distance between the liquid crystal electrodes, and the response time when the voltage rises can be reduced by increasing the applied voltage.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a terahertz wave front phase modulation device based on liquid crystal and a wire grid-shaped metamaterial surface. The invention can realize the wave front phase modulation of the terahertz electromagnetic wave beam under a considerable modulation rate by externally adding voltage.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a terahertz wave front phase control device based on liquid crystal and a wire grid-shaped super-structure surface, which is characterized by comprising a substrate, a reflector, a dielectric isolation layer, a super-structure surface structure layer and a transmission dielectric layer, wherein the substrate, the reflector, the dielectric isolation layer, the super-structure surface structure layer and the transmission dielectric layer are sequentially stacked from bottom to top; when the super-structure surface electrode is connected with an external voltage, the direction of the voltage applied to the liquid crystal is orthogonal to the transmission direction of the terahertz electromagnetic wave beam.
Furthermore, the spaced grids in the super-structure surface electrode are connected in series to form an interdigital array electrode, and the spaced grids are connected with the same external voltage. Or the grids in the super-structure surface electrode are independent of each other and are used for respectively controlling the applied voltage connected to the grids.
Furthermore, the period of the super-structure surface electrode is in a sub-wavelength scale, and the distance between two adjacent grid electrodes is 1-50 microns; each grid electrode in the super-structure surface electrode is a single layer formed by materials which are transparent and conductive to terahertz electromagnetic wave beams, or is a composite layer formed by a conductive layer and the single layer; the thickness of the single layer is in a sub-wavelength scale, and the thickness of the conductive layer is 10 nanometers to 1 micrometer.
Furthermore, the set frequency of the terahertz electromagnetic wave beam is 0.1THz-5 THz.
The invention has the following remarkable advantages:
the invention designs a super-structure surface structure with strong response to terahertz wave phase based on the optical characteristics of liquid crystal. Through reasonable design, under the change of the liquid crystal refractive index, the structure can form phase change of more than 300 degrees for the terahertz wave in the p polarization direction in the frequency range of 0.1THz to 5 THz. Meanwhile, because the device applies voltage in the direction orthogonal to the transmission direction of the electromagnetic wave based on the wire grid-shaped super-structure surface electrode, the electrode spacing of the liquid crystal is controlled to be in the order of ten microns or micron (the size is reduced by about 10 times compared with the electrode spacing of the traditional terahertz waveband liquid crystal modulator), higher modulation rate can be realized, and the amplitude of the applied voltage can be effectively reduced. In addition, the voltage of each wire grid super-structure surface electrode can be independently controlled, so that the wave front phase distribution of the emergent terahertz waves can be effectively regulated and controlled; further, by applying voltages to different electrodes, the modulation functions of phase, wavefront (convergence, deflection, and the like), and polarization of the terahertz wave beam can be realized. Since the size of the structure is related to the wavelength of the applied electromagnetic wave, the device can be applied to microwave, infrared and visible light bands by changing materials and scaling.
Drawings
FIG. 1 is a cross-sectional view of a terahertz wave front phase control device based on liquid crystal and a wire grid-shaped metamaterial surface, wherein a single layer is adopted as a metamaterial surface electrode.
Fig. 2 is a top view of the terahertz wavefront phase control apparatus shown in fig. 1.
FIG. 3 is a cross-sectional view of a terahertz wave front phase control device based on liquid crystal and a wire grid-shaped metamaterial surface, wherein a composite layer is adopted as a metamaterial surface electrode.
FIG. 4 is a top view of a terahertz wave front phase control device based on liquid crystal and a wire grid-shaped metamaterial surface, wherein an interdigital array is adopted as the metamaterial surface electrode.
Fig. 5 is a schematic view showing the alignment of liquid crystal molecules in the phase modulator according to embodiment 1 of the present invention when no external voltage is applied, wherein the incident direction of the terahertz wave is perpendicular to the plane of the paper.
Fig. 6 is a schematic view showing the alignment of liquid crystal molecules in the phase modulator according to example 1 of the present invention when an external voltage is applied, in which the incident direction of the terahertz wave is perpendicular to the plane of the paper.
Fig. 7 is a graph showing the variation of the reflection phase of the terahertz wave with the increase of the refractive index of the liquid crystal at normal incidence in embodiment example 1 of the present invention.
Fig. 8 is a graph showing the variation of the reflection energy of the terahertz wave with the increase of the refractive index of the liquid crystal at normal incidence in embodiment example 1 of the present invention.
Fig. 9 is a schematic diagram of the structure of the phased array in embodiment 2 of the present invention.
Fig. 10 is a schematic diagram of the phased array implementing directional deflection of reflected beams in embodiment 2 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the scope of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
In order to better understand the invention, an application example of the terahertz wave front phase control device based on the liquid crystal and the wire grid-shaped metamaterial surface is explained in detail below.
Fig. 1 to fig. 3 show structural schematic diagrams of a terahertz wave front phase control device based on liquid crystal and a wire grid-shaped metamaterial surface according to the present invention. The wave front phase control device comprises a substrate 5, a reflector 4, a dielectric isolation layer 3, a super-structure surface structure layer formed by pouring liquid crystal 1 between adjacent grids in a linear grid-shaped super-structure surface electrode 2 and a transmission dielectric layer 6 which are sequentially stacked from bottom to top, wherein a terahertz electromagnetic wave beam 7 with p polarization direction set frequency (the frequency range is 0.1THz-5 THz) is emitted into the wave front phase control device through the transmission dielectric layer 6; when the super-structure surface electrode 2 is connected with an external voltage, the direction of the voltage applied to the liquid crystal 1 is orthogonal to the transmission direction of the terahertz electromagnetic wave beam 7. The liquid crystal 1 (in the figure, the liquid crystal 1 and the super-structure surface electrode 2 are in contact with each other, or not in contact with each other) can flexibly select various liquid crystal materials which are transparent to the terahertz electromagnetic wave beam 7 and have a birefringence effect, such as 5CB and E7 or liquid crystal doped with organic macromolecules, and the liquid crystal 1 and the super-structure surface electrode 2 are equal in thickness. The super-structure surface electrode 2 has the functions of conducting electricity and generating electromagnetic resonance, and is a wire grid array composed of a plurality of independent grid electrodes as shown in fig. 2, and the distance between two adjacent grid electrodes is flexibly selected according to an application waveband (namely a terahertz waveband), and is generally 1-50 micrometers. The period of the wire grid array is on a sub-wavelength scale, typically in the range of one tenth of a wavelength to one wavelength scale. Since the gates are independent of each other, different voltages can be applied to each gate. The super-structure surface electrode 2 can be a single layer made of a material which is transparent (low loss) to the application wave band and can conduct electricity, such as doped silicon, and the doping concentration is flexibly selected according to the application wave band; a composite layer of the conductive layer 21 and the single layer 22 may be used, as shown in fig. 3. Because the doping concentration of the doped silicon transparent to terahertz waves is possibly low, the conductive effect is poor, and the conductive performance can be effectively improved by adopting the composite layer. When the super-structure surface electrode 2 adopts a single-layer scheme, the thickness is in a sub-wavelength scale, generally in a range from one tenth of one wavelength of an application waveband to one wavelength scale; with the composite layer approach, the thickness of the conductive layer 21 is about 10 nm to 1 μm, and the thickness of the single layer 22 is in the sub-wavelength scale, typically in the range of one tenth of one wavelength to one wavelength scale of the application band. The dielectric isolation layer 3 is used for keeping the insulation between the super-structure surface structure layer and the reflector 4, and various dielectric materials which are transparent to the application waveband can be flexibly selected, such as silicon dioxide, aluminum oxide and the like, and the thickness range of the dielectric isolation layer can be 5 nanometers to one half of the wavelength of the application waveband. The reflecting mirrors 4 may be respectively composed of various mirror surfaces with high reflectivity (the high reflectivity represents that the normal incidence reflectivity is greater than 50%), such as Distributed Bragg reflectors (Distributed Bragg reflectors), metal mirrors or Phonon polarization (Phonon polarization) reflecting layers, and the like, for reflecting terahertz waves. The substrate 5 and the transmission medium layer 6 can be made of common transparent dielectric materials such as silicon dioxide, silicon and the like; wherein the substrate 5 is used to provide physical support and electrical isolation for all structural layers thereon; the transmission medium layer 6 is used for packaging the super-structure surface structure layer and transmitting a terahertz electromagnetic wave beam 7 with a set frequency in an incident p-polarization direction.
In addition, the wire grid array shown in fig. 2 is replaced by a wire grid array through structural evolution, in which the spaced gates are connected in series with each other to form interdigital array electrodes, as shown in fig. 4.
To further illustrate the working principle of the device, two specific implementation examples are provided. The first embodiment is a phase modulator, and the second embodiment is a phased array.
In one embodiment, the operating frequency of the phase modulator is 0.5 THz. As shown in FIG. 3, the liquid crystal material selected for the liquid crystal 1 is E7, and when the applied voltage is 0-15V, the refractive index change in the terahertz waveband is about 1.55-1.7. The reflector 4 is made of gold and has a thickness of 100 nm. Alumina was selected as the material constituting the dielectric isolation layer 3, with a thickness of 200 nm. The super-structure surface electrode 2 selects silicon and gold as a composite layer of constituent materials, the gold thickness of the conductive layer 21 is 100 nanometers, the silicon doping concentration in the single layer 22 which is transparent to the applied wave band and can be formed by the conductive material is 1.4 multiplied by 1014The monolayer 22 is 130 microns thick per cubic centimeter. The wire grid type super-structured surface electrode 2 uses an interdigital array electrode as shown in fig. 4, the period d of the array electrode is designed to be 305 micrometers according to a set frequency (0.5THz), and the interdigital distance is 20 micrometers. Because the distance between the adjacent interdigital electrodes is 20 micrometers, compared with the traditional mode of arranging the electrodes along the electromagnetic wave propagation direction, the distance between the electrodes arranged on the two sides of the liquid crystal is effectively reduced. The substrate 5 and the transmission medium layer 6 for packaging are made of silicon dioxide, and the thickness of the silicon dioxide is 500 micrometers. The frequency of the incident p-polarized terahertz electromagnetic beam 7 is selected to be 0.5THz. As shown in fig. 5 (in order to more clearly show the orientation of the liquid crystal molecules in the liquid crystal 1, the gate widths of the liquid crystal 1 and the super-structured surface electrode 2 in fig. 5 and 6 are not drawn to scale and are only schematic diagrams), when no external voltage is applied, the orientation of the liquid crystal molecules in the liquid crystal 1 is influenced by the direction of the interdigital array structure, pointing to the interdigital extension direction, and the refractive index of the liquid crystal 1 for the incident terahertz electromagnetic beam 7 in the p-polarization direction is 1.55. When an external voltage is applied, as shown in fig. 6, the liquid crystal molecular orientation in the liquid crystal 1 is driven by the voltage difference between the adjacent gates of the interdigital, and the refractive index of the liquid crystal 1 in the direction tending to be perpendicular to the interdigital to the incident terahertz electromagnetic beam 7 in the p-polarization direction gradually increases from 1.55 to 1.7 with increasing voltage. In this process, the phase of the reflected beam of the terahertz electromagnetic beam 7 with the frequency of 0.5THz changes after passing through the phase modulator, and the phase change can reach 324 ° as shown in fig. 7. During this phase modulation change, the terahertz beam reflection efficiency at this frequency can be maintained above 90%, as shown in fig. 8.
In the second embodiment, the operating frequency of the phased array is 0.5 THz. The basic structure is shown in fig. 2 and 3. The structure and the voltage applying manner of the wire grid type super-structured surface electrode 2 are as shown in fig. 9, the gates are independent of each other, the voltage difference between the adjacent gates can be independently controlled, and other configurations are consistent with the configuration of the phase modulator in the first embodiment. As shown in fig. 10, since the voltage difference between adjacent gates can be independently controlled, with the device of the present embodiment, the reflected terahertz beam 8 formed by the incident terahertz electromagnetic beam 7 with the p-polarization direction set frequency after being reflected by the device can have the same gradient phase difference between each pair of gates
Figure BDA0002381445700000052
So that the wave beams reflected by the adjacent grids generate wave path difference on the equiphase surface
Figure BDA0002381445700000051
λ is one wavelength of the terahertz band. The following geometrical relationship exists between the gate period d and the wave path difference Δ R: Δ R ═ d · sin θ, indicating terahertz waves reflected via the deviceA deflection of the angle theta occurs. Therefore, through external voltage control, the device can realize the wave front phase modulation of the terahertz wave band and realize the deflection of a set angle on normal incidence terahertz waves.
The preparation method of the phase modulator in the first embodiment and the second embodiment of the present invention can be referred to as follows:
step 1, evaporating 200 nm of aluminum oxide (a dielectric isolation layer 3) on a 500 micron silicon wafer (silicon material related in a composite layer of a super-structure surface electrode 2) and evaporating about 50 nm of gold (which is one-half layer thick of a reflector 4).
And 2, evaporating a gold layer of about 50 nanometers (the thickness of a reflector is one-half of that of a reflector 4) on a quartz plate (a substrate 5) with the thickness of 500 micrometers.
And 3, carrying out gold bonding on the samples obtained in the steps 1 and 2 to form a reflector 4.
And 4, thinning and polishing the silicon wafer part in the sample formed in the step 3 to 130 micrometers to be used as the single layer 22 in the super-structure surface electrode 2.
And 5, evaporating a 100-nanometer gold film on the sample formed in the step 4 to form a conductive layer 21 in the super-structure surface electrode 2.
And 6, carrying out structured etching by utilizing a photoetching technology and an etching technology to form the super-structure surface electrode 2.
And 7, pouring liquid crystal 1 between the grids of the super-structure surface electrode 2 obtained in the step 6 and packaging by using a quartz plate (transmission medium layer 6).
In conclusion, the invention adopts the liquid crystal and the super-structure surface electrode structure which are arranged in a wire grid shape; a voltage applying mode which is orthogonal to the transmission direction of incident electromagnetic waves is adopted for liquid crystal; furthermore, the external voltage of each grid electrode can be independently controlled, and the device can realize different functions through different external voltage application modes; in addition, the structural design of the application example of the present invention is directed to terahertz waves, but can be applied to microwave, near infrared and visible light bands as well.
The present invention and its embodiments have been described above schematically, without limitation, and what is shown in the drawings is only one of the embodiments of the present invention and is not actually limited thereto. Therefore, if the person skilled in the art receives the teaching, it is within the scope of the present invention to design the similar manner and embodiments without departing from the spirit of the invention.

Claims (8)

1.一种基于液晶和线栅形超构表面的太赫兹波前相位控制装置,其特征在于,包括由下至上依次层叠的衬底、反射镜、电介质隔离层、由在线栅形超构表面电极中相邻栅极间灌注液晶形成的超构表面结构层、以及透射介质层,p偏振方向设定频率的太赫兹电磁波束由所述透射介质层射入;当所述超构表面电极接入外加电压时,对所述液晶施加的电压方向与太赫兹电磁波束的传输方向正交。1. a terahertz wavefront phase control device based on liquid crystal and wire grid metasurface, it is characterized in that, comprise the substrate, reflecting mirror, dielectric isolation layer stacked successively from bottom to top, by the wire grid metasurface. A metasurface structure layer formed by perfusion of liquid crystals between adjacent gates in the electrodes, and a transmission medium layer, the terahertz electromagnetic beam with a frequency set in the p-polarization direction is injected from the transmission medium layer; when the metasurface electrode is connected to When an applied voltage is applied, the direction of the voltage applied to the liquid crystal is orthogonal to the transmission direction of the terahertz electromagnetic beam. 2.根据权利要求1所述的太赫兹波前相位控制装置,其特征在于,所述超构表面电极中的间隔栅极彼此串联,形成叉指阵列电极,各间隔栅极均接入相同的外加电压。2 . The terahertz wavefront phase control device according to claim 1 , wherein the spaced gates in the metasurface electrodes are connected in series with each other to form an interdigital array electrode, and each spaced gate is connected to the same applied voltage. 3.根据权利要求1所述的太赫兹波前相位控制装置,其特征在于,所述超构表面电极中的各栅极彼此独立,用于分别控制接入各栅极的外加电压。3 . The terahertz wavefront phase control device according to claim 1 , wherein each grid in the metasurface electrode is independent of each other, and is used to separately control the applied voltage connected to each grid. 4 . 4.根据权利要求1所述的太赫兹波前相位控制装置,其特征在于,所述超构表面电极的周期为亚波长尺度,相邻两栅极的间距为1~50微米;4 . The terahertz wavefront phase control device according to claim 1 , wherein the period of the metasurface electrode is a sub-wavelength scale, and the distance between two adjacent grids is 1-50 μm; 5 . 所述超构表面电极中各栅极均分别为由对太赫兹电磁波束透明且导电的材料构成的单层,或者,均分别为由导电层和所述单层构成的复合层;所述单层的厚度为亚波长尺度,所述导电层的厚度为10纳米~1微米。Each grid in the metasurface electrode is respectively a single layer composed of a material that is transparent and conductive to the terahertz electromagnetic beam, or, each is a composite layer composed of a conductive layer and the single layer; The thickness of the layer is on a sub-wavelength scale, and the thickness of the conductive layer is 10 nanometers to 1 micrometer. 5.根据权利要求1所述的太赫兹波前相位控制装置,其特征在于,所述液晶与所述超构表面电极等厚,且选用对所述太赫兹电磁波束透明且具有双折射效应的液晶材料,包括5CB、E7和掺杂有机大分子的液晶材料。5 . The terahertz wavefront phase control device according to claim 1 , wherein the liquid crystal and the metasurface electrode are of equal thickness, and a terahertz electromagnetic beam that is transparent to the terahertz electromagnetic beam and has a birefringence effect is selected. 6 . Liquid crystal materials, including 5CB, E7 and liquid crystal materials doped with organic macromolecules. 6.根据权利要求1所述的太赫兹波前相位控制装置,其特征在于,所述电介质隔离层选取对所述太赫兹电磁波束透明的电介质材料,厚度为5纳米~太赫兹波段波长的二分之一。6 . The terahertz wavefront phase control device according to claim 1 , wherein the dielectric isolation layer is selected from a dielectric material that is transparent to the terahertz electromagnetic beam, and has a thickness of 5 nanometers to two wavelengths in the terahertz band. 7 . one part. 7.根据权利要求1所述的太赫兹波前相位控制装置,其特征在于,所述反射镜由正入射反射率大于50%的镜面组成,包括分布式布拉格反射镜、金属反射镜或声子激元反射层。7 . The terahertz wavefront phase control device according to claim 1 , wherein the mirror is composed of mirror surfaces with normal incidence reflectivity greater than 50%, including distributed Bragg mirrors, metal mirrors or phonons. 8 . Polar reflector layer. 8.根据权利要求1所述的太赫兹波前相位控制装置,其特征在于,所述太赫兹电磁波束的设定频率为0.1THz~5THz。8 . The terahertz wavefront phase control device according to claim 1 , wherein the set frequency of the terahertz electromagnetic beam is 0.1THz˜5THz. 9 .
CN202010084176.5A 2020-02-10 2020-02-10 Terahertz wavefront phase control device based on liquid crystal and wire grid metasurface Active CN111273467B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010084176.5A CN111273467B (en) 2020-02-10 2020-02-10 Terahertz wavefront phase control device based on liquid crystal and wire grid metasurface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010084176.5A CN111273467B (en) 2020-02-10 2020-02-10 Terahertz wavefront phase control device based on liquid crystal and wire grid metasurface

Publications (2)

Publication Number Publication Date
CN111273467A CN111273467A (en) 2020-06-12
CN111273467B true CN111273467B (en) 2021-07-16

Family

ID=70999296

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010084176.5A Active CN111273467B (en) 2020-02-10 2020-02-10 Terahertz wavefront phase control device based on liquid crystal and wire grid metasurface

Country Status (1)

Country Link
CN (1) CN111273467B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112003021A (en) * 2020-08-14 2020-11-27 上海交通大学 Method and system for expanding liquid crystal tuning range by utilizing metamaterial characteristics
CN114609803B (en) * 2020-12-04 2024-07-19 清华大学 Dynamic super-structured surface based on liquid crystal material
CN112952392B (en) * 2021-01-26 2022-12-20 东南大学 Terahertz digital programmable super surface for liquid crystal regulation and control
CN113394647B (en) * 2021-06-25 2022-03-18 重庆邮电大学 A terahertz wave phase control system based on line bias position
CN117215105A (en) * 2022-06-02 2023-12-12 华为技术有限公司 Liquid crystal device, optical modulation device and system
CN115167026B (en) * 2022-08-04 2023-07-14 兰州大学 A tunable multi-mode dual-frequency high-efficiency reflective polarization conversion device
CN115513653B (en) * 2022-10-24 2023-05-12 北京星英联微波科技有限责任公司 Two-dimensional electrically tunable material-based encodable four-beam antenna, super-surface module and composite antenna structure

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103105686A (en) * 2011-11-09 2013-05-15 南开大学 Reflection type terahertz tunable polarization controller
CN103176315A (en) * 2011-12-20 2013-06-26 群康科技(深圳)有限公司 Display device and electronic device
CN106019648A (en) * 2016-05-27 2016-10-12 哈尔滨理工大学 Filter of tunable terahertz metamaterial and preparation method thereof based on low-voltage-driven liquid crystal material
CN106873051A (en) * 2015-12-09 2017-06-20 三星电子株式会社 The method of super device and guiding light
CN107092147A (en) * 2017-05-27 2017-08-25 南京邮电大学 A kind of reflective automatically controlled adjustable Terahertz liquid crystal wave plate and preparation method thereof
US9835924B1 (en) * 2016-10-11 2017-12-05 National Sun Yat-Sen University Silicon based terahertz full wave liquid crystal phase shifter
CN107942538A (en) * 2017-11-13 2018-04-20 中国计量大学 Automatically controlled THz wave amplitude controller
CN108957876A (en) * 2018-09-19 2018-12-07 苏州晶萃光学科技有限公司 A kind of adjustable Terahertz wavefront modulator and preparation method thereof
CN109037951A (en) * 2018-07-12 2018-12-18 清华大学 Microwave and millimeter wave and Terahertz spatial electromagnetic wave phase converter
CN109143618A (en) * 2018-10-17 2019-01-04 长江师范学院 A kind of Terahertz modulator
CN109193162A (en) * 2018-09-20 2019-01-11 合肥工业大学 A kind of quick regulation method of the reflective phase-shifting unit of Terahertz and its internal liquid crystal
CN109298555A (en) * 2018-10-25 2019-02-01 南开大学 Terahertz magnetic nano-liquid crystal phase shifter and preparation method thereof
CN109814283A (en) * 2019-03-27 2019-05-28 电子科技大学 Low-voltage-driven normally-on terahertz metasurface modulator and preparation method
CN110187522A (en) * 2019-05-24 2019-08-30 中国计量大学上虞高等研究院有限公司 Silicon substrate Bi2O2Se structure Terahertz wave switch
CN110221447A (en) * 2019-05-22 2019-09-10 清华大学 A kind of structured light projection diffraction optical device based on super structure surface
CN110534909A (en) * 2019-09-04 2019-12-03 哈尔滨理工大学 A kind of even Terahertz Meta Materials converter and preparation method thereof that can be switched with galvanic couple of the ring based on the reconstruct of MEMS planar structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9298050B2 (en) * 2011-08-31 2016-03-29 The Hong Kong University Of Science And Technology Terahertz in-plane and terahertz out-of-plane switching liquid crystal devices
JP6350563B2 (en) * 2016-02-29 2018-07-04 住友大阪セメント株式会社 Optical modulator and optical transmitter using the optical modulator
CN109407420B (en) * 2018-10-24 2021-08-31 上海无线电设备研究所 Terahertz blue-phase liquid crystal grating and manufacturing method thereof
CN110676673A (en) * 2019-11-11 2020-01-10 杭州电子科技大学富阳电子信息研究院有限公司 Terahertz radiation source device based on multi-finger gate structure and regulation and control method thereof

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103105686A (en) * 2011-11-09 2013-05-15 南开大学 Reflection type terahertz tunable polarization controller
CN103176315A (en) * 2011-12-20 2013-06-26 群康科技(深圳)有限公司 Display device and electronic device
CN106873051A (en) * 2015-12-09 2017-06-20 三星电子株式会社 The method of super device and guiding light
CN106019648A (en) * 2016-05-27 2016-10-12 哈尔滨理工大学 Filter of tunable terahertz metamaterial and preparation method thereof based on low-voltage-driven liquid crystal material
US9835924B1 (en) * 2016-10-11 2017-12-05 National Sun Yat-Sen University Silicon based terahertz full wave liquid crystal phase shifter
CN107092147A (en) * 2017-05-27 2017-08-25 南京邮电大学 A kind of reflective automatically controlled adjustable Terahertz liquid crystal wave plate and preparation method thereof
CN107942538A (en) * 2017-11-13 2018-04-20 中国计量大学 Automatically controlled THz wave amplitude controller
CN109037951A (en) * 2018-07-12 2018-12-18 清华大学 Microwave and millimeter wave and Terahertz spatial electromagnetic wave phase converter
CN108957876A (en) * 2018-09-19 2018-12-07 苏州晶萃光学科技有限公司 A kind of adjustable Terahertz wavefront modulator and preparation method thereof
CN109193162A (en) * 2018-09-20 2019-01-11 合肥工业大学 A kind of quick regulation method of the reflective phase-shifting unit of Terahertz and its internal liquid crystal
CN109143618A (en) * 2018-10-17 2019-01-04 长江师范学院 A kind of Terahertz modulator
CN109298555A (en) * 2018-10-25 2019-02-01 南开大学 Terahertz magnetic nano-liquid crystal phase shifter and preparation method thereof
CN109814283A (en) * 2019-03-27 2019-05-28 电子科技大学 Low-voltage-driven normally-on terahertz metasurface modulator and preparation method
CN110221447A (en) * 2019-05-22 2019-09-10 清华大学 A kind of structured light projection diffraction optical device based on super structure surface
CN110187522A (en) * 2019-05-24 2019-08-30 中国计量大学上虞高等研究院有限公司 Silicon substrate Bi2O2Se structure Terahertz wave switch
CN110534909A (en) * 2019-09-04 2019-12-03 哈尔滨理工大学 A kind of even Terahertz Meta Materials converter and preparation method thereof that can be switched with galvanic couple of the ring based on the reconstruct of MEMS planar structure

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Yuan Meng.Ultracompact Graphene-Assisted Tunable Waveguide Couplers with High Directivity and Mode Selectivity.《Scientific Reports》.2018,1-11. *
Yuanmu Yang.High-harmonic generation from an epsilon-near-zero material.《Nature physics》.2019,1022-1027. *
Yun-Yun Ji.Terahertz dielectric anisotropy enhancement in dual-frequency liquid crystal induced by carbon nanotubes.《Carbon》.2019,865-872. *

Also Published As

Publication number Publication date
CN111273467A (en) 2020-06-12

Similar Documents

Publication Publication Date Title
CN111273467B (en) Terahertz wavefront phase control device based on liquid crystal and wire grid metasurface
Fu et al. Flexible terahertz beam manipulations based on liquid-crystal-integrated programmable metasurfaces
Biswas et al. Tunable graphene metasurface reflectarray for cloaking, illusion, and focusing
US10915002B2 (en) Optical beam-steering devices and methods utilizing surface scattering metasurfaces
CN108957876B (en) Adjustable terahertz wave front modulator and preparation method thereof
CN111610670B (en) Terahertz spatial light modulator, preparation method and application
CN110275327B (en) Chirality-dependent surface plasmon wavefront regulator under circularly polarized light incidence
CN114911084B (en) Terahertz liquid crystal circularly polarized wave beam scanning device
CN106707559B (en) Function element based on graphene two dimension Meta Materials
CN109407420B (en) Terahertz blue-phase liquid crystal grating and manufacturing method thereof
CN114326226B (en) An electrically addressable metasurface for terahertz wavefront modulation
CN113381277A (en) Circular polarization laser of chiral metamaterial
US12135405B2 (en) Electrically-controlled dynamic optical component comprising a planar metasurface
US20240045272A1 (en) Electromagnetic wave control apparatus
CN114755847B (en) A VO2-based switchable terahertz beam control device and its preparation method
CN117317611A (en) Vanadium dioxide-based dual-function switchable terahertz device
CN113422196A (en) Terahertz heat radiation source capable of generating ultra-narrow bandwidth and working method thereof
WO2022088203A1 (en) Tunable terahertz signal deflector and preparation method therefor
Antonov Acousto-optic deflector based on a paratellurite crystal using broadband acoustic adhesive contact
CN113325651B (en) Liquid crystal optical phased array thermal lens effect compensation device, system and method
CN108631065B (en) Double-absorption-peak adjustable metamaterial wave absorber based on liquid crystal
Wang et al. Tunable graphene-based metasurface for an ultra-low sidelobe terahertz phased array antenna
WO2023231859A1 (en) Liquid crystal device, and optical modulation device and system
CN114609803B (en) Dynamic super-structured surface based on liquid crystal material
Jalal et al. Polarization insensitive switchable terahertz metamaterial device in the reflection mode

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant