CN109814283A - The super surface modulation device of the open type Terahertz of low voltage drive and preparation method - Google Patents
The super surface modulation device of the open type Terahertz of low voltage drive and preparation method Download PDFInfo
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Abstract
The present invention provides the super surface modulation device of open type Terahertz and preparation method of a kind of low voltage drive, it is successively vanadium dioxide film, super superficial layer micro-structure on the upside of HR-Si substrate surface including HR-Si substrate, buried gate electrode, vanadium dioxide film and super superficial layer micro-structure；Vanadium dioxide film includes square vanadium dioxide film block and isolation vanadium dioxide film, super superficial layer micro-structure is made of several metal structure unit periodic arrangements, each metal structure unit is a square-shaped metal block, a H-type groove is equipped in the middle part of each square-shaped metal block, a square vanadium dioxide film block is equipped with below traversing section among H-type groove, the bottom of each square-shaped metal block is connected by metal strip, and is finally connected with drain electrode.This device can be widely applied to the fields such as THz wave communication system, THz wave detection, THz wave imaging.
Description
Technical field
The invention belongs to THz wave applied technical field, the super table of open type Terahertz of specially a kind of low voltage drive
Face modulator and preparation method thereof.
Background technique
Terahertz waves between microwave and it is infrared between, special frequency range makes THz wave have some distinctive property
Matter has huge application prospect in fields such as wireless communication, spectroscopy, non-destructive testing and imagings, to receive increasingly
More concerns.And the realization of these potential applications requires various main Passive components more effectively to control Terahertz
Wave: modulator, filter, polarizer, phase shifter, switch and lens etc..However most of natural material is electromagnetically
It can be not appropriate for the frequency range of Terahertz, therefore the development of Terahertz component falls behind relatively, the appearance of artificial electromagnetic material
This problem of very good solution, wherein super surface is easy to be even more to receive the welcome of numerous researchers since structure simply manufactures
Super surface is a kind of artificial synthesized submicrometer structure, these engineer's units are by changing super surface texture list
Geometry, size, direction or the dielectric substance of member, can provide chance for various Terahertz applications.Largely
Researcher by with tunability material and semiconductor material be combined together and constitute adjustable super surface device, electric field, light,
The dynamic regulation to THz wave is realized under the dynamic excitations such as temperature.
Vanadium dioxide is a kind of fabulous adjustable function material, and lattice structure can be sent out under the outer field excitation such as heat, electricity, light
The reversible transition (MIT) by monocline rutile structure (M phase) to cubic rutile structure (R phase) is given birth to, while with electricity and light
The acute variation for learning performance, wherein more apparent physical phenomenon is that have the conductivity variations of the 3-5 order of magnitude.When M phase, dioxy
Changing vanadium has very high transmitance to THz wave, absorbs and reflection loss is also very small, and when R phase, vanadium dioxide is to Terahertz
Wave has very strong reflection and absorption, and transmitance is relatively small.It is combined using the phase transformation of vanadium dioxide film with super surface texture,
The amplitude-phase regulation to THz wave may be implemented.However, using traditional light and heat driving method, need additional heat and
Optical devices can not be integrated with the microelectronics system of current mainstream.
Therefore, developing one kind can be mutually compatible with semiconductor technology and existing high integration electronic system, and by outer
Boundary's excitation is realized to very urgent.The realization of this device is not only significant to the development of super surface texture, for pushing
The development of the real application systems such as existing terahertz imaging system also has important value.
Summary of the invention
The purpose of the present invention is to provide a kind of super surface modulation device of the open type Terahertz of low voltage drive and its preparations
Method.
For achieving the above object, technical solution of the present invention is as follows:
A kind of super surface modulation device of the open type Terahertz of low voltage drive, including HR-Si substrate 1, buried gate electrode 2, two
Vanadium oxide film and super superficial layer micro-structure 4, buried gate electrode 2 are to carry out constituency to HR-Si substrate 1 using diffusion technique to mix
Miscellaneous preparation and be formed in inside HR-Si substrate 1, be successively vanadium dioxide film, super superficial layer on the upside of 1 surface of HR-Si substrate
Micro-structure 4；Vanadium dioxide film includes that square vanadium dioxide film block 3 and isolation vanadium dioxide film 31, super superficial layer are micro-
Structure 4 is made of several metal structure unit periodic arrangements, and each metal structure unit is a square-shaped metal block 8,
It is equipped with a H-type groove 7 in the middle part of each square-shaped metal block, a square titanium dioxide is equipped with below the traversing section among H-type groove
Vanadium film block 3, traversing section and square vanadium dioxide film block 3 among H-type groove contact, and each square-shaped metal block and bury grid
The contact position of electrode is isolated by isolation vanadium dioxide film 31, and the bottom of each square-shaped metal block is connected by metal strip 6,
And finally it is connected with drain electrode.Buried gate electrode 2, vanadium dioxide film and super superficial layer micro-structure 4 play THz wave amplitude,
The effect of phase dynamic regulation.
It is preferred that oxide is added between HR-Si substrate 1 and vanadium dioxide film as insulating layer.In this way
Slow down the propagation that electric current generates Joule heat, promotes vanadium dioxide film performance, increase the flexibility of device design, reduce device
Prepare difficulty.
It is preferred that the buried gate electrode 2, vanadium dioxide film and super superficial layer micro-structure 4 in entire device are equal
It is to be process by same HR-Si substrate 1 by the standard semi-conductor processes of etching, doping, oxidation, photoetching.
It is preferred that the HR-Si substrate 1 is intrinsic or high-resistance semi-conductor Si material, resistivity >=1000
Ωμm·cm.Reduce the loss of THz wave.
It is preferred that the buried gate electrode 2 is formed by adulterating to the progress of HR-Si substrate 1 constituency, lead
Electric energy power power is adjusted by control doping concentration, and the minimum widith of buried gate electrode 2 is between 3 μm -5 μm.
It is preferred that the vanadium dioxide film is with a thickness of 20nm-80nm, sheet resistance >=2000 when the phase that insulate
Ω/, sheet resistance≤20 Ω/ when metal phase.The voltage of the work of driving element needed for vanadium dioxide film thickness is thinner
With regard to smaller.
It is preferred that vanadium dioxide film cutting technique is covered with photoresist using standard dry etching technics
Film, dry etching fall extra part.Due to VO2Film is very thin, therefore etch period is very short, guarantees that vanadium dioxide film will not
Penalty occurs because of heating process.
It is preferred that the super superficial layer micro-structure 4 is that gold thin film is coated with using magnetron sputtering technique to constitute, gold
The thickness of film is not less than 100nm.The continuity of device architecture after adhesion and preparation to guarantee gold thin film.
It is preferred that the oxide between HR-Si substrate 1 and vanadium dioxide film is SiO2Or Al2O3Or oxygen
Change hafnium.
Transmission amplitude can be with consecutive variations, in 400GHz-488GHz device under the action of voltage within the scope of 0.2-0.6THz
Part modulation depth reaches 80% or more, and modulation depth is up to 95% at 0.45THz.
For achieving the above object, the present invention also provides a kind of super surfaces of open type Terahertz of above-mentioned low voltage drive
The preparation method of modulator, including the following steps:
Step 1, using electromagnetic simulation software CST Microwave Studio, establish the super surface micro-structure unit 3D of silicon substrate
Model after setting boundary condition and solver, optimizes unit period p in micro-structure, the side length a of gold thin film Fang Huan, square loop wire
Wide w and vanadium dioxide film side length g, buries the wide wl of grid line, to obtain maximum transmission rate variance；
Step 2, cleaning semiconductor silicon substrate: silicon chip is put into first in the beaker for fill acetone and is cleaned by ultrasonic, then
Alcohol ultrasonic cleaning is reused, is finally cleaned by ultrasonic using deionized water, the silicon chip after cleaning is again with being dried with nitrogen, in baking oven
It is dry；
Step 3 prepares buried gate electrode: after designing according to designed microstructure size and process mask plate, first silicon
Substrate is put into thermal oxidation furnace, grows silicon dioxide mask layer using dry-oxygen oxidation method, is made over the barrier layer using photoetching technique
The figure of grid is buried, then dry etching barrier layer forms the doping groove of silicon electrode, electrode line is respectively 3.8 μm and 19.0 μ
m；Phosphorus is reused as thermal diffusion source；In prediffusion, whole process is passed through 1L/min nitrogen stream and is used as protection gas, will be in furnace with 50min
Temperature is increased to 850 DEG C, and is sent into substrate at this temperature；15min rises to 1000 DEG C, in 1000 DEG C of holding 40min, then exists
It is cooled to 850 DEG C in 30min, takes out substrate, finally gets rid of remaining silicon dioxide blocking layer and pre-expansion using BOE water bath Method
The phosphorosilicate glass generated during dissipating；It is spread again later, it will be in furnace with the time of 50min under the protection of 1L/min nitrogen stream
Temperature rise to 850 DEG C, and be sent into substrate at this temperature；Continue to heat up, changes logical oxygen, flow 1L/min, 15min at this time
After rise to 1000 DEG C, keep 30min；Then start to cool down, so that in-furnace temperature is dropped to 850 under 1L/min nitrogen stream in 30min
DEG C, take out substrate；It is 5 Ω/ that the buried gate electrode being prepared, which measures electrode sheet resistance,；
Step 4 prepares vanadium dioxide film: being penetrated using radio frequency magnetron sputtering method using high purity vanadium metal as target
Frequency power 180w-220w, operating air pressure 1Pa, oxygen argon flow-rate ratio 4%-6%, under conditions of 550 DEG C of heating temperature, in High Resistivity Si
The vanadium dioxide film of on piece deposition 80nm；
Step 5, cutting vanadium dioxide film: required for being made on coated vanadium dioxide film using photoetching technique
Block pattern, exposure mask is done with photoresist, using dry carving technology be not photo-etched glue blocking partial etching fall, recycle third
The method that ketone impregnates removes photoresist；
Step 6, preparation gold thin film layer: the figure of needs is made on the vanadium dioxide film etched using photoetching technique
Shape recycles magnetically controlled sputter method in the gold nanometer film of High Resistivity Si on piece deposition 100-200nm；
Step 7 is tested using Terahertz transmission performance of the terahertz time-domain spectroscopy system THz-TDS to device, too
Hertz wave is provided by the incidence of super superficial layer micro-structure side, device institute making alive by constant pressure source, and positive and negative anodes are connected respectively to Jenner
The both ends of rice film and buried gate electrode, apply 0-13V voltage, record THz-TDS system data at once.
At the slit of buried gate electrode in the device, super superficial layer and vanadium dioxide film, meeting under the action of THz wave
Certain charge is accumulated, when the vanadium dioxide of insulation phase is regarded as dielectric, this vertical structure can be equivalent to one
A capacitor.And the gold thin film and buried gate electrode of the super superficial layer of composition all have electric conductivity, itself has certain resistance and inductance,
A LC resonance circuit is constituted together with above-mentioned capacitor, generates resonance.When vanadium dioxide film is undergone phase transition, become metal phase
When, conductive capability enhancing, charge can flow freely wherein, therefore can be seen as upper layer gold thin film and buried gate electrode
The conducting wire being connected, the charge that THz wave effect generates accumulate no longer at slit, and the capacitor at slit disappears.And adjacent list
Again because the charge for having gathered opposite polarity forms the capacitor between a kind of unit on gold thin film box between member, generate another humorous
Vibration.Therefore the transition of vanadium dioxide film is controlled by applying alive size, so that it may control the humorous of super surface device
Vibration state, to have the function that regulate and control THz wave.Core of the invention is to do substrate using high resistant silicon materials, utilizes photoetching
Buried gate electrode is made after handling with ICP lithographic technique silicon substrate, is different from traditional metal electrodes, guarantees VO2Film
Growth quality and phase transition performance；Then vanadium dioxide film is prepared on buried gate electrode and using semiconductor process technique to dioxy
Change vanadium film to be patterned；Finally gold thin film layer is made in structure top layer.The super surface device is transmission normally on device, is used
To solve the problems, such as that existing microelectronics system is mutually compatible with, guaranteeing can be with installation and debugging and detection, together under the quiescent conditions without electricity
When SiO can also be added2Or Al2O3Buffer layer suppression device leads to the problem of Joule heat, promotes vanadium dioxide film performance, increases
The flexibility of device design and the preparation difficulty for reducing device.The present invention is accomplished that the device in Terahertz frequency range
Transmission amplitude can generate consecutive variations under the action of voltage, this has important meaning to the super surface development of future studies Terahertz dynamic
Justice: we can control the resonant state of any one structural unit by method appropriate, to realize expection that we want
Effect.
From working principle:
A kind of super surface modulation device of the open type Terahertz of low voltage drive proposed by the present invention, is constructed using buried gate electrode
Vertical capacitor structure, this novel structure, which can pass through to apply external drive and change the conductivity of vanadium dioxide film, to be realized pair
THz wave transmits the quick dynamic regulation of amplitude.In structure of the invention, it is because it is easy that substrate material, which selects high resistant silicon materials,
It obtains, low in cost, the features such as possessing mature processing technology.Regulation device of the invention is using buried gate electrode on-load voltage
In order to be compatible with microelectronics system technique, it is different from traditional metal electrodes and improves common resonator device architecture, reduce common metal
The loss of THz wave caused by electrode；Electric field controls are generated after device electrode load certain voltage, and vanadium dioxide film is from exhausted
Edge mutually becomes metal phase, and device resonant capacitance is changing between adjacent cells by the vertical capacitor of gold thin film and buried gate electrode slit
Capacitor, LC concussion structure and LC value change, thus realize regulation THz wave effect.
In conclusion advantages of the present invention and effect have:
The present invention provides the design theories and preparation of a kind of super surface modulation device of the open type Terahertz of low voltage drive
Scheme, theoretical foundation are transmission line theory and LC resonance principle.High resistant silicon materials are chosen in the present invention as substrate, are because of it
Easy acquisition, at low cost and technology are mature；And the vanadium dioxide film preparation skill of regulating and controlling effect is played in the devices
Also more mature and vanadium dioxide voltage driving phase transformation is vertically to press to art, VO2Thickness only has 20~40nm, therefore driving voltage
It is minimum only to need 1~2V；The graphical VO that the metal openings position of device is placed2Film rather than semiconductor material or other devices
Part has high-insulativity, guarantees the strong transmissivity of super surface texture, so that insertion loss is extremely low (1.8dB), modulation amplitude is up to
95%, extinction coefficient reaches 26dB.In addition this device substantially increases the flexibility to THz wave regulation, has biggish
Bandwidth of operation；Such as SiO is introduced between vanadium dioxide film and buried gate electrode2Or Al2O3Oxide insulating layer can effectively inhibit
Joule heat caused by electric current promotes vanadium dioxide film performance, improves device performance of control and rate；And it is this control it is additional
The mode of electric excitation may be implemented device and switch in two kinds of biggish resonant states of differences in transmission, to entire super surface device
The realization that any one unit controls in part has some reference value.This device can be widely applied to THz wave communication system,
The fields such as THz wave detection, THz wave imaging.
Detailed description of the invention
Fig. 1 is a kind of schematic three dimensional views of the super surface modulation device structure of the open type Terahertz of low voltage drive of the present invention.
Fig. 2 is a kind of unit size signal of super surface modulation device structure of the open type Terahertz of low voltage drive of the present invention
Figure.
Fig. 3 (a) is a kind of VO of the super surface modulation device different resistance values of the open type Terahertz of low voltage drive of the present invention2
The corresponding transmission amplitude analogous diagram of film.
Fig. 3 (b) is a kind of super surface modulation device modulation depth analogous diagram of the open type Terahertz of low voltage drive of the present invention.
Fig. 3 (c) is a kind of simulated electric field distribution of super surface modulation device of the open type Terahertz of low voltage drive of the present invention
Scheme (vanadium dioxide film is before phase change).
Fig. 3 (d) is a kind of simulated electric field distribution of super surface modulation device of the open type Terahertz of low voltage drive of the present invention
Scheme (after vanadium dioxide film phase transformation).
Fig. 4 (a) is the image that the device of present invention experiment production amplifies 200 times under the microscope.
Fig. 4 (b) is the cellular construction dimensional drawing of the device of present invention experiment production.
Fig. 5 is a kind of terahertz of the super surface modulation device experiment test of open type Terahertz of low voltage drive of the present invention
Hereby wave transmission fitting figure.
Fig. 6 is a kind of terahertz of the super surface modulation device experiment test of open type Terahertz of low voltage drive of the present invention
Hereby wave maximum regulates and controls depth fitted figure.
Wherein, 1 is HR-Si substrate, and 2 be buried gate electrode, and 3 are square vanadium dioxide film block, and 31 be isolation titanium dioxide
Vanadium film, 4 be super superficial layer micro-structure, and 5 be incident THz wave, and 6 be metal strip, and 7 be H-type groove, and 8 are square metal block.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
A kind of super surface modulation device of the open type Terahertz of low voltage drive, including HR-Si substrate 1, buried gate electrode 2, two
Vanadium oxide film and super superficial layer micro-structure 4, buried gate electrode 2 are to carry out constituency to HR-Si substrate 1 using diffusion technique to mix
Miscellaneous preparation and be formed in inside HR-Si substrate 1, be successively vanadium dioxide film, super superficial layer on the upside of 1 surface of HR-Si substrate
Micro-structure 4；Vanadium dioxide film includes that square vanadium dioxide film block 3 and isolation vanadium dioxide film 31, super superficial layer are micro-
Structure 4 is made of several metal structure unit periodic arrangements, and each metal structure unit is a square-shaped metal block 8,
It is equipped with a H-type groove 7 in the middle part of each square-shaped metal block, a square titanium dioxide is equipped with below the traversing section among H-type groove
Vanadium film block 3, traversing section and square vanadium dioxide film block 3 among H-type groove contact, and each square-shaped metal block and bury grid
The contact position of electrode is isolated by isolation vanadium dioxide film 31, and the bottom of each square-shaped metal block is connected by metal strip 6,
And finally it is connected with drain electrode.Buried gate electrode 2, vanadium dioxide film and super superficial layer micro-structure 4 play THz wave amplitude,
The effect of phase dynamic regulation.
Oxide is added between HR-Si substrate 1 and vanadium dioxide film as insulating layer.Slow down electric current generation in this way
The propagation of Joule heat promotes vanadium dioxide film performance, increases the flexibility of device design, reduces device and prepares difficulty.
Buried gate electrode 2, vanadium dioxide film and super superficial layer micro-structure 4 in entire device are by same High Resistivity Si
Substrate 1 is process by the standard semi-conductor processes of etching, doping, oxidation, photoetching.
The HR-Si substrate 1 is intrinsic or high-resistance semi-conductor Si material, Ω μm of resistivity >=1000 cm.It reduces
The loss of THz wave.
The buried gate electrode 2 is formed by adulterating to the progress of HR-Si substrate 1 constituency, and conductive capability power passes through
Doping concentration is controlled to adjust, the minimum widith of buried gate electrode 2 is between 3 μm -5 μm.
The vanadium dioxide film is with a thickness of 20nm-80nm, sheet resistance >=2000 Ω/ when the phase that insulate, when metal phase
Sheet resistance≤20 Ω/.The voltage of the work of driving element needed for vanadium dioxide film thickness is thinner is with regard to smaller.
Vanadium dioxide film cutting technique is to do exposure mask with photoresist, dry etching falls using standard dry etching technics
Extra part.Due to VO2Film is very thin, therefore etch period is very short, guarantees that vanadium dioxide film will not be because of heating process
And penalty occurs.
The super superficial layer micro-structure 4 is that gold thin film is coated with using magnetron sputtering technique to constitute, and the thickness of gold thin film is not
Less than 100nm.The continuity of device architecture after adhesion and preparation to guarantee gold thin film.
Oxide between HR-Si substrate 1 and vanadium dioxide film is SiO2Or Al2O3Or hafnium oxide.
Transmission amplitude can be with consecutive variations, in 400GHz-488GHz device under the action of voltage within the scope of 0.2-0.6THz
Part modulation depth reaches 80% or more, and modulation depth is up to 95% at 0.45THz.
The present embodiment also provides a kind of preparation method of the super surface modulation device of open type Terahertz of above-mentioned low voltage drive,
Including the following steps:
Step 1, using electromagnetic simulation software CST Microwave Studio, establish the super surface micro-structure unit 3D of silicon substrate
Model, wherein silicon base is with a thickness of 100 μm, and vanadium dioxide film is with a thickness of 80nm, resistivity when vanadium dioxide film high-impedance state
For 10000 Ω/, resistivity is 20 Ω/ when low resistance state, after setting boundary condition and solver, is optimized single in micro-structure
First period p, the side length a, the square wide w and vanadium dioxide film side length g of loop wire of gold thin film Fang Huan bury the wide wl of grid line, to obtain maximum
Transmission rate variance；
Silicon chip: being put into the beaker for fill acetone first and be cleaned by ultrasonic 15min by step 2, cleaning semiconductor silicon substrate,
Then alcohol ultrasonic cleaning 15min is reused, is finally cleaned by ultrasonic 15min using deionized water, the silicon chip after cleaning is used again
It is dried with nitrogen, it is dry in baking oven；
Step 3 prepares buried gate electrode: after designing according to designed microstructure size and process mask plate, first silicon
Substrate is put into thermal oxidation furnace, using the silicon dioxide mask layer of dry-oxygen oxidation method growth 500nm thickness, is being hindered using photoetching technique
The figure of grid is buried in production in barrier, then dry etching barrier layer forms the doping groove of silicon electrode, and electrode line is respectively 3.8 μm
With 19.0 μm；Phosphorus is reused as thermal diffusion source；In prediffusion, whole process is passed through 1L/min nitrogen stream as protection gas, uses
In-furnace temperature is increased to 850 DEG C by 50min, and is sent into substrate at this temperature；15min rises to 1000 DEG C, keeps at 1000 DEG C
Then 40min is cooled to 850 DEG C in 30min, take out substrate, finally get rid of remaining silica using BOE water bath Method
The phosphorosilicate glass generated during barrier layer and prediffusion；It is spread again later, uses 50min under the protection of 1L/min nitrogen stream
Time the temperature in furnace is risen to 850 DEG C, and be sent into substrate at this temperature；Continue to heat up, change logical oxygen at this time, flow is
1000 DEG C are risen to after 1L/min, 15min, keep 30min；Then start to cool down, make in furnace under 1L/min nitrogen stream in 30min
Temperature drops to 850 DEG C, takes out substrate；It is 5 Ω/ that the buried gate electrode being prepared, which measures electrode sheet resistance,；
Step 4 prepares vanadium dioxide film: being penetrated using radio frequency magnetron sputtering method using high purity vanadium metal as target
Frequency power 180w-220w, operating air pressure 1Pa, oxygen argon flow-rate ratio 4%-6%, under conditions of 550 DEG C of heating temperature, in High Resistivity Si
The vanadium dioxide film of on piece deposition 80nm；
Step 5, cutting vanadium dioxide film: required for being made on coated vanadium dioxide film using photoetching technique
Block pattern, exposure mask is done with photoresist, using dry carving technology be not photo-etched glue blocking partial etching fall, recycle third
The method that ketone impregnates removes photoresist；
Step 6, preparation gold thin film layer: the figure of needs is made on the vanadium dioxide film etched using photoetching technique
Shape recycles magnetically controlled sputter method in the gold nanometer film of High Resistivity Si on piece deposition 100-200nm；
Step 7 is tested using Terahertz transmission performance of the terahertz time-domain spectroscopy system THz-TDS to device, too
Hertz wave is provided by the incidence of super superficial layer micro-structure side, device institute making alive by constant pressure source, and positive and negative anodes are connected respectively to Jenner
The both ends of rice film and buried gate electrode after applying 0-13V voltage, record THz-TDS system data at once.
Dependence test result is as follows:
Fig. 5 is the transmissivity test fitted figure of the super surface modulation device of present invention experiment preparation, and curve is respectively in figure
Apply 0V in the super surface device of preparation, 1V, the transmissivity result of variations that when 8V and 13V voltage obtains.When being applied on device
When the voltage added is 0V, transmittance values are up to 51.7% at 0.3THz, when the voltage applied on device is 13V,
Transmittance values minimum 23.1% at 0.41THz.It calculates, depicts according to the transmissivity test value that voltage is 0V and 13V is applied
Curve such as Fig. 6 that device changes in 0.2-0.6THz modulation depth, by curve graph it can be seen that at 0.36THz modulation depth
It is up to 59%.Since the time that vanadium dioxide film phase transformation occurs is very short, usually picosecond magnitude, and before transformation temperature
Resistance change afterwards is also very small.Following period of time before phase transformation occurs and after occurring, the transmissivity amplitude of variation of device
Also very small, and only when phase transformation occurs, just great changes have taken place for meeting for the amplitude of transmissivity, therefore in an experiment, we only observe
The variation of transmissivity after having arrived before phase change.And the curve substantially phase that the trend for testing obtained transmittance graph is obtained with emulation
Together.
The principle of the present invention and its effect is only illustrated in above embodiment, and is not intended to limit the present invention.It is any
Those skilled in the art all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.
Therefore, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by all those of ordinary skill in the art
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of super surface modulation device of the open type Terahertz of low voltage drive, it is characterised in that: including HR-Si substrate (1),
Buried gate electrode (2), vanadium dioxide film and super superficial layer micro-structure (4), buried gate electrode (2) are using diffusion technique to high resistant
Silicon substrate (1) carries out constituency doping preparation and is formed in inside HR-Si substrate (1), on the upside of HR-Si substrate (1) surface successively
It is vanadium dioxide film, super superficial layer micro-structure (4)；Vanadium dioxide film include square vanadium dioxide film block (3) and every
From vanadium dioxide film (31), super superficial layer micro-structure (4) is made of several metal structure unit periodic arrangements, Mei Gejin
Category structural unit is a square-shaped metal block (8), is equipped with a H-type groove (7) in the middle part of each square-shaped metal block, in H-type groove
Between traversing section below be equipped with a square vanadium dioxide film block (3), traversing section and square titanium dioxide among H-type groove
Vanadium film block (3) contact, the contact position of each square-shaped metal block and buried gate electrode by isolation vanadium dioxide film (31) every
From the bottom of each square-shaped metal block is connected by metal strip (6), and is finally connected with drain electrode.
2. a kind of super surface modulation device of the open type Terahertz of low voltage drive according to claim 1, it is characterised in that:
Oxide is added between HR-Si substrate (1) and vanadium dioxide film as insulating layer.
3. a kind of super surface modulation device of the open type Terahertz of low voltage drive according to claim 1, it is characterised in that:
Buried gate electrode (2), vanadium dioxide film and super superficial layer micro-structure (4) in entire device are by same HR-Si substrate
(1) it is process by the standard semi-conductor processes of etching, doping, oxidation, photoetching.
4. a kind of super surface modulation device of the open type Terahertz of low voltage drive according to claim 1, it is characterised in that:
The HR-Si substrate (1) is intrinsic or high-resistance semi-conductor Si material, Ω μm of resistivity >=1000 cm.
5. a kind of super surface modulation device of the open type Terahertz of low voltage drive according to claim 1, it is characterised in that:
The buried gate electrode (2) is formed by adulterating to HR-Si substrate (1) progress constituency, and conductive capability power passes through control
Doping concentration is adjusted, and the minimum widith of buried gate electrode (2) is between 3 μm -5 μm.
6. a kind of super surface modulation device of the open type Terahertz of low voltage drive according to claim 1, it is characterised in that:
The vanadium dioxide film is with a thickness of 20nm-80nm, sheet resistance >=2000 Ω/ when the phase that insulate, film side when metal phase
Hinder≤20 Ω/.
7. a kind of super surface modulation device of the open type Terahertz of low voltage drive according to claim 1, it is characterised in that:
Vanadium dioxide film cutting technique is to do exposure mask with photoresist, dry etching falls extra portion using standard dry etching technics
Point.
8. a kind of super surface modulation device of the open type Terahertz of low voltage drive according to claim 1, it is characterised in that:
The super superficial layer micro-structure (4) is that gold thin film is coated with using magnetron sputtering technique to constitute, and the thickness of gold thin film is not less than
100nm。
9. a kind of super surface modulation device of the open type Terahertz of low voltage drive according to claim 2, it is characterised in that:
Oxide between HR-Si substrate (1) and vanadium dioxide film is SiO2Or Al2O3Or hafnium oxide.
10. the preparation side of the super surface modulation device of the open type Terahertz of low voltage drive described in claim 1 to 9 any one
Method, it is characterised in that: including the following steps:
Step 1, using electromagnetic simulation software CST Microwave Studio, establish the super surface micro-structure unit 3D mould of silicon substrate
Type after setting boundary condition and solver, optimizes unit period p in micro-structure, the side length a of gold thin film Fang Huan, square loop wire is wide
W and vanadium dioxide film side length g, buries the wide wl of grid line, to obtain maximum transmission rate variance；
Step 2, cleaning semiconductor silicon substrate: silicon chip is put into first in the beaker for fill acetone and is cleaned by ultrasonic, then made again
It is cleaned by ultrasonic with alcohol, is finally cleaned by ultrasonic using deionized water, the silicon chip after cleaning with being dried with nitrogen, is done in baking oven again
It is dry；
Step 3 prepares buried gate electrode: after designing according to designed microstructure size and process mask plate, first silicon chip
It is put into thermal oxidation furnace, silicon dioxide mask layer is grown using dry-oxygen oxidation method, is made and is buried over the barrier layer using photoetching technique
The figure of grid, then dry etching barrier layer form the doping groove of silicon electrode, and electrode line is respectively 3.8 μm and 19.0 μm；Again
Use phosphorus as thermal diffusion source；In prediffusion, whole process is passed through 1L/min nitrogen stream as protection gas, with 50min by in-furnace temperature
850 DEG C are increased to, and is sent into substrate at this temperature；15min rises to 1000 DEG C, in 1000 DEG C of holding 40min, then exists
It is cooled to 850 DEG C in 30min, takes out substrate, finally gets rid of remaining silicon dioxide blocking layer and pre-expansion using BOE water bath Method
The phosphorosilicate glass generated during dissipating；It is spread again later, it will be in furnace with the time of 50min under the protection of 1L/min nitrogen stream
Temperature rise to 850 DEG C, and be sent into substrate at this temperature；Continue to heat up, changes logical oxygen, flow 1L/min, 15min at this time
After rise to 1000 DEG C, keep 30min；Then start to cool down, so that in-furnace temperature is dropped to 850 under 1L/min nitrogen stream in 30min
DEG C, take out substrate；It is 5 Ω/ that the buried gate electrode being prepared, which measures electrode sheet resistance,；
Step 4 prepares vanadium dioxide film: radio frequency magnetron sputtering method is utilized, using high purity vanadium metal as target, in radio frequency function
Rate 180w-220w, operating air pressure 1Pa, oxygen argon flow-rate ratio 4%-6%, under conditions of 550 DEG C of heating temperature, in High Resistivity Si on piece
Deposit the vanadium dioxide film of 80nm；
Step 5, cutting vanadium dioxide film: side required for being made on coated vanadium dioxide film using photoetching technique
Block graphics does exposure mask with photoresist, and the partial etching for not being photo-etched glue blocking is fallen using dry carving technology, recycles acetone leaching
The method of bubble removes photoresist；
Step 6, preparation gold thin film layer: making the figure of needs using photoetching technique on the vanadium dioxide film etched, then
The gold nanometer film of 100-200nm is deposited in High Resistivity Si on piece using magnetically controlled sputter method；
Step 7 is tested, Terahertz using Terahertz transmission performance of the terahertz time-domain spectroscopy system THz-TDS to device
Wave is provided by the incidence of super superficial layer micro-structure side, device institute making alive by constant pressure source, and it is thin that positive and negative anodes are connected respectively to gold nano
The both ends of film and buried gate electrode record THz-TDS system data after applying required voltage at once.
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| CN110445553A (en) * | 2019-08-27 | 2019-11-12 | 桂林电子科技大学 | A kind of 2 code devices of voltage-controlled Terahertz and method |
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| CN111884593A (en) * | 2020-08-04 | 2020-11-03 | 重庆邮电大学 | Ring-shaped opening terahertz amplitude modulator based on HEMT and manufacturing method |
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| CN112285952A (en) * | 2020-09-17 | 2021-01-29 | 首都师范大学 | Programmable terahertz memory modulation device and system based on vanadium dioxide |
| CN112285952B (en) * | 2020-09-17 | 2023-11-24 | 首都师范大学 | Programmable terahertz memory modulation device and system based on vanadium dioxide |
| CN112787203A (en) * | 2020-12-17 | 2021-05-11 | 中国人民解放军空军工程大学 | Transmission type silicon-based electrically-adjustable terahertz dynamic device and preparation method thereof |
| CN112909564A (en) * | 2020-12-31 | 2021-06-04 | 华南理工大学 | Electrical triggering reconfigurable terahertz digital super surface based on vanadium oxide phase change |
| CN113406815A (en) * | 2021-05-19 | 2021-09-17 | 华南理工大学 | Terahertz active super-surface amplitude type spatial modulator |
| WO2023226503A1 (en) * | 2022-05-27 | 2023-11-30 | 华为技术有限公司 | Phase shifter and communication device |
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