CN102707537A - Tunable metamaterial absorber based on phase-change materials - Google Patents
Tunable metamaterial absorber based on phase-change materials Download PDFInfo
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- CN102707537A CN102707537A CN2012102380326A CN201210238032A CN102707537A CN 102707537 A CN102707537 A CN 102707537A CN 2012102380326 A CN2012102380326 A CN 2012102380326A CN 201210238032 A CN201210238032 A CN 201210238032A CN 102707537 A CN102707537 A CN 102707537A
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Abstract
The invention provides a tunable metamaterial absorber based on a phase-change material. The phase-change material is induced into a metamaterial based on multilayer structures to enable a working band which absorbs spectra to have a tunability so as to solve the technical problem that the absorber is narrow in spectrum absorption range. According to the tunable metamaterial absorber based on the phase-change material, by means of the characteristic that the dielectric coefficient of the phase-change material changes with the changes of an additional electric field or a temperature, the tunability for the absorber to absorb the spectra is achieved, and the maximum amplitude of accommodation can reach 900 nm.
Description
Technical field
The present invention relates to a kind of tunable meta-material absorber (Metamaterial Absorber), can be applicable to fields such as optoelectronic switch, solar cell, gasmetry based on phase-change material (GST).
Background technology
The unusual electromagnetic property of ultra material (Metamaterial) can break through the physics limit of traditional sucrose, realizes many novel capabilities, for example, breaks through the wavelength limit of existing lens, realizes having " the perfect lens " of sub-wavelength imaging characteristics; Also the effective travel path of guide electromagnetic waves realizes that real electromagnetism is stealthy.Particularly the absorber based on ultra material is proved to be the energy that can well absorb incident electromagnetic wave, has therefore obtained researcher's extensive concern.Yet this research field also faces new challenges simultaneously; Such as; Because the low excessively problem of the narrow absorption efficiency that causes of working frequency range of its absorption spectrum; In order to address this problem, people have done a lot of trials, have formed the new research focus in electromagnetics field thus: tunable meta-material absorber.
Utilize ultra material to realize the existing a lot of reports of novel absorber, become one of sciemtifec and technical sphere of forefront.And the meta-material absorber with frequency tunability has obtained people's extensive concern especially.2006, H.T.Chen proposed can make the amplitude and the working band of the absorption spectrum of meta-material absorber have tunability through the electronics injection.2008, H.T.Chen develops again can be through the absorption spectrum of the assorted tuning meta-material absorber of beche-de-mer without spike, and The above results is described as the important breakthrough in Absorber Investigation field respectively by the Nature report.In the same year, D.R.Smith proposes and can realize tunable meta-material absorber through the control variation of temperature.2012, people such as A.Minovich will surpass material and be immersed among the liquid crystal, regulate the birefraction of liquid crystal and then the frequency tunability of realization absorption spectrum through extra electric field.
, above-mentioned tunable meta-material absorber needs to introduce adding adjustable device, and this will increase the complicacy of meta-material absorber structure.And liquid crystal has flowability and corrosivity, brings very big difficulty will for the practical application of meta-material absorber.
As can directly regulate the specific inductive capacity of meta-material absorber, the realization difficulty with effectively simplifying tunable meta-material absorber advances its practicalization greatly.Therefore, the present invention provides a kind of tunable meta-material absorber based on phase-change material.Through the metal layer at top at metal level-phase-change material layers-metal level-oxide layer sandwich construction, the hole array that preparation has periodic structure makes it have tunable absorption spectrum, thereby solves the narrow technical matters of meta-material absorber absorption spectrum.The characteristic that the present invention utilizes the phase-change material dielectric coefficient to change with extra electric field or temperature change realizes the tunable of meta-material absorber frequency of operation, and the maximal regulated amplitude can reach 900nm.
Summary of the invention
The present invention is directed to the problem of above-mentioned tunable meta-material absorber, a kind of tunable meta-material absorber based on phase-change material is provided, characteristics such as that this device has is simple in structure, processing ease, frequency of operation tuning range are big.
The present invention's technical scheme that adopts of dealing with problems is following:
Be based on the device of sandwich construction based on the tunable meta-material absorber of phase-change material.Hole array through in design of its metal layer at top and manufacturing cycle property structure can make it have magnetic dipole, thus can in special frequency, produce amplitude bigger absorption spectrum.Through changing the specific inductive capacity of phase-change material, make this absorption spectrum generation frequency displacement again, thereby realize the tunable meta-material absorber of amplitude.Described sandwich construction is to form through growing metal layer, phase-change material layers, metal level and oxide layer on glass substrate; The width of metal level at 1 micron to 2 centimetres, height in 20 nanometers to 10 micron, the phase-change material layers width at 1 micron to 2 centimetres, height in 20 nanometers to 10 micron; The oxide layer width at 1 micron to 2 centimetres, height in 1 nanometer to 1 micron.Metal level comprises Al, Ag, Au, Cu, Ni.Phase-change material layers comprises GeTe, Ge
2Sb
2Te
5, Ge
1Sb
2Te
4, Ge
2Sb
2Te
4, Ge
3Sb
4Te
8, Ge
15Sb
85, Ag
5In
6Sb
59Te
30Oxide layer comprises In
2O
3, SnO
2, ITO.
Described periodicity hole matrix hole is triangle, square, circular, oval, arc, cruciform, hexagon; The width in hole in 20 nanometers to 1 micron, height in 60 nanometers to 30 micron.Periodically hole matrix can be realized through dry method or wet-etching technology; Like electron beam exposure (E-beam lithography), FIB exposure (Focus Ion Beam lithography) and reactive ion beam etching (RIBE) (Reactive Ion Etching; RIE) etc.; Be characterized in bottom flat, hole wall is smooth, and side view is not limit.
Described sandwich construction can pass through the material growth technique to be realized, like electron beam evaporation, and metal organic compound chemical gaseous phase deposition, vapor phase epitaxial growth, and molecular beam epitaxy technique
Described tunable meta-material absorber based on phase-change material can change the phase-change material dielectric coefficient, and then realize tunable absorption spectrum through control extra electric field or temperature.
Test macro of the present invention is accomplished by Fu Shi conversion infrared spectrum analysis appearance, through Fu Shi conversion infrared spectrum analysis appearance the absorption spectrum of said device is tested.
Description of drawings
Fig. 1 is tunable meta-material absorber synoptic diagram.
Fig. 2 is that tunable meta-material absorber is made schematic flow sheet one.
Fig. 3 is that tunable meta-material absorber is made schematic flow sheet two.
Fig. 4 is tunable meta-material absorber test result figure.
Fig. 5 is the different shape synoptic diagram of tunable meta-material absorber.
Among the figure: 1 glass substrate, 2 sandwich constructions, 3 metal levels, 4 phase-change material layers, 5 oxide layers, 6 masks, 7 periodicity hole matrixs, 8 tunable meta-material absorbers
Embodiment
For making the content of technical scheme of the present invention more clear, be described in detail embodiment of the present invention below in conjunction with technical scheme and accompanying drawing.Material growing technology wherein comprises: electron beam evaporation, metal organic compound chemical gaseous phase deposition, common technologies such as vapor phase epitaxial growth and molecular beam epitaxy technique.Mask process wherein comprises common technologies such as electron beam exposure and FIB exposure.Etching technics wherein comprises wet etching and dry etching, like conventional process such as acid system etching, electron beam lithography, focused-ion-beam lithography and reactive ion beam etching (RIBE)s.
At first, utilize the material growth technique on glass substrate 1, to form sandwich construction (metal level 3-phase-change material layers 4-metal level 3-oxide layer 5) 2, shown in accompanying drawing 2 (a).
Secondly, on sandwich construction 2, deposit SiO
2Film is as mask 6, shown in accompanying drawing 2 (b).
Then, through mask process with the cycle hole matrix sample conversion that designs to mask, shown in accompanying drawing 2 (c).Wherein, structure Design can adopt finite time-domain method of difference, finite element method scheduling algorithm.
Then, through etching technics, manufacturing cycle property hole matrix 7 on metal layer at top 3 is shown in accompanying drawing 2 (d)
At last, remove mask 6, obtain tunable meta-material absorber 8, shown in accompanying drawing 2 (e).
At first, utilize the material growth technique on glass substrate 1, to form N (N >=1) layer multi-layer structure (metal level 3-phase-change material layers 4-metal level 3-oxide layer 5) 2, shown in accompanying drawing 3 (a).
Secondly, on sandwich construction 2, deposit SiO
2Film is as mask 6, shown in accompanying drawing 3 (b).
Then, through mask process with the cycle hole matrix sample conversion that designs to mask, shown in accompanying drawing 3 (c).Wherein, structure Design can adopt finite time-domain method of difference, finite element method scheduling algorithm.
Then, through etching technics, manufacturing cycle property hole matrix 7 on metal layer at top 3 is shown in accompanying drawing 3 (d)
At last, remove mask 6, in hole matrix 7, inject phase-change material 4 sealing of holes, obtain tunable meta-material absorber 8, shown in accompanying drawing 3 (e).
Test macro of the present invention mainly is made up of Fu Shi conversion infrared spectrum analysis appearance.Can change the phase-change material dielectric coefficient through control extra electric field or temperature, and then the frequency of operation of the absorption spectrum of tuning said meta-material absorber.Said test results of devices is shown in accompanying drawing 4, and the maximum tuning range of the absorption spectrum frequency of operation of device can reach 900nm.
In sum, the tunable meta-material absorber based on phase-change material provided by the invention can carry out tuning through temperature and extra electric field to the frequency of operation of its absorption spectrum, has advantages such as simple in structure, processing ease, tuning range be big.
The above is know-why and instantiation that the present invention uses, the equivalent transformation of doing according to conception of the present invention, as long as when the scheme that it used does not exceed spiritual that instructions and accompanying drawing contain yet, and all should be within the scope of the invention, explanation hereby.
Claims (6)
1. the tunable meta-material absorber based on phase-change material is characterized in that, this absorber is based on sandwich construction, and its metal layer at top has the hole array of periodic structure; Described sandwich construction is to form through growing metal layer, phase-change material layers, metal level and oxide layer on glass substrate; The width of metal level at 1 micron to 2 centimetres, height in 20 nanometers to 10 micron, the phase-change material layers width at 1 micron to 2 centimetres, height in 20 nanometers to 10 micron; The oxide layer width at 1 micron to 2 centimetres, height in 1 nanometer to 1 micron; Described periodicity hole matrix hole is triangle, square, circular, oval, arc, cruciform, hexagon; The width in hole in 20 nanometers to 1 micron, height in 60 nanometers to 30 micron.
2. tunable meta-material absorber according to claim 1 is characterized in that, metal layer A l, Ag, Au, Cu, Ni.
3. tunable meta-material absorber according to claim 1 is characterized in that phase-change material layers comprises GeTe, Ge
2Sb
2Te
5, Ge
1Sb
2Te
4, Ge
2Sb
2Te
4, Ge
3Sb
4Te
8, Ge
15Sb
85, Ag
5In
6Sb
59Te
30
4. tunable meta-material absorber according to claim 1 is characterized in that oxide layer is In
2O
3, SnO
2, ITO.
5. tunable meta-material absorber according to claim 1 is characterized in that, sandwich construction can be realized through the material growth technique, comprise electron beam evaporation, metal organic compound chemical gaseous phase deposition, vapor phase epitaxial growth, molecular beam epitaxy.
6. tunable meta-material absorber according to claim 1 is characterized in that, periodically hole matrix is realized through dry method or wet-etching technology, comprises electron beam exposure, FIB exposure, reactive ion beam etching (RIBE).
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| CN103018926A (en) * | 2012-12-13 | 2013-04-03 | 大连理工大学 | Tunable microwave-absorbing artificial electromagnetic metamaterial based on topology/graphene |
| CN103018925A (en) * | 2012-12-13 | 2013-04-03 | 大连理工大学 | Artificial electromagnetic metamaterial with tunable circular dichroism based on topology/graphene material |
| CN103247861A (en) * | 2013-05-16 | 2013-08-14 | 大连理工大学 | Multilayer asymmetrical metamaterial capable of realizing Fano resonance enhancement |
| CN103247839A (en) * | 2013-04-02 | 2013-08-14 | 华中科技大学 | Switching-controllable THz wave metamaterial perfect absorber and control method thereof |
| CN103337709A (en) * | 2013-06-05 | 2013-10-02 | 清华大学 | A tunable all dielectric isotropy phase controller and a phase control method |
| EP3179297A1 (en) * | 2015-12-09 | 2017-06-14 | Samsung Electronics Co., Ltd. | Meta device |
| CN107048517A (en) * | 2017-01-31 | 2017-08-18 | 大连理工大学 | A kind of stealthy cape of controllable Two-Dimensional Heat based on multilayer paraffin phase change material |
| CN107080305A (en) * | 2017-01-31 | 2017-08-22 | 大连理工大学 | A kind of stealthy cape of controllable Three Dimensional Thermal based on multi-layer transparent conductive oxide |
| CN107114833A (en) * | 2017-01-31 | 2017-09-01 | 大连理工大学 | A kind of stealthy cape of controllable Two-Dimensional Heat based on multi-layer nano fluid |
| CN107136589A (en) * | 2017-01-31 | 2017-09-08 | 大连理工大学 | A kind of stealthy cape of controllable three-dimensional optical based on multilayer liquid crystal material |
| CN109814283A (en) * | 2019-03-27 | 2019-05-28 | 电子科技大学 | The super surface modulation device of the open type Terahertz of low voltage drive and preparation method |
| CN110600888A (en) * | 2013-03-15 | 2019-12-20 | 伟创力有限责任公司 | Method for manufacturing a radio frequency absorber skin |
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| CN103018925B (en) * | 2012-12-13 | 2016-04-06 | 大连理工大学 | Based on the artificial electromagnetic Meta Materials with tunable circular dichroism of topological sum grapheme material |
| CN103018925A (en) * | 2012-12-13 | 2013-04-03 | 大连理工大学 | Artificial electromagnetic metamaterial with tunable circular dichroism based on topology/graphene material |
| CN103018926A (en) * | 2012-12-13 | 2013-04-03 | 大连理工大学 | Tunable microwave-absorbing artificial electromagnetic metamaterial based on topology/graphene |
| CN110600888A (en) * | 2013-03-15 | 2019-12-20 | 伟创力有限责任公司 | Method for manufacturing a radio frequency absorber skin |
| CN103247839A (en) * | 2013-04-02 | 2013-08-14 | 华中科技大学 | Switching-controllable THz wave metamaterial perfect absorber and control method thereof |
| CN103247839B (en) * | 2013-04-02 | 2015-04-15 | 华中科技大学 | Switching-controllable THz wave metamaterial perfect absorber and control method thereof |
| CN103247861A (en) * | 2013-05-16 | 2013-08-14 | 大连理工大学 | Multilayer asymmetrical metamaterial capable of realizing Fano resonance enhancement |
| CN103247861B (en) * | 2013-05-16 | 2015-12-23 | 大连理工大学 | A kind of asymmetric Meta Materials of multilayer that can produce method promise resonant check |
| CN103337709A (en) * | 2013-06-05 | 2013-10-02 | 清华大学 | A tunable all dielectric isotropy phase controller and a phase control method |
| CN103337709B (en) * | 2013-06-05 | 2015-05-20 | 清华大学 | A tunable all dielectric isotropy phase controller and a phase control method |
| EP3179297A1 (en) * | 2015-12-09 | 2017-06-14 | Samsung Electronics Co., Ltd. | Meta device |
| US10274756B2 (en) | 2015-12-09 | 2019-04-30 | Samsung Electronics Co., Ltd. | Meta device |
| CN107048517A (en) * | 2017-01-31 | 2017-08-18 | 大连理工大学 | A kind of stealthy cape of controllable Two-Dimensional Heat based on multilayer paraffin phase change material |
| CN107080305A (en) * | 2017-01-31 | 2017-08-22 | 大连理工大学 | A kind of stealthy cape of controllable Three Dimensional Thermal based on multi-layer transparent conductive oxide |
| CN107114833A (en) * | 2017-01-31 | 2017-09-01 | 大连理工大学 | A kind of stealthy cape of controllable Two-Dimensional Heat based on multi-layer nano fluid |
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