CN110161724B - Electro-optical modulator, modulation method and preparation method of electro-optical modulator - Google Patents
Electro-optical modulator, modulation method and preparation method of electro-optical modulator Download PDFInfo
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- CN110161724B CN110161724B CN201910267102.2A CN201910267102A CN110161724B CN 110161724 B CN110161724 B CN 110161724B CN 201910267102 A CN201910267102 A CN 201910267102A CN 110161724 B CN110161724 B CN 110161724B
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
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Abstract
The invention discloses an electro-optical modulator, a modulation method and a preparation method of the electro-optical modulator, wherein the electro-optical modulator comprises the following components: a substrate layer 1; the interlayer structure layer is positioned on the substrate layer 1 and sequentially comprises a first graphene layer 2, a silicon layer 3 and a second graphene layer 4 from bottom to top; a cladding layer 5 on the sandwich structure layer; and the nanowire 6 is embedded in the cladding 5, and a gap is reserved between the nanowire 6 and the sandwich structure. According to the invention, the light propagation length is obtained according to the external voltage applied to the joint of the second graphene layer 4 and the cladding 5 of the electro-optical modulator, and the output modulation is carried out according to the relation between the light propagation length and the length of the electro-optical modulator, namely the final modulation is realized by controlling the external voltage, so that the modulation depth is close to 100%.
Description
Technical Field
The invention belongs to the technical field of nano optical devices, and particularly relates to an electro-optical modulator, a modulation method of the electro-optical modulator and a preparation method of the electro-optical modulator.
Background
With the development of nanophotonics and the improvement of integration level, the photoelectric digital integrated circuit technology has the problems of physical property optimization and process manufacturing, such as high bit error rate, high dynamic power consumption, low modulation bandwidth and high process tolerance difference caused by low modulation depth. To solve the above problems, various novel device structures, materials, and operation mechanisms are continuously proposed for achieving higher performance, lower power consumption, and faster speed.
Currently, research on novel devices is mainly to modulate the intensity of light signals by regulating and controlling the conductivity of graphene.
However, the low modulation depth greatly increases the bit error rate in the detection process, and adversely affects the information transfer in practical application.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an electro-optical modulator, a modulation method of the electro-optical modulator and a preparation method of the electro-optical modulator. The technical problem to be solved by the invention is realized by the following technical scheme:
an embodiment of the present invention provides an electro-optical modulator, including:
a substrate layer;
the interlayer structure layer is positioned on the substrate layer and sequentially comprises a first graphene layer, a silicon layer and a second graphene layer from bottom to top;
a cladding layer on the sandwich structure layer;
and the nanowire is embedded in the cladding, and a gap is reserved between the nanowire and the interlayer structure.
In one embodiment of the invention, the electro-optic modulator is a cubic structure and has a length of 1-18 μm.
In one embodiment of the invention, the gap is 1-5 nm.
The embodiment of the invention provides a modulation method of an electro-optic modulator, which comprises the following steps:
selecting a first point voltage and a second point voltage;
respectively adding the first point voltage and the second point voltage to the interlayer structure layer to obtain a first light propagation length and a second light propagation length;
respectively obtaining a first optical signal and a second optical signal by utilizing the relationship between the first optical propagation length, the second optical propagation length and the length of the electro-optical modulator;
and realizing modulation by using the first optical signal and the second optical signal.
In one embodiment of the present invention, the first point voltage and the second point voltage include:
the first point voltage is the starting voltage of the modulator and ranges from 0V to 2.15V;
the second point voltage is the closing voltage of the modulator and ranges from 2.2V to 5V.
In an embodiment of the present invention, the step of applying the first point voltage and the second point voltage to the interlayer structure layer to obtain a first light propagation length and a second light propagation length respectively includes:
applying the first point voltage to the junction of the second graphene layer and the cladding layer to obtain a first light propagation length;
and applying the second point voltage to the joint of the second graphene layer and the cladding layer to obtain a second light propagation length.
In one embodiment of the present invention, obtaining the first optical signal and the second optical signal respectively by using the relationship between the first optical propagation length and the electro-optical modulator length comprises:
comparing the first optical propagation length, the second optical propagation length and the length of the electro-optical modulator to form the first optical signal and the second optical signal, respectively.
The embodiment of the invention provides a preparation method of an electro-optical modulator, which comprises the following steps:
preparing a substrate layer;
forming a first graphene layer on the substrate layer;
forming a silicon layer on the surface of the first graphene layer;
forming a second graphene layer on the silicon layer;
forming a cladding layer on the second graphene layer;
forming a nanowire within the cladding;
wherein the substrate layer, the first graphene layer, the silicon layer, the second graphene layer, the cladding layer and the nanowires are the same in length.
In one embodiment of the present invention, forming the nanowire within the cladding comprises:
etching a through hole structure with the diameter smaller than the thickness of the cladding in the cladding by using an ion beam etching method;
and depositing metal in the through hole structure by adopting a sputtering method, wherein the deposited metal structure is a nanowire.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the light propagation length is obtained according to the external voltage applied to the joint of the second graphene layer 4 and the cladding 5 of the electro-optical modulator, and the output modulation is carried out according to the relation between the light propagation length and the length of the electro-optical modulator, namely the final modulation is realized by controlling the external voltage, so that the modulation depth is close to 100%.
2. The low voltage difference between the voltages at the two points of the modulation method enables the modulator of the invention to have very low dynamic power consumption, and the low total resistance enables the modulator to have very high bandwidth.
Drawings
FIG. 1 is a schematic diagram of an electro-optic modulator according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method for manufacturing an electro-optic modulator according to an embodiment of the present invention;
FIGS. 3a to 3e are schematic diagrams of a process for manufacturing an electro-optic modulator according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an implementation of an electro-optic modulator according to an embodiment of the present invention;
FIG. 5 is a graph of applied voltage versus optical transmission length in an electro-optic modulator according to an embodiment of the present invention;
FIG. 6 is a diagram of the optical field distribution in the electro-optic modulator at 1.5V and 2.3V applied voltages provided by an embodiment of the present invention;
fig. 7 is a schematic process error diagram of an electro-optic modulator according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of an electro-optical modulator according to an embodiment of the present invention, where the electro-optical modulator includes:
a substrate layer 1;
wherein the substrate layer 1 is SiO2；
The substrate layer 1 has the following dimensions: the length is 1-18 μm, the width is 300nm-500nm, and the height is 50nm-150 nm.
Preferably, the dimensions of the substrate layer 1 are: length 3 μm, width 400nm, height 100 nm.
The interlayer structure layer is positioned on the substrate layer 1 and sequentially comprises a first graphene layer 2, a silicon layer 3 and a second graphene layer 4 from bottom to top, wherein,
the dimensions of the first graphene layer 2 are: the length is 1-18 μm, the width is 300nm-500nm, and the height is 0.7 nm.
Preferably, the dimensions of the first graphene layer 2 are: length 3 μm, width 400nm, height 0.7 nm.
The dimensions of the silicon layer 3 are: the length is 1-18 μm, the width is 300nm-500nm, and the height is 5nm-20 nm.
Preferably, the dimensions of the silicon layer 3 are: length 3 μm, width 400nm, height 10 nm.
The dimensions of the second graphene layer 4 are: the length is 1-18 μm, the width is 300nm-500nm, and the height is 0.7 nm.
Preferably, the dimensions of the second graphene layer 4 are: length 3 μm, width 400nm, height 0.7 nm.
A cladding layer 5 on the sandwich structure layer;
wherein the dimensions of the cladding 5 are: the length is 1-18 μm, and the width is 300nm-500 nm.
The height of the cladding 5 is 128.6nm-443.6nm if the height of the electro-optical modulator is 300nm-500nm, and 228.6nm-342.6nm if the height of the electro-optical modulator is preferably 400 nm.
Preferably, the dimensions of the cladding 5 are: a length of 3 μm, a width of 400nm, and a height of 288.6nm (when the electro-optic modulator preferably has a height of 400 nm).
The nanowire 6 is embedded in the cladding 5, and a gap is formed between the nanowire 6 and the sandwich structure;
preferably, the nanowire 6 is a cylinder, wherein the nanowire 6 has a diameter d of 100 nm.
Preferably, the nanowires 6 are Ag.
Further, the interlayer structure layer is a graphene-Si-graphene (graphene-silicon-graphene) structure, and a gap between the nanowire 6 and the graphene-Si-graphene structure is g, where the gap g is 1-5 nm.
Preferably, the gap g is 1 nm;
further, the electro-optic modulator is of a cubic structure and has the following dimensions: the length is 1-18 μm, the width is 300nm-500nm, and the height is 300nm-500 nm.
When the length of the electro-optical modulator is too small, the electro-optical modulator has poor attenuation on an optical signal, so that the modulation effect is poor; when the length of the electro-optical modulator is too large, the volume of the electro-optical modulator is too large, which is not favorable for integrating the electro-optical modulator in a circuit.
Further, the length of the modulator may achieve a better modulation effect when it is 2 to 5 μm, and the modulator preferably has a length of 3 μm, because the output "1" is output when the light propagation length range 6.06 to 19.74 μm corresponding to the first point voltage range 0V to 2.15V of the modulator is greater than the length of the modulator, and the output "0" is output when the light propagation length range 0.148 to 0.147 μm corresponding to the second point voltage range 2.2V to 5V is less than the length of the modulator.
Preferably, the electro-optic modulator has the following dimensions: length 3 μm, width 400nm, height 400 nm.
In summary, in the present invention, a light propagation length is obtained by applying a voltage to a connection point of the second graphene layer 4 and the cladding 5 of the electro-optical modulator, and output modulation is performed according to a relationship between the light propagation length and the length of the electro-optical modulator, that is, final modulation is realized by controlling the applied voltage, so that the modulation depth is close to 100%.
Example two
Referring to fig. 2, fig. 2 is a schematic flow chart of a method for manufacturing an electro-optical modulator according to an embodiment of the present invention, and specifically, the method for manufacturing an electro-optical modulator according to the present invention includes the following steps:
step one, preparing a substrate layer 1;
specifically, a buried oxide layer is processed On an SOI (Silicon-On-Insulator, Silicon On an insulating substrate) wafer, the thickness of the buried oxide layer is 2 μm, and the buried oxide layer is etched by using a plasma etching method to form the substrate layer 1.
Preferably, the buried oxide layer is SiO2；
Further, the substrate layer 1 is SiO2。
Step two, forming a first graphene layer 2 on the substrate layer 1;
before the first graphene layer 2 is formed on the substrate layer 1, grating couplers are respectively manufactured at two ends of the substrate layer 1, and specifically, two grating couplers are respectively manufactured at two ends of the substrate layer 1 by using a deep reactive ion etching method.
The grating coupler functions to achieve phase matching of the incident light with the modulator, thereby enabling incident light to enter and exit the modulation structure.
Further, the two ends of the substrate layer 1 refer to two end faces of the substrate layer 1 with width × height.
Preferably, the modulator of the present invention is set to a working wavelength of 1550nm and the grating coupler is set to a period of 780 nm.
Referring to fig. 3a, fig. 3a to 3e are schematic diagrams illustrating a process flow of a preparation process of an electro-optical modulator according to an embodiment of the present invention, specifically, the first graphene layer 2 is formed on the substrate layer 1 by transfer.
Further, graphene is grown on metallic copper by a chemical vapor deposition method, PMMA (polymethyl methacrylate, also called organic glass) is covered on the surface of the graphene, the metallic copper + graphene + PMMA is baked at a temperature of 110 ℃ for 10 minutes, and then is soaked in 45% FeCl3Cleaning the solution, removing metal copper, transferring graphene and PMMA to deionized water by using a PET (Polyethylene terephthalate) substrate for cleaning, fishing out the graphene and PMMA by using the substrate layer 1 after cleaning is finished, finally, putting the transferred graphene and PMMA substrate in a dryer for drying, and naturally cooling the graphene and PMMA substrateThe MMA layer substrate is soaked in an acetone solution or a mixed solution of acetone and isopropanol, single-layer graphene is formed after PMMA is removed, and the single-layer graphene is trimmed in a plasma oxidation mode to form the first graphene layer 2.
Thereby completing the formation of the first graphene layer 2 on the substrate layer 1.
Further, after a section of the first graphene layer 2 is metalized, the section is used as a ground terminal for applying bias.
Wherein, the metallization is to plate a metal film on any section of the first graphene layer 2, so as to facilitate metal connection.
Preferably, the thickness of the PMMA is 200nm, and the PMMA is used to protect the graphene.
Step three, forming a silicon layer 3 on the surface of the first graphene layer 2;
referring to fig. 3b, a silicon layer 3 is grown on the surface of the first graphene layer 2 by using an atomic layer deposition method, and the silicon layer 3 is used for restricting the electric field distribution inside the device.
Step four, forming a second graphene layer 4 on the silicon layer 3;
referring to fig. 3c, specifically, a second graphene layer 4 is formed on the silicon layer 3 by transfer.
Further, the fourth step is the same as the second step, namely, graphene grows on the metal copper through a chemical vapor deposition method, PMMA covers the surface of the graphene, the metal copper, the graphene and the PMMA are baked at the temperature of 110 ℃ for 10 minutes and then soaked in 45% FeCl3Cleaning the solution, removing metal copper, transferring graphene and PMMA to deionized water by using a PET (Polyethylene terephthalate) substrate for cleaning, fishing out the graphene and PMMA layer by using the silicon layer 3 after the cleaning is finished, finally, putting the transferred graphene and PMMA layer substrate in a dryer for drying, soaking the graphene and PMMA layer substrate in an acetone solution or a mixed solution of acetone and isopropanol after the natural cooling, removing the PMMA to form single-layer graphene, and oxidizing the single-layer graphene by using plasmaThe second graphene layer 4 is formed after trimming the graphene.
Thereby completing the formation of the second graphene layer 4 on the silicon layer 3.
Further, after a section of the second graphene layer 4 is metalized, the section is used as a positive terminal of an applied bias voltage, and the bias voltage is the applied voltage.
Wherein, the metallization is to plate a metal film on any section of the second graphene layer 4, so as to facilitate metal connection.
Preferably, the thickness of the PMMA is 200 nm.
Step five, forming a cladding layer 5 on the second graphene layer 4;
referring to fig. 3d, specifically, a cladding layer 5 is deposited on the surface of the second graphene layer 4 by using a chemical vapor deposition method.
Preferably, the cladding 5 is SiO2。
Sixthly, forming a nanowire 6 in the cladding 5;
referring to fig. 3e, specifically, a through hole structure with a diameter smaller than the thickness of the cladding 5 is etched in the cladding 5 by using an ion beam etching method, and then a metal is deposited in the through hole structure by using a sputtering method, where the deposited metal structure is a nanowire 6.
Further, the cylindrical structure of the nanowire 6 can limit light to be between Si and Ag to a great extent, so that the modulation effect can be enhanced to a great extent.
Wherein the substrate layer 1, the first graphene layer 2, the silicon layer 3, the second graphene layer 4, the cladding layer 5 and the nanowire 6 have the same length, that is, the length is 1-18 μm, and the length is the length of the electro-optical modulator;
the substrate layer 1, the first graphene layer 2, the silicon layer 3, the second graphene layer 4 and the cladding layer 5 have the same width, namely the width is 300nm-500nm, and the width is the width of the electro-optical modulator;
the sum of the heights of the substrate layer 1, the first graphene layer 2, the silicon layer 3, the second graphene layer 4 and the cladding layer 5 is 300nm-500nm, and the sum of the heights is the height of the electro-optical modulator.
EXAMPLE III
The modulation method of the electro-optical modulator provided by the embodiment of the invention is implemented on the basis of the modulator structure with the preferred size of the first embodiment, and comprises the following specific steps:
referring to fig. 4, fig. 4 is a schematic diagram illustrating an implementation principle of an electro-optical modulator according to an embodiment of the present invention, wherein,
specifically, the first point voltage is selected as the starting voltage of the modulator and ranges from 0V to 2.15V, and the second point voltage is selected as the closing voltage of the modulator and ranges from 2.2V to 5V.
Further, the light propagation length corresponding to 0V is 6.06 μm, the light propagation length corresponding to 2.15V is 19.74 μm, the light propagation length corresponding to 2.2V is 0.148 μm, and the light propagation length corresponding to 5V is 0.147 μm.
Further, the light propagation length range corresponding to the first point voltage is 6.06-19.74 μm, and the light propagation length range corresponding to the second point voltage is 0.148-0.147 μm, wherein the light propagation length corresponding to the first point voltage is larger than the length of the electro-optical modulator, the light propagation length corresponding to the second point voltage is smaller than the length of the electro-optical modulator, and the modulation of the voltage on the optical signal can be realized by alternately applying the first point voltage and the second point voltage.
In the embodiment of the invention, the preferable first point voltage and the preferable second point voltage are obtained through the following simulation, specifically as follows:
Preferably, the applied voltage is set to be from 0V to 5V, interval: 0.05V, wherein the spacing may also be set to 0.005V, i.e. the smaller the spacing, the higher its accuracy.
As can be seen from fig. 7, the process error of the Ag radius d/2(R) and the gap distance g does not have a large influence on the change of the transmission length of the voltage modulator. Through calculation, the degree of error caused by the process error of the gap distance g under the applied voltage of 1.5V is about 2.89%, the degree of error caused by the process error of the gap distance g under the applied voltage of 2.3V is about 0.58%, the degree of error caused by the process error of d/2(R) under the applied voltage of 1.5V is about 8.84%, and the degree of error caused by the process error of d/2(R) under the applied voltage of 2.3V is about 5.74%.
As a result of the 3 simulations, the first point voltage is preferably 1.5V, and the second point voltage is preferably 2.3V.
respectively adding the first point voltage and the second point voltage to the interlayer structure layer to respectively obtain a first light propagation length and a second light propagation length, wherein the first light propagation length and the second light propagation length comprise:
applying the first point voltage to the junction of the second graphene layer 4 and the cladding layer 5 to obtain a first light propagation length;
specifically, a voltage of 1.5V was applied to the graphene-Si-graphene to obtain the first light propagation length of 19.93 μm.
Applying the second point voltage to the junction of the second graphene layer 4 and the cladding layer 5 to obtain a second light propagation length;
specifically, a voltage of 2.3V was applied to the graphene-Si-graphene to obtain the second light propagation length of 0.14 μm.
obtaining a first optical signal and a second optical signal respectively by using the relationship between the first optical propagation length, the second optical propagation length and the length of the electro-optical modulator comprises:
comparing the first optical propagation length, the second optical propagation length and the length of the electro-optical modulator to form the first optical signal and the second optical signal, respectively.
Specifically, since the first optical propagation length 19.93 μm is much longer than the length of the modulator 3 μm, the optical signal can still be seen at the output port of the modulator of the present invention, that is, the optical signal input into the modulator can reach the output port through the inside of the modulator, which indicates that the optical signal output by the modulator is "1", that is, the optical signal output by the modulator is the first optical signal.
Specifically, since the second optical propagation length 0.14 μm is much smaller than the length 3 μm of the modulator, no visible light signal can be seen at the output port of the modulator of the present invention, i.e. the optical signal input into the modulator cannot pass through the inside of the modulator to reach the output port, which indicates that the output optical signal is "0", i.e. the output optical signal is the second optical signal.
specifically, by alternately outputting the first optical signal and outputting the second optical signal in the above steps, the modulation of the voltage on the optical signal can be finally realized.
The power consumption and 3dB bandwidth of the modulator of the present invention were calculated based on the above-described embodiments.
Calculating power consumption: from the dimensions of this preferred configuration, the capacitance of the modulator can be calculated to be 10.66 fF. Since the voltage difference between the first point voltage and the second point voltage is 0.8V, the energy consumption of the modulator can be calculated to be about 1.71fJ/bit according to a power consumption formula.
Calculate the 3dB bandwidth: from the dimensions of this structure, the resistance of the modulator can be calculated to be 177.93 ohms. Since the capacitance of the modulator is 10.66fF, the 3dB bandwidth of the modulator is calculated to be about 83.91GHz according to the 3dB bandwidth calculation formula.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the light propagation length is obtained according to the external voltage applied to the joint of the second graphene layer 4 and the cladding 5 of the electro-optical modulator, and the output modulation is carried out according to the relation between the light propagation length and the length of the electro-optical modulator, namely the final modulation is realized by controlling the external voltage, so that the modulation depth is close to 100%.
2. The low voltage difference between the voltages at the two points of the modulation method enables the modulator of the invention to have very low dynamic power consumption, and the low total resistance enables the modulator to have very high bandwidth.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (6)
1. An electro-optic modulator, wherein a first point voltage of the electro-optic modulator ranges from 0V to 2.15V, a light propagation length of the electro-optic modulator ranges from 6.06 μm to 19.74 μm corresponding to the first point voltage range from 0V to 2.15V, a second point voltage of the electro-optic modulator ranges from 2.2V to 5V, and a light propagation length of the electro-optic modulator ranges from 0.148 μm to 0.147 μm corresponding to the second point voltage range from 2.2V to 5V, wherein the first point voltage is a turn-on voltage of the electro-optic modulator, and the second point voltage is a turn-off voltage of the electro-optic modulator, the electro-optic modulator comprising:
a substrate layer (1), the length of the substrate layer (1) being 3 μm;
the sandwich structure layer is positioned on the substrate layer (1), the sandwich structure layer sequentially comprises a first graphene layer (2), a silicon layer (3) and a second graphene layer (4) from bottom to top, the lengths of the first graphene layer (2), the silicon layer (3) and the second graphene layer (4) are all 3 micrometers, one section of the first graphene layer (2) is plated with a metal film, and one section of the second graphene layer (4) is plated with a metal film;
a cladding layer (5) on a second graphene layer (4) of the sandwich structure layer, the cladding layer (5) having a length of 3 μm;
the nanowire (6) is embedded in the cladding (5), a gap is reserved between the nanowire (6) and the interlayer structure layer, and the length of the nanowire (6) is 3 mu m.
2. The electro-optic modulator of claim 1, wherein the gap is 1-5 nm.
3. A method of modulating an electro-optic modulator, comprising:
selecting a first point voltage and a second point voltage, wherein the first point voltage is the starting voltage of the electro-optical modulator, the range of the first point voltage is 0V-2.15V, the second point voltage is the closing voltage of the electro-optical modulator, and the range of the second point voltage is 2.2V-5V;
applying the first point voltage and the second point voltage to the sandwich structure layer of the electro-optic modulator according to any one of claims 1 to 2 to obtain a first light propagation length and a second light propagation length, respectively;
applying the first point voltage and the second point voltage to the sandwich structure layer of the electro-optic modulator according to any one of claims 1 to 2 to obtain a first optical propagation length and a second optical propagation length, respectively, comprising:
adding the first point voltage to the joint of the second graphene layer (4) and the cladding (5) to obtain a first light propagation length, wherein the first light propagation length ranges from 6.06 micrometers to 19.74 micrometers;
applying the second point voltage to the joint of the second graphene layer (4) and the cladding layer (5) to obtain a second light propagation length, wherein the second light propagation length is in a range of 0.148-0.147 [ mu ] m;
obtaining a first optical signal and a second optical signal respectively by using the relationship between the first optical propagation length, the second optical propagation length and the length of the electro-optical modulator, wherein the first optical signal is an optical signal output by the electro-optical modulator under the condition of the first optical propagation length, and the second optical signal is an optical signal output by the electro-optical modulator under the condition of the second optical propagation length;
and realizing modulation by using the first optical signal and the second optical signal.
4. The modulation method according to claim 3, wherein obtaining the first optical signal and the second optical signal using the relationship between the first optical propagation length and the electro-optical modulator length comprises:
comparing the first optical propagation length, the second optical propagation length and the length of the electro-optical modulator to form the first optical signal and the second optical signal, respectively.
5. A method for preparing an electro-optical modulator is characterized in that a first point voltage range of the electro-optical modulator is 0V-2.15V, a light propagation length range corresponding to the first point voltage range of 0V-2.15V is 6.06-19.74 μm, a second point voltage range is 2.2V-5V, a light propagation length range corresponding to the second point voltage range of 2.2V-5V is 0.148-0.147 μm, the first point voltage is an opening voltage of the electro-optical modulator, and the second point voltage is an closing voltage of the electro-optical modulator, and the method comprises the following steps:
preparing a substrate layer (1), wherein the length of the substrate layer (1) is 3 mu m;
forming a first graphene layer (2) on the substrate layer (1), wherein the length of the first graphene layer (2) is 3 microns, and one section of the first graphene layer (2) is plated with a metal film;
forming a silicon layer (3) on the surface of the first graphene layer (2), wherein the length of the silicon layer (3) is 3 microns;
forming a second graphene layer (4) on the silicon layer (3), wherein the length of the second graphene layer (4) is 3 microns, and one section of the second graphene layer (4) is plated with a metal film;
forming a cladding layer (5) on the second graphene layer (4), the cladding layer (5) having a length of 3 μm;
forming a nanowire (6) in the cladding (5), wherein a gap is formed between the nanowire (6) and the interlayer structure layer, and the length of the nanowire (6) is 3 mu m;
wherein the substrate layer (1), the first graphene layer (2), the silicon layer (3), the second graphene layer (4), the cladding layer (5) and the nanowires (6) are the same length.
6. The method of manufacturing according to claim 5, wherein forming the nanowire (6) within the cladding (5) comprises:
etching a through hole structure with the diameter smaller than the thickness of the cladding (5) in the cladding (5) by using an ion beam etching method;
and depositing metal in the through hole structure by adopting a sputtering method, wherein the deposited metal structure is a nanowire (6).
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