CN111142186B - Nerve synapse of waveguide structure and preparation method thereof - Google Patents
Nerve synapse of waveguide structure and preparation method thereof Download PDFInfo
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- CN111142186B CN111142186B CN201911424036.1A CN201911424036A CN111142186B CN 111142186 B CN111142186 B CN 111142186B CN 201911424036 A CN201911424036 A CN 201911424036A CN 111142186 B CN111142186 B CN 111142186B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
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Abstract
The invention provides a nerve synapse of a waveguide structure, comprising: the planar waveguide layer comprises a ridge waveguide layer (1), a slit structure (2), a phase change material (3) and a planar waveguide layer (4); the slit structure (2) is arranged between the ridge waveguide layers (1) and is in contact with the ridge waveguide layers (1), and a groove structure (5) is formed between the slit structure (2) and the ridge waveguide layers (1); the phase change material (3) fills the groove structure (5), and the phase change material (3) is also arranged on the surfaces of the ridge waveguide layer (1) and the filled groove structure (5); the ridge waveguide layer (1) and the slit structure (2) are arranged above the flat waveguide layer (4), and the single-mode transmission of the waveguide can be realized by the structure formed by the ridge waveguide layer (1), the slit structure (2) and the flat waveguide layer (4). The nerve synapse of the waveguide structure provided by the invention is at least used for solving the problems of low weight dynamic range and high dynamic power consumption in the nerve synapse.
Description
Technical Field
The invention relates to the field of silicon-based photonic integrated devices and neuromorphic chips, in particular to a neurosynaptic of a waveguide structure and a preparation method thereof.
Background
Because of the limitation of the von Neumann computing architecture, the computation and the storage cannot be carried out simultaneously in the computer, the computing efficiency and the energy consumption of the computer are severely limited by the architecture, and the human brain can process 10W of power with the consumption of 20W20The data volume of MAC/s is about 9 orders of magnitude higher than that of the current super computer, so people start to turn to the research on human brains. The human brain contains about 1011Biological neurons passing through 1015The links are connected into a system. Because the neurons are connected with each other through synapses, information is converted, weighted and transmitted among the synapses, and the synapses are the most important and most numerous components of the neurons, and the synapses have the advantages of high speed, low energy consumption, low crosstalk, expandability, high interconnection bandwidth and the like, the preparation of the optical synapses with low energy consumption is very necessary.
For optical nerve synapses, the preparation of optical nerve synapses and photoelectric nerve synapses is realized based on micro optical fibers and carbon nanotubes, respectively, and the optical nerve synapses and the photoelectric nerve synapses have the advantages of large bandwidth and no electrical interconnection loss, but simultaneously face the problems of difficult integration, speed limitation and the like.
The realization of optical neurosynaptic based on the structure of waveguide in combination with phase change material is gradually becoming a trend. However, in the existing optical nerve synapse, a structure of combining a ridge waveguide and a phase change material is adopted, and the interaction between the phase change material and a waveguide optical field is realized through the coupling of the phase change material and an evanescent field.
Disclosure of Invention
Technical problem to be solved
The invention provides a waveguide-structured neurosynaptic which is at least used for solving the problems of low extinction ratio, high dynamic power consumption and single-mode transmission.
(II) technical scheme
The embodiment of the invention provides a nerve synapse of a waveguide structure, which comprises: a ridge waveguide layer 1, a slit structure 2, a phase change material 3 and a flat waveguide layer 4; the slit structure 2 is arranged between the ridge waveguide layers 1 and is contacted with the ridge waveguide layers 1, and a groove structure 5 is formed between the slit structure 2 and the ridge waveguide layers 1; the phase change material 3 fills the groove structure 5, and the phase change material 3 is also arranged on the surfaces of the ridge waveguide layer 1 and the filled groove structure 5; the ridge waveguide layer 1 and the slit structure 2 are arranged above the flat waveguide layer 4, and the single-mode transmission of the waveguide can be realized by the structure formed by the ridge waveguide layer 1, the slit structure 2 and the flat waveguide layer 4.
Alternatively, the structure of the phase change material 3 includes: t-shaped structure.
Optionally, the neurosynaptic further comprises: a substrate 6, a waveguide isolation layer 7 and a protective layer 8; the substrate 6, the waveguide isolation layer 7 and the flat waveguide layer 4 are sequentially arranged in a contact manner; the ridge waveguide layer 1 and the slit structure 2 are arranged above the flat waveguide layer 4; the protective layer 8 is disposed over the phase change material 3.
Optionally, the ridge waveguide layer 1 has a thickness of 800nm or less and a width in the range of 0.4 μm to 2.8 μm.
Optionally, the thickness of the slit structure 2 is less than or equal to 800nm, and the width range is less than or equal to 200 nm.
Optionally, the thickness range of the phase change material 3 disposed on the surfaces of the ridge waveguide layer 1 and the filled trench structure 5 is less than or equal to 200 nm.
Optionally, the refractive index of the waveguide isolation layer 7 is smaller than the refractive index of the slab waveguide layer 4.
Optionally, the refractive index of the slab waveguide layer 4 ranges from 1.5 to 3.5.
The invention also provides a preparation method of the waveguide structure nerve synapse, which comprises the following steps: s1, preparing an overlay mark on the surface of the flat waveguide layer 4, and preparing a ridge waveguide layer 1 on the overlay mark; s2, preparing the slot structure 2 between the surface of the slab waveguide layer 4 and the ridge waveguide layer 1, so that a groove structure 5 is formed between the slot structure 2 and the ridge waveguide layer 1; s3, filling the slit structure 2 with the phase change material 3, and disposing the phase change material 3 on the surfaces of the ridge waveguide layer 1 and the filled trench structure 5.
Optionally, the method further comprises: s0, preparing the substrate 6, the waveguide isolation layer 7 and the flat waveguide layer 4 in sequence; and S4, preparing a protective layer 8 over the phase change material 3.
(III) advantageous effects
1. The phase change material is arranged in the ridge waveguide layer and the slit structure, so that the contrast of the high and low states of the optical transmission spectrum of the phase change material is improved, and the dynamic power consumption is reduced;
2. the refractive index of the waveguide isolation layer is smaller than that of the flat plate layer, and the interaction between the phase change material and the optical field can be enhanced by the phase change material with the T-shaped structure;
3. the phase change material is arranged in the ridge waveguide layer and the slit structure, so that single-mode transmission of the waveguide can be ensured through the ridge waveguide layer, the slit structure and the flat waveguide layer;
4. according to the phase-change material with the T-shaped structure, which is provided by the invention, the energy consumption of the optical nerve synapse can be reduced because the phase-change material with the T-shaped structure has a nonvolatile characteristic.
Drawings
FIG. 1 is a schematic diagram illustrating a configuration of a waveguide-structured neurosynaptic in an embodiment of the present invention;
FIG. 2 schematically illustrates a front view of a neurosynaptic waveguide structure in an embodiment of the present invention;
FIG. 3 is a flow chart of a method for fabricating a neurosynaptic waveguide structure according to an embodiment of the present invention.
Description of reference numerals: 1-a ridge waveguide layer; 2-a slit structure; 3-a phase change material; 4-a slab waveguide layer; 5-a groove structure; 6-a substrate; 7-a waveguide isolation layer; 8-protective layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
Referring to FIG. 1, FIG. 1 is a diagram schematically illustrating a structure of a waveguide-structured neurosynaptic according to an embodiment of the present invention. Wherein the neurosynaptic comprises: a ridge waveguide layer 1, a slit structure 2, a phase change material 3 and a flat waveguide layer 4; the ridge waveguide layer 1 and the slit structure 2 are arranged above the flat waveguide layer 4; the slit structure 2 is arranged between the ridge waveguide layers 1 and is contacted with the ridge waveguide layers 1, and a groove structure 5 is formed between the slit structure 2 and the ridge waveguide layers 1; the groove structure 5 is filled with the phase change material 3, and the phase change material 3 is also arranged on the surfaces of the ridge waveguide layer 1 and the filled groove structure 5.
In the embodiment of the present invention, the ridge waveguide layer 1 and the slit structure 2 are disposed above the flat waveguide layer 4, so that the structure formed by the ridge waveguide layer 1, the slit structure 2 and the flat waveguide layer 4 can implement single-mode transmission of the waveguide.
In the embodiment of the present invention, the depth of the phase change material 3 filling the groove structure 5 may be, for example, equal to the difference between the thickness of the ridge waveguide layer 1 and the thickness of the slit structure 2, so that after the phase change material 3 fills the groove structure 5, the ridge waveguide layer 1 and the filled groove structure 5 have a horizontal surface, and after a layer of the phase change material 3 is prepared on the horizontal surface, a phase change material 3 with a "T-shaped" structure is obtained, where the phase change material 3 with the "T-shaped" structure can increase the interaction between the phase change material 3 and the optical field.
In the embodiment of the present invention, the two waveguide layers in the ridge waveguide layer 1 have the same dimension, and the thickness of any one of the waveguide layers in the ridge waveguide layer 1 is less than or equal to 800nm, and the width range is 0.4 μm-2.8 μm; the thickness of the slit structure 2 is less than or equal to 800nm, and the width range is less than or equal to 200 nm; the thickness of the phase change material 3 arranged on the surfaces of the ridge waveguide layer 1 and the filled groove structure 5 is less than or equal to 200nm, so that the contrast of the optical transmission spectrum in a high-low transmission state is in a better range after the phase change material and the mode field interact.
More specifically, the material of the ridge waveguide layer 1 in the embodiment of the present invention may be selected from, for example, Si and Si3N4Or SiO2The preparation materials of the two waveguide layers of the waveguide layer 1 are the same; the material of the slit structure 2 may be selected from, for example, Si and Si3N4Or SiO2(ii) a The phase change material 3 may be prepared from GeTe or SbxTey、GexSbyTezThe material has the advantages of nonvolatility, high phase change speed, large optical coefficient change, high chemical stability, high cycle number and the like.
The neural synapse in an embodiment of the invention further comprises: a substrate 6, a waveguide isolation layer 7 and a protective layer 8; the substrate 6, the waveguide isolation layer 7 and the flat waveguide layer 4 are sequentially arranged in a contact manner; the ridge waveguide layer 1 and the slit structure 2 are arranged above the flat waveguide layer 4, and the protective layer 8 is arranged above the phase change material 3. In the above structure, the waveguide isolation layer 7 is used to isolate the influence of the outside on the waveguide light ground, and the protection layer 8 is used to prevent the phase change material 3 from being oxidized.
More specifically, the thickness of the waveguide isolation layer 7 may be, for example, in the range of 3 μm to 4 μm, which ensures waveguide single-mode transmission; the thickness range of the flat waveguide layer 4 can be, for example, more than 0 and less than 400nm, so that waveguide single-mode transmission is ensured; the thickness range of the protective layer 8 is 20nm-100nm, and the thickness ensures that the protective layer can protect the phase-change material on one hand and does not influence the interaction function of the phase-change material and the optical field on the other hand.
The waveguide isolation layer 7 may be made of silicon dioxide(ii) a The material for the preparation of the slab waveguide layer 4 may be chosen, for example, from Si, Si3N4Or SiO2(ii) a The material for preparing the protection layer 8 may be, for example, Indium Tin Oxide (ITO), which does not absorb light with a wavelength of 1550nm on the one hand and has good compactness on the other hand, so that the phase-change material is protected and the light transmission spectrum is not affected.
In the embodiment of the invention, a ridge structure can be formed among the ridge waveguide layer 1, the slit structure 2 and the flat waveguide layer 4, and the three are in mutual contact, the refractive index of the waveguide isolation layer 7 is smaller than that of the flat waveguide layer 4, and the refractive index range of the flat waveguide layer 4 is 1.5-3.5, so that the ridge structure can ensure that the waveguide realizes single-mode transmission, and can also ensure that after the phase change material 3 is filled in the groove structure 5 of the ridge structure, the interaction between an optical field and the phase change material 3 is enhanced, the optical transmission spectrum contrast of the phase change material 3 in different states is improved, and the technical effect of dynamic power consumption is reduced; different phase change materials 3 have different refractive indexes and absorption coefficients, and the phase change materials 3 have nonvolatile characteristics, so that the function of the low-energy optical nerve synapse can be realized.
More specifically, the technical effect of the ridge waveguide layer 1, the slit structure 2, the phase change material 3 and the slab waveguide layer 4 on realizing the interaction enhancement of the optical field and the phase change material 3 is realized by the following steps: the phase change material 3 is arranged in a groove structure 5 formed among the ridge waveguide layer 1, the slit structure 2 and the flat waveguide layer 4, a light source is input, so that an optical field is input into the nerve synapse from one end of the ridge waveguide layer 1, and the optical field interacts with the phase change material at the groove structure 5. Because the phase-change materials 3 in different states provided in the embodiment of the invention correspond to different refractive indexes and different refractive indexes correspond to different transmission spectrums, the groove structure 5 enhances the interaction between the optical field and the phase-change materials 3, and the contrast of the transmission spectrums is increased. It should be noted here that the high-low contrast of the transmission spectrum of the optical field corresponds to the dynamic range of the synapses with respect to weight.
In addition, the phase change mode of the phase change material in the embodiment of the present invention includes, but is not limited to, optical, electrical and thermal modes, the optical, electrical and thermal signals can be used as excitation signals to realize modulation of the optical transmission spectrum, and the modulation process is the same as the weighting process of biological nerve synapses on input signals, so as to achieve the function of the nerve synapses. The synapse has the advantages of miniaturization, miniaturization and integration.
The embodiment of the invention also provides a preparation method of the waveguide structure nerve synapse, which comprises the following steps:
s1, forming an alignment mark on the surface of the slab waveguide layer 4, and forming the ridge waveguide layer 1 on the alignment mark.
Because the neurosynaptic prepared in the embodiment of the invention has the characteristics of miniaturization, miniaturization and integration, a photoetching process is required to prepare a graphical overlay mark on the surface of the flat waveguide layer 4, wherein the overlay mark is prepared by depositing a titanium/gold alloy with the thickness of 200nm by a vacuum evaporation method, and then stripping the titanium/gold alloy by soaking the flat waveguide layer 4 with acetone to obtain the overlay mark.
S2, preparing the slot structure 2 between the surface of the slab waveguide layer 4 and the ridge waveguide layer 1, so that there is only one groove structure 5 between the slot structure 2 and the ridge waveguide layer 1.
The slit structure 2 is obtained by an Electron Beam Lithography (EBL) process and an Inductively Coupled Plasma etching (ICP). The thickness of the slit structure 2 is smaller than that of the ridge waveguide layer 1, and the slit structure 2 is arranged between the ridge waveguide layers 1 and is in contact with the ridge waveguide layers 1, so that only one groove structure 5 is arranged between the slit structure 2 and the ridge waveguide layers 1.
S3, filling the slit structure 2 with the phase change material 3, and disposing the phase change material 3 on the surfaces of the ridge waveguide layer 1 and the filled trench structure 5.
And then, preparing the phase change material 3 on the surfaces of the ridge waveguide layer 1 and the groove structure 5 filled with the phase change material 3 by using the sputtering process to obtain the phase change material 3 similar to a T-shaped structure.
The preparation method of the waveguide structure nerve synapse in the embodiment of the invention further comprises the following steps:
and S0, preparing the substrate 6, the waveguide isolation layer 7 and the flat waveguide layer 4 from bottom to top in sequence.
First, the substrate 6, which substrate 6 may be, for example, a silicon substrate, is cleaned. The cleaning method comprises the following steps: putting a silicon substrate into acetone, ultrasonically oscillating for 5min at 85% power, and then washing with excessive deionized water; then the silicon substrate is put into ethanol, and is subjected to ultrasonic oscillation for 5min at 85% power, and then is washed by excessive deionized water. The above two processes are repeated three times to obtain the cleaned substrate 6.
Second, in SiH4And N2Depositing a waveguide isolation layer 7 with a thickness of 3-4 μm on the cleaned substrate 6 by Plasma Enhanced Chemical Vapor Deposition (PECVD) in an atmosphere of growth gas, wherein the waveguide isolation layer 7 is made of SiO2The refractive index may be, for example, 1.45.
Then, the growth gas is SiH4And NH3In the environment of (2), Si is deposited on the waveguide isolation layer 7 by PECVD method to a thickness of, for example, 400nm3N4As the slab waveguide layer 4, the refractive index of the slab waveguide layer 4 may be 2, for example.
The preparation method of the waveguide structure nerve synapse provided by the embodiment of the invention further comprises the following steps:
s4, a protective layer 8 is prepared over the phase change material 3.
In the embodiment of the invention, the protective layer 8 is patterned by adopting a photoetching process, the protective layer 8 with the thickness of 50nm is prepared on the phase-change material 3 by adopting a sputtering process, and finally the protective layer 8 is stripped in an acetone soaking mode to obtain the protective layer 8.
In the method for manufacturing a waveguide-structure neurosynaptic, please refer to the above-mentioned structural embodiments for the dimensional parameters and material types of each structure during the manufacturing process, which are not described herein again.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A neurosynaptic of waveguide structure, comprising: the planar waveguide layer comprises a ridge waveguide layer (1), a slit structure (2), a phase change material (3), a planar waveguide layer (4), a groove structure (5), a substrate (6), a waveguide isolation layer (7) and a protective layer (8);
the ridge waveguide layer (1) and the slit structure (2) are arranged above the flat waveguide layer (4);
the slit structure (2) is arranged between the ridge waveguide layers (1) and is in contact with the ridge waveguide layers (1), and the groove structure (5) is formed between the slit structure (2) and the ridge waveguide layers (1); the groove structure (5) is filled with the phase change material (3), and the phase change material (3) is also arranged on the surfaces of the ridge waveguide layer (1) and the filled groove structure (5);
the substrate (6), the waveguide isolation layer (7) and the flat waveguide layer (4) are sequentially arranged in a contact manner; the protective layer (8) is arranged above the phase change material (3).
2. A neurosynaptic according to claim 1, wherein the structure of the phase change material (3) comprises: t-shaped structure.
3. A neurosynaptic according to claim 1, wherein the ridge waveguide layer (1) has a thickness of 800nm or less and a width in the range of 0.4-2.8 μm.
4. A neurosynaptic according to claim 1, wherein the slit structure (2) has a thickness of 800nm or less and a width in the range of 200nm or less.
5. A neurosynaptic according to claim 1, wherein the phase change material (3) provided on the surface of the ridge waveguide layer (1) and the filled trench structure (5) has a thickness in the range of 200nm or less.
6. A neurosynaptic according to claim 1, wherein the refractive index of the waveguide isolation layer (7) is less than the refractive index of the slab waveguide layer (4).
7. A synapse according to claim 1, wherein said slab waveguide layer (4) has a refractive index in the range of 1.5-3.5.
8. A method for preparing a waveguide structure synapse, comprising:
s0, preparing a substrate (6), a waveguide isolation layer (7) and a flat waveguide layer (4) in sequence;
s1, preparing an overlay mark on the surface of the slab waveguide layer (4), and preparing a ridge waveguide layer (1) on the overlay mark;
s2, preparing a slot structure (2) between the surface of the slab waveguide layer (4) and the ridge waveguide layer (1) with a groove structure (5) between the slot structure (2) and the ridge waveguide layer (1);
s3, filling the slit structure (2) with a phase change material (3), and arranging the phase change material (3) on the surfaces of the ridge waveguide layer (1) and the filled groove structure (5);
s4, preparing a protective layer (8) above the phase change material (3).
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| CN113723602A (en) * | 2021-09-01 | 2021-11-30 | 哈尔滨工程大学 | Nerve synapse scheme of optical fiber structure |
| CN115327703B (en) * | 2022-07-26 | 2024-03-19 | 华中科技大学 | Nonvolatile multistage adjustable photonic synapse device based on phase change material |
| CN115032819B (en) * | 2022-08-15 | 2022-11-08 | 之江实验室 | Co-packaged light engine system and silicon-based modulator for phase change material array thereof |
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| US10509244B1 (en) * | 2018-12-11 | 2019-12-17 | Globalfoundries Inc. | Optical switches and routers operated by phase-changing materials controlled by heaters |
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