CN107843957A - The heterogeneous integrated waveguide device architecture of silicon nitride lithium niobate and preparation method - Google Patents
The heterogeneous integrated waveguide device architecture of silicon nitride lithium niobate and preparation method Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
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Abstract
The present invention relates to a kind of heterogeneous integrated waveguide device architecture of silicon nitride lithium niobate and preparation method, the heterogeneous integrated ridge waveguide of LiNbO_3 film of silicon nitride waveguides and surface disposed thereon in coated with silica layer, and place traveling wave electrode in LiNbO_3 film upper surface.Silicon nitride waveguides and the LiNbO_3 film cross-couplings of its upper surface, the additional high-speed electrical signals on traveling wave electrode, are controlled to the phase of the light wave by LiNbO_3 film, and realization loads the Modulation and Amplitude Modulation of electric signal to the conversion of the phase-modulation of optical signal.Three-dimensional perpendicular Integrated design, make integrated chip more compact, save space, the insertion loss of fiber waveguide is reduced simultaneously, it is expected to realize 100G light modulation speed, realizes that light wave, by High Speed Modulation and the characteristic of via nitride silicon waveguide low-loss propagation, completes the light modulation of excellent performance in LiNbO_3 film.Its manufacture craft is compatible with semiconducter process, and modulation efficiency is high, and energy consumption is low, has important application prospect in the fields such as optical signal prosessing.
Description
Technical field
The present invention relates to a kind of high speed light modulation chip of optical communicating waveband, more particularly to a kind of silicon nitride-lithium niobate is different
Matter integrated waveguide device architecture and preparation method.
Background technology
With the arrival in big data epoch, communication network bandwidth and capacity scale quickly increase, and are believed based on existing traditional light
Number processing apparatus, not only bandwidth, speed run into bottleneck, the energy consumed also increased dramatically, thus be badly in need of developing ultrahigh speed
The new integrated opto-electronic device of low energy consumption.Wherein, optical modulator is multiple as optical information processing, spectral measurement, optical storage etc.
The core devices in field, have been developed a variety of devices based on effects such as electric light, acousto-optic, magneto-optics, and electrooptic modulator pass through it is outer
The amplitude or phase of the change regulation and control output light of added electric field, have certain advantage in power consumption, speed, integration etc., grind
Study carefully also the most extensive.
Lithium columbate crystal has larger nonlinear optical coefficients, while also has excellent Preset grating, piezoelectricity and acoustics
It characteristic, can be used as frequency-doubling crystal material again, there is good physical and mechanical properties, damage threshold is high, transparency range is wide, transmitance
High and material cost is relatively low, therefore the application in terms of optical modulator is the most ripe, currently also has other to can be used for integrating
The material of Electro-optical Modulation chip such as silicon-on-insulator material (SOI).But due to the nonlinear second-order optical susceptibility of silicon materials in itself
Very little, Electro-optical Modulation is difficult to realize, therefore often the optical property of material need to be modulated by the change of additional carrier concentration, and then
Realize light wave modulation, such as form the structure of p-i-n types by ion implanting, but this also result in waveguide transmission loss it is larger
And modulation efficiency is not high.For III-V group semi-conductor material, modulation efficiency is high, low in energy consumption, but exist its transmission loss it is larger,
The shortcomings that waveguide dispersion characteristic is whard to control, the laser-damaged threshold value of material is not also high.The surface plasma wave of metal material
It can also be used for realizing high speed light modulation, its integrated level is high, but there is the problems such as big is lost.Polymer modulator it is steady in a long-term
Property it is poor, its processing technology and CMOS technology are incompatible, are unfavorable for large-scale industrial production and integrated with electronic device.Cause
This integrated opto-electronic device based on niobic acid lithium material has obvious advantage in terms of High Speed Modulation, but straight to niobic acid lithium material
Tap into traveling wave and lead processing, technique realizes difficulty, and the loss of made lithium niobate waveguides is larger.Therefore put down based on low-loss waveguide
Heterogeneous integrate of platform and LiNbO_3 film attracts wide attention.And existing silicon nitride material can realize relatively low transmission damage
Consumption, there is infrared wide transmission spectrum (0.4-6.7 microns) from visible, almost completely covers lithium niobate passes through window
(0.35-4.5 microns), its refractive index (2.01) also approach with lithium niobate, the preparation of related integrated opto-electronic device and semiconductor
CMOS technology is compatible, and transmission loss is low, and does not observe obvious Nonlinear optical absorption also experimentally at present.Based on nitridation
The linearity and non-linearity integrated optical device of silicon materials, it has also become the study hotspot in field.High vertical coupled efficiency, low intersection damage
The three-dimensional silicon nitride coupled apparatus of consumption is also studied.
With the development of silicon nitride three-dimensional integration technology, heterogeneous integrate of silicon nitride and LiNbO_3 film also begins to occur.
University of California L.Chang et al. realizes silicon nitride waveguides recently and the heterogeneous of lithium niobate integrates.Pass through niobium on insulator
Sour lithium thin film sputtering grown silicon nitride film, realizes low-loss ridged waveguide structure【First technology 1：L.Chang,et al.,
J.Opt,2016,3(5):531-535】, the processing method of chemically mechanical polishing is selected in manufacturing process makes silicon nitride waveguides surface
Planarization, it is heterogeneous integrated with lithium niobate to realize.It is but existing to carry out surface planarisation processing using chemically mechanical polishing
Integrated technology so that silicon nitride material is easily cracked due to the change of membrane stress, and polishing process is difficult to monitor in real time, with half
Conductor processing technology is not compatible.So needing to prepare strain relief using the method for secondary photoetching, limit extensive
Batch production.The domestic integrated opto-electronic device based on lithium niobate also conducts extensive research simultaneously, including lithium niobate is thin
The growth of membrane material【First technology 2：Cui Jiao etc., artificial lens journal, 2016,45 (5):1266-1270】, device prepare and phase
Application of linearity and non-linearity optics aspect etc. is closed, but is gone back in the heterogeneous integrated aspect concern of low-loss waveguide and niobic acid lithium material
Seldom, so far, also nobody is given on silicon nitride waveguides substrate and lithium niobate material for 1550 nano optical communication wave bands
The heterogeneous integrated structure design and realization means of material.
The content of the invention
The problem of existing the present invention be directed to the heterogeneous Integrated design application of low-loss waveguide platform and LiNbO_3 film, carries
A kind of heterogeneous integrated waveguide device architecture of silicon nitride-lithium niobate and preparation method are gone out, the wave of silicon nitride in silica clad
Lead with the heterogeneous integrated ridge waveguide of the LiNbO_3 film on surface disposed thereon, and LiNbO_3 film upper surface place traveling wave electricity
Pole.Silicon nitride waveguides and the LiNbO_3 film cross-couplings of its upper surface are right by the additional high-speed electrical signals on traveling wave electrode
It is controlled by the phase of the light wave of lithium niobate waveguides, realization loads the Modulation and Amplitude Modulation of electric signal to the phase-modulation of optical signal
Conversion.Three-dimensional integrated device is compact-sized, and manufacture craft is compatible with semiconducter process, and modulation efficiency is high, and energy consumption is low, can
High-volume low cost production, has important application prospect in the fields such as optical signal prosessing.
The technical scheme is that：A kind of heterogeneous integrated waveguide device architecture of silicon nitride-lithium niobate, on silicon materials surface
Silica is deposited, is the silicon nitride waveguides for depositing and being etched on silica, by silica bag around silicon nitride waveguides
Cover, then it is upper have one layer of LiNbO_3 film, silicon nitride waveguides in coated with silica layer and positioned at silicon nitride waveguides upper surface
LiNbO_3 film it is heterogeneous be integrated to form ridge waveguide, finally using photoetching, peel off technical matters, the nitrogen on LiNbO_3 film
Above SiClx waveguide prepared by both sides two traveling wave electrodes.
The silicon nitride waveguides are thick 350 nanometers, and LiNbO_3 film is thick 400 nanometers.
The heterogeneous integrated waveguide device architecture preparation method of silicon nitride-lithium niobate, comprises the following steps：
1) silica is deposited on silicon materials surface, then after deposited silicon nitride, based on beamwriter lithography, plasma
The techniques such as etching, prepare plane silicon nitride waveguides；
2) coated with silica layer is covered by chemical vapor deposition；
3) optimize photoresist stoving process, one layer of photoresist is uniformly coated on coated with silica layer；
4) plasma etch process so that the etching speed of photoresist and the etching speed of silica are essentially equal,
To being uniformly coated with one layer of photoresist above coated with silica layer, plasma etching is carried out, etching depth is monitored in real time, is carving
Stop etching when losing silicon nitride waveguide layer, now can obtain the flat silicon nitride waveguides in surface；
5) the wafer bonding technology based on optimization, the jail of the LiNbO_3 film substrate and silicon nitride waveguides on insulator is realized
Gu bonding, LiNbO_3 film substrate surface have silicon substrate and silica cushion；
6) mode of mask lithography is utilized, the technique based on wet etching removes the silicon substrate on LiNbO_3 film substrate；
7) silicon cushion is removed using wet corrosion technique；
8) traveling wave electrode is prepared on LiNbO_3 film substrate：LiNbO_3 film substrate surface plate clad, so as to
Silicon nitride waveguides top prepares stable state coordination electrode, and the clad on traveling wave electrode surface is finally removed using photoetching, lithographic technique
Material, photoelectricity control manipulation is carried out to expose traveling wave electrode.
The beneficial effects of the present invention are：The heterogeneous integrated waveguide device architecture of silicon nitride-lithium niobate of the present invention and preparation side
Method, based on heterogeneous integrated LiNbO_3 film structure in silicon nitride waveguides, the low transmission of silicon nitride waveguides can be made full use of to be lost
With the high non-linearity optical coefficient of niobic acid lithium material, it is expected to realize 100G high speed low-loss optically modulation chip.Used in preparation
The handling process of plasma etching, realization is efficient heterogeneous integrated with lithium niobate thin-film materials, for lithium niobate integrated optical from now on
The development of electrical part provides strong platform guarantee.This programme is based on the function to the heterogeneous integrated morphology of silicon nitride-lithium niobate
Chip development, the electrooptical switching modulation and the XOR computing of automatically controlled signal of high speed are explored, designs High Extinction Ratio, low damage
The switch interference structure of consumption, the new application direction of low energy consumption lithium niobate integrated waveguide chip is expanded, to be integrated based on lithium niobate
The nonlinear optics correlative study of device provides solid experiment support.
Brief description of the drawings
Fig. 1 is the wave of silicon nitride guide structure sectional drawing of the heterogeneous integrated LiNbO_3 film of the present invention；
Fig. 2 is ridge waveguide schematic perspective view in the silicon nitride waveguides of the heterogeneous integrated LiNbO_3 film of the present invention；
Fig. 3 is calculated for the present invention based on the heterogeneous integrated high speed light modulation chip of silicon nitride and lithium niobate with Fdtd Method
The mode field figure of method emulation；
Fig. 4 by fettered in LiNbO_3 film in the silicon nitride waveguides of the heterogeneous integrated LiNbO_3 film of the present invention light ratio with
The curve map that silicon nitride waveguides width changes；
Fig. 5 is the silicon nitride waveguides Making programme figure of the heterogeneous integrated LiNbO_3 film of the present invention.
Embodiment
The wave of silicon nitride guide structure sectional drawing of heterogeneous integrated LiNbO_3 film as shown in Figure 1, is deposited on silicon materials surface
Silica, 350 nanometer thickness silicon nitride waveguides in coated with silica layer then are obtained through etching after deposited silicon nitride, nitrogenized
By coated with silica, then the nanometer thickness LiNbO_3 film of attached last layer 400 around silicon waveguide, photoetching, the skill peeled off finally are utilized
Art technique, both sides prepare two traveling wave electrodes above silicon nitride waveguides on LiNbO_3 film；Heterogeneous integrated niobic acid as shown in Figure 2
Ridge waveguide schematic perspective view in the silicon nitride waveguides of lithium film.As Fig. 3 describes to be based on silicon nitride and the heterogeneous collection of lithium niobate
Into the mode field figure that is emulated with Finite Difference Time Domain of high speed light modulation chip, it is light wave at the middle and upper levels in lithium niobate
Modulated content, 0.43 or so light modulation is can reach at 0.5 micron of waveguide broad-band, lower floor is the biography in silicon nitride waveguides
Defeated amount of beam, what is provided in figure is the mode field figure of 2 microns of wide silicon nitride waveguides, while is presented in Fig. 4 silicon nitride waveguides
The width confinement factor figure of light wave in lithium niobate in 0.5 to 4 micrometer ranges.As shown in figure 5, the side being bonded by wafer
Method, optimize the parameter such as pressure, temperature and vacuum in bonding process, realize efficient heterogeneous integrated.In order to realize and niobium
The heterogeneous of sour lithium film integrates, and need to carry out surface planarisation processing to the silicon nitride waveguides for covering coated with silica layer.It is existing
Method of some based on chemically mechanical polishing needs to carry out hyperfine control so that silicon nitride waveguides are exposed just, so as to
Lithium niobate is integrated.Due to being difficult to that polishing process is monitored in real time, difficulty of processing is larger.But by optimizing photoresist
The parameter setting of stoving process and plasma etching, the etching speed of photoresist and the etching speed of silica can make it that
Spend completely the same.And the bulge-structure of waveguide after photoresist, can obtain the glue plane of relatively flat on even.Plasma
In etching process, the surface of waveguide substrate can uniformly be etched away, with reference to real time monitoring apparatus, when reaching silicon nitride waveguide layer
Stop etching.The silicon substrate and oxidation silicon buffer layer on lithium niobate surface are fallen in final etching, pass through photoetching, the technical matters system peeled off
Standby traveling wave electrode.
The heterogeneous integrated waveguide device preparation method of silicon nitride-lithium niobate involved in the present invention specifically comprises the following steps：
1) silica is deposited on silicon materials surface, then after deposited silicon nitride, based on beamwriter lithography, plasma
The techniques such as etching, prepare plane silicon nitride waveguides；
2) coated with silica layer is covered by chemical vapor deposition；
3) optimize photoresist stoving process, one layer of photoresist is uniformly coated on coated with silica layer；
4) plasma etch process so that the etching speed of photoresist and the etching speed of silica are essentially equal,
To being uniformly coated with one layer of photoresist above coated with silica layer, plasma etching is carried out, etching depth is monitored in real time, is carving
Stop etching when losing silicon nitride waveguide layer, now can obtain the flat silicon nitride waveguides in surface；
5) the wafer bonding technology based on optimization, the jail of the LiNbO_3 film substrate and silicon nitride waveguides on insulator is realized
Gu bonding, LiNbO_3 film substrate surface has silicon substrate and oxidation silicon buffer layer；
6) mode of mask lithography is utilized, the technique based on wet etching removes the silicon substrate on LiNbO_3 film substrate；
7) silicon cushion is removed using wet corrosion technique；
8) using photoetching, the technical matters peeled off, traveling wave electrode is prepared on LiNbO_3 film substrate.Further heterogeneous
Clad is plated on integral substrate surface, to prepare stable state coordination electrode on silicon nitride waveguides top.Finally utilize photoetching, etching skill
Art removes the coating layer material on traveling wave electrode surface, and photoelectricity control manipulation is carried out to expose traveling wave electrode.Finally chip is carried out
The sample preparation processing such as cutting, polishing.
This programme is the high speed light modulation chip based on silicon nitride waveguides platform Yu the heterogeneous integrated morphology of LiNbO_3 film.Its
Architectural feature is the silicon nitride waveguides in coated with silica layer and the LiNbO_3 film positioned at silicon nitride waveguides upper surface
(LNOI) it is heterogeneous to be integrated to form ridge waveguide, and place traveling wave electrode in LiNbO_3 film upper surface.Lithium columbate crystal have compared with
Big nonlinear optical coefficients, while also there is excellent Preset grating, piezoelectricity and acoustic characteristic, the application in terms of optical modulator
It is the most ripe, but waveguide processing is directly carried out to niobic acid lithium material, technique realizes difficulty, and made lithium niobate waveguides are lost
It is larger.And silicon nitride this silica-base material has infrared wide transmission spectrum from visible, its refractive index also approaches with lithium niobate,
Transmission loss is low, and the making of silicon nitride waveguides is compatible with CMOS technology.This programme combines the advantages of two kinds of materials, passes through wafer
The heterogeneous integrated silicon nitride waveguides of method of bonding realize the low-loss optical modulator chip of high speed with LiNbO_3 film.In view of nitrogen
SiClx is blocked up to cause film to be cracked due to the accumulation of material internal membrane stress, excessively thin to cause communication mode is excessive to be leaked to
In lithium niobate, it is difficult to form ridge waveguide.LiNbO_3 film is excessively thin can not to make full use of its excellent optical modulation property, otherwise mistake
Thickness equally is difficult to form ridge waveguide, final to determine that silicon nitride waveguides are thick by both thickness of Finite Difference Time Domain optimization
350 nanometers, LiNbO_3 film is thick 400 nanometers.The wafer bonding technology of optimization is then based on, realizes that the lithium niobate on insulator is thin
The secure bond of film substrate and silicon nitride waveguides, finally using photoetching, the technical matters peeled off, row is prepared on lithium niobate substrate
Wave electrode.This programme takes full advantage of low-loss of the niobic acid lithium material to excellent the electro-optical modulation characteristic and silicon nitride waveguides of light wave
Transmission characteristic, realize the low-loss optical modulator chip of high speed.
Claims (3)
1. a kind of heterogeneous integrated waveguide device architecture of silicon nitride-lithium niobate, it is characterised in that silicon materials deposit titanium dioxide on surface
Silicon, be the silicon nitride waveguides for depositing and being etched on silica, by coated with silica around silicon nitride waveguides, then on have
One layer of LiNbO_3 film, the silicon nitride waveguides in coated with silica layer and the LiNbO_3 film positioned at silicon nitride waveguides upper surface
It is heterogeneous to be integrated to form ridge waveguide, finally using photoetching, peel off technical matters, on LiNbO_3 film above silicon nitride waveguides
Prepared by both sides have two traveling wave electrodes.
2. the heterogeneous integrated waveguide device architecture of silicon nitride-lithium niobate according to claim 1, it is characterised in that the nitridation
Silicon waveguide is thick 350 nanometers, and LiNbO_3 film is thick 400 nanometers.
3. the heterogeneous integrated waveguide device architecture preparation method of silicon nitride-lithium niobate according to claim 1 or claim 2, its feature exist
In comprising the following steps：
1）Silica is deposited on silicon materials surface, then after deposited silicon nitride, based on beamwriter lithography, plasma etching
Etc. technique, plane silicon nitride waveguides are prepared；
2）Coated with silica layer is covered by chemical vapor deposition；
3）Optimize photoresist stoving process, one layer of photoresist is uniformly coated on coated with silica layer；
4）Plasma etch process so that the etching speed of photoresist and the etching speed of silica are essentially equal, to two
One layer of photoresist is uniformly coated with above silica clad, plasma etching is carried out, monitors etching depth in real time, etching into
Stop etching during silicon nitride waveguide layer, now can obtain the flat silicon nitride waveguides in surface；
5）Wafer bonding technology based on optimization, realize the firm key of the LiNbO_3 film substrate and silicon nitride waveguides on insulator
Close, LiNbO_3 film substrate surface has silicon substrate and oxidation silicon buffer layer；
6）Using the mode of mask lithography, the technique based on wet etching removes the silicon substrate on LiNbO_3 film substrate；
7）Silicon cushion is removed using wet corrosion technique；
8）Traveling wave electrode is prepared on LiNbO_3 film substrate：Clad is plated in LiNbO_3 film substrate surface, to nitrogenize
Silicon waveguide top prepares stable state coordination electrode, and the coating layer material on traveling wave electrode surface is finally removed using photoetching, lithographic technique,
Photoelectricity control manipulation is carried out to expose traveling wave electrode.
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