CN108732795A - A kind of silicon substrate lithium niobate high-speed optical modulator and preparation method thereof - Google Patents
A kind of silicon substrate lithium niobate high-speed optical modulator and preparation method thereof Download PDFInfo
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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Abstract
The invention discloses a kind of silicon substrate lithium niobate high-speed optical modulators and preparation method thereof, and modulator includes：Silicon substrate wafer, silica under-clad layer, LiNbO_3 film, optical waveguide, metal electrode, silicon V-shaped, coupling optical fiber, silica under-clad layer are located at the upper surface of silicon substrate wafer；LiNbO_3 film is located on silica under-clad layer.Beneficial effects of the present invention are：(1) lithium niobate monocrystal crystal is realized to integrate with the heterogeneous of silicon single crystal crystal；(2) characteristics such as the low-k of the filming of lithium niobate crystal chip and silica under-clad layer, low-dielectric loss, it can be achieved that the modulation rate (or modulation bandwidth) of lithium niobate optical modulator promotion；(3) high-insulativity of the filming of lithium niobate crystal chip and silica under-clad layer, it can be achieved that the microwave electromagnetic field intensity being distributed in LiNbO_3 film increase, improve electric field to the modulation efficiency of light field, reduce the driving voltage of device.
Description
Technical field
The invention belongs to technical field of photo communication, more particularly to a kind of silicon substrate lithium niobate high-speed optical modulator and its preparation
Method.
Background technology
In recent years, as optical communication technique is in traditional businesses such as broadband network, mobile communication, financial transaction, data centers
And the extensive use of the emerging services such as cloud computing, big data, 5G communications, traditional technology is in the rate of communication, capacity, time delay etc.
Aspect has been difficult to meet the needs of people's daily life.Therefore, common carrier is adopted in the framework of optical-fiber network more and more
With coherent processing technique with realize high-speed, large capacity, low time delay, low energy consumption optical transport network establishment.
In coherent processing technique scheme, high-speed optical modulator is the core devices of coherent optical communication system, multiple high speeds
The parallel connection of optical modulator (MZ optical modulators) and the use of cross-polarization multiplexing technology are to realize 100G/400G fiber optic communications
The key point of system.The features such as lithium niobate optical modulator is with its low-loss, high bandwidth, performance stabilization, High Extinction Ratio, becomes mesh
The most widely used optical modulator in the mainstream selection of preceding commercialization high-speed optical modulator and coherent optical communication system.
Current coherent optical communication system to the index requests such as the volume of optical module and power consumption realize it is further reduce or
It reduces, and the problem of existing lithium niobate high-speed optical modulator has been primarily present following several respects：
(1) the lower Electro-optical Modulation efficiency of existing lithium niobate high-speed optical modulator makes the driving voltage of device higher, special
It is not when multiple MZ modulators carry out parallel connection to build the relevant optical modulators such as PM-QPSK, the driving voltage of device then can be big
Increase to width；
(2) existing lithium niobate high-speed optical modulator is had to by increasing traveling wave electrode length to reduce the driving electricity of device
Pressure, but this undoubtedly increases the volume of device；
(3) lithium columbate crystal is difficult to be prepared in the semiconductor dies on piece such as GaAs or silicon by coating technique so that niobic acid
The structures such as lithium and laser, optical detector are difficult to realize heterogeneous integrated or single-chip integration.
In order to meet need of the fields such as data center, coherent light communication to low-power consumption, small size, high performance optical module
It asks, more research and development strengths are put into the new skill such as indium phosphide optical modulator and silicon light modulators by high-speed optical modulator manufacturer one after another
Art, to realize optical modulator and laser, the list of the single-chip integration of detector or optical modulator and silicon substrate large scale integrated circuit
Piece is integrated.However, the high cost and temperature sensitivity of indium phosphide optical modulator, silicon light modulators nonlinear electrooptic effect and
The problems such as 60GHz modulation bandwidth theory upper limits, also limit the extensive use of both novel light modulator technologies.
Invention content
The present invention proposes a kind of silicon substrate lithium niobate high-speed optical modulator and preparation method thereof, to realize following three mesh
's：
(1) use bonding techniques that lithium columbate crystal is bonded on silica-on-silicon substrates chip to realize low damage
The hybrid integrated of the lithium niobate optical modulator and silicon substrate large scale integrated circuit of consumption, high bandwidth, high stability；
(2) by by lithium niobate crystal chip filming, and the low of silicon dioxide layer in silica-on-silicon substrates chip is combined
The features such as dielectric constant, low-dielectric loss, realizes the promotion of the modulation rate (or modulation bandwidth) of lithium niobate optical modulator, without
Same message capacity can be realized using the labyrinth of existing relevant optical modulator, the driving voltage of device is greatly reduced；
(3) filming of silicon dioxide layer higher insulating properties and lithium niobate crystal chip is utilized, it is thin that realization is distributed in lithium niobate
The increase of microwave electromagnetic field intensity in film improves electric field to the modulation efficiency of light field, reduces the driving voltage of device.
To achieve the purpose of the present invention, the present invention provides a kind of silicon substrate lithium niobate high-speed optical modulators, including：Silicon base
Chip 1, silica under-clad layer 2, LiNbO_3 film 3, optical waveguide 4, metal electrode, silicon V-shaped 6, coupling optical fiber 7,
The silicon substrate wafer 1 is using the silicon single crystal wafer of [100] crystal orientation, and thickness is in 0.1mm to 2mm；
The silica under-clad layer 2 is located at the upper surface of silicon substrate wafer 1, the thickness of the silica under-clad layer 2
At 1 μm to 30 μm；
The LiNbO_3 film 3 is located on silica under-clad layer 2, and the crystal orientation of LiNbO_3 film 3 is that X cuts Y biographies or X is cut
Z is passed, and thickness is at 1 μm to 20 μm；
The optical waveguide 4 is titanium diffused waveguide or annealed protonexchanged waveguides, is vertical bar shaped waveguiding structure or MZ waveguides
Structure, the optical waveguide 4 are made in LiNbO_3 film 3, and duct width is at 1 μm to 10 μm, and waveguide depth is at 1 μm to 10 μ
m；
The metal electrode includes signal electrode 5-1 and ground electrode 5-2, is made in 3 upper surface of LiNbO_3 film, and thickness exists
1 μm to 30 μm, the metal electrode is used as electrode material using gold；
Described silicon V-shaped 6 use the single crystal silicon material of [100] crystal orientation, for placing coupling optical fiber 7；
The coupling optical fiber 7 is single mode optical fiber or single-mode polarization maintaining fiber, is placed in silicon V-shaped 6.
The preparation method of above-mentioned silicon substrate lithium niobate high-speed optical modulator is prepared the present invention also provides a kind of, including is made as follows
Standby step：
The first step：In 1 upper surface of silicon substrate wafer, using thermal oxidation technology or using ion sputtering, magnetron sputtering
Any coating technique of technology, chemical vapour deposition technique prepares layer of silicon dioxide under-clad layer 2, forms silicon based silicon dioxide base
Bottom chip；
Second step：Lithium niobate monocrystal chip is bonded with silica-on-silicon substrates chip；
Third walks：Using fine gtinding polishing process, lithium niobate monocrystal chip is thinned, forms LiNbO_3 film 3；
4th step：In 3 upper surface of LiNbO_3 film, using photoetching and coating process, preparation forms annealed proton and exchanges light
Learn the chromium film pattern or silica film pattern needed for waveguide；
5th step：Using annealed proton exchange process, annealed proton is prepared in LiNbO_3 film 3 and exchanges optical waveguide；
6th step：Using wet corrosion technique, by the chromium film pattern or silica film pattern of 3 upper surface of LiNbO_3 film
It erodes；
7th step：In 3 upper surface of LiNbO_3 film, using photoetching and coating process, preparation forms travelling wave electric pole structure institute
The titanium film or chromium gold film figure needed；
8th step：Using thick resist lithography technique, the thick photoresist mask structure needed for traveling wave electrode plating is prepared；
9th step：The chip prepared to step 8 using step 1 is immersed in gold plating bath, traveling wave electrode institute is prepared
The thick electrode structure needed；
Tenth step：In waveguide wafer end face point ultraviolet glue, by silicon V-shaped 6 with single mode optical fiber or single-mode polarization maintaining fiber
It is carried out with waveguide wafer end face be bonded, solidification is exposed to ultraviolet glue.
The present invention also provides the preparation methods that another prepares above-mentioned silicon substrate lithium niobate high-speed optical modulator, including such as
Lower preparation process：
The first step：In silicon substrate wafer (1) upper surface, splashed using thermal oxidation technology or using ion sputtering, magnetic control
Any coating technique of technology, chemical vapour deposition technique is penetrated, layer of silicon dioxide under-clad layer (2) is prepared, forms silicon substrate titanium dioxide
Silicon substrate wafer；
Second step：Lithium niobate monocrystal upper wafer surface, using photoetching and coating process, preparation forms titanium diffusion optical waveguide
Required titanium film figure；
Third walks：Using titanium diffusion technique, titanium diffusion optical waveguide is prepared in lithium niobate monocrystal chip；
4th step：To be formed with titanium spread lithium niobate monocrystal chip and the silica-on-silicon substrates chip of optical waveguide into
Line unit closes；
5th step：Using fine gtinding polishing process, lithium niobate monocrystal chip is thinned, forms LiNbO_3 film；
6th step：In LiNbO_3 film (3) upper surface, using photoetching and coating process, preparation forms travelling wave electric pole structure
Required titanium film or chromium gold film figure；
7th step：Using thick resist lithography technique, the thick photoresist mask structure needed for traveling wave electrode plating is prepared；
8th step：The chip prepared using step 1 to seven is immersed in gold plating bath, is prepared needed for traveling wave electrode
Thick electrode structure；
9th step：In waveguide wafer end face point ultraviolet glue, by with single mode optical fiber or single-mode polarization maintaining fiber it is silicon V-shaped with
Waveguide wafer end face is bonded, and solidification is exposed to ultraviolet glue.
6. advantageous effect
Compared with prior art, beneficial effects of the present invention are：
(1) it realizes lithium niobate monocrystal crystal to integrate with the heterogeneous of silicon single crystal crystal, by the low damage of lithium niobate optical modulator
The features such as consumption, high bandwidth, high stability and silicon single crystal be easy to make large scale integrated circuit structure advantage carried out it is good
In conjunction with；
(2) spies such as the low-k of the filming of lithium niobate crystal chip and silica under-clad layer, low-dielectric loss
Property, it can be achieved that the modulation rate (or modulation bandwidth) of lithium niobate optical modulator promotion, without use existing relevant optical modulator
Labyrinth same message capacity can be realized, the driving voltage of device is greatly reduced；
(3) high-insulativity of the filming of lithium niobate crystal chip and silica under-clad layer is, it can be achieved that be distributed in lithium niobate
The increase of microwave electromagnetic field intensity in film improves electric field to the modulation efficiency of light field, reduces the driving voltage of device.
Description of the drawings
The chip structure of Fig. 1, silicon substrate lithium niobate high-speed optical modulator embodiment 1 proposed by the present invention and embodiment 2 are illustrated
Figure；
The chip profile schematic diagram of Fig. 2, silicon substrate lithium niobate high-speed optical modulator embodiment 1 proposed by the present invention；
The chip profile schematic diagram of Fig. 3, silicon substrate lithium niobate high-speed optical modulator embodiment 2 proposed by the present invention；
The chip structure of Fig. 4, silicon substrate lithium niobate high-speed optical modulator embodiment 3 proposed by the present invention and embodiment 4 are illustrated
Figure；
The chip profile schematic diagram of Fig. 5, silicon substrate lithium niobate high-speed optical modulator embodiment 3 proposed by the present invention；
The chip profile schematic diagram of Fig. 6, silicon substrate lithium niobate high-speed optical modulator embodiment 4 proposed by the present invention；
In figure, the title corresponding to each label is respectively：1. base wafer；2. silica under-clad layer；3. lithium niobate
Film；4. optical waveguide；4-1. input waveguide；4-2.Y branched structure waveguides；4-3. both arms waveguides；4-4. output waveguide；5-1.
Signal electrode；5-2. ground electrode；6. silicon V-shaped；7. coupling optical fiber.
Specific implementation mode
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that described herein
Specific embodiment be only used to explain the present invention, be not intended to limit the present invention.
It should be noted that " connection " described herein and the word for expressing " connection ", as " being connected ",
" connected " etc. was both directly connected to another component including a certain component, and also passed through other component and another portion including a certain component
Part is connected.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.
Embodiment 1
As depicted in figs. 1 and 2, a kind of silicon substrate lithium niobate high-speed optical modulator described in the present embodiment, including：Silicon base is brilliant
Piece 1, silica under-clad layer 2, LiNbO_3 film 3, optical waveguide 4, metal electrode 5, signal electrode 5-1, ground electrode 5-2, silicon V
Shape slot 6 couples optical fiber 7, and the silicon substrate lithium niobate high-speed optical modulator described in the present embodiment is phase-modulator, and Fig. 1 show silicon
The structural schematic diagram of base lithium niobate high-speed optical modulator, Fig. 2 show the chip cross section of silicon substrate lithium niobate high-speed optical modulator
Schematic diagram.
Silicon substrate wafer 1 is using [100] crystal orientation, the silicon single crystal wafer of low-resistivity, and thickness is in 0.1mm to 2mm.Silicon base
The crystal orientation of chip 1 keeps the crystal orientation with silicon V-shaped 6 to be consistent, with realize silicon substrate lithium niobate optical modulator chip with it is silicon V-shaped
The identical expansion within the scope of total temperature between 6.
Silica under-clad layer 2 is located at the upper surface of silicon substrate wafer 1, and thermal oxidation technology can be used in silicon substrate wafer 1
Upper surface formed layer of silicon dioxide film layer, or using ion sputtering, magnetron sputtering technique, chemical vapour deposition technique
It is prepared in the upper surface of silicon substrate wafer 1 etc. any technology of preparing, thickness is at 10 μm to 30 μm.Silica under-clad layer 2
Utilize the low-k (ε~4) of earth silicon material, low tangent loss (δ~6 × 10-5@10GHz), it can effectively realize
The promotion of the modulation rate (or modulation bandwidth) of lithium niobate optical modulator.In addition, silica under-clad layer 2 utilizes silica material
The high-insulativity or high resistivity (10 of material16Ω cm), the promotion for the electric field strength being distributed in LiNbO_3 film 3 may be implemented,
Electro-optical Modulation efficiency is improved, the driving voltage of device is effectively reduced.
LiNbO_3 film 3 is located on silica under-clad layer 2, by by optical grade lithium niobate monocrystal bonding chip in two
It on silica under-clad layer 2 and carries out fine gtinding polishing and is made, the crystal orientation of LiNbO_3 film 3 is that X cuts that Y is passed or X cuts Z biographies, thickness
At 1 μm to 20 μm.The technology being combined is polished with fine gtinding using bonding, the monocrystalline attribute of lithium niobate crystal chip can be kept,
Overcome lattice defect existing for the LiNbO_3 film made of the coating techniques such as MBE, magnetron sputtering is larger, electro-optic coefficient compared with
It is low, the problems such as micron order thickness can not be prepared.
Optical waveguide 4 is that the annealed proton of vertical bar shaped exchanges optical waveguide, is made in LiNbO_3 film, duct width exists
1 μm to 10 μm, waveguide depth is at 1 μm to 10 μm.
Metal electrode 5 uses travelling-wave-type electrode structure, is made of, is placed in a signal electrode 5-1 and a ground electrode 5-2
The arranged on left and right sides of optical waveguide.Metal electrode 5 is made in the upper surface of LiNbO_3 film 3, and electrode material is used as using gold, thick
Degree is at 1 μm to 30 μm.For increase gold LiNbO_3 film between adhesion strength, before preparing golden film, in LiNbO_3 film
Upper surface first prepares one layer of titanium film or chromium film, and thickness, to 200nm, and makes needed for metal electrode 5 on this basis in 10nm
Golden film, to form titanium electrode or cr-au electrode.
Silicon V-shaped 6 use the single crystal silicon material of [100] crystal orientation, are made by conventional silicon wet corrosion technique, for putting
Set coupling optical fiber 7.Silicon V-shaped 6 have crystal orientation identical with silicon substrate wafer 1, therefore also thermal expansion properties having the same, can
Avoid within the scope of total temperature (- 45 DEG C to 75 DEG C) due to V-shaped groove material and the inconsistent caused output light of base wafer material
The variation of power.
It is single mode optical fiber or single-mode polarization maintaining fiber to couple optical fiber 7, is placed in silicon V-shaped 6.
To prepare above-mentioned silicon substrate lithium niobate high-speed optical modulator, a kind of silicon substrate lithium niobate high-speed light tune is present embodiments provided
The preparation method of device processed includes the following steps：
(1) in the upper surface of silicon substrate wafer 1, using thermal oxidation technology or using ion sputtering, magnetron sputtering skill
Any coating technique such as art, chemical vapour deposition technique prepares layer of silicon dioxide under-clad layer 2, forms silicon based silicon dioxide base
Bottom chip 1；
(2) lithium niobate monocrystal chip is bonded with silica-on-silicon substrates chip 1；
(3) fine gtinding polishing process is used, lithium niobate monocrystal chip is thinned, forms LiNbO_3 film 3；
(4) in the upper surface of LiNbO_3 film 3, using photoetching and coating process, preparation forms annealed proton and exchanges optics
Chromium film pattern needed for waveguide 4 or silica film pattern；
(5) annealed proton exchange process is used, annealed proton is prepared in LiNbO_3 film 3 and exchanges optical waveguide 4；
(6) wet corrosion technique is used, the chromium film pattern of 3 upper surface of LiNbO_3 film or silica film pattern are corroded
Fall；
(7) in the upper surface of LiNbO_3 film 3, using photoetching and coating process, preparation formed travelling wave electric pole structure 5-1 and
Titanium film needed for 5-2 or chromium gold film figure；
(8) thick resist lithography technique is used, the thick photoresist mask structure needed for traveling wave electrode 5-1 and 5-2 plating is prepared；
(9) chip prepared using step (1)-(8) is immersed in gold plating bath, prepares traveling wave electrode 5-1 and 5-2 institutes
The thick electrode structure needed；
(10) in waveguide wafer end face point ultraviolet glue, by with coupling optical fiber 7 silicon V-shaped 6 with waveguide wafer end face into
Row bonding, solidification is exposed to ultraviolet glue.
Embodiment 2
As shown in figures 1 and 3, silicon substrate lithium niobate high-speed optical modulator described in the present embodiment and embodiment 1 difference lies in,
The optical waveguide 4 that the present embodiment uses spreads optical waveguide for titanium.The technical solution of the technical solution and embodiment 1 of the present embodiment
It is essentially identical, the optical waveguide 4 in embodiment 1 is only exchanged into optical waveguide by annealed proton and is changed to titanium diffusion optical waveguide,
It is no longer described specifically its detailed technical solution herein.
To prepare above-mentioned silicon substrate lithium niobate high-speed optical modulator, a kind of silicon substrate lithium niobate high-speed light tune is present embodiments provided
The preparation method of device processed includes the following steps：
(1) in the upper surface of silicon substrate wafer 1, using thermal oxidation technology or using ion sputtering, magnetron sputtering skill
Any coating technique such as art, chemical vapour deposition technique prepares layer of silicon dioxide under-clad layer 2, forms silicon based silicon dioxide base
Bottom chip 1；
(2) lithium niobate monocrystal upper wafer surface, using photoetching and coating process, preparation forms 4 institute of titanium diffusion optical waveguide
The titanium film figure needed；
(3) titanium diffusion technique is used, titanium diffusion optical waveguide 4 is prepared in lithium niobate monocrystal chip；
(4) the lithium niobate monocrystal chip for being formed with titanium diffusion optical waveguide 4 is carried out with silica-on-silicon substrates chip 1
Bonding；
(5) fine gtinding polishing process is used, lithium niobate monocrystal chip is thinned, forms LiNbO_3 film 3；
(6) in the upper surface of LiNbO_3 film 3, using photoetching and coating process, preparation formed travelling wave electric pole structure 5-1 and
Titanium film needed for 5-2 or chromium gold film figure；
(7) thick resist lithography technique is used, the thick photoresist mask structure needed for traveling wave electrode 5-1 and 5-2 plating is prepared；
(8) chip prepared using step (1)-(7) is immersed in gold plating bath, prepares traveling wave electrode 5-1 and 5-2 institutes
The thick electrode structure needed；
(9) in waveguide wafer end face point ultraviolet glue, silicon V-shaped 6 with coupling optical fiber 7 are carried out with waveguide wafer end face
Bonding, solidification is exposed to ultraviolet glue.
Embodiment 3
As shown in Figure 4 and Figure 5, the main distinction of the present embodiment and silicon substrate lithium niobate high-speed optical modulator described in embodiment 1
It is, the present embodiment is intensity modulator.The present embodiment and embodiment 1 it is specific difference lies in：
The first, optical waveguide 4 uses MZ type optical waveguides, by input waveguide 4-1, Y-branch structured waveguide 4-2, both arms wave
4-3 and output waveguide 4-4 compositions are led, optical waveguide 4 is made in LiNbO_3 film, and for duct width at 1 μm to 10 μm, waveguide is deep
Degree is at 1 μm to 10 μm；
The second, metal electrode 5 uses travelling-wave-type electrode structure, by a signal electrode 5-1 and two ground electrode 5-2 groups
At being placed in the left side, centre and right side of both arms waveguide 4-3.Metal electrode 5 is made in the upper surface of LiNbO_3 film 3, using gold
As electrode material, thickness is at 1 μm to 30 μm.For increase gold LiNbO_3 film between adhesion strength, before preparing golden film,
One layer of titanium film or chromium film are first prepared in the upper surface of LiNbO_3 film, and thickness, to 200nm, and makes gold on this basis in 10nm
Belong to the golden film needed for electrode 5, to form titanium electrode or cr-au electrode.
The technical solution modulator and the technical solution of preparation method and embodiment 1 of the present embodiment are essentially identical, only will
Optical waveguide 4 in embodiment 1 is changed to MZ type optical waveguides by vertical bar type optical waveguide, by the metal electrode 5 in embodiment 1 by
One ground electrode 5-2 is changed to two ground electrode 5-2, is no longer described specifically its detailed technical solution and preparation method herein.
Embodiment 4
As shown in Figure 4 and Figure 6, the main distinction of the present embodiment and silicon substrate lithium niobate high-speed optical modulator described in embodiment 2
It is, the present embodiment is intensity modulator.The present embodiment and embodiment 2 it is specific difference lies in：
The first, optical waveguide 4 uses MZ type optical waveguides, by input waveguide 4-1, Y-branch structured waveguide 4-2, both arms wave
4-3 and output waveguide 4-4 compositions are led, optical waveguide 4 is made in LiNbO_3 film, and for duct width at 1 μm to 10 μm, waveguide is deep
Degree is at 1 μm to 10 μm；
The second, metal electrode 5 uses travelling-wave-type electrode structure, by a signal electrode 5-1 and two ground electrode 5-2 groups
At being placed in the left side, centre and right side of both arms waveguide 4-3.Metal electrode 5 is made in the upper surface of LiNbO_3 film 3, using gold
As electrode material, thickness is at 1 μm to 30 μm.For increase gold LiNbO_3 film between adhesion strength, before preparing golden film,
One layer of titanium film or chromium film are first prepared in the upper surface of LiNbO_3 film, and thickness, to 200nm, and makes gold on this basis in 10nm
Belong to the golden film needed for electrode 5, to form titanium electrode or cr-au electrode.
The modulator of the present embodiment and the technical solution of preparation method and the technical solution of embodiment 2 are essentially identical, only
It is that the optical waveguide 4 in embodiment 2 is changed to MZ type optical waveguides by vertical bar type optical waveguide, by the metal electricity in embodiment 2
Pole 5 is changed to two ground electrode 5-2 by a ground electrode 5-2, is no longer described specifically its detailed technical solution and preparation herein
Method.
The above is only a preferred embodiment of the present invention, it is noted that for the common skill of the art
For art personnel, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (5)
1. a kind of silicon substrate lithium niobate high-speed optical modulator, which is characterized in that including：Silicon substrate wafer (1), silica under-clad layer
(2), LiNbO_3 film (3), optical waveguide (4), metal electrode, silicon V-shaped (6), coupling optical fiber (7),
The silicon substrate wafer (1) is using the silicon single crystal wafer of [100] crystal orientation, and thickness is in 0.1mm to 2mm；
The silica under-clad layer (2) is located at the upper surface of silicon substrate wafer, and the thickness of the silica under-clad layer (2) exists
1 μm to 30 μm；
The LiNbO_3 film (3) is located on silica under-clad layer (2), and the crystal orientation of LiNbO_3 film is that X cuts Y biographies or X cuts Z
It passes, thickness is at 1 μm to 20 μm；
The optical waveguide (4) is titanium diffused waveguide or annealed protonexchanged waveguides, is vertical bar shaped waveguiding structure or MZ waveguide junctions
Structure, the optical waveguide (4) are made in LiNbO_3 film (3), and duct width is at 1 μm to 10 μm, and waveguide depth is at 1 μm to 10
μm；
The metal electrode includes that signal electrode (5-1) and ground electrode (5-2) are made in niobic acid using travelling-wave-type electrode structure
Lithium film (3) upper surface, for thickness at 1 μm to 30 μm, the metal electrode is used as electrode material using gold；
Described silicon V-shaped (6) couple optical fiber (7) using the single crystal silicon material of [100] crystal orientation for placing；
The coupling optical fiber (7) is single mode optical fiber or single-mode polarization maintaining fiber, is placed in silicon V-shaped (6).
2. silicon substrate lithium niobate high-speed optical modulator according to claim 1, which is characterized in that the optical waveguide (4) is
When vertical bar shaped waveguiding structure, signal electrode (5-1) and ground electrode (5-2) are placed in the arranged on left and right sides of optical waveguide；The optics wave
Lead (4) be MZ waveguiding structures when, by input waveguide (4-1), Y-branch structured waveguide (4-2), both arms waveguide (4-3) and output wave
(4-4) composition is led, optical waveguide (4) is made in LiNbO_3 film (3), and metal electrode is by a signal electrode (5-1) and two
A ground electrode (5-2) composition, is placed in the left side, centre and right side of both arms waveguide (4-3).
3. silicon substrate lithium niobate high-speed optical modulator according to claim 2, which is characterized in that silicon V-shaped (6) have
The identical hot expansion property with silicon substrate wafer (1).
4. a kind of preparation method preparing silicon substrate lithium niobate high-speed optical modulator as described in claim 1, which is characterized in that packet
Include following preparation process：
The first step：In silicon substrate wafer (1) upper surface, using thermal oxidation technology or using ion sputtering, magnetron sputtering skill
Any coating technique of art, chemical vapour deposition technique prepares layer of silicon dioxide under-clad layer (2), forms silicon based silicon dioxide base
Bottom chip；
Second step：Lithium niobate monocrystal chip is bonded with silica-on-silicon substrates chip；
Third walks：Using fine gtinding polishing process, lithium niobate monocrystal chip is thinned, forms LiNbO_3 film (3)；
4th step：In LiNbO_3 film (3) upper surface, using photoetching and coating process, preparation forms annealed proton and exchanges optics
Chromium film pattern needed for waveguide or silica film pattern；
5th step：Using annealed proton exchange process, annealed proton is prepared in LiNbO_3 film (3) and exchanges optical waveguide；
6th step：It is using wet corrosion technique, the chromium film pattern of LiNbO_3 film (3) upper surface or silica film pattern is rotten
Eating away；
7th step：In LiNbO_3 film (3) upper surface, using photoetching and coating process, preparation is formed needed for travelling wave electric pole structure
Titanium film or chromium gold film figure；
8th step：Using thick resist lithography technique, the thick photoresist mask structure needed for traveling wave electrode plating is prepared；
9th step：The chip prepared to step 8 using step 1 is immersed in gold plating bath, is prepared needed for traveling wave electrode
Thick electrode structure；
Tenth step：In waveguide wafer end face point ultraviolet glue, by with single mode optical fiber or single-mode polarization maintaining fiber silicon V-shaped (6) with
Waveguide wafer end face is bonded, and solidification is exposed to ultraviolet glue.
5. a kind of preparation method preparing silicon substrate lithium niobate high-speed optical modulator as described in claim 1, which is characterized in that packet
Include following preparation process：
The first step：In silicon substrate wafer (1) upper surface, using thermal oxidation technology or using ion sputtering, magnetron sputtering skill
Any coating technique of art, chemical vapour deposition technique prepares layer of silicon dioxide under-clad layer (2), forms silicon based silicon dioxide base
Bottom chip；
Second step：Lithium niobate monocrystal upper wafer surface, using photoetching and coating process, preparation is formed needed for titanium diffusion optical waveguide
Titanium film figure；
Third walks：Using titanium diffusion technique, titanium diffusion optical waveguide is prepared in lithium niobate monocrystal chip；
4th step：Titanium will be formed with and spread lithium niobate monocrystal chip and the silica-on-silicon substrates chip of optical waveguide into line unit
It closes；
5th step：Using fine gtinding polishing process, lithium niobate monocrystal chip is thinned, forms LiNbO_3 film；
6th step：In LiNbO_3 film (3) upper surface, using photoetching and coating process, preparation is formed needed for travelling wave electric pole structure
Titanium film or chromium gold film figure；
7th step：Using thick resist lithography technique, the thick photoresist mask structure needed for traveling wave electrode plating is prepared；
8th step：The chip prepared using step 1 to seven is immersed in gold plating bath, the thickness electricity needed for traveling wave electrode is prepared
Pole structure；
9th step：In waveguide wafer end face point ultraviolet glue, by the silicon V-shaped and waveguide with single mode optical fiber or single-mode polarization maintaining fiber
Chip end face is bonded, and solidification is exposed to ultraviolet glue.
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