CN206133134U - Lithium niobate thin film electro-optical modulator with high modulation efficiency - Google Patents
Lithium niobate thin film electro-optical modulator with high modulation efficiency Download PDFInfo
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- CN206133134U CN206133134U CN201621134438.XU CN201621134438U CN206133134U CN 206133134 U CN206133134 U CN 206133134U CN 201621134438 U CN201621134438 U CN 201621134438U CN 206133134 U CN206133134 U CN 206133134U
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- China
- Prior art keywords
- film
- electrode
- lithium niobate
- optical waveguide
- linbo
- Prior art date
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000010287 polarization Effects 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The utility model discloses a lithium niobate thin film electro-optical modulator with high modulation efficiency, which is characterized in that an upper-layer electrode (signal electrode) is respectively positioned above an optical waveguide and a lower-layer electrode is a ground electrode by preparing the electrode of the lithium niobate electro-optical modulator into an upper-lower type structure, so that the upper-lower type electrode structure can achieve 100 percent modulation efficiency to the optical waveguide and is far higher than the electro-optical modulation efficiency of 40 percent to 50 percent of the traditional lithium niobate electro-optical modulator; in addition, the lithium niobate thin film material with the single crystal structure and the thickness of 0.1-10 mu m is adopted, so that the shorter electrode distance compared with the traditional lithium niobate electro-optical modulator can be realized. The two factors can greatly reduce the half-wave voltage of the lithium niobate electro-optical modulator.
Description
Technical field
This utility model is related to fiber optic communication and technical field of optical fiber sensing, more particularly to a kind of niobium of high modulate efficiency
Sour lithium thin film electrooptic modulator.
Background technology
Ever-increasing fiber bandwidth demand driving coherent optical communication system advances and applies.Although first generation 100G
Coherent optical communication system has laid several years in a network, the requirement to bandwidth, port density and system energy consumption amount according to
So improving constantly, also promoting technology to advance to the system of 200G, 400G even more high speed.
During the Optical Communication Technology Development of early stage, lithium columbate crystal plays an important role.Based on lithium niobate crystal
The Mach-Zehnder modulators of body, with low-loss, high modulation bandwidth, High Extinction Ratio and the low significant advantage such as warble, as
External modulator is widely used in extra long distance ultra high-speed optical network.
However, with the continuous development of optical communication technique, the volume existed due to lithium niobate electrooptic modulator itself and half
The larger problem of wave voltage so as to which the application in optical communication system particularly coherent optical communication system receives larger system
About.The larger problem of lithium niobate electrooptic modulator volume and half-wave voltage comes from the traveling wave adopted by lithium niobate electrooptic modulator
Electrode, this electrode structure have relatively low Electro-optical Modulation efficiency.The half-wave voltage and traveling wave electrode of lithium niobate electrooptic modulator
The design consideration of length is determined by following formula：
Wherein, VπFor the half-wave voltage of manipulator, L is traveling wave electrode length, and Γ is Electro-optical Modulation efficiency, and d is traveling wave electricity
Spacing between extremely middle signal electrode and ground electrode, λ are device operation wavelength, and n is optical waveguide index, and γ is lithium columbate crystal
Electro-optic coefficient.From above formula, when lithium niobate electrooptic modulator structural parameters (Γ, d, λ, n etc.) for fixed value when, device
Half-wave voltage and traveling wave electrode length are inversely proportional relations, i.e., device half is capable of achieving by way of extending traveling wave electrode length
The reduction of wave voltage, but this can cause the increase of device volume.Therefore, be reduce lithium niobate electrooptic modulator half-wave voltage,
It is then superior technique scheme using shortening electrode spacing d and improving Electro-optical Modulation efficiency Γ.However, shortening the meeting of electrode spacing d
Cause the reduction of device modulation bandwidth, therefore, improve Electro-optical Modulation efficiency Γ then more effectively.
Improve Electro-optical Modulation efficiency and can adopt the following two kinds technical scheme：(1) make the row based on ridge lithium niobate waveguides
Wave electrode structure, (2) reduce silicon dioxide buffer layer thickness or remove silicon dioxide cushion.Above two improves Electro-optical Modulation
In the technical scheme of efficiency, scheme (1) make ridge lithium niobate waveguides when need to by the way of dry etching or wet etching,
Made ridge lithium niobate waveguides loss is excessive, causes device insertion loss excessive；Scheme (2) reduces silicon dioxide
The thickness of cushion, result in the decline of light wave and microwave refractometer rate matching degree, can reduce the bandwidth of operation of device.
The content of the invention
The purpose of this utility model is to provide a kind of LiNbO_3 film electrooptic modulator of high modulate efficiency, above-mentioned to solve
Problem caused by the technical scheme of two kinds of raising Electro-optical Modulation efficiency.
To realize the purpose of this utility model, this utility model provides a kind of LiNbO_3 film electric light of high modulate efficiency
Manipulator, it is characterised in that base material 1, lower electrode 2, bottom breaker 3, LiNbO_3 film 4, optical waveguide 5, upper buffering
Layer 6, upper electrode 7, the upper electrode 7 is signal level, including anelectrode and negative electrode, and anelectrode and negative electrode are located at respectively
Above left and right sides optical waveguide 5, the lower electrode is ground electrode, and the LiNbO_3 film 4 is with mono-crystalline structures, thick
Spend the lithium niobate thin-film materials for 0.1 μm to 10 μm.
Compared with prior art, the beneficial effects of the utility model are, the application is by by lithium niobate electrooptic modulator
Electrode is prepared into mo(u)ld bottom half structure, and upper electrode (pickup electrode) is located above optical waveguide respectively, and lower electrode is ground electrode, because
And upper mo(u)ld bottom half electrode structure can play 100% modulation efficiency to optical waveguide, far above traditional lithium niobate electrooptic modulator
40% to 50% Electro-optical Modulation efficiency；Additionally, the application is adopted has mono-crystalline structures, thickness for 0.1 μm to 10 μm
Lithium niobate thin-film materials, are capable of achieving shorter electrode spacing compared with traditional lithium niobate electrooptic modulator.Above-mentioned two aspects factor
The half-wave voltage of lithium niobate electrooptic modulator can be greatly reduced.
Description of the drawings
Fig. 1 show the cross section structure schematic diagram of this utility model embodiment 1 and is intended to；
Fig. 2 show the cross section structure schematic diagram of this utility model embodiment 2 and is intended to；
Fig. 3 show the cross section structure schematic diagram of this utility model embodiment 3 and is intended to；
In figure, base material 1, lower electrode 2, bottom breaker 3, LiNbO_3 film 4, optical waveguide 5, upper cushion 6, on
Layer electrode 7.
Specific embodiment
This utility model is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that this place
The specific embodiment of description only to explain this utility model, is not used to limit this utility model.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in this manual using belong to "comprising" and/or " bag
Include " when, which indicates existing characteristics, step, operation, part or module, component and/or combinations thereof.
It should be noted that the description and claims of this application and the term " first " in above-mentioned accompanying drawing, "
Two " it is etc. for distinguishing similar object, without for describing specific order or precedence.It should be appreciated that so using
Data can exchange in the appropriate case, so that presently filed embodiment described herein for example can be with except here
Order beyond those of diagram or description is implemented.Additionally, term " comprising " and " having " and their any deformation, it is intended that
Be cover it is non-exclusive include, for example, contain process, method, system, product or the equipment of series of steps or unit not
Be necessarily limited to those steps or the unit clearly listed, but may include clearly not list or for these processes, side
Other intrinsic steps of method, product or equipment or unit.
For the ease of description, space relative terms can be used here, such as " ... on ", " ... top ",
" in ... upper surface ", " above " etc., for describe as a part shown in the figure or module or feature and other
The spatial relation of part or module or feature.It should be appreciated that space relative terms be intended to comprising except part or
Different azimuth in use or operation outside orientation of person's module described in figure.For example, if the part in accompanying drawing
Or module is squeezed, then be described as " above miscellaneous part or module or construction " or " in miscellaneous part or module or
On construction " part or module after will be positioned as " below miscellaneous part or module or construction " or " at other
Under part or module or construction ".Thus, exemplary term " ... top " can include " ... top " and
" in ... lower section " two kinds of orientation.The part or module can also other different modes positioning (be rotated by 90 ° or in other
Orientation), and respective explanations are made to the relative description in space used herein above.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase
Mutually combine.
Embodiment 1
As shown in figure 1, the present embodiment includes base material 1, lower electrode 2, bottom breaker 3, LiNbO_3 film 4, optics
Waveguide 5, upper cushion 6, upper electrode 7, the upper electrode 7 is signal level, including anelectrode and negative electrode, anelectrode and negative
Electrode respectively be located at left and right sides optical waveguide 5 above, the lower electrode be ground electrode, the LiNbO_3 film 4 be with
Mono-crystalline structures, the lithium niobate thin-film materials that thickness is 5 μm to 10 μm.The base material 1 adopts thickness for 0.1mm to 2mm
Z cut Lithium metaniobate body crystalline substance material；The lower electrode 2 adopts thickness for metallic films such as the gold or aluminum of 0.1um to 30um；It is described
Bottom breaker 3 and upper cushion 2 adopt thickness for sulls such as the silicon dioxide or aluminium oxide of 0.1um to 5um；The niobium
Sour lithium thin film 4 is lithium niobate thin-film materials with mono-crystalline structures, that thickness is 0.1 μm to 10 μm, by bonding technology with subtract
It is prepared by the process meanses that thin technique combines；The optical waveguide 5 is that titanium spreads optical waveguide or annealed proton exchanges optics ripple
Lead, waveguide diffusion breadth is 1 to 20 μm, diffusion depth is 1 to 20 μm；The upper electrode 7 adopts thickness for 0.1um to 30um
Gold or the metallic film such as aluminum, anelectrode and negative electrode are located above left and right sides optical waveguide 5 respectively.
Embodiment 2
As shown in Fig. 2 the present embodiment with the difference of embodiment 1 is, the low-resistance silicon base material instead of above-mentioned side
Lithium metaniobate body crystalline substance base material 1, lower electrode 2 and bottom breaker 3 in case, serves lower floor's electricity by its low resistance characteristic
The effect of pole 2, and make the low-resistance silicon base to become ground electrode by silicon base bonding with Can by conducting resinl；The upper buffering
Layer 6 adopts thickness for sulls such as the silicon dioxide or aluminium oxide of 0.1um to 5um；The upper electrode 7 adopt thickness for
The metallic film such as the gold of 0.1um to 30um or aluminum.
Embodiment 3
The present embodiment is on the basis of embodiment 1 or embodiment 2, there is provided a kind of new LiNbO_3 film (4) structure, its
Remaining scheme is consistent with embodiment 1 or embodiment 2.The LiNbO_3 film (4) is by left half side film portion and right half side thin film
Part constitutes, wherein left half side film portion has+c polarised directions or-c polarised directions, accordingly, right half side film portion
With-c polarised directions or+c polarised directions, that is to say, that when left half side film portion has+c polarised directions, right half side thin film
Part has-c polarised directions, and when left half side film portion has-c polarised directions, right half side film portion has+c polarization sides
To.As shown in figure 3, being the improved diagram carried out on the basis of embodiment 1.
The above is only preferred implementation of the present utility model, it is noted that general for the art
For logical technical staff, on the premise of without departing from this utility model principle, some improvements and modifications can also be made, these change
Enter and retouch also to should be regarded as protection domain of the present utility model.
Claims (4)
1. the LiNbO_3 film electrooptic modulator of a kind of high modulate efficiency, it is characterised in that base material (1), lower electrode
(2), bottom breaker (3), LiNbO_3 film (4), optical waveguide (5), upper cushion (6), upper electrode (7), the upper strata electricity
Pole (7) is signal level, including anelectrode and negative electrode, and anelectrode and negative electrode are located in left and right sides optical waveguide (5) respectively
Side, the lower electrode are ground electrode, and the LiNbO_3 film (4) is with mono-crystalline structures, thickness is 0.1 μm to 10 μm
Lithium niobate thin-film materials.
2. the LiNbO_3 film electrooptic modulator of high modulate efficiency according to claim 1, it is characterised in that the niobic acid
Lithium thin film (4) is made up of left half side film portion and right half side film portion, wherein left half side film portion has+c polarization sides
To or-c polarised directions, accordingly, right half side film portion has-c polarised directions or+c polarised directions.
3. the LiNbO_3 film electrooptic modulator of high modulate efficiency according to claim 1 and 2, it is characterised in that described
Base material (1) adopts thickness cuts Lithium metaniobate body crystalline substance material for the z of 0.1mm to 2mm；The lower electrode (2) adopt thickness for
The gold of 0.1um to 30um or aluminum metal thin film；The bottom breaker (3) and upper cushion (6) adopt thickness for 0.1um to 5um
Silicon dioxide or aluminum oxide film；The optical waveguide (5) spreads optical waveguide for titanium or annealed proton exchanges optical waveguide,
Waveguide diffusion breadth is 1 to 20 μm, and diffusion depth is 1 to 20 μm；The upper electrode (7) adopts thickness for 0.1um to 30um
Gold or aluminum metal thin film.
4. the LiNbO_3 film electrooptic modulator of high modulate efficiency according to claim 1 and 2, it is characterised in that described
Base material (1), lower electrode (2) and bottom breaker (3) are using 0.1mm to 2mm low-resistance silicon crystal materials, the optics ripple
Leading (5) and optical waveguide or annealed proton exchange optical waveguide being spread for titanium, waveguide diffusion breadth is 1 to 20 μm, and diffusion depth is 1
To 20 μm；The upper cushion (6) adopts thickness for the silicon dioxide or aluminum oxide film of 0.1um to 5um；The upper electrode
(7) adopt thickness for 0.1um to 30um gold or aluminum metal thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621134438.XU CN206133134U (en) | 2016-10-18 | 2016-10-18 | Lithium niobate thin film electro-optical modulator with high modulation efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621134438.XU CN206133134U (en) | 2016-10-18 | 2016-10-18 | Lithium niobate thin film electro-optical modulator with high modulation efficiency |
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| Publication Number | Publication Date |
|---|---|
| CN206133134U true CN206133134U (en) | 2017-04-26 |
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|---|---|---|---|
| CN201621134438.XU Expired - Fee Related CN206133134U (en) | 2016-10-18 | 2016-10-18 | Lithium niobate thin film electro-optical modulator with high modulation efficiency |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107957631A (en) * | 2016-10-18 | 2018-04-24 | 天津领芯科技发展有限公司 | A kind of LiNbO_3 film electrooptic modulator of high modulate efficiency |
| CN110221387A (en) * | 2019-07-17 | 2019-09-10 | 中国科学院半导体研究所 | A kind of photon chip and preparation method thereof |
| CN112764246A (en) * | 2021-01-27 | 2021-05-07 | 浙江大学 | Thin-film lithium niobate electro-optical modulator and preparation method thereof |
| US11874497B2 (en) | 2019-07-17 | 2024-01-16 | Institute Of Semiconductors, Chinese Academy Of Sciences | Photonic chip and preparation method thereof |
-
2016
- 2016-10-18 CN CN201621134438.XU patent/CN206133134U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107957631A (en) * | 2016-10-18 | 2018-04-24 | 天津领芯科技发展有限公司 | A kind of LiNbO_3 film electrooptic modulator of high modulate efficiency |
| CN110221387A (en) * | 2019-07-17 | 2019-09-10 | 中国科学院半导体研究所 | A kind of photon chip and preparation method thereof |
| CN110221387B (en) * | 2019-07-17 | 2020-08-04 | 中国科学院半导体研究所 | Photon chip and preparation method thereof |
| US11874497B2 (en) | 2019-07-17 | 2024-01-16 | Institute Of Semiconductors, Chinese Academy Of Sciences | Photonic chip and preparation method thereof |
| CN112764246A (en) * | 2021-01-27 | 2021-05-07 | 浙江大学 | Thin-film lithium niobate electro-optical modulator and preparation method thereof |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181115 Address after: 430040 Innovation Avenue 388-1 (1) in Dongxihu District, Wuhan City, Hubei Province Patentee after: Wuhan Qipu Micro Semiconductor Co.,Ltd. Address before: 300 000 No. 5 Shuangchen Middle Road, Beichen Economic and Technological Development Zone, Beichen District, Tianjin (Office Building 702-016) Patentee before: TIANJIN LINGXIN TECHNOLOGY DEVELOPMENT CO.,LTD. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170426 |