CN206470492U - A kind of low driving voltage lithium niobate electrooptic modulator - Google Patents
A kind of low driving voltage lithium niobate electrooptic modulator Download PDFInfo
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- CN206470492U CN206470492U CN201621423933.2U CN201621423933U CN206470492U CN 206470492 U CN206470492 U CN 206470492U CN 201621423933 U CN201621423933 U CN 201621423933U CN 206470492 U CN206470492 U CN 206470492U
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Abstract
The utility model discloses a kind of low driving voltage lithium niobate electrooptic modulator, making ridge waveguide structure on lithium columbate crystal is passed by cutting Y in X, and the electrode structure of electrooptic modulator is made in the both sides of ridge waveguide structure, the electric field between electrooptic modulator electrode structure is distributed along horizontal direction.Compared with existing lithium niobate electrooptic modulator, the utility model proposes lithium niobate electrooptic modulator can be substantially improved modulation efficiency of the electric field to light field, reduce the driving voltage of device.In addition in other schemes, ridge waveguide structure can also be made using advanced low-k materials as the base wafer of LiNbO_3 film and on LiNbO_3 film, both the bandwidth of operation of lithium niobate electrooptic modulator can be effectively lifted, the driving voltage of lithium niobate electrooptic modulator can be reduced again.
Description
Technical field
The utility model is related to fiber optic communication, coherent light communication, Microwave photonics technical field, more particularly to a kind of low
Driving voltage lithium niobate electrooptic modulator.
Background technology
Electrooptic modulator is one of core devices in optical fiber telecommunications system, carries electric signal and is changed to optical signal
Key effect.With continuing to develop for the communication technology, the technology of information transmission medium is used as using the optical fiber using ultra-low loss
Also the technical fields such as coherent light communication and Microwave photonics are applied to.
In fiber optic communication particularly coherent optical communication system, used optical module is in the technique direction towards low-power consumption
Development, and the driving voltage of the reduction inevitable requirement electrooptic modulator of optical module power consumption does and further reduced.In microwave photon
Field, electrooptic modulator is loaded into the core devices of optical signal, the reduction of its driving voltage as microwave or millimeter-wave signal
Link gain, reduction link signal to noise ratio for lifting microwave/millimeter wave optical fiber link, serve very crucial effect.
Lithium columbate crystal, with the waveguiding structure preparation technology of its higher electro-optic coefficient, heat endurance and maturation, is to work as
Most widely employed material in preceding commercialization electrooptic modulator product.However, lithium niobate electrooptic modulator at present there are still
The problem of driving voltage is higher.The higher driving voltage of lithium niobate electrooptic modulator mostlys come from following two aspects：
(1) lithium niobate electrooptic modulator uses coplanar-electrode structure, is carried in the electric field pair on coplanar-electrode structure
The modulation efficiency of light field is not high, adds modulator driving voltage；
(2) in order to realize lithium niobate electrooptic modulator, particularly high frequency electrooptic modulator, working frequency or bandwidth are carried
Rise, a layer thickness need to be often prepared on lithium niobate surface in 0.2 μm to 2 μm of silicon dioxide film as cushion, with reduce microwave/
The effective refractive index of millimeter-wave signal, lifting feature impedance, and the introducing of cushion has inevitably led to partial pressure effect, increases
The driving voltage of electrooptic modulator is added.
In order to lift the Electro-optical Modulation efficiency of lithium niobate electrooptic modulator, often selection cuts lithium columbate crystal using Z and makes electricity
Optical modulator, or making ridge feature optical waveguide on lithium columbate crystal is cut in Z, electric field is more strongly fettered with realizing, reduced
The driving voltage of lithium niobate electrooptic modulator.But, the electrooptic modulator of lithium columbate crystal making is cut using Z, dc shift is existing
As fairly obvious, the long-term behaviour stability to device causes large effect.In addition, it is normal to make ridge feature optical waveguide
The wet etch techniques corroded using the dry etching technology of plasma etching or using hydrofluoric acid, are had manufacture craft and answered
Miscellaneous, X cuts the problems such as lithium columbate crystal etching or corrosion difficulty are big, the loss of ridge feature optical waveguide transmission is high.
Utility model content
First purpose of the present utility model is to provide a kind of low driving voltage lithium niobate electrooptic modulator, by cutting Y in X
Pass and ridge waveguide structure is made on lithium columbate crystal, and the electrode structure of electrooptic modulator is made in the two of ridge waveguide structure
Side, allows the electric field between electrooptic modulator electrode structure to be distributed along horizontal direction.
To achieve these goals, the first technical scheme that the utility model is used is as follows：
A kind of low driving voltage lithium niobate electrooptic modulator, including lithium niobate crystal chip 1, ridge structure 2, optical waveguide 3, two
Silicon oxide film 4, modulator electrode 5,
The lithium niobate crystal chip 1 is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm；
The ridge structure 2 is made on lithium niobate crystal chip 1, and its width is at 1 μm to 10 μm, highly at 1 μm to 10 μm；
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed at ridge
In type structure 2；
The silica membrane 4 serves the effect for reducing velocity mismatch, lifting impedance matching, and its thickness is at 0.1 μm
To 5 μm；
The modulator electrode 5 is the travelling-wave-type electrode being made of gold or aluminum metal film, and thickness of electrode is 1 μm to 30 μ
M, the edge of modulator electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to ridge structure
The energy formation of the optical mode transmitted in 2 absorbs, and increases the insertion loss of electrooptic modulator.
To achieve these goals, to additionally provide the second technical scheme as follows for the utility model：
A kind of low driving voltage lithium niobate electrooptic modulator, it is characterised in that including：Lithium niobate crystal chip 1, ridge structure 2,
Optical waveguide 3, silica membrane 4, modulator electrode 5,
The lithium niobate crystal chip 1 is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm；
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed at ridge
In structure 2；
The width of the ridge structure 2 is at 1 μm to 10 μm, highly at 1 μm to 10 μm, because optical waveguide 3 is MZ structures,
Wherein have a bent portion of Y-branch shape, therefore when making ridge structure 2, only need to optical waveguide 3 modulation both arms left and right sides
Carry out accurate cutting, i.e. cutting position and be located at the left side of modulation both arms, middle and right side, make the modulation both arms shape of optical waveguide 3
Into in ridge structure 2；
The silica membrane 4 serves the effect for reducing velocity mismatch, lifting impedance matching, and its thickness is at 0.1 μm
To 5 μm；
The travelling-wave-type electrode that the modulator electrode 5 is made of gold or aluminum metal film, thickness of electrode is 1 μm to 30 μm,
The edge of modulator electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to ridge structure 2
The energy formation of the optical mode of middle transmission absorbs, and increases the insertion loss of electrooptic modulator.
Compared with existing lithium niobate electrooptic modulator, what the technical scheme of the utility model first and the second technical scheme were proposed
Modulation efficiency of the electric field to light field can be substantially improved in lithium niobate electrooptic modulator, reduce the driving voltage of device.
Second purpose of the present utility model is to provide a kind of low driving voltage lithium niobate electrooptic modulator, by cutting Y in X
Pass and ridge waveguide structure is made on LiNbO_3 film, the electrode structure of electrooptic modulator is made in the two of ridge waveguide structure
Side, and using base wafer of the advanced low-k materials as LiNbO_3 film, both can effectively lift lithium niobate electric light tune
The bandwidth of operation of device processed, can reduce the driving voltage of lithium niobate electrooptic modulator again.
To realize the purpose of the second technical scheme, the utility model provides the 3rd technical scheme：A kind of low driving voltage
Lithium niobate electrooptic modulator, including base wafer 6, LiNbO_3 film 7, ridge structure 2, optical waveguide 3, modulator electrode 5；
The base wafer 6 is as the hosqt media of LiNbO_3 film 7, the lithium niobate after being lithium niobate crystal chip and being thinned
Film 7 is provided a supporting role, and base wafer 6 is using the material with low-k, such as quartz, or passes through at thermal oxide
Reason, the silicon based silicon dioxide chip for having in silicon wafer surface one layer of fine and close silica coating, the thickness of base wafer 6 exist
0.1mm to 2mm；
The LiNbO_3 film 7 by by optical grade, twin polishing lithium niobate monocrystal bonding chip in base wafer 6
On, it is made by being thinned, the crystal of LiNbO_3 film 7 tangentially cuts Y biographies for X, and thickness is at 1 μm to 20 μm；
The ridge structure 2 is made on LiNbO_3 film 7, and its width is at 1 μm to 10 μm, highly at 1 μm to 20 μm；
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed at ridge
In type structure 2；
The travelling-wave-type electrode that the modulator electrode 5 is made of metallic films such as gold or aluminium, thickness of electrode is 1 μm to 30 μ
M, the edge of modulator electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to ridge structure
The energy formation of the optical mode transmitted in 2 absorbs, and increases the insertion loss of electrooptic modulator.
To realize the purpose of the second technical scheme, the utility model additionally provides the 4th technical scheme：A kind of low driving electricity
Pressure lithium niobate electrooptic modulator, base wafer 6, LiNbO_3 film 7, ridge structure 2, optical waveguide 3, modulator electrode 5,
The base wafer 6 is as the hosqt media of LiNbO_3 film 7, the lithium niobate after being lithium niobate crystal chip and being thinned
Film 7 is provided a supporting role.Base wafer 6 is using the material with low-k, such as quartz, or passes through at thermal oxide
Reason, the silicon based silicon dioxide chip for having in silicon wafer surface one layer of fine and close silica coating, the thickness of base wafer 6 exist
0.1mm to 2mm；
The LiNbO_3 film 7 by by optical grade, twin polishing lithium niobate monocrystal bonding chip in base wafer,
Be made by being thinned, the crystal of LiNbO_3 film 7 tangentially cuts Y biographies for X, thickness at 1 μm to 20 μm,
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed at ridge
In structure 2,
The ridge structure 2 is made on LiNbO_3 film 7, and its width is at 1 μm to 10 μm, highly at 1 μm to 10 μm.By
In optical waveguide 3 be MZ structures, only need to be in optics wherein there is the bent portion of Y-branch shape, therefore when making ridge structure 2
The modulation both arms left and right sides of waveguide 3 carries out accurate cutting, i.e. cutting position and is located at the left side of modulation both arms, middle and right side, makes
The modulation both arms of optical waveguide 3 are formed at ridge structure 2,
The travelling-wave-type electrode that the modulator electrode 5 is made of metallic films such as gold or aluminium, thickness of electrode is 1 μm to 30 μ
M, the edge of modulator electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to ridge structure
The energy formation of the optical mode transmitted in 2 absorbs, and increases the insertion loss of electrooptic modulator.
The technical scheme of the utility model the 3rd and the 4th technical scheme provide a kind of low driving voltage lithium niobate Electro-optical Modulation
Device, passes making ridge waveguide structure on LiNbO_3 film by cutting Y in X, the electrode structure of electrooptic modulator is made in into ridge
The both sides of waveguiding structure, and both can effectively be lifted as the base wafer of LiNbO_3 film using advanced low-k materials
The bandwidth of operation of lithium niobate electrooptic modulator, can reduce the driving voltage of lithium niobate electrooptic modulator again.
Brief description of the drawings
Fig. 1 show the chip profile schematic diagram of existing lithium niobate electrooptic modulator；
Fig. 2 show the utility model proposes lithium niobate electrooptic modulator embodiment one chip profile schematic diagram；
Fig. 3 show the utility model proposes lithium niobate electrooptic modulator embodiment one chip structure schematic diagram；
Fig. 4 show the utility model proposes lithium niobate electrooptic modulator embodiment two chip profile schematic diagram；
Fig. 5 show the utility model proposes lithium niobate electrooptic modulator embodiment two chip structure schematic diagram；
Fig. 6 show the utility model proposes lithium niobate electrooptic modulator embodiment three chip profile schematic diagram；
Fig. 7 show the utility model proposes lithium niobate electrooptic modulator embodiment three chip structure schematic diagram；
Fig. 8 show the utility model proposes lithium niobate electrooptic modulator example IV chip profile schematic diagram；
Fig. 9 show the utility model proposes lithium niobate electrooptic modulator example IV chip structure schematic diagram；
In figure, the corresponding title of each mark is respectively：1. lithium niobate crystal chip；2. ridge structure；3. optical waveguide；4.
Silica membrane；5. modulator electrode；6. base wafer；7. LiNbO_3 film.
Embodiment
The utility model is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that this place
The specific embodiment of description only to explain the utility model, is not used to limit the utility model.
It should be noted that " connection " described herein and the word for expressing " connection ", such as " being connected ",
" connected " etc., was both directly connected to including a certain part with another part, also passed through miscellaneous part and another portion including a certain part
Part is connected.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in this manual using belong to "comprising" and/or " bag
Include " when, it indicates existing characteristics, step, operation, part or module, component and/or combinations thereof.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase
Mutually combination.
Embodiment 1
Fig. 2 and Fig. 3 are the first embodiments of low driving voltage lithium niobate electrooptic modulator proposed by the invention, described to be
The lithium niobate phase modulator of high modulation bandwidth (or high modulation rate).For the niobic acid of high modulation bandwidth (or high modulation rate)
Lithium electrooptic modulator, frequently with travelling-wave-type electrode structure, and need to often add silica membrane as cushion to realize speed
Matching and impedance matching, improve device modulation bandwidth (or modulation rate).
The lithium niobate electrooptic modulator that the present embodiment is provided includes：Lithium niobate crystal chip 1, ridge structure 2, optical waveguide 3,
Silica membrane 4, modulator electrode 5.
Lithium niobate crystal chip 1 is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm.
Ridge structure 2 is made on lithium niobate crystal chip 1, and its width is at 1 μm to 10 μm, highly at 1 μm to 10 μm.
Optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed at ridge knot
In structure 2.
Silica membrane 4 serves the effect for reducing velocity mismatch, lifting impedance matching, and its thickness is at 0.1 μm to 5 μ
m。
The travelling-wave-type electrode that modulator electrode 5 is made of metallic films such as gold or aluminium, thickness of electrode is 1 μm to 2 μm, modulation
The edge of electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to being passed in ridge structure 2
The energy formation of defeated optical mode absorbs, and increases the insertion loss of electrooptic modulator.
The manufacture method for the lithium niobate electrooptic modulator that the present embodiment is provided comprises the following steps：
1. titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process are used, in lithium niobate crystal chip
Titanium diffusion optical waveguide 3 is prepared in 1 or annealed proton exchanges optical waveguide 3, optical waveguide 3 is vertical bar structure；
2. using ultraprecise diamond blade, ultraprecise cutting is carried out respectively in the left and right of optical waveguide 3, ridge knot is obtained
Structure 2；
3. using sputtering technology or pecvd process, including the lithium niobate crystal chip 1 of ridge structure 2 and optical waveguide 3
Surface prepares layer of silicon dioxide film 4, and its thickness is at 0.1 μm to 5 μm；
4. using photoetching process and coating process in conventional semiconductor process, formed in the top of silica membrane 4
Gold or aluminium film needed for making modulator electrode 5, thickness is at 0.1 μm~1 μm；
5. using the thick resist lithography technique in conventional semiconductor process, make modulator electrode 5 and electroplate required thick photoresist
Mask；
6. using the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that step 4 makes, pass through
Plating obtains thickness in 1 μm~30 μm of gold or the metal film such as aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
Embodiment 2
Fig. 4 and Fig. 5 are the second embodiments of low driving voltage lithium niobate electrooptic modulator proposed by the invention, described to be
The lithium niobate intensity modulator of high modulation bandwidth (or high modulation rate).For the niobic acid of high modulation bandwidth (or high modulation rate)
Lithium electrooptic modulator, frequently with travelling-wave-type electrode structure, and need to often add silica membrane as cushion to realize speed
Matching and impedance matching, improve device modulation bandwidth (or modulation rate).
The lithium niobate electrooptic modulator that the present embodiment is provided includes：Lithium niobate crystal chip 1, ridge structure 2, optical waveguide 3,
Silica membrane 4, modulator electrode 5.
Lithium niobate crystal chip 1 is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm.
Optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed at ridge structure
In 2.
The width of ridge structure 2 is at 1 μm to 10 μm, highly at 1 μm to 10 μm.Because optical waveguide 3 is MZ structures, wherein
There is the bent portion of Y-branch shape, therefore when making ridge structure 2, need to only be carried out in the modulation both arms left and right sides of optical waveguide 3
Accurate cutting, i.e. cutting position are located at the left side of modulation both arms, middle and right side, make the modulation both arms formation ridge of optical waveguide 3
Type structure 2.
Silica membrane 4 serves the effect for reducing velocity mismatch, lifting impedance matching, and its thickness is at 0.1 μm to 5 μ
m。
The travelling-wave-type electrode that modulator electrode 5 is made of metallic films such as gold or aluminium, thickness of electrode is 1 μm to 2 μm, modulation
The edge of electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to being passed in ridge structure 2
The energy formation of defeated optical mode absorbs, and increases the insertion loss of electrooptic modulator.
The manufacture method for the lithium niobate electrooptic modulator that the present embodiment is provided comprises the following steps：
1. titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process are used, in lithium niobate crystal chip
Titanium diffusion optical waveguide 3 is prepared in 1 or annealed proton exchanges optical waveguide 3, optical waveguide 3 is MZ structures；
2. using ultraprecise diamond blade, the left and right of the modulation both arms of optical waveguide 3 (MZ structures) carries out superfinishing respectively
Cut closely, obtain ridge structure 2；
3. using sputtering technology or pecvd process, including the lithium niobate crystal chip 1 of ridge structure 2 and optical waveguide 3
Surface prepares layer of silicon dioxide film 4, and its thickness is at 0.1 μm to 5 μm；
4. using photoetching process and coating process in conventional semiconductor process, formed in the top of silica membrane 4
Gold or aluminium film needed for making modulator electrode 5, thickness is at 0.1 μm~1 μm；
5. using the thick resist lithography technique in conventional semiconductor process, make modulator electrode 5 and electroplate required thick photoresist
Mask；
6. using the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that step 4 makes, pass through
Plating obtains thickness in 1 μm~30 μm of gold or the metal film such as aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
Embodiment 3
Fig. 6 and Fig. 7 are the 3rd embodiments of low driving voltage lithium niobate electrooptic modulator proposed by the invention, described to be
The phase-modulator of high modulation bandwidth (or high modulation rate) based on LiNbO_3 film.By by lithium niobate crystal chip filming simultaneously
And LiNbO_3 film is made on low dielectric constant substrate chip, be conducive to being lifted the modulation bandwidth of lithium niobate electrooptic modulator
(or modulation rate), and ridge structure is made in LiNbO_3 film, be conducive in the lithium niobate electric light for keeping the present embodiment to provide
While high modulation bandwidth (or high modulation rate) of modulator, the driving voltage of device is reduced.
The lithium niobate electrooptic modulator that the present embodiment is provided includes：Base wafer 6, LiNbO_3 film 7, ridge structure 2,
Optical waveguide 3, modulator electrode 5.
Base wafer 6 is as the hosqt media of LiNbO_3 film 7, the LiNbO_3 film after being lithium niobate crystal chip and being thinned
7 provide a supporting role.Base wafer 6 using with low-k material, such as quartz, or by thermal oxidation,
Silicon wafer surface has a silicon based silicon dioxide chip of one layer of fine and close silica coating, the thickness of base wafer 6 in 0.1mm extremely
2mm。
LiNbO_3 film 7 by by optical grade, twin polishing lithium niobate monocrystal bonding chip in base wafer 6, warp
Cross to be thinned and be made.The crystal of LiNbO_3 film 7 tangentially cuts Y biographies for X, and thickness is at 1 μm to 20 μm.
Ridge structure 2 is made on LiNbO_3 film 7, and its width is at 1 μm to 10 μm, highly at 1 μm to 10 μm.
Optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed at ridge knot
In structure 2.
The travelling-wave-type electrode that modulator electrode 5 is made of metallic films such as gold or aluminium, thickness of electrode is 1 μm to 30 μm, is adjusted
The edge of electrode 5 processed has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 in ridge structure 2
The energy formation of the optical mode of transmission absorbs, and increases the insertion loss of electrooptic modulator.
The manufacture method for the lithium niobate electrooptic modulator that the present embodiment is provided comprises the following steps：
If 1. the selection of base wafer 6 is quartz wafer, the surface of quartz wafer is chemically-mechanicapolish polished；If substrate
The selection of chip 6 is silicon chip, then silicon chip is positioned over into temperature in 900 DEG C~1100 DEG C of diffusion furnace, is filled with oxygen, oxidation 30~
120 minutes, forming surface had the silicon substrate wafer of silica coating of densification, then the surface of the chip is carried out into chemical machinery
Polishing；
2. lithium niobate crystal chip is bonded with the surface of base wafer 6；
3. using conventional grinding, glossing, the lithium niobate crystal chip part in the chip after bonding is thinned, shape
Into LiNbO_3 film 7 of the thickness at 1 μm~20 μm；
4. using ultraprecise diamond blade, ridge structure 2, resulting ridge knot are cut out on LiNbO_3 film 7
The width of structure 2 is at 1 μm to 10 μm, highly at 1 μm to 10 μm；
5. titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process are used, in ridge structure 2
In prepare titanium diffusion optical waveguide 3 or annealed proton exchange optical waveguide 3, optical waveguide 3 be vertical bar structure；
6. using photoetching process and coating process in conventional semiconductor process, formed and made in the top of LiNbO_3 film 7
Gold or aluminium film needed for modulator electrode 5, thickness is at 0.1 μm~1 μm；
7. using the thick resist lithography technique in conventional semiconductor process, make modulator electrode 5 and electroplate required thick photoresist
Mask；
8. using the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that step 6 makes, pass through
Plating obtains thickness in 1 μm~30 μm of gold or the metal film such as aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
Embodiment 4
Fig. 8 and Fig. 9 are the fourth embodiments of low driving voltage lithium niobate electrooptic modulator proposed by the invention, described to be
The intensity modulator of high modulation bandwidth (or high modulation rate) based on LiNbO_3 film.By by lithium niobate crystal chip filming simultaneously
And LiNbO_3 film is made on low dielectric constant substrate chip, be conducive to being lifted the modulation bandwidth of lithium niobate electrooptic modulator
(or modulation rate), and ridge structure is made in LiNbO_3 film, be conducive in the lithium niobate electric light for keeping the present embodiment to provide
While high modulation bandwidth (or high modulation rate) of modulator, the driving voltage of device is reduced.
The lithium niobate electrooptic modulator that the present embodiment is provided includes：Base wafer 6, LiNbO_3 film 7, ridge structure 2,
Optical waveguide 3, modulator electrode 5.
Base wafer 6 is as the hosqt media of LiNbO_3 film 7, the LiNbO_3 film after being lithium niobate crystal chip and being thinned
7 provide a supporting role.Base wafer 6 using with low-k material, such as quartz, or by thermal oxidation,
Silicon wafer surface has a silicon based silicon dioxide chip of one layer of fine and close silica coating, the thickness of base wafer 6 in 0.1mm extremely
2mm。
LiNbO_3 film 7 by by optical grade, twin polishing lithium niobate monocrystal bonding chip in base wafer, pass through
It is thinned and is made.The crystal of LiNbO_3 film 7 tangentially cuts Y biographies for X, and thickness is at 1 μm to 20 μm.
Optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed at ridge structure
In 2.
Ridge structure 2 is made on LiNbO_3 film 7, and its width is at 1 μm to 10 μm, highly at 1 μm to 10 μm.Due to light
Waveguide 3 is MZ structures, wherein have the bent portion of Y-branch shape, therefore when making ridge structure 2, only need to be in optical waveguide 3
Modulation both arms left and right sides carry out accurate cutting, i.e. cutting position and be located at the left side of modulation both arms, middle and right side, make optics ripple
The modulation both arms for leading 3 are formed at ridge structure 2.
The travelling-wave-type electrode that modulator electrode 5 is made of metallic films such as gold or aluminium, thickness of electrode is 1 μm to 30 μm, is adjusted
The edge of electrode 5 processed has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 in ridge structure 2
The energy formation of the optical mode of transmission absorbs, and increases the insertion loss of electrooptic modulator.
The manufacture method for the lithium niobate electrooptic modulator that the present embodiment is provided comprises the following steps：
If 1. the selection of base wafer 6 is quartz wafer, the surface of quartz wafer is chemically-mechanicapolish polished；If substrate
The selection of chip 6 is silicon chip, then silicon chip is positioned over into temperature in 900 DEG C~1100 DEG C of diffusion furnace, is filled with oxygen, oxidation 30~
120 minutes, forming surface had the silicon substrate wafer of silica coating of densification, then the surface of the chip is carried out into chemical machinery
Polishing；
2. lithium niobate crystal chip is bonded with the surface of base wafer 6；
3. using conventional grinding, glossing, the lithium niobate crystal chip part in the chip after bonding is thinned, shape
Into LiNbO_3 film 7 of the thickness at 1 μm~20 μm；
4. titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process are used, in ridge structure 2
In prepare titanium diffusion optical waveguide 3 or annealed proton exchange optical waveguide 3, optical waveguide 3 be MZ structures；
5. using ultraprecise diamond blade, the left and right of the modulation both arms of optical waveguide 3 (MZ structures) carries out superfinishing respectively
Cut closely, obtain ridge structure 2；
6. using photoetching process and coating process in conventional semiconductor process, formed and made in the top of LiNbO_3 film 7
Gold or aluminium film needed for modulator electrode 5, thickness is at 0.1 μm~1 μm；
7. using the thick resist lithography technique in conventional semiconductor process, make modulator electrode 5 and electroplate required thick photoresist
Mask；
8. using the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that step 6 makes, pass through
Plating obtains thickness in 1 μm~30 μm of gold or the metal film such as aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
Described above is only preferred embodiment of the present utility model, it is noted that for the general of the art
For logical technical staff, on the premise of the utility model principle is not departed from, some improvements and modifications can also be made, these change
Enter and retouch and also should be regarded as protection domain of the present utility model.
Claims (4)
1. a kind of low driving voltage lithium niobate electrooptic modulator, it is characterised in that including lithium niobate crystal chip (1), ridge structure
(2), optical waveguide (3), silica membrane (4), modulator electrode (5),
The lithium niobate crystal chip (1) is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm；
The ridge structure (2) is made on lithium niobate crystal chip (1), and its width is at 1 μm to 10 μm, highly at 1 μm to 10 μm；
The optical waveguide (3) is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed at ridge
In structure (2)；
The silica membrane (4) serves the effect for reducing velocity mismatch, lifting impedance matching, and its thickness is at 0.1 μm to 5
μm；
The modulator electrode (5) is the travelling-wave-type electrode being made of gold or aluminum metal film, and thickness of electrode is 1 μm to 30 μm,
The edge of modulator electrode (5) has 1 μm to 10 μm of interval with the edge of ridge structure (2), to avoid modulator electrode (5) to ridge
The energy formation of the optical mode of transmission absorbs in structure (2), increases the insertion loss of electrooptic modulator.
2. a kind of low driving voltage lithium niobate electrooptic modulator, it is characterised in that including：Lithium niobate crystal chip (1), ridge structure
(2), optical waveguide (3), silica membrane (4), modulator electrode (5),
The lithium niobate crystal chip (1) is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm；
The optical waveguide (3) is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed at ridge knot
In structure (2)；
The width of the ridge structure (2) is at 1 μm to 10 μm, highly at 1 μm to 10 μm, because optical waveguide (3) is MZ structures,
Wherein there is the bent portion of Y-branch shape, therefore when making ridge structure (2), only need to be on a modulation both arms left side for optical waveguide (3)
Right side carries out accurate cutting, i.e. cutting position and is located at the left side of modulation both arms, middle and right side, makes the modulation of optical waveguide (3)
Both arms are formed in ridge structure (2)；
The silica membrane (4) serves the effect for reducing velocity mismatch, lifting impedance matching, and its thickness is at 0.1 μm to 5
μm；
The travelling-wave-type electrode that the modulator electrode (5) is made of gold or aluminum metal film, thickness of electrode is 0.1 μm to 2 μm, is adjusted
The edge of electrode (5) processed has 1 μm to 10 μm of interval with the edge of ridge structure (2), to avoid modulator electrode (5) to ridge knot
The energy formation of the optical mode of transmission absorbs in structure (2), increases the insertion loss of electrooptic modulator.
3. a kind of low driving voltage lithium niobate electrooptic modulator, it is characterised in that including base wafer (6), LiNbO_3 film
(7), ridge structure (2), optical waveguide (3), modulator electrode (5)；
The base wafer (6) is as the substrate dielectric of LiNbO_3 film (7), the lithium niobate after being lithium niobate crystal chip and being thinned
Film (7) is provided a supporting role, base wafer (6) using with low-k material, or by thermal oxidation,
Silicon wafer surface has the silicon based silicon dioxide chip of one layer of fine and close silica coating, and the thickness of base wafer (6) is in 0.1mm
To 2mm；
The LiNbO_3 film (7) by by optical grade, twin polishing lithium niobate monocrystal bonding chip in base wafer (6)
On, it is made by being thinned, the crystal of LiNbO_3 film (7) tangentially cuts Y biographies for X, and thickness is at 1 μm to 20 μm；
The ridge structure (2) is made on LiNbO_3 film (7), and its width is at 1 μm to 10 μm, highly at 1 μm to 20 μm；
The optical waveguide (3) is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed at ridge
In structure (2)；
The travelling-wave-type electrode that the modulator electrode (5) is made of metallic film, thickness of electrode is 1 μm to 30 μm, modulator electrode
(5) there is 1 μm to 10 μm of interval at edge and the edge of ridge structure (2), to avoid modulator electrode (5) to ridge structure (2)
The energy formation of the optical mode of middle transmission absorbs, and increases the insertion loss of electrooptic modulator.
4. a kind of low driving voltage lithium niobate electrooptic modulator, it is characterised in that base wafer (6), LiNbO_3 film (7), ridge
Type structure (2), optical waveguide (3), modulator electrode (5),
The base wafer (6) is as the hosqt media of LiNbO_3 film (7), the lithium niobate after being lithium niobate crystal chip and being thinned
Film (7) is provided a supporting role, base wafer (6) using with low-k material, or by thermal oxidation,
Silicon wafer surface has the silicon based silicon dioxide chip of one layer of fine and close silica coating, and the thickness of base wafer (6) is in 0.1mm
To 2mm；
The LiNbO_3 film (7) by by optical grade, twin polishing lithium niobate monocrystal bonding chip in base wafer, warp
Cross to be thinned and be made, the crystal of LiNbO_3 film (7) tangentially cuts Y biographies for X, thickness at 1 μm to 20 μm,
The optical waveguide (3) is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed at ridge knot
In structure (2),
The ridge structure (2) is made on LiNbO_3 film (7), and its width is at 1 μm to 10 μm, highly at 1 μm to 10 μm, by
In optical waveguide (3) be MZ structures, only need to be wherein there is the bent portion of Y-branch shape, therefore when making ridge structure (2)
The modulation both arms left and right sides of optical waveguide (3) carries out accurate cutting, i.e. cutting position and is located at the left side of modulation both arms, the middle and right side
Side, makes the modulation both arms of optical waveguide (3) be formed at ridge structure (2),
The travelling-wave-type electrode that the modulator electrode (5) is made of metallic film, thickness of electrode is 1 μm to 30 μm, modulator electrode
(5) there is 1 μm to 10 μm of interval at edge and the edge of ridge structure (2), to avoid modulator electrode (5) to ridge structure (2)
The energy formation of the optical mode of middle transmission absorbs, and increases the insertion loss of electrooptic modulator.
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| CN108241225A (en) * | 2016-12-23 | 2018-07-03 | 天津领芯科技发展有限公司 | A kind of low driving voltage lithium niobate electrooptic modulator and its manufacturing method |
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