CN110286439B - Method for forming optical waveguide quantum chip on gradient periodic polarization lithium tantalate by adopting proton exchange method - Google Patents
Method for forming optical waveguide quantum chip on gradient periodic polarization lithium tantalate by adopting proton exchange method Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B2006/12045—Lithium tantalate (LiTaO3)
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Abstract
The invention relates to a method for forming an optical waveguide quantum chip on gradually-changed periodically-polarized lithium tantalate by adopting a proton exchange method, which belongs to the field of preparation methods of optoelectronic devices and comprises the following steps: cleaning the gradually-changed periodically-polarized lithium tantalate substrate; sequentially plating a titanium film and a chromium film on the surface of the substrate; carrying out ultraviolet photoetching on the surface of the chromium film to form a mask sample for proton exchange; carrying out proton exchange on the obtained sample at 200-300 ℃ to form a strip-shaped optical waveguide; optically grinding and polishing two end faces perpendicular to the optical waveguide; carrying out a light transmission experiment on the waveguide to test the performance of the optical waveguide; and carrying out optical fiber end face coupling and ultraviolet glue curing on the two polished end faces, and respectively taking the two ends of the optical fiber jumper wire as an input end and an output end to prepare the photonic crystal chip. The invention can prepare the optical waveguide chip with high performance, low transmission loss, micron magnitude and better crystal nonlinearity maintenance, and the crystal nonlinearity tuning range is wide.
Description
Technical Field
The invention relates to a method for forming an optical waveguide quantum chip on gradually-changed periodically-polarized lithium tantalate by adopting a proton exchange method, belonging to the technical field of preparation methods of optoelectronic devices.
Background
The size and operating speed of silicon-based transistors have approached theoretical limits, and to solve this problem, scientists have sought to perform complex calculations faster using photons instead of electrons, and the concept of photonic computers has emerged. However, most of the existing quantum computing technologies require the material to be cooled to about absolute zero (-273.15 ℃), which hinders the progress of quantum computers from theory to practical use. The high-efficiency integrated quantum optical chip can be manufactured by utilizing the optical parameter down-conversion process in the ferroelectric crystal materials lithium tantalate and lithium niobate. The quantum entangled light source, the photon interferometer, the electro-optical modulator and other functional units are integrated on one photon chip, so that the integrated design of entangled photon generation, regulation and detection can be realized, and the stability of functional devices is greatly improved.
The magnesium-doped lithium tantalate crystal has a larger second-order nonlinear coefficient, so that a single crystal with large volume and good optical uniformity can be easily grown, and second-order or even higher-order processing can be performed on optical signals; meanwhile, the coercive field of the magnesium-doped lithium tantalate crystal is low (2000V/mm), and a relatively complex domain switching structure can be prepared. The periodically polarized lithium tantalate crystal can realize quasi-phase matching, and has long nonlinear action length and high conversion efficiency. The optical parameter down-conversion process can be effectively realized by using the periodically polarized lithium tantalate crystal, but the periodically polarized lithium tantalate crystal has a light diffraction phenomenon and has severe requirements on the alignment of a rear-end device.
The optical waveguide can eliminate the optical diffraction phenomenon of signals in the process of material propagation, enhance the optical power density of the signals, and increase the length of nonlinear interaction, and is the most basic element of integrated optics. The existing lithium tantalate waveguide preparation method mainly comprises proton exchange, ion implantation, laser direct writing and the like.
Chinese patent application CN 104678494 a discloses an "optical waveguide device", comprising: a dielectric layer made of an optical material selected from the group consisting of lithium niobate, lithium tantalate, lithium niobate-lithium tantalate, yttrium aluminum garnet, yttrium vanadate, gadolinium potassium tungstate, and yttrium potassium tungstate; and a ridge portion which is provided on the dielectric layer, is composed of tantalum pentoxide, and has a trapezoidal shape when cut along a cross section perpendicular to a propagation direction of light, and the ridge portion is not peeled from the dielectric layer in a tape peeling test based on a JIS H8504 test. However, in the loading method in the patent application, a planar thin film structure of materials such as lithium niobate and lithium tantalate must be formed first, and then a loading type waveguide is formed on the basis, so that the processing steps are complex. And the loading ridge material is amorphous, so that larger waveguide scattering loss is easily caused by improper process control.
Chinese patent application CN 104330938A discloses a quantum light source chip based on optical superlattice and waveguide light path, which adopts the integration of waveguide light path, optical superlattice and electro-optical modulator, the waveguide light path splits the entering classical pumping laser beam by a waveguide beam splitter, the split laser enters the optical superlattice region to perform frequency down-conversion to obtain entangled photon pair, and the entangled photon pair then continues to enter the interferometer to perform quantum interference; the phase of the interferometer is controlled by an electro-optical modulator built in a chip, and several different quantum states are obtained through voltage regulation. The patent application clearly proposes that a quantum light source chip can be prepared in periodically poled lithium niobate by using proton exchange and titanium diffusion means, the coercive field of the lithium niobate is larger than that of lithium tantalate, an optical superlattice structure with gradually changed periods is difficult to form, and the thermal mobility of hot protons in the lithium tantalate is smaller than that of the lithium niobate, so that an exchange process with longer time and higher temperature is needed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method for forming an optical waveguide quantum chip on gradient periodic polarization lithium tantalate by adopting a proton exchange method, so that the optical waveguide chip which has high performance, low transmission loss and micron order and well keeps the nonlinearity of a crystal can be prepared, and the nonlinear tuning range of the crystal is wide.
The invention adopts the following technical scheme:
a method for forming an optical waveguide quantum chip on gradient periodically polarized lithium tantalate by adopting a proton exchange method comprises the following steps:
(1) cleaning the gradually-changed periodically-polarized lithium tantalate substrate to remove inorganic large particles and organic contamination on the surface; the invention adopts the lithium tantalate with gradually changed period, thereby greatly improving the integration density of the quantum chip;
(2) plating a titanium film on the surface of the substrate, wherein the titanium film is used as an intermediate layer, so that the adhesion between the chromium film and the lithium tantalate substrate can be enhanced, and the process stability is improved;
(3) plating a chromium film on the surface of the substrate, wherein the chromium film is used as a main mask layer, and the chromium film has stronger corrosion resistance and can reduce the probability of mask falling in the proton exchange process;
(4) carrying out ultraviolet photoetching on the surface of the chromium film to form a mask sample for proton exchange;
(5) performing proton exchange on the sample obtained in the step (4) at 200-300 ℃ to form a strip-shaped optical waveguide;
(6) optically grinding and polishing two end faces perpendicular to the optical waveguide;
(7) carrying out a light transmission experiment on the waveguide to test the performance of the optical waveguide;
(8) and after the performance test is qualified (test items and qualified standards can be set according to actual needs), performing optical fiber end face coupling and ultraviolet glue curing on the two polished end faces, and respectively taking the two ends of the optical fiber jumper wire as an input end and an output end to prepare the photonic crystal chip.
Preferably, in the step (1), the polarization period of the gradually-changed periodic polarized lithium tantalate is 6-22 microns.
Preferably, in the step (1), the surface of the lithium tantalate substrate is subjected to optical polishing by gradual periodic polarization.
Preferably, the cleaning process in the step (1) is as follows:
(a) washing the substrate by using deionized water to remove large inorganic particles;
(b) ultrasonic cleaning with soapy water to remove organic contamination and inorganic particles, washing with deionized water and blow-drying with nitrogen.
Preferably, in the step (2), the titanium film is plated by an electron beam evaporation plating method, and the adopted electron beam evaporation plating equipment can be commercial general equipment;
preferably, in the step (2), the thickness of the plated titanium film is 8-20 nm.
Preferably, in the step (2), the purity of the titanium film is 99.99%.
Preferably, in the step (3), the chromium film is plated by an electron beam evaporation plating method, and the adopted electron beam evaporation plating equipment can be commercially available commercial general equipment;
preferably, in the step (3), the thickness of the plated chromium film is 60-150 nm.
Preferably, in the step (4), the ultraviolet lithography is an ultraviolet lithography machine, the ultraviolet lithography machine can be a commercial ultraviolet exposure machine, and the photoresist used is a positive photoresist.
Preferably, in the step (5), benzoic acid with a proton source in a hot melting state is adopted in the proton exchange process, the temperature of the proton exchange process is 200 ℃, and the time is 60-600 minutes, and preferably, the proton exchange time is 60-100 minutes.
Preferably, the width of the strip-shaped optical waveguide is 5-12 microns.
Preferably, the benzoic acid used in the proton exchange process is analytically pure (AR).
Preferably, the optical grinding and polishing process in step (6) is as follows:
firstly, respectively carrying out coarse grinding and fine grinding on the brown corundum grinding powder of W14 and the brown corundum grinding powder of W7, then carrying out coarse polishing by using diamond grinding fluid, and finally carrying out fine polishing by using silicon dioxide suspension liquid with the granularity of about 100 +/-10 nm to obtain a smooth and flat end face.
The present invention is not described in detail, and the prior art can be adopted.
The invention has the beneficial effects that:
1) the traditional method for forming the two-dimensional waveguide structure in the lithium tantalate by using the laser direct writing method needs an expensive mechanical motion control system, and has high manufacturing cost, complex structure and low productivity. The ion implantation method requires the use of an expensive and scarce ion implanter; the laser direct writing method needs to use an expensive laser and a mechanical motion control system, is not suitable for large-scale preparation and production, and is easy to attenuate the nonlinear performance of a waveguide region by using the laser direct writing method, so that the performance of a waveguide quantum chip is reduced;
the proton exchange furnace used in the invention is general equipment, has low cost and stable quality, and the proton source used in the proton exchange method is benzoic acid, which is a chemical product that can be used in large scale without limitation, and has low cost and easy large-scale production.
2) The periodically polarized lithium tantalate has a relatively large nonlinear coefficient and a relatively low coercive field. Compared with lithium niobate, the nonlinear coefficient of lithium tantalate is slightly inferior, and in addition, the coercive field of lithium tantalate is lower by one order of magnitude than that of lithium niobate, so that a more refined and complex domain inversion structure can be formed. The gradual change periodic polarization lithium tantalate of the invention is realized by applying electric fields on the upper side and the lower side of a lithium tantalate substrate to cause domain inversion. Compared with the traditional fixed period polarization lithium niobate, the gradual change period polarization lithium tantalate has the characteristics that the down-conversion wavelength can be continuously changed, and the compatibility and the flexibility of the device are greatly improved.
3) The proton exchange method can form a waveguide structure with increased refractive index in the periodically polarized lithium tantalate, the waveguide with increased refractive index can reduce the transmission loss of the waveguide, and the sectional area of the waveguide can reach 20 square microns, so that a more compact and efficient integrated optical device can be formed by utilizing proton exchange.
The invention can prepare the optical waveguide chip with high performance, low transmission loss, micron magnitude and better crystal nonlinearity maintenance, and the crystal nonlinearity tuning range is wide.
Drawings
FIG. 1 is a schematic process flow diagram of a method for forming an optical waveguide quantum chip on a graded periodically poled lithium tantalate by proton exchange according to the present invention;
FIG. 2(a) is a top view of a graded periodically poled lithium tantalate substrate;
FIG. 2(b) is a side view of a graded periodically poled lithium tantalate substrate;
FIG. 3 is a schematic structural diagram of lithium tantalate strip optical waveguide prepared by proton exchange method;
FIG. 4 is a schematic structural diagram of a graded periodically poled lithium tantalate optical waveguide quantum chip in accordance with the present invention;
the device comprises a 1-gradient periodically polarized lithium tantalate substrate, a 2-domain turnover area and a 3-strip optical waveguide.
The specific implementation mode is as follows:
in order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific examples, but not limited thereto, and the present invention is not described in detail and is in accordance with the conventional techniques in the art.
Example 1:
a method for forming an optical waveguide quantum chip on graded periodically poled lithium tantalate by adopting a proton exchange method, as shown in fig. 1, comprising the following steps:
(1) cleaning a substrate 1 of magnesium-doped gradient periodic polarized lithium tantalate (the polarization period is 18-22 microns) with the length of 2 cm and the width of 0.7 cm, and blow-drying a sample by using nitrogen, wherein the substrate structure is shown in figures 2(a) and 2(b), wherein 2(a) is a top view, and 2(b) is a side view;
(2) plating a titanium film with the thickness of 15nm on the surface of the substrate by using an electron beam evaporation coating machine;
(3) plating a chromium film with the thickness of 100nm on the surface of the substrate by using an electron beam evaporation coating machine;
(4) photoetching and forming a strip-shaped optical waveguide pattern with the width of 9 microns on the surface of lithium tantalate by using a commercial ultraviolet exposure machine, wherein the strip-shaped optical waveguide pattern comprises a plurality of strip-shaped optical waveguides 3 as shown in figure 3, and corroding to form a mask sample for proton exchange;
(5) exchanging the mask sample in benzoic acid for 120 minutes at 200 ℃;
(6) optically grinding and polishing two end faces perpendicular to the optical waveguide;
(7) carrying out a light-passing experiment on the waveguide by adopting the prior art to test the performance of the optical waveguide;
(8) and (3) carrying out optical fiber end face coupling and ultraviolet glue curing on the two polished end faces, wherein two ends of the optical fiber jumper are respectively used as an input end and an output end, and preparing the photonic crystal chip as shown in fig. 4.
In this embodiment 1, the coercive field of lithium tantalate is one order of magnitude lower than that of lithium niobate, and a finer and more complex domain inversion structure 2 can be formed.
Example 2:
a method for forming an optical waveguide quantum chip on gradient periodically polarized lithium tantalate by adopting a proton exchange method comprises the following steps:
(1) cleaning a magnesium-doped gradient periodic polarized lithium tantalate (polarization period is 7.5-8.2 microns) substrate with the length of 1.2 cm and the width of 0.7 cm, and drying a sample by using nitrogen;
(2) plating a titanium film with the thickness of 10nm on the surface of the substrate by using an electron beam evaporation coating machine;
(3) plating a chromium film with the thickness of 80nm on the surface of the substrate by using an electron beam evaporation coating machine;
(4) photoetching the surface of lithium tantalate by using a commercial ultraviolet exposure machine to form a 6.6-micrometer-wide strip-shaped optical waveguide pattern, and corroding to form a mask sample for proton exchange;
(5) exchanging the mask sample in benzoic acid for 60 minutes at 200 ℃;
(6) optically grinding and polishing two end faces perpendicular to the optical waveguide;
(7) carrying out a light-passing experiment on the waveguide by adopting the prior art to test the performance of the optical waveguide;
(8) and carrying out optical fiber end face coupling and ultraviolet glue curing on the two polished end faces, and respectively taking the two ends of the optical fiber jumper wire as an input end and an output end to prepare the photonic crystal chip.
Example 3:
a method for forming an optical waveguide quantum chip on gradient periodically polarized lithium tantalate by adopting a proton exchange method comprises the following steps:
(1) cleaning a magnesium-doped gradient periodic polarized lithium tantalate (polarization period is 8.8-9.7 microns) substrate with the length of 1.2 cm and the width of 0.7 cm, and drying a sample by using nitrogen;
(2) plating a titanium film with the thickness of 10nm on the surface of the substrate by using an electron beam evaporation coating machine;
(3) plating a chromium film with the thickness of 70nm on the surface of the substrate by using an electron beam evaporation coating machine;
(4) photoetching the surface of lithium tantalate by using a commercial ultraviolet exposure machine to form a strip-shaped optical waveguide pattern with the width of 5 microns, and corroding to form a mask sample for proton exchange;
(5) exchanging the mask sample in benzoic acid for 50 minutes at 200 ℃;
(6) optically grinding and polishing two end faces perpendicular to the optical waveguide;
(7) carrying out a light-passing experiment on the waveguide by adopting the prior art to test the performance of the optical waveguide;
(8) and carrying out optical fiber end face coupling and ultraviolet glue curing on the two polished end faces, and respectively taking the two ends of the optical fiber jumper wire as an input end and an output end to prepare the photonic crystal chip.
Example 4:
the process was as described in example 1, except that: in step (5), the mask sample was exchanged in benzoic acid at 200 degrees celsius for 100 minutes, all the other steps being the same as in example 1.
Comparative example 1:
chinese invention patent CN 104678494 a discloses an "optical waveguide device".
Comparative example 2:
chinese invention patent CN 104330938A discloses a "quantum light source chip based on optical superlattice and waveguide light path".
Comparative example 3:
the process was as described in example 2, except that: in the step (4), a strip-shaped optical waveguide pattern with a width of 15 micrometers is formed on the surface of lithium tantalate by photoetching with a commercial ultraviolet exposure machine, and a mask sample for proton exchange is formed by etching, wherein the rest is the same as that in the example 2.
Experimental example:
the waveguide devices obtained in examples 1 to 4 and comparative examples 1 to 3 were tested for their relevant performance under the same conditions, and the following performance data were obtained, as shown in table 1:
table 1: performance data sheet
In comparative example 1, a channel waveguide was formed on the surface of a material such as lithium niobate, lithium tantalate, lithium niobate-lithium tantalate, yttrium aluminum garnet, yttrium vanadate, gadolinium potassium tungstate, and yttrium potassium tungstate by a method of forming an optical waveguide using a loading ridge and an underlying dielectric layer. However, in the loading method in comparative example 1, the planar thin film structure of the materials such as lithium niobate and lithium tantalate must be formed first, and then the loading type waveguide is formed on the basis of the planar thin film structure, so that the processing steps are complicated, and then the loading ridge material is amorphous, and large waveguide scattering loss is easily caused by improper process control.
The document of comparative example 2 indicates that the quantum light source chip is prepared in periodically poled lithium niobate by proton exchange and titanium diffusion means, the coercive field of the lithium niobate is larger than that of the lithium tantalate, and an optical superlattice structure with gradually changed periods is difficult to form. The thermal mobility of hot protons in lithium tantalate is less than that of lithium niobate, thus requiring a longer, higher temperature exchange process.
Compared with the comparative example 1, in the embodiments 1 to 4, proton exchange is used as a means for forming the channel waveguide, and a two-dimensional optical waveguide structure can be formed by only one-step thermal proton exchange, so that the waveguide preparation steps are simplified, and the process applicability is improved.
Compared with the comparative example 2, the optical quantum chips prepared in the examples 1 to 4 are polarized in the lithium tantalate with the gradually-changed period, and the polarization period is gradually changed in the lithium tantalate wafer, so that the control wavelength of the optical quantum chips can be flexibly changed, and the mechanical movement or temperature tuning required by changing the wavelength is avoided, so that the structure of the optical quantum chip is more flexible.
As can be seen from Table 1, examples 1 to 4 of the present invention have a wider nonlinear tuning range and a larger optical damage threshold than comparative examples 1 to 3;
examples 1 to 3 are also comparable to the comparative example in terms of transmission loss.
On the premise of ensuring the process applicability, low manufacturing cost, compatibility and flexibility, the photon control wavelength is equivalent to that of comparative examples 1-2, but the invention has wider nonlinear tuning range and larger optical damage threshold.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A method for forming an optical waveguide quantum chip on gradient periodic polarization lithium tantalate by adopting a proton exchange method is characterized by comprising the following steps of:
(1) cleaning the gradually-changed periodically-polarized lithium tantalate substrate to remove inorganic large particles and organic contamination on the surface;
(2) plating a titanium film on the surface of the substrate;
(3) plating a chromium film on the surface of the substrate;
(4) carrying out ultraviolet photoetching on the surface of the chromium film to form a mask sample for proton exchange;
(5) performing proton exchange on the sample obtained in the step (4) at 200-300 ℃ to form a strip-shaped optical waveguide;
(6) optically grinding and polishing two end faces perpendicular to the optical waveguide;
(7) carrying out a light transmission experiment on the waveguide to test the performance of the optical waveguide;
(8) and carrying out optical fiber end face coupling and ultraviolet glue curing on the two polished end faces, and respectively taking the two ends of the optical fiber jumper wire as an input end and an output end to prepare the photonic crystal chip.
2. The method for forming the optical waveguide quantum chip on the gradually-changed periodically-polarized lithium tantalate by adopting the proton exchange method as claimed in claim 1, wherein in the step (1), the polarization period length of the gradually-changed periodically-polarized lithium tantalate is 6-22 microns.
3. The method for forming an optical waveguide quantum chip on the gradually-changed periodically-polarized lithium tantalate by the proton exchange method as claimed in claim 1, wherein in the step (1), the surface of the gradually-changed periodically-polarized lithium tantalate substrate is optically polished.
4. The method for forming the optical waveguide quantum chip on the gradually-changed periodically-polarized lithium tantalate by adopting the proton exchange method as claimed in claim 1, wherein the cleaning process in the step (1) is as follows:
(a) washing the substrate by using deionized water to remove large inorganic particles;
(b) ultrasonic cleaning with soapy water to remove organic contamination and inorganic particles, washing with deionized water and blow-drying with nitrogen.
5. The method for forming the optical waveguide quantum chip on the gradually-changed periodically-polarized lithium tantalate by adopting the proton exchange method as claimed in claim 1, wherein in the step (2), the titanium plating film adopts an electron beam evaporation plating method;
in the step (2), the thickness of the plated titanium film is 8-20 nm.
6. The method for forming the optical waveguide quantum chip on the gradually-changed periodically-polarized lithium tantalate by adopting the proton exchange method as claimed in claim 1, wherein in the step (2), the purity of the titanium film is 99.99%.
7. The method for forming the optical waveguide quantum chip on the gradually-changed periodically-polarized lithium tantalate by adopting the proton exchange method as claimed in claim 1, wherein in the step (3), the chromium plating film adopts an electron beam evaporation plating method;
in the step (3), the thickness of the plated chromium film is 60-150 nm.
8. The method for forming the optical waveguide quantum chip on the gradually-changed periodically-polarized lithium tantalate by adopting the proton exchange method as claimed in claim 1, wherein in the step (4), the ultraviolet lithography adopts an ultraviolet lithography machine, and the photoresist used is a positive photoresist.
9. The method for forming the optical waveguide quantum chip on the gradually-changed periodically-polarized lithium tantalate by adopting the proton exchange method as claimed in claim 1, wherein in the step (5), the proton source is benzoic acid in the proton exchange process, the temperature in the proton exchange process is 200 ℃, and the time is 60-600 minutes;
the width of the strip-shaped optical waveguide is 5-12 microns.
10. The method for forming the optical waveguide quantum chip on the gradually-changed periodically-polarized lithium tantalate by adopting the proton exchange method as claimed in claim 1, wherein the optical grinding and polishing process in the step (6) is as follows:
firstly, respectively carrying out coarse grinding and fine grinding on the brown corundum grinding powder of W14 and the brown corundum grinding powder of W7, then carrying out coarse polishing by using diamond grinding fluid, and finally carrying out fine polishing by using silicon dioxide suspension with the granularity of 100 +/-10 nm to obtain a smooth and flat end face.
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| CN111045150B (en) * | 2019-12-30 | 2021-04-20 | 浙江大学 | Method for realizing continuous production of glass-based ion exchange surface optical waveguide chip |
| CN111627811A (en) * | 2020-06-10 | 2020-09-04 | 电子科技大学 | Lithium tantalate micro-patterning method based on reactive ion etching |
| CN114137660B (en) * | 2021-11-29 | 2023-03-21 | 中国科学院上海微系统与信息技术研究所 | Preparation method and structure of hybrid integrated light quantum chip |
| CN115182052B (en) * | 2022-08-03 | 2023-12-01 | 北京工业大学 | Method for preparing micro-nano device on surface of thin film lithium niobate |
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