CN108241225A - A kind of low driving voltage lithium niobate electrooptic modulator and its manufacturing method - Google Patents
A kind of low driving voltage lithium niobate electrooptic modulator and its manufacturing method Download PDFInfo
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- CN108241225A CN108241225A CN201611204740.2A CN201611204740A CN108241225A CN 108241225 A CN108241225 A CN 108241225A CN 201611204740 A CN201611204740 A CN 201611204740A CN 108241225 A CN108241225 A CN 108241225A
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- lithium niobate
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 137
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 67
- 238000005520 cutting process Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 122
- 230000003287 optical effect Effects 0.000 claims description 114
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 109
- 230000008569 process Effects 0.000 claims description 77
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 48
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 48
- 239000010931 gold Substances 0.000 claims description 48
- 229910052737 gold Inorganic materials 0.000 claims description 48
- 239000000377 silicon dioxide Substances 0.000 claims description 45
- 239000004411 aluminium Substances 0.000 claims description 44
- 229910052782 aluminium Inorganic materials 0.000 claims description 44
- 238000009792 diffusion process Methods 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 36
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 35
- 239000010936 titanium Substances 0.000 claims description 35
- 229910052719 titanium Inorganic materials 0.000 claims description 35
- 235000012239 silicon dioxide Nutrition 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 24
- 238000005516 engineering process Methods 0.000 claims description 22
- 239000012528 membrane Substances 0.000 claims description 20
- 239000010453 quartz Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 239000010432 diamond Substances 0.000 claims description 12
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 12
- 238000003780 insertion Methods 0.000 claims description 12
- 230000037431 insertion Effects 0.000 claims description 12
- 238000001459 lithography Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 238000007517 polishing process Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000006213 oxygenation reaction Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052744 lithium Inorganic materials 0.000 abstract description 14
- 230000005684 electric field Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0311—Structural association of optical elements, e.g. lenses, polarizers, phase plates, with the crystal
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of low driving voltage lithium niobate electrooptic modulators, making ridge waveguide structure on lithium columbate crystal is passed by cutting Y in X, and the electrode structure of electrooptic modulator is made in the both sides of ridge waveguide structure, the electric field between electrooptic modulator electrode structure is allow to be distributed along horizontal direction.Compared with existing lithium niobate electrooptic modulator, modulation efficiency of the electric field to light field can be substantially improved in lithium niobate electrooptic modulator proposed by the present invention, reduce the driving voltage of device.In addition in other schemes, advanced low-k materials can also be used to make ridge waveguide structure as the base wafer of LiNbO_3 film and on LiNbO_3 film, not only the bandwidth of operation of lithium niobate electrooptic modulator can have effectively been promoted, but also the driving voltage of lithium niobate electrooptic modulator can be reduced.A kind of manufacturing method of low driving voltage lithium niobate electrooptic modulator is also provided.
Description
Technical field
The present invention relates to fiber optic communication, coherent light communication, Microwave photonics technical field, more particularly to a kind of low driving
Voltage lithium niobate electrooptic modulator and its manufacturing method.
Background technology
Electrooptic modulator is one of core devices in optical fiber telecommunications system, carries electric signal and is converted to optical signal
Key effect.With the continuous development of the communication technology, using the optical fiber using ultra-low loss as the technology of information transmission medium
Also the technical fields such as coherent light communication and Microwave photonics are applied to.
In fiber optic communication particularly coherent optical communication system, used optical module is in the technique direction towards low-power consumption
Development, and the driving voltage of the reduction inevitable requirement electrooptic modulator of optical module power consumption does and further reduces.In microwave photon
Field, electrooptic modulator are loaded into the core devices of optical signal, the reduction of driving voltage as microwave or millimeter-wave signal
For promoting the link gain of microwave/millimeter wave fiber link, reducing link signal-to-noise ratio, very crucial effect is played.
Lithium columbate crystal is to work as with the waveguiding structure preparation process of its higher electro-optic coefficient, thermal stability and maturation
Most widely employed material in preceding commercialization electrooptic modulator product.However, lithium niobate electrooptic modulator at present there are still
The problem of driving voltage is higher.The higher driving voltage of lithium niobate electrooptic modulator mostlys come from following two aspects：
(1) lithium niobate electrooptic modulator loads the electric field pair on coplanar-electrode structure using coplanar-electrode structure
The modulation efficiency of light field is not high, increases modulator driving voltage；
(2) in order to realize lithium niobate electrooptic modulator, particularly high frequency electrooptic modulator, working frequency or bandwidth carry
Rise, a layer thickness need to be often prepared on lithium niobate surface in 0.2 μm to 2 μm of silicon dioxide film as buffer layer, with reduce microwave/
The effective refractive index of millimeter-wave signal, lifting feature impedance, and the introducing of buffer layer has inevitably led to partial pressure effect, increases
The driving voltage of electrooptic modulator is added.
In order to promote the Electro-optical Modulation efficiency of lithium niobate electrooptic modulator, often selection cuts lithium columbate crystal using Z and makes electricity
Optical modulator cuts making ridge feature optical waveguide on lithium columbate crystal in Z, and electric field is more strongly fettered with realizing, is reduced
The driving voltage of lithium niobate electrooptic modulator.But the electrooptic modulator of lithium columbate crystal making is cut using Z, dc shift is existing
As fairly obvious, large effect is caused to the long-term behaviour stability of device.In addition, it is normal to make ridge feature optical waveguide
Dry etching technology using plasma etching or the wet etch techniques using hydrofluoric acid corrosion, there is manufacture crafts to answer
Miscellaneous, X cuts the problems such as lithium columbate crystal etching or corrosion difficulty are big, the loss of ridge feature optical waveguide transmission is high.
Invention content
The first object of the present invention is to provide a kind of low driving voltage lithium niobate electrooptic modulator and its manufacturing method, lead to
It crosses to cut in X and makes ridge waveguide structure, and the electrode structure of electrooptic modulator is made in ridge waveguide on Y biography lithium columbate crystals
The both sides of structure allow the electric field between electrooptic modulator electrode structure to be distributed along horizontal direction.
To achieve these goals, the first technical solution that the present invention uses is as follows：
A kind of low driving voltage lithium niobate electrooptic modulator, including lithium niobate crystal chip 1, ridge structure 2, optical waveguide 3, two
Silicon oxide film 4, modulator electrode 5,
The lithium niobate crystal chip 1 is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm；
The ridge structure 2 is made on lithium niobate crystal chip 1, and width is at 1 μm to 10 μm, highly at 1 μm to 10 μm；
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed in ridge
In type structure 2；
The silica membrane 4 plays the role of reducing velocity mismatch, promotes impedance matching, and thickness is at 0.1 μm
To 5 μm；
The modulator electrode 5 is using travelling-wave-type electrode made of gold or aluminum metal film, and thickness of electrode is 1 μm to 30 μ
M, the edge of modulator electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to ridge structure
The energy of the optical mode transmitted in 2, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
To achieve these goals, the present invention also provides the second technical solution is as follows：
A kind of low driving voltage lithium niobate electrooptic modulator, which is characterized in that including：Lithium niobate crystal chip 1, ridge structure 2,
Optical waveguide 3, silica membrane 4, modulator electrode 5,
The lithium niobate crystal chip 1 is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm；
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed in ridge
In structure 2；
The width of ridge structure 2 is at 1 μm to 10 μm, highly at 1 μm to 10 μm, since optical waveguide 3 is MZ structures, wherein
There is the bending part of Y-branch shape, therefore when making ridge structure 2, need to only be carried out in the modulation both arms left and right sides of optical waveguide 3
Accurate cutting, i.e. cutting position are located at left side, centre and the right side of modulation both arms, are formed in the modulation both arms of optical waveguide 3
In ridge structure 2；
The silica membrane 4 plays the role of reducing velocity mismatch, promotes impedance matching, and thickness is at 0.1 μm
To 5 μm；
For the modulator electrode 5 using travelling-wave-type electrode made of gold or aluminum metal film, thickness of electrode is 1 μm to 30 μm,
The edge of modulator electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to ridge structure 2
The energy of the optical mode of middle transmission, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
Compared with existing lithium niobate electrooptic modulator, the niobic acid of the first technical solution and the second technical solution proposition of the invention
Modulation efficiency of the electric field to light field can be substantially improved in lithium electrooptic modulator, reduce the driving voltage of device.
To realize above-mentioned first technical solution, present invention also provides a kind of manufacturing method of first technical solution,
A kind of manufacturing method of low driving voltage lithium niobate electrooptic modulator, includes the following steps：
Step 1. uses titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process, in lithium niobate
Titanium diffusion optical waveguide 3 is prepared in chip 1 or annealed proton exchanges optical waveguide 3, optical waveguide 3 is vertical bar structure；
Step 2. uses ultraprecise diamond blade, carries out ultraprecise cutting respectively in the left and right of optical waveguide 3, obtains ridge
Type structure 2；
Step 3. uses sputtering technology or pecvd process, in the lithium niobate crystal for including ridge structure 2 and optical waveguide 3
The surface of piece 1 prepares layer of silicon dioxide film 4, and thickness is at 0.1 μm to 5 μm；
Step 4. is using the photoetching process and coating process in conventional semiconductor process, in the top of silica membrane 4
The gold or aluminium film needed for modulator electrode 5 are formed, thickness is at 0.1 μm~1 μm；
Step 5. is made modulator electrode 5 and required thick light is electroplated using the thick resist lithography technique in conventional semiconductor process
Photoresist mask；
Step 6. uses the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that are made in step 4,
Thickness is obtained in the metal films such as 1 μm~30 μm of gold or aluminium by plating, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
To realize above-mentioned second technical solution, present invention also provides a kind of manufacturing method of second technical solution,
A kind of manufacturing method of low driving voltage lithium niobate electrooptic modulator, includes the following steps：
Titanium diffusion optical waveguide 3 is prepared in lithium niobate crystal chip 1 or annealed proton exchanges optical waveguide 3, optical waveguide 3 is MZ
Structure；
Step 2. use ultraprecise diamond blade, optical waveguide 3 (MZ structures) modulation both arms left and right respectively into
Row ultraprecise is cut, and obtains ridge structure 2；
Step 3. uses sputtering technology or pecvd process, in the lithium niobate crystal for including ridge structure 2 and optical waveguide 3
The surface of piece 1 prepares layer of silicon dioxide film 4, and thickness is at 0.1 μm to 5 μm；
Step 4. is using the photoetching process and coating process in conventional semiconductor process, in the top of silica membrane 4
The gold or aluminium film needed for modulator electrode 5 are formed, thickness is at 0.1 μm~1 μm；
Step 5. is made modulator electrode 5 and required thick light is electroplated using the thick resist lithography technique in conventional semiconductor process
Photoresist mask；
Step 6. uses the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that are made in step 4,
Thickness is obtained in the metal films such as 1 μm~30 μm of gold or aluminium by plating, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
The above method makes ridge waveguide structure, this manufacturing method using ultraprecise cutting technique on lithium columbate crystal
Without technical difficulty it is big, manufacture dry etching or wet etching technique of high cost, prepared lithium niobate ridge waveguide
Structure has the distinguishing features such as depth-to-width ratio is high, loss is low, preparation method is simple.
The second object of the present invention is to provide a kind of low driving voltage lithium niobate electrooptic modulator, by cutting Y biography niobiums in X
Ridge waveguide structure is made on sour lithium film, the electrode structure of electrooptic modulator is made in the both sides of ridge waveguide structure, and
Using base wafer of the advanced low-k materials as LiNbO_3 film, lithium niobate electrooptic modulator both can be effectively promoted
Bandwidth of operation, and the driving voltage of lithium niobate electrooptic modulator can be reduced.
To realize the purpose of the second technical solution, the present invention provides third technical solutions：A kind of low driving voltage niobic acid
Lithium electrooptic modulator, including base wafer 6, LiNbO_3 film 7, ridge structure 2, optical waveguide 3, modulator electrode 5；
Hosqt media of the base wafer 6 as LiNbO_3 film 7, the lithium niobate after being lithium niobate crystal chip and being thinned
Film 7 provides a supporting role, and base wafer 6 is using the material with low-k, such as quartz or by thermal oxide
Reason, the silicon based silicon dioxide chip for having one layer of fine and close silica coating in silicon wafer surface, the thickness of base wafer 6 exist
0.1mm to 2mm；
The LiNbO_3 film 7 by by the lithium niobate monocrystal bonding chip of optical grade, twin polishing in base wafer 6
On, it is made by being thinned, the crystal of LiNbO_3 film 7 tangentially cuts Y biographies for X, and thickness is at 1 μm to 20 μm；
The ridge structure 2 is made on LiNbO_3 film 7, and width is at 1 μm to 10 μm, highly at 1 μm to 20 μm；
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed in ridge
In type structure 2；
For the modulator electrode 5 using travelling-wave-type electrode made of the metallic films such as gold or aluminium, thickness of electrode is 1 μm to 30 μ
M, the edge of modulator electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to ridge structure
The energy of the optical mode transmitted in 2, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
To realize the purpose of the second technical solution, the present invention also provides the 4th technical solutions：A kind of low driving voltage niobium
Sour lithium electrooptic modulator, base wafer 6, LiNbO_3 film 7, ridge structure 2, optical waveguide 3, modulator electrode 5,
Hosqt media of the base wafer 6 as LiNbO_3 film 7, the lithium niobate after being lithium niobate crystal chip and being thinned
Film 7 provides a supporting role.Base wafer 6 is using the material with low-k, such as quartz or by thermal oxide
Reason, the silicon based silicon dioxide chip for having one layer of fine and close silica coating in silicon wafer surface, the thickness of base wafer 6 exist
0.1mm to 2mm；
The LiNbO_3 film 7 by by the lithium niobate monocrystal bonding chip of optical grade, twin polishing in base wafer,
Be made by being thinned, the crystal of LiNbO_3 film 7 tangentially cuts Y biographies for X, thickness at 1 μm to 20 μm,
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed in ridge
In structure 2,
The ridge structure 2 is made on LiNbO_3 film 7, and width is at 1 μm to 10 μm, highly at 1 μm to 2 μm.By
In optical waveguide 3 be MZ structures, need to be in optics wherein have the bending part of Y-branch shape, therefore when making ridge structure 2
The modulation both arms left and right sides of waveguide 3 carries out accurate cutting, i.e. cutting position is located at left side, centre and the right side of modulation both arms, makes
The modulation both arms of optical waveguide 3 are formed in ridge structure 2,
For the modulator electrode 5 using travelling-wave-type electrode made of the metallic films such as gold or aluminium, thickness of electrode is 1 μm to 30 μ
M, the edge of modulator electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to ridge structure
The energy of the optical mode transmitted in 2, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
In order to realize third technical solution, the present invention provides a kind of manufactures of low driving voltage lithium niobate electrooptic modulator
Method includes the following steps：
If 6 selected as quartz wafer of step 1. base wafer, the surface of quartz wafer is chemically-mechanicapolish polished；If
Silicon chip is then positioned over temperature in 900 DEG C~1100 DEG C of diffusion furnace, is filled with oxygen by 6 selected as silicon chip of base wafer, oxidation
30~120 minutes, forming surface had the silicon substrate wafer of fine and close silica coating, then the surface of the chip is carried out chemistry
Mechanical polishing；
Lithium niobate crystal chip is bonded by step 2. with the surface of base wafer 6；
Step 3. is subtracted the lithium niobate crystal chip part in the chip after bonding using conventional grinding, polishing process
It is thin, form LiNbO_3 film 7 of the thickness at 1 μm~20 μm；
Step 4. uses ultraprecise diamond blade, and ridge structure 2, obtained ridge are cut on LiNbO_3 film 7
The width of type structure 2 is at 1 μm to 10 μm, highly at 1 μm to 10 μm；
Step 5. uses titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process, in ridge knot
Titanium diffusion optical waveguide 3 is prepared in structure 2 or annealed proton exchanges optical waveguide 3, optical waveguide 3 is vertical bar structure；
Step 6. is formed using photoetching process and coating process in conventional semiconductor process above LiNbO_3 film 7
The gold or aluminium film needed for modulator electrode 5 are made, thickness is at 0.1 μm~1 μm；
Step 7. is made modulator electrode 5 and required thick light is electroplated using the thick resist lithography technique in conventional semiconductor process
Photoresist mask；
Step 8. uses the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that are made in step 6,
Thickness is obtained in the metal films such as 1 μm~30 μm of gold or aluminium by plating, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
In order to realize the 4th technical solution, the present invention provides a kind of manufactures of low driving voltage lithium niobate electrooptic modulator
Method includes the following steps：
If 6 selected as quartz wafer of step 1. base wafer, the surface of quartz wafer is chemically-mechanicapolish polished；If
Silicon chip is then positioned over temperature in 900 DEG C~1100 DEG C of diffusion furnace, is filled with oxygen by 6 selected as silicon chip of base wafer, oxidation
30~120 minutes, forming surface had the silicon substrate wafer of fine and close silica coating, then the surface of the chip is carried out chemistry
Mechanical polishing；
Lithium niobate crystal chip is bonded by step 2. with the surface of base wafer 6；
Step 3. is subtracted the lithium niobate crystal chip part in the chip after bonding using conventional grinding, polishing process
It is thin, form LiNbO_3 film 7 of the thickness at 1 μm~20 μm；
Step 4. uses titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process, in ridge knot
Titanium diffusion optical waveguide 3 is prepared in structure 2 or annealed proton exchanges optical waveguide 3, optical waveguide 3 is MZ structures；
Step 5. uses ultraprecise diamond blade, and the left and right of the modulation both arms of optical waveguide 3 (MZ structures) carries out respectively
Ultraprecise is cut, and obtains ridge structure 2；
Step 6. is formed using photoetching process and coating process in conventional semiconductor process above LiNbO_3 film 7
The gold or aluminium film needed for modulator electrode 5 are made, thickness is at 0.1 μm~1 μm；
Step 7. is made modulator electrode 5 and required thick light is electroplated using the thick resist lithography technique in conventional semiconductor process
Photoresist mask；
Step 8. uses the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that are made in step 6,
Thickness is obtained in the metal films such as 1 μm~30 μm of gold or aluminium by plating, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
The above method makes ridge waveguide structure, this manufacturing method using ultraprecise cutting technique on LiNbO_3 film
Without technical difficulty it is big, manufacture dry etching or wet etching technique of high cost, prepared LiNbO_3 film ridge
Waveguiding structure has the distinguishing features such as depth-to-width ratio is high, loss is low, preparation method is simple.
Description of the drawings
Fig. 1 show the chip profile schematic diagram of existing lithium niobate electrooptic modulator；
Fig. 2 show the chip profile schematic diagram of lithium niobate electrooptic modulator embodiment one proposed by the present invention；
Fig. 3 show the chip structure schematic diagram of lithium niobate electrooptic modulator embodiment one proposed by the present invention；
Fig. 4 show the chip profile schematic diagram of lithium niobate electrooptic modulator embodiment two proposed by the present invention；
Fig. 5 show the chip structure schematic diagram of lithium niobate electrooptic modulator embodiment two proposed by the present invention；
Fig. 6 show the chip profile schematic diagram of lithium niobate electrooptic modulator embodiment three proposed by the present invention；
Fig. 7 show the chip structure schematic diagram of lithium niobate electrooptic modulator embodiment three proposed by the present invention；
Fig. 8 show the chip profile schematic diagram of lithium niobate electrooptic modulator example IV proposed by the present invention；
Fig. 9 show the chip structure schematic diagram of lithium niobate electrooptic modulator example IV proposed by the present invention；
In figure, the title corresponding to each label is respectively：1. lithium niobate crystal chip；2. ridge structure；3. optical waveguide；4.
Silica membrane；5. modulator electrode；6. base wafer；7. LiNbO_3 film.
Specific embodiment
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that described herein
Specific embodiment be only used to explain the present invention, be not intended to limit the present invention.
It should be noted that " connection " described herein and the word for expressing " connection ", as " being connected ",
" connected " etc. was both directly connected to including a certain component and another component, and also passed through other component and another portion including a certain component
Part is connected.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, component or module, component and/or combination thereof.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.
Embodiment 1
Fig. 2 and Fig. 3 is the first embodiment of low driving voltage lithium niobate electrooptic modulator proposed by the invention, described to be
The lithium niobate phase modulator of high modulation bandwidth (or high modulation rate).For the niobic acid of high modulation bandwidth (or high modulation rate)
Lithium electrooptic modulator frequently with travelling-wave-type electrode structure, and need to often add in silica membrane as buffer layer to realize speed
Matching and impedance matching improve device modulation bandwidth (or modulation rate).
The lithium niobate electrooptic modulator that the present embodiment is provided includes：Lithium niobate crystal chip 1, ridge structure 2, optical waveguide 3,
Silica membrane 4, modulator electrode 5.
Lithium niobate crystal chip 1 is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm.
Ridge structure 2 is made on lithium niobate crystal chip 1, and width is at 1 μm to 10 μm, highly at 1 μm to 10 μm.
Optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed in ridge knot
In structure 2.
Silica membrane 4 plays the role of reducing velocity mismatch, promotes impedance matching, and thickness is at 0.1 μm to 5 μ
m。
Modulator electrode 5 is using travelling-wave-type electrode made of the metallic films such as gold or aluminium, and thickness of electrode is 1 μm to 2 μm, modulation
The edge of electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to being passed in ridge structure 2
The energy of defeated optical mode, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
The manufacturing method for the lithium niobate electrooptic modulator that the present embodiment is provided includes the following steps：
1. titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process are used, in lithium niobate crystal chip
Titanium diffusion optical waveguide 3 is prepared in 1 or annealed proton exchanges optical waveguide 3, optical waveguide 3 is vertical bar structure；
2. using ultraprecise diamond blade, ultraprecise cutting is carried out respectively in the left and right of optical waveguide 3, obtains ridge knot
Structure 2；
3. using sputtering technology or pecvd process, including the lithium niobate crystal chip 1 of ridge structure 2 and optical waveguide 3
Surface prepares layer of silicon dioxide film 4, and thickness is at 0.1 μm to 5 μm；
4. using photoetching process and coating process in conventional semiconductor process, formed in the top of silica membrane 4
The gold or aluminium film needed for modulator electrode 5 are made, thickness is at 0.1 μm~1 μm；
5. using the thick resist lithography technique in conventional semiconductor process, make modulator electrode 5 and required thick photoresist is electroplated
Mask；
6. using the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that are made in step 4, pass through
Plating obtains thickness in the metal films such as 1 μm~30 μm of gold or aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
Embodiment 2
Fig. 4 and Fig. 5 is the second embodiment of low driving voltage lithium niobate electrooptic modulator proposed by the invention, described to be
The lithium niobate intensity modulator of high modulation bandwidth (or high modulation rate).For the niobic acid of high modulation bandwidth (or high modulation rate)
Lithium electrooptic modulator frequently with travelling-wave-type electrode structure, and need to often add in silica membrane as buffer layer to realize speed
Matching and impedance matching improve device modulation bandwidth (or modulation rate).
The lithium niobate electrooptic modulator that the present embodiment is provided includes：Lithium niobate crystal chip 1, ridge structure 2, optical waveguide 3,
Silica membrane 4, modulator electrode 5.
Lithium niobate crystal chip 1 is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm.
Optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed in ridge structure
In 2.
The width of ridge structure 2 is at 1 μm to 10 μm, highly at 1 μm to 10 μm.Since optical waveguide 3 is MZ structures, wherein
There is the bending part of Y-branch shape, therefore when making ridge structure 2, need to only be carried out in the modulation both arms left and right sides of optical waveguide 3
Accurate cutting, i.e. cutting position are located at left side, centre and the right side of modulation both arms, and the modulation both arms of optical waveguide 3 is made to form ridge
Type structure 2.
Silica membrane 4 plays the role of reducing velocity mismatch, promotes impedance matching, and thickness is at 0.1 μm to 5 μ
m。
Modulator electrode 5 is using travelling-wave-type electrode made of the metallic films such as gold or aluminium, and thickness of electrode is 1 μm to 2 μm, modulation
The edge of electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to being passed in ridge structure 2
The energy of defeated optical mode, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
The manufacturing method for the lithium niobate electrooptic modulator that the present embodiment is provided includes the following steps：
1. titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process are used, in lithium niobate crystal chip
Titanium diffusion optical waveguide 3 is prepared in 1 or annealed proton exchanges optical waveguide 3, optical waveguide 3 is MZ structures；
2. using ultraprecise diamond blade, the left and right of the modulation both arms of optical waveguide 3 (MZ structures) carries out superfinishing respectively
It cuts closely, obtains ridge structure 2；
3. using sputtering technology or pecvd process, including the lithium niobate crystal chip 1 of ridge structure 2 and optical waveguide 3
Surface prepares layer of silicon dioxide film 4, and thickness is at 0.1 μm to 5 μm；
4. using photoetching process and coating process in conventional semiconductor process, formed in the top of silica membrane 4
The gold or aluminium film needed for modulator electrode 5 are made, thickness is at 0.1 μm~1 μm；
5. using the thick resist lithography technique in conventional semiconductor process, make modulator electrode 5 and required thick photoresist is electroplated
Mask；
6. using the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that are made in step 4, pass through
Plating obtains thickness in the metal films such as 1 μm~30 μm of gold or aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
Embodiment 3
Fig. 6 and Fig. 7 is the 3rd embodiment of low driving voltage lithium niobate electrooptic modulator proposed by the invention, described to be
The phase-modulator of high modulation bandwidth (or high modulation rate) based on LiNbO_3 film.By by lithium niobate crystal chip filming simultaneously
And LiNbO_3 film is made on low dielectric constant substrate chip, be conducive to be promoted the modulation bandwidth of lithium niobate electrooptic modulator
(or modulation rate), and ridge structure is made in LiNbO_3 film, be conducive to keeping lithium niobate electric light provided in this embodiment
While high modulation bandwidth (or high modulation rate) of modulator, the driving voltage of device is reduced.
The lithium niobate electrooptic modulator that the present embodiment is provided includes：Base wafer 6, LiNbO_3 film 7, ridge structure 2,
Optical waveguide 3, modulator electrode 5.
Hosqt media of the base wafer 6 as LiNbO_3 film 7, the LiNbO_3 film after being lithium niobate crystal chip and being thinned
7 provide a supporting role.Base wafer 6 using with low-k material, such as quartz or by thermal oxidation,
Silicon wafer surface has a silicon based silicon dioxide chip of one layer of fine and close silica coating, the thickness of base wafer 6 in 0.1mm extremely
2mm。
LiNbO_3 film 7 is by the way that the lithium niobate monocrystal bonding chip of optical grade, twin polishing in base wafer 6, is passed through
It crosses to be thinned and be made.The crystal of LiNbO_3 film 7 tangentially cuts Y biographies for X, and thickness is at 1 μm to 20 μm.
Ridge structure 2 is made on LiNbO_3 film 7, and width is at 1 μm to 10 μm, highly at 1 μm to 10 μm.
Optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed in ridge knot
In structure 2.
For modulator electrode 5 using travelling-wave-type electrode made of the metallic films such as gold or aluminium, thickness of electrode is 1 μm to 30 μm, is adjusted
The edge of electrode 5 processed has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 in ridge structure 2
The energy of the optical mode of transmission, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
The manufacturing method for the lithium niobate electrooptic modulator that the present embodiment is provided includes the following steps：
1. if 6 selected as quartz wafer of base wafer, the surface of quartz wafer is chemically-mechanicapolish polished；If substrate
Silicon chip is then positioned over temperature in 900 DEG C~1100 DEG C of diffusion furnace by 6 selected as silicon chip of chip, is filled with oxygen, and oxidation 30~
120 minutes, forming surface had the silicon substrate wafer of fine and close silica coating, then the surface of the chip is carried out chemical machinery
Polishing；
2. lithium niobate crystal chip is bonded with the surface of base wafer 6；
3. using conventional grinding, polishing process, the lithium niobate crystal chip part in the chip after bonding is thinned, shape
LiNbO_3 film 7 into thickness at 1 μm~20 μm；
4. using ultraprecise diamond blade, ridge structure 2, obtained ridge knot are cut on LiNbO_3 film 7
The width of structure 2 is at 1 μm to 10 μm, highly at 1 μm to 10 μm；
5. titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process are used, in ridge structure 2
In prepare titanium diffusion optical waveguide 3 or annealed proton exchange optical waveguide 3, optical waveguide 3 be vertical bar structure；
6. using photoetching process and coating process in conventional semiconductor process, formed above LiNbO_3 film 7
Gold or aluminium film needed for modulator electrode 5, thickness is at 0.1 μm~1 μm；
7. using the thick resist lithography technique in conventional semiconductor process, make modulator electrode 5 and required thick photoresist is electroplated
Mask；
8. using the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that are made in step 6, pass through
Plating obtains thickness in the metal films such as 1 μm~30 μm of gold or aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
Embodiment 4
Fig. 8 and Fig. 9 is the fourth embodiment of low driving voltage lithium niobate electrooptic modulator proposed by the invention, described to be
The intensity modulator of high modulation bandwidth (or high modulation rate) based on LiNbO_3 film.By by lithium niobate crystal chip filming simultaneously
And LiNbO_3 film is made on low dielectric constant substrate chip, be conducive to be promoted the modulation bandwidth of lithium niobate electrooptic modulator
(or modulation rate), and ridge structure is made in LiNbO_3 film, be conducive to keeping lithium niobate electric light provided in this embodiment
While high modulation bandwidth (or high modulation rate) of modulator, the driving voltage of device is reduced.
The lithium niobate electrooptic modulator that the present embodiment is provided includes：Base wafer 6, LiNbO_3 film 7, ridge structure 2,
Optical waveguide 3, modulator electrode 5.
Hosqt media of the base wafer 6 as LiNbO_3 film 7, the LiNbO_3 film after being lithium niobate crystal chip and being thinned
7 provide a supporting role.Base wafer 6 using with low-k material, such as quartz or by thermal oxidation,
Silicon wafer surface has a silicon based silicon dioxide chip of one layer of fine and close silica coating, the thickness of base wafer 6 in 0.1mm extremely
2mm。
LiNbO_3 film 7 is by the way that the lithium niobate monocrystal bonding chip of optical grade, twin polishing in base wafer, is passed through
It is thinned and is made.The crystal of LiNbO_3 film 7 tangentially cuts Y biographies for X, and thickness is at 1 μm to 20 μm.
Optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed in ridge structure
In 2.
Ridge structure 2 is made on LiNbO_3 film 7, and width is at 1 μm to 10 μm, highly at 1 μm to 10 μm.Due to light
Waveguide 3 is MZ structures, wherein have the bending part of Y-branch shape, therefore when making ridge structure 2, it only need to be in optical waveguide 3
Modulation both arms left and right sides carry out accurate cutting, i.e., cutting position be located at modulation both arms left side, centre and right side, make optics wave
The modulation both arms for leading 3 are formed in ridge structure 2.
For modulator electrode 5 using travelling-wave-type electrode made of the metallic films such as gold or aluminium, thickness of electrode is 1 μm to 30 μm, is adjusted
The edge of electrode 5 processed has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 in ridge structure 2
The energy of the optical mode of transmission, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
The manufacturing method for the lithium niobate electrooptic modulator that the present embodiment is provided includes the following steps：
1. if 6 selected as quartz wafer of base wafer, the surface of quartz wafer is chemically-mechanicapolish polished；If substrate
Silicon chip is then positioned over temperature in 900 DEG C~1100 DEG C of diffusion furnace by 6 selected as silicon chip of chip, is filled with oxygen, and oxidation 30~
120 minutes, forming surface had the silicon substrate wafer of fine and close silica coating, then the surface of the chip is carried out chemical machinery
Polishing；
2. lithium niobate crystal chip is bonded with the surface of base wafer 6；
3. using conventional grinding, polishing process, the lithium niobate crystal chip part in the chip after bonding is thinned, shape
LiNbO_3 film 7 into thickness at 1 μm~20 μm；
4. titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process are used, in ridge structure 2
In prepare titanium diffusion optical waveguide 3 or annealed proton exchange optical waveguide 3, optical waveguide 3 be MZ structures；
5. using ultraprecise diamond blade, the left and right of the modulation both arms of optical waveguide 3 (MZ structures) carries out superfinishing respectively
It cuts closely, obtains ridge structure 2；
6. using photoetching process and coating process in conventional semiconductor process, formed above LiNbO_3 film 7
Gold or aluminium film needed for modulator electrode 5, thickness is at 0.1 μm~1 μm；
7. using the thick resist lithography technique in conventional semiconductor process, make modulator electrode 5 and required thick photoresist is electroplated
Mask；
8. using the electroplating technology in conventional semiconductor process, on the basis of the gold or aluminium film that are made in step 6, pass through
Plating obtains thickness in the metal films such as 1 μm~30 μm of gold or aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
The above is only the preferred embodiment of the present invention, it is noted that for the common skill of the art
For art personnel, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of low driving voltage lithium niobate electrooptic modulator, which is characterized in that including lithium niobate crystal chip 1, ridge structure 2, light
Waveguide 3, silica membrane 4, modulator electrode 5 are learned,
The lithium niobate crystal chip 1 is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm；
The ridge structure 2 is made on lithium niobate crystal chip 1, and width is at 1 μm to 10 μm, highly at 1 μm to 10 μm；
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed in ridge knot
In structure 2；
The silica membrane 4 plays the role of reducing velocity mismatch, promotes impedance matching, and thickness is at 0.1 μm to 5 μ
m；
The modulator electrode 5 is using travelling-wave-type electrode made of gold or aluminum metal film, and thickness of electrode is 1 μm to 30 μm, is adjusted
The edge of electrode 5 processed has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 in ridge structure 2
The energy of the optical mode of transmission, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
2. a kind of manufacturing method of low driving voltage lithium niobate electrooptic modulator, which is characterized in that include the following steps：
Step 1. uses titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process, in lithium niobate crystal chip
Titanium diffusion optical waveguide 3 is prepared in 1 or annealed proton exchanges optical waveguide 3, optical waveguide 3 is vertical bar structure；
Step 2. uses ultraprecise diamond blade, carries out ultraprecise cutting respectively in the left and right of optical waveguide 3, obtains ridge knot
Structure 2；
Step 3. uses sputtering technology or pecvd process, is including the lithium niobate crystal chip 1 of ridge structure 2 and optical waveguide 3
Surface prepares layer of silicon dioxide film 4, and thickness is at 0.1 μm to 5 μm；
Step 4. is formed using photoetching process and coating process in conventional semiconductor process in the top of silica membrane 4
The gold or aluminium film needed for modulator electrode 5 are made, thickness is at 0.1 μm~1 μm；
Step 5. is made modulator electrode 5 and is carried out that required thick light is electroplated using the thick resist lithography technique in conventional semiconductor process
Photoresist mask；
Step 6. on the basis of the gold of step 4 making or aluminium film, is passed through using the electroplating technology in conventional semiconductor process
Plating obtains thickness in the metal films such as 1 μm~30 μm of gold or aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
3. a kind of low driving voltage lithium niobate electrooptic modulator, which is characterized in that including：Lithium niobate crystal chip 1, ridge structure 2, light
Waveguide 3, silica membrane 4, modulator electrode 5 are learned,
The lithium niobate crystal chip 1 is lithium niobate monocrystal material, and crystal tangentially cuts Y biographies for X, and thickness is in 0.1mm to 2mm；
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed in ridge structure
In 2；
The width of the ridge structure 2 is at 1 μm to 10 μm, highly at 1 μm to 10 μm, since optical waveguide 3 is MZ structures, wherein
There is the bending part of Y-branch shape, therefore when making ridge structure 2, need to only be carried out in the modulation both arms left and right sides of optical waveguide 3
Accurate cutting, i.e. cutting position are located at left side, centre and the right side of modulation both arms, are formed in the modulation both arms of optical waveguide 3
In ridge structure 2；
The silica membrane 4 plays the role of reducing velocity mismatch, promotes impedance matching, and thickness is at 0.1 μm to 5 μ
m；
The modulator electrode 5 is using travelling-wave-type electrode made of gold or aluminum metal film, and thickness of electrode is 0.1 μm to 2 μm, modulation
The edge of electrode 5 has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 to being passed in ridge structure 2
The energy of defeated optical mode, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
4. a kind of manufacturing method of low driving voltage lithium niobate electrooptic modulator, which is characterized in that include the following steps：
Step 1. uses titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process, in lithium niobate crystal chip
Titanium diffusion optical waveguide 3 is prepared in 1 or annealed proton exchanges optical waveguide 3, optical waveguide 3 is MZ structures；
Step 2. uses ultraprecise diamond blade, is surpassed respectively in the left and right of the modulation both arms of optical waveguide 3 (MZ structures)
Accurate cutting obtains ridge structure 2；
Step 3. uses sputtering technology or pecvd process, is including the lithium niobate crystal chip 1 of ridge structure 2 and optical waveguide 3
Surface prepares layer of silicon dioxide film 4, and thickness is at 0.1 μm to 5 μm；
Step 4. is formed using photoetching process and coating process in conventional semiconductor process in the top of silica membrane 4
The gold or aluminium film needed for modulator electrode 5 are made, thickness is at 0.1 μm~1 μm；
Step 5. is made modulator electrode 5 and is carried out that required thick light is electroplated using the thick resist lithography technique in conventional semiconductor process
Photoresist mask；
Step 6. on the basis of the gold of step 4 making or aluminium film, is passed through using the electroplating technology in conventional semiconductor process
Plating obtains thickness in the metal films such as 1 μm~30 μm of gold or aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
5. a kind of low driving voltage lithium niobate electrooptic modulator, which is characterized in that including base wafer 6, LiNbO_3 film 7, ridge
Type structure 2, optical waveguide 3, modulator electrode 5；
Substrate dielectric of the base wafer 6 as LiNbO_3 film 7, the LiNbO_3 film after being lithium niobate crystal chip and being thinned
7 provide a supporting role, base wafer 6 using with low-k material, such as quartz or by thermal oxidation,
Silicon wafer surface has a silicon based silicon dioxide chip of one layer of fine and close silica coating, the thickness of base wafer 6 in 0.1mm extremely
2mm；
The LiNbO_3 film 7 is by the way that the lithium niobate monocrystal bonding chip of optical grade, twin polishing in base wafer 6, is passed through
It crosses to be thinned and be made, the crystal of LiNbO_3 film 7 tangentially cuts Y biographies for X, and thickness is at 1 μm to 20 μm；
The ridge structure 2 is made on LiNbO_3 film 7, and width is at 1 μm to 10 μm, highly at 1 μm to 20 μm；
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is vertical bar structure, is formed in ridge knot
In structure 2；
For the modulator electrode 5 using travelling-wave-type electrode made of the metallic films such as gold or aluminium, thickness of electrode is 1 μm to 30 μm, is adjusted
The edge of electrode 5 processed has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 in ridge structure 2
The energy of the optical mode of transmission, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
6. a kind of manufacturing method of low driving voltage lithium niobate electrooptic modulator, which is characterized in that include the following steps：
If 6 selected as quartz wafer of step 1. base wafer, the surface of quartz wafer is chemically-mechanicapolish polished；If substrate
Silicon chip is then positioned over temperature in 900 DEG C~1100 DEG C of diffusion furnace by 6 selected as silicon chip of chip, is filled with oxygen, and oxidation 30~
120 minutes, forming surface had the silicon substrate wafer of fine and close silica coating, then the surface of the chip is carried out chemical machinery
Polishing；
Lithium niobate crystal chip is bonded by step 2. with the surface of base wafer 6；
Step 3. the lithium niobate crystal chip part in the chip after bonding is thinned, shape using conventional grinding, polishing process
LiNbO_3 film 7 into thickness at 1 μm~20 μm；
Step 4. uses ultraprecise diamond blade, and ridge structure 2, obtained ridge knot are cut on LiNbO_3 film 7
The width of structure 2 is at 1 μm to 10 μm, highly at 1 μm to 20 μm；
Step 5. uses titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process, in ridge structure 2
In prepare titanium diffusion optical waveguide 3 or annealed proton exchange optical waveguide 3, optical waveguide 3 be vertical bar structure；
Step 6. is formed using photoetching process and coating process in conventional semiconductor process above LiNbO_3 film 7
Gold or aluminium film needed for modulator electrode 5, thickness is at 0.1 μm~1 μm；
Step 7. is made modulator electrode 5 and required thick photoresist is electroplated using the thick resist lithography technique in conventional semiconductor process
Mask；
Step 8. on the basis of the gold of step 6 making or aluminium film, is passed through using the electroplating technology in conventional semiconductor process
Plating obtains thickness in the metal films such as 1 μm~30 μm of gold or aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
7. a kind of low driving voltage lithium niobate electrooptic modulator, which is characterized in that base wafer 6, LiNbO_3 film 7, ridge knot
Structure 2, optical waveguide 3, modulator electrode 5,
Hosqt media of the base wafer 6 as LiNbO_3 film 7, the LiNbO_3 film after being lithium niobate crystal chip and being thinned
7 provide a supporting role.Base wafer 6 using with low-k material, such as quartz or by thermal oxidation,
Silicon wafer surface has a silicon based silicon dioxide chip of one layer of fine and close silica coating, the thickness of base wafer 6 in 0.1mm extremely
2mm；
The LiNbO_3 film 7 is by the way that the lithium niobate monocrystal bonding chip of optical grade, twin polishing in base wafer, is passed through
Be thinned and be made, the crystal of LiNbO_3 film 7 tangentially cuts Y biographies for X, thickness at 1 μm to 20 μm,
The optical waveguide 3 is prepared using titanium diffusion technique or annealed proton exchange process, is MZ structures, is formed in ridge structure
In 2,
The ridge structure 2 is made on LiNbO_3 film 7, and width is at 1 μm to 10 μm, highly at 1 μm to 10 μm.Due to light
Waveguide 3 is MZ structures, wherein have the bending part of Y-branch shape, therefore when making ridge structure 2, it only need to be in optical waveguide 3
Modulation both arms left and right sides carry out accurate cutting, i.e., cutting position be located at modulation both arms left side, centre and right side, make optics wave
The modulation both arms for leading 3 are formed in ridge structure 2,
For the modulator electrode 5 using travelling-wave-type electrode made of the metallic films such as gold or aluminium, thickness of electrode is 1 μm to 30 μm, is adjusted
The edge of electrode 5 processed has 1 μm to 10 μm of interval with the edge of ridge structure 2, to avoid modulator electrode 5 in ridge structure 2
The energy of the optical mode of transmission, which is formed, to be absorbed, and increases the insertion loss of electrooptic modulator.
8. a kind of manufacturing method of low driving voltage lithium niobate electrooptic modulator, which is characterized in that include the following steps：
If 6 selected as quartz wafer of step 1. base wafer, the surface of quartz wafer is chemically-mechanicapolish polished；If substrate
Silicon chip is then positioned over temperature in 900 DEG C~1100 DEG C of diffusion furnace by 6 selected as silicon chip of chip, is filled with oxygen, and oxidation 30~
120 minutes, forming surface had the silicon substrate wafer of fine and close silica coating, then the surface of the chip is carried out chemical machinery
Polishing；
Lithium niobate crystal chip is bonded by step 2. with the surface of base wafer 6；
Step 3. the lithium niobate crystal chip part in the chip after bonding is thinned, shape using conventional grinding, polishing process
LiNbO_3 film 7 into thickness at 1 μm~20 μm；
Step 4. uses titanium diffusion technique well-known to those skilled in the art or annealed proton exchange process, in ridge structure 2
In prepare titanium diffusion optical waveguide 3 or annealed proton exchange optical waveguide 3, optical waveguide 3 be MZ structures；
Step 5. uses ultraprecise diamond blade, and the left and right of the modulation both arms of optical waveguide 3 (MZ structures) carries out superfinishing respectively
It cuts closely, obtains ridge structure 2；
Step 6. is formed using photoetching process and coating process in conventional semiconductor process above LiNbO_3 film 7
Gold or aluminium film needed for modulator electrode 5, thickness is at 0.1 μm~1 μm；
Step 7. is made modulator electrode 5 and required thick photoresist is electroplated using the thick resist lithography technique in conventional semiconductor process
Mask；
Step 8. on the basis of the gold of step 6 making or aluminium film, is passed through using the electroplating technology in conventional semiconductor process
Plating obtains thickness in the metal films such as 1 μm~30 μm of gold or aluminium, forms the modulator electrode 5 of lithium niobate electrooptic modulator.
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