CN109103080A - Electroded reversed table top ultra thin wafer of one kind and preparation method thereof - Google Patents
Electroded reversed table top ultra thin wafer of one kind and preparation method thereof Download PDFInfo
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- CN109103080A CN109103080A CN201810921268.7A CN201810921268A CN109103080A CN 109103080 A CN109103080 A CN 109103080A CN 201810921268 A CN201810921268 A CN 201810921268A CN 109103080 A CN109103080 A CN 109103080A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
Abstract
The invention discloses a kind of electroded reversed table top ultra thin wafers and preparation method thereof, from top to down include top electrode, aimed wafer, lower electrode, separation layer and support substrate chip；Wherein aimed wafer with a thickness of 10 ~ 80 μm, the material of aimed wafer is lithium tantalate, lithium niobate or quartz；Top electrode and lower electrode are the metal film with a thickness of 5nm ~ 1 μm, support substrate chip with a thickness of 0.2 ~ 1mm, the material of support substrate chip is silicon, quartz or glass, and the material of aimed wafer and support substrate chip is different；The electroded reversed table top ultra thin wafer of the application includes top electrode, aimed wafer, lower electrode, separation layer and support substrate chip from top to down；Aimed wafer is connected with support substrate chip using separation layer, wherein the surface quality of aimed wafer is good, and surface smoothness is high, thus the effective area for the top electrode and lower electrode connecting with aimed wafer is big, and the frequency stability of the resonator of preparation is high.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, specifically a kind of electroded reversed table top ultra thin wafer and its
Preparation method.
Background technique
Ultra thin wafer has biggish demand in some application fields.For example, quartz resonator need it is super using 5 ~ 70 μm
Thin quartz wafer；Highly sensitive pyroelectric infrared sensor needs the ultra-thin lithium tantalate wafer etc. using 5 ~ 60 μm.Ultra thin wafer
In post-production, encapsulation and use process, often because thickness is small, mechanical property is poor, it is easy stress and is crushed, leverage and add
Work yield rate and the stability used.Therefore, people devise a kind of reverse mesa, i.e., add below ultra thin wafer
Add support, the fragment rate of chip can be substantially reduced, and facilitates operation.For the quartz crystal oscillator used in the crystal oscillator, Ren Menchang
Use the techniques such as burn into etching the partial region of quartz using a monolith quartz crystal, and at the back side of monolith quartz crystal
About 20 μm or so are thinned to, to prepare reverse mesa.
The surface quality of aimed wafer is poor in current electroded reversed table top ultra thin wafer, and coarse flatness is low, because
And electrode layer connected to it is discontinuous, the effective area of motor is small, so that the frequency stability of resonator is influenced, research hair
Existing, more than the electrode surface spot and when area is big, resonator even can be with failure of oscillation, and because friction is made when due to crystal oscillator vibration
At loss it is related with wafer surface smoothness, therefore the frequency of the resonator of electroded reversed table top ultra thin wafer preparation at present
Rate stability is poor, and service life is low.
For ultra thin wafer in the use process for being prepared into device, Ohm contact electrode preparation is mostly indispensable technique,
It is simultaneously also highly important technique, the quality of technique not only influences the photoelectric conversion rate of semiconductor devices, can also be direct
Influence reliability and the service life of device.But after wafer grinding is to several microns to tens micron thickness, the mechanical strength of chip
It substantially reduces, and requires to shift chip in the technical process such as subsequent cleaning, electrode evaporation, or even can be to crystalline substance
Circular surfaces apply mechanicals efforts, chip be very easy to it is chipping, it is low so as to cause yield rate.
Summary of the invention
To solve the above problems, the object of the present invention is to provide a kind of electroded reversed table top ultra thin wafer and its preparations
Method.
The present invention to achieve the above object, is achieved through the following technical solutions:
A kind of electroded reversed table top ultra thin wafer, include from top to down top electrode, aimed wafer, lower electrode, separation layer and
Support substrate chip；Wherein aimed wafer with a thickness of 10 ~ 80 μm, and the general thickness deviation TTV of aimed wafer be 0.005
~ 1 μm, surface roughness≤0.2nm, the material of aimed wafer is lithium tantalate, lithium niobate or quartz；Separation layer is silica,
With a thickness of 100 ~ 4000nm；Top electrode and lower electrode are the metal film with a thickness of 5nm ~ 1 μm, the metal be gold, silver, copper or
Platinum；Support substrate chip with a thickness of 0.2 ~ 1mm, the material of support substrate chip is silicon, quartz or glass, and aimed wafer
It is different with the material of support substrate chip.
Preferably, the material of aimed wafer is lithium tantalate, and the material of support substrate chip is silicon.
The invention also includes a kind of preparation methods of electroded reversed table top ultra thin wafer, comprising the following steps:
1. preparing aimed wafer and support substrate chip, the material of aimed wafer is lithium tantalate, lithium niobate or quartz；Support substrate
The material of chip is silicon, quartz or glass, and aimed wafer is different with the material of support substrate chip；
2. being cleaned to aimed wafer；
3. the electrode in the case where the one side preparation layer of metal film of aimed wafer is used as, then uses chemical vapor deposition in lower electrode surface
Technique prepares layer of silicon dioxide as separation layer；Obtain the aimed wafer with silica separation layer；The electrode is wherein descended to be
With a thickness of the metal film of 5nm ~ 1 μm, the metal is gold, silver, copper or platinum；Make technique that lower electrode uses for sedimentation, splash
Penetrate method, vacuum evaporatation or electroless plating method；Separation layer with a thickness of 100 ~ 4000nm；
4. being 3. bonded after gained is cleaned with the aimed wafer of silica separation layer to support substrate chip and step, obtain
To bonding body；The material of support substrate chip is silicon, quartz or glass, and the material of aimed wafer and support substrate chip is not
Together；
5. carrying out grinding to the aimed wafer in step 4. bonding body to be thinned, and it is processed by shot blasting, makes the thickness of aimed wafer
It is 10 ~ 80 μm；Then the burnishing surface in aimed wafer upper surface prepares layer of metal film as top electrode；It wherein powers on extremely thick
Degree is the metal film of 5nm ~ 1 μm, and the metal is gold, silver, copper or platinum；The technique that production top electrode uses is sedimentation, sputtering
Method, vacuum evaporatation or electroless plating method；
6. the support substrate wafer grinding in step 4. bonding body is thinned to 0.2 ~ 1mm, then under support substrate chip
Surface prepares mask coating figure, obtains the bonding body with mask coating；Mask coating is photoresist；
7. by step, 6. bonding body of the gained with mask coating immerses substrate etching liquid, removes the support of non-mask coating figure
Substrate wafer part；
When the material of support substrate chip is silicon, substrate etching liquid is TMAH, potassium hydroxide solution, sodium hydroxide solution or mixed
Close acid solution；Wherein mixed acid solution is by HF, HNO3And CH3COOH is formed, wherein HF, HNO3And CH3The volume ratio of COOH is 1:
3 ~ 6:2 ~ 10.5；Potassium hydroxide solution, sodium hydroxide solution mass percentage concentration be 5 ~ 26%；
When the material of support substrate chip is quartz or glass, substrate etching liquid is HF；
8. first removing mask coating with mask coating corrosive liquid, separation layer then is removed with acid solution, cutting obtains belt electrode
Reversed table top ultra thin wafer；The mask coating corrosive liquid is acetone；The acid solution is that mass concentration is 30 ~ 40%
Strong acid solution；The strong acid is hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid or hydrofluoric acid.
Preferred preparation method, step 4. in bonding be that room temperature Direct Bonding or high vacuum are bonded.
Preferred preparation method, the acid solution are the hydrofluoric acid solution that mass concentration is 35%.
Preferred preparation method, step 2. in aimed wafer is cleaned using RCA standard cleaning technique.
Preferred preparation method makes the technique that upper and lower electrode uses as vacuum evaporatation.
The present invention has the advantage that compared with prior art
The electroded reversed table top ultra thin wafer of the application includes top electrode, aimed wafer, lower electrode, isolation from top to down
Layer and support substrate chip；Aimed wafer is connected with support substrate chip using separation layer, wherein the surface matter of aimed wafer
It measures, surface smoothness is high, thus the effective area for the top electrode and lower electrode connecting with aimed wafer is big, the resonator of preparation
Frequency stability it is high；
The preparation method of the electroded reversed table top ultra thin wafer of the application, can not only guarantee upper/lower electrode and aimed wafer
Between can have good Ohmic contact, moreover it is possible to the fragmentation problem of effective solution aimed wafer during plated electrode reduces anti-
To the fragment rate of table top, yield rate is greatly improved, realizes the batch production of reversed table top.
Detailed description of the invention
Fig. 1 is the preparation flow schematic diagram of electroded reversed table top ultra thin wafer；
Fig. 2 is the cross-sectional view under the one side production of aimed wafer after electrode；
Fig. 3 is to deposit the cross-sectional view after silica separation layer on the bottom electrode；
Fig. 4 is by the cross-sectional view after separation layer and support substrate bonding chip；
Fig. 5 is that the aimed wafer in para-linkage body carries out the cross-sectional view after grinding is thinned, polishes；
Fig. 6 is the cross-sectional view after the upper surface of aimed wafer makes top electrode；
Fig. 7 is the cross-sectional view after the lower surface of support substrate chip forms mask graph；
Fig. 8 is the cross-sectional view after etch away parts substrate；
Fig. 9 is the cross-sectional view eroded after silica separation layer；
Figure 10 is the cross-sectional view removed after mask coating；
Figure 11 is the cross-sectional view of the electroded reversed table top ultra thin wafer after cutting to chip；
Appended drawing reference: 1 top electrode；2 aimed wafers；3 lower electrodes；4 silica separation layers；5 support substrate chips；6 masks apply
Layer.
Specific embodiment
The object of the present invention is to provide a kind of electroded reversed table top ultra thin wafers and preparation method thereof, pass through following skill
Art scheme is realized:
A kind of electroded reversed table top ultra thin wafer, include from top to down top electrode, aimed wafer, lower electrode, separation layer and
Support substrate chip；Wherein aimed wafer with a thickness of 10 ~ 80 μm, and the general thickness deviation TTV of aimed wafer be 0.005
~ 1 μm, surface roughness≤0.2nm, the material of aimed wafer is lithium tantalate, lithium niobate or quartz；Separation layer is silica,
With a thickness of 100 ~ 4000nm；Top electrode and lower electrode are the metal film with a thickness of 5nm ~ 1 μm, the metal be gold, silver, copper or
Platinum；Support substrate chip with a thickness of 0.2 ~ 1mm, the material of support substrate chip is silicon, quartz or glass, and aimed wafer
It is different with the material of support substrate chip.
Preferably, the material of aimed wafer is lithium tantalate, and the material of support substrate chip is silicon.
The invention also includes a kind of preparation methods of electroded reversed table top ultra thin wafer, comprising the following steps:
1. preparing aimed wafer and support substrate chip, the material of aimed wafer is lithium tantalate, lithium niobate or quartz；Support substrate
The material of chip is silicon, quartz or glass, and aimed wafer is different with the material of support substrate chip；
2. being cleaned to aimed wafer；
3. the electrode in the case where the one side preparation layer of metal film of aimed wafer is used as, then uses chemical vapor deposition in lower electrode surface
Technique prepares layer of silicon dioxide as separation layer；Obtain the aimed wafer with silica separation layer；The electrode is wherein descended to be
With a thickness of the metal film of 5nm ~ 1 μm, the metal is gold, silver, copper or platinum；Make technique that lower electrode uses for sedimentation, splash
Penetrate method, vacuum evaporatation or electroless plating method；Separation layer with a thickness of 100 ~ 4000nm；
4. being 3. bonded after gained is cleaned with the aimed wafer of silica separation layer to support substrate chip and step, obtain
To bonding body；The material of support substrate chip is silicon, quartz or glass, and the material of aimed wafer and support substrate chip is not
Together；
5. carrying out grinding to the aimed wafer in step 4. bonding body to be thinned, and it is processed by shot blasting, makes the thickness of aimed wafer
It is 10 ~ 80 μm；Then the burnishing surface in aimed wafer upper surface prepares layer of metal film as top electrode；It wherein powers on extremely thick
Degree is the metal film of 5nm ~ 1 μm, and the metal is gold, silver, copper or platinum；The technique that production top electrode uses is sedimentation, sputtering
Method, vacuum evaporatation or electroless plating method；
6. the support substrate wafer grinding in step 4. bonding body is thinned to 0.2 ~ 1mm, then under support substrate chip
Surface prepares mask coating figure, obtains the bonding body with mask coating；Mask coating is photoresist；
7. by step, 6. bonding body of the gained with mask coating immerses substrate etching liquid, removes the support of non-mask coating figure
Substrate wafer part；
When the material of support substrate chip is silicon, substrate etching liquid is TMAH, potassium hydroxide solution, sodium hydroxide solution or mixed
Close acid solution；Wherein mixed acid solution is by HF, HNO3And CH3COOH is formed, wherein HF, HNO3And CH3The volume ratio of COOH is 1:
3 ~ 6:2 ~ 10.5；Potassium hydroxide solution, sodium hydroxide solution mass percentage concentration be 5 ~ 26%；
When the material of support substrate chip is quartz or glass, substrate etching liquid is HF；
8. first removing mask coating with mask coating corrosive liquid, separation layer then is removed with acid solution, cutting obtains belt electrode
Reversed table top ultra thin wafer；The mask coating corrosive liquid is acetone；The acid solution is that mass concentration is 30 ~ 40%
Strong acid solution；The strong acid is hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid or hydrofluoric acid.
Preferred preparation method, step 4. in bonding be that room temperature Direct Bonding or high vacuum are bonded.
Preferred preparation method, the acid solution are the hydrofluoric acid solution that mass concentration is 35%.
Preferred preparation method, step 2. in aimed wafer is cleaned using RCA standard cleaning technique.
Preferred preparation method makes the technique that upper and lower electrode uses as vacuum evaporatation.
Below in conjunction with specific embodiment, the invention will be further described.
Sedimentation, sputtering method, vacuum evaporatation, chemistry in the present invention to the manufacture craft use of upper and lower electrode
Plating method is the existing mature technology that can be inquired.
Room temperature Direct Bonding or high vacuum bonding techniques are the prior art.
Embodiment 1
A kind of electroded reversed table top ultra thin wafer, include from top to down top electrode, aimed wafer, lower electrode, separation layer and
Support substrate chip；Wherein aimed wafer with a thickness of 10 μm, and the general thickness deviation TTV of aimed wafer be 0.005 ~ 1 μ
M, surface roughness≤0.2nm, the material of aimed wafer are lithium tantalate；Separation layer is silica, with a thickness of 100nm；It powers on
Pole and lower electrode are the metal film with a thickness of 5nm, and the metal is gold；Support substrate chip with a thickness of 0.2mm, support lining
The material of bottom chip is silicon.
Embodiment 2
A kind of electroded reversed table top ultra thin wafer, include from top to down top electrode, aimed wafer, lower electrode, separation layer and
Support substrate chip；Wherein aimed wafer with a thickness of 80 μm, and the general thickness deviation TTV of aimed wafer be 0.005 ~ 1 μ
M, surface roughness≤0.2nm, the material of aimed wafer are lithium niobate；Separation layer is silica, with a thickness of 4000nm；It powers on
Pole and lower electrode are the metal film with a thickness of 1 μm, and the metal is silver；Support substrate chip with a thickness of 1mm, support substrate
The material of chip is quartz.
Embodiment 3
A kind of electroded reversed table top ultra thin wafer, include from top to down top electrode, aimed wafer, lower electrode, separation layer and
Support substrate chip；Wherein aimed wafer with a thickness of 20 μm, and the general thickness deviation TTV of aimed wafer be 0.005 ~ 1 μ
M, surface roughness≤0.2nm, the material of aimed wafer are quartz；Separation layer is silica, with a thickness of 500nm；Top electrode
With the metal film that lower electrode is with a thickness of 100nm, the metal is copper；Support substrate chip with a thickness of 0.5mm, support lining
The material of bottom chip is glass.
Embodiment 4
A kind of electroded reversed table top ultra thin wafer, include from top to down top electrode, aimed wafer, lower electrode, separation layer and
Support substrate chip；Wherein aimed wafer with a thickness of 50 μm, and the general thickness deviation TTV of aimed wafer be 0.005 ~ 1 μ
M, surface roughness≤0.2nm, the material of aimed wafer are lithium tantalate；Separation layer is silica, with a thickness of 2000nm；It powers on
Pole and lower electrode are the metal film with a thickness of 0.5 μm, and the metal is platinum；Support substrate chip with a thickness of 0.8mm, support
The material of substrate wafer is quartz.
Embodiment 5
The preparation method of the electroded reversed table top ultra thin wafer of one kind described in embodiment 1, process signal as shown in Figure 1
Figure, comprising the following steps:
1. preparing aimed wafer and support substrate chip, the material of aimed wafer is lithium tantalate；The material of support substrate chip is
Silicon；
2. being cleaned to aimed wafer；
3. the electrode (Fig. 2) in the case where the one side preparation layer of metal film of aimed wafer is used as, then in lower electrode surface using chemical gas
Phase depositing operation prepares layer of silicon dioxide as separation layer (Fig. 3)；Obtain the aimed wafer with silica separation layer；Its
In lower electrode be metal film with a thickness of 5nm, the metal is gold；The technique that electrode uses under making is sedimentation；Separation layer
With a thickness of 100nm；
4. being 3. bonded after gained is cleaned with the aimed wafer of silica separation layer to support substrate chip and step, obtain
To bonding body (Fig. 4)；
5. carrying out grinding to the aimed wafer in step 4. bonding body to be thinned, and it is processed by shot blasting, makes the thickness of aimed wafer
For 10 μm (Fig. 5)；Then the burnishing surface in aimed wafer upper surface prepares layer of metal film as top electrode (Fig. 6)；On wherein
Electrode is the metal film with a thickness of 5nm, and the metal is gold；The technique that production top electrode uses is sedimentation；
6. the support substrate wafer grinding in step 4. bonding body is thinned to 0.2mm, then in the following table of support substrate chip
Wheat flour obtains the bonding body (Fig. 7) with mask coating for mask coating figure；Mask coating is photoresist；
7. by step, 6. bonding body of the gained with mask coating immerses substrate etching liquid, removes the support of non-mask coating figure
Substrate wafer part (Fig. 8)；
When the material of support substrate chip is silicon, substrate etching liquid is TMAH,
Substrate etching liquid also can choose the etchant solution with identical corrosion resistant support substrate wafer function, as potassium hydroxide is molten
Liquid, sodium hydroxide solution or mixed acid solution；Wherein mixed acid solution is by HF, HNO3And CH3COOH is formed, wherein HF, HNO3With
CH3The volume ratio of COOH is 1:3 ~ 6:2 ~ 10.5；Potassium hydroxide solution, sodium hydroxide solution mass percentage concentration be 5 ~
26%；
8. first then being removed separation layer (Figure 10) with mask coating corrosive liquid removal mask coating (Fig. 9) with acid solution, being cut
It cuts, obtains electroded reversed table top ultra thin wafer (Figure 11)；The mask coating corrosive liquid is acetone；The acid solution is
The hydrochloric acid solution that mass concentration is 30%.
Embodiment 6
The preparation method of electroded reversed table top ultra thin wafer as described in example 2, comprising the following steps:
1. preparing aimed wafer and support substrate chip, the material of aimed wafer is lithium niobate；The material of support substrate chip is
Quartz；
2. being cleaned to aimed wafer；
3. the electrode in the case where the one side preparation layer of metal film of aimed wafer is used as, then uses chemical vapor deposition in lower electrode surface
Technique prepares layer of silicon dioxide as separation layer；Obtain the aimed wafer with silica separation layer；The electrode is wherein descended to be
With a thickness of 1 μm of metal film, the metal is silver；The technique that electrode uses under making is sputtering method；Separation layer with a thickness of
4000nm；
4. being 3. bonded after gained is cleaned with the aimed wafer of silica separation layer to support substrate chip and step, obtain
To bonding body；
5. carrying out grinding to the aimed wafer in step 4. bonding body to be thinned, and it is processed by shot blasting, makes the thickness of aimed wafer
It is 80 μm；Then the burnishing surface in aimed wafer upper surface prepares layer of metal film as top electrode；Wherein power on extremely thickness
For 1 μm of metal film, the metal is silver；The technique that production top electrode uses is sputtering method；
6. the support substrate wafer grinding in step 4. bonding body is thinned to 1mm, then in the lower surface of support substrate chip
Mask coating figure is prepared, the bonding body with mask coating is obtained；Mask coating is photoresist；
7. by step, 6. bonding body of the gained with mask coating immerses in substrate etching liquid HF, removes non-mask coating figure
Support substrate container portion；
8. first removing mask coating with mask coating corrosive liquid, separation layer then is removed with acid solution, cutting obtains belt electrode
Reversed table top ultra thin wafer；The mask coating corrosive liquid is acetone；The acid solution is the sulfuric acid that mass concentration is 40%
Solution.
Embodiment 7
The preparation method of electroded reversed table top ultra thin wafer described in embodiment 3, comprising the following steps:
1. preparing aimed wafer and support substrate chip, the material of aimed wafer is quartz；The material of support substrate chip is glass
Glass；
2. being cleaned to aimed wafer；
3. the electrode in the case where the one side preparation layer of metal film of aimed wafer is used as, then uses chemical vapor deposition in lower electrode surface
Technique prepares layer of silicon dioxide as separation layer；Obtain the aimed wafer with silica separation layer；The electrode is wherein descended to be
With a thickness of the metal film of 500nm, the metal is copper；The technique that electrode uses under making is vacuum evaporatation；Separation layer
With a thickness of 500nm；
4. being 3. bonded after gained is cleaned with the aimed wafer of silica separation layer to support substrate chip and step, obtain
To bonding body；
5. carrying out grinding to the aimed wafer in step 4. bonding body to be thinned, and it is processed by shot blasting, makes the thickness of aimed wafer
It is 20 μm；Then the burnishing surface in aimed wafer upper surface prepares layer of metal film as top electrode；Wherein power on extremely thickness
For the metal film of 500nm, the metal is copper；The technique that production top electrode uses is vacuum evaporatation；
6. the support substrate wafer grinding in step 4. bonding body is thinned to 0.5mm, then in the following table of support substrate chip
Wheat flour obtains the bonding body with mask coating for mask coating figure；Mask coating is photoresist；
7. by step, 6. bonding body of the gained with mask coating immerses substrate etching liquid HF, removes the branch of non-mask coating figure
Support substrate wafer part；
8. first removing mask coating with mask coating corrosive liquid, separation layer then is removed with acid solution, cutting obtains belt electrode
Reversed table top ultra thin wafer；The mask coating corrosive liquid is acetone；The acid solution is the nitric acid that mass concentration is 32%
Solution.
Embodiment 8
The preparation method of electroded reversed table top ultra thin wafer as described in example 4, comprising the following steps:
1. preparing aimed wafer and support substrate chip, the material of aimed wafer is lithium tantalate；The material of support substrate chip is
Quartz；
2. being cleaned to aimed wafer；
3. the electrode in the case where the one side preparation layer of metal film of aimed wafer is used as, then uses chemical vapor deposition in lower electrode surface
Technique prepares layer of silicon dioxide as separation layer；Obtain the aimed wafer with silica separation layer；The electrode is wherein descended to be
With a thickness of 0.5 μm of metal film, the metal is platinum；The technique that electrode uses under making is electroless plating method；The thickness of separation layer
For 2000nm；
4. being 3. bonded after gained is cleaned with the aimed wafer of silica separation layer to support substrate chip and step, obtain
To bonding body；
5. carrying out grinding to the aimed wafer in step 4. bonding body to be thinned, and it is processed by shot blasting, makes the thickness of aimed wafer
It is 50 μm；Then the burnishing surface in aimed wafer upper surface prepares layer of metal film as top electrode；Wherein power on extremely thickness
For 0.5 μm of metal film, the metal is platinum；The technique that production top electrode uses is electroless plating method；
6. the support substrate wafer grinding in step 4. bonding body is thinned to 0.8mm, then in the following table of support substrate chip
Wheat flour obtains the bonding body with mask coating for mask coating figure；Mask coating is photoresist；
7. by step, 6. bonding body of the gained with mask coating immerses substrate etching liquid HF, removes the branch of non-mask coating figure
Support substrate wafer part；
8. first removing mask coating with mask coating corrosive liquid, separation layer then is removed with acid solution, cutting obtains belt electrode
Reversed table top ultra thin wafer；The mask coating corrosive liquid is acetone；The acid solution is the hydrogen fluorine that mass concentration is 35%
Acid solution.
Claims (7)
1. a kind of electroded reversed table top ultra thin wafer, it is characterised in that: include from top to down top electrode, aimed wafer, under
Electrode, separation layer and support substrate chip；Wherein aimed wafer with a thickness of 10 ~ 80 μm, and the general thickness of aimed wafer
Deviation TTV is 0.005 ~ 1 μm, surface roughness≤0.2nm, and the material of aimed wafer is lithium tantalate, lithium niobate or quartz；Isolation
Layer is silica, with a thickness of 100 ~ 4000nm；Top electrode and lower electrode are the metal film with a thickness of 5nm ~ 1 μm, the gold
Belong to is gold, silver, copper or platinum；Support substrate chip with a thickness of 0.2 ~ 1mm, the material of support substrate chip is silicon, quartz or glass
Glass, and aimed wafer is different with the material of support substrate chip.
2. the electroded reversed table top ultra thin wafer of one kind according to claim 1, it is characterised in that: the material of aimed wafer
Material is lithium tantalate, and the material of support substrate chip is silicon.
3. a kind of preparation method of electroded reversed table top ultra thin wafer, it is characterised in that: the following steps are included:
1. preparing aimed wafer and support substrate chip, the material of aimed wafer is lithium tantalate, lithium niobate or quartz；Support substrate
The material of chip is silicon, quartz or glass, and aimed wafer is different with the material of support substrate chip；
2. being cleaned to aimed wafer；
3. the electrode in the case where the one side preparation layer of metal film of aimed wafer is used as, then uses chemical vapor deposition in lower electrode surface
Technique prepares layer of silicon dioxide as separation layer；Obtain the aimed wafer with silica separation layer；The electrode is wherein descended to be
With a thickness of the metal film of 5nm ~ 1 μm, the metal is gold, silver, copper or platinum；Make technique that lower electrode uses for sedimentation, splash
Penetrate method, vacuum evaporatation or electroless plating method；Separation layer with a thickness of 100 ~ 4000nm；
4. being 3. bonded after gained is cleaned with the aimed wafer of silica separation layer to support substrate chip and step, obtain
To bonding body；The material of support substrate chip is silicon, quartz or glass, and the material of aimed wafer and support substrate chip is not
Together；
5. carrying out grinding to the aimed wafer in step 4. bonding body to be thinned, and it is processed by shot blasting, makes the thickness of aimed wafer
It is 10 ~ 80 μm；Then the burnishing surface in aimed wafer upper surface prepares layer of metal film as top electrode；It wherein powers on extremely thick
Degree is the metal film of 5nm ~ 1 μm, and the metal is gold, silver, copper or platinum；The technique that production top electrode uses is sedimentation, sputtering
Method, vacuum evaporatation or electroless plating method；
6. the support substrate wafer grinding in step 4. bonding body is thinned to 0.2 ~ 1mm, then under support substrate chip
Surface prepares mask coating figure, obtains the bonding body with mask coating；Mask coating is photoresist；
7. by step, 6. bonding body of the gained with mask coating immerses substrate etching liquid, removes the support of non-mask coating figure
Substrate wafer part；
When the material of support substrate chip is silicon, substrate etching liquid is TMAH, potassium hydroxide solution, sodium hydroxide solution or mixed
Close acid solution；Wherein mixed acid solution is by HF, HNO3And CH3COOH is formed, wherein HF, HNO3And CH3The volume ratio of COOH is 1:
3 ~ 6:2 ~ 10.5；Potassium hydroxide solution, sodium hydroxide solution mass percentage concentration be 5 ~ 26%；
When the material of support substrate chip is quartz or glass, substrate etching liquid is HF；
8. first removing mask coating with mask coating corrosive liquid, separation layer then is removed with acid solution, cutting obtains belt electrode
Reversed table top ultra thin wafer；The mask coating corrosive liquid is acetone；The acid solution is that mass concentration is 30 ~ 40%
Strong acid solution；The strong acid is hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid or hydrofluoric acid.
4. the preparation method of the electroded reversed table top ultra thin wafer of one kind according to claim 3, it is characterised in that: step
Suddenly 4. in bonding be that room temperature Direct Bonding or high vacuum are bonded.
5. the preparation method of the electroded reversed table top ultra thin wafer of one kind according to claim 3, it is characterised in that: institute
Stating acid solution is the hydrofluoric acid solution that mass concentration is 35%.
6. the preparation method of the electroded reversed table top ultra thin wafer of one kind according to claim 3, it is characterised in that: step
Suddenly 2. in aimed wafer is cleaned using RCA standard cleaning technique.
7. the preparation method of the electroded reversed table top ultra thin wafer of one kind according to claim 3, it is characterised in that: system
Make the technique that upper and lower electrode uses as vacuum evaporatation.
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