CN109491110A - High damage threshold Waveguide Phase Modulator - Google Patents
High damage threshold Waveguide Phase Modulator Download PDFInfo
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- CN109491110A CN109491110A CN201811544028.6A CN201811544028A CN109491110A CN 109491110 A CN109491110 A CN 109491110A CN 201811544028 A CN201811544028 A CN 201811544028A CN 109491110 A CN109491110 A CN 109491110A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0018—Electro-optical materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12045—Lithium tantalate (LiTaO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
This application discloses a kind of high damage threshold Waveguide Phase Modulators, belong to optical engineering field.High damage threshold Waveguide Phase Modulator provided by the present application, including crystal sandwich layer and waveguide；The upper surface of the crystal sandwich layer includes planar section and convex portion, and the convex portion is extended outwardly along the direction far from the crystal sandwich layer by the planar section and formed, and the convex portion extends along the direction for being parallel to the planar section；The extending direction parallel with the planar section of convex portion described in the upper end edge of the convex portion is inwardly formed the groove of connection, and the waveguide filling is in the groove.High damage threshold Waveguide Phase Modulator provided herein is able to bear high-power input light, and has high modulation bandwidth, low driving voltage, high damage threshold, low insertion loss.
Description
Technical field
This application involves a kind of high damage threshold Waveguide Phase Modulators, belong to optical engineering field.
Background technique
Lithium niobate phase modulator be widely used in Optical Controlled Phased Array Antenna, electronic warfare, high speed network interconnection, cloud computing,
In the light transmitting and receiving system in the fields such as sensor, comprehensive survey, with transmission capacity is big, transmission quality is high, repeater span is long, anti-electricity
The excellent properties such as magnetic disturbance performance is good, security performance is good.
Traditional lithium niobate phase modulator includes lithium niobate chip and the linear light wave parallel with lithium niobate chip
Lead, optical waveguide is located at the upper surface of lithium niobate chip, optical waveguide two sides lithium niobate chip on be covered with traveling wave electrode use
To apply modulation voltage to optical waveguide.Optical waveguide is mainly made using too diffusion technique or annealed proton exchange process.
With the development of technology, optical communication capability continues to increase, while needing under some special applications scenes stronger
Optical power density optical transport, traditional lithium niobate phase modulator using lithium niobate as conductive material, self-inflicted injury threshold value
Deficiency can no longer meet, and urgently solve therefore it provides a kind of phase-modulator for being able to bear high power input light has become
Certainly the technical issues of.
Summary of the invention
This application provides a kind of high damage threshold Waveguide Phase Modulators, are able to bear high-power input light, and
Have the characteristics that high modulation bandwidth, low driving voltage, high damage threshold, low insertion loss.
A kind of high damage threshold Waveguide Phase Modulator, including crystal sandwich layer and waveguide；
The upper surface of the crystal sandwich layer includes planar section and convex portion, and the convex portion is by the planar section
Extend outwardly and formed along the first direction far from the crystal sandwich layer, and convex portion edge is parallel to the planar section
Second direction extend；
Second direction described in the upper end edge of the convex portion is inwardly formed the groove of connection；
The waveguide is located in the groove, and incident light is propagated in the waveguide along the second direction.
Optionally, the cross section of the waveguide is arch or rectangle.
Optionally, the crystal sandwich layer is selected from lithium niobate crysal near stoichiometric ratio (SLN), magnesium-doped lithium niobate crystal
(MgO:SLN), it mixes zinc niobate crystalline lithium (ZnO:SLN), near-stoichiometric lithium tantalate crystals (SLT) mix magnesium lithium tantalate
(MgO:SLT), any one in zinc lithium tantalate (ZnO:SLT) is mixed.
It optionally, further include substrate, the lower surface of the crystal sandwich layer is fixed by optical cement film layer and the substrate.
Optionally, the substrate be selected from silicon wafer, lithium niobate, lithium tantalate, silicon carbide, quartz in any one.
It optionally, further include buffer layer, the buffer layer is covered on the upper surface of the crystal sandwich layer and the upper table of waveguide
Face.
Optionally, the buffer layer is selected from SiO2, SixNy, any one in DLC film.
It optionally, further include traveling wave electrode, the traveling wave electrode is covered on the buffer layer, wherein the traveling wave electricity
Pole is used to apply modulation voltage to the waveguide.
Optionally, the traveling wave electrode includes first electrode and second electrode, wherein the middle section of the first electrode
It is covered on the buffer layer above the waveguide, the second electrode is respectively overlay in the crystal on the first electrode both sides
On buffer layer above sandwich layer planar section.
Optionally, the extending direction parallel with planar section with the convex portion of the crystal sandwich layer is perpendicular
Two end faces respectively with incident light optical fiber and emergent light optical fiber are fixed is of coupled connections with being formed, so as to the incident light optical fiber and go out
It is opposite with the waveguide to penetrate light optical fiber.
Optionally, the incident light optical fiber and emergent light optical fiber include single mode optical fiber, multimode fibre, appointing in polarization maintaining optical fibre
It anticipates one kind.
High damage threshold Waveguide Phase Modulator provided herein, using the high optic damage threshold value crystal material such as SLT
Material, while using ridge structure and Li base diffused waveguide structure is dual that laser is limited in lesser region, so that this
High damage threshold Waveguide Phase Modulator provided by applying is able to bear high-power input light, and has high modulation
Width, low driving voltage, high damage threshold, low insertion loss.
Detailed description of the invention
Fig. 1 is the main view of the high damage threshold Waveguide Phase Modulator provided in embodiment 1；
Fig. 2 is the top view of high damage threshold Waveguide Phase Modulator shown in FIG. 1；
Fig. 3 is the structural schematic diagram for the high damage threshold Waveguide Phase Modulator that embodiment 2 provides；
Fig. 4 is the encapsulation schematic diagram for the high damage threshold Waveguide Phase Modulator that embodiment 2 provides.
Reference signs list:
100 crystal sandwich layers；101 planar sections；102 convex portions；
200 waveguides；300 substrates；400 optical cement film layers；
500 buffer layers；600 traveling wave electrodes；601 first electrodes；
602 second electrodes；701 incident light optical fiber；702 emergent light optical fiber；
800 clamping pieces.
Specific embodiment
The application is described in detail below with reference to embodiment, but the application is not limited to these embodiments.
Embodiment 1
Fig. 1 is the main view of the high damage threshold Waveguide Phase Modulator provided in the present embodiment, and Fig. 2 is shown in FIG. 1
The top view of high damage threshold Waveguide Phase Modulator illustrates the high damage threshold in the present embodiment below with reference to Fig. 1 and 2
Waveguide Phase Modulator.
As depicted in figs. 1 and 2, the high damage threshold Waveguide Phase Modulator in the present embodiment, including crystal sandwich layer 100；
The upper surface of crystal sandwich layer 100 includes planar section 101 and convex portion 102, and convex portion 102 is by planar section 101 along remote
First direction from crystal sandwich layer 100 extends outwardly and is formed, and convex portion 102 is along being parallel to the second of planar section 101
Direction extends；The upper end of convex portion 102 is inwardly formed the groove of connection in a second direction, and waveguide 200 is located in the groove, enters
Light is penetrated to propagate in waveguide 200 along second direction.
Specifically, first direction is the direction far from crystal sandwich layer, for example, can be and 100 upper surface phase of crystal sandwich layer
Vertical direction, or may be and the angled direction in 100 upper surface of crystal sandwich layer.Second direction can be with plane
The parallel direction in part 101.Preferably, at 90 angles between first direction and second direction, so that preparation process simplifies.
The upper end of convex portion 102 is inwardly formed groove along second direction formation, and waveguide 200 is then located at the inner groovy
In, i.e. waveguide 200 is to extend in groove along second direction, is matched between waveguide 200 and groove.Waveguide 200 and protrusion
Part 102 and planar section 101 are integrally formed the structure similar to ridged as shown in Figure 1.
Waveguide 200 can be strip, naturally it is also possible to be wavy, cross section can be arch shown in FIG. 1, or
Person may be rectangle.The width of waveguide 200 (refers to the cross section of waveguide 200 phase on the direction for being parallel to crystal sandwich layer 100
Away from farthest the distance between point) it is determined according to applicable wavelengths, meet the condition of single mode.For example, when wavelength is 1550nm, wave
Leading width is 7-10 μm.Preferably, the width of convex portion 102 (refers to that the cross section of convex portion 102 is being parallel to crystal core
The distance between the point of lie farthest away on the direction of layer 100) it is 1~4 μm wider than the width of waveguide 200.Preferably, convex portion
102 depth (refers to the cross section of convex portion 102 on the direction perpendicular to crystal sandwich layer 100 between the point of lie farthest away
Distance) be 1~5 μm.
Waveguide 200 is produced on the surface of crystal sandwich layer 100, can be exchanged and be made by annealed proton, or can also be with
It is exchanged and is made by antiproton.It, will be in crystal sandwich layer 100 when exchanging production by annealed proton in a specific example
Stay it is figuratum be placed in the proton source rich in proton on one side, pattern herein is the shape pattern of waveguide, such as bar shaped, annealing
Proton source used by proton exchange is benzoic acid and pyrophosphoric acid, and in 200 DEG C or so progress proton exchanges, the proton exchange time is
It 1~3 hour, then anneals at a high temperature of 350 DEG C, annealing time is 2~6 hours.In another example, pass through
Antiproton exchange is made, will treated that crystal sandwich layer 100 is put into the benzene first rich in Li+ ion by annealed proton exchange
Proton exchange is carried out in sour lithium solution, annealing temperature is 200 DEG C, and annealing time is 1~3 hour.
After waveguide 200 completes, the side of lithographic mask layer, etching is passed through to the surface that crystal sandwich layer 100 includes waveguide
Legal system makes convex portion 102.Specifically, the etching of convex portion 102 can pass through HF+HNO3Solution wet etching, or
Can also be by dry etching, specific operating procedure and condition are means customary in the art, are not being repeated herein.
Further, crystal sandwich layer 100 can be selected from lithium niobate crysal near stoichiometric ratio (SLN), and mg-doped lithium niobate is brilliant
Body (MgO:SLN) mixes zinc niobate crystalline lithium (ZnO:SLN), near-stoichiometric lithium tantalate crystals (SLT), and it is brilliant to mix magnesium lithium tantalate
Body (MgO:SLT) mixes any one in zinc lithium tantalate (ZnO:SLT).
High damage threshold Waveguide Phase Modulator provided in this embodiment, by forming protrusion in the upper surface of crystal sandwich layer
Part, forms inwardly projecting waveguide in the upper end of convex portion, i.e. the upper end of convex portion forms sunk structure, waveguide then position
In the interior recess of the sunk structure.Expand using the high optic damage threshold value crystalline material such as SLT, while using ridge structure and Li base
Dissipate that waveguiding structure is dual that laser is limited in lesser region, so that high damage threshold waveguide phase provided herein
Position modulator is able to bear high-power input light (the laser power input for being able to bear several watts of ranks), and can modulate band
Width is 100MHz~250GHz, and also has low driving voltage, high damage threshold, low insertion loss.
Embodiment 2
Fig. 3 is the structural schematic diagram of high damage threshold Waveguide Phase Modulator provided in this embodiment, and Fig. 4 is the present embodiment
The encapsulation schematic diagram of the high damage threshold Waveguide Phase Modulator of offer.Below with reference to Fig. 3 and 4 illustrate the present embodiment provides
High damage threshold Waveguide Phase Modulator.
On the basis of the above embodiments, high damage threshold Waveguide Phase Modulator provided in this embodiment is as shown in Figure 3
It further include substrate 300, the lower surface of the crystal sandwich layer 100 is fixed by optical cement film layer 400 and the substrate 300.
Specifically, the shape of substrate 300 matches with crystal sandwich layer 100, the thickness of matrix 300 can for 0.1~
0.5mm.Be equipped with optical cement film layer 400 between matrix 300 and crystal sandwich layer 100, the thickness of optical cement film layer can for 20nm~
20μm.During the preparation process, for example, a thickness can be plated respectively in the upper surface of matrix 300 and the lower surface of crystal sandwich layer 100
Degree is the optical cement film of 10nm~10 μm, then passes sequentially through ion in-depth optical cement technique and annealing process consolidates crystal sandwich layer 100
It is scheduled on matrix 300.Wherein, the temperature of annealing can be 400~600 DEG C, and annealing time can be 1~3 hour.
Optionally, substrate 300 be selected from silicon wafer, lithium niobate, lithium tantalate, silicon carbide, quartz in any one.Base 300
It is used to support.
Optionally, optical cement film layer 400 can be SiO2、SixNyDeng, optical cement film layer 400 for making crystal sandwich layer 100
With the fixed bonding of matrix 300.
Optionally, as shown in figure 3, high damage threshold Waveguide Phase Modulator further includes buffer layer 500, buffer layer 500 covers
The upper surface in crystal sandwich layer 100 and the upper surface of waveguide 200 are covered, for matching the propagation rate of light and electronics.Buffer layer 500
The SiO of high compactness can be selected from2, SixNy, any one in DLC film.The thickness of buffer layer 500 can for 0~
2 μm, such as can be 0.5 μm, or be 1 μm.Buffer layer 500 can be made by CVD or electron beam evaporation process.
Optionally, high damage threshold Waveguide Phase Modulator further includes traveling wave electrode 600, and traveling wave electrode 600 is covered on slow
It rushes on layer 500, traveling wave electrode 600 is used to apply modulation voltage to waveguide 200.
Optionally, as shown in figure 4, traveling wave electrode 600 includes first electrode 601 and second electrode 602, wherein the first electricity
The middle section of pole 601 is covered on the buffer layer 500 of 200 top of waveguide, and second electrode 602 is respectively overlay in the first electricity
On the buffer layer 500 of 100 planar section of crystal sandwich layer, 101 top on 601 both sides of pole.
In the present embodiment, the thickness of traveling wave electrode 600 can be 3~50 μm.As shown in figure 3, the width of first electrode 601
Be slightly larger than or equal to waveguide 200 width, while be less than or equal to convex portion 102 width
In actual fabrication process, photoetching alignment process can be first passed through and prepare electrode pattern, then subsequently pass through plating
Membrane process obtains the plating seed layer of Cr+Au, finally by preparing electrode by electroplating technology, system used in the preparation process
Preparation Method is technology customary in the art, and details are not described herein again.
Optionally, as shown in figure 4, two end faces perpendicular with incident light propagation direction of crystal sandwich layer 100 respectively with
Incident light optical fiber 701 and the fixation of emergent light optical fiber 702 are of coupled connections with being formed, so that incident light optical fiber 701 and emergent light optical fiber
702 is opposite with waveguide 200, that is to say, that the light wave projected from incident light optical fiber 701 enters in waveguide 200 and in waveguide 200
Then middle propagation is entered back into emergent light optical fiber 702 by the injection of waveguide 200.Waveguide 200 and incident light optical fiber 701 and emergent light
It can be fixed, can also be further fixed by clamping piece 800, to prevent optical fiber and wave by bonding between optical fiber 702
It leads to be lost caused by relatively moving between 200 and increase.
Optionally, incident light optical fiber 701 and emergent light optical fiber 702 can be single mode optical fiber, or may be multimode light
Fibre, or can also be polarization maintaining optical fibre.
The preparation process of the high damage threshold Waveguide Phase Modulator in the present embodiment is described below.
Three inches of MgO:SLT wafers of a piece of 0.3mm thickness are sticked to 0.5mm in such a way that ion deepens optical cement first
On the lithium niobate base of thickness low 300, the thickness of optical cement film layer 400 is 1 μm or so, material SiO2；To MgO:SLT wafer
It carries out being thinned to 15 μm, and guarantees its thickness uniformity≤1 μm ,-Z is face-up；The face-Z of MgO:SLT crystal 3 after being thinned
On, by processing steps such as photoetching, metal coating (Al film), removings, make the slotted metal that width is 8 μm；Then by device
It is put into the benzoic acid solution of high-purity, 2 hours proton exchanges is carried out at 200 DEG C；It is further continued for device being put into wet oxygen
In 350 DEG C of high temperature Muffle furnaces under atmosphere, annealing in 6 hours is carried out, waveguide 200 is obtained；After taking-up, alignment is carried out, thickness is obtained
The bar shaped photoresist mask layer for being 10 μm for 20 μm, width, the stripe-shaped mask layer are located at the surface of waveguide 200；Pass through induction
Coupled plasma etch equipment (ICP) carries out device dry etching 8 hours, uses gas for SF6And Ar, ratio 3:1,
Obtain the convex portion 102 that depth is 3 μm；One layer is grown by PECVD on convex portion 102 and planar section 101
The SiO of 800nm2Buffer layer 500；On buffer layer 500, the phase-modulator electrode pattern of reverse phase is obtained by photoetching alignment,
The plating seed layer of Cr+Au is obtained by filming equipment；By plating, the traveling wave electrode of high thickness is formed on plating seed layer
600, wherein the first electrode 601 in traveling wave electrode 600 is just in the surface of waveguide 200, and width is 8 μm；Remove light
Photoresist, and carry out scribing, cleaning, end face polish to obtain integrated chip；Polarization maintaining optical fibre encapsulation, waveguide are carried out to integrated chip both ends
200 both ends difference face incident light polarization maintaining optical fibre and emergent light polarization maintaining optical fibre, blend compounds water adhesion, while optical fiber clamping piece
800 clampings, prevent movement from loss being caused to increase；High-frequency package finally is carried out to integrated chip, obtains height provided herein
Damage threshold Waveguide Phase Modulator.
The above is only several embodiments of the application, not does any type of limitation to the application, although this Shen
Please disclosed as above with preferred embodiment, however not to limit the application, any person skilled in the art is not taking off
In the range of technical scheme, a little variation or modification are made using the technology contents of the disclosure above and is equal to
Case study on implementation is imitated, is belonged in technical proposal scope.
Claims (10)
1. a kind of high damage threshold Waveguide Phase Modulator, which is characterized in that including crystal sandwich layer and waveguide；
The upper surface of the crystal sandwich layer includes planar section and convex portion, and the convex portion is by the planar section along remote
First direction from the crystal sandwich layer extends outwardly and is formed, and the convex portion is along being parallel to the of the planar section
Two directions extend；
Second direction described in the upper end edge of the convex portion is inwardly formed the groove of connection；
The waveguide is located in the groove, and incident light is propagated in the waveguide along the second direction.
2. high damage threshold Waveguide Phase Modulator according to claim 1, which is characterized in that the cross section of the waveguide
For arch or rectangle.
3. high damage threshold Waveguide Phase Modulator according to claim 1, which is characterized in that the crystal sandwich layer is selected from
Lithium niobate crysal near stoichiometric ratio, magnesium-doped lithium niobate crystal, mix zinc niobate crystalline lithium, near-stoichiometric lithium tantalate crystals,
It mixes magnesium lithium tantalate, mix any one in zinc lithium tantalate.
4. high damage threshold Waveguide Phase Modulator according to claim 1, which is characterized in that it further include substrate, it is described
The lower surface of crystal sandwich layer is fixed by optical cement film layer and the substrate.
5. high damage threshold Waveguide Phase Modulator according to claim 4, which is characterized in that the substrate is selected from silicon
Piece, lithium niobate, lithium tantalate, silicon carbide, quartz in any one.
6. high damage threshold Waveguide Phase Modulator according to claim 4, which is characterized in that it further include buffer layer, institute
It states buffer layer and is covered on the upper surface of the crystal sandwich layer and the upper surface of waveguide.
7. high damage threshold Waveguide Phase Modulator according to claim 6, which is characterized in that the buffer layer is selected from
SiO2、SixNy, any one in DLC film.
8. high damage threshold Waveguide Phase Modulator according to claim 6, which is characterized in that it further include traveling wave electrode,
The traveling wave electrode is covered on the buffer layer；
Wherein, the traveling wave electrode is used to apply modulation voltage to the waveguide.
9. high damage threshold Waveguide Phase Modulator according to claim 6, which is characterized in that the traveling wave electrode includes
First electrode and second electrode,
Wherein, the middle section of the first electrode is covered on the buffer layer above the waveguide, the second electrode difference
It is covered on the buffer layer above the crystal sandwich layer planar section on the first electrode both sides.
10. described in any item high damage threshold Waveguide Phase Modulators according to claim 1~9, which is characterized in that the crystalline substance
Body sandwich layer two end faces perpendicular with incident light propagation direction are fixed to be formed with incident light optical fiber and emergent light optical fiber respectively
It is of coupled connections, so that the incident light optical fiber and emergent light optical fiber are opposite with the waveguide；
Preferably, the incident light optical fiber and emergent light optical fiber include single mode optical fiber, it is multimode fibre, any one in polarization maintaining optical fibre
Kind.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023118926A1 (en) * | 2021-12-20 | 2023-06-29 | Ecole Polytechnique Federale De Lausanne (Epfl) | Ferroelectric device or structure and a method for producing ferroelectric devices or structures |
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| CN108732795A (en) * | 2017-04-14 | 2018-11-02 | 天津领芯科技发展有限公司 | A kind of silicon substrate lithium niobate high-speed optical modulator and preparation method thereof |
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