CN109975926A - A kind of silica load strip waveguide and preparation method thereof - Google Patents
A kind of silica load strip waveguide and preparation method thereof Download PDFInfo
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- CN109975926A CN109975926A CN201910213337.3A CN201910213337A CN109975926A CN 109975926 A CN109975926 A CN 109975926A CN 201910213337 A CN201910213337 A CN 201910213337A CN 109975926 A CN109975926 A CN 109975926A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
Abstract
The invention belongs to load optical slab waveguide technical field, more particularly to a kind of silica load strip waveguide and preparation method thereof.The silica load strip waveguide successively includes: mono-crystalline lithium niobate substrate, silica buffer layer, mono-crystalline lithium niobate film, silica load item from top to bottom, the silica buffer layer is covered on mono-crystalline lithium niobate substrate, mono-crystalline lithium niobate film is covered on silica buffer layer, several described silica load item arrangements are covered on mono-crystalline lithium niobate film.Load optical slab waveguide loss prepared by the present invention is low, only 0.16dB/cm, simultaneously, compared with the mode that other load items are prepared with etching technics, silica load item does not need additional etch step in preparation process of the invention, the preparation of load item, manufacture craft simple and convenient can be realized by anti-technique of shelling, it is easy to accomplish.
Description
Technical field
The invention belongs to load optical slab waveguide technical field, more particularly to a kind of silica load strip waveguide and its
Production method.
Background technique
Lithium niobate is the material being most potential in integrated optics due to its excellent electric light, acousto-optic, non-linear optical property
One of.In addition, one of it or planar optical waveguide (PLC) technique important materials.It is prepared with ion implanting and wafer bonding
Mono-crystalline lithium niobate thin-film material have the physical property close with body material, had a wide range of applications in integrated optics field.
Silica is a kind of with high transmittance, and easily prepared material, it is one of most common material in PLC technology.In addition,
As the core material of optical fiber, silica is the ideal material for preparing waveguide mode size converter.But silica is not
With electric light and nonlinear effect, this will limit its application in terms of integrated optics.Loading optical slab waveguide is integrated optics
The base components of device.Currently, both at home and abroad it has been reported that the material as load item include silicon nitride, titanium dioxide, silicon, five
Aoxidize two tantalums etc..But use silica as the relevant report of load item not yet.
Summary of the invention
For above-mentioned problems of the prior art, the present invention is intended to provide a kind of silica load strip waveguide and
Its production method.The present invention by the combination of silica and lithium niobate, lithium niobate can make silica PLC have electric light and
Nonlinear optical properties, the waveguide of silica can then prepare waveguide mode size converter to realize the PLC of lithium niobate
Coupling between optical fiber, so that the advantage of the two be made to combine well.It is proved by test: dioxy prepared by the present invention
SiClx loads the light major limitation of strip waveguide in LiNbO_3 film, has the characteristics that low-loss.
An object of the present invention is to provide a kind of silica load strip waveguide.
The second object of the present invention is to provide a kind of preparation method of silica load strip waveguide.
The third object of the present invention is to provide the application containing above-mentioned silica load strip waveguide and preparation method thereof.
For achieving the above object, specifically, the invention discloses following technical proposals:
Firstly, the present invention discloses a kind of silica load strip waveguide, it from top to bottom successively include: mono-crystalline lithium niobate
Substrate, silica buffer layer, mono-crystalline lithium niobate film, silica load item, and the silica buffer layer is covered in list
In brilliant lithium niobate substrate, mono-crystalline lithium niobate film is covered on silica buffer layer, and the silica load item is covered on
On mono-crystalline lithium niobate film.
Preferably, the mono-crystalline lithium niobate film with a thickness of 0.4-0.5 μm, the width of silica load item is
2-5 μm, with a thickness of 100-150nm.
It is not influenced by higher order mode when in order to guarantee that light is propagated in the waveguide, single mode condition is one for first having to consider
Factor, present invention discover that the single order mode of quasi- TE and quasi- TM mode respectively appears in lithium niobate thickness in lithium niobate slab guide
When being 0.6 μm and 0.7 μm, therefore, the thickness of lithium niobate is selected as 0.4-0.5 μm by the present invention.In addition, silica loads item
Size be an important factor for influencing distribution of the optical power in lithium niobate, present invention discover that the refractive index due to silica is remote
Less than the refractive index of lithium niobate, so optical power is mainly distributed in LiNbO_3 film, the size of silica is to optical power
Very little is influenced, the thickness of silica is selected as 100-150nm by the present invention, when width is selected as 2-5 μm, the quasi- TE of obtained waveguide
Loss with quasi- TM mode maintains low-level, and the realization of low-level loss waveguide effectively increases the efficiency of transmission of waveguide,
It lays a good foundation for the integrated of integrated optical device multiple on one single chip.
Secondly, the present invention discloses a kind of preparation method of silica load strip waveguide, include the following steps:
(1) prepare that the structure of item is opposite covers with silica load with the method for photoetching on mono-crystalline lithium niobate film
Mould figure；
(2) the mask graph surface cvd silicon dioxide film good in photoetching with the method for magnetron sputtering；
(3) part for having photoresist on silica membrane is removed with anti-stripping technique, the part not being covered by photoresist
The as structure of silica load item obtains silica load strip waveguide semi-finished product；
(4) both ends of the surface of the finally obtained silica load strip waveguide semi-finished product of step (3) are polished to get dioxy
SiClx loads strip waveguide.
In step (2), the technological parameter of the magnetron sputtering are as follows:
In step (3), the method for the removal photoresist is to be got off with acetone soak.
In step (4), can be used the mode of mechanical polishing to the both ends of the surface of silica load strip waveguide semi-finished product into
Row polishing.
Finally, the present invention discloses above-mentioned silica load strip waveguide and preparation method thereof in integrated optics, optic communication
Application in equal fields.
Compared with prior art, the beneficial effect that the present invention obtains is:
(1) low, waveguide loss 0.16dB/cm is lost in load optical slab waveguide prepared by the present invention, far below using other
Optical waveguide of the material as load item preparation.
(2) compared with the mode that other load items are prepared with etching technics, titanium dioxide in preparation process of the invention
Silicon load item does not need additional etch step, the preparation of load item can be realized by anti-technique of shelling, manufacture craft is simply square
Just, it is easy to accomplish.
(3) present invention is by the way that by the combination of silica and lithium niobate, lithium niobate can make the PLC of silica have electricity
Light and nonlinear optical properties, the waveguide of silica can then prepare waveguide mode size converter to realize lithium niobate
Coupling between PLC and optical fiber, so that the advantage of the two be made to combine well, the refractive index of silica is much smaller than niobic acid
The refractive index of lithium, this makes light, and in lithium niobate, the size of silica load item may be implemented flexibly to set major limitation always
Meter.
Detailed description of the invention
The Figure of description for constituting a part of the invention is used to provide further understanding of the present invention, and of the invention shows
Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.
Fig. 1 is that the silica of preparation of the embodiment of the present invention loads optical slab waveguide structural schematic diagram.
Fig. 2 is the mode distribution map that silica prepared by the embodiment of the present invention 1 loads optical slab waveguide.
The quasi- TE of silica load optical slab waveguide and the mode of quasi- TM mode prepared by Fig. 3 embodiment of the present invention 1 is passed
Defeated curve graph.
Attached drawing acceptance of the bid note respectively represents: 1- mono-crystalline lithium niobate substrate, 2- silica buffer layer, 3- mono-crystalline lithium niobate are thin
Film, 4- silica load item.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the present invention.Unless another
It indicates, all technical and scientific terms used herein has usual with general technical staff of the technical field of the invention
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to exemplary embodiments of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
As background technique is introduced, as the core material of optical fiber, silica is to prepare waveguide mode size to turn
The ideal material of parallel operation.But silica does not have electric light and nonlinear effect, this will limit it in terms of integrated optics
Using.For this purpose, the present invention proposes that a kind of silica loads strip waveguide and preparation method thereof, it is with reference to the accompanying drawing and specific real
Applying mode, the present invention is further described.
Embodiment 1
As shown in Figure 1, a kind of silica loads strip waveguide, it from top to bottom successively include: mono-crystalline lithium niobate substrate
1, silica buffer layer 2, mono-crystalline lithium niobate film 3, silica load item 4, and the silica buffer layer 2 is covered in list
In brilliant lithium niobate substrate 1, mono-crystalline lithium niobate film 3 is covered on silica buffer layer 2, and the silica load item 4 covers
It covers on mono-crystalline lithium niobate film 3.
Embodiment 2
The preparation method of silica load strip waveguide, includes the following steps: in a kind of embodiment 1
(1) prepare that the structure of item is opposite covers with silica load with the method for photoetching on mono-crystalline lithium niobate film
Mould figure, the mono-crystalline lithium niobate film with a thickness of 0.5 μm；
(2) the mask graph surface cvd silicon dioxide film good in photoetching with the method for magnetron sputtering；
(3) there will be the part of photoresist to be removed on silica membrane with acetone with anti-stripping technique, be not covered by photoresist
Part be silica load item structure, the width of silica load item is 2 μm, with a thickness of 120nm, is obtained
Silica loads strip waveguide semi-finished product；
(4) by the finally obtained silica load strip waveguide semi-finished product of step (3) by the way of mechanical polishing
Both ends of the surface polishing loads strip waveguide to get silica.
In step (2), the technological parameter of the magnetron sputtering is as shown in table 1:
Table 1
Embodiment 3
The preparation method of silica load strip waveguide, includes the following steps: in a kind of embodiment 1
(1) prepare that the structure of item is opposite covers with silica load with the method for photoetching on mono-crystalline lithium niobate film
Mould figure, the mono-crystalline lithium niobate film with a thickness of 0.4 μm；
(2) the mask graph surface cvd silicon dioxide film good in photoetching with the method for magnetron sputtering；
(3) there will be the part of photoresist to be removed on silica membrane with acetone with anti-stripping technique, be not covered by photoresist
Part be silica load item structure, the width of silica load item is 3 μm, with a thickness of 150nm, is obtained
Silica loads strip waveguide semi-finished product；
(4) by the finally obtained silica load strip waveguide semi-finished product of step (3) by the way of mechanical polishing
Both ends of the surface polishing loads strip waveguide to get silica.
In step (2), the technological parameter of the magnetron sputtering is as shown in table 2:
Table 2
Embodiment 4
The preparation method of silica load strip waveguide, includes the following steps: in a kind of embodiment 1
(1) prepare that the structure of item is opposite covers with silica load with the method for photoetching on mono-crystalline lithium niobate film
Mould figure, the mono-crystalline lithium niobate film with a thickness of 0.5 μm；
(2) the mask graph surface cvd silicon dioxide film good in photoetching with the method for magnetron sputtering；
(3) there will be the part of photoresist to be removed on silica membrane with acetone with anti-stripping technique, be not covered by photoresist
Part be silica load item structure, the width of silica load item is 4 μm, with a thickness of 100nm, is obtained
Silica loads strip waveguide semi-finished product；
(4) by the finally obtained silica load strip waveguide semi-finished product of step (3) by the way of mechanical polishing
Both ends of the surface polishing loads strip waveguide to get silica.
In step (2), the technological parameter of the magnetron sputtering is as shown in table 3:
Table 3
Experimental example 1
A kind of titanium dioxide load strip waveguide, with embodiment 2, difference is for structure and preparation method: the load
The material of item is titanium dioxide.
Experimental example 2
A kind of silicon nitride load strip waveguide, with embodiment 2, difference is for structure and preparation method: the load item
Material be silicon nitride.
Experimental example 3
A kind of amorphous silicon load strip waveguide, with embodiment 2, difference is for structure and preparation method: the load item
Material be silicon.
Performance test:
(1) the mode distribution map for the silica load optical slab waveguide that prepared by embodiment 1 is as shown in Figure 2, wherein Fig. 2
It (a) is the quasi- TE mode distribution map of waveguide, Fig. 2 (b) is the quasi- TM mode distribution map of waveguide, the available transmission light from Fig. 3
Strong maximum value and minimum value ImaxAnd IMin,Numerical value is substituted into formula (1), the transmission loss of waveguide can be acquired.
In formula (1),
(2) present invention measures the loss of the waveguide prepared in above-mentioned specific embodiment using Fabry-Perot method,
Wherein, test results are shown in figure 3 for the silica load optical slab waveguide that prepared by embodiment 1, and Fig. 3 (a) is the standard of waveguide
Test result under TE mode, Fig. 3 (b) are the test result under the quasi- TM mode of waveguide.Finally obtained waveguide loss result
As shown in table 4.
Table 4
From table 4, it can be seen that the load optical slab waveguide loss of preparation of the embodiment of the present invention is generally several far below with other
Optical waveguide of the kind material as load item preparation；This is because silica has good transmitance near infrared band, keep away
Absorption loss caused by being absorbed by material is exempted from.
In addition, the principal element for influencing load optical slab waveguide includes the thickness of LiNbO_3 film, silica loads item
Width and thickness etc..The present invention first studies the thickness of LiNbO_3 film, in order to guarantee that light is propagated in the waveguide
When do not influenced by higher order mode, single mode condition be the present invention first have to consider a factor.It is obtained by simulating the present invention
The single order mode of quasi- TE and quasi- TM mode respectively appears in lithium niobate with a thickness of 0.6 μm and 0.7 μm in lithium niobate slab guide
When, so the thickness of lithium niobate is selected as 0.4-0.5 μm by the present invention.The size of silica load item is to influence optical power to exist
An important factor for distribution in lithium niobate, by simulation present invention discover that since the refractive index of silica is much smaller than lithium niobate
Refractive index, so optical power is mainly distributed in LiNbO_3 film, influence very little of the size of silica to optical power.Experiment
The thickness of silica is selected as 100-150nm by the middle present invention, and width is selected as 2-5 μm.
The above description is only a preferred embodiment of the present invention, is not intended to restrict the invention, for those skilled in the art
For member, the invention may be variously modified and varied.All within the spirits and principles of the present invention, it is made it is any modification,
Equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of silica loads strip waveguide, which is characterized in that its successively include: from top to bottom mono-crystalline lithium niobate substrate,
Silica buffer layer, mono-crystalline lithium niobate film, silica load item, and the silica buffer layer is covered in monocrystalline niobic acid
On lithium substrate, mono-crystalline lithium niobate film is covered on silica buffer layer, and the silica load item is covered on monocrystalline niobium
On sour lithium film.
2. silica as described in claim 1 loads strip waveguide, which is characterized in that the thickness of the mono-crystalline lithium niobate film
Degree is 0.4-0.5 μm.
3. silica as described in claim 1 loads strip waveguide, which is characterized in that the width of the silica load item
Degree is 2-5 μm.
4. silica as described in claim 1 loads strip waveguide, which is characterized in that the width of the silica load item
With a thickness of 100-150nm.
5. the preparation method of silica load strip waveguide according to any one of claims 1-4, which is characterized in that including
Following steps:
(1) mask artwork opposite with the silica load structure of item is prepared with the method for photoetching on mono-crystalline lithium niobate film
Shape；
(2) the mask graph surface cvd silicon dioxide film good in photoetching with the method for magnetron sputtering；
(3) part for having photoresist on silica membrane is removed with anti-stripping technique, the part not being covered by photoresist is
Silica loads the structure of item, obtains silica load strip waveguide semi-finished product；
(4) both ends of the surface of the finally obtained silica load strip waveguide semi-finished product of step (3) are polished to get silica
Load strip waveguide.
6. the preparation method of silica load strip waveguide as claimed in claim 5, which is characterized in that in step (2), institute
State the technological parameter of magnetron sputtering are as follows: in step (2), the technological parameter of the magnetron sputtering are as follows: base vacuum 3 × 10-4~7 ×
10-4Pa, operating air pressure 2.5~5Pa, Ar 15~30sccm of flow, 40~60W of radio-frequency power, sample and range are from 9~10cm.
7. the preparation method of silica load strip waveguide as claimed in claim 5, which is characterized in that in step (3), institute
The method for stating removal photoresist is to be got off with acetone soak.
8. the preparation method of silica load strip waveguide as claimed in claim 5, which is characterized in that in step (4), adopt
It is polished with both ends of the surface of the mode of mechanical polishing to silica load strip waveguide semi-finished product.
9. silica load strip waveguide according to any one of claims 1-4 is in integrated optics, optical communication field
Using.
10. such as application of the described in any item preparation methods of claim 5-8 in integrated optics, optical communication field.
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| CN111965755A (en) * | 2020-08-28 | 2020-11-20 | 济南晶正电子科技有限公司 | Loading strip type optical waveguide integrated structure and preparation method thereof |
| CN111983750A (en) * | 2020-08-28 | 2020-11-24 | 济南晶正电子科技有限公司 | Silicon dioxide loaded strip-shaped optical waveguide integrated structure and preparation method thereof |
| CN112596156A (en) * | 2020-12-18 | 2021-04-02 | 海南师范大学 | GOI or SOI based beam splitting/combining waveguide and preparation method thereof |
| CN115508949A (en) * | 2022-11-09 | 2022-12-23 | 山东师范大学 | Preparation method of nonlinear optical waveguide based on bound state mechanism in continuous domain |
| CN116299857A (en) * | 2023-02-09 | 2023-06-23 | 江苏浦丹光电技术有限公司 | Lithium niobate thin film optical waveguide and preparation method thereof |
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| CN111965755A (en) * | 2020-08-28 | 2020-11-20 | 济南晶正电子科技有限公司 | Loading strip type optical waveguide integrated structure and preparation method thereof |
| CN111983750A (en) * | 2020-08-28 | 2020-11-24 | 济南晶正电子科技有限公司 | Silicon dioxide loaded strip-shaped optical waveguide integrated structure and preparation method thereof |
| CN111965755B (en) * | 2020-08-28 | 2022-09-20 | 济南晶正电子科技有限公司 | Loading strip type optical waveguide integrated structure and preparation method thereof |
| CN112596156A (en) * | 2020-12-18 | 2021-04-02 | 海南师范大学 | GOI or SOI based beam splitting/combining waveguide and preparation method thereof |
| CN115508949A (en) * | 2022-11-09 | 2022-12-23 | 山东师范大学 | Preparation method of nonlinear optical waveguide based on bound state mechanism in continuous domain |
| CN115508949B (en) * | 2022-11-09 | 2024-01-30 | 山东师范大学 | Preparation method of nonlinear optical waveguide based on constraint state mechanism in continuous domain |
| CN116299857A (en) * | 2023-02-09 | 2023-06-23 | 江苏浦丹光电技术有限公司 | Lithium niobate thin film optical waveguide and preparation method thereof |
| CN116299857B (en) * | 2023-02-09 | 2024-05-07 | 江苏浦丹光电技术有限公司 | Lithium niobate thin film optical waveguide and preparation method thereof |
| CN116430515A (en) * | 2023-04-17 | 2023-07-14 | 中山大学 | Waveguide device based on sulfide and lithium niobate |
| CN116430515B (en) * | 2023-04-17 | 2024-01-19 | 中山大学 | Waveguide device based on sulfide and lithium niobate |
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