CN110727052A - Preparation method of low-loss infrared high-nonlinearity optical waveguide - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
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- 238000000034 method Methods 0.000 claims abstract description 36
- 238000005253 cladding Methods 0.000 claims abstract description 34
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 28
- 238000010894 electron beam technology Methods 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 18
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 238000012360 testing method Methods 0.000 claims abstract description 9
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- 229920000642 polymer Polymers 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 11
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- 238000004140 cleaning Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
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- 239000013307 optical fiber Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention relates to the field of micro-nano processing of on-chip waveguides, in particular to a preparation method of a low-loss infrared high-nonlinearity optical waveguide. The method comprises the following steps: s1, analyzing the transmission characteristics of the chalcogenide optical waveguide in the infrared wave band; s2, analyzing the influence of each parameter of electron beam exposure and the type of electron beam glue on the preparation of the chalcogenide waveguide, selecting proper exposure parameters and the type of electron beam glue to prepare a mask, and realizing the preparation of the waveguide through plasma reaction etching; s3, secondly, realizing the growth of a polymer cladding by a spin-coating method; and S4, finally, smoothing the side wall of the waveguide again by combining a cladding thermal annealing process, and performing loss test by a truncation method. According to the invention, the preparation of the on-chip chalcogenide waveguide with ultralow loss is realized by optimizing the electron beam exposure and adjusting the etching parameters of the plasma reaction and combining the thermal annealing process, and the preparation method is suitable for preparing large-scale high-nonlinearity photonic integrated devices.
Description
Technical Field
The invention relates to the field of micro-nano processing and nonlinear optics, in particular to a preparation method of a low-loss infrared high-nonlinearity optical waveguide.
Background
The infrared wave band comprises a near wave band, a middle wave band and a far infrared wave band, wherein the near infrared wave band comprises a communication wave band, and the middle and far infrared wave bands comprise fingerprint regions of a plurality of biological molecules, typical toxic gases and dangerous goods molecules and an atmospheric greenhouse gas fluorescence spectrum wave band, so that the infrared waveguide with high integration has extremely important research significance. In addition, infrared waveguides also have important application backgrounds in the fields of laser transmission, thermal pixel transmission, infrared spectrum research and the like.
At present, the on-chip infrared waveguide mainly uses germanium, silicon, sulfur and other materials: the germanium waveguide has large loss in the infrared waveguide, and the transmission waveband is mainly 3 mu m later, the germanium waveguide does not contain a communication waveband, while the silicon waveguide has the problems of serious two-photon absorption, large loss, transmission waveband limitation, preparation difficulty and the like.
The chalcogenide waveguide is an amorphous material formed by covalent bonds of sulfur, selenium, tellurium and other metals and non-metallic materials, has the advantages of very wide transmission waveband (from a visible light waveband to 20 mu m), high nonlinearity, extremely low two-photon absorption and the like, and is easy to prepare a thin film by methods such as thermal evaporation, magnetron sputtering and the like and process the thin film into the waveguide; however, the chalcogenide waveguide also has the problems of large loss and the like at present, and the application performance of the chalcogenide waveguide is severely limited. The main reason is that the sidewall of the chalcogenide waveguide has very large scattering due to the rough sidewall caused by the non-uniform etching rate in the chalcogenide waveguide processing process, so that the chalcogenide waveguide has large loss.
Disclosure of Invention
The invention provides a preparation method of a low-loss infrared high-nonlinearity optical waveguide, aiming at overcoming the defects in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that: a preparation method of a low-loss infrared high-nonlinearity optical waveguide comprises the following steps:
s1, analyzing the transmission characteristics of the chalcogenide optical waveguide in the infrared wave band;
s2, analyzing the influence of each parameter of electron beam exposure and the type of electron beam glue on the preparation of the chalcogenide waveguide, and realizing the preparation of the waveguide through plasma reaction etching;
s3, realizing the growth of a polymer cladding by a spin-coating method;
and S4, combining a cladding thermal annealing process, placing the waveguide device in an annealing furnace, heating to a temperature exceeding the glass transition temperature of the chalcogenide material so as to enable the waveguide to be in a molten state, enabling the side wall of the waveguide to be relatively smooth under the action of surface tension, and carrying out loss test by a truncation method.
Preferably, the cross-sectional structure of the waveguide is a ridge or a rectangle, and the selected material is a chalcogenide material.
Preferably, in the selected waveguide structure, if the structure is a rectangular waveguide, the cross-sectional width ranges from 1 micron to 10 microns, and the height ranges from 300 nm to 5 microns, and if the structure is a ridge waveguide, the ridge height is designed according to the transmission band requirement.
Preferably, the waveguide structure comprises a lower cladding, a core, and an upper cladding; the refractive index of the fiber core is higher than that of the upper and lower cladding layers, and the contact interface between the fiber core and the cladding layers is smooth.
Preferably, the preparation of the low-loss infrared chalcogenide optical waveguide is realized by adjusting plasma reaction etching parameters, and the etching process comprises chemical etching and physical etching; the chemical etching mainly uses CHF3 or CF4+ H2 gas; physical etching is achieved by Ar or He gas.
Preferably, the cladding of the low-loss infrared chalcogenide waveguide is rotated for 1 minute by a spin coater at a rotating speed of 2000rpm by the spin coater to grow a polymer cladding above the waveguide, and the waveguide device is placed in an annealing furnace in combination with a cladding thermal annealing process and heated for 8-12 hours at a temperature of 200-240 ℃ depending on the specific material.
Preferably, the truncation test requires the inclusion of at least two waveguide structures of different lengths. Ensuring that the effects of end-face coupling and coupling errors are eliminated.
Preferably, the waveguide structure is capable of measuring the transmission power, loss factor and operating frequency of the waveguide transmission.
Compared with the prior art, the beneficial effects are: the invention realizes the preparation of the high-nonlinear waveguide with high precision and low side wall roughness by electron beam exposure and adjustment of etching parameters of plasma reaction and combination of a thermal annealing process, and provides a preparation method of the low-loss infrared chalcogenide waveguide compared with the traditional photoetching, thereby realizing the low-loss transmission of infrared waveband light waves.
Drawings
FIG. 1 is a cross-sectional view of a waveguide of the present invention.
FIG. 2 is a SEM representation of a ridge waveguide of the present invention.
FIG. 3 is a simulated electric field pattern of the ridge waveguide of the present invention.
FIG. 4 is a flow chart of the preparation of the present invention.
FIG. 5 is a schematic diagram of a test system according to the present invention.
Detailed Description
The drawings are for illustration purposes only and are not to be construed as limiting the invention; for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationships depicted in the drawings are for illustrative purposes only and are not to be construed as limiting the invention.
Example 1:
as shown in fig. 4, the present embodiment is described with reference to fig. 1 to 5, and as shown in fig. 1, the low-loss infrared chalcogenide optical waveguide includes: the silicon substrate 201, the lower cladding 202, the fiber core 203 and the upper cladding 204 are arranged from bottom to top in sequence; the lower cladding 202 is silica; a core 203 having an incident surface and an exit surface and provided on the lower cladding 202 cladding is an infrared chalcogenide; and the upper cladding 204 embedding the cores 203 is air; the core 203 has a refractive index greater than that of the upper and lower claddings, and the interfaces between the core 203 and the upper and lower claddings 204, 202 are smooth.
The embodiment provides a preparation method of a low-loss infrared chalcogenide waveguide, relates to the fields of micro-nano processing and nonlinear optics, and particularly relates to low-loss optical wave transmission in a waveguide, wherein the specific steps comprise the following steps: analyzing the transmission characteristics of the chalcogenide optical waveguide infrared band light wave; step two: analyzing the influence of each parameter of electron beam exposure and electron beam glue on the preparation of the chalcogenide waveguide, selecting proper exposure parameters and electron beam glue to prepare a mask, and realizing the preparation of the waveguide through plasma reaction etching; step three: the growth of the polymer cladding is realized by a spin-coating method; step four: and combining a cladding thermal annealing process, placing the device in an annealing furnace, heating to a temperature higher than the glass transition temperature of the chalcogenide waveguide so as to enable the waveguide to be in a molten state, and enabling the side wall to become relatively smooth under the action of surface tension so as to reduce the transmission loss of the waveguide, and performing loss test by a truncation method.
In the waveguide structure, the section length is 2 microns, the ridge height is 0.5 microns, and the total height is 0.8 microns, so that the waveguide structure can be well matched with the Gaussian mode of the optical fiber in size, and the coupling loss is reduced.
In addition, the waveguide structure includes a lower cladding, a core, and an upper cladding. The refractive index of the fiber core is higher than that of the upper and lower claddings, and the contact interface between the fiber core and the claddings is smooth.
In the present embodimentThe preparation method of the low-loss infrared chalcogenide waveguide is realized by adjusting the reactive plasma etching parameters, and Ar and CHF are mainly used in the etching process3Two reactive species.
The method specifically comprises the following steps:
the method comprises the following steps: cleaning: the substrate of the structure to be prepared is cleaned by a certain means, so that the glue thickness is more uniform in the gluing process. Currently, the mainstream cleaning method is a three-step cleaning method, i.e. respectively performing ultrasonic cleaning in acetone, isopropanol and deionized water for 10 minutes by an ultrasonic cleaning machine. Then, the moisture on the surface of the film is removed through soft baking, and the adhesion between the film and the electron beam glue is enhanced.
Step two: gluing: the substrate is placed on a spin coater and is adsorbed by a vacuum pump. The selected positive e-beam glue is then dropped onto the substrate by a pipette until the entire substrate is covered with the e-beam glue. And finally, running the designed spin-coating program. After the spin coating was completed, the substrate was placed on a heating stage and prebaked at 150 ℃.
Step three: sample introduction: the previously prepared sample is transported to the exposure chamber through the sample stage.
Step four: exposure: the designed layout is exposed on the electron beam glue through the electron beam, so that the exposed part is denatured.
Step five: and (3) developing: and removing the electron beam glue at the exposed part by using the corresponding developing solution, and remaining other redundant electron beam glue.
Step six: etching and removing photoresist: the sample is attached to a carrier plate of a reactive ion etcher. Then, vacuumizing is carried out, the sample is sent into the reaction cavity, and the set program is operated. The key point is that Ar and CHF are well arranged3Parameters of two reaction substances and working power in the reaction process. And after etching, putting the sample into a reactive ion etching machine to operate a photoresist removing program again, and removing the residual electron beam photoresist.
Step seven: growing a cladding layer and thermally annealing: the polymer cladding was applied over the entire waveguide structure by spin coating. Finally, the sample was placed in an annealing furnace and heated at 220 ℃ for 12 hours at a specific temperature depending on the specific material.
Example 2
The present embodiment is described with reference to fig. 5, and the present embodiment compares the input and output powers of waveguides having different lengths, and then calculates the waveguide loss factor by using the difference between the output powers of the two waveguides having different lengths.
The test system is a test scheme of the waveguide loss factor and comprises the following steps:
the method comprises the following steps: firstly, the prepared waveguide structure is placed on an adsorption table, and the structure is guaranteed not to shake in the test process.
Step two: the lens optical fiber passes through the three-dimensional adjusting frame, the rough adjustment is carried out on the two input and output ends of the alignment waveguide, the observation is carried out through the CCD, a beam of light source with an infrared waveband and a wavelength of 10dBm is input at the input end, a power meter is connected at the output end, the lens optical fiber is just aligned to the input and output ports of the waveguide through the fine adjustment of the three-dimensional adjusting frame, the observation can be carried out through the power meter, and the maximum output is the output of a beam of light after the coupling and. And similarly, measuring the output power of other waveguides with different lengths. In the present embodiment, the measured length of the long waveguide L28.28cm, the output power of the input beam after passing through the length of waveguide is-0.84 dBm, short waveguide length L1The output power of the input beam after passing through the length of waveguide was 1.10dBm, 0.7 cm. Formula α ═ P for calculating waveguide loss factor according to truncation method2-P1)/(L2-L1) The waveguide loss factor α is calculated to be 0.26 dB/cm. The loss factor is a low loss line at present under the same waveguide size in the infrared chalcogenide waveguide.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (6)
1. A preparation method of a low-loss infrared high-nonlinearity optical waveguide is characterized by comprising the following steps:
s1, analyzing the transmission characteristics of the chalcogenide optical waveguide in the infrared wave band;
s2, analyzing the influence of each parameter of electron beam exposure and the type of electron beam glue on the preparation of the chalcogenide waveguide, and realizing the preparation of the waveguide through plasma reaction etching;
s3, realizing the growth of a polymer cladding by a spin-coating method;
and S4, combining a cladding thermal annealing process, placing the waveguide device in an annealing furnace, heating to a temperature exceeding the glass transition temperature of the chalcogenide material so as to enable the waveguide to be in a molten state, enabling the side wall of the waveguide to be relatively smooth under the action of surface tension, and carrying out loss test by a truncation method.
2. The method according to claim 1, wherein the cross-sectional structure of the waveguide is ridge-shaped or rectangular, and the selected material is chalcogenide material.
3. The method of claim 2, wherein the selected waveguide structure has a cross-sectional width in the range of 1 micron to 10 microns and a height in the range of 300 nm to 5 microns if the structure is a rectangular waveguide, and a ridge height according to the transmission band requirement if the structure is a ridge waveguide.
4. The method of claim 2, wherein the waveguide structure comprises a lower cladding, a core, and an upper cladding; the refractive index of the fiber core is higher than that of the upper and lower cladding layers, and the contact interface between the fiber core and the cladding layers is smooth.
5. The method according to claim 1, wherein the low-loss infrared high-nonlinearity optical waveguide is prepared by adjusting plasma reactive etching parameters, and the etching process comprises chemical etching and physical etching; CHF is mainly used for chemical etching3Or CF4+H2A gas; physical etching is achieved by Ar or He gas.
6. The method of any one of claims 1 to 5, wherein the waveguide is heated in an annealing furnace at 200 ℃ to 240 ℃ for 8 to 12 hours, depending on the specific material, in combination with a thermal annealing process of the cladding layer by spin coating, i.e. spin coating with a spin coater at a rotation speed of 2000rpm for 1 minute.
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Cited By (3)
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| CN111427118A (en) * | 2020-03-25 | 2020-07-17 | 中山大学 | Efficient three-dimensional sulfide end face coupler applied to communication waveband and preparation method thereof |
| CN112067569A (en) * | 2020-08-19 | 2020-12-11 | 吉林大学 | Slit optical waveguide sensor based on surface-enhanced infrared absorption spectrum and preparation and detection methods thereof |
| CN112540429A (en) * | 2020-12-18 | 2021-03-23 | 南昌大学 | Preparation of low-loss As20S80Chalcogenide glass tunnel optical waveguide method |
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Cited By (4)
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| CN111427118A (en) * | 2020-03-25 | 2020-07-17 | 中山大学 | Efficient three-dimensional sulfide end face coupler applied to communication waveband and preparation method thereof |
| CN112067569A (en) * | 2020-08-19 | 2020-12-11 | 吉林大学 | Slit optical waveguide sensor based on surface-enhanced infrared absorption spectrum and preparation and detection methods thereof |
| CN112067569B (en) * | 2020-08-19 | 2021-09-28 | 吉林大学 | Slit optical waveguide sensor based on surface-enhanced infrared absorption spectrum and preparation and detection methods thereof |
| CN112540429A (en) * | 2020-12-18 | 2021-03-23 | 南昌大学 | Preparation of low-loss As20S80Chalcogenide glass tunnel optical waveguide method |
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