CN103760691B - Multi-mode interference-type photoswitch of a kind of polarization state control and preparation method thereof - Google Patents
Multi-mode interference-type photoswitch of a kind of polarization state control and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of multi-mode interference-type photoswitch of polarization state control, comprise planar lightwave circuit chip, light source, Polarization Controller and input optical fibre array, planar lightwave circuit chip comprises silicon substrate, silica cushion, waveguide and cover layer, in silica cushion, be provided with crackle, waveguide comprises input stage single mode waveguide, intergrade multimode waveguide, output stage single mode waveguide; The light input end of light source and Polarization Controller is connected, and the light output end of Polarization Controller is connected with the input of input optical fibre array. The on off state of this multi-mode interference-type photoswitch is adjustable, and have thermally-stabilised, low nonlinearity, low transmission loss, wide bandwidth of operation, highly integrated, with single-mode fiber efficient coupling, low price and advantages of simple structure and simple. Meanwhile, the present invention also discloses the preparation method of this photoswitch, and the method is simple, cost is low, can batch making photoswitch.
Description
Technical field
The invention belongs to integrated photonic device technical field, specifically, relate to a kind of multimode of polarization state controlInterfere type photoswitch and preparation method thereof.
Background technology
Photoswitch is a kind of Primary Component that can carry out to the optical signal in optical transmission process Channel-shifted, canThe Route Selection, wavelength that is widely used in full photosphere select and the realization of the function such as optical cross connect on. According to workMake medium classification, photoswitch can be divided into free space photoswitch peace face waveguide type (being called for short in literary composition: PLC type)Photoswitch.
PLC type photoswitch utilizes semiconductor technology preparation, have compact conformation, can batch making, stability is highEtc. advantage. Wherein based on silica on silicon (English full name: Silica-on-Silicon is called for short in literary composition: SoS) workThe PLC type photoswitch of skill is to be early applied to the PLC device in optic communication, sensor-based system; And it hasThe feature such as thermally-stabilised, low nonlinearity, high bandwidth, integrated height and cost are low. Existing adjustable PLC type photoswitchThe principles such as the main electrooptic effect by material, thermo-optic effect, magneto-optic effect, acoustooptical effect, need to add foldingIt is adjustable that the refractive index that the rate modulation module of penetrating changes multimode waveguide realizes on off state, and manufacture craft difficulty is large, knotStructure complexity, cost is higher.
Summary of the invention
Technical problem: technical problem to be solved by this invention is: the multiple-mode interfence that a kind of polarization state control is providedType photoswitch, this multi-mode interference-type photoswitch has that on off state is adjustable, thermally-stabilised, low nonlinearity, low transmissionLoss, wide bandwidth of operation, highly integrated, with single-mode fiber efficient coupling, low price, and simple in structure etc.Advantage. Meanwhile, the present invention also provides the preparation method of photoswitch, and this preparation method is simple, cost is low, can criticizeAmount is made photoswitch.
Technical scheme: for solving the problems of the technologies described above, the technical solution used in the present invention is:
A multi-mode interference-type photoswitch for polarization state control, this photoswitch comprises planar lightwave circuit chip, lightSource, Polarization Controller and input optical fibre array, planar lightwave circuit chip comprises silicon substrate, is grown in silicon substrateThe silica cushion of top, be grown in the waveguide of silica cushion top, be grown in waveguide topCover layer, is provided with crackle in silica cushion, and waveguide comprises input stage single mode waveguide, intergrade multimode rippleLead, n output stage single mode waveguide, n is more than or equal to 2 even number; The light input of light source and Polarization ControllerEnd connects, and the light output end of Polarization Controller is connected with the input of input optical fibre array, input optical fibre arrayOutput is connected with the input of input stage single mode waveguide, the output of input stage single mode waveguide and intergrade multimodeThe input of waveguide connects, and the input of the output of intergrade multimode waveguide and n output stage single mode waveguide connectsConnect.
Further, described crackle is linear.
A preparation method for the multi-mode interference-type photoswitch of above-mentioned polarization state control, this preparation method comprise withLower step:
Step 10) prepare planar lightwave circuit chip, specifically comprise step 101) to step 104):
Step 101): get a silicon chip as silicon substrate, utilize wet chemistry method cleaning silicon chip, utilize thermal oxidation methodOn silicon substrate, prepare silica cushion, utilize plasma enhanced chemical vapor deposition method in titanium dioxideThe germanium dioxide that adulterates in silicon obtains ducting layer, utilizes between ducting layer and silica cushion thermal coefficient of expansionDifference is introduced crackle by the thermal stress of controlling in course of reaction in silica cushion;
Step 102): utilize photoetching and etching technics, prepare waveguide on ducting layer, waveguide comprises input stageSingle mode waveguide, intergrade multimode waveguide and n output stage single mode waveguide, the output of input stage single mode waveguide withThe input of intergrade multimode waveguide connects, the output of intergrade multimode waveguide and n output stage single mode waveguideInput connect;
Step 103): utilize the high annealing heating process cover layer of growing above waveguide;
Step 104): section is ground, and makes the planar lightwave circuit chip of oblique 8 °;
Step 20) interface unit: light source, Polarization Controller and input optical fibre array are placed in to planar lightwave circuitChip the same side, and the light input end of light source and Polarization Controller is connected, the light output end of Polarization Controller and defeatedThe input that enters fiber array connects, input stage in the output of input optical fibre array and planar lightwave circuit chipThe input of single mode waveguide connects.
Beneficial effect: compared with prior art, tool of the present invention has the following advantages:
(1) technology difficulty is low. The multi-mode interference-type photoswitch of a kind of polarization state control of the present invention is by passivePLC cake core is realized photoswitch; Because cushion exists crackle, crackle can be to different polarization states light signal generatingDifferent impacts, the resonance phenomena of the input light that then causes different polarization states in input stage single mode waveguide, inInterference in intercaste multimode waveguide is all not identical, finally makes multi-mode interference-type photoswitch to different polarization statesInput light has different on off states not identical. But existing adjustable PLC type photoswitch need to be made activePLC cake core is realized switching function, main by electrooptic effect, thermo-optic effect, magneto-optic effect, the sound of materialIt is adjustable that the refractive index of the principle change multimode waveguides such as luminous effect realizes on off state. Make active PLC cake coreTechnology difficulty is higher than passive PLC cake core.
(2) structure and modulator approach are simple. The multi-mode interference-type photoswitch of a kind of polarization state control of the present inventionSelf is without adding control module, simple in structure. The present invention changes the inclined to one side of input light by external Polarization ControllerThe state of shaking, can realize multiple practical plan, thereby can be widely used in optic communication, optical information processing and photon/ photoelectron is integrated. And need to adding modulation module, existing adjustable multi-mode interference-type photoswitch changes multimode rippleIt is adjustable that the refractive index of leading realizes on off state, complex structure, and cost is higher.
(3) low nonlinearity, low-loss and high thermal stability. In the present invention, SoS type PLC multi-mode interference-typeOptical switch chip is made based on quartz glass, determines that by material behavior it has extremely low loss, can arrive0.01dB/cm, this is that other materials is beyond one's reach. Because quartz material is isotropic material, thereby certainlyFixed have based on SoS type PLC type multi-mode interference-type optical switch chip extremely low non-linear, thereby can makePhotoswitch is applicable to high-octane transmission.
(4) wide bandwidth of operation. Multi-mode interference-type photoswitch of the present invention adopts SoS type PLC chip, based onQuartz glass is made. SoS type PLC chip has wider bandwidth of operation, can be at ruddiness to near-infrared modelEnclose interior work, thereby can make photoswitch be applicable to multi-wavelength's transmission.
(5) high coupling efficiency. The multi-mode interference-type photoswitch of polarization state control of the present invention, adopts SoS typePLC chip, makes based on quartz glass. Due to quartz glass refractive index and single-mode fiber refractive index very approaching;And determine that by single mode condition PLC waveguide dimensions and single-mode fiber also have good size and mate. Therefore,Multi-mode interference-type photoswitch of the present invention and single-mode fiber have fabulous coupling efficiency, can be less than the every end of 0.1dBMouthful.
(6) preparation technology's compatibility is good, and cost is low. The present invention is based on SoS fiber waveguide technique and prepare chip,Possesses the high feature of PLC technique integrated level.
Brief description of the drawings
Fig. 1 is the top view of the embodiment of the present invention 1.
Fig. 2 is the side view of the embodiment of the present invention 1.
Fig. 3 is the top view of the planar lightwave circuit chip that completes of the embodiment of the present invention 2.
Fig. 4 is the waveguide cross-section schematic diagram that the embodiment of the present invention 2 completes.
Fig. 5 is the waveguide cross-section schematic diagram that the embodiment of the present invention 2 completes after cover layer.
Fig. 6 is in test provided by the invention, mechanical type three encircle Polarization Controller three encircle angle and be respectively-90 °,Optical field distribution figure under the polarization state of 45 ° ,-30 °.
Fig. 7 is in test provided by the invention, mechanical type three encircle Polarization Controller three encircle angle be respectively 10 °,Optical field distribution figure under the polarization state of-90 ° ,-80 °.
Fig. 8 is in test provided by the invention, mechanical type three encircle Polarization Controller three encircle angle be respectively 45 °,Optical field distribution figure under the polarization state of 70 ° ,-45 °.
Fig. 9 is in test provided by the invention, mechanical type three encircle Polarization Controller three encircle angle be respectively 85 °,Optical field distribution figure under the polarization state of 50 ° ,-95 °.
In figure, have: silicon substrate 1, silica cushion 2, ducting layer 3, waveguide 4, cover layer 5, crackle 6,Input stage single mode waveguide 401, intergrade multimode waveguide 402, output stage single mode waveguide 403, the first output stage listMould waveguide 4031, the second output stage single mode waveguide 4032, the 3rd output stage single mode waveguide 4033, the 4th output stageSingle mode waveguide 4034, light source 7, Polarization Controller 8, input optical fibre array 9.
Detailed description of the invention
For further illustrating content of the present invention and feature, below in conjunction with accompanying drawing, the invention will be further described,But the present invention is not only limited to embodiment.
The multi-mode interference-type photoswitch of a kind of polarization state control of the present invention, comprises planar lightwave circuit chip, lightSource 7, Polarization Controller 8 and input optical fibre array 9. Planar lightwave circuit (PLC) chip comprise silicon substrate 1,Be grown in silicon substrate 1 top silica cushion 2, be grown in the waveguide 4 of silica cushion 2 tops,The cover layer 5 that is grown in waveguide 4 tops, is provided with crackle 6 in silica cushion 2. Waveguide 4 comprises input stageSingle mode waveguide 401, intergrade multimode waveguide 402, n output stage single mode waveguide 403. N is more than or equal to 2 idolNumber. For example, n is 4. Light source 7 is connected with the light input end of Polarization Controller 8, the light output of Polarization Controller 8End is connected with the input of input optical fibre array 9, the output of input optical fibre array 9 and input stage single mode waveguide401 input connects, the input of the output of input stage single mode waveguide 401 and intergrade multimode waveguide 402Connect, the output of intergrade multimode waveguide 402 is connected with the input of n output stage single mode waveguide 403.
Further, described crackle 6 is linear. Adopt linear flaws 6 can obtain more uniform splitting ratio.As preferably, crackle 6 length are greater than 8 μ m, and width is 2.0 μ m, and the degree of depth is 4 μ m. Crackle 6 is inclined to one side to differenceThe impact that the state of shaking light signal generating is different, the input light that causes different polarization states is in input stage single mode waveguide 401Resonance phenomena, and interference in intergrade multimode waveguide 402 is all not identical, makes multi-mode interference-type lightSwitch produces different on off states to the input light of different polarization states.
The preparation method of the multi-mode interference-type photoswitch of above-mentioned polarization state control, comprises the following steps:
Step 10) prepare planar lightwave circuit chip, specifically comprise step 101) to step 104):
Step 101): get a silicon chip as silicon substrate 1, utilize wet chemistry method cleaning silicon chip, utilize thermal oxidation methodOn silicon substrate 1, prepare silica cushion 2, utilize plasma enhanced chemical vapor deposition method twoThe germanium dioxide that adulterates in silica obtains ducting layer 3, utilizes ducting layer 3 and 2 thermal expansions of silica cushionDifference between coefficient is introduced crackle by the thermal stress of controlling in course of reaction in silica cushion 26；
Step 102): utilize photoetching and etching technics, prepare waveguide 4 on ducting layer 3, waveguide 4 comprises defeatedEnter grade single mode waveguide 401, intergrade multimode waveguide 402 and n output stage single mode waveguide 403, input stage listThe output of mould waveguide 401 is connected with the input of intergrade multimode waveguide 402, intergrade multimode waveguide 402Output be connected with the input of n output stage single mode waveguide 403;
Step 103): utilize the high annealing heating process cover layer 5 of growing above waveguide 4;
Step 104): section is ground, and makes the planar lightwave circuit chip of oblique 8 °.
Step 20) interface unit: light source 7, Polarization Controller 8 and input optical fibre array 9 are placed in to plane light waveLight path chip the same side, and light source 7 is connected with the light input end of Polarization Controller 8, and the light of Polarization Controller 8 is defeatedGo out end and be connected with the input of input optical fibre array 9, the output of input optical fibre array 9 and planar lightwave circuit coreIn sheet, the input of input stage single mode waveguide 401 connects.
In the photoswitch of said structure waveguide 4 make adopt based on silica on silicon (English full name:Silica-on-Silicon, is called for short in literary composition: SoS) technique, by controlling in silica cushion 2 manufacturing processThermal stress, in silica cushion 2, crack, the crackle of cushion 2 makes multi-mode interference-type photoswitchHave polarization correlated, by regulate polarization state realize optical signal modulation. By input stage single mode waveguide 401 portsThe signal of input certain frequency, through intergrade multimode waveguide 402, exports the multiple signals of certain power. ByHave crackle in cushion 2, the impact that crackle can be different on different polarization states light signal generating, causes difference thenAll phases not of interference in resonance phenomena, the multimode waveguide of the input light of polarization state in input stage single mode waveguideWith, finally make the output state of multi-mode interference coupler (multi-mode interference coupler is called for short in literary composition: MMI) notIdentical. When changing the polarization state of input signal, the phase relation of edge's quadruple picture changes, according to from mirrorPicture principle, the intensity of output picture will change, and form a multi-mode interference-type photoswitch. Input polarization stateThe variation Polarization Controller 8 that can be positioned at input optical fibre array 9 front ends by adjusting realize, and then control outputThe intensity of picture, reaches the adjustable object of on off state.
Embodiment 1
As depicted in figs. 1 and 2, for a kind of 1 × 4 multi-mode interference-type photoswitch of polarization state control, comprise planar lightGlistening light of waves road chip, light source and Polarization Controller. Planar lightwave circuit (PLC) chip comprises silicon substrate 1, is grown inThe silica cushion 2 of silicon substrate 1 top, be grown in the waveguide 4 of silica cushion 2 tops, be grown inThe cover layer 5 of waveguide 4 tops, is provided with crackle 6 in silica cushion 2. Waveguide 4 comprises input stage single mode rippleLead 401, intergrade multimode waveguide 402, the first output stage single mode waveguide 4031, the second output stage single mode waveguides4032, the three output stage single mode waveguides 4033 and the 4th output stage single mode waveguide 4034. Light source and Polarization ControllerLight input end connect, the light output end of Polarization Controller is connected with the input of input stage single mode waveguide 401,The output of input stage single mode waveguide 401 is connected with the input of intergrade multimode waveguide 402, intergrade multimode rippleLead one end of 402 and be connected with input stage single mode waveguide 401, the other end simultaneously and the first output stage single mode waveguide4031, the second output stage single mode waveguide 4032, the three output stage single mode waveguides 4033 and the 4th output stage single mode rippleLead 4034 connections. 1 × 4 multi-mode interference-type photoswitch of this polarization state control is inputted polarization state by adjusting and is realizedOptical signal modulation.
Embodiment 2
Introduce the preparation method of 1 × 4 multi-mode interference-type photoswitch of polarization state control below, with to above-mentioned preparation sideMethod is carried out more detailed explanation.
The preparation method of 1 × 4 multi-mode interference-type photoswitch of the polarization state control shown in Fig. 1, comprises following process:
Step 1): make the silica cushion 2 and the ducting layer 3 that contain crackle 6. Shown in Fig. 2,Comprise step 101), step 102) and step 103).
Step 101) get a silicon chip, utilize wet chemistry method cleaning silicon chip, as silicon substrate 1, removal surfaceDirt; Then,, through the hyperacoustic ultrasonic cleaning of deionized water and dry, completed the cleaning of silicon chip;
Step 102) prepare the silica cushion 2 that contains crackle 6, prepare the titanium dioxide that contains crackle 6The method of silicon buffer layer 2 has multiple, for example chemical vapour deposition technique (CVD), flame hydrolysis (FHD),Sol-gal process (Sol-Gel), thermal oxidation method (TO) etc. Because a thermal oxide of thermal oxidation method can be simultaneouslySilicon chip to over one hundred is oxidized, and has higher efficiency in actual production, and can be simultaneously to silicon substrate1 tow sides simultaneous oxidation, and can control thermal stress. Therefore, utilize thermal oxidation method on silicon substrate 1Prepare the silica cushion 2 that contain crackle 6 of thickness 15 μ m to 20 μ m.
Step 103) making ducting layer 3. Utilize plasma enhanced chemical vapor deposition (plasma enhancingizationLearn vapour deposition, in literary composition, be called for short: PECVD) method, taking silane and oxygen as reacting gas, or with oneNitrous oxide is reacting gas. In the present embodiment, the volume ratio of silane and nitrogen is 1:20,250 DEG C-400 of temperatureDEG C, silane flow rate is 200sccm; Obtain by the germanium dioxide that adulterates the ripple that thickness is 8 μ m in silicaConducting shell 3, in doping process, the volume ratio of germane and argon gas is 1:10, germane and argon gas total flow are 18.5sccm.And ducting layer 3 and silica cushion 2 refringences that contain crackle 6 are 0.4%.
Step 2): etching waveguide shapes: as shown in Figures 3 and 4, on ducting layer 3, utilize photoetching and quarterEtching technique, input stage single mode waveguide 401 in 1 × 4 multi-mode interference-type photoswitch of preparation polarization state control, inIntercaste multimode waveguide 402, the first output stage single mode waveguide 4031, the second output stage single mode waveguides 4032, theThree output stage single mode waveguide 4033, the four output stage single mode waveguides 4034. Prepare waveguide top view as figureShown in 3, waveguide cross-section as shown in Figure 4. This step specifically comprises step 201) and step 202).
Step 201) utilize photoetching process the graph copying of mask plate to ducting layer 3, wherein mask plate figureShape comprises input stage single mode waveguide 401, intergrade multimode waveguide 402, the first output stage single mode waveguides 4031,The second output stage single mode waveguide 4032, the three output stage single mode waveguide 4033, the four output stage single mode waveguides4034. Lithographic process steps is specifically divided into step 2011) to step 2018).
Step 2011) surface treatment: the first step of photoetching is the adhesion strengthening between substrate and photoresist.Therefore wafer surface must be clean and dry, and shows with HMDS (HMDS)Face infiltrates, and can play the effect of adhesion promoter.
Step 2012) spin coating: after surface treatment, wafer will adopt the mode of spin coating to be coated with immediatelyUpper liquid phase photoresist material, wafer is fixed on a vacuum objective table during this time. The thickness of photoresist, allTime, speed and device that the indexs such as even property, particle contaminant, pin hole and spin coating adopt have very large passSystem. Typical rotating speed is between 2000～8000r/min, and approximately 10s, can throw away unnecessary photoresist,Thereby obtain the film of even thickness.
Step 2013) front curing: photoresist is coated onto after wafer surface and must cures and make it film forming, and carriesThe adhesion of high photoresist and substrate, the uniformity of photoresist also can get a promotion in this step, typical beforeBaking conditions be on hot plate 90 DEG C to 100 DEG C dry 30 seconds, then naturally cooling.
Step 2014) aim at and exposure: before exposure, must carry out position to wafer and mask plate patternsPut aligning, to ensure the correct position of design configuration at wafer. Then through overexposure, allow luminous energy activate photoetchingPhotosensitive composition in glue. Because photomask board is to selectively the seeing through of light, therefore the photosensitive composition in photoresist alsoBy selective activation. This step is the essential step of restriction live width.
Step 2015) after cure: after the important function of curing be to make the reaction of photosensitive composition more thorough, andForm stable distribution, its stoving temperature conventionally can be higher than 10 DEG C to 20 DEG C of front stoving temperatures, that is: at hot plateUpper 100 DEG C to 120 DEG C are dried 30 seconds, then naturally cooling.
Step 2016) to develop: development is the committed step that produces figure in wafer surface photoresist. LightThe solubilized region of carving in glue is dissolved by chemical development, and wafer table is stayed in visible island or graph windowFace. The most common developing method is to soak, then with drying after deionized water rinsing. Time and the temperature of soakingTwo very important governing factors. Typical 0.6% the NaOH developer solution that adopts, when development under normal temperatureBetween at 140s-190s.
Step 2017) post bake cures: it is exactly that post bake cures that the heat after development is dried. Cure and require to vapor away to retainPhotoresist solvent, improve the adhesion of photoresist to silicon chip surface. This step is firm photoresist, to belowEtching process very crucial. The temperature that post bake cures conventionally will be higher than 10 DEG C to 20 DEG C of rear baking temperature, and 110DEG C to 140 DEG C dry 30 seconds, then naturally cooling.
Step 2018) check: the quality of utilizing figure above powerful microscopic examination wafer. Once lightCarve glue and form figure in wafer surface, will check to determine the quality of photoetching offset plate figure. The order checkingOne be to find out the defective in quality silicon chip of photoresist, photoresist process performance is described to meet code requirement, twoBe if determine glue defectiveness, they can be removed by removing photoresist, wafer is done over again. If litho pattern is depositedIn defect, be catastrophic for the performance of waveguide, therefore must before etching, check.
Step 202) to utilize etching technics to prepare in 1 × 4 multi-mode interference-type photoswitch of polarization state control defeatedEnter grade single mode waveguide 401,402, the first output stage single mode waveguide 4031, the second outputs of intergrade multimode waveguideLevel single mode waveguide 4032, the three output stage single mode waveguide 4033, the four output stage single mode waveguides 4034. Utilize(reactive ion etching is English to be called for short reactive ion etching: RIE) technique, Cl2For 20sccm, Ar is 40sccm,Radio-frequency power 100W, operating pressure 4.67Pa, the etching amorphous hydrogenated silicon (chemical formula of amorphous hydrogenated siliconFor a-Si:H) or polysilicon (chemical formula of polysilicon is poly-Si) mask; Then in acetone, soak 10minRemove residual photoresist, after oven dry, carry out SiO2The etching of waveguide, etching condition is: radio-frequency power80W-300W; Operating pressure 2.67Pa-26.67Pa; O2With CHF3Flow-rate ratio is 0.05:1; O2With CHF3Total flow 20sccm-300sccm, complete etching and obtain the waveguide 4 of photoswitch, as shown in Figure 4. This enforcementIn example, the sectional dimension of waveguide 4 is 8 μ m × 8 μ m.
Step 3) cover layer preparation: shown in Fig. 5, to step 2) wafer that obtains, through removingThe techniques such as residual mask, deposition boron phosphorus silicon BPSG silica cover layer, annealing make 1 of polarization state control× 4 multi-mode interference-type photoswitch PLC chip parts.
Step 4) section grinding: wafer coupons is ground and is utilized the saw blade of High Rotation Speed along the scribe line on waferCutting crystal wafer, separates the each chip on wafer; Wherein saw blade rotating speed 30000rpm, and supply coolingWater. Utilize UNIPOL-1502 type polisher lapper, the chip obtaining for section carries out grinding and polishing, obtainsEnd face is the photoswitch PLC chip part of oblique 8 °, as shown in Figure 3.
Prove premium properties of the present invention below by test. 1 of polarization state control prepared by said method× 4 multi-mode interference-type photoswitches carry out experimental test, and light field is inputted from input stage single mode waveguide 401, in processIntercaste multimode waveguide 402, from the first output stage single mode waveguide 4031, the second output stage single mode waveguides 4032,The 3rd output stage single mode waveguide 4033, the four output stage single mode waveguides 4034 are exported the light field that some strength distributes.By controlling the thermal stress in silica cushion 2 manufacturing process, introduce crackle at silica cushion 26. The crackle 6 meeting impact different on different polarization states light signal generating, causes the input light of different polarization states to exist thenInterference in multimode waveguide is not identical, finally makes the output state of 1 × 4MMI coupler not identical. Pass throughRegulate polarization state to realize optical signal modulation. Change input polarization state, the phase relation of edge's quadruple picture occursChange, thereby change on off state. The near-infrared light source that adopts 1310nm, the intensity of light source is 0dBm,Input polarisation of light state by change, change the distribution of output facula, realize on off state adjustable, experimentResult as shown in Figures 6 to 9. Encircling Polarization Controller three at mechanical type three encircles angle and is respectively-90 °, 45 ° ,-30 °Polarization state under, optical signal mainly from the first output stage single mode waveguide 4031 output; Three ring angles are respectivelyUnder the polarization state of 10 ° ,-90 ° ,-80 °, mainly output from the second output stage single mode waveguide 4032 of optical signal;Three ring angles are respectively under the polarization state of 45 °, 70 ° ,-45 °, and optical signal is mainly from the 3rd output stage single mode waveguideOutput in 4033; Three ring angles are respectively under the polarization state of 85 °, 50 ° ,-95 °, and optical signal is mainly defeated from the 4thGo out output in grade single mode waveguide 4034. Between each polarization state, regulate and can realize different output states. LogicalCross optimization waveguide fabrication technique, can reduce the insertion loss of photoswitch. By increasing intergrade multimode waveguide402 length increases the length of crackle 6 in light propagation direction, can obtain higher extinction ratio.
As can be seen here, the multi-mode interference-type photoswitch of a kind of polarization state control of the present invention, can realize photoswitch shapeState is adjustable, thermally-stabilised, low nonlinearity, low transmission loss, wide bandwidth of operation, highly integrated and single-mode fiberEfficient coupling. Meanwhile, the present invention also provides the system of 1 × 4 multi-mode interference-type optical switch chip of this polarization state controlPreparation Method, this preparation method is simple, cost is low, can batch making. By cushion, different polarization states light is believedNumber produce different impact, realize different output states. Preparation technology's compatibility is good, and cost is low. Based on SoSFiber waveguide technique is prepared chip, realizes adjustable by connect Polarization Controller before input. The present invention both gramThe problem that has taken existing active PLC type photoswitch complex manufacturing technology, possesses again PLC technique integrated level highFeature, and it is adjustable not need refractive index control module just can realize splitting ratio. The present invention is simple in structure, andThere is multiple operational version, regulate Polarization Controller can realize multiple practical plan, thereby can be widely used inThe waveguide type photoswitch that optic communication, optical information processing and photon/photoelectron are integrated.
Claims (6)
1. the multi-mode interference-type photoswitch of a polarization state control, it is characterized in that, this photoswitch comprises planar lightwave circuit chip, light source (7), Polarization Controller (8) and input optical fibre array (9), planar lightwave circuit chip comprises silicon substrate (1), be grown in the silica cushion (2) of silicon substrate (1) top, be grown in the waveguide (4) of silica cushion (2) top, be grown in the cover layer (5) of waveguide (4) top, in silica cushion (2), be provided with crackle (6), waveguide (4) comprises input stage single mode waveguide (401), intergrade multimode waveguide (402), n output stage single mode waveguide (403), n is more than or equal to 2 even number, light source (7) is connected with the light input end of Polarization Controller (8), the light output end of Polarization Controller (8) is connected with the input of input optical fibre array (9), the output of input optical fibre array (9) is connected with the input of input stage single mode waveguide (401), the output of input stage single mode waveguide (401) is connected with the input of intergrade multimode waveguide (402), and the output of intergrade multimode waveguide (402) is connected with the input of n output stage single mode waveguide (403).
2. according to the multi-mode interference-type photoswitch of polarization state control claimed in claim 1, it is characterized in that, described crackle (6) is linear.
3. according to the multi-mode interference-type photoswitch of polarization state control claimed in claim 2, it is characterized in that, described crackle (6) length is greater than 8 μ m, and width is 2.0 μ m, and the degree of depth is 4 μ m.
4. according to the multi-mode interference-type photoswitch of polarization state control claimed in claim 1, it is characterized in that, described crackle (6) impact different on different polarization states light signal generating, the resonance phenomena of the input light that causes different polarization states in input stage single mode waveguide (401), and interference in intergrade multimode waveguide (402) is all not identical, makes multi-mode interference-type photoswitch produce different on off states to the input light of different polarization states.
5. according to the multi-mode interference-type photoswitch of polarization state control claimed in claim 1, it is characterized in that, described n is 4.
6. a preparation method for the multi-mode interference-type photoswitch of polarization state control claimed in claim 1, is characterized in that, this preparation method comprises the following steps:
Step 10) is prepared planar lightwave circuit chip, specifically comprises step 101) to step 104):
Step 101): get a silicon chip as silicon substrate (1), utilize wet chemistry method cleaning silicon chip, utilize thermal oxidation method on silicon substrate (1), to prepare silica cushion (2), utilize the plasma enhanced chemical vapor deposition method germanium dioxide that adulterates in silica to obtain ducting layer (3), utilize the difference between ducting layer (3) and silica cushion (2) thermal coefficient of expansion, in silica cushion (2), introduce crackle (6) by the thermal stress of controlling in course of reaction;
Step 102): utilize photoetching and etching technics, in ducting layer (3) upper preparation waveguide (4), waveguide (4) comprises input stage single mode waveguide (401), intergrade multimode waveguide (402) and n output stage single mode waveguide (403), the output of input stage single mode waveguide (401) is connected with the input of intergrade multimode waveguide (402), and the output of intergrade multimode waveguide (402) is connected with the input of n output stage single mode waveguide (403);
Step 103): utilize high annealing heating process at waveguide (4) top growth cover layer (5);
Step 104): section is ground, and makes the planar lightwave circuit chip of oblique 8 °;
Step 20) interface unit: light source (7), Polarization Controller (8) and input optical fibre array (9) are placed in to planar lightwave circuit chip the same side, and light source (7) is connected with the light input end of Polarization Controller (8), the light output end of Polarization Controller (8) is connected with the input of input optical fibre array (9), and the output of input optical fibre array (9) is connected with the input of input stage single mode waveguide (401) in planar lightwave circuit chip.
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|---|---|---|---|---|
| CN1323404A (en) * | 1998-10-15 | 2001-11-21 | 国际商业机器公司 | Optical waveguide device |
| CN1395120A (en) * | 2001-07-03 | 2003-02-05 | 古河电气工业株式会社 | Optical Waveguide |
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| KR100900898B1 (en) * | 2007-05-04 | 2009-06-03 | 국방과학연구소 | A integrated optical device and method of fabricating a spatial filter using therein |
| KR101803326B1 (en) * | 2012-03-14 | 2017-12-04 | 한국전자통신연구원 | Optical switch device and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1323404A (en) * | 1998-10-15 | 2001-11-21 | 国际商业机器公司 | Optical waveguide device |
| CN1395120A (en) * | 2001-07-03 | 2003-02-05 | 古河电气工业株式会社 | Optical Waveguide |
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| Title |
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| Design of an insensitive-polarization all-optical switch based on multimode interference structures;Cao Dung Truong et al;《Photonics and Nanostructures – Fundamentals and Applications》;20130516;全文 * |
| 偏振调控全光开关的设计分析;赵华君 et al;《激光杂志》;20111231;第32卷(第3期);全文 * |
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