CN202904057U - Polarization-maintaining optical waveguide - Google Patents
Polarization-maintaining optical waveguide Download PDFInfo
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- CN202904057U CN202904057U CN 201220413333 CN201220413333U CN202904057U CN 202904057 U CN202904057 U CN 202904057U CN 201220413333 CN201220413333 CN 201220413333 CN 201220413333 U CN201220413333 U CN 201220413333U CN 202904057 U CN202904057 U CN 202904057U
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Abstract
The utility model relates to a polarization-maintaining optical waveguide and belongs to the integrated optoelectronic device technical field. A polarization-maintaining plane light wave light path structure comprises a substrate, a buffer layer, a core layer and a covering layer. A first cylinder array whose refractive index is different from the refractive index of the buffer layer is arranged in the buffer layer or a second cylinder array is arranged in the covering layer. The cylinder array is formed by the cylinders which are arranged in parallel. The structure can be a hollow glass capillary, a solid glass capillary, a hollow square column or a solid square column. The plane light wave light path formed by the structure possesses a high birefringence effect, which can effectively solve a correlation problem of transmission light polarization in the plane light wave light path. The polarization-maintaining optical waveguide of the utility model is easy to realize. A technology is mature and is good compatible with a semiconductor technology. A basis is established for realizing a high-performance optical signal processing chip or a device in optical communication, sensing and photon systems.
Description
Technical field
The utility model relates to the integrated opto-electronic device technical field, a kind of guarantor's polarisation waveguide (PMW) structure and preparation technology, this protects the polarisation waveguide based on common plane optical waveguide technique, by obtaining at cushion (or substrate) and overlayer interpolation linear expansion coefficient misfit structure.This monomode optical waveguide polarization state when the transmission light wave remains unchanged, thereby can effectively be reduced in transmitting light wave guide wave polarization relevant interference and the Polarization Dependent Loss that causes thus, dispersion, phase place variation etc., guarantee the performance of photon, integrated photonic device, for high-performance optical signal processing chip or device in realization optical communication, sensing, the photonic system lay the foundation.
Background technology
The planar lightwave circuit device that is used for optical fiber communication, light sensing, photonic system, such as coupling mechanism, optical branching device, optical filter etc., because the characteristic of device architecture and material itself causes birefringence, thereby produce the polarization relevant interference, cause Polarization Dependent Loss, dispersion and phase place to change, have a strong impact on the performance of speed fiber optic communication systems, optical sensor system and photonic system signal transmission.For reducing the polarization relevant interference, keep the polarization state of light wave in waveguide, need to propose and research polarization maintenance planar lightwave circuit.
The planar lightwave circuit of making based on isotropic material is made of single mode ridged planar lightwave circuit, because imperfectization of shape and Refractive Index of Material subtle change, destroy the single mode degenerate condition, thereby produced two independently orthogonal polarization modes, caused birefringence effect.Mode birefringence degree B is defined as:
B＝n
x-n
y
Wherein, n
xAnd n
yIt is the effective refractive index of two orthogonal polarization modes.
When planar lightwave circuit is made, have a mind to introduce larger mode birefringence, so that a certain polarization mode is in off-state, can reach the purpose that polarization keeps.Although adopt birefringent material, sandwich layer and the large refringence of substrate/covering, many cladding structures etc. all can realize polarization maintenance effect, material and technique realize that difficulty is larger.
The utility model proposes a kind of polarization and keep the planar lightwave circuit structure, planar technology based on maturation, in optical waveguide substrates, clad material growth course, the artificial linear expansion coefficient misfit structure that adds, produce high birefringence, so that the single-mode optics wave mode of transmission is in single polarization state therein, thereby the polarization relevant issues of all kinds of photonic devices have been avoided.
The utility model content
The utility model purpose is to provide the waveguide of a kind of guarantor's polarisation, so that the polarization state of the light wave of transmission remains unchanged therein, thereby effectively reduces because polarization Polarization Dependent Loss, dispersion, phase place relevant and that cause thus change.
The utility model adopts following technical scheme:
A kind of guarantor's polarisation described in the utility model waveguide, comprise substrate, be provided with cushion at substrate, be provided with the waveguide core layer structure at cushion, be equipped with the silicon dioxide overlayer in waveguide core layer structure and cushion, be provided with the first cylinder array that refractive index is different from cushion in cushion, described the first cylinder array is made of the cylinder that is arranged in parallel.
The utility model can also adopt following technical measures to come the technical scheme of further Optimal Guaranteed polarisation waveguide:
A) be provided with the second cylinder array above the waveguide core layer structure, described the second cylinder array is made of the cylinder that is arranged in parallel.
B) cylinder is hollow glass kapillary, solid glass kapillary, square hollow post or solid squares post.
Compared with prior art, the utlity model has following advantage:
The utility model purpose is to provide the waveguide of a kind of guarantor's polarisation, so that the polarization state of the light wave of transmission remains unchanged therein, thereby effectively reduces because polarization Polarization Dependent Loss, dispersion, phase place relevant and that cause thus change.Protect the structure of polarisation waveguide based on common Planar Optical Waveguide Structures, by in cushion or overlayer, placing the different cylinder array of refractive index, can realize protecting inclined to one side purpose.As seen its structure is easy to realize, and is relatively simple.Lead than common guarantor's partial wave, general using high birefringence material, such as lithium niobate etc., the utility model utilizes the isotropic semiconductor material, realizes easily the high birefringence effect, protects inclined to one side purpose thereby reach.
A kind of preparation method who protects the polarisation waveguide of the utility model is based on planar optical waveguide technique, the semiconductor material of utilization, and its technique and IC technique have good compatibility, make easily, thereby well reduce cost.
Shape and refractive index by coupled columns volume array 5 are optimized design, can be met guarantor's partial wave and lead required mode birefringence degree Bm arrival 1*10
-4To 6*10
-4Requirement.Thereby can well lower because problems such as the relevant Polarization Dependent Loss that causes of polarization, dispersion, phase place variations.
As seen the utility model is protected the polarisation waveguide, have and be easy to realize, technical maturity and good with the IC processing compatibility, has the high birefringence effect, can making wherein, the polarization state of the light wave of transmission remains unchanged, thereby can guarantee the performance of photonic integrated device, for high-performance optical signal processing chip or device in realization optical communication, sensing, the photonic system are laid a good foundation.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is normal optical waveguide schematic cross-section;
Fig. 2 is the waveguide schematic cross-section that has the linear expansion coefficient misfit structure in a kind of cushion;
Fig. 3 is the waveguide schematic cross-section that cushion and overlayer have the linear expansion coefficient misfit structure;
Fig. 4 protects polarisation waveguide cushion to place linear expansion coefficient misfit structure synoptic diagram;
Fig. 5 is that cushion is made;
Fig. 6 is that the linear expansion coefficient misfit structure is made;
Fig. 7 is that ducting layer is made;
Fig. 8 is photoetching waveguide figure and etching waveguide core layer structure;
Fig. 9 is that overlayer is made;
Figure 10 is the spacing t of linear expansion coefficient misfit structure and waveguide and the graph of relation of mode birefringence degree;
Figure 11 is the graph of relation of linear expansion coefficient misfit structure spacing d and mode birefringence degree.
Figure 12 exists the overlayer of linear expansion coefficient misfit structure to complete in the overlayer;
Figure 13 is the spacing t of linear expansion coefficient misfit structure and waveguide and the graph of relation of mode birefringence degree;
Figure 14 is the graph of relation of linear expansion coefficient misfit structure spacing d and mode birefringence degree.
Among the figure: the 1st, substrate; The 2nd, cushion; The 3rd, the waveguide core layer structure; The 4th, the silicon dioxide overlayer; The 5th, the cylinder array.
Embodiment
For further specifying content of the present utility model and characteristics, the utility model is described in further detail below in conjunction with accompanying drawing, but the utility model not only is limited to embodiment.
Embodiment 1: with reference to shown in Figure 2, has guarantor's polarisation waveguide of linear expansion coefficient misfit structure in a kind of cushion, comprises substrate 1, and cushion 2, sandwich layer 3, the linear expansion coefficient misfit structure 5 in overlayer 4 and the cushion forms.It is characterized in that structural innovation and technical maturity and compatible good.Be mainly reflected in: the first, the structure innovation aspect by adding linear expansion coefficient misfit structure 5 at cushion 2, obtains protecting the polarisation waveguide.Compare with substrate, the large refringence of covering, many cladding structures with adopting birefringent material, sandwich layer, structure of the present utility model is innovative.The second, technical maturity and compatible aspect, planar optical waveguide technique are very ripe at present, and cost is very low, and optical waveguide is compatible mutually with IC technique on manufacture craft, and visible the utility model technical maturity is easy to realize that compatibility is very good.
Shown in Fig. 5-9, the below introduces a kind of preparation method who protects the polarisation waveguide in detail.
Step 1: cushion is made.With reference to shown in Figure 5, at first utilizing the wet chemistry method cleaning silicon chip is silicon substrate 1, removes the dirt on surface.Then, through the hyperacoustic ultrasonic cleaning of deionized water and drying, finished the cleaning of silicon chip.Next prepare silicon dioxide cushion 2, the method for preparing the silicon dioxide buffering has multiple: chemical vapour deposition technique (CVD), flame hydrolysis (FHD), sol-gal process (Sol-Gel), thermal oxidation method (TO) etc.Because a thermal oxide of thermal oxidation method can be simultaneously over one hundred silicon chip is carried out oxidation, has higher efficient in actual production, and can be simultaneously to the tow sides simultaneous oxidation of silicon substrate, thereby can eliminate extra-stress.Therefore, utilize thermal oxidation method at the silicon dioxide cushion of silicon substrate preparation thickness 15um to 20um.
Step 2: the linear expansion coefficient misfit structure is made.With reference to shown in Figure 6, on cushion 2, place linear expansion coefficient misfit structure 5.Wherein linear expansion coefficient misfit structure 5 has the various structures shape: hollow glass kapillary, solid glass kapillary, square hollow post and solid squares post, the variation range of refractive index can be 1 to 3.5.Present embodiment elaborates take the hollow glass kapillary as example.At first, on cushion 2, be coated with uniformly one deck glue, usually adopt ultraviolet glue.Then below high magnification (1000 times-3000 times) microscope, operating in cushion 2 top arrangement pitches by microstructure is 5um, and diameter is the hollow glass kapillary of 1um, such as Fig. 6.Wash at last unnecessary glue, prepare next step technique.
Step 3: ducting layer is made.With reference to shown in Figure 7, at first finish the preparation of cushion, then make ducting layer.Finish after the structure shown in Figure 6, utilize wet-oxygen oxidation thickness to be the silicon dioxide cushion of 1um-5um, thereby finish the preparation of cushion.Next, utilize the PECVD method, with silane (SiH
4) and oxygen, or nitrous oxide (N
2O) being reacting gas, is under 250 ℃-400 ℃, by the germanium dioxide (GeO that mixes in silicon dioxide in temperature
2) obtain the sandwich layer of waveguide, and sandwich layer and cushion refringence are 0.4%.
Step 4: photoetching waveguide figure and etching waveguide core layer structure.With reference to shown in Figure 8, after having finished the doping silicon dioxide ducting layer, need to utilize photoetching and etching technics to prepare the waveguide core layer structure.Utilize photoetching process the graph copying of mask plate to ducting layer, specifically be divided into 8 the step:
Step 4.1 surface treatment: the first step of photoetching is the adhesion that strengthens between substrate and the photoresist.Therefore the print surface must be cleaning and dry, and carries out surface infiltration with HMDS (HMDS), can play the effect of adhesion promoter.
Step 4.2 spin coating: after the surface treatment, print will adopt the mode of spin coating to coat liquid phase photoresist material immediately, during print be fixed on the vacuum objective table.The time that the index such as the thickness of photoresist, homogeneity, particle contaminant, pin hole and spin coating are adopted, speed and device have very large relation.Typical rotating speed is between 2000-8000r/min, and approximately 10s can throw away unnecessary photoresist, thereby obtain the film of even thickness.。
Cure before the step 4.3: photoresist is coated onto must cure behind the print surface and makes it film forming, and the adhesion of raising photoresist and substrate, the homogeneity of photoresist also can get a promotion in this step, typical before baking conditions be 90 ℃ to 100 ℃ bakings 30 seconds on hot plate, then naturally cool off.
Step 4.4 is aimed at and exposure: before exposure, must carry out position alignment to print and photomask board figure, to guarantee that design configuration is at the correct position of print.Then through overexposure, allow luminous energy activate photosensitive composition in the photoresist.Because photomask board sees through the selectivity of light, so the photosensitive composition in the photoresist is also by the activation of selectivity.This step is the essential step of restriction live width.
Cure after the step 4.5: after the vital role of curing be to make the reaction of photosensitive composition more thorough; and form stable distribution; its stoving temperature can be higher than 10 ℃ to 20 ℃ of front stoving temperatures usually, that is: then 100 ℃ to 120 ℃ bakings 30 seconds on hot plate cool off naturally.
Step 4.6 is developed: development is the committed step that produces figure in print photomask surface glue.Solubilized zone in the photoresist is dissolved by chemical development, and the print surface is stayed on visible island or graph window.The most common developing method is to soak, then with drying behind the deionized water rinsing.Time and the temperature of soaking are two very important controlling factors.Typical 0.6% the NaOH developer solution that adopts, development time is at 140s-190s under the normal temperature.
Step 4.7 post bake cures: the heat baking after the development is exactly that post bake cures.Cure and require to vapor away the photoresist solvent that retains, improve photoresist to the adhesion of silicon chip surface.This step is firm photoresist, and is very crucial to following etching process.The temperature that post bake cures will be higher than 10 ℃ to 20 ℃ of rear baking temperature usually, and namely 110 ℃ to 140 ℃ were dried by the fire 30 seconds, then naturally cooling.
Step 4.8 checks: the quality of utilizing figure above the powerful microscopic examination wafer.In case photoresist forms figure on the print surface, will check to determine the quality of photoetching offset plate figure.The purpose one that checks is to find out the defective in quality silicon chip of photoresist, describes the photoresist process performance satisfying code requirement, the 2nd, if determine the glue defectiveness, can remove them by removing photoresist, and print is done over again.If there is defective in litho pattern, be catastrophic for the performance of waveguide, therefore must before etching, check.
Next, utilize etching technics to prepare needed waveguiding structure.At first utilize reactive ion etching RIE technique, Cl
2Be 20sccm, Ar is 40sccm, radio-frequency power 100W, operating pressure 4.67Pa, etching amorphous hydrogenated silicon a-Si:H or polysilicon poly-Si mask; Then in acetone, soak 10min and remove residual photoresist, carry out SiO after the oven dry
2The etching of leading, etching condition is: radio-frequency power 80W-300W; Operating pressure 2.67Pa-26.67Pa; O
2With CHF
3Throughput ratio is 0.05-1; O
2With CHF
3Total flow 20sccm-300sccm.Thereby obtain the waveguide core layer structure.
Step 5: overlayer is made.With reference to shown in Figure 9, the process of the print after the etching is removed residual mask, deposition boron phosphorus silicon BPSG (B
2O
3-P
2O
5-SiO
2Glass) techniques such as silicon dioxide overlayer, annealing make waveguide.
Figure 13 and Figure 14 have provided the Numerical results of leading about protecting partial wave.Figure 13 be linear expansion coefficient misfit structure and waveguide between the relation of distance and mode birefringence degree, wherein horizontal ordinate t is the spacing of linear expansion coefficient misfit structure and waveguide.Figure 14 is the relation of linear expansion coefficient misfit structure spacing and mode birefringence degree, and wherein horizontal ordinate d is the spacing of linear expansion coefficient misfit structure.Can well be realized protecting partially by the visible the utility model of Figure 13 and 14, thereby reach the purpose of protecting the polarisation waveguide.
This shows the utility model, a kind of guarantor's polarisation ripple has the realization of being easy to, technical maturity and compatible good, have the characteristics such as high birefringence effect, can making wherein, the polarization state of the light wave of transmission remains unchanged, thereby can guarantee the performance of photonic integrated device, for high-performance optical signal processing chip or device in realization optical communication, sensing, the photonic system are laid a good foundation.
Embodiment 2: embodiment 1 before overlayer is made, first to the print after the etching through removal residual mask, then deposit BPSG silicon dioxide overlayer, being of uniform thickness of thickness and waveguide, as shown in figure 10.Then, on overlayer, place the linear expansion coefficient misfit structure, as shown in figure 11; And this structure can be hollow glass kapillary, solid glass kapillary, square hollow post or solid squares post.At last, deposition BPSG silicon dioxide overlayer, thickness is 15um, as shown in figure 12.
Embodiment 3:
The waveguide of a kind of guarantor's polarisation, comprise substrate 1, be provided with cushion 2 at substrate 1, be provided with waveguide core layer structure 3 at cushion 2, be equipped with silicon dioxide overlayer 4 in waveguide core layer structure 3 and cushion 2, it is characterized in that be provided with the first cylinder array that refractive index is different from cushion 2 in cushion 2, described the first cylinder array is made of the cylinder 5 that is arranged in parallel.In the present embodiment, be provided with the second cylinder array above the waveguide core layer structure, described the second cylinder array is made of the cylinder 5 that is arranged in parallel; Cylinder 5 is hollow glass kapillary, solid glass kapillary, square hollow post or solid squares post.
A kind of preparation method who protects the polarisation waveguide:
Step 1: get a silicon substrate, at the silicon dioxide cushion of silicon substrate preparation thickness 15um to 20um;
Step 2: be coated with one deck glue at the silicon dioxide cushion, and cylinder 5 is arranged in parallel within on the glue, to form a cylinder array, then, wash unnecessary glue off;
Step 3: utilize the wet-oxygen oxidation method, to the silicon dioxide cushion of 20um, prepare again the silicon dioxide cushion that a layer thickness is 1um-5um at cylinder array and 15um, thereby finish the preparation of cushion 2; Then, utilize plasma enhanced chemical vapor deposition PECVD method, under 250 ℃-400 ℃, doping germanium dioxide (GeO in the silicon dioxide cushion growth silicon dioxide of 1um-5um
2), obtain the waveguide core layer that thickness is 8um, and to make waveguide core layer and cushion refringence be 0.4%;
Step 4: utilize photoetching and etching technics to prepare the waveguide core layer structure;
Step 5: the print after the etching through removing residual mask, deposition boron phosphorus silicon BPSG silicon dioxide overlayer, is finally obtained protecting the polarisation waveguide.
In the present embodiment, carry out step 5 to the print after the etching through after removing residual mask and before carrying out the deposition boron phosphorus silicon BPSG silicon dioxide overlayer of step 5, proceed as follows:
At the thickness of two sides of the waveguide core layer structure silicon dioxide overlayer identical with the waveguide core layer structure; Be coated with one deck glue at the silicon dioxide overlayer again, and cylinder 5 is arranged in parallel within on the glue, to form another cylinder array, then, wash unnecessary glue off.
Claims (3)
1. protect the polarisation waveguide for one kind, comprise substrate (1), be provided with cushion (2) at substrate (1), be provided with waveguide core layer structure (3) at cushion (2), be equipped with silicon dioxide overlayer (4) in waveguide core layer structure (3) and cushion (2), it is characterized in that be provided with the first cylinder array that refractive index is different from cushion (2) in cushion (2), described the first cylinder array is made of the cylinder that is arranged in parallel (5).
2. guarantor's polarisation according to claim 1 waveguide is characterized in that, is provided with the second cylinder array above the waveguide core layer structure, and described the second cylinder array is made of the cylinder that is arranged in parallel (5).
3. guarantor's polarisation according to claim 2 waveguide is characterized in that, cylinder (5) is hollow glass kapillary, solid glass kapillary, square hollow post or solid squares post.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220413333 CN202904057U (en) | 2012-08-20 | 2012-08-20 | Polarization-maintaining optical waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220413333 CN202904057U (en) | 2012-08-20 | 2012-08-20 | Polarization-maintaining optical waveguide |
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| Publication Number | Publication Date |
|---|---|
| CN202904057U true CN202904057U (en) | 2013-04-24 |
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ID=48124710
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220413333 Withdrawn - After Issue CN202904057U (en) | 2012-08-20 | 2012-08-20 | Polarization-maintaining optical waveguide |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102890308A (en) * | 2012-08-20 | 2013-01-23 | 东南大学 | Polarization maintaining planar lightwave circuit and preparation method |
| US9791696B2 (en) | 2015-11-10 | 2017-10-17 | Microsoft Technology Licensing, Llc | Waveguide gratings to improve intensity distributions |
| US9915825B2 (en) | 2015-11-10 | 2018-03-13 | Microsoft Technology Licensing, Llc | Waveguides with embedded components to improve intensity distributions |
| US10359627B2 (en) | 2015-11-10 | 2019-07-23 | Microsoft Technology Licensing, Llc | Waveguide coatings or substrates to improve intensity distributions having adjacent planar optical component separate from an input, output, or intermediate coupler |
-
2012
- 2012-08-20 CN CN 201220413333 patent/CN202904057U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102890308A (en) * | 2012-08-20 | 2013-01-23 | 东南大学 | Polarization maintaining planar lightwave circuit and preparation method |
| CN102890308B (en) * | 2012-08-20 | 2014-02-19 | 东南大学 | Polarization maintaining planar lightwave circuit and preparation method |
| US9791696B2 (en) | 2015-11-10 | 2017-10-17 | Microsoft Technology Licensing, Llc | Waveguide gratings to improve intensity distributions |
| US9915825B2 (en) | 2015-11-10 | 2018-03-13 | Microsoft Technology Licensing, Llc | Waveguides with embedded components to improve intensity distributions |
| US10359627B2 (en) | 2015-11-10 | 2019-07-23 | Microsoft Technology Licensing, Llc | Waveguide coatings or substrates to improve intensity distributions having adjacent planar optical component separate from an input, output, or intermediate coupler |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130424 Effective date of abandoning: 20140219 |
|
| RGAV | Abandon patent right to avoid regrant |