CN105759352A - Heat-insensitive planar optical waveguide and preparation method thereof - Google Patents
Heat-insensitive planar optical waveguide and preparation method thereof Download PDFInfo
- Publication number
- CN105759352A CN105759352A CN201510385994.8A CN201510385994A CN105759352A CN 105759352 A CN105759352 A CN 105759352A CN 201510385994 A CN201510385994 A CN 201510385994A CN 105759352 A CN105759352 A CN 105759352A
- Authority
- CN
- China
- Prior art keywords
- layer
- optical waveguide
- planar optical
- sensitive type
- spin coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a heat-insensitive planar optical waveguide and a preparation method thereof. The planar optical waveguide comprises a substrate layer and a core layer, wherein the core layer is formed on the substrate layer. The planar optical waveguide further comprises an upper cladding wrapping the periphery of the core layer. The material of the upper cladding comprises an UV convergent fluorinated polymeric material. The materials of the substrate layer and the core layer are organic optical materials. The heat-insensitive planar optical waveguide provided by the invention has the advantages of small optical transmission loss and high capability in resisting electromagnetic waves and the like.
Description
Technical field
The present invention relates to fiber waveguide device field, relate in particular to a kind of hot non-sensitive type planar optical waveguide and preparation method thereof.
Background technology
Fiber waveguide is the medium apparatus guiding light wave to propagate wherein, also known as dielectric optical waveguide.Fiber waveguide has two big classes: a class is integrated light guide, and including plane (thin film) dielectric optical waveguide and slab dielectric optical waveguide, they are generally all the parts in integrated optoelectronic device (or system), so being called integrated light guide；Another kind of is cylindrical light waveguide, is commonly referred to optical fiber.
Light transmission in fiber waveguide is bigger by the impact of the extraneous factors such as temperature, thus the stability utilizing the integrated optoelectronic device (or system) made by fiber waveguide can be affected, so existing integrated optoelectronic device (or system) generally all installs temperature-adjusting device to stablize the temperature under its use state, it is prevented that its performance becomes bad with the change of temperature.But, general temperature-adjusting device (such as actively heats or cooling device) all costly, the energy of consumption is relatively big, volume is big.
Although the problem brought for overcoming above-mentioned employing temperature-adjusting device in prior art, propose some solutions, such as, if there being some to utilize the ratio inverse equal to the ratio of the Light Energy being distributed in this two optical transport layer of the thermo-optical coeffecient of satisfied two optical transport layers, then include effective refractive index this principle temperature-independent of the fiber waveguide of this two optical transport layer, the temperature-resistant planar optical waveguide produced, traditional way is that planar optical waveguide includes planar substrates layer, thermo-optical coeffecient is positive sandwich layer, the second surrounding layer that thermo-optical coeffecient is the first surrounding layer of positive inorganic optical material and thermo-optical coeffecient is negative organic optical materials, this sandwich layer is positioned on planar substrates layer, sandwich layer first covers the first surrounding layer that lid layer is very thin, again at first surrounding layer overlying lid layer the second surrounding layer.Utilizing the first surrounding layer that this is very thin, making the evanescent field energy being distributed in the second surrounding layer increase, to reduce the requirement to the second surrounding layer thermo-optical coeffecient, thus realizing the temperature-resistant function of planar optical waveguide.But, just because of needing to increase the evanescent field energy being distributed in the second surrounding layer, cause that the Light Energy being distributed in the core correspondingly reduces, optical transmission loss just increases, so the existing this general optical transmission loss of temperature-resistant planar optical waveguide is all bigger, and it is easily subject to the interference of external electromagnetic ripple etc., so that this planar optical waveguide is created the prejudice that optical transmission loss greatly, is easily disturbed etc. by people, and industrially do not use.
Summary of the invention
For this, the technical problem to be solved is in that to overcome the problem that the optical transmission loss of temperature-resistant planar optical waveguide in prior art greatly, is easily disturbed etc., it is proposed to hot non-sensitive type planar optical waveguide that the interference performances such as a kind of optical transmission loss is little, anti-electromagnetic wave are strong and preparation method thereof.
The hot non-sensitive type planar optical waveguide of one of the present invention, including:
Basal layer and sandwich layer, described sandwich layer is formed on described basal layer；
Also include the top covering being coated on described sandwich layer surrounding；
Top covering material includes ultraviolet polymerization formula fluorinated polymeric material, and base layer material and core material are all inorganic optical material.
Preferably, the sign symbol of the thermo-optical coeffecient of described base layer material and core material is contrary with the sign symbol of the thermo-optical coeffecient of described top covering material.
Preferably, the refractive index of described top covering material is more than the refractive index of described base layer material.
Preferably, described ultraviolet polymerization formula fluorinated polymeric material includes fluorinated acrylic ester.
Preferably, described base layer material includes silicon dioxide, and described core material includes the silicon dioxide of germanium ion doping.
Preferably, the cross section structure of described planar optical waveguide is to bury bar shaped single mode waveguide structure.
A kind of method preparing described hot non-sensitive type planar optical waveguide of the present invention, comprises the following steps:
One layer of inorganic optical material of growth, carries out ion doping on the base layer, anneal hardening；
Repeat the above steps repeatedly, has certain thickness inorganic optical material layer until growing；
Inorganic optical material layer sputters one layer of aluminum protective layer；
Spin coating photoresist on aluminum protective layer, carries out photoetching and development, after obtaining desirable pattern, to adopt aluminum caustic to remove unnecessary aluminum protective layer；
Adopt reactive ion etching method that inorganic optical material layer is performed etching, remove remaining photoresist and aluminum protective layer afterwards, form core structure；
At sandwich layer surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material, form top covering structure.
Preferably, described on aluminum protective layer spin coating photoresist specifically include following steps:
With the rotating speed of 2500-3500 rpm spin coating photoresist on aluminum protective layer, post bake 10-20 minute at 60-70 DEG C of temperature afterwards, then carry out Temperature fall.
Preferably, described following steps are specifically included at sandwich layer surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material:
With the rotating speed of 1500-2500 rpm in sandwich layer surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material, post bake 110-130 minute at 125-175 DEG C of temperature afterwards, then carry out Temperature fall.
Preferably, further comprising the steps of:
Being configured to correspondingly multiple lapping liquid by the grounds travel that diameter is different respectively, successively planar optical waveguide end face is ground according to the order that the diameter of grounds travel used by it is descending with described multiple lapping liquid respectively, milling time is 25-35 minute；
Adopting alkalescence polishing liquid that the planar optical waveguide after grinding is carried out end face polishing, polishing time is 4-6 hour.
The technique scheme of the present invention has the advantage that compared to existing technology
By adopting ultraviolet polymerization formula fluorinated polymeric material as top covering material in the present invention, owing to this kind of material has high chemistry, physical stability, good optical characteristics and the thermo-optical coeffecient of superelevation, in planar optical waveguide, the Light Energy overwhelming majority of transmission is distributed in basal layer and sandwich layer, only sub-fraction evanescent field Energy distribution is in top covering, inorganic optical material is covered so increasing on sandwich layer without auxiliary, only need to cover this top covering material on sandwich layer and just can meet the ratio condition reciprocal equal to the ratio of the Light Energy being distributed in this two optical transport layer of the thermo-optical coeffecient of two optical transport layers, effective refractive index to realize planar optical waveguide does not vary with temperature and changes namely that heat is insensitive, thus reducing optical transmission loss, improve the ability of the interference such as anti-electromagnetic wave.The present invention has compared to all-polymer planar optical waveguide that performance is good, high reliability, can ensure that its loss, performance, reliability can reach the level that full silicon planar lightwave is led simultaneously, and the present invention also leads than full silicon planar lightwave and has that the manufacturing cycle is short, technique is simple, low cost and other advantages.
The present invention is by arranging the refractive index refractive index more than base layer material of top covering material, under the requirement meeting planar optical waveguide optical transmission loss and capacity of resisting disturbance etc., the requirement of the excessive heat backscatter extinction logarithmic ratio to top covering material evanescent field energy can be made to be distributed in top covering more, thus can be reduced.
By arranging base layer material and core material is silicon dioxide in the present invention, owing to current silicon dioxide is the planar optical waveguide material of main flow, so being conducive to realizing slitless connection with main flow planar optical waveguide, additionally need not increase Innovation Input and reducing R&D costs.
By repeatedly anneal hardening step in the present invention, it is possible to eliminate lattice defect and internal stress, make the silicon dioxide layer of growth become dense uniform, and make the foreign atom of implantation be diffused into alternative site, it is ensured that the uniformity of doping.Form certain thickness germanium ion doped silicon dioxide layer by growing several times and adulterating, further ensure the uniformity of doping and the compactness of silicon dioxide layer.
In the present invention by arrange with the rotating speed of 2500-3500 rpm on aluminum protective layer spin coating photoresist and at 60-70 DEG C of temperature post bake 10-20 minute Temperature fall; improve uniformity and the flatness of photoresist film forming, be conducive to follow-up photoetching and development form the pattern that perpendicularity is good.
In the present invention by arrange with the rotating speed of 1500-2500 rpm sandwich layer surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material and at 125-175 DEG C of temperature post bake 110-130 minute Temperature fall, improve uniformity and the flatness of polymeric material film forming, improve the quality of prepared planar optical waveguide.
By being configured to correspondingly multiple lapping liquid by the grounds travel that diameter is different respectively in the present invention, respectively with described multiple lapping liquid and successively planar optical waveguide end face be ground according to the order that the diameter of grounds travel used by it is descending and all grind the step of 25-35 minute, implement grinding steps step by step by different level, improve the effect of grinding, and by arranging end face polishing step, improve end face flatness and the precision thereof of planar optical waveguide, ensure that its effectiveness being connected with other fiber waveguides, thus further reducing optical transmission loss.
Accompanying drawing explanation
In order to make present disclosure be more likely to be clearly understood, below according to specific embodiments of the invention and in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the hot non-sensitive type planar optical waveguide of one of an embodiment of the present invention；
Fig. 2 is the flow chart of a kind of method preparing hot non-sensitive type planar optical waveguide of another kind embodiment of the present invention；
Fig. 3 is the growth course figure preparing hot non-sensitive type planar optical waveguide in Fig. 2；
Fig. 4 is the flow chart of a kind of method preparing hot non-sensitive type planar optical waveguide of another embodiment of the present invention.
In figure, accompanying drawing labelling is expressed as: 1-basal layer, 2-sandwich layer, 3-top covering.
Detailed description of the invention
With reference to Fig. 1, it is the hot non-sensitive type planar optical waveguide of one of a kind of embodiment, including: basal layer 1 and sandwich layer 2, described sandwich layer 2 is formed on described basal layer 1.
Above-mentioned hot non-sensitive type planar optical waveguide also includes the top covering 3 being coated on described sandwich layer surrounding, and the thickness of sandwich layer is H1, and width is W1, and the thickness of top covering is H2.Top covering material includes ultraviolet polymerization formula fluorinated polymeric material, this kind of material has high chemistry, physical stability and good optical characteristics, and its refractive index and thermo-optical coeffecient arbitrarily can adjust within the specific limits according to specific requirement, only spin coating method need to being utilized to be spin-coated on chip equably, technique is very simple and less costly.Preferably, described ultraviolet polymerization formula fluorinated polymeric material includes fluorinated acrylic ester.
Base layer material and core material are all inorganic optical material, the sign symbol of the thermo-optical coeffecient of base layer material and core material is contrary (such as with the sign symbol of the thermo-optical coeffecient of described top covering material, the thermo-optical coeffecient of top covering material is negative, then the thermo-optical coeffecient of base layer material and core material is just).
Above-mentioned hot non-sensitive type planar optical waveguide operation principle is: when the thermo-optical coeffecient of the inorganic optical material as basal layer and sandwich layer is timing, thermo-optical coeffecient including the top covering of ultraviolet polymerization formula fluorinated polymeric material is negative, and the ratio thermo-optical coeffecient of basal layer and the inorganic optical material of a sandwich layer numerically high order of magnitude, and the Light Energy overwhelming majority is distributed in the middle of the inorganic optical material of waveguide-based bottom and sandwich layer in waveguide, only sub-fraction evanescent field Energy distribution is in the middle of waveguide top covering, if the ratio of the inorganic optical material and the thermo-optical coeffecient of the top covering material including ultraviolet polymerization formula fluorinated polymeric material that meet basal layer and sandwich layer is equal to the inverse of the ratio being distributed in both central Light Energies, fiber waveguide effective refractive index can be realized do not vary with temperature and change.
By adopting ultraviolet polymerization formula fluorinated polymeric material as one of top covering material in the present embodiment, owing to this kind of material has high chemistry, physical stability, good optical characteristics and the thermo-optical coeffecient of superelevation, in planar optical waveguide, the Light Energy overwhelming majority of transmission is distributed in basal layer and sandwich layer, only sub-fraction evanescent field Energy distribution is in top covering, inorganic optical material is covered so increasing on sandwich layer without auxiliary, only need to cover this top covering material on sandwich layer and just can meet the ratio condition reciprocal equal to the ratio of the Light Energy being distributed in this two optical transport layer of the thermo-optical coeffecient of two optical transport layers, effective refractive index to realize planar optical waveguide does not vary with temperature and changes namely that heat is insensitive, thus reducing optical transmission loss, improve the ability of the interference such as anti-electromagnetic wave.The present embodiment has compared to all-polymer planar optical waveguide that performance is good, high reliability, can ensure that its loss, performance, reliability can reach the level that full silicon planar lightwave is led simultaneously, and the present embodiment is also led than full silicon planar lightwave and had that the manufacturing cycle is short, technique is simple, low cost and other advantages.
As a kind of preferred implementation, the refractive index of described top covering material is more than the refractive index of described base layer material.
By arranging the refractive index refractive index more than base layer material of top covering material in the present embodiment, under the requirement meeting planar optical waveguide optical transmission loss and capacity of resisting disturbance etc., the requirement of the excessive heat backscatter extinction logarithmic ratio to top covering material evanescent field energy can be made to be distributed in top covering more, thus can be reduced.
As a kind of preferred implementation, described base layer material includes silicon dioxide, and described core material includes germanium ion doping silicon dioxide.
By arranging base layer material and core material is silicon dioxide in the present embodiment, owing to current silicon dioxide is the planar optical waveguide material of main flow, so being conducive to realizing slitless connection with main flow planar optical waveguide, additionally need not increase Innovation Input and reducing R&D costs.
As a kind of preferred implementation, the cross section structure of described planar optical waveguide is to bury bar shaped single mode waveguide structure.Choose H1=W1=6um, H2=10um, the refractive index of top covering is 1.45, the refractive index of sandwich layer is 1.46, the refractive index of basal layer is 1.44, adopts OptiwaveBPM software design fiber waveguide cross section structure, obtains good optical field distribution figure through digital simulation, and waveguide meets single mode transport condition, effective index of fundamental mode is 1.4547.
With reference to Fig. 2, it it is the flow chart of a kind of method preparing above-mentioned hot non-sensitive type planar optical waveguide of another kind of embodiment, the concrete steps of hot non-sensitive type planar optical waveguide are prepared corresponding to this, the generation process of this hot non-sensitive type planar optical waveguide is as it is shown on figure 3, this preparation method specifically includes following steps:
Step S1: grow one layer of inorganic optical material 2-1 on basal layer 1, carry out ion doping, anneal hardening；Preferably, the described method using plasma growing one layer of inorganic optical material 2-1 on basal layer 1 strengthens chemical vapour deposition technique.Described basal layer adopts silicon dioxide.Described ion adopts germanium ion.
Step S2: repeating step S1 many times, until growing, there is certain thickness inorganic optical material layer 2-2；Preferably, the thickness of the inorganic optical material layer 2-1 grown each time is 2um, and the thickness obtaining inorganic optical material layer after many secondary growths is 6um.
Step S3: sputter one layer of aluminum protective layer 4 on inorganic optical material layer 2-2；Preferably, the thickness of described aluminum protective layer 4 is 100nm.
Step S4: spin coating photoresist 5 on aluminum protective layer 4, carries out photoetching and development, after obtaining desirable pattern, to adopt aluminum caustic to remove unnecessary aluminum protective layer 4；It will be understood by those of skill in the art that described photoresist selects positive glue or negative glue can meet application demand, for instance BP212 positive photo glue can be selected.Photoetching method can adopt ultraviolet photolithographic, is placed in the NaOH solution that concentration is 5 ‰ by device and develops, improve the edge-perpendicular degree of obtained pattern after exposure 5s.
Step S5: adopt reactive ion etching method that inorganic optical material layer is performed etching, remove remaining photoresist 5 and aluminum protective layer 4 afterwards, form sandwich layer 2 structure；
Step S6: at sandwich layer surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material, forms top covering 3 structure.Preferably, the thickness of described top covering 3 is 10um, and the cross section structure of this hot non-sensitive type planar optical waveguide obtained is to bury bar shaped single mode waveguide structure.
By repeatedly anneal hardening step in the present embodiment, it is possible to eliminate lattice defect and internal stress, make the silicon dioxide layer of growth become dense uniform, and make the foreign atom of implantation be diffused into alternative site, it is ensured that the uniformity of doping.Form certain thickness germanium ion doped silicon dioxide layer by growing several times and adulterating, further ensure the uniformity of doping and the compactness of silicon dioxide layer.
As a kind of preferred implementation, above-mentioned on aluminum protective layer 4 spin coating photoresist 5 specifically include following steps:
With the rotating speed of 2500-3500 rpm spin coating photoresist 5 on aluminum protective layer 4, post bake 10-20 minute at 60-70 DEG C of temperature afterwards, then carry out Temperature fall.Preferably, rotating speed is 3000 rpms, and rotational time is 20s, and post bake 15 minutes at 65 DEG C improve uniformity and the flatness of film forming.
In the present embodiment by arrange with the rotating speed of 2500-3500 rpm on aluminum protective layer spin coating photoresist and at 60-70 DEG C of temperature post bake 10-20 minute Temperature fall; improve uniformity and the flatness of photoresist film forming, be conducive to follow-up photoetching and development form the pattern that perpendicularity is good.
As a kind of preferred implementation, above-mentioned specifically include following steps at sandwich layer 2 surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material:
With the rotating speed of 1500-2500 rpm in sandwich layer surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material, post bake 110-130 minute at 125-175 DEG C of temperature afterwards, then carry out Temperature fall.Preferably, rotating speed is 2000 rpms, and rotational time is 20s, and post bake 120 minutes at 150 DEG C improve uniformity and the flatness of film forming.
In the present embodiment by arrange with the rotating speed of 1500-2500 rpm sandwich layer surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material and at 125-175 DEG C of temperature post bake 110-130 minute Temperature fall, improve uniformity and the flatness of polymeric material film forming, improve the quality of prepared planar optical waveguide.
As a kind of preferred implementation, described anneal hardening specifically include following steps:
It is warming up to 120 DEG C with the heating rate of 10-20 DEG C/min, is incubated 20-30min, is warming up to 140 DEG C with the heating rate of 10-20 DEG C/min afterwards, insulation 20-30min, it is warming up to 160 DEG C with the heating rate of 10-20 DEG C/min more afterwards, is incubated 20-30min, cools to room temperature afterwards with the furnace.Anneal hardening mode by the way, it is possible to eliminate lattice defect and internal stress better, make the silicon dioxide layer of growth become dense uniform, the property hard-caked sediment, docile and obedient etc. of material is had better effect.
As a kind of preferred implementation, as shown in Figure 4, the method for the present embodiment is further comprising the steps of:
Step S7: be configured to correspondingly multiple lapping liquid by the grounds travel that diameter is different respectively, is ground planar optical waveguide end face according to the order that the diameter of grounds travel used by it is descending successively with described multiple lapping liquid respectively, and milling time is 25-35 minute.Preferably, selecting the grounds travel of 25um, 14um, 7um, 3.5um diameter to be configured to lapping liquid respectively, the grounds travel adopting these four kinds of diameters can while improving grinding efficiency, it is thus achieved that grinding effect better.
Step S8: adopt alkalescence polishing liquid that the planar optical waveguide after grinding is carried out end face polishing, polishing time is 4-6 hour.
By being configured to correspondingly multiple lapping liquid by the grounds travel that diameter is different respectively in the present embodiment, respectively with described multiple lapping liquid and successively planar optical waveguide end face be ground according to the order that the diameter of grounds travel used by it is descending and all grind the step of 25-35 minute, implement grinding steps step by step by different level, improve the effect of grinding, and by arranging end face polishing step, improve end face flatness and the precision thereof of planar optical waveguide, ensure that its effectiveness being connected with other fiber waveguides, thus further reducing optical transmission loss.
Obviously, above-described embodiment is only for clearly demonstrating example, and is not the restriction to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also cannot all of embodiment be given exhaustive.And the apparent change thus extended out or variation are still among the protection domain of the invention.
Claims (10)
1. a hot non-sensitive type planar optical waveguide, including:
Basal layer and sandwich layer, described sandwich layer is formed on described basal layer；
It is characterized in that,
Also include the top covering being coated on described sandwich layer surrounding；
Top covering material includes ultraviolet polymerization formula fluorinated polymeric material, and base layer material and core material are all inorganic optical material.
2. hot non-sensitive type planar optical waveguide according to claim 1, it is characterised in that the sign symbol of the thermo-optical coeffecient of described base layer material and core material is contrary with the sign symbol of the thermo-optical coeffecient of described top covering material.
3. hot non-sensitive type planar optical waveguide according to claim 1, it is characterised in that the refractive index of described top covering material is more than the refractive index of described base layer material.
4. hot non-sensitive type planar optical waveguide according to claim 1, it is characterised in that described ultraviolet polymerization formula fluorinated polymeric material includes fluorinated acrylic ester.
5. hot non-sensitive type planar optical waveguide according to claim 1, it is characterised in that described base layer material includes silicon dioxide, described core material includes the silicon dioxide of germanium ion doping.
6. according to the arbitrary described hot non-sensitive type planar optical waveguide of claim 1-5, it is characterised in that the cross section structure of described planar optical waveguide is to bury bar shaped single mode waveguide structure.
7. the method for the hot non-sensitive type planar optical waveguide prepared described in claim 1, it is characterised in that comprise the following steps:
One layer of inorganic optical material of growth, carries out ion doping on the base layer, anneal hardening；
Repeat the above steps repeatedly, has certain thickness inorganic optical material layer until growing；
Inorganic optical material layer sputters one layer of aluminum protective layer；
Spin coating photoresist on aluminum protective layer, carries out photoetching and development, after obtaining desirable pattern, to adopt aluminum caustic to remove unnecessary aluminum protective layer；
Adopt reactive ion etching method that inorganic optical material layer is performed etching, remove remaining photoresist and aluminum protective layer afterwards, form core structure；
At sandwich layer surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material, form top covering structure.
8. method according to claim 7, it is characterised in that described on aluminum protective layer spin coating photoresist specifically include following steps:
With the rotating speed of 2500-3500 rpm spin coating photoresist on aluminum protective layer, post bake 10-20 minute at 60-70 DEG C of temperature afterwards, then carry out Temperature fall.
9. method according to claim 7, it is characterised in that described specifically include following steps at sandwich layer surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material:
With the rotating speed of 1500-2500 rpm in sandwich layer surrounding spin coating ultraviolet polymerization formula fluorinated polymeric material, post bake 110-130 minute at 125-175 DEG C of temperature afterwards, then carry out Temperature fall.
10. according to the arbitrary described method of claim 7-9, it is characterised in that further comprising the steps of:
Being configured to correspondingly multiple lapping liquid by the grounds travel that diameter is different respectively, successively planar optical waveguide end face is ground according to the order that the diameter of grounds travel used by it is descending with described multiple lapping liquid respectively, milling time is 25-35 minute；
Adopting alkalescence polishing liquid that the planar optical waveguide after grinding is carried out end face polishing, polishing time is 4-6 hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510385994.8A CN105759352B (en) | 2015-07-03 | 2015-07-03 | Hot non-sensitive type planar optical waveguide and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510385994.8A CN105759352B (en) | 2015-07-03 | 2015-07-03 | Hot non-sensitive type planar optical waveguide and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105759352A true CN105759352A (en) | 2016-07-13 |
| CN105759352B CN105759352B (en) | 2019-09-24 |
Family
ID=56341889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510385994.8A Active CN105759352B (en) | 2015-07-03 | 2015-07-03 | Hot non-sensitive type planar optical waveguide and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105759352B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646345A (en) * | 2018-05-16 | 2018-10-12 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet planar optical waveguide production method |
| CN111045143A (en) * | 2019-12-30 | 2020-04-21 | 腾讯科技（深圳）有限公司 | Optical waveguide and method for producing the same |
| WO2021129238A1 (en) * | 2019-12-25 | 2021-07-01 | 苏州易锐光电科技有限公司 | Thin film optical waveguide and manufacturing method therefor |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1357010A (en) * | 1999-06-21 | 2002-07-03 | 康宁股份有限公司 | Optical devices made from radiation curable fluorinated compsns. |
| CN1527076A (en) * | 2003-09-22 | 2004-09-08 | 吉林大学 | Array waveguide grating of organic polymer and its making process |
| CN101859001A (en) * | 2010-06-08 | 2010-10-13 | 浙江大学 | Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof |
| JP4760128B2 (en) * | 2005-05-20 | 2011-08-31 | 住友ベークライト株式会社 | Optical waveguide structure and optical waveguide substrate |
| CN102289036A (en) * | 2011-08-22 | 2011-12-21 | 博创科技股份有限公司 | Method for preparing plane optical waveguide chip |
| CN102565942A (en) * | 2012-01-09 | 2012-07-11 | 吉林大学 | Method for manufacturing organic polymer optical waveguide amplifier by ultraviolet nanoimprint lithography |
| CN102902011A (en) * | 2012-09-29 | 2013-01-30 | 河南仕佳光子科技有限公司 | Array waveguide grating with insensitive temperature |
| CN104635298A (en) * | 2015-02-11 | 2015-05-20 | 深圳太辰光通信股份有限公司 | Planar optical waveguide and manufacturing method thereof |
| CN204758862U (en) * | 2015-07-03 | 2015-11-11 | 苏州峰通光电有限公司 | Insensitive type planar optical waveguide of heat |
-
2015
- 2015-07-03 CN CN201510385994.8A patent/CN105759352B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1357010A (en) * | 1999-06-21 | 2002-07-03 | 康宁股份有限公司 | Optical devices made from radiation curable fluorinated compsns. |
| CN1527076A (en) * | 2003-09-22 | 2004-09-08 | 吉林大学 | Array waveguide grating of organic polymer and its making process |
| JP4760128B2 (en) * | 2005-05-20 | 2011-08-31 | 住友ベークライト株式会社 | Optical waveguide structure and optical waveguide substrate |
| CN101859001A (en) * | 2010-06-08 | 2010-10-13 | 浙江大学 | Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof |
| CN102289036A (en) * | 2011-08-22 | 2011-12-21 | 博创科技股份有限公司 | Method for preparing plane optical waveguide chip |
| CN102565942A (en) * | 2012-01-09 | 2012-07-11 | 吉林大学 | Method for manufacturing organic polymer optical waveguide amplifier by ultraviolet nanoimprint lithography |
| CN102902011A (en) * | 2012-09-29 | 2013-01-30 | 河南仕佳光子科技有限公司 | Array waveguide grating with insensitive temperature |
| CN104635298A (en) * | 2015-02-11 | 2015-05-20 | 深圳太辰光通信股份有限公司 | Planar optical waveguide and manufacturing method thereof |
| CN204758862U (en) * | 2015-07-03 | 2015-11-11 | 苏州峰通光电有限公司 | Insensitive type planar optical waveguide of heat |
Non-Patent Citations (1)
| Title |
|---|
| 梁磊 等: ""聚合物/ SiO2混合波导2×2热光开关的制备与测试"", 《光电子激光》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646345A (en) * | 2018-05-16 | 2018-10-12 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet planar optical waveguide production method |
| CN108646345B (en) * | 2018-05-16 | 2020-04-14 | 德州尧鼎光电科技有限公司 | Method for manufacturing deep ultraviolet planar optical waveguide |
| WO2021129238A1 (en) * | 2019-12-25 | 2021-07-01 | 苏州易锐光电科技有限公司 | Thin film optical waveguide and manufacturing method therefor |
| CN111045143A (en) * | 2019-12-30 | 2020-04-21 | 腾讯科技（深圳）有限公司 | Optical waveguide and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105759352B (en) | 2019-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7221826B2 (en) | Spot-size transformer, method of producing spot-size transformer and waveguide-embedded optical circuit using spot-size transformer | |
| Mao et al. | Low propagation loss SiN optical waveguide prepared by optimal low-hydrogen module | |
| CN109491108B (en) | Loaded strip waveguide thermo-optic switch based on graphene heating electrode and preparation method thereof | |
| CN105759463A (en) | Waveguide thermo-optic switch and manufacturing method thereof | |
| US6553170B2 (en) | Method and system for a combination of high boron and low boron BPSG top clad fabrication process for a planar lightwave circuit | |
| US9354395B2 (en) | Optical waveguide element and method of producing the same | |
| CN105759352A (en) | Heat-insensitive planar optical waveguide and preparation method thereof | |
| CN114089474B (en) | Organic-inorganic hybrid integrated variable optical attenuator and preparation method thereof | |
| CN109975926A (en) | A kind of silica load strip waveguide and preparation method thereof | |
| CN104003614A (en) | OAM transmission fiber and manufacturing method thereof | |
| EP0484011B1 (en) | Packaging of silicon optical components | |
| CN204758862U (en) | Insensitive type planar optical waveguide of heat | |
| Butt et al. | Numerical scrutiny of a silica-titania-based reverse rib waveguide with vertical and rounded sidewalls | |
| CN204758962U (en) | Hot photoswitch of waveguide | |
| CN114355507B (en) | Micro-ring resonator based on inverted ridge type silicon dioxide/polymer mixed waveguide and preparation method thereof | |
| CN114578478B (en) | Wavelength division multiplexing system with power equalization function and preparation method thereof | |
| CN113281843B (en) | Four-mode cyclic converter based on polymer | |
| CN204903800U (en) | Organic inorganic integrated heat light modulation type grating that mixes | |
| Li et al. | Low-propagation-loss Ta2O5 optical waveguides on silica substrate | |
| Yuan et al. | Improved performance of a wavelength-tunable arrayed waveguide grating in silicon on insulator | |
| CN206209150U (en) | Stress channel optimization, stress apply enhanced thin footpath panda protecting polarized light fiber | |
| JP2015219295A (en) | Polarization rotation element | |
| Yuan et al. | 16-channel dual-tuning wavelength division multiplexer/demultiplexer | |
| CN111123616A (en) | Sulfide-silicon nitride based hybrid waveguide and preparation method thereof | |
| US6404968B1 (en) | Optical waveguide elements and a process for producing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |