CN104635298A - Planar optical waveguide and manufacturing method thereof - Google Patents

Planar optical waveguide and manufacturing method thereof Download PDF

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Publication number
CN104635298A
CN104635298A CN201510073921.5A CN201510073921A CN104635298A CN 104635298 A CN104635298 A CN 104635298A CN 201510073921 A CN201510073921 A CN 201510073921A CN 104635298 A CN104635298 A CN 104635298A
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layer
separation layer
optical waveguide
planar optical
silicon dioxide
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CN104635298B (en
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林升德
吴金东
胡海鑫
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GUANGDONG AUSPCHIP TECHNOLOGIES CO.,LTD.
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SHENZHEN TAICHENGUANG COMMUNICATION CO Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention discloses a planar optical waveguide and a manufacturing method thereof. The planar optical waveguide comprises a lower cladding, a waveguide core layer, an isolation layer and an upper cladding; the refractive index of the upper cladding is equal to that of the lower cladding and is higher than that of the isolation layer; the isolation layer is formed on the lower cladding; the waveguide core layer is packaged completely in the isolation layer; the upper cladding is formed on the isolation layer. The refractive index distribution of the planar optical waveguide is optimized, the loss of a device is reduced, and the 1250-1650 full band width performance can be realized more easily.

Description

A kind of planar optical waveguide and preparation method thereof
Technical field
The present invention relates to semiconductor applications, particularly relate to a kind of planar optical waveguide and preparation method thereof.
Background technology
At optical technical field; all kinds of optical elements of single form move towards the road of integrated optics at present; optical module is incorporated on wafer (wafer); form the basic parts of integrated optical circuit; contribute to that optical communication module is integrated, reduced volume, minimizing encapsulation number of times; there is large-scale production, and the advantage such as low cost, high-performance, high-density device integration, be the necessary component of optical fiber telecommunications system.
So-called planar optical waveguide (Planar Lightwave Circuit is called for short PLC), refers to that optical waveguide is positioned at a plane.As the concept of IC chip, planar optical waveguide adopts semiconductor technology to be integrated on chip piece by optical element, realize the optical device technology to the complicated control treatment function of light signal, the PLC device widely applied has optical branching device (Splitter), array waveguide grating (AWG), photoswitch (Switch), adjustable optical attenuator (VOA), optical waveguide mode spectrum (OWLS) sensor.At present, it is the important development direction of PLC technology that passive device and active, MEMS merge, novel multifunctional unit device can be developed, as VMUX (VOA+AWG), WSS (Switch+AWG), accelerometer, pressure transducer, mini microphone (smart mobile phone) etc.PLC not only can realize that photoelectric device is integrated, scale, miniaturization, and there is stable performance, be suitable for large-scale production, the advantage such as cost is low.
The material that can make PLC has silicon dioxide (SiO 2), lithium niobate (LiNbO 3), III-V semiconductor compound (as InP, GaAs), silicon-on-insulator (Silicon-on-Insulator, SOI), silicon oxynitride (SiON), glass and polymkeric substance (Polymer) etc.Optical waveguide core layer transmission of materials light signal, requires that loss is low, thicknesses of layers is consistent with refractive index homogeneity, birefringence is little, and smooth with the interface of covering.PLC requires that covering is enough thick, as 0.34-0.75 Δ % optical waveguide needs upper and lower cladding thickness to reach 12-20 μm, to ensure that the light wave transmitted can not be leaked; Temperature characterisitic and the sandwich layer difference of next clad material are little, affect performance to reduce to produce stress birefrin in waveguide, as polarization correlated in AWG and centre wavelength temperature sensitivity; This top covering material should have good mobility, step and channel form because optical waveguide core layer has been etched out, and easy like this space of filling sandwich layer and covering completely reaches wraps up effect closely.Usually at SiO 2need in material to mix certain B 2o 3, P 2o 5and GeO 2deng, regulate SiO 2refractive index, thermal expansivity and softening temperature.
The size that PLC integrated level increases requirement optical waveguide is less, and its bending radius is less.Table 1 is the table of comparisons of optical waveguide design Δ %, thickness, width and performance, and sandwich layer Δ increases for major path AWG, VMUX and ring oscillation wave filter etc., has very crucial meaning.But along with sandwich layer Δ increases, loss also increases.
Table 1. optical waveguide design parameter: Δ %, thickness, width and performance
Below with SiO 2base SiO 2 waveguide is example, and introduce existing planar optical waveguide technique, whole technique is divided into seven steps:
1) adopt CVD technique or FHD (flame hydrolysis deposition flame hydrolysis) on substrate, prepare certain thickness even SiO 2rete, makes SiO by high-temperature annealing process 2film densification, as waveguide core layer, wherein doped germanium element, the refractive index contrast required for acquisition;
2) on sandwich layer, prepare the overlayer of layer of metal film;
3) on metallic diaphragm, carry out photoetching, the waveguide pattern of needs is transferred on metallic diaphragm with photoresist, form photomask;
4) dry etch process is adopted, as reactive ion etching (Reactive Ion Etching, be called for short RIE) or sense coupling (Inductively Couple Plasma, be called for short ICP), the metal cladding in non-lithographic glue region is etched away, remove residue photoresist, obtain metal mask;
5) adopt ICP to be etched by the sandwich layer of the non-waveguide region outside metal mask, formed and there is three-dimensional waveguide pattern, remove residual metallic mask, obtain optical waveguide core layer lines;
6) adopt CVD technique or FHD on optical waveguide core layer lines, cover certain thickness Uniform Doped SiO2 rete, form waveguide top covering by annealing densification process, obtain planar optical waveguide device chip;
7) go out each planar optical waveguide device chip from cutting and separating wafer, be packaged into device according to each self-application.
Silicon planar lightwave leads the several gordian techniquies in technique:
1) PLC waveguide design
PLC integrated level increases, and require that the size of optical waveguide is less, the bending radius of waveguide is less.Because waveguide bend produces accessory loss, usually take the method increasing core refractive rate, require the germanium amount that increase silicon dioxide sandwich layer is mixed.Because refractive index is relevant to wavelength, loss is with wavelength variations, wavelength coverage from 1250-1650nm is applied, although existing design can realize the structure that loss meets full bandwidth, but be difficult in manufacturing process effectively control, the qualification rate of full bandwidth is not high, and therefore the chip manufacturing of full bandwidth is a difficult problem of industry.
2) PLC optical waveguide manufacture craft
Adopt semiconductor technology by wave guide pattern transfer or be replicated on sandwich layer, existing method is usually through photoetching+metal film dry etching+SiO 2sandwich layer etching three process makes, and forms three-dimensional SiO 2wave guide pattern lines.Wherein to realize the accurate transfer of figure, have photoetching and dry etching two steps to metal film.
Photoetching is by the process on the Graphic transitions photoresist on mask.Photoetching process is first the critical process link making PLC wave guide pattern structure, and its processing quality directly affects follow-up making and device performance, yield rate etc.Photoetching process is the process of a relative complex, is one of of paramount importance processing step during PLC chip manufactures.With regard to current process conditions, artificial participation be broken away from or be completely free of to whole photolithography process can not, also has the factor such as stability, technique starting material, environmental impact of process equipment still to exist simultaneously.
At SiO 2before sandwich layer carries out deep etching formation wave guide pattern lines, existing process will make metal mask (also referred to as dura mater) usually.Dry method (ICP/RIE) etching is the conventional fabrication techniques of metal mask, is by the process on the Graphic transitions metal film on lay photoetching mask plate.ICP technique, ion concentrates on direction of an electric field reaction, and reaction is anisotropy, also has the bombardment effect of ion simultaneously, and directivity is better, and RIE is Ions Bombardment+chemical reaction, and wherein chemical reaction is with tropism.ICP/RIE etching is second time image transfer, and its effect is subject to photomask image, outside the impact such as Sidewall angles, also has the impact of ICP/RIE technique itself, so the meeting error that accumulation is certain further.
Under the covering of metal mask, to SiO 2sandwich layer carries out the dry etching of the degree of depth, forms the optical waveguide lines with certain physical dimension, and the transfer finally completing waveguide pattern makes.For SiO 2sandwich layer waveguide lines, make its sidewall and smooth, to reduce the scattering loss of waveguide.The deviations such as the sidewall of metal mask image and angle, can be delivered to SiO further in dry etching 2sandwich layer waveguide lines, therefore from metal mask image to optical waveguide lines, can accumulate certain error again.
3) top covering manufacture craft
The top covering realizing waveguide core layer lines covers, and namely to waveguide Step Coverage and trench fill, requires that refractive index RI and thermal expansion are mated with sandwich layer, reduces the residual stress of material internal, to reduce the birefringence benefit of waveguide as far as possible.As everyone knows, array waveguide grating (AWG) makes the filling that difficulty is exactly ducting layer space, easily forms cavity between waveguide.
In above-mentioned first difficult point, need by structural design, improve the tolerance of optical waveguide and the tolerance of technique, reduce technique controlling difficulty.In second critical technological point, for the making of metal mask, Sidewall angles and the waveguide bifurcated error of photomask can be delivered to the changes such as the side wall angle of metal mask, the accurate transfer of the accumulation effect diagram picture of error, and adopt dry etching to need expensive ICP/RIE etching apparatus, use the chlorine of severe toxicity, add cost of manufacture and risk, and efficiency is low.3rd critical technological point mentioned above, the waveguiding structure for high aspect ratio is particularly outstanding, and along with the development of three-dimensional structure components and parts, device geometries is more and more less, and waveguide spacing is little of 1-2 μm, and fill gaps is met difficulty.And for the planar optical waveguide of sandwich construction, under-clad layer material usually with fill the top covering material behavior difference that covers greatly, be in fact asymmetric to the coated of sandwich layer.
At present, for the design of PLC, along with the increase of integrated level, requirement waveguide dimensions reduces, and usually takes to increase core refractive rate and subtracts undersized scheme, require for core material the content increasing germanium, result loss increases, and the homogeneity of making also reduces, and size reduction can increase coupling loss.For the making of optical waveguide, metal mask is commonly used dry method (ICP/RIE) and is etched manufacturing technology, needs cubic graph as transfer process, too increases the accumulation of error.In top covering making, the people such as GC Schwartz are at " Gap-fill with PECVD SiO2using deposition/sputter etch cycles, " Journal of the Electrochemical Society, vol.139, No.3, pp.927-932, in 1992, a solution is proposed, realize PECVD by periodicity deposition and argon sputter and deposit the filling causing space, the top covering material that first deposition rate is thinner, use argon gas physical etchings again, the nearly covering closed on top, gap is removed, and then the covering of deposition of thin, so repeatedly avoid the formation in cavity.The method needs repeatedly to carry out such deposition and etching, and efficiency is very low, is not suitable for batch production.
External conventional solution is the silica glass (Boro-phospho-silicate glass, BPSG) using boron and phosphorus doping at present.The fusing point of BPSG, lower than sandwich layer and top covering, increases mobility, therefore can pass through high temperature dense sclerosis, makes the top covering backflow of molten state fill space.But, this method additionally uses hypertoxic gas phosphine, and phosphorus ratio is easier to make moist, the thermal expansivity of material is large, and add that under-clad layer is different silica glass material, difference of thermal expansion coefficients is large, it is large that birefringence effect controls difficulty, which increases the instability of product and the danger of technique.
The thickness of usual PECVD primary depositing is no more than 6 microns, and top covering thickness requirement is to 20 microns, and adopt separately PECVD to make top covering, need Multiple depositions and the high temperature anneal, efficiency is very low, and cost of manufacture is high.
FHD technique primary depositing can make the covering of more than 20 microns, there is the advantage that efficiency high cost of manufacture is low, but on cladding index controls, accurately to realize uniform refractive index contrast Δ, more difficult, the yields of the final products that can affect, especially makes for array waveguide grating (AWG), therefore usually lessly in the industry to apply.
Summary of the invention
In order to make up above-mentioned the deficiencies in the prior art, the present invention proposes a kind of planar optical waveguide and preparation method thereof.
Technical matters of the present invention is solved by following technical scheme:
A kind of planar optical waveguide, comprise: under-clad layer, waveguide core layer, separation layer and top covering, the refractive index of described top covering and described under-clad layer is equal and higher than the refractive index of described separation layer, described separation layer is formed on described under-clad layer, described waveguide core layer is coated in described separation layer completely, and described top covering is formed on described separation layer.
Preferably, the thickness of described separation layer is 1-10 μm; Further preferred thickness is 3-5 μm.
Preferably, the material of described separation layer is the silicon dioxide doped with fluorine and germanium, the doping quality of wherein said fluorine is the 1-2% of described silicon dioxide quality, and the doping quality of described germanium is the 3-6% of described silicon dioxide quality, and the doping mass ratio of described fluorine and germanium is greater than 1:3.
Separation layer adopts the material of above technical scheme, its refractive index is lower than the refractive index of top covering (or under-clad layer), and fusing point is lower than the fusing point of waveguide core layer, there is good mobility, be convenient to the backflow when the high temperature anneal and fill each gap of waveguide core layer.
Preferably, the material of described top covering is the silicon dioxide doped with fluorine and germanium, the doping quality of wherein said fluorine is the 1-3% of described silicon dioxide quality, and the doping quality of described germanium is the 3-6% of described silicon dioxide quality, and the doping mass ratio of described fluorine and germanium is 1:3.
Top covering adopts the material of above technical scheme, and its refractive index is equal with under-clad layer, and fusing point is lower than the fusing point of waveguide core layer, has good mobility, easy densified sintering product.
Preferably, the material of described waveguide core layer is the silicon dioxide of doped germanium.
Preferably, the material of described under-clad layer is silicon dioxide.
Preferably, the refractive index contrast Δ of described separation layer and described top covering or described under-clad layer is 0.1%-0.3%.
Preferably, described under-clad layer is also as substrate; Or described planar optical waveguide also comprises substrate, the material of described substrate is silicon or silicon dioxide.
A preparation method for described planar optical waveguide, comprises the steps:
(1) on described under-clad layer, form the Part I of separation layer;
(2) on the Part I of described separation layer, sandwich layer is formed;
(3) etch described sandwich layer, form the described waveguide core layer with preset structure;
(4) on the Part I of described waveguide core layer and described separation layer, form the Part II of separation layer, the Part II of described separation layer fills the gap of described preset structure completely, the Part I of described separation layer and Part II form described separation layer, and described waveguide core layer is completely coated;
(5) on the Part II of described separation layer, described top covering is formed.
Preferably, described step (3) comprises the steps:
(3.1) on described sandwich layer, apply one deck photoresist, and formed the photomask with predetermined pattern by photoetching process;
(3.2) etch described sandwich layer, obtain the described waveguide core layer with preset structure;
(3.3) described photomask is removed.
Preferably, adopt plasma reinforced chemical vapour deposition technique in described step (1) and/or in step (4), formed after then carrying out the high temperature anneal; Described plasma reinforced chemical vapour deposition technique is: be 250-360 DEG C in growth temperature, gas flow ratio 10-15% (volume fraction) GeH 4: C 2f 6: SiH 4: N 2o is (15-22): (9-13): (15-20): (1800-2400) sccm, and RF input power is 600-750W, and deposit cavity pressure is deposit 10-15 minute under the condition of 350-400mTorr; The process conditions of described the high temperature anneal are: heat up 50-150 minute under the atmosphere of oxygen and inert gas, and in 900-1000 DEG C, constant temperature 20-40 minute, then naturally cools to 20-30 DEG C.
Preferably, described step (5) comprises the steps:
(5.1) utilize combustion burner, adopt flame hydrolysis to form loose top covering on the Part II of described separation layer, the process conditions of described flame hydrolysis are: H 2: 3-6slm; O 2: 6-12slm; Ar:3-6slm; SiCl 4: 60-100sccm; GeCl 4: 8-16sccm; SiF 45-10sccm;
(5.2) described loose top covering is carried out the fine and close cure process of high temperature, then Temperature fall is to 20-30 DEG C, the process conditions of the fine and close cure process of described high temperature are: under the atmosphere of oxygen and inert gas, intensification 30-120 minute, constant temperature 20-40 minute in 900-1100 DEG C.
Tool of the present invention has the following advantages: the refractive index ratio top covering of separation layer or the refractive index of under-clad layer low, the index distribution of planar optical waveguide can be made more excellent, reduce device loss, more easily can realize 1250-1650 full bandwidth performance, solve loss increase that optical waveguide design in prior art brings and sandwich layer to make homogeneity and be deteriorated, be difficult to the difficult problem realizing full bandwidth work, simultaneously, owing to having set up separation layer, require lower than prior art to the material purity of under-clad layer, can reduce costs, further: the technique adopting photomask etching sandwich layer, the inefficiency that the making apparatus solving metal mask is expensive and bring and the problem that cost is high and cubic graph is accumulated as Transfer Error, PECVD is adopted to make the separation layer of low melting point, low-refraction, improve index of refraction homogeneity and the thermal expansion compatibility of waveguide core layer and upper under-clad layer, reduce birefringence and cause Polarization Dependent Loss, separation layer is to the filling in the high aspect ratio space of the structure of waveguide core layer, can meet simultaneously with waveguide core layer refractive index and material behavior mate requirement, improve the quality of products, adopt FHD technique to make top covering, can make efficiency be improved.The invention solves the work of planar optical waveguide full bandwidth and covering make in the difficult problem such as Step Coverage, gap-fill, refractive index homogeneity and thermal expansion matching, all kinds of fiber waveguide device can be widely used in and make.
Accompanying drawing explanation
Fig. 1 a-1i is the schematic diagram of the structure that in the preparation method of the planar optical waveguide of the embodiment of the present invention 1, each step is formed respectively.
Fig. 2 is the index distribution schematic diagram of planar optical waveguide obtained in the embodiment of the present invention 1.
Embodiment
Below contrast accompanying drawing and combine preferred embodiment the invention will be further described.
The invention provides a kind of planar optical waveguide, comprise: under-clad layer, waveguide core layer, separation layer and top covering, the refractive index of described top covering and described under-clad layer is equal and higher than the refractive index of described separation layer, described separation layer is formed on described under-clad layer, described waveguide core layer is coated in described separation layer completely, and described top covering is formed on described separation layer.
In some preferably embodiment, can or its combination in any in preferred following condition:
The thickness of separation layer is 1-10 μm, and further preferred thickness is 3-5 μm.
The material of separation layer is the silicon dioxide doped with fluorine and germanium, and the doping quality of wherein said fluorine is the 1-2% of described silicon dioxide quality, and the doping quality of described germanium is the 3-6% of described silicon dioxide quality, and the doping mass ratio of described fluorine and germanium is greater than 1:3.
The material of top covering is the silicon dioxide doped with fluorine and germanium, and the doping quality of wherein said fluorine is the 1-3% of described silicon dioxide quality, and the doping quality of described germanium is the 3-6% of described silicon dioxide quality, and the doping mass ratio of described fluorine and germanium is 1:3.
The material of waveguide core layer is the silicon dioxide of doped germanium, and the doping of germanium is this area routine.
The material of under-clad layer is silicon dioxide.
The refractive index contrast Δ of separation layer and described top covering or described under-clad layer is 0.1%-0.3%; Refractive index contrast Δ is defined by following equation: refractive index contrast Δ=[(n 1 2-n 2 2)/2n 1 2, wherein n 1for the refractive index of top covering or under-clad layer, n 2for the refractive index of separation layer.
Under-clad layer is also as substrate; Or described planar optical waveguide also comprises substrate, the material of described substrate is silicon or silicon dioxide.
The present invention also provides a kind of preparation method of planar optical waveguide, comprises the steps:
(1) on described under-clad layer, form the Part I of separation layer;
(2) on the Part I of described separation layer, sandwich layer is formed;
(3) etch described sandwich layer, form the described waveguide core layer with preset structure;
(4) on the Part I of described waveguide core layer and described separation layer, form the Part II of separation layer, the Part II of described separation layer fills the gap of described preset structure completely, the Part I of described separation layer and Part II form described separation layer, and described waveguide core layer is completely coated;
(5) on the Part II of described separation layer, described top covering is formed.
Some preferred embodiment in, can or its combination in any in preferred following condition:
Described step (3) comprises the steps:
(3.1) on described sandwich layer, apply one deck photoresist, and formed the photomask with predetermined pattern by photoetching process;
(3.2) etch described sandwich layer, obtain the described waveguide core layer with preset structure;
(3.3) described photomask is removed.
Adopt plasma reinforced chemical vapour deposition technique in described step (1) and/or in step (4), formed after then carrying out the high temperature anneal.
Described plasma reinforced chemical vapour deposition technique is: be 250-360 DEG C in growth temperature, gas flow ratio 10-15%GeH 4: C 2f 6: SiH 4: N 2o is (15-22): (9-13): (15-20): (1800-2400) sccm, RF input power is 600-750W, deposit cavity pressure is deposit 10-15 minute under the condition of 350-400mTorr, wherein, and 10-15%GeH 4refer to: GeH 4with the mixed gas of Ar, wherein GeH 4volume fraction be 10-15%, surplus is Ar.
The process conditions of described the high temperature anneal are: heat up 50-150 minute under the atmosphere of oxygen and inert gas, and in 900-1000 DEG C, constant temperature 20-40 minute, then naturally cools to 20-30 DEG C.
Described step (5) comprises the steps:
(5.1) utilize combustion burner, adopt flame hydrolysis to form loose top covering on the Part II of described separation layer, the process conditions of described flame hydrolysis are: H 2: 3-6slm; O 2: 6-12slm; Ar:3-6slm; SiCl 4: 60-100sccm; GeCl 4: 8-16sccm; SiF 45-10sccm;
(5.2) described loose top covering is carried out the fine and close cure process of high temperature, then Temperature fall is to 20-30 DEG C, the process conditions of the fine and close cure process of described high temperature are: under the atmosphere of oxygen and inert gas, intensification 30-120 minute, constant temperature 20-40 minute in 900-1100 DEG C.
Wherein, inert gas can be at least one in nitrogen, helium and argon gas.In the high temperature anneal: the volume ratio of oxygen and inert gas is with 1:(6-8) be advisable.In the fine and close cure process of high temperature: the volume ratio of oxygen and inert gas is with 1:(8-10) be advisable.
Below to make the planar optical waveguide being applied to shunt, the present invention will be described in detail.
Embodiment 1
The preparation method of planar optical waveguide comprises the steps:
(1) form under-clad layer 2 on substrate 1, the material of substrate 1 is Si, and the material of under-clad layer 2 is SiO 2, as shown in Figure 1a.
(2) adopting plasma reinforced chemical vapour deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) technique, is 320 DEG C in growth temperature, gas flow ratio: 10% (volume fraction) GeH 4: C 2f 6: SiH 4: N 2o is 20:10:17:2000sccm, RF input power is 700W, deposit cavity pressure is deposit 10 minutes under the condition of 380mTorr, then on under-clad layer 2, form the Part I 41 that thickness is the separation layer 4 of 3 μm after carrying out the high temperature anneal, the process conditions of the high temperature anneal are: under the atmosphere of oxygen and inert gas (volume ratio is 1:6), heat up 100 minutes, constant temperature 20 minutes at 950 DEG C, then 20 DEG C are naturally cooled to, as shown in Figure 1 b.
(3) on the Part I 41 of separation layer 4, form sandwich layer 3, the material of sandwich layer 3 is the silicon dioxide of doped germanium, as illustrated in figure 1 c.
(4) on sandwich layer 3, revolve the positive photoetching rubber 5 that the cloth trade mark is AZ3100, the thickness of positive photoetching rubber 5 is determined by the minimum gap of preset structure (waveguide pattern), and in this example, thickness is 1.2 μm, as shown in Figure 1 d.
(5) photoetching process through this area routine forms the photomask 51 with predetermined pattern, as shown in fig. le.
(6) etch sandwich layer 3, after obtaining having the waveguide core layer 31 of preset structure, adopt the AZ stripper being applicable to AZ3100 photoresist to dissolve and remove photomask 51, as shown in Fig. 1 f and 1g.
(7) on the Part I 41 of waveguide core layer 31 and separation layer, with PECVD deposit thickness be the Part II 42 of the separation layer of 3 μm, the same step of process conditions (2) of PECVD, the refractive index of the Part II 42 of separation layer is equal with Part I 41, then through the high temperature anneal, the same step of its process conditions (2), reflux compared with the Part II 42 of the low-melting separation layer of waveguide core layer and fill space between waveguide core layer 31, Part I 41 and the Part II 42 of separation layer form separation layer 4, the material of separation layer 4 is: doped with the silicon dioxide of fluorine and germanium, wherein the doping quality of fluorine is 1.2% of silicon dioxide quality, the doping quality of described germanium is 3% of described silicon dioxide quality, make the refractive index of separation layer 4 lower than the refractive index of under-clad layer 2, separation layer 4 is completely wherein coated by waveguide core layer 31, as shown in figure 1h.
(8) on the Part II 42 of separation layer with the top covering that FHD fast deposition is loose, loose top covering is that the particle banking of the current evenly producing stable top covering material by combustion burner forms, and the process conditions of FHD are: H 2: 4slm; O 2: 9slm; Ar:5slm; SiCl 4: 80sccm; GeCl 4: 15sccm; SiF 46sccm., top covering 6 is formed through the fine and close cure process of high temperature, the material of top covering 6 is the silicon dioxide doped with fluorine and germanium, wherein the doping quality of fluorine is 1.5% of silicon dioxide quality, the doping quality of described germanium is 4.5% of described silicon dioxide quality, make the refractive index of top covering 6 and under-clad layer 2 equal, and the fusing point of top covering 6 is lower than waveguide core layer 31, the process conditions of the fine and close cure process of high temperature are: under the atmosphere of oxygen and argon gas (volume ratio is 1:8), heat up 60 minutes, constant temperature 20 minutes at 1100 DEG C, then Temperature fall to 25 DEG C, obtain planar optical waveguide, as shown in figure 1i.
The index distribution of the planar optical waveguide obtained as shown in Figure 2, (namely refers to horizontal ordinate direction A1 to A2 in fig. 2 successively from the bottom up from the Part II 42 of the Part I 41 of the under-clad layer 2 Fig. 1 i, separation layer, waveguide core layer 3 and separation layer.) refractive index of under-clad layer 2 and top covering 6 is n6, separation layer 4 (comprising 41 and 42) refractive index is n4, and the refractive index of waveguide core layer 31 is n3.
Planar optical waveguide tool prepared by above embodiment has the following advantages:
1) the low-refraction separation layer of several microns is adopted to design, increase optical waveguide to the restriction ability of light intensity, the bending property of optical waveguide can be improved, the bending radius of optical waveguide is reduced, more easily can realize 1250-1650 full bandwidth performance, device size more miniaturization can be made, improve integrated level.
2) compared with common dry etching smithcraft, adopt the way of photomask etching sandwich layer, avoid expensive dry etching equipment, enormously simplify Making programme, reduce cost of manufacture and error, and avoid the use of dry etching metal pair severe toxicity chlorine, process safety improves.
3) with traditional waveguide core layer compared to, the waveguide core layer that fluorine germanium of the present invention mixes the top covering of silicon dioxide and the silicon dioxide of doped germanium is altogether more compatible in material behavior, more easily carry out adjustment and the process optimization of parameter, reduce birefringence effect, and it makes the use avoiding phosphorous toxic gas, reduces process risk.
4) adopt FHD to make top covering 6, greatly reduce control difficulty and the fabrication cycle of technique, and efficiency high cost is low, is more suitable for high-level efficiency suitability for industrialized production
5) technique of the present invention improves yield and the production efficiency of product, except being applied to shunt in above-described embodiment, can also be applied to the making of the fiber waveguide device such as coupling mechanism, array waveguide grating.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For those skilled in the art, without departing from the inventive concept of the premise, some equivalent to substitute or obvious modification can also be made, and performance or purposes identical, all should be considered as belonging to protection scope of the present invention.

Claims (10)

1. a planar optical waveguide, it is characterized in that, comprise: under-clad layer, waveguide core layer, separation layer and top covering, the refractive index of described top covering and described under-clad layer is equal and higher than the refractive index of described separation layer, described separation layer is formed on described under-clad layer, described waveguide core layer is coated in described separation layer completely, and described top covering is formed on described separation layer.
2. planar optical waveguide as claimed in claim 1, is characterized in that: the thickness of described separation layer is 1-10 μm.
3. planar optical waveguide as claimed in claim 1, it is characterized in that: the material of described separation layer is the silicon dioxide doped with fluorine and germanium, the doping quality of wherein said fluorine is the 1-2% of described silicon dioxide quality, the doping quality of described germanium is the 3-6% of described silicon dioxide quality, and the doping mass ratio of described fluorine and germanium is greater than 1:3.
4. planar optical waveguide as claimed in claim 1, it is characterized in that: the material of described top covering is the silicon dioxide doped with fluorine and germanium, the doping quality of wherein said fluorine is the 1-3% of described silicon dioxide quality, the doping quality of described germanium is the 3-6% of described silicon dioxide quality, and the doping mass ratio of described fluorine and germanium is 1:3.
5. planar optical waveguide as claimed in claim 1, is characterized in that: the material of described waveguide core layer is the silicon dioxide of doped germanium; The material of described under-clad layer is silicon dioxide; The refractive index contrast Δ of described separation layer and described top covering or described under-clad layer is 0.1%-0.3%.
6. planar optical waveguide as claimed in claim 1, is characterized in that: described under-clad layer is also as substrate; Or described planar optical waveguide also comprises substrate, the material of described substrate is silicon or silicon dioxide.
7. a preparation method for the arbitrary described planar optical waveguide of claim 1-6, is characterized in that, comprise the steps:
(1) on described under-clad layer, form the Part I of separation layer;
(2) on the Part I of described separation layer, sandwich layer is formed;
(3) etch described sandwich layer, form the described waveguide core layer with preset structure;
(4) on the Part I of described waveguide core layer and described separation layer, form the Part II of separation layer, the Part II of described separation layer fills the gap of described preset structure completely, the Part I of described separation layer and Part II form described separation layer, and described waveguide core layer is completely coated;
(5) on the Part II of described separation layer, described top covering is formed.
8. the preparation method of planar optical waveguide as claimed in claim 7, it is characterized in that, described step (3) comprises the steps:
(3.1) on described sandwich layer, apply one deck photoresist, and formed the photomask with predetermined pattern by photoetching process;
(3.2) etch described sandwich layer, obtain the described waveguide core layer with preset structure;
(3.3) described photomask is removed.
9. the preparation method of planar optical waveguide as claimed in claim 7, is characterized in that, adopts plasma reinforced chemical vapour deposition technique, formed after then carrying out the high temperature anneal in described step (1) and/or in step (4); Described plasma reinforced chemical vapour deposition technique is: be 250-360 DEG C in growth temperature, gas flow ratio 10-15%GeH 4: C 2f 6: SiH 4: N 2o is 15-22:9-13:15-20:1800-2400sccm, and RF input power is 600-750W, and deposit cavity pressure is deposit 10-15 minute under the condition of 350-400mTorr; The process conditions of described the high temperature anneal are: under the atmosphere of oxygen and inert gas, intensification 50-150 minute, in 900-1000 DEG C, constant temperature 20-40 minute, then naturally cools to 20-30 DEG C.
10. the preparation method of planar optical waveguide as claimed in claim 7, it is characterized in that, described step (5) comprises the steps:
(5.1) utilize combustion burner, adopt flame hydrolysis to form loose top covering on the Part II of described separation layer, the process conditions of described flame hydrolysis are: H 2: 3-6slm; O 2: 6-12slm; Ar:3-6slm; SiCl 4: 60-100sccm; GeCl 4: 8-16sccm; SiF 45-10sccm;
(5.2) described loose top covering is carried out the fine and close cure process of high temperature, then Temperature fall is to 20-30 DEG C, the process conditions of the fine and close cure process of described high temperature are: under the atmosphere of oxygen and inert gas, intensification 30-120 minute, constant temperature 20-40 minute in 900-1100 DEG C.
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JP2018017805A (en) * 2016-07-26 2018-02-01 京セラ株式会社 Optical circuit board and method of manufacturing the same
CN108345065A (en) * 2017-01-24 2018-07-31 华为技术有限公司 Light signal processing device and preparation method
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