CN110389407A - The preparation method of optical antenna, phased-array laser radar and optical antenna - Google Patents
The preparation method of optical antenna, phased-array laser radar and optical antenna Download PDFInfo
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- CN110389407A CN110389407A CN201810355993.2A CN201810355993A CN110389407A CN 110389407 A CN110389407 A CN 110389407A CN 201810355993 A CN201810355993 A CN 201810355993A CN 110389407 A CN110389407 A CN 110389407A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 204
- 238000002360 preparation method Methods 0.000 title abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 250
- 238000010276 construction Methods 0.000 claims abstract description 93
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 64
- 239000010703 silicon Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000011241 protective layer Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 241000826860 Trapezium Species 0.000 claims description 13
- 230000005855 radiation Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003752 improving hair Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
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- Optical Integrated Circuits (AREA)
Abstract
The present invention provides the preparation methods of a kind of optical antenna, phased-array laser radar and optical antenna.The optical antenna includes: SOI substrate, waveguiding structure layer, wall, optical grating construction layer and protective layer；SOI substrate includes: bottom silicon layer, buries oxide layer and top silicon layer；Waveguiding structure layer, in the wall that has been sequentially arranged above of waveguiding structure layer, optical grating construction layer and protective layer are formed in the top silicon layer of SOI substrate；Since the refractive index that the difference of the refractive index of the refractive index and wall and protective layer of optical grating construction layer is all larger than preset threshold and optical grating construction layer is higher than the refractive index of wall and protective layer; so the optical grating construction layer has high refractive index contrast; make light wave when diffraction occurs for waveguiding structure layer; the diffraction in SOI substrate direction can be eliminated; light wave can succeed to be emitted upwards; to obtain high radiation efficiency, and then greatly improve the utilization rate of optical antenna.
Description
Technical field
The present embodiments relate to Radar Technology field more particularly to a kind of optical antennas, phased-array laser radar and light
Learn the preparation method of antenna.
Background technique
The concept of phased-array laser radar is suggested already, and a variety of different design schemes are also constantly being carried out.It is basic
Module is also mature, such as light source module, beam splitting module, phase modulation module, but in optical antenna module, how by each wave
It is still a huge challenge that light after leading phase modulation, which efficiently exports integreted phontonics circuit,.This is because the refractive index of waveguide compares air
It is much larger, light is coupled in free space from waveguide it is very difficult so that the radiation efficiency of optical antenna is extremely low, serious shadow
Ring its utilization rate.
Currently, in the world the optical antenna towards phased-array laser radar be broadly divided into dipoles scatter subtype optical antenna and
Non-metallic optical antenna, wherein non-metallic optical antenna is based on raster optical antenna.With the development of integrated optics, light
Grid-type optical antenna due to its simple process, it is compatible with CMOS technology the advantages that, become the most effective coupling side of integreted phontonics
Method.
But existing raster optical antenna, grating is not designed particularly, and conventional grating is used, it causes
Make to dissipate seriously in each waveguide from grating light coupled out, radiation efficiency is extremely low, and then leads to the energy utilization of optical antenna
Rate is extremely low.
Summary of the invention
The embodiment of the present invention provides the preparation method of a kind of optical antenna, phased-array laser radar and optical antenna, solves
Raster optical antenna in the prior art causes to dissipate in each waveguide from grating light coupled out using conventional grating
Seriously, radiation efficiency is extremely low, and then the technical problem for causing the capacity usage ratio of optical antenna extremely low.
In a first aspect, the embodiment of the present invention provides a kind of optical antenna, comprising: SOI substrate, waveguiding structure layer, wall,
Optical grating construction layer and protective layer；
The SOI substrate includes: bottom silicon layer, buries oxide layer and top silicon layer；
Form the waveguiding structure layer in the top silicon layer of the SOI substrate, the top of the waveguiding structure layer successively
It is provided with wall, optical grating construction layer and protective layer；
Wherein, the difference of the refractive index and the refractive index of the wall and the protective layer of the optical grating construction layer is big
In preset threshold and the refractive index of the optical grating construction layer is higher than the refractive index of the wall and the protective layer.
Further, optical antenna as described above, the buries oxide layer are located at the bottom silicon layer and the top silicon
The centre of layer.
Further, optical antenna as described above, the waveguiding structure layer include: slab waveguide array, the conversion of mould spot
Structure and wide planar waveguide；
It is connected between the slab waveguide array and the wide planar waveguide by the mould spot transformational structure.
Further, optical antenna as described above, the mould spot transformational structure is trapezium structure or bevel edge is curve
Class trapezium structure, the short bottom edge side of the mould spot transformational structure is close to the slab waveguide array.
Further, optical antenna as described above, the optical grating construction layer are fully located at the upper of the wide planar waveguide
Side.
Further, optical antenna as described above, screen periods and the wide plate wave in the optical grating construction layer
The effective refractive index and operation wavelength led match, and grating thickness and duty ratio meet upward with main lobe in the optical grating construction layer
Emit the condition of light.
Second aspect, the embodiment of the present invention provide a kind of phased-array laser radar, including as above described in any item optics
Antenna.
Further, phased-array laser radar as described above, the etching of the slab waveguide array in the optical antenna
The consistency of thickness for the leading portion device that depth is connect with the optical antenna.
The third aspect, the embodiment of the present invention provide a kind of method for preparing described in any item optical antennas as above, comprising:
Obtain SOI substrate；
The top silicon layer of the SOI substrate is performed etching to form waveguiding structure layer；
In the disposed thereon wall of the waveguiding structure layer；
It performs etching to form grating knot in the disposed thereon grating material layer of the wall, and to the grating material layer
Structure layer；
In the top growth protecting layer of the optical grating construction layer；
Wherein, the refractive index of the optical grating construction layer and the difference of the refractive index of wall and the protective layer are all larger than pre-
If threshold value and the refractive index of the optical grating construction layer are higher than the refractive index of the wall and the protective layer.
Further, the preparation method of optical antenna as described above, in the disposed thereon grating material of the wall
Before layer, further includes:
According to the light-wave band that the optical antenna emits, the screen periods in the optical grating construction layer are configured,
The effective refractive index and operation wavelength for making the screen periods and the wide planar waveguide match；
The condition for emitting light upwards according to main lobe calculates grating thickness and duty ratio in the optical grating construction layer.
The embodiment of the present invention provides the preparation method of a kind of optical antenna, phased-array laser radar and optical antenna, optics
Antenna includes: SOI substrate, waveguiding structure layer, wall, optical grating construction layer and protective layer；SOI substrate includes: bottom silicon layer, is buried
Oxide layer and top silicon layer；Form the waveguiding structure layer in the top silicon layer of SOI substrate, the top of waveguiding structure layer successively
It is provided with wall, optical grating construction layer and protective layer；Wherein, the refraction of the refractive index of optical grating construction layer and wall and protective layer
The refractive index that the difference of rate is all larger than preset threshold and optical grating construction layer is higher than the refractive index of wall and protective layer.Due to interval
Layer and protective layer have low-refraction, and optical grating construction layer has high refractive index, and the refractive index of optical grating construction layer and interval
The difference of the refractive index of layer and protective layer is all larger than preset threshold, so the optical grating construction layer has high refractive index contrast, makes
Light wave can eliminate the diffraction in SOI substrate direction when diffraction occurs for waveguiding structure layer, and light wave can succeed to be emitted upwards, from
And high radiation efficiency is obtained, and then greatly improve the utilization rate of optical antenna.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram for the optical antenna that the embodiment of the present invention one provides；
Fig. 2 is the structural schematic diagram of optical antenna provided by Embodiment 2 of the present invention；
Fig. 3 is the structural schematic diagram of SOI substrate in optical antenna provided by Embodiment 2 of the present invention；
Fig. 4 is to etch to form waveguiding structure in SOI substrate top silicon layer in optical antenna provided by Embodiment 2 of the present invention
The schematic diagram of the section structure after layer；
Fig. 5 is to etch to form waveguiding structure in SOI substrate top silicon layer in optical antenna provided by Embodiment 2 of the present invention
Overlooking structure diagram after layer；
Fig. 6 is section of the optical antenna provided by Embodiment 2 of the present invention after the disposed thereon wall of waveguiding structure layer
Structural schematic diagram；
Fig. 7 is vertical view of the optical antenna provided by Embodiment 2 of the present invention after the disposed thereon wall of waveguiding structure layer
Structural schematic diagram；
Fig. 8 is optical antenna provided by Embodiment 2 of the present invention in the disposed thereon grating material of wall and etches light
The schematic diagram of the section structure after grid；
Fig. 9 is optical antenna provided by Embodiment 2 of the present invention in the disposed thereon grating material of wall and etches light
Overlooking structure diagram after grid；
Figure 10 is the flow chart of the preparation method for the optical antenna that the embodiment of the present invention four provides；
Figure 11 is the flow chart of the preparation method for the optical antenna that the embodiment of the present invention five provides.
Appended drawing reference:
11- bottom silicon layer 12- buries oxide layer 13- top silicon layer 2- waveguiding structure layer 21- slab waveguide array 22-
Mould spot transformational structure 23- wide planar waveguide 3- wall 4- optical grating construction layer 5- protective layer
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Optical antenna be used to receive or emit light wave, can be applied in many optical systems.Such as phased array swashs
Optical radar.Since the difference of light-wave band can be very big, it is impossible to which a kind of optical antenna is capable of the use of all light waves, i.e.,
Make to can be used identical scheme, parameters therein also may require that the difference of the light-wave band handled according to optical antenna and
Corresponding variation is generated, in order to express conveniently, in the various embodiments of the invention, all by taking light-wave band is 1.5~1.6 μm as an example
To be illustrated.
Fig. 1 is the structural schematic diagram for the optical antenna that the embodiment of the present invention one provides, as shown in Figure 1, the present embodiment provides
Optical antenna include: SOI substrate, waveguiding structure layer 2, wall 3, optical grating construction layer 4 and protective layer 5.
Wherein, SOI substrate includes: bottom silicon layer 11, buries oxide layer 12 and top silicon layer 13.
Specifically, in the present embodiment, waveguiding structure layer 2 is formed in the top silicon layer 13 of SOI substrate, in waveguiding structure layer 2
Be sequentially arranged above wall 3, optical grating construction layer 4 and protective layer 5.
Wherein, the difference of the refractive index of optical grating construction layer 4 and the refractive index of wall 3 and protective layer 5 is all larger than default threshold
Value and the refractive index of optical grating construction layer 4 are higher than the refractive index of wall 3 and protective layer 5.
In the present embodiment, SOI substrate full name is silicon substrate on insulating layer.The SOI substrate includes: bottom silicon layer 11, is buried
Oxide layer 12 and top silicon layer 13.Wherein, buries oxide layer 12 is located at the centre of bottom silicon layer 11 and top silicon layer 13.Specifically,
In the present embodiment, each layer of the material and thickness of SOI substrate can be customized according to different requirements, can also be using conventional
The SOI substrate of standard CMOS process.
In the present embodiment, waveguiding structure layer 2 can be formed by etching the top silicon layer 13 of SOI substrate.In waveguide junction
Include at least in structure layer 2: slab waveguide array can also include mould spot transformational structure and wide planar waveguide etc., in the present embodiment
It does not limit this.
In the present embodiment, wall 3, the wall 3 can be formed in the top of waveguiding structure layer 2 by the method for deposition
With low-refraction, the material for preparing wall 3 can be silica.
In the present embodiment, grating material layer can be formed above wall 3 by the method for deposition, to grating material layer
Using electron beam exposure or stepper litho and the method for combination ICP etching, make to form optical grating construction layer 4 above wall 3.Its
In, which has high refractive index, which can be polysilicon layer.
In the present embodiment, protective layer 5 can be formed above optical grating construction layer 4 by the method for growth, the protective layer 5 tool
There is low-refraction, material can be silica.
In the present embodiment, wall 3 and protective layer 5 have low-refraction, and it is phase that optical grating construction layer 4, which has high refractive index,
For, i.e. the refractive index of optical grating construction layer 4 refractive index that is higher than wall 3 and protective layer 5, in order to have Grating Mechanism layer
High refractive index contrast, the refractive index of optical grating construction layer 4 and the difference of the refractive index of wall 3 and protective layer 5 are all larger than default
Threshold value, the preset threshold are obtained by test of many times.
Wherein, the transmission wavelength of the preset threshold and light, optical grating construction layer material, material spacer layer, protective layer material have
It closes, in SOI substrate, preset threshold is usually taken between 0.5~2.5.
Optical antenna provided in this embodiment, comprising: SOI substrate, waveguiding structure layer 2, wall 3, optical grating construction layer 4 and
Protective layer 5；SOI substrate includes: bottom silicon layer 11, buries oxide layer 12 and top silicon layer 13, in 13 shape of top silicon layer of SOI substrate
At waveguiding structure layer 2, wall 3, optical grating construction layer 4 and protective layer 5 have been sequentially arranged above in waveguiding structure layer 2；Wherein,
The difference of the refractive index of the refractive index and wall 3 and protective layer 5 of optical grating construction layer 4 is all larger than preset threshold.Due to wall 3
There is low-refraction with protective layer 5, and optical grating construction layer 4 has high refractive index, and the refractive index of optical grating construction layer 4 and interval
The difference of the refractive index of layer 3 and protective layer 5 is all larger than preset threshold, so the optical grating construction layer 4 has high refractive index contrast,
Making light wave when diffraction occurs for waveguiding structure layer 2, the diffraction in SOI substrate direction can be eliminated, light wave can succeed to be emitted upwards,
To obtain high radiation efficiency, and then greatly improve the utilization rate of optical antenna.
Fig. 2 is the structural schematic diagram of optical antenna provided by Embodiment 2 of the present invention, as shown in Fig. 2, the present embodiment provides
Optical antenna on the basis of the optical antenna that the embodiment of the present invention one provides, further include following characteristics.
Further, Fig. 3 is the structural schematic diagram of SOI substrate in optical antenna provided by Embodiment 2 of the present invention, such as Fig. 3
Shown, in the present embodiment, buries oxide layer 12 is located at bottom silicon layer 11 and top silicon layer 13 in the SOI substrate of the optical antenna
It is intermediate.
Optionally, in the present embodiment, the SOI substrate of conventional criteria CMOS technology is selected, wherein the material of bottom silicon layer 11
Material is silicon, and with a thickness of 500~600 μm, the material of buries oxide layer 12 is silica, with a thickness of 2 μm, top silicon layer 13
Material is silicon, with a thickness of 220nm.
Further, Fig. 4 is to etch to be formed in SOI substrate top silicon layer in optical antenna provided by Embodiment 2 of the present invention
The schematic diagram of the section structure after waveguiding structure layer, Fig. 5 be optical antenna provided by Embodiment 2 of the present invention at the top of SOI substrate
Silicon layer etches the overlooking structure diagram after forming waveguiding structure layer.In Fig. 4, due to being carried out to SOI substrate top silicon layer
Full etching forms waveguiding structure layer, so not marking out top silicon layer 13 in Fig. 4.Based on very same reason, in Fig. 6 and Fig. 8
Top silicon layer 13 is not marked out, and as shown in Figure 4 and Figure 5, in the present embodiment, waveguiding structure layer 2 includes: slab waveguide array yet
21, mould spot transformational structure 22 and wide planar waveguide 23.
Wherein, it is connected between slab waveguide array 21 and wide planar waveguide 23 by mould spot transformational structure 22.
Specifically, in the present embodiment, the size uniformity of every slab waveguide causes in slab waveguide array 21, and in level
Distribution.It is connected between every slab waveguide and wide planar waveguide 23 by mould spot transformational structure 22, to make light wave from each bar shaped
Waveguide is transitioned into well in wide planar waveguide 23, reduces the energy loss caused by front and back wave guide mode spot mismatches.
Optionally, in mould spot transformational structure 22 class trapezium structure bevel edge curve can for hyperbola or sine curve or
Other forms curve.
Preferably, in the present embodiment, mould spot transformational structure 22 is trapezium structure or class trapezium structure, mould spot transformational structure
22 short bottom edge side is close to slab waveguide array 21.
In the present embodiment, mould spot transformational structure 22 is trapezium structure or class trapezium structure, to make light wave from each bar shaped wave
Leading can more be transitted smoothly in wide planar waveguide 23, further reduce the energy caused by front and back wave guide mode spot mismatches
Amount loss.
Wherein, the length of the mould spot transformational structure 22 of the trapezium structure or class trapezium structure the long more mould spot can be enable more flat
Sliding ground is transitioned into wide planar waveguide 23 from slab waveguide array 21, so, it is greater than 15 μm using length in the present embodiment.
Further, in this embodiment in order to make slab waveguide array 21 be input to the mode in mould spot transformational structure 22
As far as possible with the pattern match of the wide planar waveguide 23 in rear end, each output end of mould spot transformational structure 22 is closely coupled, is not spaced.Mould
The output width of spot transformational structure 22 is determined that the output width of spot-size converter is 0.5~5 in the present embodiment by waveguide spacing
μm。
In the present embodiment, since refractive index of the silicon for 1.5~1.6 mu m wavebands is about 3.47, and consider slab waveguide
The diffraction limit problem of array 21 and the waveguide minimum widith of slab waveguide array 21 need to be greater than the middle institute of slab waveguide array 21
Effective half-wavelength of communication mode, thus be arranged the slab waveguide array 21 of the optical antenna duct width be 400~
600nm.Since 21 adjacent spacing of slab waveguide array will have a direct impact on the far-field divergence angle of optical antenna, waveguide spacing is closer,
The angle of divergence is bigger, and waveguide spacing is remoter, and the angle of divergence is smaller.But waveguide spacing is too far to will also result in detrimental effect, such as optics
The scanning range of antenna can reduce.So the waveguide spacing of slab waveguide array 21 can not be too far nor too close, the bar shaped
The waveguide spacing of waveguide array 21 can be obtained by test of many times, it is preferable that in the present embodiment, the slab waveguide array 21
Waveguide spacing is 0.5~5 μm.
In the present embodiment, the width of wide planar waveguide 23 is influenced by front end slab waveguide spacing and number, can be before
End slab waveguide spacing and number are configured, and the length of the wide planar waveguide 23 is greater than 40 μm.
Further, Fig. 6 is optical antenna provided by Embodiment 2 of the present invention at the disposed thereon interval of waveguiding structure layer
The schematic diagram of the section structure after layer, Fig. 7 are disposed thereon of the optical antenna provided by Embodiment 2 of the present invention in waveguiding structure layer
Overlooking structure diagram after wall.As shown in Figure 6 and Figure 7, in the present embodiment, which is deposited on wide plate wave
23 top is led, the thickness of the wall 3 will have a direct impact on the coupling of light wave and grating in wide waveguide, and wall 3 is thicker, light wave
It is less susceptible to couple, wall 3 is too thin to provide enough low index contrast degree to grating, to influence emission effciency.
The thickness of the wall 3 can be obtained by test of many times in the present embodiment, it is preferable that can be 50~150nm.
Preferably, Fig. 8 be optical antenna provided by Embodiment 2 of the present invention wall disposed thereon grating material simultaneously
The schematic diagram of the section structure after etching grating, Fig. 9 are optical antenna provided by Embodiment 2 of the present invention in the top of wall
Deposition grating material simultaneously etches the overlooking structure diagram after grating, as shown in Figure 8 and Figure 9, in the present embodiment, grating knot
Structure layer 4 is fully located at the top of wide planar waveguide 23.
Specifically, it when optical antenna forms high refractive index contrast optical grating construction layer 4, first has to determine optical grating construction layer
4 region, since the waveguide on the top silicon layer 13 of SOI substrate is wider better to grating coupling effect, so by optical grating construction
Layer 4 is disposed entirely within the top of wide planar waveguide 23, to reach better coupling effect.
Further, in the present embodiment, effective refraction of the screen periods in optical grating construction layer 4 and wide planar waveguide 23
Rate and operation wavelength match.Preferably, the screen periods of optical grating construction layer 4 are 1.1~1.3 μm.
Specifically, in the present embodiment, to effective refraction of screen periods and wide planar waveguide 23 in optical grating construction layer 4
Rate and operation wavelength are debugged repeatedly, check the emission results of optical antenna, make screen periods and width in optical grating construction layer 4
The effective refractive index and operation wavelength of planar waveguide 23 match, and prevent wavelength corresponding to the emission peak efficiency of optical antenna
Deviate default wave band.
Preferably, in the present embodiment, grating thickness and duty ratio meet and emit light upwards with main lobe in optical grating construction layer 4
Condition.
Specifically, since the thickness of grating and duty ratio determine the state that the light wave being coupled in grating emits upwards,
If optical grating construction is suitable, light wave will form oscillation in grating, and is repeatedly coupled and emitted, to greatly improve hair
Penetrate efficiency.And if optical grating construction determined by the launching condition with main lobe cannot make graing lobe formed vibrate and emit, from rather than
Graing lobe is perfectly often inhibited, substantially increases the utilization rate of energy., it is preferable that being directed to 1.5~1.6 in the present embodiment
Mu m waveband, the duty ratio of the grating in optical grating construction layer 4 are 0.36~0.44, and grating thickness is 420~480nm.
Optical antenna provided in this embodiment, grating thickness and duty ratio, which meet, in optical grating construction layer 4 emits light with main lobe
Condition, light wave can be made to launch above grating with very high efficiency, and only main lobe meets oscillating condition, graing lobe is not
Meet oscillating condition, to ideally inhibit the transmitting of graing lobe.
Further, in the present embodiment, protective layer 5 with a thickness of 2 μm or other numerical value, in the present embodiment not to this
It limits.
The embodiment of the present invention three provides a kind of phased-array laser radar, which includes embodiment one or reality
The optical antenna of the offer of example two is provided.
Wherein, the structure and function Yu embodiment one or embodiment two of the optical antenna of the phased-array laser radar provide
The structure and function of optical antenna is identical, and this is no longer going to repeat them.
Preferably, in the present embodiment, the etching depth of the slab waveguide array 21 in optical antenna and optical antenna connect
The consistency of thickness of the leading portion device connect.
Specifically, due in phased-array laser radar optical antenna connect with front-end devices, the bar shaped wave in optical antenna
Lead the etching depth of array 21 and the consistency of thickness of leading portion device that optical antenna is connect, the front-end devices can be include bending
21 structure of slab waveguide array of waveguide, the i.e. optical antenna need to be consistent with curved waveguide.In order to be preferably minimized loss, adopt
Slab waveguide array 21, i.e., the etching depth and SOI of the slab waveguide array 21 in optical antenna are carved with the method for full etching
The thickness of the top silicon layer 13 of substrate is equal.If the top silicon layer 13 of SOI substrate with a thickness of 220nm, slab waveguide array
21 etching depth is 220nm.The slab waveguide array 21 can make the bending loss of front end curved waveguide reach minimum, and waveguide is curved
The energy that song is revealed reaches minimum.
Figure 10 is the flow chart of the preparation method for the optical antenna that the embodiment of the present invention four provides, as shown in Figure 10, this reality
Antenna in the embodiment of the present invention one can be prepared in the preparation method for applying the optical antenna of example offer, provided in this embodiment
The preparation method of optical antenna includes the following steps.
Step 1001, SOI substrate is obtained.
In the present embodiment, the SOI substrate of conventional criteria CMOS technology can be directly acquired, wherein the material of bottom silicon layer 11
For silicon, with a thickness of 500~600 μm, the material of buries oxide layer 12 is silica, with a thickness of 2 μm, the material of top silicon layer 13
Material is silicon, with a thickness of 220nm.Or obtain the other SOI substrates prepared, each of these layer of material and thickness root
It is prepared according to different requirements, is not limited this in the present embodiment.
Step 1002, SOI substrate top silicon layer is performed etching to form waveguiding structure layer.
Wherein, waveguiding structure layer 2 includes at least: slab waveguide array 21, can also include mould spot transformational structure 22 and width
Planar waveguide 23 does not limit this in the present embodiment.
Wherein, the method for the method that electron beam exposure or the nearly formula photoetching of step can be used in pattern transfer, etching can be induction
The method (referred to as: ICP method) or other methods of coupled plasma etch do not limit this in the present embodiment.
Step 1003, in the disposed thereon wall of waveguiding structure layer.
Specifically, in the present embodiment, the method (referred to as: PECVD method) of plasma-enhanced chemical vapor deposition PECVD can be used
In the disposed thereon wall 3 of ducting layer.
Wherein, the refractive index of the wall 3 is lower than the refractive index of optical grating construction layer 4, and the refractive index of optical grating construction layer 4
It is greater than preset threshold with the difference of wall 3, so that optical grating construction layer 4 has high refractive index contrast.The material of the wall 3
It can be silica.
Step 1004, in the disposed thereon grating material layer of wall, and grating material layer is performed etching to form grating
Structure sheaf.
Specifically, the method deposition grating material layer of plasma-enhanced chemical vapor deposition PECVD can be used, and use electron beam
It exposes or walks nearly formula photoetching and grating material layer is performed etching to form optical grating construction layer 4 in conjunction with ICP method.
Wherein, which has high refractive index, can be polysilicon layer.
Step 1005, in the top growth protecting layer of optical grating construction layer.
Wherein, protective layer 5 has low-refraction, can be silicon dioxide layer, and the refractive index of optical grating construction layer 4 and guarantor
The difference of the refractive index of sheath 5 is all larger than preset threshold, so that optical grating construction layer 4 has high refractive index contrast.
The preparation method of optical antenna provided in this embodiment, comprising: obtain SOI substrate；To the top silicon layer of SOI substrate
It performs etching to form waveguiding structure layer；In the disposed thereon wall of waveguiding structure layer；In the disposed thereon grating material of wall
The bed of material, and grating material layer is performed etching to form optical grating construction layer；In the top growth protecting layer of optical grating construction layer；Wherein,
The difference of the refractive index of optical grating construction layer and the refractive index of wall and protective layer is all larger than preset threshold and optical grating construction layer
Refractive index is higher than the refractive index of wall and protective layer.Since wall and protective layer have a low-refraction, and optical grating construction layer
Difference with high refractive index, and the refractive index of the refractive index of optical grating construction layer and wall and protective layer is all larger than default threshold
Value makes light wave when diffraction occurs for waveguiding structure layer, can eliminate so the optical grating construction layer has high refractive index contrast
The diffraction in SOI substrate direction, light wave can succeed to be emitted upwards, to obtain high radiation efficiency, and then greatly improves optics
The utilization rate of antenna.
Figure 11 is the flow chart of the preparation method for the optical antenna that the embodiment of the present invention five provides, as indicated in figure 11, this
The basis of the preparation method for the optical antenna that the preparation method for the optical antenna that embodiment provides is provided in the embodiment of the present invention four
On, step 1001- step 1005 is refined, and further include that the screen periods in optical grating construction layer and are accounted for thickness
Sky is than determining step, then the preparation method of optical antenna provided in this embodiment includes the following steps.
Step 1101, SOI substrate is obtained.
Further, in this embodiment SOI substrate includes: bottom silicon layer 11, buries oxide layer 12 and top silicon layer 13, bury
Oxide layer 12 is located at the centre of bottom silicon layer 11 and top silicon layer 13.
Specifically, it in order to compatible with CMOS technology, is served as a contrast in the present embodiment using the SOI of conventional criteria CMOS technology
Bottom.Wherein, the material of bottom silicon layer 11 is silicon, and with a thickness of 500~600 μm, the material of buries oxide layer 12 is silica,
With a thickness of 2 μm, the material of top silicon layer 13 is silicon, with a thickness of 220nm.
Step 1102, the top silicon layer in SOI substrate is performed etching to form waveguiding structure layer.
Further, in the present embodiment, waveguiding structure layer 2 includes: slab waveguide array 21,22 He of mould spot transformational structure
Wide planar waveguide 23.
Wherein, it is connected between slab waveguide array 21 and wide planar waveguide 23 by mould spot transformational structure 22.
Specifically, in the present embodiment, the size uniformity of every slab waveguide causes in slab waveguide array 21, and in level
Distribution.It is connected between every slab waveguide and wide planar waveguide 23 by mould spot transformational structure 22, to make light wave from each bar shaped
Waveguide is transitioned into well in wide planar waveguide 23, reduces the energy loss caused by front and back wave guide mode spot mismatches.
Preferably, in the present embodiment, mould spot transformational structure 22 is trapezium structure or class trapezium structure, mould spot transformational structure
22 short bottom edge side is close to slab waveguide array 21.To enable light wave to be more transitted smoothly to width from each slab waveguide
In planar waveguide 23, the energy loss caused by front and back wave guide mode spot mismatches is further reduced.
Preferably, in the present embodiment, be arranged the slab waveguide array 21 of the optical antenna duct width be 400~
600nm.The waveguide spacing of the slab waveguide array 21 is 0.5~5 μm.The length of wide planar waveguide 23 is greater than 40 μm.
Step 1103, in the disposed thereon wall of waveguiding structure layer.
Specifically, it in the present embodiment, before the disposed thereon wall 3 of waveguiding structure layer 2, needs to wall 3
Thickness is configured, and the thickness of the wall 3 can be obtained by test of many times in the present embodiment, it is preferable that can for 50~
150nm。
Step 1104, the light-wave band emitted according to optical antenna, is configured the screen periods in optical grating construction layer,
And emit the condition of light upwards according to main lobe, calculate grating thickness and duty ratio in optical grating construction layer.
Further, in this embodiment effective refraction to screen periods and wide planar waveguide 23 in optical grating construction layer 4
Rate and operation wavelength are debugged repeatedly, check the emission results of optical antenna, make screen periods and width in optical grating construction layer 4
The effective refractive index and operation wavelength of planar waveguide 23 match, and prevent wavelength corresponding to the emission peak efficiency of optical antenna
Deviate default wave band.
Preferably, the screen periods of optical grating construction layer 4 are 1.1~1.3 μm.
Further, since the thickness of grating and duty ratio determine the shape that the light wave being coupled in grating emits upwards
State, if optical grating construction is suitable, light wave will form oscillation in grating, and is repeatedly coupled and emitted, to greatly mention
High emission efficiency.And if optical grating construction determined by the launching condition with main lobe cannot make graing lobe form oscillation and emit, from
And graing lobe is perfectly inhibited very much, substantially increase the utilization rate of energy., it is preferable that being directed to 1.5 in the present embodiment
~1.6 mu m wavebands, the duty ratio of the grating in optical grating construction layer 4 are 0.36~0.44, and grating thickness is 420~480nm.
Step 1105, in the disposed thereon grating material layer of wall, and grating material layer is performed etching to form grating
Structure sheaf.
Step 1106, in the top growth protecting layer of optical grating construction layer.
The step 1105 and step 1106 and the embodiment of the present invention four of the preparation method of optical antenna provided in this embodiment
The step 1004 of the preparation method of the optical antenna of offer and the implementation of step 1005 are identical, and this is no longer going to repeat them.
The preparation method of optical antenna provided in this embodiment, before the disposed thereon grating material layer of wall, also
Include: according to optical antenna emit light-wave band, the screen periods in optical grating construction layer are configured, make screen periods with
The effective refractive index of wide planar waveguide matches；Emit the condition of light according to main lobe, calculates the grating thickness in optical grating construction layer
And duty ratio, grating thickness and duty ratio meet with the condition of main lobe transmitting light in optical grating construction layer, and light wave can be made with very high
Efficiency launch above grating, and only main lobe meets oscillating condition, and graing lobe is unsatisfactory for oscillating condition, thus ideally
Inhibit the transmitting of graing lobe.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of optical antenna characterized by comprising SOI substrate, waveguiding structure layer, wall, optical grating construction layer and protection
Layer；
The SOI substrate includes: bottom silicon layer, buries oxide layer and top silicon layer；
The waveguiding structure layer is formed in the top silicon layer of the SOI substrate, in being sequentially arranged above for the waveguiding structure layer
There are wall, optical grating construction layer and protective layer；
Wherein, the refractive index of the optical grating construction layer and the difference of the refractive index of the wall and the protective layer are all larger than pre-
If threshold value and the refractive index of the optical grating construction layer are higher than the refractive index of the wall and the protective layer.
2. optical antenna according to claim 1, which is characterized in that the buries oxide layer is located at the bottom silicon layer and institute
State the centre of top silicon layer.
3. optical antenna according to claim 2, which is characterized in that the waveguiding structure layer includes: slab waveguide array,
Mould spot transformational structure and wide planar waveguide；
It is connected between the slab waveguide array and the wide planar waveguide by the mould spot transformational structure.
4. optical antenna according to claim 3, which is characterized in that the mould spot transformational structure is trapezium structure or bevel edge
For the class trapezium structure of curve, the short bottom edge side of the mould spot transformational structure is close to the slab waveguide array.
5. optical antenna according to claim 4, which is characterized in that the optical grating construction layer is fully located at the wide plate
The top of waveguide.
6. according to the described in any item optical antennas of claim 2-5, which is characterized in that the grating week in the optical grating construction layer
Phase and the effective refractive index and operation wavelength of the wide planar waveguide match, grating thickness and duty in the optical grating construction layer
Emit the condition of light upwards with main lobe than meeting.
7. a kind of phased-array laser radar, which is characterized in that including optical antenna such as of any of claims 1-6.
8. phased-array laser radar according to claim 7, which is characterized in that the slab waveguide battle array in the optical antenna
The consistency of thickness for the leading portion device that the etching depth of column is connect with the optical antenna.
9. a kind of method for preparing the optical antenna as described in claim any one of 1-6 characterized by comprising
Obtain SOI substrate；
The top silicon layer of the SOI substrate is performed etching to form waveguiding structure layer；
In the disposed thereon wall of the waveguiding structure layer；
It performs etching to form optical grating construction in the disposed thereon grating material layer of the wall, and to the grating material layer
Layer；
In the top growth protecting layer of the optical grating construction layer；
Wherein, the refractive index of the optical grating construction layer and the difference of the refractive index of the wall and the protective layer are all larger than pre-
If threshold value and the refractive index of the optical grating construction layer are higher than the refractive index of the wall and the protective layer.
10. according to the method described in claim 9, it is characterized in that, the disposed thereon grating material in the wall
Before layer, further includes:
According to the light-wave band that the optical antenna emits, the screen periods in the optical grating construction layer are configured, institute is made
The effective refractive index and operation wavelength for stating screen periods and the wide planar waveguide match；
The condition for emitting light upwards according to main lobe calculates grating thickness and duty ratio in the optical grating construction layer.
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