CN108562971B - Waveguide grating filter and manufacturing method thereof - Google Patents
Waveguide grating filter and manufacturing method thereof Download PDFInfo
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- CN108562971B CN108562971B CN201810409526.3A CN201810409526A CN108562971B CN 108562971 B CN108562971 B CN 108562971B CN 201810409526 A CN201810409526 A CN 201810409526A CN 108562971 B CN108562971 B CN 108562971B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
- G02B6/12033—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for configuring the device, e.g. moveable element for wavelength tuning
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
Abstract
The invention provides a waveguide grating filter, which comprises a substrate (1), a waveguide (2) and a beam column structure (3) for supporting the waveguide (2); the beam-column structure (3) comprises column structures (302) which are positioned on two sides of the waveguide (2) and arranged on the substrate (1) and a beam structure (301) for connecting the column structures (302); an air gap (201) is provided between the waveguide (2) and the substrate (1). The waveguide grating filter of the invention adopts a thermal tuning method to change the spectral characteristics of the waveguide grating filter, and an air gap is constructed below the waveguide to realize a local thermal isolation structure between the waveguide and the substrate, so that the vertical flow of heat is blocked, and the power consumption of the waveguide grating filter is reduced. The waveguide grating filter has the advantages of low power consumption, high tuning efficiency, fast tuning, stable structure, easy integration and the like, and has obvious application value in a wavelength division multiplexing system.
Description
[ technical field ] A method for producing a semiconductor device
The invention belongs to the technical field of optical filtering, relates to the technical field of integrated optical waveguide devices, and particularly relates to a waveguide grating filter and a manufacturing method thereof.
[ background of the invention ]
An optical filter is an important photonic device, and is mainly applied to an integrated optical circuit with an optical platform being a silicon-on-insulator (SOI) substrate. The main function of the optical filter is to frequency-separate light containing a plurality of frequency components to obtain one or more of the frequency components. In the framework of optical communication systems, the filters are mainly of the fabry-perot (F-P) filter, mach-zehnder (MZ) filter, grating filter, micro-ring filter, and the like. Compared with other three structures, the grating filter has the advantages of simple manufacture, easy design of spectral characteristics and the like, and is widely concerned.
The tunable waveguide grating filter is an optical filter whose center wavelength can be continuously changed within a certain range, and its tuning mechanism includes various mechanisms, such as current tuning based on the plasma dispersion effect, electrical tuning based on the electro-optical effect, thermal tuning based on the thermo-optical effect, and MEMS tuning based on the micro-electro-mechanical system. The silicon-based thermally tuned waveguide grating filter has the advantages of being more advantageous in the aspect of integrated photonic optical circuits because the thermo-optic coefficient of silicon is larger.
The common silicon-based thermal tuning waveguide grating filter is characterized in that a waveguide structure is etched on the top silicon layer of an SOI wafer, an oxide layer is formed above the waveguide and then a thin film heater layer is evaporated, and a substrate consisting of the oxide layer and the bottom silicon layer is arranged below the waveguide, so that the tuning efficiency is relatively low (less than 100 pm/mW). At present, two improved structures are mainly adopted: firstly, air gaps are arranged on the side edges of the waveguides to form thermal insulation, and secondly, air gaps are etched below the waveguides. The first side air gap structure can ensure relatively high structural stability, but cannot effectively improve the tuning efficiency of the thermally tuned waveguide grating filter. The second structure is to dig the oxide layer right under the waveguide of the silica-based waveguide grating filter to block the heat flow in the vertical direction, so that the waveguide and the substrate form local thermal isolation, thereby reducing the power consumption and improving the thermal tuning efficiency. However, this structure has two problems: one is to increase the response time of the tuning (on the order of hundreds of microseconds), i.e. to reduce the response speed; secondly, because the waveguide grating filter with the air gap structure has no good supporting structure, the waveguide can generate larger deformation, and the stability of a mechanical mechanism is greatly reduced. In summary, the conventional silicon-based thermally tuned waveguide grating filter has low tuning efficiency, low response speed and poor structural stability.
[ summary of the invention ]
The invention aims to overcome the defects of the prior art and provides a waveguide grating filter which has high tuning efficiency, high response speed and relatively stable structure, and a manufacturing method thereof.
The invention relates to a thermally tuned waveguide grating filter, which realizes wavelength selection by changing the temperature of a device in a heating or cooling mode. By combining the air gap with the periodic lateral beam column supporting structure, the response speed and the mechanical structure stability of the tuning structure can be guaranteed on the premise of greatly improving the tuning efficiency, so that the yield in the manufacturing process is improved.
In order to achieve the above object, the present invention provides a waveguide grating filter, the waveguide grating filter includes a substrate 1 and a waveguide 2 disposed on the substrate 1, the waveguide 2 includes a waveguide body 202, a silica upper cladding 203 disposed above the waveguide body 202, and a thin film heater layer 204 disposed above the silica upper cladding 203, both sides of the waveguide body 202 are engraved with gratings;
wherein the waveguide grating filter further comprises a beam-column structure 3 for supporting the waveguide 2;
the beam-column structure 3 comprises column structures 302 arranged on the substrate 1 and positioned at two sides of the waveguide 2, and a beam structure 301 for connecting the column structures 302;
an air gap 201 is provided between the waveguide 2 and the substrate 1.
In a preferred embodiment, the pillar structure 302 includes a plurality of periodically arranged beam-pillar units symmetrically arranged on both sides of the waveguide body 202, and the distance between adjacent beam-pillar units is 5 to 20 μm.
In a preferred embodiment, the waveguide body 202 is a ridge waveguide, and the grating is etched on both sides of an inner ridge of the ridge waveguide.
In the present invention, the cross-sectional shape of the ridge waveguide (single ridge waveguide) is as shown in fig. 3, and W, H, and l are the inner ridge width, the total thickness, the lower plate thickness, and the lower plate width, respectively. By reasonably and optimally designing the four size parameters, the skilled person can realize strict single transverse mode transmission and effectively reduce the optical transmission loss.
In the present invention, the grating is a rectangular grating, and more preferably, the center wavelength is in the C-band of the communication band, namely 1525-.
The parameters of the rectangular grating include the modulation width Δ w, the period Λ and the duty cycle, and those skilled in the art can set the center wavelength and the bandwidth of the transmission spectrum of the waveguide grating filter at some initial values by appropriately designing the selection of these parameters according to the teaching of the prior art.
According to a preferred embodiment, the height of the air gap 201 is 200-300 nm.
According to another preferred embodiment, the thin film heater layer 204 is a metallic thin film heater layer that includes a nickel layer on the lower portion and a gold layer on the upper portion.
When a current is applied to the metal thin film heater layer 204 to generate heat, the amount of heat generation of the metal resistor is controlled by controlling the current, thereby controlling the temperature of the waveguide 202. The temperature change of the waveguide changes the refractive index of the material, so that the spectrum of the waveguide grating moves, and the thermal tuning filtering effect is realized. The nickel layer positioned between the gold layer and the silicon dioxide upper cladding can play a good role in adhesion, so that the gold layer and the silicon dioxide layer are more firmly adhered and are convenient for heat transfer.
Further, the waveguide grating filter of the present invention further includes an optical input terminal 4 and an optical output terminal 5 disposed at both ends of the waveguide 2 and connected by a tapered transition section.
The invention also provides a manufacturing method of the waveguide grating filter, which comprises the following steps:
(1) taking an SOI wafer, coating photoresist on the upper layer of the wafer to construct a waveguide 2 and a beam column structure 3; the SOI wafer is provided with a silicon material substrate, a silicon dioxide middle layer and top silicon;
(2) exposing and developing the photoresist layer, removing the photoresist layer except the waveguide 2 and the beam column structure 3, etching by taking the rest photoresist layer as a mask, and removing the top silicon except the mask to obtain the waveguide with gratings on two sides;
(3) etching off the silicon dioxide middle layer below the waveguide 2 by a wet method to form an air gap 201, and reserving part of the silicon dioxide middle layer of the beam-column structure 3 to form a column structure 302;
(4) depositing an upper cladding layer 203 of silica on top of the waveguide 2;
(5) a thin film heater layer 204 is constructed on the upper surface of the silica upper cladding 203.
The invention constructs an air gap below the waveguide, and basically realizes the thermal insulation between the waveguide and the substrate by utilizing the air gap; supporting the waveguide, the silica upper cladding and the thin film heater by a beam-column structure composed of a beam structure and a column structure; the thin film heater layer is arranged on the silica upper cladding layer, and can generate heat by injecting current into the thin film heater layer, and the heat is transferred to the waveguide in a heat conduction mode to heat the waveguide; therefore, the temperature of the filter can be changed by controlling the injection current of the thin film heater, the refractive index of the material of the waveguide is changed by utilizing the thermo-optic effect, the transmission spectrum of the waveguide grating is changed, and the wavelength selection is realized.
Compared with the prior art, the invention has the following advantages:
the waveguide grating filter changes the spectral characteristics of the waveguide grating filter by adopting a thermal tuning method, and an air gap is constructed below the waveguide, so that a local thermal isolation structure between the waveguide and the substrate is realized, the vertical flow of heat is blocked, and the power consumption of the waveguide grating filter is reduced;
on the other hand, the invention realizes the support of the waveguide, the silica upper cladding and the film heater layer through the periodically arranged beam-column structure, sets corresponding beam-column structure parameters according to the stress and temperature distribution condition of the waveguide, can enable the waveguide grating filter to have good mechanical stability and temperature uniformity, and can increase the response speed at the same time;
in addition, because the contact area between the support structure and the grating waveguide is small, the thermal crosstalk between the waveguide grating filter and adjacent devices in the working process is low, and the waveguide grating filter can be well suitable for dense integration.
In summary, the waveguide grating filter of the present invention has the advantages of low power consumption, high tuning efficiency, fast tuning, stable structure, easy integration, etc., and has significant application value in Wavelength Division Multiplexing (WDM) systems.
[ description of the drawings ]
Fig. 1 is a schematic view of the overall structure of a waveguide grating filter of the present invention;
FIG. 2 is a schematic cross-sectional view of an SOI wafer;
FIG. 3 is a partial top view mechanical diagram of a waveguide and beam-column structure;
figure 4 is a schematic cross-sectional view of a waveguide body and air gap;
FIG. 5 is a schematic structural view of a ridge waveguide;
FIG. 6 is a schematic of a rectangular grating structure;
FIG. 7 is an enlarged partial view of a beam column structural unit;
FIG. 8 is a schematic cross-sectional view of a waveguide body with an upper cladding of silica;
FIG. 9 is a schematic cross-sectional view of a waveguide body with a metal thin film heater layer;
FIG. 10 is a graph of the local temperature distribution of a waveguide grating filter simulated at 60 deg.C;
FIG. 11 shows the transmission spectra at different heating powers for a modulation width of 60 nm;
FIG. 12 shows the results of a response curve test for a waveguide grating filter according to the present invention;
fig. 13 is a block diagram of a process flow for making a waveguide grating filter of the present invention.
[ detailed description ] embodiments
The following examples serve to illustrate the technical solution of the present invention without limiting it.
Example 1
A waveguide grating filter as shown in fig. 1 is constructed.
An SOI wafer having a cross-sectional structure as shown in fig. 2 is used, which has a silicon material substrate 1, a silicon dioxide intermediate layer 6 and a top layer silicon 202.
Photoresist is spin-coated on the top silicon layer of the SOI wafer and is used as a mask for etching to obtain a waveguide 2 and beam-column structures 3 which are periodically arranged on two sides of the waveguide, wherein the top view structure of the waveguide is shown in FIG. 3. Then, for the SOI wafer having the above structure, a silicon dioxide layer under the ridge waveguide is removed by wet etching using hydrofluoric acid (HF), and a portion of silicon dioxide is left as the pillar 302a, so that an air-gap structure as shown in fig. 4 is obtained, and a beam-and-column structure is formed.
The waveguide body 202, the optical input 4 and the optical input 5 are all coupler structures fabricated on the top silicon of the SOI wafer. In this embodiment the waveguide 2 is a ridge waveguide with gratings on both sides of the inner ridge. The ridge waveguide is as shown in 5, and W, H, H, l are ridge width, gross thickness, dull and stereotyped thickness and dull and stereotyped width down respectively, through these four dimensional parameter of reasonable optimal design, can realize strict single transverse mode transmission, reduce light transmission loss greatly. In the present embodiment, for the most commonly used SOI wafers having a top silicon thickness of 220nm, the present embodiment designs W, H, H, l to be 500nm, 220nm, 120nm, and 1.2 μm, respectively.
A rectangular grating as shown in fig. 6 is engraved on the inner ridge of the ridge waveguide 202 to achieve a filtering effect. The central wavelength and bandwidth of the transmission spectrum of the waveguide grating filter can be set to some initial value by designing the modulation width Δ w, the period Λ and the duty ratio of the rectangular grating. In this embodiment, the initial value of the peak wavelength is 1550nm, the modulation width Δ w is 60nm, the period Λ is 300nm, the duty ratio is 1:1, the etching depth is 100nm, and the grating segment length is 600 μm.
In this embodiment, the beam-column structural unit is as shown in fig. 7. An air gap 201 is provided between the waveguide 202 and the substrate 1, and the waveguide 202 is supported by the beam-column structure 3. The beam-column structural unit of the present embodiment is composed of a beam structure 301 and a column structure 302, and its cross-sectional structure is shown in fig. 8 and 9, and the column structure 302 includes: pillars 302a, 302b having the same thickness as the outer ridge of the waveguide body 202, and 302c formed by depositing the upper cladding layer 203 of silicon dioxide are provided on both sides of the waveguide body 202 from an SOI wafer after wet etching to form the air gaps 201. In order to ensure the stability and temperature uniformity of the mechanical structure, a plurality of beam-column units are periodically distributed in the waveguide grating filter, and the distance between every two adjacent beam-column units is 10 mu m.
On the wafer on which the air gap and ridge waveguides were fabricated, a silica overclad was grown by PECVD at a temperature of 100 ℃ in the cavity, resulting in the silica overclad 203, the pillars 302c, and the connecting beam structure therebetween shown in fig. 8.
On the wafer with the grown silica overclad, a metallic thin film heater layer 204 as shown in FIG. 9 was deposited. In this embodiment, a photoresist layer is first spin-coated on a wafer on which a silicon dioxide upper cladding layer is grown, and then the photoresist layer is exposed and developed to remove the photoresist for manufacturing the metal thin film heater layer region; sequentially depositing a nickel layer and a gold layer metal film in an Electron Beam Evaporation (EBE) mode; finally, the metal film with the photoresist below is peeled off by acetone to obtain the metal film heater layer 204.
The thin film heater layer 204 is made of a metal material, so that the heating current of the thin film heater layer 204 is changed to control the heating value of the metal resistor, the temperature of the waveguide main body 202 is adjusted, the refractive index of the material is changed, the spectrum of the waveguide grating is moved, and the thermal tuning filtering effect is achieved. The metallic thin film heater layer 204 includes a nickel layer and a gold layer; the nickel layer is arranged between the gold layer and the silicon dioxide upper cladding and mainly plays a role in adhesion, so that the gold layer and the silicon dioxide layer are more firmly adhered; the thickness of the nickel layer is 40nm, and the thickness of the gold layer is 160 nm.
Thus, the total length of the waveguide grating obtained in this example is 600 μm, and the overall size of the device is less than 1mm × 0.1 mm. The air gap 201 keeps the waveguide body 202 from direct contact with the substrate 1 and is substantially thermally insulated by air. Optionally, by controlling the etching depth of the air gap 201 and the growth thickness of silicon dioxide, the height of the obtained gap is 200 nm.
The maximum temperature rise of the waveguide grating filter of the present embodiment is about 60 ℃, the local temperature distribution of the waveguide obtained by simulation under the temperature rise is as shown in fig. 10, it can be seen from the figure that the waveguide temperature is uniformly distributed along the longitudinal direction, and the temperature of each position is about 87 ℃ (the temperature rise is 60 ℃).
The transmission spectrum of the waveguide grating filter of the present embodiment at different heating powers is shown in fig. 11. Good transmission spectra were obtained at each heating power, verifying the results of the uniform temperature distribution found by the simulation. As can be seen, the transmission spectrum bandwidth of this example (modulation width 60nm) is about 7 nm; compared with the transmission spectrum before temperature rise (long dotted line), the transmission spectrum after heating has obvious drift; the tuning efficiency was greater than 250 pm/mW.
In addition, the input light wavelength is fixed to 1557nm, a square wave electric signal with the frequency of 2KHz is applied to the metal film heater, and the corresponding curve of the waveguide grating filter of the present embodiment is measured as shown in fig. 12. It can be seen from the graph that 10% -90% response time 78 μ s for the rising edge and 52 μ s for the falling edge. Therefore, the waveguide grating filter of the present embodiment can obtain a thermal tuning time of less than 100 μ s, and its tuning speed is fast.
The above embodiments are waveguide grating filters based on beam-column supported air gap containing structures. Those skilled in the art can implement or use the invention in the embodiments, but the embodiments based on the same or similar ideas and principles as those of the present invention are within the scope of the invention.
Claims (9)
1. A waveguide grating filter comprises a substrate (1) and a waveguide (2) arranged on the substrate (1), wherein the waveguide (2) comprises a waveguide main body (202), a silica upper cladding (203) arranged above the waveguide main body (202) and a thin film heater layer (204) arranged above the silica upper cladding (203), and gratings are engraved on two sides of the waveguide main body (202);
characterized in that the waveguide grating filter further comprises a beam-column structure (3) for supporting the waveguide (2);
the beam-column structure (3) comprises column structures (302) which are positioned on two sides of the waveguide (2) and arranged on the substrate (1) and a beam structure (301) for connecting the column structures (302);
an air gap (201) is arranged between the waveguide (2) and the substrate (1);
the manufacturing method of the waveguide grating filter comprises the following steps:
(1) taking an SOI wafer, coating photoresist on the upper layer of the wafer to construct a waveguide (2) and a beam-column structure (3); the SOI wafer is provided with a silicon material substrate, a silicon dioxide middle layer and top silicon;
(2) exposing and developing the photoresist layer, removing the photoresist layer except the waveguide (2) and the beam column structure (3), etching by taking the rest photoresist layer as a mask, and removing top silicon except the mask to obtain the waveguide with gratings on two sides;
(3) etching off the silicon dioxide middle layer below the waveguide (2) by a wet method to form an air gap (201), and reserving part of the silicon dioxide middle layer of the beam-column structure (3) to form a column structure (302);
(4) depositing an upper cladding layer (203) of silica on top of the waveguide (2);
(5) a thin film heater layer (204) is formed on the upper surface of the silica upper cladding layer (203).
2. A waveguide grating filter according to claim 1, characterized in that the beam-column structure (302) comprises a plurality of periodically arranged beam-column elements symmetrically arranged on both sides of the waveguide body (202), and the distance between adjacent beam-column elements is 5-20 μm.
3. A waveguide grating filter as claimed in claim 1, characterised in that the waveguide body (202) is a ridge waveguide, the grating being inscribed on both sides of an inner ridge of the ridge waveguide.
4. A waveguide grating filter as claimed in claim 3, in which the grating is a rectangular grating.
5. A waveguide grating filter as claimed in claim 3, wherein the central wavelength of the grating is in the communications band C-band.
6. A waveguide grating filter as claimed in claim 1, characterized in that the height of the air gap (201) is 200-300 nm.
7. A waveguide grating filter as claimed in claim 1, characterised in that the thin film heater layer (204) is a metallic thin film heater layer comprising a nickel layer at a lower portion and a gold layer at an upper portion.
8. A waveguide grating filter according to claim 1, characterized in that the waveguide grating filter further comprises an optical input (4) and an optical output (5) arranged at both ends of the waveguide (2) and connected by a tapered transition.
9. A waveguide grating filter as claimed in claim 1, characterized in that in step (4), the upper cladding layer (203) of silica is deposited on top of the waveguide (2) by plasma enhanced chemical vapor deposition.
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| CN109581586B (en) * | 2019-01-10 | 2021-03-23 | 上海理工大学 | Compact structure type silicon nitride wavelength division multiplexing photon chip |
| CN112099150A (en) * | 2020-09-28 | 2020-12-18 | 武汉驿路通科技股份有限公司 | Optical fiber array and manufacturing method thereof |
| US11320589B1 (en) * | 2020-10-29 | 2022-05-03 | Globalfoundries U.S. Inc. | Grating couplers integrated with one or more airgaps |
| JP7154457B1 (en) * | 2021-08-20 | 2022-10-17 | 三菱電機株式会社 | Ultrasound imaging device and imaging system |
| CN114859467B (en) * | 2022-04-11 | 2023-02-17 | 上海交通大学 | Filter based on reverse binary blazed grating and manufacturing method |
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| CN102200667A (en) * | 2011-05-06 | 2011-09-28 | 中国科学院上海微系统与信息技术研究所 | Silicone tunable optical filter and making method thereof |
| CN102478686A (en) * | 2010-11-26 | 2012-05-30 | 中国科学院微电子研究所 | Grating coupler and coupling structure and packaging structure of grating coupler and optical fibers |
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| CN102478686A (en) * | 2010-11-26 | 2012-05-30 | 中国科学院微电子研究所 | Grating coupler and coupling structure and packaging structure of grating coupler and optical fibers |
| CN102486550A (en) * | 2010-12-06 | 2012-06-06 | 中国科学院微电子研究所 | Silicon-based composite medium spot size converter and manufacturing method thereof |
| CN102200667A (en) * | 2011-05-06 | 2011-09-28 | 中国科学院上海微系统与信息技术研究所 | Silicone tunable optical filter and making method thereof |
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