CN211348702U - Micro-ring integrated arrayed waveguide grating wavelength division multiplexer - Google Patents
Micro-ring integrated arrayed waveguide grating wavelength division multiplexer Download PDFInfo
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- 230000005540 biological transmission Effects 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000005253 cladding Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000002955 isolation Methods 0.000 claims abstract description 5
- 230000008878 coupling Effects 0.000 claims description 21
- 238000010168 coupling process Methods 0.000 claims description 21
- 238000005859 coupling reaction Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 10
- 238000001914 filtration Methods 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000008054 signal transmission Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 32
- 238000005530 etching Methods 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 239000002184 metal Substances 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 229910005883 NiSi Inorganic materials 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
The utility model relates to a micro-ring integrated array waveguide grating wavelength division multiplexer belongs to semiconductor optical signal transmission technical field. The micro-ring integrated arrayed waveguide grating wavelength division multiplexer comprises a silicon substrate, an isolation layer, a waveguide layer, an upper cladding layer, a heating electrode and an electrode lead from bottom to top, wherein the waveguide layer comprises an arrayed waveguide grating, a plurality of transmission waveguides and a plurality of micro-ring resonant filters, a plurality of output waveguides are arranged in the arrayed waveguide grating, each output waveguide is connected with one micro-ring resonant filter through one transmission waveguide, and the plurality of output waveguides in the arrayed waveguide grating are connected with the plurality of micro-ring resonant filters through the plurality of transmission waveguides to form the micro-ring integrated arrayed waveguide grating wavelength division multiplexer. The utility model discloses not only can carry out filtering once, little ring resonator filter through the AWG and carry out secondary filter and obtain excellent crosstalk characteristic, ensure simultaneously that the total loss of device is equivalent with single AWG.
Description
Technical Field
The utility model relates to a micro-ring integrated array waveguide grating wavelength division multiplexer belongs to semiconductor optical signal transmission technical field.
Background
The generation and development of optical fibers enables long-distance, high-capacity optical communications. The characteristics of low transmission loss, wide bandwidth, electromagnetic interference resistance, good transmission quality, good confidentiality and the like of optical communication are popular among people. The technology of computer and multimedia communication is improved, the information transmission quantity is increased day by day, and the development of the optical communication technology towards large capacity, long distance, wavelength division multiplexing, optical fiber technology, optical amplification and the like is promoted. Wavelength division multiplexers are key devices for wavelength division multiplexing technology, and are also key devices in optical fiber communication systems. The optical wavelength division multiplexer is a device for separating and synthesizing optical wavelength. The silicon photonic technology compatible with the CMOS technology is rapidly developed, and the silicon photonic device has the characteristics of small size and low power consumption, can be monolithically integrated with an IC device, and can realize large-scale production and multifunctional integration. The SOI material has excellent optical performance, is compatible with a COMS integrated circuit process, and can reduce the cost of a photonic integrated device, so that a silicon-on-insulator (SOI) COMS silicon photonic technology is a research hotspot in the field of optical fiber communication at present. Silicon and buried oxide layer SiO using SOI substrate as waveguide core layer2Up to 40% of the refractive index difference between, strong optical confinement can be achieved in the waveguide. Currently, there are 4 wavelength division multiplexers in silicon photonics: etched Diffraction Gratings (EDGs), micro-ring resonator filters (MRRs), cascaded MZIs, and Arrayed Waveguide Gratings (AWGs). The etched diffraction grating cannot realize dense wavelength division multiplexing, and the application range is limited to a certain extent; the micro-ring resonant filter realizes demultiplexing by utilizing resonant wavelength, needs to cascade micro-rings with different radiuses, is influenced by the process, is difficult to control stable wavelength interval, generally needs to thermally tune the micro-rings, and increases the power consumption; MZI realizes wavelength division multiplexing through arm length difference, and when the number of channels is more, along with the increase of the cascade frequency, the size of a chip can be multiplied, and the MZI is not suitable for demultiplexing with more channels. Therefore, three silicon photonic devices are not widely applied in the field of wavelength division multiplexing. Silicon photonic array waveguide lightThe grating is a wavelength division multiplexer/demultiplexer with optimal comprehensive performance, and has an important position in a plurality of Dense Wavelength Division Multiplexing (DWDM) systems and modules. Currently, commercial AWGs based on silica waveguides have implemented hundreds of channels with channel spacing up to 1 GHz. With the development of technology, the requirements of transmission rate and device power consumption are more and more strict, and although the silicon photonic device has high integration and small size, the performance of some key devices is limited. The crosstalk of the silicon optical AWG mainly comes from the fact that after the size of the device is extremely reduced, the response spectrum is greatly influenced by the width of the array waveguide, so that the crosstalk performance of the AWG device is poor, and the AWG device cannot be applied in a large scale.
Disclosure of Invention
To the problem that above-mentioned prior art exists and not enough, the utility model provides a micro-ring integrated array waveguide grating wavelength division multiplexer. The utility model discloses an realize secondary filter at the integrated micro-ring resonance filter of silicon light AWG output. Through the operation to wavelength tuning system, adjust micro-ring resonator filter's resonance wavelength, make resonance wavelength correspond the output wavelength unanimity rather than the silicon light AWG output channel who is connected to can further filter array waveguide grating output wavelength signal, realize the low characteristic of crosstalking, effectively solve the not good problem of silicon light AWG device crosstalk performance, the utility model discloses a following technical scheme realizes.
The utility model provides a micro-ring integrated array waveguide grating wavelength division multiplexer, from the supreme silicon substrate of including down, isolation layer, waveguide layer, upper cladding, heating electrode and electrode lead wire, the waveguide layer includes array waveguide grating 110, a plurality of transmission waveguide 120 and a plurality of micro-ring resonator filter 130, is equipped with a plurality of output waveguide 5 in the array waveguide grating 110, and every output waveguide 5 all connects a micro-ring resonator filter 130 through a transmission waveguide 120, and a plurality of output waveguide 5 loops through a plurality of transmission waveguide 120 and connects a plurality of micro-ring resonator filter 130 and constitute micro-ring integrated array waveguide grating wavelength division multiplexer in the array waveguide grating 110.
The arrayed waveguide grating 110 comprises an input waveguide 1, an input slab waveguide 2, an arrayed waveguide 3, an output slab waveguide 4 and an output waveguide 5, wherein the input waveguide 1 is connected with the input slab waveguide 2, the input slab waveguide 2 is connected with the output slab waveguide 4 through the arrayed waveguide 3, the input slab waveguide 2 and the output slab waveguide 4 are arranged in a Rowland circle structure, and the output slab waveguide 4 is connected with the output waveguide 5.
The number of the input waveguides 1 and the number of the output waveguides 5 are any positive integer, the number of the output waveguides 5 is any positive integer according to the wavelength division multiplexing requirement, and the number of the array waveguides 3 is determined by the structural design of the device.
The micro-ring resonator filter 130 comprises an input straight waveguide 131, a ring resonator 132, a wavelength tuning structure 11 and an output straight waveguide 133, wherein a first coupling region 10 is arranged between the input straight waveguide 131 and the ring resonator 132 positioned at the lower part of the input straight waveguide 131, and a second coupling region 12 is arranged between the output straight waveguide 133 and the ring resonator 132 positioned at the upper part of the output straight waveguide 133.
The free spectrometer area FSR of the micro-ring resonator filter 130 is larger than the adjacent channel spacing of the arrayed waveguide grating 110.
The resonance wavelength of each micro-ring resonator filter of the micro-ring resonator filter 130 must be the same as or close to the center wavelength of the optical signal output by the output waveguide 5 of the connected arrayed waveguide grating 110.
The input straight waveguide 131 of the micro-ring resonator filter 130 is divided into an input straight waveguide input end 6 and an input straight waveguide output end 7, and the output straight waveguide 133 is divided into an output straight waveguide download end 8 and an output straight waveguide upload end 9. Optical signals of different wavelengths are input from the input end 6 of the input straight waveguide 131, are coupled into the ring resonator 132 at the first coupling region 10, and when the optical signals are transmitted in the ring resonator 132, only the wavelengths meeting the resonance condition induce resonance in the ring and are coupled into the output straight waveguide 133 at the second coupling region 12 and are output from the down load end 8.
The wavelength tuning structure 11 of the micro-ring resonator filter 130 is a heater acting on the ring resonator 132 and connected to a driving power supply, is located on the waveguide layer and is formed by doping ions (Ni ions) (NiSi), or is located on the SiO of the waveguide2The upper cladding layer is made of a high-resistance material (TiN, TaN, or the like). The wavelength tuning structure 11 based on the thermo-optic/electro-optic effect can change the micro-ring resonance filter under the action of the driving power supplyThe resonance wavelength of the wave filter 130 is consistent with the wavelength of the output optical signal corresponding to the output channel of the arrayed waveguide grating 110, so that the secondary filtering of the signal is realized.
The working principle of the micro-ring integrated arrayed waveguide grating wavelength division multiplexer is as follows: based on the principle of the arrayed waveguide grating, a light signal containing a plurality of wavelengths enters the input slab waveguide 2 from the input waveguide 1 of the arrayed waveguide grating 110, is diffracted in the slab waveguide to enter the arrayed waveguide 3 in an equiphase coupling mode, because of the fixed length difference between the adjacent arrayed waveguides 3, light with different wavelengths is transmitted by the arrayed waveguide 3 and then is focused at different positions of the output slab waveguide 4, and wavelength signals with certain channel intervals (delta lambda) are output through each output port of the output waveguide 5, so that the first filtering is realized. Due to fabrication processes, etc., there is crosstalk between the actual adjacent channels. In order to reduce the crosstalk, the micro-ring resonator filter 130 is integrated at the output end of the arrayed waveguide grating, and the wavelength signal which is output by the arrayed waveguide grating 110AWG and acts with the ring resonator is output by the output straight waveguide lower load end 9 of the micro-ring resonator filter 130, so that secondary filtering is realized, and the purpose of reducing the crosstalk is achieved. To ensure the second filtering, the micro-ring resonance wavelength needs to be consistent with the wavelength of the output optical signal of the arrayed waveguide grating 110. The waveguide refractive index of the micro-ring resonator filter can be changed through the thermo-optic/electro-optic effect, so that the resonant wavelength is modulated, and the resonant wavelength of the micro-ring resonator filter is ensured to be consistent with the wavelength of the AWG output end. To ensure the feasibility of this solution, the Free Spectral Range (FSR) of the micro-ring resonator filter 130 needs to be designed to be larger than the channel spacing (Δ λ) of the output signal of the arrayed waveguide grating 10. Since the insertion loss of the microring resonator is extremely low, the total loss of the device is similar to that of a single AWG device, and the total loss of the device can be increased without significant increase in the result of achieving excellent low-crosstalk characteristics.
The process flow diagram of the micro-ring integrated arrayed waveguide grating wavelength division multiplexer is shown in fig. 4. The semiconductor SOI wafer is adopted, and based on a CMOS manufacturing process, the main integrated process flow is as follows.
The method comprises the following steps: as shown in fig. 4-1, the device is based on an SOI wafer. Forming structural patterns of the array waveguide grating, the transmission waveguide and the micro-ring resonant filter through photoetching and exposure; and then, a Si shallow etching process is used for forming a ridge waveguide preliminary structure of the arrayed waveguide grating, the transmission waveguide and the micro-ring resonant filter, as shown in figure 4-2.
Step two: and (3) preparing to obtain complete ridge-type and strip-type waveguide structures by adopting secondary photoetching, exposure and Si etching processes, and finishing the array waveguide grating, the micro-ring resonant filter and the transmission waveguide structure as shown in the figure 4-3.
Step three: cleaning, and depositing a layer of thick SiO on the silicon photoconductor by PECVD deposition method2Cladding by reversing SiO2Etching and polishing results in a flat upper surface as shown in fig. 4-4.
Step four: in SiO2Depositing TiN metal on the surface by PVD, forming a heating electrode by photoetching and dry etching, and depositing a layer of SiO on the TiN electrode by PECVD2As shown in fig. 4-5.
Step five: by photolithography, exposure and SiO2The etching process prepares a via hole above the heated TiN electrode, and the etching stops on the TiN metal to form a metal deposition hole, as shown in FIGS. 4-6.
Step six: finally, a metal lead material Al is deposited by PVD and a metal lead pattern is formed by photolithography/etching techniques, as shown in fig. 4-7.
Through the process, the micro-ring integrated arrayed waveguide grating wavelength division multiplexer can be prepared on the SOI wafer.
The utility model has the advantages that:
the silicon-based array waveguide grating and the micro-ring resonant filter used by the utility model have small volume, easy integration and simple and mature preparation process; only one micro-ring resonant filter and one wavelength tuning structure are added in the device, so that the introduced power consumption is low; meanwhile, the micro-ring resonator filter has extremely low insertion loss, not only can perform primary filtering through the AWG and perform secondary filtering through the micro-ring resonator filter to obtain excellent crosstalk characteristics, but also ensures that the total loss of the device is equivalent to that of a single AWG. The device has wide application in the wavelength division multiplexing field of optical communication.
Drawings
FIG. 1 is a schematic diagram of the micro-ring integrated arrayed waveguide grating wavelength division multiplexer of the present invention;
FIG. 2 is a schematic diagram of the structure of the arrayed waveguide grating of the present invention;
FIG. 3 is a schematic structural diagram of the micro-ring resonator filter of the present invention;
FIG. 4 is a flow chart of the processing of the waveguide upper cladding heating electrode of the micro-ring resonator filter of the present invention;
fig. 5 is a process flow chart of the heating electrode of the waveguide layer of the micro-ring resonator filter of the present invention.
In the figure: 1-input waveguide, 2-input slab waveguide, 3-array waveguide, 4-output slab waveguide, 5-output waveguide, 6-input straight waveguide input end, 7-input straight waveguide output end, 8-output straight waveguide down load end, 9-output straight waveguide up load end, 10-first coupling region, 11-wavelength tuning structure, 12-second coupling region, 110-array waveguide grating, 120-transmission waveguide, 130-micro ring resonance filter, 131-input straight waveguide, 132-ring resonator, 133-output straight waveguide.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the following detailed description.
Example 1
As shown in FIGS. 1 to 3, the micro-ring integrated arrayed waveguide grating multiplexer is based on an SOI wafer and comprises a substrate layer, a buried oxide layer, a waveguide layer and SiO from top to bottom2And an upper cladding layer having waveguide layers respectively having an arrayed waveguide grating 110 (AWG), a transmission waveguide 120, and a micro-ring resonator filter 130 (MRR), the arrayed waveguide grating 110 being connected to the micro-ring resonator filter 130 through the transmission waveguide 120.
The arrayed waveguide grating 110 comprises an input waveguide 1, an input slab waveguide 2, an arrayed waveguide 3, an output slab waveguide 4 and an output waveguide 5, wherein the input waveguide 1 is connected with the input slab waveguide 2, the input slab waveguide 2 is connected with the output slab waveguide 4 through the arrayed waveguide 3, and the input slab waveguide 2 and the output slab waveguide 4 are arranged in RowlandThe circular structure, the output slab waveguide 4 is connected with the output waveguide 5. A beam of light signals containing different wavelengths enters an input slab waveguide 2 from an input waveguide 1 to be diffracted, the light with different wavelengths is focused at different positions of an output slab waveguide 4 through an array waveguide 3, and finally, the light signals are output through an output waveguide 5 to realize the first filtering of the signals; the micro-ring resonator filter 130 comprises an input straight waveguide 131, a ring-shaped resonant cavity 132, a wavelength tuning structure 11 and an output straight waveguide 133, wherein a first coupling region 10 exists between the input straight waveguide 131 and the ring-shaped resonant cavity 132, a second coupling region 12 exists between the ring-shaped resonant cavity 132 and the output straight waveguide 133, the input straight waveguide 131 is divided into an input straight waveguide input end 6 and an input straight waveguide output end 7, and the output straight waveguide 133 is divided into a downloading end 8 and an uploading end 9. The optical signal transmitted through the transmission waveguide 120 is input from the input end 6 of the input straight waveguide 131, coupled into the ring resonator 132 in the first coupling region 10, resonated in the ring by the wavelength satisfying the resonance condition, coupled into the output straight waveguide 133 in the second coupling region 12, and output from the drop terminal 8, thereby realizing the secondary filtering of the sub-wave signal. The wavelength tuning structure 11 based on the thermo-optic effect can match the resonant wavelength of the micro-ring resonator filter 130 with the wavelength of the signal of the corresponding output channel of the AWG under the action of the driving power supply. In this example, since the channel spacing of the AWG is fixed, the design of the micro-ring resonator filters is identical, and the wavelength tuning structure ensures that the resonance wavelength of each micro-ring resonator filter is consistent with the center wavelength of the output signal of the AWG output channel, and the free spectral range is larger than the channel spacing of the AWG output signal. The wavelength tuning structure has heating electrode in SiO of waveguide2The upper cladding layer is made of high-resistance material TiN.
The arrayed waveguide grating 110, the transmission waveguide 120, and the micro-ring resonator filter 130 are all on the same top-level silicon of the SOI wafer. The size of the SOI wafer is 8 inches, the thickness of the wafer is 725 mu m, the thickness of the buried oxide layer is 2 mu m, and the thickness of the top silicon layer is 220 nm. The array waveguide 3 of the array waveguide grating 110 is a ridge waveguide with the width of 450nm and the etching depth of 100nm, the length difference of the array waveguide 3 is 12.95 mu m, the radius of a Rowland circle is 89.3 mu m, the minimum complete radius is 50 mu m, the number of diffraction orders is 20, and the channel interval is 6.4 nm. The transmission waveguide 120 is a ridge waveguide having a width of 450nm and a height of 200 nm.The input waveguide 131/the output waveguide 133 of the micro-ring resonant filter 130 are strip waveguides with the width of 450nm, the ring-shaped resonant cavity 132 and the coupling regions (the first coupling region 10 and the second coupling region 12) are ridge waveguides with the width of 450nm and the etching depth of 100nm, the minimum distance between the input/output waveguide and the ring-shaped resonant cavity is 200nm, the diameter of the ring-shaped resonant cavity is 23 mu m, and the free spectral range FSR is 6.8 nm. Through photoetching/etching semiconductor technology many times on SOI wafer, make the utility model discloses the waveguide structure of device, after the waveguide forms, through the thick SiO of PECVD technology deposit 1.5 mu m2An upper cladding layer, and a flat and smooth surface is obtained by a reverse etching and polishing process (shown in fig. 4-1 to 4-4); depositing a layer of high-resistance material TiN with the thickness of 110nm on the smooth surface by a PVD (physical vapor deposition) technology, forming a TiN heating electrode (shown in figures 4-5) through photoetching/etching, wherein the TiN heating electrode is a reentrant distribution structure with the width of 5 mu m and the total length of 200 mu m, and depositing SiO with the thickness of 450nm on the TiN electrode material by adopting a PECVD (plasma enhanced chemical vapor deposition) process2An isolation layer; forming a heating electrode lead hole (shown in figures 4-6) above the TiN electrode by a photoetching/etching technology, wherein the lead hole etching stops on the TiN heating electrode; and finally, depositing a 2-mum metal lead material Al by adopting a PVD (physical vapor deposition) technology, connecting the Al material with a TiN heating electrode, and forming an Al metal lead (shown in figures 4-7) with the width of 10 μm by adopting a photoetching/etching technology, wherein the terminal structure of the Al metal lead and the detection contact is a square with the side length of 70 μm.
Example 2
As shown in FIGS. 1 to 3, the micro-ring integrated arrayed waveguide grating multiplexer is based on an SOI wafer and comprises a substrate layer, a buried oxide layer, a waveguide layer and SiO from bottom to top2And an upper cladding layer having waveguide layers respectively having an arrayed waveguide grating 110 (AWG), a transmission waveguide 120, and a micro-ring resonator filter 130 (MRR), the arrayed waveguide grating 110 being connected to the micro-ring resonator filter 130 through the transmission waveguide 120.
The arrayed waveguide grating 110 includes an input waveguide 1, an input slab waveguide 2, an arrayed waveguide 3, an output slab waveguide 4, and an output waveguide 5, the input waveguide 1 is connected to the input slab waveguide 2, the input slab waveguide 2 is connected to the output slab waveguide 4 through the arrayed waveguide 3, the input slab waveguide 2 and the output slab waveguide 4 are arranged in a rowland circle structure, and the output slab waveguide 4 is connected to the output waveguide 5. A beam of light signals containing different wavelengths enters an input slab waveguide 2 from an input waveguide 1 to be diffracted, the light with different wavelengths is focused at different positions of an output slab waveguide 4 through an array waveguide 3, and finally, the light signals are output through an output waveguide 5 to realize the first filtering of the signals; the micro-ring resonator filter 130 comprises an input straight waveguide 131, a ring resonator 132, an output straight waveguide 133 and a wavelength tuning structure 11, wherein a first coupling region 10 exists between the input straight waveguide 131 and the ring resonator 132, a second coupling region 12 exists between the ring resonator 132 and the output straight waveguide 133, the input straight waveguide 131 is divided into an input straight waveguide input end 6 and an input straight waveguide output end 7, and the output straight waveguide 133 is divided into a downloading end 8 and an uploading end 9. The optical signal transmitted through the transmission waveguide 120 is input from the input end 6 of the input straight waveguide 131, coupled into the ring resonator 132 in the first coupling region 10, resonated in the ring by the wavelength satisfying the resonance condition, coupled into the output straight waveguide 133 in the second coupling region 12, and output from the drop terminal 8, thereby realizing the secondary filtering of the sub-wave signal. The wavelength tuning structure 11 based on the thermo-optic effect can match the resonant wavelength of the micro-ring resonator filter 130 with the wavelength of any output channel signal of the AWG under the action of the driving power supply. In this example, since the channel spacing of the AWG is fixed, the design of each micro-ring resonator filter is completely the same, and the wavelength tuning structure ensures that the resonant wavelength of each device is consistent with the output wavelength of the AWG, and the free spectral range is largely spaced from the channel spacing of the AWG. The wavelength tuning structure heating electrode is located on the waveguide Si layer and is formed by Ni ion doping (NiSi).
The low crosstalk wavelength division multiplexer is based on an SOI wafer, and the arrayed waveguide grating 110 (AWG), the transmission waveguide 120, and the micro-ring resonator filter 130 (MRR) are all on the same top-layer silicon of the SOI wafer. The size of the SOI wafer is 8 inches, the thickness of the wafer is 725 mu m, the thickness of the buried oxide layer is 2 mu m, and the thickness of the top silicon layer is 220 nm. The arrayed waveguide grating is composed of ridge waveguides with the arrayed waveguide width of 400nm and the etching depth of 110nm, the arrayed waveguide length difference is 7.243 mu m, the rowland circle radius is 268.76 mu m, the minimum complete radius is 75 mu m, the diffraction order is 8, and the channel interval is 6.8 nm. Transmission waveguide width 400nm and height 220nmA ridge waveguide. The input/output waveguides of the micro-ring resonator filter are ridge waveguides with the width of 450 nm. The resonant cavity and the coupling area of the micro-ring resonant filter are ridge waveguides with the width of 450nm and the etching depth of 110nm, the minimum distance between the input/output waveguides and the micro-ring resonant cavity waveguides is 150nm, the diameter of the micro-ring resonant cavity is 31.25 mu m, and the free spectral range FSR is 6.4 nm. The device process is as shown in fig. 5, and the complete ridge waveguide structure of the device of the present invention (shown in fig. 5-1 to fig. 5-2) is formed on the SOI wafer by two times of photoetching/etching semiconductor processes; after waveguide formation, a 300nm thick SiO layer was deposited by PECVD process2A layer and a flat and smooth surface is obtained by a reverse etching and polishing process (shown in fig. 5-3); opening a window on the slab waveguide of the ring resonator according to the pattern of the NiSi heater and depositing 20nm Ni by exposure, photolithography, cleaning and deposition processes, annealing at 280 deg.C for 200s, and annealing with H2SO4Washing away the unreacted Ni to form a NiSi heating electrode on the waveguide layer (shown in FIGS. 5-4 to 5-5); depositing a 10-mu m metal lead material Al on the NiSi electrode by adopting a PVD (physical vapor deposition) technology, connecting the Al material with the NiSi heating electrode, forming an Al metal lead with the width of 20 mu m by adopting a photoetching/etching technology, and forming a terminal structure of the Al metal lead and the detection contact into a square with the side length of 70 mu m (shown in figures 5-6); finally, the thermal isolation hollow-out structure is formed by photoetching and etching technology (shown in fig. 5-7).
The present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit and scope of the present invention by those skilled in the art.
Claims (8)
1. The utility model provides an integrated array waveguide grating wavelength division multiplexer of microring, from supreme silicon substrate, isolation layer, waveguide layer, upper cladding, heating electrode and the electrode lead of including down which characterized in that: the waveguide layer comprises an arrayed waveguide grating (110), a plurality of transmission waveguides (120) and a plurality of micro-ring resonant filters (130), a plurality of output waveguides (5) are arranged in the arrayed waveguide grating (110), each output waveguide (5) is connected with one micro-ring resonant filter (130) through one transmission waveguide (120), and the plurality of output waveguides (5) in the arrayed waveguide grating (110) are connected with the plurality of micro-ring resonant filters (130) through the plurality of transmission waveguides (120) in sequence to form the micro-ring integrated arrayed waveguide grating wavelength division multiplexer.
2. The micro-ring integrated arrayed waveguide grating multiplexer of claim 1, wherein: the arrayed waveguide grating (110) comprises an input waveguide (1), an arrayed waveguide (3) and an output waveguide (5), the input waveguide (1) comprises an input flat waveguide (2), the output waveguide (5) comprises an output flat waveguide (4), the input waveguide (1) is connected with the input flat waveguide (2), the input flat waveguide (2) is connected with the output flat waveguide (4) through the arrayed waveguide (3), the input flat waveguide (2) and the output flat waveguide (4) are arranged into a Rowland circle structure, and the output flat waveguide (4) is connected with the output waveguide (5).
3. The micro-ring integrated arrayed waveguide grating multiplexer of claim 2, wherein: the number of the input waveguides (1) and the number of the output waveguides (5) are any positive integer.
4. The micro-ring integrated arrayed waveguide grating multiplexer of claim 1, wherein: the micro-ring resonant filter (130) comprises an input straight waveguide (131), a ring-shaped resonant cavity (132), a wavelength tuning structure (11) and an output straight waveguide (133), wherein a first coupling area (10) is arranged between the input straight waveguide (131) and the ring-shaped resonant cavity (132) positioned at the lower part of the input straight waveguide (131), and a second coupling area (12) is arranged between the output straight waveguide (133) and the ring-shaped resonant cavity (132) positioned at the upper part of the output straight waveguide (133).
5. The micro-ring integrated arrayed waveguide grating multiplexer of claim 4, wherein: the free spectrometer area FSR of the micro-ring resonator filter (130) is larger than the adjacent channel spacing of the arrayed waveguide grating (110).
6. The micro-ring integrated arrayed waveguide grating multiplexer of claim 4, wherein: the resonance wavelength of each micro-ring resonance filter of the micro-ring resonance filter (130) is required to be the same as or close to the central wavelength of the optical signal output by the output waveguide (5) of the connected arrayed waveguide grating (110).
7. The micro-ring integrated arrayed waveguide grating multiplexer of claim 4, wherein: an input straight waveguide (131) of the micro-ring resonant filter (130) is divided into an input straight waveguide input end (6) and an input straight waveguide output end (7), and an output straight waveguide (133) is divided into an output straight waveguide download end (8) and an output straight waveguide upload end (9).
8. The micro-ring integrated arrayed waveguide grating multiplexer of claim 4, wherein: the wavelength tuning structure (11) of the micro-ring resonator filter (130) is a heater which acts on the ring resonator (132) and is connected with a driving power supply, is positioned on the waveguide layer and is formed by ion doping, or is positioned on SiO of the waveguide2The upper cladding layer is made of a high-resistance material.
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