CN101859001B - Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof - Google Patents
Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof Download PDFInfo
- Publication number
- CN101859001B CN101859001B CN2010101959436A CN201010195943A CN101859001B CN 101859001 B CN101859001 B CN 101859001B CN 2010101959436 A CN2010101959436 A CN 2010101959436A CN 201010195943 A CN201010195943 A CN 201010195943A CN 101859001 B CN101859001 B CN 101859001B
- Authority
- CN
- China
- Prior art keywords
- silicon dioxide
- waveguide
- codoped
- upper cladding
- top covering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 72
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 56
- 230000003287 optical effect Effects 0.000 title claims abstract description 36
- 238000005253 cladding Methods 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 55
- 230000008021 deposition Effects 0.000 claims description 35
- 239000012792 core layer Substances 0.000 claims description 30
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 17
- 238000000137 annealing Methods 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 4
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 abstract 1
- 238000010992 reflux Methods 0.000 abstract 1
- 238000004062 sedimentation Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 33
- 238000005516 engineering process Methods 0.000 description 19
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- VTYDSHHBXXPBBQ-UHFFFAOYSA-N boron germanium Chemical compound [B].[Ge] VTYDSHHBXXPBBQ-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910000078 germane Inorganic materials 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- -1 germanium ion Chemical class 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 210000001161 mammalian embryo Anatomy 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000018984 mastication Effects 0.000 description 1
- 238000010077 mastication Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a silicon dioxide optical waveguide device based on a B-Ge-codoped upper cladding and a preparation method thereof. The preparation method comprises the following steps of: sedimentating a silicon dioxide lower cladding on a substrate, sedimentating a Ge-doped silicon dioxide film on the upper surface of the lower cladding, forming waveguide sandwich layers with a square cross section by lithography and etching processes; sedimentating a B-Ge-codoped silicon dioxide upper cladding on the silicon dioxide lower cladding and the waveguide sandwich layers without forming a gap between the upper cladding and the waveguide structure of the sandwich layer; and carrying out a high-temperature thermal-annealing process on the sedimented B-Ge-codoped silicon dioxide upper cladding and refluxing the upper cladding film with a low melting point into a gap between adjacent waveguide sandwich layers so that the shadowing effect action is lessened in a subsequent sedimentation film layer to fully fill the inter-waveguide gap and lessen the device loss. The silicon dioxide waveguide device structure based on the B-Ge-codoped upper cladding can be widely applied to devices in a waveguide structure with a high aspect ratio, such as splitters, couplers, array waveguide gratings, and the like.
Description
Technical field
The present invention relates to a kind of planar optical waveguide device, especially relate to a kind of silicon dioxide optical waveguide device and preparation method based on B-Ge-codoped upper cladding.
Background technology
At electronic technology field, the history that discrete device develops into integrated circuit has changed the electronic industry production model.Equally, at optical technical field, at present all kinds of optical elements of single form move towards the road of following integrated optics, also with the present situation of the current traditional optical technology of big about-face, the exploitation of military and civilian infosystem are exerted far reaching influence.As the notion of IC chip, planar optical waveguide (Planar Lightwave Circuits is called for short PLCs) is exactly to utilize and conventional semiconductor processing (Complementary Metal OxideSemiconductor; Be called for short CMOS) compatible technology of preparing, optical module is incorporated on the wafer (wafer), help integrated, the reduced volume of optical communication assembly; And can reduce the encapsulation number of times, this make planar optical waveguide device with such as lens, prism; Traditional discrete optical device such as film filter is compared, and has large-scale production, not only has low-cost potentiality; High stability; High integration, abilities such as device integration are the core parts of forming various integrated optical devices.
So-called planar optical waveguide that is to say that optical waveguide is positioned at a plane.Modal PLC shunt is made of silicon dioxide (SiO2).Device based on the planar optical waveguide technical solution comprises: shunt (Splitter), star-type coupler (Star coupler), adjustable optical attenuator (Variable Optical Attenuator; VOA), photoswitch (Optical switch), light comb (Interleaver) and array waveguide grating (ArrayWaveguide Grating, AWG) etc.The performance of these devices depends critically upon the semiconductor fabrication process level.
Be example with the SiO 2 waveguide respectively below, introduce planar optical waveguide technology, whole technology was divided into for eight steps:
1) adopt flame hydrolysis (Flame Hydrolysis Deposition is called for short FHD) or chemical vapor deposition method (Chemical Vapor Deposition is called for short CVD), growth one deck SiO2 on silicon chip is as the waveguide under-clad layer;
2) adopt FHD or CVD technology, regrowth one deck SiO2 on under-clad layer, as waveguide core layer, doped germanium ion wherein, the refringence of acquisitions needs;
3), make the two-layer SiO2 of front growth become evenly fine and close through the annealing hardening process;
4) carry out photoetching, the waveguide figure of needs is protected with photoresist;
5) adopt reactive ion etching (Reactive Ion Etching is called for short RIE) or inductively coupled plasma etching (Inductively Coupled Plasma is called for short ICP), non-waveguide region is etched away, form waveguide core layer, as shown in Figure 1;
6) remove photoresist, adopt FHD or CVD technology, on waveguide core layer, cover one deck SiO2 again, as the waveguide top covering, as shown in Figure 2;
7), make top covering SiO2 become evenly fine and close through the annealing hardening process;
8) cleavage goes out a plurality of planar optical waveguide device chips from the silicon chip wafer, then according to each self-application encapsulation.
Several Key Points in the silicon dioxide planar optical waveguide technology:
1) etching technics will obtain steep and smooth waveguide sidewalls, to reduce the scattering loss of waveguide;
2) material growth and annealing hardening process will make the thickness of every layer material and refractive index is even and accurately, to reach the waveguiding structure parameter of design, reduce the residual stress of material internal as far as possible, to reduce the birefringence effect of waveguide;
3) covering covering process is wanted the interval between the complete filling waveguide core layer.It is exactly the space filling between waveguide core layer that well-known AWG makes difficulty.
The 3rd critical technological point mentioned above, particularly important for the waveguiding structure of high aspect ratio, like array waveguide grating, optical branching device etc., otherwise the existence in space can increase the scattering loss of these waveguide devices and influence phase information.Below this problem will be described.Fig. 1 is the core structure schematic cross-section of the planar optical waveguide device of high aspect ratio, the 1st, and silicon dioxide under-clad layer, 2 expression waveguide core layer (like 16 passage AWG).Fig. 2 has described the complete structure of planar optical waveguide device, and waveguide core layer 2 is covered by silicon dioxide top covering 3, has shown that also top covering deposits existing problem, and still there are cavity 4 formation between waveguide in the space between sandwich layer by partially filled.When deposition of silica waveguide top covering,, pendle (overhangs) can occur and strengthen the space that capture-effect (shadowing effect) can't be filled top covering sealing ahead of time and generation if the waveguide spacing is less.Waveguide array like array waveguide grating is merely 1-2 μ m with the waveguide spacing of importing the waveguide zone intersection, the existence in cavity 4 can greatly influence each item performance, particularly loss of AWG between waveguide this moment.And for the waveguiding structure of high aspect ratio, aspect ratio at interval is big more, and it is more difficult that fill in the space.
People such as GC Schwartz at " Gap-Fill with PECVD SiO2 Using Deposition/SputterEtch Cycles; " Journal of the Electrochemical Society; Vol.139, no.3, pp.927-932; A solution is proposed, through periodically deposition and argon gas ise realize that the PECVD deposition causes the filling in space in 1992.The top covering material that elder generation's deposition rate is thin, the argon gas physical etchings is carved the nearly sealing covering on top, gap again, and then the claddingmode of deposition of thin, avoids the cavity to form so repeatedly, reaches suitable thickness up to top covering.But a large amount of deposition/etch cycles has increased complicacy and Production Time that the preparation worker is equipped with, reduced productive capacity, and the density of sandwich layer interval region is lower.
Another kind of more rare method is that people such as Japanese S.Kashimura puts forward; Like " Lossreduction of GeO2-doped silica waveguide with high refractive index difference byhigh-temperature annealing, " Jpn.J.Appl.Phys., vol.39; Pp.521-523; Described in 2000, after the sandwich layer etching is removed photoresist, use hot mastication sandwich layer near 1400 ℃; Make original square sandwich layer waveguide become circular arc, help next step top covering deposition like this.Though this method has been avoided empty generation, the space that must fill between waveguide in full force and effect is because the change of core structure has reduced the optical property of waveguide.
At present, a kind of solution commonly used both at home and abroad be to use the top covering of boron-doping and phosphorus (Boro-phospho-silicate Glass, BPSG).The fusing point of doping back top covering is lower than sandwich layer and under-clad layer, therefore can pass through high-temperature thermal annealing, makes approximate liquid top covering backflow fill the space.But this method is extra has used a kind of hypertoxic gas phosphine, and the phosphorus ratio is easier to make moist, and this has increased the danger of technology and the instability of product.
Summary of the invention
To disadvantages of background technology; The object of the present invention is to provide a kind of silicon dioxide optical waveguide device and preparation method based on B-Ge-codoped upper cladding; Top covering is realized the filling in the high aspect ratio space between adjacent sandwich layer waveguide through doped with boron germanium, satisfies the requirement with the waveguide core layer refringence simultaneously.
The present invention realizes through following technical scheme:
One, a kind of silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding:
Deposition of silica under-clad layer in substrate, behind the silica membrane of under-clad layer upper surface dopant deposition germanium, forming the cross section through photoetching, etching technics is square waveguide core layer; It is characterized in that: deposit the silicon dioxide top covering that one deck is mixed with boron and two kinds of elements of germanium at the silicon dioxide under-clad layer and above the waveguide core layer, do not have the space between top covering and the sandwich layer waveguiding structure.
Described deposition is mixed with the silicon dioxide top covering of boron and two kinds of elements of germanium, and is consistent with silicon dioxide under-clad layer refractive index, and silicon dioxide top covering fusing point and refractive index all are lower than waveguide core layer.
Two, a kind of preparation method of the silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding:
Deposition of silica under-clad layer in substrate forms waveguide core layer through photoetching, etching technics behind dopant deposition SiO 2 waveguide sandwich layer on the under-clad layer;
(1) forms the layer of silicon dioxide top covering that covers the waveguide core layer structure through doped with boron germanium deposition;
(2) carrying out 900 ℃ of-1100 ℃ of high-temperature thermal annealings of nitrogen or oxygen or ar gas environment handles.Heating-up time is 15-30 minute, constant temperature 15-30 minute, and cooling naturally in annealing furnace then, pendle is softening to be flowed into the position, interval of adjacent sandwich layer and forms domatic;
(3) carry out above repeatedly B-Ge-codoped silica membrane deposition and high-temperature thermal annealing cycle of treatment, reach the complete filling in space between adjacent waveguide afterwards and satisfy the cladding thickness 12-15 μ m that optics requires.
Said silicon dioxide top covering passes through plasma enhanced chemical vapor deposition.
Said silicon dioxide top covering deposition gases comprises B
2H
6, GeH
4, SiH
4, N
2O, wherein B
2H
6: SiH
4Flow proportional was greater than 1: 2.
The present invention compares with background technology, and the beneficial effect that has is:
1, eliminates the existence in space, reduced the scattering loss of waveguide device.
Since the common method of 2 deposition waveguide core tunics all is to use germane silane laughing gas etc.; With the Ge-doped refractive index that improves sandwich layer; So than BPSG, the use of extra hypertoxic gas phosphine has been avoided in the preparation of structure of the present invention, has reduced the technology cost and has also improved stability.
3, compare with the method for GC Schwartz, the preparation of structure of the present invention has reduced the complexity of technology respectively, has improved the stability of technology.And the method that proposes with respect to S.Kashimura, the present invention can not influence the performance of waveguide core layer own, so there is not spinoff.
4, boron germanium---the photoactive substance because top covering has mixed is so have potential advantages such as the photosensitivity of enhancing based on the Bragg grating device of structure of the present invention.
SiO 2 waveguide device architecture based on B-Ge-codoped upper cladding of the present invention; Have low cost, high-performance and multi-functional characteristics; Very big application prospect is arranged in fields such as planar optical waveguides; As can be widely used in shunt (Splitter), coupling mechanism (Coupler) and array waveguide grating (Array Waveguide Grating, AWG) device of waveguiding structure such as high aspect ratio such as grade.
Description of drawings
Fig. 1 is the structural section synoptic diagram of waveguide core layer after the etching in the background technology.
Fig. 2 is the waveguiding structure schematic cross-section that there is the cavity in top covering in the background technology.
Fig. 3 is the waveguiding structure schematic cross-section behind the B-Ge-codoped silica membrane of embryo deposit of the present invention.
Fig. 4 is the waveguiding structure schematic cross-section of waveguiding structure after high-temperature thermal annealing is handled behind the B-Ge-codoped silica membrane of embryo deposit of the present invention.
Fig. 5 is that the silicon dioxide optical waveguide device that the present invention is based on B-Ge-codoped upper cladding is realized the structural section synoptic diagram that fill in adjacent sandwich layer waveguide gap.
Among the figure: 1, silicon dioxide under-clad layer, 2, waveguide core layer, 3, the silicon dioxide top covering, 4, cavity between waveguide, 5, pendle (overhangs), 6, domatic (angled surfaces).
Embodiment
As shown in Figure 5, the present invention is deposition of silica under-clad layer 1 in substrate, and behind the silica membrane of under-clad layer 1 upper surface dopant deposition germanium, forming the cross section through photoetching, etching technics is square waveguide core layer 2; Deposit the silicon dioxide top covering 3 that one deck is mixed with boron and two kinds of elements of germanium at silicon dioxide under-clad layer 1 and above the waveguide core layer 2, do not have the space between top covering 3 and sandwich layer waveguide 2 structures.
Described deposition is mixed with the silicon dioxide top covering 3 of boron and two kinds of elements of germanium, and is consistent with silicon dioxide under-clad layer 1 refractive index, and silicon dioxide top covering 3 fusing points and refractive index all are lower than waveguide core layer 2.
The invention describes a kind of silicon dioxide optical waveguide device structure,, realize that the gap between the protruding sandwich layer of adjacent waveguide is filled, avoid the cavity to form through depositing B-Ge-codoped top covering and high-temperature thermal annealing based on B-Ge-codoped upper cladding.
According to accompanying drawing, specify the present invention below, Fig. 1, Fig. 3, Fig. 4, Fig. 5 are the present invention is prepared as example with PECVD embodiments.
Waveguide core layer structural section synoptic diagram for etching formation shown in Figure 1.At first using plasma strengthens chemical vapor deposition method (PECVD), and cvd silicon dioxide film in substrate is as silicon dioxide under-clad layer 1; And then the employing pecvd process, dopant deposition silica membrane on under-clad layer, as waveguide core layer, doped germanium ion wherein, the refringence that acquisition needs; Carry out technologies such as photoetching, etching again and form waveguide core layer 2.Wherein the waveguide sidewalls requirement is steep and smooth, otherwise will cause the scattering loss of waveguide, reduces waveguide Transmission Characteristics.
Remove residual photoresist in the waveguide then; If directly adopt the thick pure silicon dioxide top covering 3 of the about 9-15 μ of pecvd process deposition one deck m to cover waveguide core layer 2; As shown in Figure 2, be positioned at so the top covering material at the interval of adjacent waveguide sandwich layer 2 can be because capture-effect occurs that the top covering pendle seals in advance lower floor can't fill and occur between waveguide empty 4.Especially for the waveguiding structure of high aspect ratio, adjacent waveguide is less at interval, and sandwich layer height of projection condition with higher, then the space is filled more difficult.For example; The Waveguide array of array waveguide grating generally is merely 1-2 μ m with the waveguide spacing of input waveguide zone intersection; And the waveguide core layer height is generally 6 μ m; Be that aspect ratio is 3-6 (belonging to high aspect ratio), the existence in cavity can greatly influence each item performance, particularly loss of AWG between waveguide this moment.
So cover existing the problems referred to above in order to improve the silicon dioxide top covering, the present invention proposes a kind of silicon dioxide optical waveguide device structure based on B-Ge-codoped upper cladding.
As shown in Figure 3, deposition of silica under-clad layer 1 in substrate; Behind dopant deposition SiO 2 waveguide sandwich layer on the under-clad layer, form sandwich layer waveguiding structure 2 through technologies such as photoetching, etchings; Form the layer of silicon dioxide top covering 3 (GeBSG) that covers the waveguide core layer structure through doped with boron germanium deposition, described B-Ge-codoped silicon dioxide top covering 3 to satisfy fusing point be lower than sandwich layer and with the requirement of sandwich layer refringence.
Adjustment deposition gases ratio; Can change the refractive index and the fusing point of this synthetic glass; But the boron that mixes, the capability of influence of germanium refractive index are different, and difference is so not big basically to the capability of influence of material melting point, so adopt heavily doped boron element to reduce fusing point; Suitably the doped germanium element just can have been adjusted refractive index then; Germane, silane, nitrous oxide gas flow are respectively 3sccm, 17sccm, 2000sccm when wherein depositing waveguide core layer 2, and germane, borine, silane, nitrous oxide gas flow are respectively 0.6sccm, 7.5sccm, 10sccm, 2000sccm during deposition of silica top covering 3, and its suitable thickness is approximately 3 μ m.Because top covering pendle 5 can appear in capture-effect.
Afterwards, carrying out 900 ℃ of-1100 ℃ of high-temperature thermal annealings of other gaseous environments such as nitrogen or oxygen handles.Heating-up time is 15-30 minute, constant temperature 15-30 minute, and cooling naturally in annealing furnace then.The result is as shown in Figure 4, and the position, interval of the adjacent sandwich layer of pendle 5 softening inflows among original Fig. 3 also forms domatic 6 among Fig. 4.The influence that so just alleviates capture-effect for next step covering deposition, thus can better fill the space between waveguide.Annealing can influence the under-clad layer and the sandwich layer of waveguide simultaneously, causes their variations in refractive index, so when under-clad layer, sandwich layer deposition, just must consider the two variations in refractive index after annealing.Often need carry out repeatedly the B-Ge-codoped silica membrane deposition of round-robin and handle, just can reach the complete filling in space between adjacent waveguide and satisfy the cladding thickness 12-15 μ m that optics requires with high-temperature thermal annealing, as shown in Figure 5.
The embodiment of the B-Ge-codoped SiO 2 waveguide device architecture of describing according to the present invention; Top covering has been realized the filling in the high aspect ratio space between adjacent sandwich layer waveguide through doped with boron germanium; The spacing of waveguide core layer is less than 2 microns, and the gap aspect ratio of adjacent sandwich layer is greater than 3.Therefore a kind of silicon dioxide optical waveguide device structure based on B-Ge-codoped upper cladding of the present invention's proposition is applicable to array waveguide grating (AWG) and shunt devices such as (Splitter) fully.
The foregoing description is used for the present invention that explains, rather than limits the invention, and in the protection domain of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (1)
1. silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding, deposition of silica under-clad layer in substrate, behind the silica membrane of under-clad layer upper surface dopant deposition germanium, forming the cross section through photoetching, etching technics is square waveguide core layer; Deposit the silicon dioxide top covering that one deck is mixed with boron and two kinds of elements of germanium at the silicon dioxide under-clad layer and above the waveguide core layer, do not have the space between top covering and the sandwich layer waveguiding structure; It is characterized in that:
Described deposition is mixed with the silicon dioxide top covering of boron and two kinds of elements of germanium, and is consistent with silicon dioxide under-clad layer refractive index, and silicon dioxide top covering fusing point and refractive index all are lower than waveguide core layer;
Said silicon dioxide top covering deposition gases throughput ratio is B
2H
6: GeH
4: SiH
4: N
2O=6-8: 0.6: 10: 2000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101959436A CN101859001B (en) | 2010-06-08 | 2010-06-08 | Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101959436A CN101859001B (en) | 2010-06-08 | 2010-06-08 | Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101859001A CN101859001A (en) | 2010-10-13 |
| CN101859001B true CN101859001B (en) | 2012-06-27 |
Family
ID=42945008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101959436A Expired - Fee Related CN101859001B (en) | 2010-06-08 | 2010-06-08 | Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101859001B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102109639A (en) * | 2010-11-19 | 2011-06-29 | 杭州天野通信设备有限公司 | Preparation method of chip based on planar light-wave circuit (PLC) splitter |
| KR20140027917A (en) * | 2011-03-25 | 2014-03-07 | 이서영 | Lightwave circuit and method for manufacturing same |
| CN102736177A (en) * | 2012-06-29 | 2012-10-17 | 无锡思力康光子科技有限公司 | Array waveguide grating structure based on PLC (programmable logic controller) technique and manufacturing method thereof |
| CN104360441A (en) * | 2014-10-30 | 2015-02-18 | 成都康特电子高新科技有限责任公司 | Silicon-dioxide optical waveguide production process for manufacturing optical divider |
| CN104635298B (en) * | 2015-02-11 | 2017-11-10 | 深圳太辰光通信股份有限公司 | A kind of planar optical waveguide and preparation method thereof |
| CN105759352B (en) * | 2015-07-03 | 2019-09-24 | 苏州峰通光电有限公司 | Hot non-sensitive type planar optical waveguide and preparation method thereof |
| CN110286440B (en) * | 2019-05-20 | 2021-06-11 | 武汉光迅科技股份有限公司 | Method for manufacturing planar optical waveguide chip |
| CN111208606A (en) * | 2020-01-13 | 2020-05-29 | 中国科学院微电子研究所 | Optical waveguide and manufacturing method thereof |
| CN111983750B (en) * | 2020-08-28 | 2022-08-19 | 济南晶正电子科技有限公司 | Silicon dioxide loaded strip-shaped optical waveguide integrated structure and preparation method thereof |
| CN114647031A (en) * | 2022-01-21 | 2022-06-21 | 杭州芯傲光电有限公司 | Upper cladding covering process of optical waveguide device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0803589A1 (en) * | 1995-11-09 | 1997-10-29 | Nec Corporation | Method of manufacturing optical waveguide having no void |
| US5885881A (en) * | 1996-04-24 | 1999-03-23 | Northern Telecom Limited | Planar wave guide cladding |
| CN1240942A (en) * | 1998-06-24 | 2000-01-12 | 三星电子株式会社 | Optical fiber for use in Bragg grating and fiber Bragg grating using the same |
| CN1287277A (en) * | 1999-09-07 | 2001-03-14 | 朗迅科技公司 | Non-strain surface optical waveguide |
| CN1384923A (en) * | 1999-10-07 | 2002-12-11 | 阿尔卡塔尔光电子英国有限公司 | Optical waveguide with multi-layer core and method of fabrication thereof |
| CN1402027A (en) * | 2001-08-03 | 2003-03-12 | Asml美国公司 | Oxide member capable of using for optic waveguide and mfg. method thereof |
| CN1648696A (en) * | 2004-01-27 | 2005-08-03 | Tdk株式会社 | Optical waveguide and method of fabricating the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6705124B2 (en) * | 2001-06-04 | 2004-03-16 | Lightwave Microsystems Corporation | High-density plasma deposition process for fabricating a top clad for planar lightwave circuit devices |
| US7160746B2 (en) * | 2001-07-27 | 2007-01-09 | Lightwave Microsystems Corporation | GeBPSG top clad for a planar lightwave circuit |
-
2010
- 2010-06-08 CN CN2010101959436A patent/CN101859001B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0803589A1 (en) * | 1995-11-09 | 1997-10-29 | Nec Corporation | Method of manufacturing optical waveguide having no void |
| US5885881A (en) * | 1996-04-24 | 1999-03-23 | Northern Telecom Limited | Planar wave guide cladding |
| CN1240942A (en) * | 1998-06-24 | 2000-01-12 | 三星电子株式会社 | Optical fiber for use in Bragg grating and fiber Bragg grating using the same |
| CN1287277A (en) * | 1999-09-07 | 2001-03-14 | 朗迅科技公司 | Non-strain surface optical waveguide |
| CN1384923A (en) * | 1999-10-07 | 2002-12-11 | 阿尔卡塔尔光电子英国有限公司 | Optical waveguide with multi-layer core and method of fabrication thereof |
| CN1402027A (en) * | 2001-08-03 | 2003-03-12 | Asml美国公司 | Oxide member capable of using for optic waveguide and mfg. method thereof |
| CN1648696A (en) * | 2004-01-27 | 2005-08-03 | Tdk株式会社 | Optical waveguide and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101859001A (en) | 2010-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101859001B (en) | Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof | |
| CN104635298B (en) | A kind of planar optical waveguide and preparation method thereof | |
| US7372121B2 (en) | GeBPSG top clad for a planar lightwave circuit | |
| US7773840B2 (en) | Interface for a-Si waveguides and III/V waveguides | |
| Hoffmann et al. | Low-loss fiber-matched low-temperature PECVD waveguides with small-core dimensions for optical communication systems | |
| US6553170B2 (en) | Method and system for a combination of high boron and low boron BPSG top clad fabrication process for a planar lightwave circuit | |
| WO2016066033A1 (en) | Polarization splitter and rotator device | |
| CN105739013B (en) | A method of manufacture planar optical waveguide device | |
| US20060193584A1 (en) | Optical waveguide and method of fabricating the same | |
| EP0803589B1 (en) | Method of manufacturing optical waveguide having no void | |
| CN101718890B (en) | Preparation method of cross silt wave guide based on oxygen implantation technology | |
| US20070147761A1 (en) | Amorphous silicon waveguides on lll/V substrates with barrier layer | |
| Lin et al. | Void-filling and loss reduction in PECVD silica waveguide devices using boron–germanium codoped upper cladding | |
| Li et al. | Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides | |
| CN211348702U (en) | Micro-ring integrated arrayed waveguide grating wavelength division multiplexer | |
| JP4086485B2 (en) | Polarization-independent directional coupler and optical circuit using the same | |
| CN114924348B (en) | Three-dimensional edge coupler based on silicon dioxide optical waveguide | |
| JP3070018B2 (en) | Quartz optical waveguide and method of manufacturing the same | |
| CN102540334A (en) | Manufacturing method for PLC (planar lightwave circuit) optical device | |
| CN104360441A (en) | Silicon-dioxide optical waveguide production process for manufacturing optical divider | |
| Shi et al. | Fabrication of high precision self-aligned V-grooves integrated on silica-on-silicon chips | |
| JP3196797B2 (en) | Manufacturing method of laminated quartz optical waveguide | |
| US20030207483A1 (en) | Optical waveguide with layered core and methods of manufacture thereof | |
| Ou | Trenches for building blocks of advanced planar components | |
| JP2603652B2 (en) | Optical waveguide manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: HANGZHOU LANTEPU OPTOELECTRONICS TECHNOLOGY CO., L Free format text: FORMER OWNER: ZHEJIANG UNIVERSITY Effective date: 20130403 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 310027 HANGZHOU, ZHEJIANG PROVINCE TO: 310013 HANGZHOU, ZHEJIANG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130403 Address after: 310013 No. 525, Xixi Road, Hangzhou, Zhejiang, Xihu District Patentee after: Hangzhou base Photoelectric Technology Co.,Ltd. Address before: 310027 Hangzhou, Zhejiang Province, Xihu District, Zhejiang Road, No. 38, No. Patentee before: Zhejiang University |
|
| CI03 | Correction of invention patent | ||
| CI03 | Correction of invention patent |
Correction item: Patentee|Address Correct: Hangzhou Rand Puguang Electronic Technology Co., Ltd.|310013 525 Xixi Road, Xihu District, Hangzhou, Zhejiang. False: Hangzhou base Photoelectric Technology Co., Ltd.|310013 525 Xixi Road, Xihu District, Hangzhou, Zhejiang. Number: 17 Volume: 29 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120627 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |