CN107557760A - Top covering growth technique for array waveguide grating wafer production - Google Patents
Top covering growth technique for array waveguide grating wafer production Download PDFInfo
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- CN107557760A CN107557760A CN201710761724.1A CN201710761724A CN107557760A CN 107557760 A CN107557760 A CN 107557760A CN 201710761724 A CN201710761724 A CN 201710761724A CN 107557760 A CN107557760 A CN 107557760A
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Abstract
The invention discloses a kind of top covering growth technique for array waveguide grating wafer production, using flame hydrolysis deposition equipment, using the top covering of step deposition making wafer；Comprise the following steps：A. primary depositing is carried out to array waveguide grating top covering first, covers deposited powder using 12 circulations, deposit thickness is 8 10 um；B. it is then directly placed into annealing furnace and is annealed, improves the programming rate of annealing；C. after, wafer is taken out from annealing furnace, array waveguide grating top covering is deposited again, deposit thickness is 8 10 um；D. it will be placed again into annealing furnace and annealed by the wafer deposited twice, finally give 16 20 um top covering.Top covering raceway groove fillibility is good, melts the situation for fully, being not susceptible to decompose or melting inequality.Simultaneously, moreover it is possible to reach standard, obtain suitable refractive index and TE/TM differences are reduced to minimum.
Description
Technical field
The invention belongs to wavelength-division multiplex technique field, is related to array waveguide grating, specifically, is related to one kind and is used for array
The top covering growth technique of waveguide optical grating wafer production.
Background technology
Array waveguide grating (being abbreviated as AWG) is one of Primary Component of wavelength-division multiplex technique, and its propagation loss is small, with light
Fine coupling efficiency is high, it is considered to be a kind of most promising Novel wave separation multiplexer part.In AWG wafer productions, upper bag
For layer as a wherein important ring, we select have film forming speed fast, can make the flame hydrolysis deposition equipment (abbreviation of thick film
For FHD) make.But sensitive to temperature anomaly because the highly doped amount of boron and phosphorus during top covering is made, temperature
Slightly lower just to occur that white edge melt, the slightly higher boron of temperature and phosphorus can decompose precipitation again.
Existing FHD equipment top covering film forming is in order to meet that (refringence refers to top covering and sandwich layer to AWG high index-contrasts
Between refractive index difference), small TE/TM is poor, and (TE and TM refer to transverse electric pattern and E mode respectively, and TE/TM differences reduce, then
Stress numerical can accordingly diminish, and this index directly concerns the performance of product in itself, thus extremely important.) and annealing temperature
Condition not above 1000 DEG C, the situation that a um of secondary growth 20 occurs, either it is surface irregularity, or it is to have largely
The white edge not melted, otherwise be cladding surface occur largely because of decomposition and caused by bubble.Therefore say, wrapped in current this deposition
The process controllability of layer is poor, ingredient breakdown easily occurs or melts situations such as uneven.
In the case where equalization point is difficult to find that, changing processing step and parameter turns into instantly optimal breach.
The content of the invention
The purpose of the present invention is overcome the deficiencies in the prior art or defect, there is provided one kind is used for array waveguide grating wafer and given birth to
The top covering growth technique of production.The process controllability of top covering is good, can be effectively prevented from ingredient breakdown occur or melt inequality
Situation, obtain suitable refractive index and TE/TM differences are reduced to minimum.
To achieve these goals, present invention employs following technical scheme：
Top covering growth technique for array waveguide grating wafer production, it is characterised in that utilize flame hydrolysis deposition
Equipment, the top covering of wafer is made using step deposition；Comprise the following steps：
A. primary depositing is carried out to array waveguide grating top covering first, deposited powder, deposition is covered using 12 circulations
Thickness is 8-10 um；
B. it is then directly placed into annealing furnace and is annealed, improves the programming rate of annealing；
C. after, wafer is taken out from annealing furnace, array waveguide grating top covering deposited again, deposit thickness
For 8-10 um；
D. it will be placed again into annealing furnace and be annealed by the wafer that deposits twice, and finally give the upper of 16-20 um
Covering.
The above-mentioned top covering growth technique for array waveguide grating wafer production, wherein,
The programming rate of the annealing is 10 DEG C/min, and maximum temperature value is 1000 DEG C, and annealing time is 3 hours.
Compared with prior art, the invention has the advantages that：
The present invention makes AWG top covering raceway groove fillibilities good, melts the situation for fully, being not susceptible to decompose or melting inequality.
Simultaneously, moreover it is possible to reach standard, obtain suitable refractive index and TE/TM differences are reduced to minimum.
Brief description of the drawings
Fig. 1 is the top covering growth technique schematic flow sheet of the present invention for array waveguide grating wafer production.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
Referring to Fig. 1, show that the top covering of the present invention for array waveguide grating wafer production grows in figure
The flow of technique, its key technology scheme are：
Top covering growth technique for array waveguide grating wafer production, it is characterised in that utilize flame hydrolysis deposition
Equipment, the top covering of wafer is made using step deposition；Comprise the following steps：
A. primary depositing is carried out to array waveguide grating top covering first, covers deposited powder using 12 circulations, herein
A circulation represent a sedimentary, deposit thickness is 8-10 um；
B. it is then directly placed into annealing furnace and is annealed, improves the programming rate of annealing；
C. after, wafer is taken out from annealing furnace, secondary deposition, deposit thickness are carried out to array waveguide grating top covering
For 8-10 um；
D. it will be placed again into annealing furnace and annealed by the wafer of secondary deposition, finally give the upper of 16-20 um
Covering.
Top covering growth technique of the present invention, its programming rate annealed is 10 DEG C/min, and maximum temperature value is
1000 DEG C, annealing time is 3 hours.
The present invention is 8 um by stepped depositions, primary depositing thickness, then directly enters anneal, and annealing is risen
Warm speed is lifted to 10 degrees/min from 5 degrees/min, and changing over helium oxygen by original single helium in temperature-rise period mixes
Gas is closed, the flow of oxygen, reduces the annealing cycle when increase highest temperature is annealed.Wafer (i.e. wafer) is taken out afterwards and repeated
Deposit and anneal 1 time and obtain 16 um top covering, the top covering surface so obtained is smooth, and melts abundant.
The present invention is reduced to 12 cycle when deposited powder is covered, by original 24 cycle (circulating)
(circulating), is directly annealed after having deposited, and the programming rate of annealing is lifted to 10 degrees/min by original 5 degrees/min,
Highest temperature annealing time was reduced to 3 hours by original 10 hours, thus, is significantly reduced waveguide and is easily become because of high temperature
The risk of shape.The step of after taking out afterwards before repeating, wafer (i.e. wafer) is taken out repeated deposition and obtained for 1 time with annealing
20 um or so top covering.
Above example is used for illustrative purposes only, rather than limitation of the present invention, the technology people about technical field
Member, without departing from the spirit and scope of the present invention, can also make various conversion or modification, therefore all equivalent
Technical scheme should also belong to scope of the invention, should be limited by each claim.
Claims (2)
1. the top covering growth technique for array waveguide grating wafer production, it is characterised in that set using flame hydrolysis deposition
It is standby, the top covering of wafer is made using step deposition；Comprise the following steps：
A. primary depositing is carried out to array waveguide grating top covering first, deposited powder, deposit thickness is covered using 12 circulations
For 8-10 um；
B. it is then directly placed into annealing furnace and is annealed, improves the programming rate of annealing；
C. after, wafer is taken out from annealing furnace, array waveguide grating top covering is deposited again, deposit thickness 8-
10 um；
D. it will be placed again into annealing furnace and annealed by the wafer deposited twice, finally give 16-20 um top covering.
2. it is used for the top covering growth technique of array waveguide grating wafer production according to claim 1, it is characterised in that institute
The programming rate for stating annealing is 10 DEG C/min, and maximum temperature value is 1000 DEG C, and annealing time is 3 hours.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710761724.1A CN107557760B (en) | 2017-08-30 | 2017-08-30 | Top covering growth technique for array waveguide grating wafer production |
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|---|---|---|---|
| CN201710761724.1A CN107557760B (en) | 2017-08-30 | 2017-08-30 | Top covering growth technique for array waveguide grating wafer production |
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| CN107557760A true CN107557760A (en) | 2018-01-09 |
| CN107557760B CN107557760B (en) | 2019-03-29 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0854528A (en) * | 1994-08-10 | 1996-02-27 | Furukawa Electric Co Ltd:The | Production of optical waveguide |
| CN101604054A (en) * | 2009-07-03 | 2009-12-16 | 今皓光电（昆山）有限公司 | The method for packing of PLC optical fiber splitter |
| CN103882407A (en) * | 2012-12-20 | 2014-06-25 | 上海信电通通信建设服务有限公司 | Method for making silica film on surface of quartz substrate |
| CN104360441A (en) * | 2014-10-30 | 2015-02-18 | 成都康特电子高新科技有限责任公司 | Silicon-dioxide optical waveguide production process for manufacturing optical divider |
| CN104635298A (en) * | 2015-02-11 | 2015-05-20 | 深圳太辰光通信股份有限公司 | Planar optical waveguide and manufacturing method thereof |
| CN104678493A (en) * | 2013-12-01 | 2015-06-03 | 无锡宏纳科技有限公司 | Filling method for waveguide branch of planar optical waveguide demultiplexer |
-
2017
- 2017-08-30 CN CN201710761724.1A patent/CN107557760B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0854528A (en) * | 1994-08-10 | 1996-02-27 | Furukawa Electric Co Ltd:The | Production of optical waveguide |
| CN101604054A (en) * | 2009-07-03 | 2009-12-16 | 今皓光电（昆山）有限公司 | The method for packing of PLC optical fiber splitter |
| CN103882407A (en) * | 2012-12-20 | 2014-06-25 | 上海信电通通信建设服务有限公司 | Method for making silica film on surface of quartz substrate |
| CN104678493A (en) * | 2013-12-01 | 2015-06-03 | 无锡宏纳科技有限公司 | Filling method for waveguide branch of planar optical waveguide demultiplexer |
| CN104360441A (en) * | 2014-10-30 | 2015-02-18 | 成都康特电子高新科技有限责任公司 | Silicon-dioxide optical waveguide production process for manufacturing optical divider |
| CN104635298A (en) * | 2015-02-11 | 2015-05-20 | 深圳太辰光通信股份有限公司 | Planar optical waveguide and manufacturing method thereof |
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| CN107557760B (en) | 2019-03-29 |
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