CN113466568A - Manufacturing process of electric field sensor probe - Google Patents
Manufacturing process of electric field sensor probe Download PDFInfo
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- CN113466568A CN113466568A CN202110811786.5A CN202110811786A CN113466568A CN 113466568 A CN113466568 A CN 113466568A CN 202110811786 A CN202110811786 A CN 202110811786A CN 113466568 A CN113466568 A CN 113466568A
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- 230000005684 electric field Effects 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000000523 sample Substances 0.000 title claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 46
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 44
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 24
- 239000010936 titanium Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005520 cutting process Methods 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 238000001704 evaporation Methods 0.000 claims abstract description 10
- 238000000227 grinding Methods 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims abstract description 9
- 230000008020 evaporation Effects 0.000 claims abstract description 8
- 238000012546 transfer Methods 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 229910013648 LiNb3O8 Inorganic materials 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000009713 electroplating Methods 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 5
- 230000035945 sensitivity Effects 0.000 claims abstract description 5
- 239000013307 optical fiber Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 17
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 230000010287 polarization Effects 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000835 fiber Substances 0.000 claims description 7
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 230000018044 dehydration Effects 0.000 claims description 3
- 238000006297 dehydration reaction Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 230000005697 Pockels effect Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a manufacturing process of an electric field sensor probe, which has the technical scheme that the manufacturing process specifically comprises the following steps: s1, slicing: during slicing, X-cut Z-transfer lithium niobate crystals with the electric field direction parallel to the Z-axis direction of the lithium niobate crystals are selected to prepare substrate slices; s2, evaporation: preparing a buffer layer titanium as a mask on the substrate slice in the S1 by adopting a chemical vapor deposition technology; s3, optical waveguide etching; s4, PECVD: performing titanium diffusion, namely placing the lithium niobate crystal in a wet oxygen environment for titanium diffusion to inhibit LiO2 outward expansion, inhibit LiNb3O8 crystal phase from generating and reduce the photorefractive sensitivity of the crystal; s5, photoetching electrodes; s6, electroplating; s7, grinding and cutting; the manufacturing process of the electric field sensor probe has the characteristics of short production flow, large measurable dynamic range, high response speed, wide frequency range, small distortion to an electric field, high measurement precision, no electrical connection with primary equipment, full insulation and the like.
Description
Technical Field
The invention relates to the field of sensor production, in particular to a manufacturing process of an electric field sensor probe.
Background
Electric field sensor probes (FOVT) and electric field sensor test systems are used for power system overvoltage measurements. The probe of the electric field sensor is a key device for receiving a voltage signal by the measuring system of the electric field sensor. The electric field sensor measuring system comprises a laser light source, an isolator, a polarizing beam splitter (PMSP), an electric field sensor probe, a light receiving component, a field operation optical cable and the like. The electric field sensor probe has the characteristics of large measurable dynamic range, high response speed, wide frequency range, small electric field distortion, high measurement precision, no electrical connection with primary equipment, full insulation and the like.
The electric field sensor probe is based on the Pockels effect and adopts a common-path interference structure. When light enters an optical waveguide fabricated on a lithium niobate crystal by titanium diffusion, the light propagates in a TE mode and a TM mode, respectively. According to the Pockels effect, the refractive index of the waveguide is changed under the action of an electric field, so that the degree of modulation of the electric field on the polarized light in the 2 modes is different, and finally, the polarized light in the 2 modes has a phase difference at the output end of the waveguide, and the phase difference is in direct proportion to the intensity of the electric field induced by the sensor.
In order to obtain the intensity of the electric field, 2 modes of light interfere when being output to the waveguide, the phase difference signal is converted into a light intensity signal, the light intensity signal passes through the polarization beam splitter, and the light signal is converted into a voltage signal by the light receiver and is recorded by the oscilloscope. The transfer function of the measurement system is:
in the formula: a represents the power loss of an optical path and the photoelectric conversion coefficient of a receiver; b is the extinction ratio of the sensor;
a phase difference due to natural birefringence; e is the measured electric field intensity; e pi is defined as the half-wave electric field strength of the sensor, i.e. the phase difference is pi when the applied electric field strength is E pi.
By control of the production process
Approximately pi/2, when the measured electric field intensity E is much less than E pi, the transfer function can be approximately expressed as:
according to the formula, the response output of the measuring system is in linear relation with the electric field intensity.
The high-frequency electric field sensor is an electro-optical fiber electric field sensor, and the key for realizing the function is an electric field sensor probe. Therefore, the electric field sensor probe is the most important to produce.
The traditional Chinese patent with the publication number of CN109342836A discloses a production process based on a piezoelectric piezoresistive broadband high-field-strength miniature electric field sensor, which comprises a silicon-based wafer processing step, a glass processing step and a combined assembly step, and is characterized in that the silicon-based wafer processing step comprises an etching alignment mark step, an ion implantation and activation step, a bulk silicon etching step, an ohmic contact region and film surface releasing step, an electrode evaporating step and a routing region exposing step, the glass processing step comprises a glass grooving step, a glass electrode evaporating step, a routing region thickening step and a glass perforation step, and the combined assembly step comprises an anode bonding step, an assembly step and a routing step.
The production process based on the piezoelectric piezoresistive broadband high-field-strength micro electric field sensor is suitable for being used in a common electric field environment, but the production process based on the piezoelectric piezoresistive broadband high-field-strength micro electric field sensor has a series of defects of complex production process, long production line and the like.
Disclosure of Invention
The invention aims to provide a manufacturing process of an electric field sensor probe, which aims to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme:
a manufacturing process of an electric field sensor probe specifically comprises the following steps:
s1, slicing: during slicing, X-cut Z-transfer lithium niobate crystals with the electric field direction parallel to the Z-axis direction of the lithium niobate crystals are selected to prepare substrate slices;
s2, evaporation: preparing a buffer layer titanium as a mask on the substrate slice in the S1 by adopting a chemical vapor deposition technology;
s3, optical waveguide carving: preparing a waveguide opening region with an opening width meeting design tolerance on the buffer layer titanium in the S2 by adopting photoetching and wet etching processes;
s4, PECVD: performing titanium diffusion, namely placing the lithium niobate crystal in a wet oxygen environment for titanium diffusion to inhibit LiO2 outward expansion, inhibit LiNb3O8 crystal phase from generating and reduce the photorefractive sensitivity of the crystal;
s5, photoetching electrode: an electrode is carved on the lithium niobate crystal by adopting a light guide sleeve;
s6, electroplating: firstly, titanium is evaporated on a lithium niobate crystal, and then a gold layer is electroplated;
s7, grinding and cutting: the two end faces of the waveguide are obliquely polished, and the polishing angle is accurately controlled so as to reduce the return loss;
s8, processing by the optical fiber unit;
and S9, assembling the components.
Preferably, the S8 specifically includes the following steps:
s81, slotting: grooving the lithium niobate wafer;
s82, fixed axis: observing and adjusting the stress direction of the polarization-maintaining optical fiber under a microscope, and fixing the optical fiber in a groove of the lithium niobate wafer by using UV glue according to the condition of meeting an angle of 45 degrees with the polarization direction of the waveguide, wherein the tangential direction of the small piece of the lithium niobate crystal after coupling is the same as the tangential direction of the waveguide wafer;
s83, grinding and cutting: polishing the inclined end face of the optical fiber, controlling the polishing angle to be 15 degrees, and enabling the light beam to spread to meet the Fresnel law.
Preferably, the S9 specifically includes the following steps:
s91, coupling: coupling the optical fiber with the waveguide, and fixing by using a UV light-cured epoxy resin adhesive;
s92, pressure welding: fixing the chip coupled with the optical fiber in the tube shell by using epoxy resin glue, fixing the input/output optical fibers at two ends by using protective sleeves, welding a gold electrode lead by using an ultrasonic pressure welding process, and finally completing the encapsulation of the tube shell;
s93, testing: testing the SLD light source driving circuit and the signal amplifying circuit;
and S94, packaging.
Preferably, the width of the optical waveguide formed in S3 is 5-8 um.
Preferably, the length of the lithium niobate crystal obtained by slicing at S1 is 13.5 mm.
Preferably, the maximum electrooptical coefficient of the lithium niobate crystal obtained by the slicing at S1 is γ 33.
Preferably, before the evaporation in S2, the moisture on the substrate slice obtained in S1 is evaporated by dehydration baking.
Preferably, the specific steps adopted at the time of the S3 optical waveguide are as follows:
s31, spraying the photoresist solution on the surface of the substrate slice;
s32, accelerating the rotation of the substrate slice for spin coating, so that the photoresist remained on the surface of the silicon wafer is less than 1% of the original photoresist;
s33, selectively irradiating the photoresist covering the substrate slice with light with a specific wavelength;
s34, adding a developing solution after the exposure process is finished;
s35, high-temperature film hardening is carried out at the temperature of 80-100 ℃.
Preferably, the polarization maintaining fiber is metallized before S81 to avoid bare fiber.
Compared with the prior art, the invention has the beneficial effects that:
(1) compared with the traditional electric field sensor production process, the electric field sensor probe has the advantages that the steps of etching alignment marks, injecting ions and activating, corroding bulk silicon, releasing ohmic contact regions and thin film surfaces, exposing routing regions and the like are omitted, so that a plurality of steps and processes are saved, the production process can be shortened, the electric field sensor probe has great economic benefit, and a new way can be opened for the production of the electric field sensor;
(2) the electric field sensor manufactured by the manufacturing process of the electric field sensor probe has the characteristics of large measurable dynamic range, high response speed, wide frequency range, small distortion to an electric field, high measurement precision, no electrical connection with primary equipment, full insulation and the like. The lithium niobate crystal adopts a cutting mode of X-cutting and Z-cutting, the thermal expansion coefficient is more matched with the packaged ceramic tube shell, and the problem of unqualified loss variation caused by packaging is basically solved.
Drawings
FIG. 1 is a process flow diagram of the present invention;
FIG. 2 is a process flow diagram of the fiber unit treatment of the present invention;
FIG. 3 is a process flow diagram of the assembly of the components of the present invention;
FIG. 4 is an optical diagram of an electric field sensor measurement system;
fig. 5 is a schematic structural diagram of a chip in the electric field sensor.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1 to 5, the present invention provides a manufacturing process of an electric field sensor probe, wherein the technical scheme is as follows:
the method specifically comprises the following steps:
s1, slicing: during slicing, X-cut Z-transfer lithium niobate crystals with the electric field direction parallel to the Z-axis direction of the lithium niobate crystals are selected to prepare substrate slices;
s2, evaporation: preparing a buffer layer titanium as a mask on the substrate slice in the S1 by adopting a chemical vapor deposition technology;
s3, optical waveguide carving: preparing a waveguide opening region with an opening width meeting design tolerance on the buffer layer titanium in the S2 by adopting photoetching and wet etching processes;
s4, PECVD: performing titanium diffusion, namely placing the lithium niobate crystal in a wet oxygen environment for titanium diffusion to inhibit LiO2 outward expansion, inhibit LiNb3O8 crystal phase from generating and reduce the photorefractive sensitivity of the crystal;
s5, photoetching electrode: an electrode is carved on the lithium niobate crystal by adopting a light guide sleeve;
s6, electroplating: firstly, titanium is evaporated on a lithium niobate crystal, and then a gold layer is electroplated;
s7, grinding and cutting: the two end faces of the waveguide are obliquely polished, and the polishing angle is accurately controlled so as to reduce the return loss;
s8, processing by the optical fiber unit;
and S9, assembling the components.
In this embodiment, preferably, the S8 specifically includes the following steps:
s81, slotting: grooving the lithium niobate wafer;
s82, fixed axis: observing and adjusting the stress direction of the polarization-maintaining optical fiber under a microscope, and fixing the optical fiber in a groove of the lithium niobate wafer by using UV glue according to the condition of meeting an angle of 45 degrees with the polarization direction of the waveguide, wherein the tangential direction of the small piece of the lithium niobate crystal after coupling is the same as the tangential direction of the waveguide wafer;
s83, grinding and cutting: polishing the inclined end face of the optical fiber, controlling the polishing angle to be 15 degrees, and enabling the light beam to spread to meet the Fresnel law.
In this embodiment, preferably, the S9 specifically includes the following steps:
s91, coupling: coupling the optical fiber with the waveguide, and fixing by using a UV light-cured epoxy resin adhesive;
s92, pressure welding: fixing the chip coupled with the optical fiber in the tube shell by using epoxy resin glue, fixing the input/output optical fibers at two ends by using protective sleeves, welding a gold electrode lead by using an ultrasonic pressure welding process, and finally completing the encapsulation of the tube shell;
s93, testing: testing the SLD light source driving circuit and the signal amplifying circuit;
and S94, packaging.
In this embodiment, preferably, the optical waveguide formed in S3 has a width of 5 um.
In this embodiment, the length of the lithium niobate crystal obtained by slicing S1 is preferably 13.5 mm.
In this embodiment, the maximum electrooptical coefficient of the lithium niobate crystal obtained by slicing at S1 is preferably γ 33.
In this embodiment, before the evaporation in S2, the moisture on the substrate slice obtained in S1 is preferably evaporated by dehydration baking.
In this embodiment, preferably, the specific steps adopted at the time of the S3 optical waveguide are as follows:
s31, spraying the photoresist solution on the surface of the substrate slice;
s32, accelerating the rotation of the substrate slice for spin coating, so that the photoresist remained on the surface of the silicon wafer is less than 1% of the original photoresist;
s33, selectively irradiating the photoresist covering the substrate slice with light with a specific wavelength;
s34, adding a developing solution after the exposure process is finished;
s35, high-temperature film hardening is carried out at the temperature of 80 ℃.
In this embodiment, it is preferable that before S81, the polarization maintaining fiber is metallized to avoid bare fiber.
Example 2
Referring to fig. 1 to 5, the present invention provides a manufacturing process of an electric field sensor probe, wherein the technical scheme is as follows:
the method specifically comprises the following steps:
s1, slicing: during slicing, X-cut Z-transfer lithium niobate crystals with the electric field direction parallel to the Z-axis direction of the lithium niobate crystals are selected to prepare substrate slices;
s2, evaporation: preparing a buffer layer titanium as a mask on the substrate slice in the S1 by adopting a chemical vapor deposition technology;
s3, optical waveguide carving: preparing a waveguide opening region with an opening width meeting design tolerance on the buffer layer titanium in the S2 by adopting photoetching and wet etching processes;
s4, PECVD: performing titanium diffusion, namely placing the lithium niobate crystal in a wet oxygen environment for titanium diffusion to inhibit LiO2 outward expansion, inhibit LiNb3O8 crystal phase from generating and reduce the photorefractive sensitivity of the crystal;
s5, photoetching electrode: an electrode is carved on the lithium niobate crystal by adopting a light guide sleeve;
s6, electroplating: firstly, titanium is evaporated on a lithium niobate crystal, and then a gold layer is electroplated;
s7, grinding and cutting: the two end faces of the waveguide are obliquely polished, and the polishing angle is accurately controlled so as to reduce the return loss;
s8, processing by the optical fiber unit;
and S9, assembling the components.
In this embodiment, preferably, the S8 specifically includes the following steps:
s81, slotting: grooving the lithium niobate wafer;
s82, fixed axis: observing and adjusting the stress direction of the polarization-maintaining optical fiber under a microscope, and fixing the optical fiber in a groove of the lithium niobate wafer by using UV glue according to the condition of meeting an angle of 45 degrees with the polarization direction of the waveguide, wherein the tangential direction of the small piece of the lithium niobate crystal after coupling is the same as the tangential direction of the waveguide wafer;
s83, grinding and cutting: polishing the inclined end face of the optical fiber, controlling the polishing angle to be 15 degrees, and enabling the light beam to spread to meet the Fresnel law.
In this embodiment, preferably, the S9 specifically includes the following steps:
s91, coupling: coupling the optical fiber with the waveguide, and fixing by using a UV light-cured epoxy resin adhesive;
s92, pressure welding: fixing the chip coupled with the optical fiber in the tube shell by using epoxy resin glue, fixing the input/output optical fibers at two ends by using protective sleeves, welding a gold electrode lead by using an ultrasonic pressure welding process, and finally completing the encapsulation of the tube shell;
s93, testing: testing the SLD light source driving circuit and the signal amplifying circuit;
and S94, packaging.
The working principle and the advantages of the invention are as follows:
compared with the traditional electric field sensor production process, the electric field sensor probe has the advantages that the steps of etching alignment marks, injecting ions and activating, corroding bulk silicon, releasing ohmic contact regions and thin film surfaces, exposing routing regions and the like are omitted, so that a plurality of steps and processes are saved, the production process can be shortened, the electric field sensor probe has greater economic benefit, and a new way can be opened for the production of the electric field sensor;
the electric field sensor manufactured by the manufacturing process of the electric field sensor probe has the characteristics of large measurable dynamic range, high response speed, wide frequency range, small distortion to an electric field, high measurement precision, no electrical connection with primary equipment, full insulation and the like. The lithium niobate crystal adopts a cutting mode of X-cutting and Z-cutting, the thermal expansion coefficient is more matched with the packaged ceramic tube shell, and the problem of unqualified loss variation caused by packaging is basically solved.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A manufacturing process of an electric field sensor probe is characterized by comprising the following steps: the method specifically comprises the following steps:
s1, slicing: during slicing, X-cut Z-transfer lithium niobate crystals with the electric field direction parallel to the Z-axis direction of the lithium niobate crystals are selected to prepare substrate slices;
s2, evaporation: preparing a buffer layer titanium as a mask on the substrate slice in the S1 by adopting a chemical vapor deposition technology;
s3, optical waveguide carving: preparing a waveguide opening region with an opening width meeting design tolerance on the buffer layer titanium in the S2 by adopting photoetching and wet etching processes;
s4, PECVD: performing titanium diffusion, namely placing the lithium niobate crystal in a wet oxygen environment for titanium diffusion to inhibit LiO2 outward expansion, inhibit LiNb3O8 crystal phase from generating and reduce the photorefractive sensitivity of the crystal;
s5, photoetching electrode: an electrode is carved on the lithium niobate crystal by adopting a light guide sleeve;
s6, electroplating: firstly, titanium is evaporated on a lithium niobate crystal, and then a gold layer is electroplated;
s7, grinding and cutting: the two end faces of the waveguide are obliquely polished, and the polishing angle is accurately controlled so as to reduce the return loss;
s8, processing by the optical fiber unit;
and S9, assembling the components.
2. The manufacturing process of the electric field sensor probe according to claim 1, wherein: the S8 specifically includes the following steps:
s81, slotting: grooving the lithium niobate wafer;
s82, fixed axis: observing and adjusting the stress direction of the polarization-maintaining optical fiber under a microscope, and fixing the optical fiber in a groove of the lithium niobate wafer by using UV glue according to the condition of meeting an angle of 45 degrees with the polarization direction of the waveguide, wherein the tangential direction of the small piece of the lithium niobate crystal after coupling is the same as the tangential direction of the waveguide wafer;
s83, grinding and cutting: polishing the inclined end face of the optical fiber, controlling the polishing angle to be 15 degrees, and enabling the light beam to spread to meet the Fresnel law.
3. The manufacturing process of the electric field sensor probe according to claim 1, wherein: the S9 specifically includes the following steps:
s91, coupling: coupling the optical fiber with the waveguide, and fixing by using a UV light-cured epoxy resin adhesive;
s92, pressure welding: fixing the chip coupled with the optical fiber in the tube shell by using epoxy resin glue, fixing the input/output optical fibers at two ends by using protective sleeves, welding a gold electrode lead by using an ultrasonic pressure welding process, and finally completing the encapsulation of the tube shell;
s93, testing: testing the SLD light source driving circuit and the signal amplifying circuit;
and S94, packaging.
4. The manufacturing process of the electric field sensor probe according to claim 1, wherein: the width of the optical waveguide formed in S3 is 5-8 um.
5. The manufacturing process of the electric field sensor probe according to claim 1, wherein: the length of the lithium niobate crystal obtained by slicing the S1 is 13.5 mm.
6. The manufacturing process of the electric field sensor probe according to claim 1, wherein: the maximum electrooptical coefficient of the lithium niobate crystal obtained by the S1 slicing is gamma 33.
7. The manufacturing process of the electric field sensor probe according to claim 1, wherein: before the evaporation of the S2, the moisture on the substrate slices obtained in the S1 was evaporated by dehydration baking.
8. The manufacturing process of the electric field sensor probe according to claim 1, wherein: the specific steps adopted in the S3 optical waveguide process are as follows:
s31, spraying the photoresist solution on the surface of the substrate slice;
s32, accelerating the rotation of the substrate slice for spin coating, so that the photoresist remained on the surface of the silicon wafer is less than 1% of the original photoresist;
s33, selectively irradiating the photoresist covering the substrate slice with light with a specific wavelength;
s34, adding a developing solution after the exposure process is finished;
s35, high-temperature film hardening is carried out at the temperature of 80-100 ℃.
9. The manufacturing process of the electric field sensor probe according to claim 1, wherein: the polarization maintaining fiber is metallized to avoid bare fiber before the step S81.
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| CN116930629A (en) * | 2023-09-15 | 2023-10-24 | 清华大学 | Electric field sensing device and method |
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