JPH11344649A - Lens fiber coupler assembly and method for producing the assembly - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance the coupling efficiency between optical component elements by providing grooves with a substrate wafer aligned with a waveguide means, an input end for accepting light energy and an output end for focusing the light energy. SOLUTION: The substrate wafer input surface 26 of the lens fiber coupler assembly 20 including two short tapered (formed as lenses) single mode fibers 2 mounted at a substrate wafer holder 24 made of a III-V semiconductor material is aligned with the output surface 28 of a dual output silicon waveguide 30 and attached to it. The dual fiber assembly 46 is formed by fixing the optical fibers 22 into the U-shaped grooves 36 formed on the surface 38 of the substrate wafer 24. The grooves 36 are separated by a predetermined distance and are aligned at the spacing between the two output waveguides 40 on a silicon waveguide structure 30. A cap 42 is arbitrarily mounted at the substrate wafer 24 and further the optical fibers 22 are fixed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

FIELD OF THE INVENTION The present invention relates to a lens fiber coupler assembly for coupling light energy between optical devices, and to its use of a photolithographic process and the anisotropic etch characteristics of III-V semiconductors. A manufacturing method.

[0002]

BACKGROUND OF THE INVENTION Compact and robust optical coupling systems for micro-optical devices are essential in optical communication systems.
An increasingly popular method for coupling light energy between optical devices and systems relies on fibers and micro-optic lenses. Fibers are an effective transmission medium between optical devices by improving the coupling efficiency.
Micro-optic lenses provide additional coupling efficiency by focusing the divergent light energy output from the end of the optical fiber. In particular, fiber optic technology is being increasingly applied in the field of telecommunications. Many of these applications require very high coupling efficiencies between optical components such as detectors, laser diodes and optical integrated circuits.

[0003]

Although much work has been done in the production of highly coupling effective systems, most coupling assemblies are neither compact nor suitable for mass production. In addition, many of the coupling assemblies known in the prior art do not utilize semiconductor microfabrication techniques, III-V semiconductor materials, and micro-optics techniques. A simple, compact and reliable coupling system that can be manufactured using mass production techniques is highly desirable.

[0004] Based on techniques well known in the prior art for optoelectronic coupling mechanisms, lens fiber assemblies are highly desirable for coupling light from waveguides to optoelectronic devices.

[0005]

SUMMARY OF THE INVENTION An aspect of the present invention is an optical device having waveguide means for transmitting light energy; and a substrate wafer having grooves formed on a surface adjacent to the optical device. A groove wherein the groove is aligned with the waveguide means; an optical fiber disposed within the groove and having an input end for receiving light energy and an output end for focusing light energy;
An optical coupling assembly for coupling light energy between optical devices, comprising:

[0006] It is also an aspect of the present invention to provide a method for manufacturing an optical coupling assembly for coupling light energy between optical devices. The method comprises providing an optical device having an output surface and waveguide means for transmitting light energy; providing a substrate wafer having a surface and an input surface; and covering a surface of the substrate wafer. Coating a layer of a photoresist material on the substrate;
Baking the substrate wafer; selectively aligning the mask on the surface of the substrate wafer; exposing the surface of the substrate wafer coated with the layer of photoresist material with a light source to form a photoresist mask Developing the surface of the substrate wafer; selectively etching the surface of the substrate wafer to form a groove therein; removing the photoresist mask and cleaning the surface of the substrate wafer Mounting an optical fiber having an input end and an output end in a groove in the substrate wafer; aligning the waveguide means in the groove; and connecting the output surface of the optical device to the input surface of the substrate wafer. Attaching to the main body.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Semiconductor microfabrication technology is becoming a new technology for producing low-cost photonics systems in large quantities.
This technology in combination with micro-optics is also offering new ways to produce low-cost optics in large quantities.

[0008] Selective chemical etching is a method for microfabricating semiconductors. Chemical etching of semiconductor materials strongly depends on the crystal plane of the semiconductor. In III-V semiconductor materials, the surface includes Group III or Group V atoms. These atoms are etched at different rates, resulting in distinct structures. By choosing the etchant and the etching conditions, the quality of the etched surface is determined. For the purpose of illustration, the various crystal faces of the III-V semiconductor wafer 16 and the possible structures 10, 1
1, 12, 13, 14, and 15 are shown in FIG. By using the etching properties of semiconductor materials, various microstructures can be formed to align and hold small optical fibers.

Using the etch characteristics of III-V semiconductors and wafer fabrication techniques, the present invention generally provides an assembly for coupling light energy from a waveguide and focusing the light energy into optoelectronic circuits, and And a method for manufacturing the assembly.

As noted above, the present invention relates to an optical coupling assembly, and in particular, as shown in FIG. 2, two short tapered (lensed) mounted to a substrate wafer holder 24 made of III-V semiconductor material. A fiber lens coupler assembly 20 including a single mode fiber 22 in which a substrate wafer input surface 26 includes
Aligned and attached to output surface 28 of dual output silicon waveguide 30. The fiber lens coupler assembly 20 preferably has an output 32 of an 8 micron square single mode waveguide 30 (T in the preferred embodiment having a beam divergence of 110.22 microradians).
EM 00 mode Gaussian beam) to a 25 micron photodetector 34. The optical fiber 22 is inserted into a u-shaped groove 36 formed on the surface 38 of the substrate wafer 24.
(See also FIG. 8) to form a dual fiber assembly 46. The grooves 36 are separated by a predetermined distance, for example, 750 μm, and are aligned at an interval between two output waveguides 40 on the silicon waveguide structure 30. The output surface 44 of the dual fiber assembly 46 includes two lensed optical fiber ends 48 that are tapered about 10 microns and focus the output of the light energy 32 from the fiber 22 to a pair of detectors 34. Optionally, a cap 42 is attached to the substrate wafer 24, and the optical fiber 22 is further fixed.

As shown in FIG. 3, the substrate transition (tr
input surface 26 of dual fiber assembly 46 at an angle 52 of about 8 degrees to reduce back reflection to
To align the output surface 28 of the waveguide 30 with the angle 54 also polished to about 8 degrees. I do.
The input surface 26 can be joined to the output surface 28 by polishing,
This creates a physical contact interface without air pockets at transition 50.

The applicability of the principles of the present invention to the coupling of light energy from waveguides to other types of optical devices is:
You should understand. Although the illustrated embodiment of the present invention describes two waveguide and optical fiber pairs, it is further noted that the assembly may have one or an array of waveguides and optical fibers depending on the requirements of the application. You should understand.

For purposes of illustration, a method for making the present optical coupling assembly is further described and illustrated in FIGS. Specifically and in conjunction with the drawings, the first step in manufacturing the optical coupling assembly involves forming a semiconductor dual fiber holder 24, as shown in FIGS.

Utilizing the preferential crystallographic etching characteristics of the semiconductor wafer, the holder is manufactured by etching a u-shaped groove on the surface of the semiconductor wafer. III-V
The unique crystal plane properties of the semiconductor material allow preferential etching of the pair of u-shaped grooves on the surface of the semiconductor substrate wafer, as shown in FIG. The grooves hold optical fibers that are part of the optical coupler assembly and provide alignment for the optical fibers. The semi-circular shape allows for greater surface area contact between the circular optical fiber and the semiconductor wafer holder, thereby increasing the overall stability of the optical coupler assembly, and
The mold groove is important;

The first step in the trench fabrication method is to coat a layer of photoresist material 56 over the entire surface 34 of the indium phosphide (InP) substrate wafer 24, as shown in FIG. Preferred photoresist material 56
Is xylene and hexamethyldisilozane (hexametyldis
2-ethoxpyethylacetate (60%) and n-
Butyl acetate (5%), which is preferred because it is suitable for use with various etch techniques. The indium phosphide substrate wafer 24 is selected because of its crystallographic etching properties. It is important to note that other materials can be used for the substrate wafer 24 and for the photoresist coating 56. For example, the substrate wafer 24 can be any III-V semiconductor material, such as gallium arsenide (GaAs), indium arsenide (I
nAs), and gallium phosphide (GaP). As the photoresist coating material 56, 2-ethoxyethyl acetate + in xylene solvent +
n-butyl acetate, 2-ethoxyethyl acetate in xylene + n-butyl acetate and silicon dioxide (SiO ₂ ),
2-ethoxyethyl acetate + n-butyl acetate in xylene, silicon nitride (Si ₃ N ₄ ), silicon dioxide (Si
O ₂₎ and the composite (complex), silicon nitride (Si _x N _y), or can be given aluminum oxide (Al ₂ O _3).

After coating a layer of photoresist material 56 over surface 34 of substrate wafer 24, substrate wafer 24 is soft baked at a temperature of about 100 ° C. for about 45 minutes to remove solvent from photoresist material 56.

Next, as shown in FIG.
Is used to transfer the groove pattern 60 from the mask 58 to the substrate wafer 24. Mask 58 is aligned with substrate wafer 24, and then a layer of photoresist material 56 is exposed through mask 58 with an ultraviolet (UV) light source 62 to transfer groove pattern 60 to photoresist material 56. Next, as shown in FIG. 6, the photoresist material 5 of FIG.
The sixth layer is developed to form a photoresist mask 64 on the surface 34 of the substrate wafer 24.

Following the photolithography process described above,
Then, the substrate wafer 24 is
Etch preferentially in unprotected areas, shown in FIG.
As a result, a pair of u-shaped grooves 36 are formed. This priority
The etching process is performed by wet chemical etching.
In the method of (1), the substrate 24 is_TwoCr_TwoO₇: HBr: H_ThreeCC
Etch using a solution of OOH. Alternative wet chemistry
As an etch solution, bromine: methanol (Br_Two: H_ThreeC
OH), bromine: isopropanol (Br_Two: H_FiveC _TwoO
H), deionized water: hydrobromic acid: acetic acid (H_TwoO: HB
r: H_ThreeCCOOH), deionized water: potassium dichromate
: Sulfuric acid: hydrochloric acid (H_TwoO: K_TwoCr_TwoO₇: H_TwoSO_Four: HC
l), phosphoric acid: hydrochloric acid (H_ThreePO_Four: HCl), phosphoric acid: salt
Acid: deionized water (H_ThreePO_Four: HCl: H_TwoO), phosphorus
Acid: hydrochloric acid: hydrogen peroxide (H_ThreePO_Four: HCl: H_TwoO_Two),
Iron chloride under irradiation: hydrochloric acid (FeCl_Three: HCl), period
Potassium citrate: hydrochloric acid (KIO_Three: HCl), hydrochloric acid: vinegar
Acid: hydrogen peroxide (HCl: acetic acid: H_TwoO_Two), Hydrochloric acid: peracid
Hydrogen: deionized water (HCl: H_TwoO_Two: H_TwoO), sulfuric acid
Acid: Hydrogen peroxide: Deionized water (H_TwoSO_Four: H_TwoO_Two: H_Two
O), citric acid: hydrogen peroxide: deionized water (citric acid:
H_TwoO_Two: H_TwoO), bromine: methanol (Br)_Two: CH_ThreeO
H), nitric acid: hydrofluoric acid: deionized water (HNO_Three: HF: H_Two
O) or hydrogen peroxide: ammonium hydroxide (amoniu
m hydroxide): Deionized water (H_TwoO_Two: NH_FourOH: H _Two
O).

The surface 24 of the substrate wafer is etched and u-
After forming the mold grooves 36, the photoresist mask 64 is removed from the surface 34 of the substrate wafer 24. The surface 34 of the substrate wafer 24 is cleaned using acetone. Next, the acetone is removed from the surface 34 of the substrate wafer 24 using isopropanol, and then the isopropanol is removed using deionized water. Finally, oxides are removed from surface 34 using potassium hydroxide (KOH), and the etch residue is removed from sulfuric acid: hydrogen peroxide: deionized water (H ₂
It is removed from surface 34 using a solution of SO ₄ : H ₂ O ₂ : H ₂ O).

To complete the holder assembly, optical fibers 22 are mounted to semiconductor wafer 24 in grooves 36 formed on semiconductor wafer surface 34. Attachment of the fiber can be accomplished by either soldering or epoxy. For mounting by soldering,
According to the preferred embodiment, the optical fiber 22 and the semiconductor wafer holder 24 require metallization. As shown in FIG. 8, the semiconductor wafer 24 is metallized by a sputtering method. Specifically, a titanium (Ti) layer 86 is deposited over the entire surface of the substrate wafer holder 24.
Then, a layer 88 of platinum (Pt) is deposited over the layer 86 of titanium, and a layer 90 of gold (Au) is deposited over the layer 88 of platinum. Following the metallization method, standard alloying is applied to the metal layers 86, 88, and 90 to join the layers for better adhesion. Finally, as shown in FIG. 9, the metallized optical fiber 22 is eutectic (Au)
Sn) Mounting in groove 36 using solder 23, with lensed fiber end 48 located near output surface 44 of fiber holder assembly 46.

As mentioned above, the optical fiber 22 may alternatively be bonded by epoxy mounting. Metallization is not required for epoxy mounting, and the optical fiber 22 is mounted directly to the semiconductor holder 24 using an epoxy material such as, for example, a thermoset or optical ultraviolet (UV) cured epoxy.

Optionally, as shown in FIG.
May be attached to the fiber holder assembly 46 to further fix the optical fiber 22 between the semiconductor wafer 24 and the cap 42. The cap 42 is attached to the semiconductor wafer 2 by the soldering or epoxy attaching process described above.
4 may be fixed.

Following fiber attachment, the fiber holder assembly 46 is selectively polished to eliminate back reflection of light energy transitions from the waveguide to the fiber holder assembly 46. As shown in FIG. 11, the holder assembly 46 is mounted, and the input surface 26 of the fiber holder assembly 46 is set to about 8 mm.
Polishing by lapping at an angle of about 60 d reduces back reflections when the input surface 26 joins the output surface of the waveguide, thereby creating a physical contact without air pockets.
B. In the absence of a tilt transition between the waveguide and the holder assembly, some of the transmitted light energy may reflect back to its source, hindering the source's ability to effectively transmit light energy, Reduction of back reflection is important. The tilt transition allows light energy that might otherwise be reflected back to its source to be diverted from the light energy source. Optionally, back reflection can be further reduced by coating the waveguide output surface and the fiber holder assembly input surface transition with an anti-reflective (AR) film.

To further optimize the optical coupling efficiency between the waveguide and the fiber holder assembly 46, the polished back surface 26 of the fiber holder assembly 46 is optionally selectively etched as shown in FIG. To expose a small portion of the optical fiber input end 70. The selective etching allows a coupling connection at the physical contact to be established at the waveguide to the fiber holder assembly transition, thereby reducing back reflections.

In addition, the enhancement of coupling and the reduction of back reflections can be reduced by the lens fiber end 4 of the fiber holder assembly 46.
8 can be obtained by coating it with an anti-reflection (AR) film.

Finally, as shown in FIG. 2, the fiber holder assembly 46 is aligned with the waveguide output surface 28,
Solder or glue with epoxy resin. In the case of soldering, as described in the soldering process, the optical waveguide 30 is made of TiPtAu and standard eutectic (AuSn).
Metallize using solder. Before installation,
As shown in FIG. 3, the waveguide output surface 28 is polished at an angle of about 8 degrees to align the polished input surface 26 of the fiber holder assembly 46. The angular interface between waveguide 30 and fiber holder assembly 46 reduces back reflections and is a technique commonly used in high performance transmission applications.

The lensed fiber coupling assembly 20 of the preferred embodiment includes a fiber holder assembly 46 constructed using III-V semiconductor fabrication techniques and a u-groove 36 in the semiconductor holder 24, as shown in FIG. The lensed optical fiber 22 is aligned and mounted therein. The input face 26 of the fiber holder assembly 46 is attached to the output face 28 of the waveguide assembly 30, where light energy 32 passes from the waveguide 30 to the optical fiber 22 and is focused on a pair of photodetectors 34. .

Obviously, many modifications and variations of the present invention,
This is possible in light of the above teachings. Therefore, it is to be understood that, within the scope of the appended claims, the invention may be practiced otherwise than as specifically described above.

[Brief description of the drawings]

FIG. 1 is an isometric view of a natural crystal plane of a III-V semiconductor wafer.

FIG. 2 is an illustration of an optical coupling assembly according to the present invention.

FIG. 3 is a side view of an optical coupling assembly according to the present invention.

FIG. 4 is a diagram of a semiconductor holder manufacturing process according to the present invention.

FIG. 5 is a diagram of a semiconductor holder manufacturing process according to the present invention.

FIG. 6 is a diagram of a semiconductor holder manufacturing process according to the present invention.

FIG. 7 is a diagram of a semiconductor holder manufacturing process according to the present invention.

FIG. 8 is a diagram of a metallization method of a semiconductor holder according to the present invention.

FIG. 9 is a view of a fiber holder assembly according to the present invention.

FIG. 10 is an alternate embodiment of a fiber holder assembly according to the present invention.

FIG. 11 is an illustration of a polished input surface of a fiber holder assembly according to the present invention.

FIG. 12 is an alternate embodiment of a polished input surface of a fiber holder assembly according to the present invention.

[Explanation of symbols]

 Reference Signs List 20 fiber lens coupler assembly 22 single mode fiber 23 eutectic (AuSn) solder 24 substrate wafer holder 26 substrate wafer input surface 28 output surface of dual output silicon waveguide 30 30 dual output silicon waveguide 32 output 34 of substrate wafer 24 Surface (photoelectric detector) 36 u-shaped groove 38 Surface of substrate wafer 24 40 Output waveguide 42 Cap 44 Output surface of dual fiber assembly 46 Dual fiber assembly 48 Lensed optical fiber end 50 Substrate transition 52, 54 Angle 56 Photoresist coating 58 Pattern mask 60 Groove pattern 62 Ultraviolet (UV) light source 64 Photoresist mask 70 Optical fiber input end 86 Titanium layer 88 Platinum layer 90 Gold layer 92 Evaporation

Continuing on the front page (72) Inventor Dean Tran, Coronette Avenue, Westminster, California 92331, USA 9331 (72) Inventor Ronald El Stolyek, 92083, California, United States, Vista, Country View Lane 1466 ( 72) Inventor Edward A. Rezek, Paseo Tortugas 4720, Torrance, CA 90505, USA

Claims (41)

[Claims] 1. An optical device having waveguide means for transmitting light energy; and a substrate wafer having a groove formed on a surface adjacent to the optical device, wherein the groove is formed by the waveguide means. An optical fiber disposed in the groove and having an input end for receiving the light energy and an output end for focusing the light energy.
Optical coupling assembly. 2. The optical assembly according to claim 1, wherein the optical device and the substrate wafer each have a polished surface. 3. The optical coupling assembly according to claim 2, wherein the polished surface of the optical device is formed at an angle of about 8 degrees. 4. The optical coupling assembly of claim 2, wherein said polished surface of said substrate wafer is formed at an angle of about 8 degrees. 5. The optical coupling assembly according to claim 2, wherein the polished surface of the substrate wafer is adjacent to the polished surface of the optical device. 6. The optical coupling assembly according to claim 2, wherein the input end of the optical fiber is aligned with the polished surface of the substrate wafer. 7. The method according to claim 1, wherein the substrate wafer is gallium arsenide (G).
The optical coupling assembly of claim 1, comprising an III-V semiconductor material selected from the group consisting of: aAs), gallium phosphide (GaP), indium phosphide (InP), or indium arsenide (InAs). 8. The optical coupling assembly according to claim 1, wherein the groove is formed in a u-shape. 9. The optical coupling assembly according to claim 1, wherein said optical fiber is a single mode fiber. 10. The optical coupling assembly according to claim 1, wherein said optical fiber is a tapered optical fiber. 11. The optical coupling assembly according to claim 10, wherein the output end of the tapered optical fiber is tapered about 10 microns. 12. The optical coupling assembly of claim 1, wherein the input end of the optical fiber is polished at an angle of about 8 degrees. 13. The optical coupling assembly according to claim 1, further comprising a cap adjacent to the substrate wafer surface, whereby the optical fiber is disposed between the cap and the substrate wafer. 14. A method for manufacturing an optical coupling assembly, comprising: providing an optical device having an output surface and waveguide means for transmitting light energy; and having a surface and an input surface. Providing a substrate wafer; coating a layer of photoresist material over the surface of the substrate wafer; baking the substrate wafer; and selectively aligning a mask on the surface of the substrate wafer. Exposing the surface of the substrate wafer coated with the layer of photoresist material with a light source to form a photoresist mask; developing the surface of the substrate wafer; and surface of the substrate wafer. Selectively etching to form a groove therein; removing the photoresist mask and then washing the surface of the substrate wafer. Cleaning an optical fiber having an input end and an output end in the groove of the substrate wafer; aligning the waveguide means in the groove; and an output surface of the optical device. Attaching to an input surface of the substrate wafer. 15. The method of claim 14, further comprising polishing the output surface of the optical device at an angle of about 8 degrees. 16. The step of providing a substrate wafer,
The substrate wafer of III-V semiconductor material is prepared by using gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), or indium arsenide (InA).
15. The method of claim 14, further comprising selecting from the group consisting of: s). 17. The method of coating the layer of photoresist material over a surface of the substrate wafer, comprising: coating the photoresist material with 2-ethoxyethyl acetate + n-butyl acetate in xylene, xylene and hexamethyldiethyl acetate. 2-ethoxyethyl acetate with Rosan +
n-butyl acetate, 2-ethoxyethyl acetate in xylene + n-butyl acetate and silicon dioxide (SiO ₂ ),
2-ethoxyethyl acetate + n-butyl acetate in xylene, silicon nitride (Si ₃ N ₄ ), silicon dioxide (Si
O ₂₎ and the composite silicon nitride (Si _x N _y), or further comprising the step of selecting from the group consisting of aluminum oxide (Al ₂ O _3), The method of claim 14. 18. The method of claim 14, wherein baking the substrate wafer further comprises baking the substrate wafer at a temperature of about 100.degree. 19. The method of claim 14, wherein selectively etching the surface of the substrate wafer to form the trench further comprises wet chemical etching. 20. The method of claim 19, wherein forming the groove by wet chemical etching further comprises forming the groove in a u-shape. 21. The step of wet chemical etching comprises: potassium dichromate: hydrobromic acid: acetic acid (K ₂ Cr ₂ O ₇ : H).
Br: H ₃ CCOOH, bromine: methanol (Br ₂ : H
₃ COH), bromine: isopropanol (Br ₂ : H ₅ C ₂ O)
H), deionized water: hydrobromic acid: acetic acid (H ₂ O: HB)
r: H ₃ CCOOH), deionized water: potassium dichromate: sulfuric acid: hydrochloric acid (H ₂ O: K ₂ Cr ₂ O ₇ : H ₂ SO ₄ : HC)
1), phosphoric acid: hydrochloric acid (H ₃ PO ₄ : HCl), phosphoric acid: hydrochloric acid: deionized water (H ₃ PO ₄ : HCl: H ₂ O), phosphoric acid: hydrochloric acid: hydrogen peroxide (H ₃ PO ₄₎ : HCl: H ₂ O ₂ ),
Irradiated iron chloride: hydrochloric acid (FeCl ₃ : HCl), potassium periodate: hydrochloric acid (KIO ₃ : HCl), hydrochloric acid: acetic acid: hydrogen peroxide (HCl: acetic acid: H ₂ O ₂ ), hydrochloric acid: hydrogen peroxide : Deionized water (HCl: H ₂ O ₂ : H ₂ O), sulfuric acid: hydrogen peroxide: deionized water (H ₂ SO ₄ : H ₂ O ₂ : H ₂₎
O), citric acid: hydrogen peroxide: deionized water (citric acid:
H ₂ O ₂ : H ₂ O), bromine: methanol (Br ₂ : CH ₃ O)
H), nitric acid: hydrofluoric acid: deionized water (HNO ₃ : HF: H ₂₎
O), or hydrogen peroxide: ammonium hydroxide: deionized water _{(H 2 O 2: NH 4} OH: from H ₂ O) consisting of the group further comprises the step of selecting a wet chemical etch solution of claim 1
10. The method according to 9. 22. The method of claim 14, wherein attaching the optical fiber further comprises attaching a single mode optical fiber. 23. The method of claim 14, wherein attaching the optical fiber further comprises attaching a tapered optical fiber. 24. The method of claim 23, wherein installing the tapered optical fiber further comprises installing the tapered optical fiber having the output end tapered about 10 microns. 25. The method of claim 14, wherein mounting the optical fiber in the substrate wafer groove further comprises positioning and mounting the optical fiber input end near the substrate wafer input surface. 26. The method of claim 14, wherein mounting the optical fiber in the substrate wafer groove further comprises positioning and mounting the optical fiber output end near the substrate wafer output surface. 27. The method of claim 14, wherein mounting the optical fiber in the substrate wafer groove further comprises soldering the optical fiber to the substrate wafer. 28. The method of claim 27, wherein soldering the optical fibers to the substrate wafer further comprises metallizing the substrate wafer. 29. The method of claim 27, wherein soldering the optical fiber to the substrate wafer further comprises providing a metal coated optical fiber. 30. The method of claim 14, wherein mounting the optical fiber in the substrate wafer groove further comprises bonding the optical fiber to the substrate wafer with an epoxy resin. 31. The method of claim 14, further comprising attaching a cap to the substrate wafer surface and further securing the optical fiber. 32. The method of claim 31, wherein attaching the cap to the substrate wafer surface further comprises soldering the cap to the substrate wafer surface. 33. The method of claim 32, wherein soldering the cap to the substrate wafer surface further comprises metallizing the cap. 34. The method of claim 32, wherein soldering the cap to the substrate wafer surface further comprises metallizing the substrate wafer. 35. The method of claim 31, wherein attaching the cap to the substrate wafer surface further comprises bonding the cap to the substrate wafer surface with an epoxy resin. 36. The input surface of the substrate wafer may be about 8
2. The method of claim 1 further comprising the step of polishing at a degree angle.
4. The method according to 4. 37. The input end of the optical fiber having a length of about 8
4. The method of claim 3, further comprising the step of polishing at a degree angle.
7. The method according to 6. 38. The method of claim 14, wherein attaching the optical device output surface to the substrate wafer input surface further comprises soldering the output surface to the input surface. 39. The method of claim 38, wherein soldering the output surface to the input surface further comprises metallizing the optical device. 40. The method of claim 38, wherein soldering the output surface to the input surface further comprises metallizing the substrate wafer. 41. The step of attaching the output surface of the optical device to the input surface of the substrate wafer further comprises the step of bonding the output surface to the input surface with an epoxy resin.
The method described in.