CN106324772A - Indium phosphide laser light source-based transmitting-receiving device - Google Patents
Indium phosphide laser light source-based transmitting-receiving device Download PDFInfo
- Publication number
- CN106324772A CN106324772A CN201610855623.6A CN201610855623A CN106324772A CN 106324772 A CN106324772 A CN 106324772A CN 201610855623 A CN201610855623 A CN 201610855623A CN 106324772 A CN106324772 A CN 106324772A
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- CN
- China
- Prior art keywords
- light source
- indium phosphide
- laser light
- laser
- unit
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to the laser transmitting and receiving equipment field and relates to an indium phosphide laser light source-based transmitting-receiving device. The indium phosphide laser light source-based transmitting-receiving device includes an indium phosphide laser light source, an optical assembly, a light receiving device and a waveguide chip; the indium phosphide laser light source emits laser; the laser enters the light receiving device through the optical assembly; the light receiving device receives the laser; the laser enters the waveguide chip through the optical assembly; and therefore, efficient transmission of the laser can be realized. According to the indium phosphide laser light source-based transmitting-receiving device of the invention, the indium phosphide laser light source is adopted, the functions of an existing laser are realized; since the indium phosphide laser light source can emit light after being electrified, the TO tube base of a laser in a traditional scheme is omitted, and therefore, the cost of a product can be decreased; and the indium phosphide laser light source is adopted as the laser light source of the transmitting-receiving device, the performance of the device can be improved, the power consumption of the device can be decreased, and the device is high in integration degree and low in price.
Description
Technical field
The present invention relates to laser transmitting-receiving apparatus field, be specifically related to a kind of R-T unit based on indium phosphide LASER Light Source.
Background technology
The series of process technology of semiconductor technology is constantly updating development.Transistor germanium (Ge) manufactures in early days,
But in the early stage sixties in 20th century, silicon (Si) device has exceeded it soon in performance and price.Silicon can be established now half
Dominant position in conductor industry, part the continually developing of Technology to be given the credit to so that silicon device at integrated functionalities and
There is in price the strongest competitiveness.To the later stage eighties 20th century, come from compound-material field GaAs
(GaAs) broken the monopoly position of silicon device, but people are still finding a kind of compound semiconductor skill that can substitute GaAs
Art, in high-performance, in high volume business are applied.A kind of novel semi-conductor compound devices has started to go out in the lab
Existing, here it is indium phosphide (InP) and derived material thereof, they form the tide of semi-conducting material development.Indium phosphide is in optical fiber system
Make, millimeter wave is even all transparent to show that out the cogent feature performance benefit being better than GaAs in terms of wireless application, it is believed that
These advantages will make indium phosphide and other material pull open gap, thus finally substitute GaAs and become compound semiconductor technology
Optimum selection.
At fiber optic communication field, only inp semiconductor technology can by photo-detector and laser instrument and other simulation and
Mixed signal functions is integrated in same substrate, the advantage with high integration and low price, so that optical device realizes great
Break through；In wireless domain, indium phosphide amplifier is the most all improved, including improving performance, reducing power consumption, additionally
The higher linearity and low temperature sensitivity can be greatly improved battery life and be designed by modern cell phones and accept；At GaAs or silicon
The Millimeter Wave Applications that is beyond one's reach aspect, we can be easy to realize passive imaging by indium phosphide device and occur on the market
Other more recent application.
How inp semiconductor technology is applied in existing generating laser, be asking of research staff's primary study
One of topic.
Summary of the invention
The technical problem to be solved in the present invention is, for the drawbacks described above of prior art, it is provided that a kind of based on indium phosphide
The R-T unit of LASER Light Source, eliminates the TO base of traditional scheme laser instrument, thus reduces the cost of product.
The technical solution adopted for the present invention to solve the technical problems is: provide a kind of receipts based on indium phosphide LASER Light Source
Transmitting apparatus, including indium phosphide LASER Light Source, optical module, connects light device and waveguide chip, and this indium phosphide LASER Light Source is launched sharp
Light is also incided by optical module and connects in light device, and this connects laser that light device reflection receivable arrives incident by optical module
In waveguide chip, it is achieved effective transmission of laser.
Wherein, preferred version is: this waveguide chip is set up in parallel with indium phosphide LASER Light Source, this waveguide chip and indium phosphide
LASER Light Source is arranged on one end of optical module, and this waveguide chip is arranged on the other end of optical module.
Wherein, preferred version is: this optical module is to be separately positioned at the exit ports of indium phosphide LASER Light Source
One lens and being arranged on connect second lens incident port of light device.
Wherein, preferred version is: this optical module includes the ball being arranged on indium phosphide LASER Light Source and connecing between light device
Lens.
Wherein, preferred version is: these first lens are arranged at the entry port of waveguide chip.
Wherein, preferred version is: this R-T unit also includes power supply, and this power supply electrically connects with indium phosphide LASER Light Source, should
Indium phosphide LASER Light Source launches laser after powered up.
Wherein, preferred version is: the material of this indium phosphide LASER Light Source is in whole or in part for inp semiconductor material.
The beneficial effects of the present invention is, compared with prior art, the present invention is a kind of based on indium phosphide laser by design
The R-T unit of light source, uses indium phosphide LASER Light Source, it is achieved the function of existing laser instrument, owing to indium phosphide LASER Light Source is energized
Luminous characteristic, saves the TO base of traditional scheme laser instrument of knowing clearly, thus reduces the cost of product；Meanwhile, indium phosphide swashs
Radiant, as the lasing light emitter of R-T unit, improves performance, reduces power consumption, the advantage also with high integration and low price.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the structural representation of a kind of R-T unit based on indium phosphide LASER Light Source of the present invention；
Fig. 2 is the structural representation that the present invention has the R-T unit of globe lens.
Detailed description of the invention
In conjunction with accompanying drawing, presently preferred embodiments of the present invention is elaborated.
As described in Figure 1, the present invention provides the preferred embodiment of a kind of R-T unit based on indium phosphide LASER Light Source.
A kind of R-T unit based on indium phosphide LASER Light Source 10, including indium phosphide LASER Light Source 10, optical module 20, connects
Light device 30 and waveguide chip (accompanying drawing does not shows), this indium phosphide LASER Light Source 10 launches laser and by optical module 20 incidence
To connecing in light device 30, this connect light device 30 reflection receivable to laser and incide in waveguide chip by optical module 20,
Realize effective transmission of laser.
Further, this waveguide chip is set up in parallel with indium phosphide LASER Light Source 10, this waveguide chip and indium phosphide laser
Light source 10 is arranged on one end of optical module 20, and this waveguide chip is arranged on the other end of optical module 20；Preferably, waveguide core
Sheet is arranged in indium phosphide LASER Light Source 10.
Wherein, optical module 20 be separately positioned on the first lens 21 at the exit ports of indium phosphide LASER Light Source 10,
And it is arranged on the second lens 22 going out incident port connecing light device 30.
Wherein, these first lens 21 are arranged at the entry port of waveguide chip, the light that laser instrument is sent by waveguide chip
It is transmitted in the first lens 21.
Specifically, laser is launched in indium phosphide LASER Light Source 10 energising, converges laser by first lens the 21, second lens 22
And directive connects light device 30, connect light device 30 and receive laser and process, after process, laser is passed sequentially through the first lens 21,
Second lens 22 are transmitted in waveguide chip, it is achieved the transmitting-receiving of laser.
In the present embodiment, the material of this indium phosphide LASER Light Source 10 is inp semiconductor material in whole or in part.
Inp semiconductor material has electronics limit drift velocity height, radiation resistance is good, heat conduction is good a little, partly leads with GaAs
Body material is compared, and has breakdown electric field, thermal conductivity, feature that electronics average speed is the highest, is a kind of preferably lasing light emitter material.
Specifically, the indium phosphide LASER Light Source 10 in the present embodiment can be made up of inp semiconductor material, after energising
Launching laser, meanwhile, indium phosphide LASER Light Source 10 can be pressed certain respective outer side edges by inp semiconductor material in other materials,
Form generating laser, improve the optical property of indium phosphide LASER Light Source 10.
As in figure 2 it is shown, the present invention provides R-T unit another preferred embodiment.
This optical module 20 includes the globe lens 23 being arranged on indium phosphide LASER Light Source 10 and connecing between light device 30.
Specifically, laser is launched in indium phosphide LASER Light Source 10 energising, converges laser by globe lens 23 and directive connects light and sets
Standby 30, connect light device 30 and receive laser and process, after process, laser is transmitted in waveguide chip by globe lens 23, real
The transmitting-receiving of existing laser.
In the present invention, it is provided that the preferred embodiment of a kind of R-T unit.
This R-T unit also includes power supply (accompanying drawing does not shows), and this power supply electrically connects with indium phosphide LASER Light Source 10, this phosphorus
Change indium LASER Light Source 10 and launch laser after powered up.
As described above, only preferred embodiment, it is not intended to limit the scope of the present invention, Fan Yibenfa
The equivalence that bright claim is made changes or modifies, and is all the present invention and is contained.
Claims (7)
1. a R-T unit based on indium phosphide LASER Light Source, it is characterised in that: include indium phosphide LASER Light Source, optics group
Part, connecing light device and waveguide chip, this indium phosphide LASER Light Source is launched laser and is incided by optical module and connect in light device,
This connect light device reflection receivable to laser and incide in waveguide chip by optical module, it is achieved effective transmission of laser.
R-T unit the most according to claim 1, it is characterised in that: this waveguide chip sets side by side with indium phosphide LASER Light Source
Putting, this waveguide chip and indium phosphide LASER Light Source are arranged on one end of optical module, and this waveguide chip is arranged on optical module
The other end.
R-T unit the most according to claim 1 and 2, it is characterised in that: this optical module is for being separately positioned on indium phosphide
The first lens at the exit ports of LASER Light Source and be arranged on the second lens going out incident port connecing light device.
R-T unit the most according to claim 1 and 2, it is characterised in that: this optical module includes that being arranged on indium phosphide swashs
Radiant and the globe lens connect between light device.
R-T unit the most according to claim 3, it is characterised in that: these the first lens are arranged on the incidence end of waveguide chip
At Kou.
R-T unit the most according to claim 1, it is characterised in that: this R-T unit also includes power supply, this power supply and phosphorus
Changing the electrical connection of indium LASER Light Source, this indium phosphide LASER Light Source launches laser after powered up.
R-T unit the most according to claim 1, it is characterised in that: the material of this indium phosphide LASER Light Source is all or portion
It is divided into inp semiconductor material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610855623.6A CN106324772A (en) | 2016-09-27 | 2016-09-27 | Indium phosphide laser light source-based transmitting-receiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610855623.6A CN106324772A (en) | 2016-09-27 | 2016-09-27 | Indium phosphide laser light source-based transmitting-receiving device |
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| Publication Number | Publication Date |
|---|---|
| CN106324772A true CN106324772A (en) | 2017-01-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610855623.6A Pending CN106324772A (en) | 2016-09-27 | 2016-09-27 | Indium phosphide laser light source-based transmitting-receiving device |
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| CN (1) | CN106324772A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19919415A1 (en) * | 1998-05-07 | 1999-11-18 | Trw Inc | Optical coupling unit useful in optical communication systems |
| US8787766B1 (en) * | 2009-12-17 | 2014-07-22 | Teledyne Technologies Incorporated | Chip scale fiber optic transmitter, receiver, transceiver |
| CN104202091A (en) * | 2014-08-28 | 2014-12-10 | 昂纳信息技术（深圳）有限公司 | Photon integrated optical module |
| CN104769467A (en) * | 2012-10-31 | 2015-07-08 | 国际商业机器公司 | Semiconductor device |
| CN205656354U (en) * | 2016-02-02 | 2016-10-19 | 昂纳信息技术（深圳）有限公司 | Multichannel receiver |
-
2016
- 2016-09-27 CN CN201610855623.6A patent/CN106324772A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19919415A1 (en) * | 1998-05-07 | 1999-11-18 | Trw Inc | Optical coupling unit useful in optical communication systems |
| US8787766B1 (en) * | 2009-12-17 | 2014-07-22 | Teledyne Technologies Incorporated | Chip scale fiber optic transmitter, receiver, transceiver |
| CN104769467A (en) * | 2012-10-31 | 2015-07-08 | 国际商业机器公司 | Semiconductor device |
| CN104202091A (en) * | 2014-08-28 | 2014-12-10 | 昂纳信息技术（深圳）有限公司 | Photon integrated optical module |
| CN205656354U (en) * | 2016-02-02 | 2016-10-19 | 昂纳信息技术（深圳）有限公司 | Multichannel receiver |
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Application publication date: 20170111 |