CN111736369A - Phase modulator and resonant cavity heterogeneous integrated chip - Google Patents
Phase modulator and resonant cavity heterogeneous integrated chip Download PDFInfo
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- CN111736369A CN111736369A CN202010798662.3A CN202010798662A CN111736369A CN 111736369 A CN111736369 A CN 111736369A CN 202010798662 A CN202010798662 A CN 202010798662A CN 111736369 A CN111736369 A CN 111736369A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/58—Turn-sensitive devices without moving masses
- G01C19/64—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
- G01C19/66—Ring laser gyrometers
- G01C19/661—Ring laser gyrometers details
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
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Abstract
The invention discloses a phase modulator and a resonant cavity heterogeneous integrated chip. Arranging a silicon nitride modulation resonance module on the lithium niobate thin film substrate; the silicon nitride modulation resonance module comprises a lithium niobate waveguide phase modulation unit, an interlayer coupling unit and a silicon nitride resonance unit; the input end of the lithium niobate waveguide phase modulation unit receives light output by the laser, and the lithium niobate waveguide phase modulation unit modulates the input light to obtain modulated light; the interlayer coupling unit realizes the transition of modulated light from the lithium niobate waveguide phase modulation unit to the silicon nitride resonance unit; the modulation light is coupled to the silicon nitride resonance unit through the interlayer coupling unit; the silicon nitride resonance unit resonates the coupled light, and then the resonated light is output to the detector through the output end of the silicon nitride resonance unit. By adopting the chip of the invention, the lithium niobate phase modulator and the resonant cavity are integrated on one chip, thus reducing the volume, lowering the power consumption and the cost and improving the stability of the resonant integrated optical gyro system.
Description
Technical Field
The invention relates to the technical field of integrated optical gyroscopes, in particular to a phase modulator and a resonant cavity heterogeneous integrated chip.
Background
Optical gyroscopes based on the Sagnac effect (Sagnac effect) are becoming the mainstream of the gyroscope market due to their advantages of all solid state, anti-electromagnetic interference, high precision, and wide dynamic range. The existing optical gyroscope mainly comprises a laser gyroscope and an interference type optical fiber gyroscope, has been widely applied in the fields of inertial navigation, attitude measurement and the like, and has higher marketization degree. But the cost, the volume, the weight and the power consumption are difficult to be greatly reduced, so that the application of the composite material in the civil field is limited. The angular speed sensing unit of the integrated optical gyroscope is an optical ring resonant cavity, an equivalent optical path which is hundreds of times or even thousands of times can be realized in a shorter geometric optical path by utilizing a resonance effect, and the detection sensitivity of the Sagnac effect is greatly enhanced, so that the high-sensitivity detection of the angular speed is realized in a very small size. The resonant integrated optical gyroscope combines the respective advantages of the optical gyroscope and the microelectronic technology, and has the potential advantages of small volume, light weight, high precision, good reliability, batch production and the like, so that the resonant integrated optical gyroscope has great market demand and is valued by scientific researchers. The optical ring resonant cavity can realize hundreds of times or even thousands of times of equivalent optical path in a short geometric optical path by utilizing the resonance effect, and greatly enhances the detection sensitivity of the Sagnac effect, thereby realizing high-sensitivity detection of angular velocity in a very small size.
At present, related researchers carry out a great deal of research on the resonant integrated optical gyroscope, performance indexes such as zero-bias stability and the like are also greatly improved, but the number of discrete devices of the system is large, so that the size and the power consumption of the system are large, the cost is high, and the engineering application is difficult to realize. The resonant cavity and the phase modulator are used as core devices in a gyro system, and the development of an integration technology is very important on the basis of ensuring the excellent performance of the gyro system.
Disclosure of Invention
The invention aims to provide a phase modulator and a resonant cavity heterogeneous integrated chip, wherein the modulator and the resonant cavity are integrated on one chip, so that the volume can be reduced, the power consumption and the cost can be reduced, the stability of a resonant integrated optical gyro system is improved, and the requirements of gyros with different precisions and different applications can be met.
In order to achieve the purpose, the invention provides the following scheme:
a phase modulator and resonant cavity heterogeneous integrated chip comprises: the silicon nitride modulation resonance module comprises a lithium niobate thin film substrate and a silicon nitride modulation resonance module arranged on the lithium niobate thin film substrate;
the silicon nitride modulation resonance module specifically comprises:
the device comprises a lithium niobate waveguide phase modulation unit, an interlayer coupling unit and a silicon nitride resonance unit;
the interlayer coupling unit is positioned between the lithium niobate waveguide phase modulation unit and the silicon nitride resonance unit, the input end of the interlayer coupling unit is connected with the output end of the lithium niobate waveguide phase modulation unit, and the output end of the interlayer coupling unit is connected with the input end of the silicon nitride resonance unit;
the input end of the lithium niobate waveguide phase modulation unit receives light output by the laser, and the lithium niobate waveguide phase modulation unit is used for modulating the input light to obtain modulated light; the interlayer coupling unit is used for realizing the transition of modulated light from the lithium niobate waveguide phase modulation unit to the silicon nitride resonance unit; the modulation light is coupled to the silicon nitride resonance unit through the interlayer coupling unit; the silicon nitride resonance unit is used for resonating the coupled light, and then the output end of the silicon nitride resonance unit outputs the resonated light to the detector.
Optionally, the lithium niobate thin film substrate specifically includes:
a silicon substrate, a silicon dioxide layer and a lithium niobate layer;
the lower surface of the silicon dioxide layer is arranged on the upper surface of the silicon substrate, the lower surface of the lithium niobate layer is arranged on the upper surface of the silicon dioxide layer, and the silicon nitride modulation resonance module is arranged on the upper surface of the lithium niobate layer.
Optionally, the lithium niobate waveguide phase modulation unit specifically includes:
a first modulation arm, a second modulation arm, a first electrode, a second electrode, a third electrode, and a fourth electrode;
a first end of the first modulation arm is connected with a first end of the second modulation arm, a second end of the first modulation arm is connected with a first input end of the interlayer coupling unit, and a second end of the second modulation arm is connected with a second input end of the interlayer coupling unit; the first modulating arm is disposed between the first electrode and the second electrode, and the second modulating arm is disposed between the third electrode and the fourth electrode;
the first electrode and the second electrode act on the first modulation arm to modulate light input from a first end of the first modulation arm; the third electrode and the fourth electrode act on the second modulation arm to modulate light input from the first end of the second modulation arm.
Optionally, the interlayer coupling unit specifically includes:
a first interlayer coupling part and a second interlayer coupling part;
a first end of the first interlayer coupling part is connected with a second end of the first modulation arm, and a second end of the first interlayer coupling part is connected with a first input end of the silicon nitride resonance unit;
and a first end of the second interlayer coupling part is connected with a second end of the second modulation arm, and a second end of the second interlayer coupling part is connected with a second input end of the silicon nitride resonance unit.
Optionally, the silicon nitride resonance unit specifically includes:
a first silicon nitride waveguide coupler, a resonant cavity and a second silicon nitride waveguide coupler;
a first input end of the first silicon nitride waveguide coupler is connected with a second end of the first interlayer coupling part, a second input end of the first silicon nitride waveguide coupler is connected with a second end of the second interlayer coupling part, a coupling end of the first silicon nitride waveguide coupler is connected with an input end of the resonant cavity, and an output end of the resonant cavity is connected with the second silicon nitride waveguide coupler;
the first silicon nitride waveguide coupler is used for coupling the modulated light transmitted by the first interlayer coupling part and the modulated light transmitted by the second interlayer coupling part to the resonant cavity;
the resonant cavity is used for resonating the coupled modulated light and transmitting the resonated light to the second silicon nitride waveguide coupler;
and the second silicon nitride waveguide coupler is used for coupling the resonated light and outputting the coupled light to the detector.
Alternatively to this, the first and second parts may,
the thickness of the first modulation arm is equal to the thickness of the second modulation arm;
the thicknesses of the first interlayer coupling part, the second interlayer coupling part, the first silicon nitride waveguide coupler, the resonant cavity and the second silicon nitride waveguide coupler are equal;
the thickness of the first modulation arm is smaller than that of the first interlayer coupling part, and the thickness of the second modulation arm is smaller than that of the second interlayer coupling part.
Optionally, the silicon nitride modulation resonance module is disposed on the lithium niobate thin film substrate by using a bonding process.
Optionally, the resonant cavity is a ring resonant cavity.
Optionally, the material of the silicon nitride modulation resonance module is silicon nitride.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a phase modulator and a resonant cavity heterogeneous integrated chip, which comprises a lithium niobate thin film substrate and a silicon nitride modulation resonant module arranged on the lithium niobate thin film substrate; the silicon nitride modulation resonance module comprises a lithium niobate waveguide phase modulation unit, an interlayer coupling unit and a silicon nitride resonance unit; the input end of the lithium niobate waveguide phase modulation unit receives light output by the laser, and the lithium niobate waveguide phase modulation unit is used for modulating the input light to obtain modulated light; the interlayer coupling unit is used for realizing the transition of modulated light from the lithium niobate waveguide phase modulation unit to the silicon nitride resonance unit; the modulation light is coupled to the silicon nitride resonance unit through the interlayer coupling unit; the silicon nitride resonance unit is used for resonating the coupled light, and then the output end of the silicon nitride resonance unit outputs the resonated light to the detector. According to the invention, the lithium niobate phase modulator and the resonant cavity are integrated on one chip according to the heterogeneous characteristics of lithium niobate and silicon nitride, so that the volume can be reduced, the power consumption and the cost can be reduced, the stability of the resonant integrated optical gyro system is improved, and the requirements of gyros with different precisions and different applications can be met.
In addition, the silicon nitride modulation resonance module is arranged on the lithium niobate thin film substrate by adopting a bonding process, so that the low-loss performance of the chip is favorably realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a top view of a phase modulator and a heterogeneous integrated resonator chip according to an embodiment of the present invention;
FIG. 2 is a side view of a phase modulator and resonator hetero-integrated chip structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the processing flow of the phase modulator and the resonator hetero-integrated chip structure according to the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a phase modulator and a resonant cavity heterogeneous integrated chip, wherein the modulator and the resonant cavity are integrated on one chip, so that the volume can be reduced, the power consumption and the cost can be reduced, the stability of a resonant integrated optical gyro system is improved, and the requirements of gyros with different precisions and different applications can be met.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Examples
As shown in fig. 1-2, a phase modulator and resonator heterogeneous integrated chip includes: a lithium niobate film substrate and a silicon nitride modulation resonance module arranged on the lithium niobate film substrate in a bonding mode.
Silicon nitride modulation resonance module specifically includes: the device comprises a lithium niobate waveguide phase modulation unit, an interlayer coupling unit and a silicon nitride resonance unit. The interlayer coupling unit is positioned between the lithium niobate waveguide phase modulation unit and the silicon nitride resonance unit, the input end of the interlayer coupling unit is connected with the output end of the lithium niobate waveguide phase modulation unit, and the output end of the interlayer coupling unit is connected with the input end of the silicon nitride resonance unit. An input end 1 of a lithium niobate waveguide phase modulation unit receives light output by a laser, and the lithium niobate waveguide phase modulation unit is used for modulating the input light to obtain modulated light; the interlayer coupling unit is used for realizing the transition of modulated light from the lithium niobate waveguide phase modulation unit to the silicon nitride resonance unit; the modulation light is coupled to the silicon nitride resonance unit through the interlayer coupling unit; the silicon nitride resonance unit is used for resonating the coupled light, and then the output end of the silicon nitride resonance unit outputs the resonated light to the detector. The material of the silicon nitride modulation resonance module is silicon nitride.
The lithium niobate waveguide phase modulation unit specifically comprises: a first modulation arm 2, a second modulation arm 3, a first electrode 4, a second electrode 5, a third electrode 6 and a fourth electrode 7. The first end of the first modulation arm 2 is connected with the first end of the second modulation arm 3, the second end of the first modulation arm 2 is connected with the first input end of the interlayer coupling unit, and the second end of the second modulation arm 3 is connected with the second input end of the interlayer coupling unit; the first modulation arm 2 is arranged between the first electrode 4 and the second electrode 5, and the second modulation arm 3 is arranged between the third electrode 6 and the fourth electrode 7; that is, the first electrode 4 and the second electrode 5 are provided at the upper and lower ends of the first modulation arm 2, respectively, and the third electrode 6 and the fourth electrode 7 are provided at the upper and lower ends of the second modulation arm 3, respectively. The first electrode 4 and the second electrode 5 act on the first modulation arm 2, thereby modulating light input from the first end of the first modulation arm 2; the third electrode 6 and the fourth electrode 7 act on the second modulation arm 3, thereby modulating light input from the first end of the second modulation arm 3. The first electrode 4, the second electrode 5, the third electrode 6 and the fourth electrode 7 apply electric signals to the lithium niobate modulator through gold wire leads respectively to modulate laser. The first modulation arm 2 and the second modulation arm 3 are both modulation arms of a thin-film lithium niobate phase modulator.
The interlayer coupling unit specifically comprises: a first interlayer coupling part 11 and a second interlayer coupling part 12. The first end of the first interlayer coupling part 11 is connected with the second end of the first modulation arm 2, the second end of the first interlayer coupling part 11 is connected with the first input end of the silicon nitride resonance unit, the first end of the second interlayer coupling part 12 is connected with the second end of the second modulation arm 3, and the second end of the second interlayer coupling part 12 is connected with the second input end of the silicon nitride resonance unit.
The silicon nitride resonance unit specifically comprises: a first silicon nitride waveguide coupler 8, a resonant cavity 10 and a second silicon nitride waveguide coupler 9. A first input end of the first silicon nitride waveguide coupler 8 is connected with a second end of the first interlayer coupling part 11, a second input end of the first silicon nitride waveguide coupler 8 is connected with a second end of the second interlayer coupling part 12, a coupling end of the first silicon nitride waveguide coupler 8 is connected with an input end of the resonant cavity 10, and an output end of the resonant cavity 10 is connected with the second silicon nitride waveguide coupler 9; the first silicon nitride waveguide coupler 8 is used for coupling the modulated light transmitted by the first interlayer coupling part 11 and the modulated light transmitted by the second interlayer coupling part 12 to the resonant cavity 10; the resonant cavity 10 is an annular resonant cavity and the resonant cavity 10 is of a transmission type structure, the resonant cavity 10 is used for resonating the coupled modulated light and transmitting the resonated light to the second silicon nitride waveguide coupler 9 in both clockwise and counterclockwise directions; the second silicon nitride waveguide coupler 9 is used for coupling the resonated light and outputting the coupled light to a detector for signal processing.
The lithium niobate thin film substrate specifically comprises: a silicon substrate 13, a silicon dioxide layer 14 and a lithium niobate layer 15. The lower surface of the silicon dioxide layer 14 is disposed on the upper surface of the silicon substrate 13, the lower surface of the lithium niobate layer 15 is disposed on the upper surface of the silicon dioxide layer 14, and the silicon nitride modulation resonance module is disposed on the upper surface of the lithium niobate layer 15.
Wherein the thickness of the first modulation arm 2 is equal to the thickness of the second modulation arm 3; the thicknesses of the first interlayer coupling part 11, the second interlayer coupling part 12, the first silicon nitride waveguide coupler 8, the resonant cavity 10 and the second silicon nitride waveguide coupler 9 are equal; the thickness of the first modulation arm 2 is smaller than that of the first interlayer coupling part 11, and the thickness of the second modulation arm 3 is smaller than that of the second interlayer coupling part 12.
And manufacturing a silicon nitride film on the lithium niobate film substrate. And etching the silicon nitride to form the strip-type waveguide. The basic element of the integrated structure is a strip-type waveguide. And etching the Y branch, and manufacturing electrodes on two sides of the Y branch to realize light splitting and phase modulation. The lithium niobate waveguide is utilized to realize the polarization effect of the waveguide by different constraint effects on TE (transverse electric wave) and TM (transverse magnetic wave). The interlayer coupling structure is designed to realize the coupling of light into the resonant cavity by the phase modulator. The manufacturing process flow is shown in fig. 3. Fig. 3(a) is a schematic diagram of substrate preparation, fig. 3(b) is a schematic diagram of bonded silicon nitride substrate, fig. 3(c) is a schematic diagram of first lithography effect, fig. 3(d) is a schematic diagram of first etching effect, fig. 3(e) is a schematic diagram of second lithography effect, fig. 3(f) is a schematic diagram of second etching effect, fig. 3(g) is a schematic diagram of deposited gold electrode, and fig. 3(h) is a schematic diagram of lift-off electrode formation structure.
The manufacturing process flow is as follows:
A. preparing a lithium niobate thin film substrate;
B. bonding the silicon nitride substrate with the lithium niobate thin film substrate, and removing the silicon substrate and the silicon dioxide layer of the silicon nitride substrate;
C. carrying out first photoetching on the silicon nitride layer;
D. etching the silicon nitride layer for the first time to form an interlayer coupling structure and an upper waveguide of the resonant cavity;
E. carrying out second photoetching on the silicon nitride layer;
F. etching the silicon nitride layer for the second time to form a silicon nitride resonance unit;
G. spin-coating photoresist, developing to form an electrode groove, and depositing a gold electrode layer;
H. and forming an electrode structure by adopting a stripping process.
The invention solves the problem that the phase modulator and the resonant cavity in the existing resonant optical gyro system can not be integrated. The phase modulator and the resonant cavity are completely integrated on the same substrate by adopting a thin-film lithium niobate and silicon nitride heterogeneous integration technology, so that heterogeneous integration of the phase modulator and the resonant cavity with low loss and high polarization extinction ratio is realized. The invention can reduce the influence of noise such as end surface reflection, insertion loss, polarization on axis error and the like. In addition, further reductions in cost, power consumption, volume, and weight are achieved.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In summary, this summary should not be construed to limit the present invention.
Claims (9)
1. A phase modulator and resonant cavity heterogeneous integrated chip is characterized by comprising: the silicon nitride modulation resonance module comprises a lithium niobate thin film substrate and a silicon nitride modulation resonance module arranged on the lithium niobate thin film substrate;
the silicon nitride modulation resonance module specifically comprises:
the device comprises a lithium niobate waveguide phase modulation unit, an interlayer coupling unit and a silicon nitride resonance unit;
the interlayer coupling unit is positioned between the lithium niobate waveguide phase modulation unit and the silicon nitride resonance unit, the input end of the interlayer coupling unit is connected with the output end of the lithium niobate waveguide phase modulation unit, and the output end of the interlayer coupling unit is connected with the input end of the silicon nitride resonance unit;
the input end of the lithium niobate waveguide phase modulation unit receives light output by the laser, and the lithium niobate waveguide phase modulation unit is used for modulating the input light to obtain modulated light; the interlayer coupling unit is used for realizing the transition of modulated light from the lithium niobate waveguide phase modulation unit to the silicon nitride resonance unit; the modulation light is coupled to the silicon nitride resonance unit through the interlayer coupling unit; the silicon nitride resonance unit is used for resonating the coupled light, and then the output end of the silicon nitride resonance unit outputs the resonated light to the detector.
2. The phase modulator and resonator hetero-integrated chip of claim 1, wherein the lithium niobate thin film substrate specifically comprises:
a silicon substrate, a silicon dioxide layer and a lithium niobate layer;
the lower surface of the silicon dioxide layer is arranged on the upper surface of the silicon substrate, the lower surface of the lithium niobate layer is arranged on the upper surface of the silicon dioxide layer, and the silicon nitride modulation resonance module is arranged on the upper surface of the lithium niobate layer.
3. The phase modulator and resonator hetero-integrated chip of claim 2, wherein the lithium niobate waveguide phase modulation unit specifically comprises:
a first modulation arm, a second modulation arm, a first electrode, a second electrode, a third electrode, and a fourth electrode;
a first end of the first modulation arm is connected with a first end of the second modulation arm, a second end of the first modulation arm is connected with a first input end of the interlayer coupling unit, and a second end of the second modulation arm is connected with a second input end of the interlayer coupling unit; the first modulating arm is disposed between the first electrode and the second electrode, and the second modulating arm is disposed between the third electrode and the fourth electrode;
the first electrode and the second electrode act on the first modulation arm to modulate light input from a first end of the first modulation arm; the third electrode and the fourth electrode act on the second modulation arm to modulate light input from the first end of the second modulation arm.
4. The phase modulator and resonator hetero-integrated chip according to claim 3, wherein the interlayer coupling unit specifically comprises:
a first interlayer coupling part and a second interlayer coupling part;
a first end of the first interlayer coupling part is connected with a second end of the first modulation arm, and a second end of the first interlayer coupling part is connected with a first input end of the silicon nitride resonance unit;
and a first end of the second interlayer coupling part is connected with a second end of the second modulation arm, and a second end of the second interlayer coupling part is connected with a second input end of the silicon nitride resonance unit.
5. The phase modulator and resonator hetero-integrated chip according to claim 4, wherein the silicon nitride resonance unit specifically comprises:
a first silicon nitride waveguide coupler, a resonant cavity and a second silicon nitride waveguide coupler;
a first input end of the first silicon nitride waveguide coupler is connected with a second end of the first interlayer coupling part, a second input end of the first silicon nitride waveguide coupler is connected with a second end of the second interlayer coupling part, a coupling end of the first silicon nitride waveguide coupler is connected with an input end of the resonant cavity, and an output end of the resonant cavity is connected with the second silicon nitride waveguide coupler;
the first silicon nitride waveguide coupler is used for coupling the modulated light transmitted by the first interlayer coupling part and the modulated light transmitted by the second interlayer coupling part to the resonant cavity;
the resonant cavity is used for resonating the coupled modulated light and transmitting the resonated light to the second silicon nitride waveguide coupler;
and the second silicon nitride waveguide coupler is used for coupling the resonated light and outputting the coupled light to the detector.
6. The phase modulator and resonant cavity heterogeneous integrated chip of claim 5,
the thickness of the first modulation arm is equal to the thickness of the second modulation arm;
the thicknesses of the first interlayer coupling part, the second interlayer coupling part, the first silicon nitride waveguide coupler, the resonant cavity and the second silicon nitride waveguide coupler are equal;
the thickness of the first modulation arm is smaller than that of the first interlayer coupling part, and the thickness of the second modulation arm is smaller than that of the second interlayer coupling part.
7. The phase modulator and resonator hetero-integrated chip of claim 1, wherein the silicon nitride modulation resonance module is disposed on the lithium niobate thin film substrate by a bonding process.
8. The phase modulator and resonant cavity hetero-integrated chip of claim 5, wherein the resonant cavity is a ring resonator.
9. The phase modulator and resonator hetero-integrated chip of claim 1, wherein the silicon nitride modulation resonator module is made of silicon nitride.
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| CN113280804A (en) * | 2021-05-19 | 2021-08-20 | 北京航空航天大学 | Nano-photon gyroscope |
| CN113280804B (en) * | 2021-05-19 | 2023-02-17 | 北京航空航天大学 | Nano-photon gyroscope |
| CN114124239A (en) * | 2021-11-12 | 2022-03-01 | 天津津航技术物理研究所 | Integrated photoelectric oscillator and system |
| CN116299866A (en) * | 2023-03-23 | 2023-06-23 | 重庆邮电大学 | Third-order micro-ring resonant filter with flat-top output response |
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