CN112965270B - Lithium niobate thin film double-Y branch optical waveguide modulator adopting curve optical waveguide connection - Google Patents
Lithium niobate thin film double-Y branch optical waveguide modulator adopting curve optical waveguide connection Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/58—Turn-sensitive devices without moving masses
- G01C19/64—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
- G01C19/72—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams with counter-rotating light beams in a passive ring, e.g. fibre laser gyrometers
- G01C19/721—Details
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
Abstract
The invention discloses a lithium niobate film double-Y-branch optical waveguide modulator connected by adopting a curve optical waveguide, which comprises a double-Y-branch optical waveguide phase modulator chip, wherein the double-Y-branch optical waveguide phase modulator chip comprises a substrate, a silicon dioxide layer, an optical waveguide layer and a protective layer are sequentially arranged on the substrate, and a modulation electrode is arranged on the protective layer; the optical waveguide layer comprises a lithium niobate thin film layer and a lithium niobate ridge optical waveguide with a double-Y-branch optical waveguide structure, and a transition optical waveguide connecting the two Y-branch optical waveguides is a curve waveguide. In the invention, the transition optical waveguide adopts a curve structure, so that the problems of crosstalk and noise formed by coupling of radiation modes in an optical path are effectively eliminated; in addition, the invention increases the refractive index difference between the lithium niobate ridge optical waveguide and the protective layer by changing the structure of the lithium niobate thin film optical waveguide chip, thereby enhancing the binding capacity of light, greatly reducing the bending radius of the optical waveguide and realizing the miniaturization of the double Y-branch optical waveguide modulator.
Description
Technical Field
The invention relates to the field of optical waveguide phase modulators, in particular to a lithium niobate thin film double-Y-branch optical waveguide modulator adopting curve optical waveguide connection.
Background
The optical fiber gyroscope is an angular velocity sensing instrument based on the Sagnac phase shift effect, and has a series of advantages of an all-solid structure, small volume, electromagnetic interference resistance, high precision, long service life and the like. As shown in FIG. 1, the fiber optic gyroscope is composed of a low-coherence light source, a fiber coupler, a Y-waveguide phase modulator, a polarization maintaining fiber ring, a photoelectric detector and a signal processing circuit, wherein the optical elements are connected in a tail fiber welding mode to form a closed light path, and the circuit part adopts an all-digital closed loop detection scheme. When the polarization maintaining optical fiber ring rotates at an angular rate omega relative to the inertia space, the two rows of light waves transmitted in the positive and negative directions respectively experience different optical paths to generate a Sagnac phase difference phi s, the signal processing circuit introduces a modulating signal on the Y-waveguide phase modulator to counteract the Sagnac phase difference phi s caused by the rotation of the optical fiber ring, and the angular rate information of the system rotating relative to the inertia space can be obtained by detecting the modulating signal.
In order to improve the light path integration level of the fiber-optic gyroscope and simplify the light path adjustment process, a scheme of adopting a double Y-branch light waveguide phase modulator to replace the combination of a fiber-optic coupler and a Y-waveguide phase modulator in the original light path is proposed in the industry. As shown in fig. 2, the dual Y-branch optical waveguide phase modulator chip uses a lithium niobate wafer as a substrate, and forms a Y-branch optical waveguide near a light source end, a Y-branch optical waveguide near a polarization-maintaining optical fiber ring end, a base waveguide connecting the two Y-branch optical waveguides, and a modulating electrode on the wafer surface by a microelectronic pattern process and a degenerate proton exchange optical waveguide preparation process.
However, when the dual Y-branch optical waveguide phase modulator is applied to a fiber optic gyroscope, the input light is approximately 3dB split on the first Y-branch, with half of the optical power propagating along the intermediate base waveguide to the second Y-branch; the other half of the optical power forms an asymmetric mode, radiates into the lithium niobate substrate and is re-coupled on the second branch (as shown by the dashed line in fig. 2) causing a parasitic phase difference between the two arms. The phase difference is very sensitive to temperature, forms crosstalk and noise in the optical path, and influences the zero bias stability of the fiber optic gyroscope.
The existing double Y-branch optical waveguide phase modulator mainly adopts a diffusion type optical waveguide technology (proton exchange technology/titanium diffusion technology) to manufacture the double Y-branch optical waveguide, and the refractive index difference delta n between the waveguide layer and the basal layer is small, generally only 0.01-0.04, and the binding capacity to light is weak, so that the bending radius of the lithium niobate diffusion type optical waveguide is large (the bending radius is too small, so that the waveguide loss is suddenly increased). Meanwhile, the bending radius of the lithium niobate diffusion type optical waveguide is larger, so that the space size occupied by the whole chip is greatly increased.
Disclosure of Invention
The invention aims to solve the technical problem of providing the lithium niobate thin film double-Y-branch optical waveguide modulator which can eliminate optical path crosstalk and noise and has small chip size and is connected by adopting a curve optical waveguide.
The technical scheme of the invention is as follows:
the lithium niobate thin film double-Y-branch optical waveguide modulator adopting curve optical waveguide connection comprises a double-Y-branch optical waveguide phase modulator chip, wherein the end face of one side of the double-Y-branch optical waveguide phase modulator chip is an input end face, and the end face of the other side of the double-Y-branch optical waveguide phase modulator chip is an output end face; the double Y-branch optical waveguide phase modulator chip comprises a substrate, wherein a silicon dioxide layer is arranged on the substrate, an optical waveguide layer made of a lithium niobate thin film material is arranged on the silicon dioxide layer, a protective layer is arranged on the optical waveguide layer, the refractive index of the protective layer material is smaller than that of the lithium niobate thin film material, and a modulation electrode is arranged on the protective layer;
the optical waveguide layer comprises a lithium niobate thin film layer and a lithium niobate ridge optical waveguide arranged on the lithium niobate thin film layer, the lithium niobate ridge optical waveguide forms a double-Y branch optical waveguide structure, the double-Y branch optical waveguide structure comprises a first Y branch optical waveguide, a transition optical waveguide and a second Y branch optical waveguide, and two branch ends of the first Y branch optical waveguide are positioned on the input end face of a double-Y branch optical waveguide phase modulator chip and are respectively used for connecting a low-coherence light source and a photoelectric detector; the beam combining end of the first Y-branch optical waveguide is connected with the beam combining end of the second Y-branch optical waveguide through a transition optical waveguide, and the two branch ends of the second Y-branch optical waveguide are positioned on the output end face of the double Y-branch optical waveguide phase modulator chip and are respectively used for connecting the two tail fiber ends of the polarization maintaining fiber ring; the transition optical waveguide is a curve waveguide; the modulation electrode is used for carrying out phase modulation on the optical signals of the two branch optical paths of the second Y-branch optical waveguide.
Further, the substrate is a quartz substrate, a silicon substrate or a lithium niobate substrate.
Further, the total thickness of the lithium niobate thin film layer and the lithium niobate ridge optical waveguide is 300-900 nm, and the thickness of the lithium niobate ridge optical waveguide is 150-450 nm.
Further, the manufacturing method of the optical waveguide layer is that a layer of lithium niobate thin film material with the thickness of 300-900 nm is firstly arranged on a silicon dioxide layer, then the lithium niobate thin film material in a partial area is etched downwards for 150-450 nm, the rest part of the upper part of the lithium niobate thin film material after etching forms a lithium niobate ridge optical waveguide with a double Y-branch structure, and the lower part of the lithium niobate thin film material is not etched, so that a lithium niobate thin film layer is formed.
Further, the refractive index difference between the lithium niobate thin film material and the protective layer material is 0.1-1.2.
Further, the modulation electrode is a push-pull modulation electrode.
Further, the minimum bend radius of the transition optical waveguide is greater than or equal to 10 μm.
Furthermore, the transition optical waveguide adopts a Fermat spiral structure.
The beneficial effects are that: in the invention, the transition optical waveguide adopts a curve structure, so that the radiation light formed by the optical signals transmitted in the two Y-branch waveguides only radiates into the external environment of the waveguide, and is not re-coupled into the other Y-branch optical waveguide, thereby effectively eliminating the crosstalk and noise problems formed by coupling of radiation modes in the optical path. In addition, the invention changes the traditional method of manufacturing the Y-branch optical waveguide on the lithium niobate substrate by adopting the diffusion type optical waveguide technology, bonds the substrate and the optical waveguide layer together through the silicon dioxide layer, so that the substrate and the optical waveguide layer are mutually separated, and the lithium niobate ridge optical waveguide is manufactured by etching, thereby increasing the refractive index difference between the lithium niobate ridge optical waveguide and the protective layer, further enhancing the binding capacity of light, greatly reducing the bending radius of the optical waveguide, further greatly reducing the double Y structure of the optical waveguide and the size of the transitional waveguide region, and realizing the miniaturization of the double Y-branch optical waveguide modulator.
Drawings
FIG. 1 is a schematic diagram of a prior art fiber optic gyroscope;
FIG. 2 is a schematic diagram of a conventional dual Y-branch optical waveguide phase modulator chip;
FIG. 3 is a schematic diagram of a preferred embodiment of a lithium niobate thin film dual Y-branch optical waveguide modulator of the present invention employing curvilinear optical waveguide connection;
fig. 4 is a schematic cross-sectional view of a first Y-branch optical waveguide.
Fig. 5 is a schematic cross-sectional view of a second Y-branch optical waveguide.
In the figure: 1. the phase modulator comprises a substrate, a silicon dioxide layer, a lithium niobate thin film layer, a protective layer, a modulating electrode, a double Y-branch optical waveguide phase modulator chip, an input end face, an output end face, a first Y-branch optical waveguide, a second Y-branch optical waveguide and a transition optical waveguide.
Detailed Description
In order to better understand the technical solution in the embodiments of the present invention and make the above objects, features and advantages of the embodiments of the present invention more comprehensible, the technical solution in the embodiments of the present invention is described in further detail below with reference to the accompanying drawings.
In the description of the present invention, unless otherwise specified and defined, it should be noted that the term "connected" should be interpreted broadly, and for example, it may be a mechanical connection or an electrical connection, or may be a connection between two elements, or may be a direct connection or may be an indirect connection through an intermediary, and it will be understood to those skilled in the art that the specific meaning of the term may be interpreted according to the specific circumstances.
As shown in fig. 3, 4 and 5, a preferred embodiment of the lithium niobate thin film dual Y-branch optical waveguide modulator of the present invention using a curved optical waveguide connection includes a dual Y-branch optical waveguide phase modulator chip 10, and an end face of one side of the dual Y-branch optical waveguide phase modulator chip 10 is an input end face 11, and an end face of the other side is an output end face 12. The dual-Y-branch optical waveguide phase modulator chip 10 comprises a substrate 1, wherein a silicon dioxide layer 2 is arranged on the substrate 1, and an optical waveguide layer made of a lithium niobate thin film material is arranged on the silicon dioxide layer 2, and the substrate 1 is preferably a silicon substrate because the substrate 1 and the optical waveguide layer are isolated through the silicon dioxide layer 2; of course, the substrate 1 may be a quartz substrate or a lithium niobate substrate.
The manufacturing method of the optical waveguide layer comprises the steps of firstly arranging a layer of lithium niobate thin film material with the thickness of 300-900 nm on a silicon dioxide layer 2, wherein the thickness of the lithium niobate thin film material is preferably 500nm; and then etching the lithium niobate thin film material in a part of the area downwards by 150-450 nm, wherein the etching thickness is preferably half of the thickness of the lithium niobate thin film material. The remaining part of the upper part of the lithium niobate thin film material after etching forms a lithium niobate ridge optical waveguide with a double Y-branch structure, and the lower part of the lithium niobate thin film material is not etched to form a lithium niobate thin film layer 3. The cross section of the lithium niobate ridge optical waveguide is preferably rectangular, but due to the limitation of the precision of the etching process, the cross section of the lithium niobate ridge optical waveguide is difficult to be strictly rectangular, and only the single film transmission requirement is required to be met. The lithium niobate ridge optical waveguide forms a double Y-branch optical waveguide structure including a first Y-branch optical waveguide 31, a transition optical waveguide 33, and a second Y-branch optical waveguide 32. The two branch ends of the first Y-branch optical waveguide 31 are located on the input end face 11 of the dual Y-branch optical waveguide phase modulator chip 10 and are respectively used for being connected with a low-coherence light source and a photoelectric detector, and preferably, the input end face 11 of the dual Y-branch optical waveguide phase modulator chip 10 is ground and polished, so that the two branch ends of the first Y-branch optical waveguide 31 are respectively connected with the corresponding ends (or the tail fibers connected with the corresponding ends) of the low-coherence light source and the photoelectric detector to form an optical path. The beam combining end of the first Y-branch optical waveguide 31 is connected with the beam combining end of the second Y-branch optical waveguide 32 through a transition optical waveguide 33, and two branch ends of the second Y-branch optical waveguide 32 are positioned on the output end face 12 of the dual Y-branch optical waveguide phase modulator chip 10 and are respectively used for connecting two tail fiber ends of the polarization maintaining fiber ring; the output end face 12 of the dual Y-branch optical waveguide phase modulator chip 10 is preferably ground and polished so as to be precisely connected with two pigtail ends of the polarization maintaining fiber ring to form an optical path.
The optical waveguide layer is provided with a protective layer 4, and the refractive index difference between the lithium niobate thin film material and the protective layer material is 0.1 to 1.2, preferably 0.7. The protective layer 4 is used for protecting the optical waveguide layer from physical damage, preventing the ridge optical waveguide layer from physical damage, and preventing other substances with refractive indexes higher than or close to that of lithium niobate from covering the surface of the lithium niobate ridge optical waveguide layer, so as to destroy or change the light limiting structure of the lithium niobate ridge optical waveguide layer, and cause normal transmission light to radiate out of the optical waveguide layer, so that the loss of the optical waveguide layer is increased, and the protective layer 4 can be made of a silicon dioxide oxide layer, and of course, can also be made of other materials meeting the refractive index requirement. Since the lithium niobate ridge optical waveguide is formed by etching, the refractive index difference between the lithium niobate ridge optical waveguide and the protective layer 4 can reach 0.1-1.2, compared with the optical waveguide structure formed by diffusion, the refractive index difference between the optical waveguide and the adjacent medium is greatly increased, so that the light binding capacity of the lithium niobate ridge optical waveguide is greatly enhanced, when the refractive index difference between the lithium niobate thin film material and the protective layer material is 1.2, the minimum bending radius of the transition optical waveguide 33 can meet the loss requirement of the optical waveguide by 10 μm, therefore, the transition optical waveguide 33 can adopt any curve structure meeting the bending radius requirement, and preferably adopts a Fermat spiral structure. The protective layer 4 is provided with a modulating electrode 5, and the modulating electrode 5 is used for modulating the phases of the optical signals of the two branch optical paths of the second Y-branch optical waveguide 32, preferably a push-pull modulating electrode.
In this embodiment, since the transition optical waveguide 33 has a curved structure, when the optical signal is transmitted in the first Y-branch optical waveguide 31 or the second Y-branch optical waveguide 32, the radiation light of the optical signal is only radiated into the external environment of the waveguide, and is not re-coupled into the other Y-branch optical waveguide, so that the crosstalk and noise problems caused by the coupling of the radiation mode in the optical path are effectively eliminated. Meanwhile, in the embodiment, the double Y-branch optical waveguide is manufactured by adopting a method of etching the ridge optical waveguide on the lithium niobate thin film material, the refractive index difference between the lithium niobate ridge optical waveguide and the protective layer 4 is increased, the light binding capacity of the optical waveguide is enhanced, the minimum bending radius of the optical waveguide can reach 10 mu m, compared with the prior art, the method has the advantages that (the requirement of the structure of the existing 'diffusion' -double Y-branch optical waveguide phase modulator chip 10 on the minimum bending radius of the optical waveguide is in the centimeter level), and therefore, the volume of the double Y-branch optical waveguide phase modulator chip 10 can be greatly reduced; and the double Y structure of the optical waveguide and the size of the transition waveguide area are greatly reduced, so that the miniaturization of the double Y branch optical waveguide phase modulator is realized.
When the optical waveguide phase modulator of this embodiment is used to manufacture an optical fiber gyroscope, only two branch ends of the first Y-branch optical waveguide 31 are required to be connected with a low-coherence light source and a photodetector respectively, the photodetector is connected with a signal processing circuit, the modulation electrode 5 is electrically connected with the signal processing circuit, and two branch ends of the second Y-branch optical waveguide 32 are required to be connected with two tail fiber ends of a polarization maintaining fiber ring respectively, so that miniaturization of the optical fiber gyroscope can be realized.
The undescribed portions of the invention are consistent with the prior art and are not described in detail herein.
The foregoing is only the embodiments of the present invention, and therefore, the patent scope of the invention is not limited thereto, and all equivalent structures made by the description of the invention and the accompanying drawings are directly or indirectly applied to other related technical fields, which are all within the scope of the invention.
Claims (4)
1. The lithium niobate thin film double-Y-branch optical waveguide modulator adopting curve optical waveguide connection comprises a double-Y-branch optical waveguide phase modulator chip, and is characterized in that the end face of one side of the double-Y-branch optical waveguide phase modulator chip is an input end face, and the end face of the other side is an output end face; the double Y-branch optical waveguide phase modulator chip comprises a substrate, wherein a silicon dioxide layer is arranged on the substrate, an optical waveguide layer made of a lithium niobate thin film material is arranged on the silicon dioxide layer, a protective layer is arranged on the optical waveguide layer, the refractive index of the protective layer material is smaller than that of the lithium niobate thin film material, and a modulation electrode is arranged on the protective layer;
the manufacturing method of the optical waveguide layer comprises the steps of firstly arranging a layer of lithium niobate thin film material with the thickness of 300-900 nm on a silicon dioxide layer, then downwards etching 150-450 nm on the lithium niobate thin film material in a partial area, forming a lithium niobate ridge optical waveguide with a double Y-branch structure on the left part of the upper part of the lithium niobate thin film material after etching, and forming a lithium niobate thin film layer on the lower part of the lithium niobate thin film material without etching;
the optical waveguide layer comprises a lithium niobate thin film layer and a lithium niobate ridge optical waveguide arranged on the lithium niobate thin film layer, the lithium niobate ridge optical waveguide forms a double-Y branch optical waveguide structure, the double-Y branch optical waveguide structure comprises a first Y branch optical waveguide, a transition optical waveguide and a second Y branch optical waveguide, and two branch ends of the first Y branch optical waveguide are positioned on the input end face of a double-Y branch optical waveguide phase modulator chip and are respectively used for connecting a low-coherence light source and a photoelectric detector; the beam combining end of the first Y-branch optical waveguide is connected with the beam combining end of the second Y-branch optical waveguide through a transition optical waveguide, and the two branch ends of the second Y-branch optical waveguide are positioned on the output end face of the double Y-branch optical waveguide phase modulator chip and are respectively used for connecting the two tail fiber ends of the polarization maintaining fiber ring; the transition optical waveguide is a curved waveguide, the transition optical waveguide adopts a Fermat spiral structure, the refractive index difference between the lithium niobate thin film material and the protective layer material is 1.2, and the minimum bending radius of the Fermat spiral structure is equal to 10 mu m; the modulation electrode is used for carrying out phase modulation on the optical signals of the two branch optical paths of the second Y-branch optical waveguide.
2. The lithium niobate thin film double-Y-branch optical waveguide modulator using curved optical waveguide connection according to claim 1, wherein the substrate is a quartz substrate, a silicon substrate, or a lithium niobate substrate.
3. The lithium niobate thin film double-Y-branch optical waveguide modulator connected by a curved optical waveguide according to claim 1, wherein the total thickness of the lithium niobate thin film layer and the lithium niobate ridge optical waveguide is 300 to 900nm, and the thickness of the lithium niobate ridge optical waveguide is 150 to 450nm.
4. The lithium niobate thin film double Y-branch optical waveguide modulator using a curved optical waveguide connection according to claim 1, wherein the modulation electrode is a push-pull modulation electrode.
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