CN112965270A - Lithium niobate thin film double Y branch optical waveguide modulator adopting curve optical waveguide connection - Google Patents
Lithium niobate thin film double Y branch optical waveguide modulator adopting curve optical waveguide connection Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/58—Turn-sensitive devices without moving masses
- G01C19/64—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
- G01C19/72—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams with counter-rotating light beams in a passive ring, e.g. fibre laser gyrometers
- G01C19/721—Details
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
Abstract
The invention discloses a lithium niobate thin-film double-Y-branch optical waveguide modulator adopting curved optical waveguide connection, which comprises a double-Y-branch optical waveguide phase modulator chip, wherein the double-Y-branch optical waveguide phase modulator chip comprises a substrate, a silicon dioxide layer, an optical waveguide layer and a protective layer are sequentially arranged on the substrate, and a modulation electrode is arranged on the protective layer; the optical waveguide layer comprises a lithium niobate thin film layer and a lithium niobate ridged optical waveguide with a double-Y branch optical waveguide structure, and the transition optical waveguide connecting the two Y branch optical waveguides is a curved waveguide. In the invention, the transition optical waveguide adopts a curve structure, thereby effectively eliminating the problems of crosstalk and noise caused by coupling of radiation modes in an optical path; in addition, the invention increases the refractive index difference between the lithium niobate ridge optical waveguide and the protective layer by changing the structure of the lithium niobate thin film optical waveguide chip, thereby enhancing the constraint capacity to light, greatly reducing the bending radius of the optical waveguide and realizing the miniaturization of the double Y-branch optical waveguide modulator.
Description
Technical Field
The invention relates to the field of optical waveguide phase modulators, in particular to a lithium niobate thin film double-Y branch optical waveguide modulator connected by adopting a curved optical waveguide.
Background
The optical fiber gyroscope is an angular velocity sensing instrument based on Sagnac phase shift effect, and has a series of advantages of all-solid-state structure, small volume, electromagnetic interference resistance, high precision, long service life and the like. As shown in fig. 1, the optical fiber gyroscope is composed of a low coherence light source, an optical fiber coupler, a Y waveguide phase modulator, a polarization maintaining optical fiber ring, a photodetector and a signal processing circuit, wherein optical elements are connected in a pigtail fusion mode to form a closed optical path, and the circuit part adopts a full digital closed loop detection scheme. When the polarization-maintaining optical fiber ring rotates at an angular rate omega relative to the inertial space, two lines of light waves transmitted in the positive and negative directions respectively experience different optical paths to generate a sagnac phase difference phi s, the signal processing circuit introduces a modulation signal on the Y waveguide phase modulator to counteract the sagnac phase difference phi s caused by the rotation of the optical fiber ring, and the angular rate information of the system rotating relative to the inertial space can be obtained by detecting the modulation signal.
In order to improve the optical path integration level of the fiber optic gyroscope and simplify the optical path adjustment process, a scheme of adopting a double-Y-branch optical waveguide phase modulator to replace a combination of an optical fiber coupler and a Y-waveguide phase modulator in an original optical path is provided in the industry. As shown in fig. 2, the double Y-branch optical waveguide phase modulator chip uses a lithium niobate wafer as a substrate, and forms a Y-branch optical waveguide near the light source end, a Y-branch optical waveguide near the polarization maintaining optical fiber ring end, a base waveguide connecting the two Y-branch optical waveguides, and a modulation electrode on the wafer surface by a microelectronic patterning process and a degenerate proton exchange optical waveguide preparation process.
However, when the double-Y-branch optical waveguide phase modulator is applied to a fiber optic gyroscope, the input light is split by approximately 3dB on the first Y-branch, wherein half of the optical power propagates along the middle base waveguide to reach the second Y-branch; the other half of the optical power forms an asymmetric mode, radiating into the lithium niobate substrate and re-coupling on the second branch (as shown by the dashed line in fig. 2), causing a parasitic phase difference between the two arms. The phase difference is very sensitive to temperature, crosstalk and noise are formed in an optical path, and zero offset stability of the fiber-optic gyroscope is affected.
The existing double-Y branch optical waveguide phase modulator mainly adopts a diffusion type optical waveguide technology (proton exchange technology/titanium diffusion technology) to manufacture the double-Y branch optical waveguide, because the refractive index difference delta n between a waveguide layer and a substrate layer is small and is generally only 0.01-0.04, the light binding capability is weak, the bending radius of the lithium niobate diffusion type optical waveguide is large (the waveguide loss is sharply increased due to the excessively small bending radius). Meanwhile, the bending radius of the lithium niobate diffusion type optical waveguide is larger, so that the size of the space occupied by the whole chip is greatly increased.
Disclosure of Invention
The invention aims to solve the technical problem of providing a lithium niobate thin film double-Y branch optical waveguide modulator which can eliminate optical path crosstalk and noise and has a small chip volume and adopts curved optical waveguide connection.
The technical scheme of the invention is as follows:
a lithium niobate thin-film double-Y branch optical waveguide modulator adopting curved optical waveguide connection comprises a double-Y branch optical waveguide phase modulator chip, wherein the end face of one side of the double-Y branch optical waveguide phase modulator chip is an input end face, and the end face of the other side of the double-Y branch optical waveguide phase modulator chip is an output end face; the double-Y-branch optical waveguide phase modulator chip comprises a substrate, wherein a silicon dioxide layer is arranged on the substrate, an optical waveguide layer made of a lithium niobate thin film material is arranged on the silicon dioxide layer, a protective layer is arranged on the optical waveguide layer, the refractive index of the protective layer material is smaller than that of the lithium niobate thin film material, and a modulation electrode is arranged on the protective layer;
the optical waveguide layer comprises a lithium niobate thin film layer and a lithium niobate ridge optical waveguide arranged on the lithium niobate thin film layer, the lithium niobate ridge optical waveguide forms a double Y-branch optical waveguide structure, the double Y-branch optical waveguide structure comprises a first Y-branch optical waveguide, a transition optical waveguide and a second Y-branch optical waveguide, and two branch ends of the first Y-branch optical waveguide are positioned on the input end surface of the double Y-branch optical waveguide phase modulator chip and are respectively used for connecting a low coherence light source and a photoelectric detector; the beam combining end of the first Y-branch optical waveguide is connected with the beam combining end of the second Y-branch optical waveguide through a transition optical waveguide, and the two branch ends of the second Y-branch optical waveguide are positioned on the output end surface of the double Y-branch optical waveguide phase modulator chip and are respectively used for connecting two tail fiber ends of the polarization-maintaining optical fiber ring; the transition optical waveguide is a curved waveguide; and the modulation electrodes are used for carrying out phase modulation on optical signals of two branch optical paths of the second Y-branch optical waveguide.
Further, the substrate is a quartz substrate, a silicon substrate or a lithium niobate substrate.
Furthermore, the total thickness of the lithium niobate thin film layer and the lithium niobate ridge optical waveguide is 300-900 nm, and the thickness of the lithium niobate ridge optical waveguide is 150-450 nm.
Further, the manufacturing method of the optical waveguide layer comprises the steps of firstly arranging a layer of lithium niobate thin film material with the thickness of 300-900 nm on the silicon dioxide layer, then etching the lithium niobate thin film material in a part of area downwards for 150-450 nm, forming a lithium niobate ridge optical waveguide with a double Y-branch structure on the rest part of the upper part of the lithium niobate thin film material after etching, and forming the lithium niobate thin film layer without etching the lower part of the lithium niobate thin film material.
Further, the difference between the refractive index of the lithium niobate thin film material and the refractive index of the protective layer material is 0.1-1.2.
Further, the modulation electrode is a push-pull modulation electrode.
Further, the minimum bend radius of the transition optical waveguide is greater than or equal to 10 μm.
Further, the transition optical waveguide adopts a fermat spiral structure.
Has the advantages that: in the invention, the transition optical waveguide adopts a curve structure, so that the radiation light formed by the optical signals transmitted in the two Y-branch optical waveguides can only be radiated to the external environment of the waveguide and can not be re-coupled into the other Y-branch optical waveguide, thereby effectively eliminating the problems of crosstalk and noise formed by the coupling of radiation modes in an optical path. In addition, the invention changes the traditional method of manufacturing Y-branch optical waveguide by adopting diffusion type optical waveguide technology on the lithium niobate substrate, the substrate and the optical waveguide layer are bonded together through the silicon dioxide layer, thereby the substrate and the optical waveguide layer are separated from each other, the lithium niobate ridge optical waveguide is manufactured in an etching mode, the refractive index difference between the lithium niobate ridge optical waveguide and the protective layer is increased, the constraint capacity to light is further enhanced, the bending radius of the optical waveguide is greatly reduced, the sizes of a double-Y structure and a transition waveguide area of the optical waveguide are further greatly reduced, and the miniaturization of the double-Y-branch optical waveguide modulator is realized.
Drawings
FIG. 1 is a schematic diagram of a prior art optical fiber gyroscope;
FIG. 2 is a schematic structural diagram of a conventional dual Y-branch optical waveguide phase modulator chip;
FIG. 3 is a schematic structural diagram of a preferred embodiment of a lithium niobate thin film dual Y-branch optical waveguide modulator connected by curved optical waveguides according to the present invention;
fig. 4 is a schematic cross-sectional view of the first Y-branch optical waveguide.
Fig. 5 is a schematic cross-sectional view of a second Y-branch optical waveguide.
In the figure: 1. the phase modulator comprises a substrate, 2 parts of a silicon dioxide layer, 3 parts of a lithium niobate thin film layer, 4 parts of a protective layer, 5 parts of a modulation electrode, 10 parts of a double Y-branch optical waveguide phase modulator chip, 11 parts of an input end face, 12 parts of an output end face, 31 parts of a first Y-branch optical waveguide, 32 parts of a second Y-branch optical waveguide and 33 parts of a transition optical waveguide.
Detailed Description
In order to make the technical solutions in the embodiments of the present invention better understood and make the above objects, features and advantages of the embodiments of the present invention more comprehensible, the technical solutions in the embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
In the description of the present invention, unless otherwise specified and limited, it is to be noted that the term "connected" is to be interpreted broadly, and may be, for example, a mechanical connection or an electrical connection, or a communication between two elements, or may be a direct connection or an indirect connection through an intermediate medium, and a specific meaning of the term may be understood by those skilled in the art according to specific situations.
As shown in fig. 3, 4 and 5, a preferred embodiment of the lithium niobate thin-film dual Y-branch optical waveguide modulator connected by using the curved optical waveguide according to the present invention includes a dual Y-branch optical waveguide phase modulator chip 10, where an end face on one side of the dual Y-branch optical waveguide phase modulator chip 10 is an input end face 11, and an end face on the other side is an output end face 12. The double-Y-branch optical waveguide phase modulator chip 10 comprises a substrate 1, wherein a silicon dioxide layer 2 is arranged on the substrate 1, an optical waveguide layer made of lithium niobate thin film material is arranged on the silicon dioxide layer 2, and the substrate 1 is preferably a silicon substrate as the substrate 1 and the optical waveguide layer are isolated by the silicon dioxide layer 2; of course, the substrate 1 may be a quartz substrate or a lithium niobate substrate.
The manufacturing method of the optical waveguide layer comprises the steps of firstly arranging a layer of lithium niobate thin film material with the thickness of 300-900 nm on the silicon dioxide layer 2, wherein the thickness of the lithium niobate thin film material is preferably 500 nm; and then, etching the partial lithium niobate thin film material downwards by 150-450 nm, wherein the etching thickness is preferably half of that of the lithium niobate thin film material. The remaining part of the upper part of the lithium niobate thin film material after etching forms a lithium niobate ridge optical waveguide with a double Y-branch structure, and the lower part of the lithium niobate thin film material is not etched to form a lithium niobate thin film layer 3. The cross section of the lithium niobate ridge optical waveguide is preferably rectangular, but due to the accuracy limitation of the etching process, the cross section of the lithium niobate ridge optical waveguide is difficult to be strictly rectangular, and the single-film transmission requirement is only required to be met. The lithium niobate ridge optical waveguide forms a double Y-branch optical waveguide structure including a first Y-branch optical waveguide 31, a transition optical waveguide 33, and a second Y-branch optical waveguide 32. The two branch ends of the first Y-branch optical waveguide 31 are located on the input end surface 11 of the dual Y-branch optical waveguide phase modulator chip 10, and are respectively used for connecting with the low coherence light source and the photodetector, and preferably, the input end surface 11 of the dual Y-branch optical waveguide phase modulator chip 10 is ground and polished, so that the two branch ends of the first Y-branch optical waveguide 31 are respectively and precisely connected with the corresponding ends of the low coherence light source and the photodetector (or tail fibers connected with the corresponding ends) to form an optical path. The beam combining end of the first Y-branch optical waveguide 31 is connected with the beam combining end of the second Y-branch optical waveguide 32 through a transition optical waveguide 33, and two branch ends of the second Y-branch optical waveguide 32 are located on the output end face 12 of the dual Y-branch optical waveguide phase modulator chip 10 and are respectively used for connecting two tail fiber ends of a polarization-maintaining optical fiber ring; the output end face 12 of the double-Y-branch optical waveguide phase modulator chip 10 is preferably ground and polished to be precisely connected with the two tail fiber ends of the polarization maintaining fiber ring to form an optical path.
And a protective layer 4 is arranged on the optical waveguide layer, and the difference between the refractive indexes of the lithium niobate thin film material and the protective layer material is 0.1-1.2, preferably 0.7. The protective layer 4 is used for protecting the optical waveguide layer from physical damage, and preventing the physical damage of the ridge-shaped optical waveguide and other substances with refractive indexes higher than or close to that of the lithium niobate from covering the surface of the lithium niobate ridge-shaped optical waveguide, so that the light limiting structure of the lithium niobate ridge-shaped optical waveguide is damaged or changed, light is emitted out of the optical waveguide in a normal transmission mode, the loss of the optical waveguide is increased, the protective layer 4 can be a silicon dioxide oxide layer, and of course, other materials meeting the requirement of the refractive index can be adopted. Because the lithium niobate ridge optical waveguide is formed by etching, the refractive index difference between the lithium niobate ridge optical waveguide and the protective layer 4 can reach 0.1-1.2, compared with an optical waveguide structure formed by diffusion, the refractive index difference between the optical waveguide and an adjacent medium is greatly increased, so that the light binding capability of the lithium niobate ridge optical waveguide is greatly enhanced, and when the refractive index difference between a lithium niobate thin film material and a protective layer material is 1.2, the minimum bending radius of the transition optical waveguide 33 is 10 μm, so that the loss requirement of the optical waveguide can be met, and therefore, the transition optical waveguide 33 can adopt a curve structure which can meet the bending radius requirement at will, and preferably adopts a Fermat spiral structure. The protective layer 4 is provided with a modulation electrode 5, and the modulation electrode 5 is used for performing phase modulation on optical signals of two branch optical paths of the second Y-branch optical waveguide 32, and preferably adopts a push-pull modulation electrode.
In this embodiment, since the transition optical waveguide 33 has a curved structure, when an optical signal is transmitted in the first Y-branch optical waveguide 31 or the second Y-branch optical waveguide 32, the radiation light is only radiated to the external environment of the waveguide, and is not re-coupled into another Y-branch optical waveguide, thereby effectively eliminating the crosstalk and noise problems caused by the radiation mode coupling in the optical path. Meanwhile, in the embodiment, the double-Y-branch optical waveguide is manufactured by etching the ridge optical waveguide on the lithium niobate thin film material, so that the refractive index difference between the lithium niobate ridge optical waveguide and the protective layer 4 is increased, the optical waveguide light binding capacity is enhanced, the minimum bending radius of the optical waveguide can reach 10 microns, and compared with the prior art, the double-Y-branch optical waveguide phase modulator chip is greatly reduced (the requirement of the existing diffusion type double-Y-branch optical waveguide phase modulator chip 10 structure on the minimum bending radius of the optical waveguide is in centimeter level), so that the volume of the double-Y-branch optical waveguide phase modulator chip 10 can be greatly reduced; and further, the double-Y structure of the optical waveguide and the size of the transition waveguide area are greatly reduced, and the miniaturization of the double-Y branch optical waveguide phase modulator is realized.
When the optical fiber gyroscope is manufactured by adopting the optical waveguide phase modulator of the embodiment, only two branch ends of the first Y-branch optical waveguide 31 are required to be connected with the low coherence light source and the photoelectric detector respectively, the photoelectric detector is connected with the signal processing circuit, the modulation electrode 5 is electrically connected with the signal processing circuit, and two branch ends of the second Y-branch optical waveguide 32 are connected with two tail optical fiber ends of the polarization maintaining optical fiber ring respectively.
The undescribed parts of the present invention are consistent with the prior art, and are not described herein.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures made by using the contents of the present specification and the drawings can be directly or indirectly applied to other related technical fields, and are within the scope of the present invention.
Claims (8)
1. A lithium niobate thin-film double Y-branch optical waveguide modulator adopting curved optical waveguide connection comprises a double Y-branch optical waveguide phase modulator chip, and is characterized in that the end surface of one side of the double Y-branch optical waveguide phase modulator chip is an input end surface, and the end surface of the other side of the double Y-branch optical waveguide phase modulator chip is an output end surface; the double-Y-branch optical waveguide phase modulator chip comprises a substrate, wherein a silicon dioxide layer is arranged on the substrate, an optical waveguide layer made of a lithium niobate thin film material is arranged on the silicon dioxide layer, a protective layer is arranged on the optical waveguide layer, the refractive index of the protective layer material is smaller than that of the lithium niobate thin film material, and a modulation electrode is arranged on the protective layer;
the optical waveguide layer comprises a lithium niobate thin film layer and a lithium niobate ridge optical waveguide arranged on the lithium niobate thin film layer, the lithium niobate ridge optical waveguide forms a double Y-branch optical waveguide structure, the double Y-branch optical waveguide structure comprises a first Y-branch optical waveguide, a transition optical waveguide and a second Y-branch optical waveguide, and two branch ends of the first Y-branch optical waveguide are positioned on the input end surface of the double Y-branch optical waveguide phase modulator chip and are respectively used for connecting a low coherence light source and a photoelectric detector; the beam combining end of the first Y-branch optical waveguide is connected with the beam combining end of the second Y-branch optical waveguide through a transition optical waveguide, and the two branch ends of the second Y-branch optical waveguide are positioned on the output end surface of the double Y-branch optical waveguide phase modulator chip and are respectively used for connecting two tail fiber ends of the polarization-maintaining optical fiber ring; the transition optical waveguide is a curved waveguide; and the modulation electrodes are used for carrying out phase modulation on optical signals of two branch optical paths of the second Y-branch optical waveguide.
2. The lithium niobate thin-film double Y-branch optical waveguide modulator adopting curvilinear optical waveguide connection according to claim 1, wherein the substrate is a quartz substrate, a silicon substrate, or a lithium niobate substrate.
3. The lithium niobate thin film dual Y-branch optical waveguide modulator adopting curved optical waveguide connection according to claim 1, wherein the total thickness of the lithium niobate thin film layer and the lithium niobate ridge optical waveguide is 300 to 900nm, and the thickness of the lithium niobate ridge optical waveguide is 150 to 450 nm.
4. The lithium niobate thin film double-Y-branch optical waveguide modulator adopting the curvilinear optical waveguide connection as claimed in claim 1, wherein the optical waveguide layer is manufactured by a method that a layer of lithium niobate thin film material with the thickness of 300-900 nm is firstly arranged on a silicon dioxide layer, then the lithium niobate thin film material in a partial region is etched downwards for 150-450 nm, the part left after the etching of the upper part of the lithium niobate thin film material forms a lithium niobate ridge optical waveguide with a double-Y-branch structure, and the lower part of the lithium niobate thin film material is not etched to form a lithium niobate thin film layer.
5. The lithium niobate thin-film double-Y-branch optical waveguide modulator adopting the curvilinear optical waveguide connection according to claim 1, wherein the difference between the refractive index of the lithium niobate thin-film material and the refractive index of the protective layer material is 0.1-1.2.
6. The lithium niobate thin-film double Y-branch optical waveguide modulator adopting curvilinear optical waveguide connection according to claim 1, wherein the modulation electrode is a push-pull modulation electrode.
7. The lithium niobate thin film dual Y-branch optical waveguide modulator of claim 1, wherein the transition optical waveguide has a minimum bend radius greater than or equal to 10 μ ι η.
8. The lithium niobate thin film dual Y-branch optical waveguide modulator of claim 7, wherein the transition optical waveguide is in a fermat spiral configuration.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114325933A (en) * | 2022-03-07 | 2022-04-12 | 之江实验室 | Lithium niobate thin film broadband mode filter based on graphene |
| CN117538985A (en) * | 2024-01-10 | 2024-02-09 | 合肥芯智华光子科技有限公司 | Film lithium niobate integrated optical engine |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0798229A (en) * | 1993-09-29 | 1995-04-11 | Japan Aviation Electron Ind Ltd | Optical fiber gyro |
| JP2003121806A (en) * | 2001-10-12 | 2003-04-23 | Nippon Telegr & Teleph Corp <Ntt> | Optical modulator |
| CN1648604A (en) * | 2005-02-05 | 2005-08-03 | 浙江大学 | Interference type silicon base chip optical gyroscope |
| US20050175271A1 (en) * | 2004-02-06 | 2005-08-11 | Fujitsu Limited | Optical modulator |
| US20080024786A1 (en) * | 2006-07-31 | 2008-01-31 | Honeywell International, Inc. | Fiber optic gyroscope having a silicon-based optical chip |
| JP2008026374A (en) * | 2006-07-18 | 2008-02-07 | Fujitsu Ltd | Optical waveguide, optical device, and method for manufacturing optical waveguide |
| US20090116781A1 (en) * | 2006-03-29 | 2009-05-07 | Sumitomo Osaka Cement Co., Ltd. | Optical Waveguide Device |
| US20090231686A1 (en) * | 2008-01-12 | 2009-09-17 | Robert Atkins | Multi-functional integrated optical waveguides |
| US20130170802A1 (en) * | 2012-01-03 | 2013-07-04 | Xyratex Technology Limited | Optical waveguide and a method for making an optical waveguide |
| CN103197375A (en) * | 2013-04-24 | 2013-07-10 | 中国电子科技集团公司第四十四研究所 | Method for generating line polarization with high degree of polarization at any angle in optical waveguide device |
| CN104931036A (en) * | 2015-07-08 | 2015-09-23 | 浙江大学 | Lithium-niobate-based hybrid integration fiber-optic gyroscope optical chip |
| CN105180917A (en) * | 2015-09-22 | 2015-12-23 | 浙江大学 | Silica-based hybrid integrated homotaxial fiber-optic gyroscope optical chip and preparing method thereof |
| CN108020939A (en) * | 2016-10-31 | 2018-05-11 | 天津领芯科技发展有限公司 | A kind of LiNbO_3 film QPSK optical modulators and its manufacture method |
| CN109298551A (en) * | 2018-11-28 | 2019-02-01 | 中国电子科技集团公司第四十四研究所 | A kind of high-speed electro-optic modulator and preparation method thereof based on lithium niobate thick film |
| US20190101392A1 (en) * | 2017-09-29 | 2019-04-04 | Gener8, LLC | Multilayer waveguide optical gyroscope |
| CN109579818A (en) * | 2018-12-12 | 2019-04-05 | 天津津航技术物理研究所 | A kind of preparation method of hybrid integrated optical fibre gyro optical chip |
| CN110609399A (en) * | 2019-08-05 | 2019-12-24 | 华南师范大学 | Folding silicon-lithium niobate hybrid integrated electro-optical modulator and preparation method thereof |
| CN111736370A (en) * | 2020-06-12 | 2020-10-02 | 南京中电芯谷高频器件产业技术研究院有限公司 | Thin-film lithium niobate-based integrated chip and preparation method thereof |
| US20200371286A1 (en) * | 2019-05-22 | 2020-11-26 | Kvh Industries, Inc. | Integrated Optical Polarizer and Method of Making Same |
-
2021
- 2021-02-05 CN CN202110158375.0A patent/CN112965270B/en active Active
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0798229A (en) * | 1993-09-29 | 1995-04-11 | Japan Aviation Electron Ind Ltd | Optical fiber gyro |
| JP2003121806A (en) * | 2001-10-12 | 2003-04-23 | Nippon Telegr & Teleph Corp <Ntt> | Optical modulator |
| US20050175271A1 (en) * | 2004-02-06 | 2005-08-11 | Fujitsu Limited | Optical modulator |
| CN1648604A (en) * | 2005-02-05 | 2005-08-03 | 浙江大学 | Interference type silicon base chip optical gyroscope |
| US20090116781A1 (en) * | 2006-03-29 | 2009-05-07 | Sumitomo Osaka Cement Co., Ltd. | Optical Waveguide Device |
| JP2008026374A (en) * | 2006-07-18 | 2008-02-07 | Fujitsu Ltd | Optical waveguide, optical device, and method for manufacturing optical waveguide |
| US20080024786A1 (en) * | 2006-07-31 | 2008-01-31 | Honeywell International, Inc. | Fiber optic gyroscope having a silicon-based optical chip |
| US20090231686A1 (en) * | 2008-01-12 | 2009-09-17 | Robert Atkins | Multi-functional integrated optical waveguides |
| US20130170802A1 (en) * | 2012-01-03 | 2013-07-04 | Xyratex Technology Limited | Optical waveguide and a method for making an optical waveguide |
| CN103197375A (en) * | 2013-04-24 | 2013-07-10 | 中国电子科技集团公司第四十四研究所 | Method for generating line polarization with high degree of polarization at any angle in optical waveguide device |
| CN104931036A (en) * | 2015-07-08 | 2015-09-23 | 浙江大学 | Lithium-niobate-based hybrid integration fiber-optic gyroscope optical chip |
| CN105180917A (en) * | 2015-09-22 | 2015-12-23 | 浙江大学 | Silica-based hybrid integrated homotaxial fiber-optic gyroscope optical chip and preparing method thereof |
| CN108020939A (en) * | 2016-10-31 | 2018-05-11 | 天津领芯科技发展有限公司 | A kind of LiNbO_3 film QPSK optical modulators and its manufacture method |
| US20190101392A1 (en) * | 2017-09-29 | 2019-04-04 | Gener8, LLC | Multilayer waveguide optical gyroscope |
| CN109298551A (en) * | 2018-11-28 | 2019-02-01 | 中国电子科技集团公司第四十四研究所 | A kind of high-speed electro-optic modulator and preparation method thereof based on lithium niobate thick film |
| CN109579818A (en) * | 2018-12-12 | 2019-04-05 | 天津津航技术物理研究所 | A kind of preparation method of hybrid integrated optical fibre gyro optical chip |
| US20200371286A1 (en) * | 2019-05-22 | 2020-11-26 | Kvh Industries, Inc. | Integrated Optical Polarizer and Method of Making Same |
| CN110609399A (en) * | 2019-08-05 | 2019-12-24 | 华南师范大学 | Folding silicon-lithium niobate hybrid integrated electro-optical modulator and preparation method thereof |
| CN111736370A (en) * | 2020-06-12 | 2020-10-02 | 南京中电芯谷高频器件产业技术研究院有限公司 | Thin-film lithium niobate-based integrated chip and preparation method thereof |
Non-Patent Citations (4)
| Title |
|---|
| ANTOINE BRIMONT等: "Low-Loss and Compact Silicon Rib Waveguide Bends", 《IEEE PHOTONICS TECHNOLOGY LETTERS》 * |
| JEROME LAPOINTE等: "Nonlinear increase, invisibility, and sign inversion of a localized fs-laser-induced refractive index change in crystals and glasses", 《LIGHT: SCIENCE & APPLICATIONS》 * |
| 区惟煦等: "弯光纤波导的允许曲率半径", 《北京邮电学院学报》 * |
| 孔瑞瑞: "单晶铌酸锂薄膜的光学常数以及Y分支波导的研究", 《中国知网硕士电子期刊》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114325933A (en) * | 2022-03-07 | 2022-04-12 | 之江实验室 | Lithium niobate thin film broadband mode filter based on graphene |
| CN117538985A (en) * | 2024-01-10 | 2024-02-09 | 合肥芯智华光子科技有限公司 | Film lithium niobate integrated optical engine |
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