CN109579818A - A kind of preparation method of hybrid integrated optical fibre gyro optical chip - Google Patents
A kind of preparation method of hybrid integrated optical fibre gyro optical chip Download PDFInfo
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- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/58—Turn-sensitive devices without moving masses
- G01C19/64—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
- G01C19/72—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams with counter-rotating light beams in a passive ring, e.g. fibre laser gyrometers
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Abstract
The invention belongs to semiconductor process technique fields, more particularly to a kind of preparation method of hybrid integrated optical fibre gyro optical chip, the chip includes substrate, light source, silicon substrate three-dB coupler, lithium niobate Y-branch phase-modulator, and signal sensor, silicon substrate three-dB coupler is based on silica-polyamine resin technology, including interconnected y branch waveguide, two 90 ° of circular arc waveguides, tapered transmission line and two straight wave guides, light input port of the wide end of tapered transmission line as optical chip, the light source face light input port, signal output port of the straight wave guide being connected with Y-branch as optical chip, the photosurface face signal output port of signal sensor, the straight wave guide being connected with 90 ° of circular arc waveguides is as optical communication port, it is coupled with the based waveguides end face of lithium niobate Y-branch phase-modulator 3 by waveguide Technique splicing is fixed.This invention removes optical fiber fusion welding point, have many advantages, such as that integrated level is high, small in size, low in energy consumption, performance is good, reliability and good environmental adaptability.
Description
Technical field
The invention belongs to semiconductor process technique fields, and in particular to a kind of system of hybrid integrated optical fibre gyro optical chip
Preparation Method.
Background technique
In the navigation of aircraft ship, missile guidance, satellite orientation, geodesy, astronomical telescope observation tracking, automobile
In dual-use many applications such as GPS system assisting navigation, automatic driving, need using small-sized, high reliability, inexpensively
Inertia measurement device.Optical fibre gyro be it is a kind of using Sagnac effect sensitivity rotation or turning rate all solid state inertia apparatus
Table, has that light weight, power consumptive province, at low cost, the service life is long, acceleration is insensitive, small in size, movement-less part and bias stabilization
Property good and scale factor error it is small the advantages that, have better application prospect than laser gyro or other electromechanical gyros.
However there are certain technological deficiencies for existing fiber gyro system: being made of some discrete components, respectively encapsulates, be
Volume of uniting is big；Optical fiber fusion welding point is more, is easy to break down, and system environments adaptability and reliability are poor；It is at high cost, it is unfavorable for work
Journeyization production: each discrete component will be with device pigtail coupling, and process is more and complicated, coupling efficiency is low, the repeated difficulty of system
To guarantee.In order to meet the fields such as space application to the more strict requirements such as volume, quality, power consumption, to small integrated light
The research for learning gyro has become inexorable trend.
Currently advanced interference optical fiber top light path system mainly include super-radiance light emitting diode, fiber coupler,
Lithium niobate multi-functional integrated optical Y waveguide modulator, fiber optic loop, photodetector, depend on lithium niobate multifunctional unit
Optical modulator chip, the phase-modulation required for realizing inertial measurement system and beam splitter function, but due to niobic acid
Lithium bending radius of waveguide is larger, and for tilt angle usually between 3 °~5 °, size is larger, and manufacture craft and semiconductor technology
Compatibility and its integrating with semiconductor photonic device become second nature, and aspect is also poor, and cost is also higher, limits optical fibre gyro
Further integration and miniaturization.
Summary of the invention
(1) technical problems to be solved
The technical problem to be solved by the present invention is how to provide a kind of miniaturization, integrated level high, high reliablity and low cost
Hybrid integrated optical fibre gyro optical chip preparation method.
(2) technical solution
In order to solve the above technical problems, the present invention provides a kind of preparation method of hybrid integrated optical fibre gyro optical chip,
Hybrid integrated optical fibre gyro optical chip 100 prepared by the preparation method includes: substrate 1, light source 2, silicon substrate three-dB coupler
3, lithium niobate Y-branch phase-modulator 4 and signal sensor 5；
The light source 2, silicon substrate three-dB coupler 3, lithium niobate Y-branch phase-modulator 4 and the mixing collection of photodetector 5
At on the base 1；
The lithium niobate Y-branch phase-modulator 4 is the waveguide of lithium niobate base proton exchange type；
The silicon substrate three-dB coupler 3 is based on silica-polyamine resin manufacturing technology, and substrate material is silicon, waveguide packet
Layer material is silica, and waveguide core layer material is the silica for mixing germanium；
The silicon substrate three-dB coupler 3 include an interconnected y branch waveguide 3-3, the one 90 ° of circular arc waveguide 3-4,
2nd 90 ° of circular arc waveguide 3-5, tapered transmission line 3-1, the first straight wave guide 3-2 and the second straight wave guide 3-6, one point of Y-branch 3-3
Branch is connected with the narrow end of tapered transmission line 3-1, light input port of the wide end of tapered transmission line 3-1 as optical chip, the light source 2
Face light input port, another branch of Y-branch 3-3 is connected with the first straight wave guide 3-2 to be exported as the signal of optical chip
Port, the photosurface face signal output port of signal sensor 5；The based waveguides of y branch waveguide 3-3 connect two Opposite direction connections
The one 90 ° of circular arc 3-4 and the 2nd 90 ° of circular arc 3-5, second 90 ° of circular arc 3-5 other end connect the one of the second straight wave guide 3-6
End, based waveguides end face of the other end of the second straight wave guide 3-6 as optical communication port, with lithium niobate Y-branch phase-modulator 4
Spliced by waveguide coupling technique and is fixed；Two branch ends of lithium niobate Y-branch phase-modulator 4 are respectively the first pigtail coupling
Port 6 and the second tail optical fiber port 7, the two sides of each branch are equipped with metal modulator electrode 8；
In the silicon substrate three-dB coupler 3, core refractive rate is greater than cladding index, core refractive rate and cladding index
Difference, preferably 0.75%~1.5%；
3 chip of three-dB coupler is parallelogram, and interior angle is 75 ± 0.5 °, and length is 12~20mm, width 7
~14mm, wherein silicon substrate with a thickness of 0.52~1mm, SiO2 covering with a thickness of 10~30 μm；SiO2:Ge sandwich layer it is transversal
Face is rectangle, length are as follows: 3~7 μm, width is 3~6.5 μm；
The substrate thickness of the lithium niobate Y-branch phase-modulator 4 is 0.5~0.98mm, waveguide core slightly thinner than silicon substrate
Layer cross section is rectangle, 4~7 μm long, and width is 3~5 μm, and lithium niobate Y-branch phase-modulator 4 is parallelogram, and internal angle beta is
80 ± 0.5 °, length is 1.5~2cm, and width is 2~3mm；
The substrate 1 is using silicon, AlN or other highly heat-conductive materials, and the substrate is rectangle, and length is 35~43mm, wide
Degree is 10~20mm, with a thickness of 0.52~1mm；
The radius of curvature of the one 90 ° of curved waveguide 3-4 and the one 90 ° of curved waveguide 3-5 is identical, is 2.5~5mm；
The wide end waveguide core layer cross section of the tapered transmission line 3-1 is rectangle, length are as follows: 6~12 μm, width is 4~6.5 μ
M, tapered transmission line length are as follows: 500~1000 μm；
First straight wave guide end face 1 of the three-dB coupler 3 and the 4 based waveguides end face of lithium niobate Y-branch modulator are excellent
Ultraviolet glue is selected to carry out splicing fixation；
The light source 2 is made of super-radiance light emitting diode SLD chip 9 and SLD carrier 10, and wherein SLD chip 9 tips upside down on
On SLD carrier 10, SLD carrier 10 is that SLD chip 9 provides mechanical support and electricity interlinkage；
The SLD carrier 10 is parallelogram, and interior angle γ is 6 ± 0.3 °, long: 2mm, wide: 1mm: being highly 3dB coupling
The sum of thickness and the thickness of SiO2 covering of device silicon substrate, control errors are within -3 μm；Phase is made on the SLD carrier 10
Metal pattern configuration is answered, as lead pad, while carrying out active being directed at coupling in SLD and three-dB coupler tapered transmission line 3-1
When, at least one end can be provided for SLD chip be electrically connected；
The photodetector 4 is made of photodiode chip 11 and detector carrier 12, wherein photodiode core
Piece 11 is face incident type InGaAs photodiode, is placed on detector carrier 12, can be by light by the way that carrier to be disposed vertically
Electric diode chip 11 is disposed vertically, and makes 11 photosurface face the first straight wave guide of three-dB coupler port 3- of photodiode chip
2, detector carrier 12 provides mechanical support, electricity interlinkage and operation ease simultaneously；
Specifically, the preparation method includes the following steps:
Step 1: according to said chip size design, be cut into substrate 1, the substrate of lithium niobate Y-branch phase-modulator 4 and
The silicon substrate of 3dB coupling 3；
Step 2: being combined using PECVD and ICP etching phase, one layer of SiO2 film is deposited on a silicon substrate, as buffering
Layer；Germanium SiO2 film is mixed in growth on the SiO2 film, with a thickness of the thickness of waveguide core layer；Exist through photoetching, etching technics
Sandwich layer waveguide pattern is formed on SiO2:Ge film；One layer of SiO2 film is being deposited above again, is annealed to obtain three-dB coupler；
Step 3: according to the graphic designs of above-mentioned lithium niobate Y-branch phase-modulator 4, using photoetching, proton exchange and moving back
Fire process makes y branch waveguide on lithium niobate base bottom；Again using photoetching process in the two sides of each branch of y branch waveguide
Make modulator electrode 8；
Step 4: polishing grinding is carried out to three-dB coupler 3 and Y waveguide modulator 4 waveguide input/output port；It is right
The another two side of Y waveguide modulator is metallized, and pyroelectricity and stray light are eliminated；
Step 5: the second straight wave guide of three-dB coupler end 3-6 and the straight wave guide end 4-1 of lithium niobate Y waveguide modulator are passed through
Waveguide coupling technique is fixed；
Step 6: the three-dB coupler 3 spliced and lithium niobate Y waveguide modulator 4 being bonded in substrate using chip mounter；
Step 7: according to the graphic designs of above-mentioned SLD carrier 10, SLD carrier 10 is processed, later in the positive wheat flour of SLD carrier 10
Make metal lead wire figure, 0.5~1 μm of metallic pattern thickness, the light using chip mounter by 10 back adhesive of SLD carrier in substrate
Source region；
Step 8: SLD chip 9 is tipped upside down on SLD carrier 10 using the mechanical arm of accurate adjustment frame, realization be electrically coupled and
Coarse alignment is powered on 10 lead district of SLD carrier in conjunction with probe station, so that SLD is worked, fine-tuned by active alignment method
SLD carrier 10 is aligned with 3 input waveguide of three-dB coupler, finally carries out heating cure conducting resinl；
Step 9: according to the explanation of above-mentioned detector carrier 12, detector carrier 12 is processed, in the positive wheat flour of detector carrier
Make metal lead wire figure, it is about 0.5~1 μm of metallic pattern thickness, then using accurate chip mounter that photodiode chip 11 is smart
It determines position and is adhered on detector carrier 12, guarantee that the center of photosurface away from the distance of detector carrier lower edge is 3dB coupling
The sum of thickness and the thickness of SiO2 covering of clutch silicon substrate；
Step 10: using accurate adjustment frame that detector carrier 12 vertical glue joint on the base 1, is passed through active alignment side
Method is directed at the photosurface of signal sensor 5 with the signal detection Waveguide end face of three-dB coupler 3, carries out heating cure later,
Hybrid integrated optical fibre gyro optical chip is made.
Wherein, it is fixed in the step 5 using ultraviolet glue.
Wherein, it uses thermal conductivity good in the step 6 and the conductive silver paste of good conductivity is as adhesive.
Wherein, SLD chip 9 is tipped upside down on SLD carrier 10 using the mechanical arm of accurate adjustment frame in the step 8, is adopted
Use conductive silver paste as adhesive.
Wherein, in the step 9 guarantee photosurface center away from the distance of detector carrier lower edge be three-dB coupler silicon
The sum of thickness and the thickness of SiO2 covering of substrate, control errors are in ± 10 μm.
(3) beneficial effect
The present invention is for miniaturization, the preparation of the hybrid integrated fiber gyro chip of the highly integrated design of FOG of photoelectricity
Method, using complete guided wave structure hybrid integrated optical circuit, by other optics in optical fibre gyro optical system in addition to fiber optic loop
Device includes light source, and signal sensor, three-dB coupler and Y waveguide modulator are integrated on same substrate,
The present invention is using silica-polyamine resin size is small, coupling efficiency is high, bending loss is smaller, transmission loss
Feature low, easy of integration, at low cost, by integrating two in the first y branch waveguide based waveguides in silicon substrate three-dB coupler
Second Y-branch based waveguides of itself the and lithium niobate Y waveguide modulator certain distance that is staggered is interconnected by 90 ° of circular arc waveguides, meets
Reciprocity requires and avoids influence of the first y branch waveguide substrate radiant light to the second y branch waveguide, furthermore silicon substrate dioxy
SiClx optical waveguide and lithium niobate waveguides mould field matching degree are high, with the low advantage of insertion loss；
Light source and detector can be integrated by design SLD carrier and detector carrier, improve light by the preparation method
Learn gyro erected optical system integrated level, keep optical fibre gyro overall structure more compact, thus improve optical fibre gyro reliability and
Environmental suitability.In addition, can carry out whole temperature control using highly heat-conductive material as the substrate of chip to chip using TEC, have
Conducive to light stability output and optical path coupled structure stability, the thermal adaptability of gyro is improved.
Optical chip of the invention meets optical fibre gyro miniaturization, the requirement of integrated, high reliability and reciprocity, compares
Optical device is independently of each other and for drive circuit system separation in traditional fiber gyro, optical chip integrated level of the invention
Height, mature preparation process, convenient for encapsulation.
Detailed description of the invention
Fig. 1 is the overall structure diagram of hybrid integrated optical fibre gyro optical chip.
Fig. 2 is the structural schematic diagram of silicon substrate three-dB coupler in hybrid integrated optical fibre gyro optical chip.
Fig. 3 is the structural schematic diagram of lithium niobate Y waveguide modulator in hybrid integrated optical fibre gyro optical chip.
Fig. 4 is the fiber-optic gyroscope light path system structure diagram based on hybrid integrated optical fibre gyro optical chip.
Main mark illustrates in figure: substrate 1, light source 2, silicon substrate three-dB coupler 3, lithium niobate Y-branch phase-modulator 4, letter
Number detector 5, the first pigtail coupling port 6 and the second tail optical fiber port 7, metal modulator electrode 8, SLD chip 9, SLD carrier 10,
Photodiode chip 11, detector carrier 12, fiber optic loop 13.
Specific embodiment
To keep the purpose of the present invention, content and advantage clearer, with reference to the accompanying drawings and examples, to of the invention
Specific embodiment is described in further detail.
To solve prior art problem, the present invention provides a kind of hybrid integrated optical fibre gyro optical chip, such as Fig. 1-Fig. 4 institute
Show, the hybrid integrated optical fibre gyro optical chip 100 includes: substrate 1, light source 2, silicon substrate three-dB coupler 3, lithium niobate Y-branch
Phase-modulator 4 and signal sensor 5；
The light source 2, silicon substrate three-dB coupler 3, lithium niobate Y-branch phase-modulator 4 and the mixing collection of photodetector 5
At on the base 1；
The lithium niobate Y-branch phase-modulator 4 is the waveguide of lithium niobate base proton exchange type；
The silicon substrate three-dB coupler 3 is based on silica-polyamine resin manufacturing technology, and substrate material is silicon, waveguide packet
Layer material is silica, and waveguide core layer material is the silica for mixing germanium；
The silicon substrate three-dB coupler 3 include an interconnected y branch waveguide 3-3, the one 90 ° of circular arc waveguide 3-4,
2nd 90 ° of circular arc waveguide 3-5, tapered transmission line 3-1, the first straight wave guide 3-2 and the second straight wave guide 3-6, one point of Y-branch 3-3
Branch is connected with the narrow end of tapered transmission line 3-1, light input port of the wide end of tapered transmission line 3-1 as optical chip, the light source 2
Face light input port, another branch of Y-branch 3-3 is connected with the first straight wave guide 3-2 to be exported as the signal of optical chip
Port, the photosurface face signal output port of signal sensor 5；The based waveguides of y branch waveguide 3-3 connect two Opposite direction connections
The one 90 ° of circular arc 3-4 and the 2nd 90 ° of circular arc 3-5, second 90 ° of circular arc 3-5 other end connect the one of the second straight wave guide 3-6
End, based waveguides end face of the other end of the second straight wave guide 3-6 as optical communication port, with lithium niobate Y-branch phase-modulator 4
Spliced by waveguide coupling technique and is fixed；Two branch ends of lithium niobate Y-branch phase-modulator 4 are respectively the first pigtail coupling
Port 6 and the second tail optical fiber port 7, the two sides of each branch are equipped with metal modulator electrode 8.
Wherein, in the silicon substrate three-dB coupler 3, core refractive rate is greater than cladding index, and core refractive rate and covering are rolled over
It is poor to penetrate rate, preferably 0.75%~1.5%.
Wherein, 3 chip of three-dB coupler is parallelogram, and interior angle is 75 ± 0.5 °, and length is 12~20mm, wide
Degree is 7~14mm, wherein silicon substrate with a thickness of 0.52~1mm, SiO2 covering with a thickness of 10~30 μm；SiO2:Ge sandwich layer
Cross section be rectangle, length are as follows: 3~7 μm, width be 3~6.5 μm；
The substrate thickness of the lithium niobate Y-branch phase-modulator 4 is 0.5~0.98mm, waveguide core slightly thinner than silicon substrate
Layer cross section is rectangle, 4~7 μm long, and width is 3~5 μm, and lithium niobate Y-branch phase-modulator 4 is parallelogram, and internal angle beta is
80 ± 0.5 °, length is 1.5~2cm, and width is 2~3mm.
Wherein, the substrate 1 is using silicon, AlN or other highly heat-conductive materials, and the substrate is rectangle, and length is 35~
43mm, width is 10~20mm, with a thickness of 0.52~1mm.
Wherein, the radius of curvature of the one 90 ° of curved waveguide 3-4 and the one 90 ° of curved waveguide 3-5 is identical, be 2.5~
5mm。
Wherein, the wide end waveguide core layer cross section of the tapered transmission line 3-1 be rectangle, length are as follows: 6~12 μm, width be 4~
6.5 μm, tapered transmission line length are as follows: 500~1000 μm.
Wherein, the first straight wave guide end face 1 of the three-dB coupler 3 and 4 based waveguides of lithium niobate Y-branch modulator
The preferred ultraviolet glue in end face carries out splicing fixation.
Wherein, the light source 2 is made of super-radiance light emitting diode SLD chip 9 and SLD carrier 10, wherein SLD chip 9
Tip upside down on SLD carrier 10, SLD carrier 10 is that SLD chip 9 provides mechanical support and electricity interlinkage, preferably thermal conductivity it is higher,
Good insulating and the preferable AlN ceramic of matched coefficients of thermal expansion or the silicon materials with insulating layer.
Wherein, the SLD carrier 10 is parallelogram, and interior angle γ is 6 ± 0.3 °, long: 2mm, wide: 1mm: to be highly
The sum of thickness and the thickness of SiO2 covering of three-dB coupler silicon substrate, control errors are within -3 μm；The SLD carrier 10
Upper production respective metal graphic structure, as lead pad, and meanwhile it is active right in SLD and three-dB coupler tapered transmission line 3-1 progress
When quasi- coupling, at least one end can be provided for SLD chip and be electrically connected.
Wherein, the photodetector 4 is made of photodiode chip 11 and detector carrier 12, wherein two pole of photoelectricity
Tube chip 11 is face incident type InGaAs photodiode, is placed on detector carrier 12, can by the way that carrier to be disposed vertically
Photodiode chip 11 is disposed vertically, 11 photosurface face the first straight wave guide of three-dB coupler end of photodiode chip is made
The effects of mouthful 3-2, detector carrier 12 provides mechanical support, electricity interlinkage and operation ease simultaneously, preferably thermal conductivity compared with
High, good insulating and the good AlN ceramic material of matched coefficients of thermal expansion.
In addition, the present invention also provides a kind of preparation method for being used to prepare above-mentioned hybrid integrated optical fibre gyro optical chip,
Described method includes following steps:
Step 1: according to said chip size design, be cut into substrate 1, the substrate of lithium niobate Y-branch phase-modulator 4 and
The silicon substrate of 3dB coupling 3；
Step 2: being combined using PECVD and ICP etching phase, one layer of SiO2 film is deposited on a silicon substrate, as buffering
Layer；Germanium SiO2 film is mixed in growth on the SiO2 film, with a thickness of the thickness of waveguide core layer；Exist through photoetching, etching technics
Sandwich layer waveguide pattern is formed on SiO2:Ge film；One layer of SiO2 film is being deposited above again, is annealed to obtain three-dB coupler；
Step 3: according to the graphic designs of above-mentioned lithium niobate Y-branch phase-modulator 4, using photoetching, proton exchange and moving back
Fire process makes y branch waveguide on lithium niobate base bottom；Again using photoetching process in the two sides of each branch of y branch waveguide
Make modulator electrode 8；
Step 4: polishing grinding is carried out to three-dB coupler 3 and Y waveguide modulator 4 waveguide input/output port；It is right
The another two side of Y waveguide modulator is metallized, and pyroelectricity and stray light are eliminated；
Step 5: the second straight wave guide of three-dB coupler end 3-6 and the straight wave guide end 4-1 of lithium niobate Y waveguide modulator are passed through
Waveguide coupling technique is fixed, and preferably ultraviolet glue is fixed；
Step 6: the three-dB coupler 3 spliced and lithium niobate Y waveguide modulator 4 are bonded in substrate using chip mounter,
It is preferred that thermal conductivity is good and the conductive silver paste of good conductivity is as adhesive；
Step 7: according to the graphic designs of above-mentioned SLD carrier 10, SLD carrier 10 is processed, later in the positive wheat flour of SLD carrier 10
Make metal lead wire figure, 0.5~1 μm of metallic pattern thickness, the light using chip mounter by 10 back adhesive of SLD carrier in substrate
Source region；
Step 8: being tipped upside down on SLD chip 9 on SLD carrier 10 using the mechanical arm of accurate adjustment frame, preferably conductive silver paste
As adhesive, with a thickness of 1~3 μm, realization is electrically coupled and coarse alignment, is powered in conjunction with probe station to 10 lead district of SLD carrier,
So that SLD is worked, SLD carrier 10 is fine-tuned by active alignment method and is aligned with 3 input waveguide of three-dB coupler, is finally carried out
Heating cure conducting resinl；
Step 9: according to the explanation of above-mentioned detector carrier 12, detector carrier 12 is processed, in the positive wheat flour of detector carrier
Make metal lead wire figure, it is about 0.5~1 μm of metallic pattern thickness, then using accurate chip mounter that photodiode chip 11 is smart
It determines position and is adhered on detector carrier 12, guarantee that the center of photosurface away from the distance of detector carrier lower edge is 3dB coupling
The sum of thickness and the thickness of SiO2 covering of clutch silicon substrate, control errors are in ± 10 μm；
Step 10: using accurate adjustment frame by detector carrier 12 vertical glue joint on the base 1, the preferred thermal conductivity of adhesive
Alright, by active alignment method, make the photosurface of signal sensor 5 and the signal detection Waveguide end face pair of three-dB coupler 3
Standard carries out heating cure later, and hybrid integrated optical fibre gyro optical chip is made.
Specific embodiment is described below.
Embodiment 1
The present embodiment referring to Fig.1-3,100 substrate 1 of hybrid integrated optical fibre gyro optical chip of the invention, light source 2,3dB
Coupler 3, lithium niobate Y-branch phase-modulator 4 and signal sensor 5；The light source 2, three-dB coupler 3, lithium niobate Y point
Branch phase-modulator 4 and 5 hybrid integrated of photodetector are on the base 1；
Lithium niobate Y-branch phase-modulator 4 is the waveguide of lithium niobate base proton exchange type, when being with transmission wavelength 1310nm
Example, single mode waveguide width is usually 5.5~6 μm；
Silicon substrate three-dB coupler 3 generallys use ion enhancingization based on mature silica-polyamine resin manufacturing technology
It learns vapor deposition PECVD technique and carries out SiO2 under-clad layer and core layer film growth, recycle photoetching and inductively coupled plasma
It etches ICP technology and forms silicon substrate three-dB coupler figure, then PECVD technique is recycled to deposit top covering, and annealed, preparation
Low-loss silicon substrate three-dB coupler out；
Referring to Fig. 2, silicon substrate three-dB coupler 3 includes an interconnected y branch waveguide 3-3, the one 90 ° of circular arc waveguide
3-4, the 2nd 90 ° of circular arc waveguide 3-5, tapered transmission line 3-1, the first straight wave guide 3-2, the second straight wave guide 3-6.Y branch waveguide 3-3's
One branch is connected with the narrow end of tapered transmission line 3-1, light input port of the wide end of tapered transmission line 3-1 as optical chip, institute
State 2 face light input port of light source；Another branch of y branch waveguide 3-3 is connected as optical chip with the first straight wave guide 3-2
Signal output port, the photosurface face signal output port of signal sensor；The based waveguides connection two of y branch waveguide 3-3
The one 90 ° of circular arc 3-4, second 90 ° of circular arc 3-5 of a Opposite direction connection, second 90 ° of circular arc 3-5 other ends connection second are straight
One end of waveguide 3-6, the other end of the second straight wave guide 3-6 is as optical communication port, with lithium niobate Y-branch phase-modulator 4
The end face based waveguides 4-1 by waveguide coupling technique splicing fix；Two branch ends of lithium niobate Y-branch phase-modulator 4 point
Not Wei the first pigtail coupling port 6 and the second tail optical fiber port 7, the two sides of each branch be equipped with metal modulator electrode 8.
The substrate material of silicon substrate three-dB coupler 3 is silicon, and the upper and lower clad material of waveguide is silica, waveguide core layer material
Suitable core refractive rate, core refractive rate and clad refractive can be obtained by adjusting the content of Ge for the silica for mixing germanium
Rate is poor, and preferably 0.75%~1.5%；The cross section of SiO2:Ge sandwich layer is generally rectangular, length are as follows: 3~7 μm, width is~6.5 μ
m；The thickness of SiO2 covering is usually 10-30 μm, light can be effectively prevent to leak out from covering；
In order to eliminate existing back-reflection between interface, while considering the optical transport law of refraction, generallys use end face inclination angle
Mode polishes die terminals face, and wherein silicon substrate three-dB coupler 3 is designed as parallelogram, and interior angle is 75 ± 0.5 °, length 12
~20mm, width are 7~14mm, and wherein the thickness of silicon substrate is usually 0.52~1mm；The song of 90 ° of curved waveguides of two of them
Rate radius is identical, usually 2.5~5mm, due to the minimum bending radius and core refractive rate of silicon substrate three-dB coupler circular arc waveguide
It is related to cladding index difference, it is generally the case that when refringence is 0.75%, minimum bending radius 5mm, refringence is
When 1.5%, minimum bending radius 2.5mm.
The substrate thickness of the lithium niobate Y-branch phase-modulator 4 is 0.5~0.98mm, waveguide slightly thinner than silicon substrate
Sandwich layer cross section is rectangle, 4~7 μm long, and width is 3~5 μm, and lithium niobate Y-branch phase-modulator 4 is parallelogram, internal angle beta
It is 80 ± 0.5 °, length is 1.5~2cm, and width is 2~3mm.
For the substrate 1 using silicon, AlN or other highly heat-conductive materials, the substrate is rectangle, and length is 35~43mm,
Width is 10~20mm, with a thickness of 0.52~1mm.
The wide end waveguide core layer cross section of the tapered transmission line 3-1 is rectangle, length are as follows: 6~12 μm, width is 4~6.5
μm, tapered transmission line length are as follows: 500~1000 μm.
The end face straight wave guide 3-6 of the silicon substrate three-dB coupler 3 and the 4 based waveguides 4- of lithium niobate Y-branch modulator
The preferred ultraviolet glue in 1 end face carries out splicing fixation.
Compared to other light sources, SLD has ultra-wide spectrum, low coherence, low ripple, high power and miniaturization, easy of integration
And the advantages that low cost, the preferred super-radiance light emitting diode of the light source 2, but due to silicon substrate top covering thickness is usually 10~
30 μm, SLD chip 9 generallys use InGaAsP quantum-well materials, and top covering is usually 2~3 μ m-thicks, conventional microelectronic technique
In flip-chip alignment method it is not applicable, and SLD chip 9 is usually only 100 μm thick, provides mechanical branch using SLD carrier 10 for SLD
Support, electricity interlinkage are simultaneously, moreover it is possible to the coarse alignment with the smooth input waveguide of silicon substrate three-dB coupler 3 are realized, in addition, SLD carrier 10 is preferred
Thermal conductivity is higher, good insulating and the preferable AlN ceramic of matched coefficients of thermal expansion or the silicon materials with insulating layer, it is therefore an objective to can will
The heat that SLD is generated quickly exports.
The SLD carrier 10 is parallelogram, and interior angle γ is 6 ± 0.5 °, long: 2mm, wide: 1mm, a height of three-dB coupler
The sum of thickness and the thickness of SiO2 covering of 3 silicon substrates, control errors are realized defeated with 3 light of silicon substrate three-dB coupler within -3 μm
Enter the coarse alignment of waveguide；Respective metal graphic structure is made on the SLD carrier 10, as lead pad, while in SLD2
When carrying out that high-precision is active be directed at coupling with the tapered transmission line 3-1 of three-dB coupler 3, it is electric at least one end to be provided for SLD chip 9
Learn connection.
The signal sensor 4 is made of photodiode chip 11 and detector carrier 12, wherein photodiode
Chip 11 is face incident type InGaAs photodiode, is placed on detector carrier 12, by the way that carrier to be disposed vertically and can incite somebody to action
Photodiode chip is disposed vertically, and makes 11 end photosurface face three-dB coupler the first straight wave guide 3-2 of photodiode chip
Mouthful, metal pattern configuration is made on detector carrier, is used for pin interconnection between photodiode chip and preamplifier, is visited
The effects of device carrier 12 provides mechanical support, electricity interlinkage and operation ease simultaneously is surveyed, is considered for heat dissipation and electricity, is visited
Survey the AlN ceramic material that the preferred thermal conductivity of device carrier is higher, good insulating and matched coefficients of thermal expansion are good.
The preparation method of the hybrid integrated optical fibre gyro optical chip 100, its step are as follows:
Step 1: according to said chip size design, be cut into substrate 1,4 substrate of lithium niobate Y-branch phase-modulator and
The silicon substrate of three-dB coupler 3；
Step 2: being combined using PECVD and ICP etching phase, one layer of SiO2 film is deposited on a silicon substrate, as buffering
Layer；Germanium SiO2 film is mixed in growth on the SiO2 film, with a thickness of the thickness of waveguide core layer；Exist through photoetching, etching technics
Sandwich layer waveguide pattern is formed on SiO2:Ge film；One layer of SiO2 film is being deposited above again, is annealed to obtain three-dB coupler
3；
Step 3: according to the graphic designs of lithium niobate Y-branch phase-modulator 4, using photoetching, proton exchange and lehr attendant
Skill makes y branch waveguide on lithium niobate base bottom；It is made again of photoetching process in the two sides of each branch of y branch waveguide
Modulator electrode 8；
Step 4: silicon substrate three-dB coupler 3 and lithium niobate Y waveguide modulator 4 waveguide input/output port is carried out
Polishing grinding；It metallizes to the another two side of Y waveguide modulator, eliminates pyroelectricity and stray light；
Step 5: silicon substrate three-dB coupler straight wave guide end 3-6 and the straight wave guide end 4-1 of lithium niobate Y waveguide modulator are passed through
It is active that Quasi-Waveguide coupling technique is fixed, and be adhesively fixed with ultraviolet glue, active alignment procedures: light is straight from three-dB coupler
Waveguide end 3-6 enters the based waveguides of lithium niobate Y waveguide modulator, and transmission light is received by light receiving element, three-dB coupler straight wave guide
3-6 is aligned in the x direction and the y direction with the straight wave guide 4-1 of lithium niobate Y waveguide modulator, maximizes light intensity output；
Step 6: the silicon substrate three-dB coupler 3 spliced and lithium niobate Y waveguide modulator 4 are bonded in by base using chip mounter
On bottom 1, preferably ultraviolet glue is as adhesive；
Step 7: according to the graphic designs of SLD carrier 10, SLD carrier 10 is processed, later in 10 front production gold of SLD carrier
Category lead figure, 0.5~1 μm of metallic pattern thickness, the light source using chip mounter by 10 back adhesive of SLD carrier on the base 1
Area；
Step 8: being tipped upside down on SLD chip 9 on SLD carrier 10 using the mechanical arm of accurate adjustment frame, preferably conductive silver paste
As adhesive, with a thickness of 1~3 μm, realization is electrically coupled and coarse alignment, is powered in conjunction with probe station to 10 lead district of SLD carrier,
So that SLD is worked, SLD is fine-tuned by active alignment method and is aligned with three-dB coupler input waveguide, heating cure is finally carried out
Conducting resinl；
Step 9: according to the design of above-mentioned detector carrier 12, detector carrier 12 is processed, in the positive wheat flour of detector carrier
Make metal lead wire figure, it is about 0.5~1 μm of metallic pattern thickness, then using accurate chip mounter that photodiode chip 11 is smart
It determines position and is adhered on detector carrier 12, guarantee that the center of photosurface away from the distance of detector carrier lower edge is 3dB coupling
The sum of thickness and the thickness of SiO2 covering of clutch silicon substrate, control errors are in ± 10 μm；
Step 10: using accurate adjustment frame by detector carrier 12 vertical glue joint on the base 1, the preferred thermal conductivity of adhesive
Alright, by active alignment method, make the photosurface of signal sensor 5 and the signal detection Waveguide end face pair of three-dB coupler 3
Standard carries out heating cure later, and hybrid integrated optical fibre gyro optical chip is made.
Referring to fig. 4, in 100 optical fibre gyro system 200 of silicon substrate-LN hybrid integrated optical chip of the invention, light source 2 is issued
Light silicon base chip three-dB coupler 3 is entered by light input end 3-1, through Y-branch, two Opposite direction connections the one 90 ° of circular arc 3-4,
One 90 ° of circular arc 3-5, the second straight wave guide 3-6 enter lithium niobate Y waveguide modulator 4, into the light wave of LN Y waveguide modulator 4
Enter fiber optic loop 13 from the first pigtail coupling port 4-2, the second tail optical fiber port 4-3 respectively and propagate in the opposite direction, returns
Light wave is then by the first straight wave guide 3-2 of silicon substrate three-dB coupler 3, arriving signal detector 5.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (5)
1. a kind of preparation method of hybrid integrated optical fibre gyro optical chip, which is characterized in that
Hybrid integrated optical fibre gyro optical chip (100) prepared by the preparation method includes: substrate (1), light source (2), silicon
Base three-dB coupler (3), lithium niobate Y-branch phase-modulator (4) and signal sensor (5)；
The light source (2), silicon substrate three-dB coupler (3), lithium niobate Y-branch phase-modulator (4) and photodetector (5) are mixed
Conjunction is integrated on substrate (1)；
The lithium niobate Y-branch phase-modulator (4) is the waveguide of lithium niobate base proton exchange type；
The silicon substrate three-dB coupler (3) is based on silica-polyamine resin manufacturing technology, and substrate material is silicon, waveguide covering
Material is silica, and waveguide core layer material is the silica for mixing germanium；
The silicon substrate three-dB coupler (3) includes an interconnected y branch waveguide (3-3), the one 90 ° of circular arc waveguide (3-
4), the 2nd 90 ° of circular arc waveguide (3-5), tapered transmission line (3-1), the first straight wave guide (3-2) and the second straight wave guide (3-6), Y-branch
One branch of (3-3) is connected with the narrow end of tapered transmission line (3-1), light of the wide end of tapered transmission line (3-1) as optical chip
Input port, light source (2) the face light input port, another branch and the first straight wave guide (3-2) phase of Y-branch (3-3)
Continuous cropping is the signal output port of optical chip, the photosurface face signal output port of signal sensor (5)；Y branch waveguide
The based waveguides of (3-3) connect the one 90 ° of circular arc (3-4) and the 2nd 90 ° of circular arc (3-5) of two Opposite direction connections, second 90 ° of circle
Arc (3-5) other end connects the one end of the second straight wave guide (3-6), and the other end of the second straight wave guide (3-6) is as optical transport end
Mouthful, it is fixed with the based waveguides end face of lithium niobate Y-branch phase-modulator (4) by the splicing of waveguide coupling technique；Lithium niobate Y-branch
Two branch ends of phase-modulator (4) are respectively the first pigtail coupling port (6) and the second tail optical fiber port (7), each branch
Two sides be equipped with metal modulator electrode (8)；
In the silicon substrate three-dB coupler (3), core refractive rate is greater than cladding index, and core refractive rate and cladding index are poor,
It is preferred that 0.75%~1.5%；
Three-dB coupler (3) chip be parallelogram, interior angle be 75 ± 0.5 °, length be 12~20mm, width be 7~
14mm, wherein silicon substrate with a thickness of 0.52~1mm, SiO2 covering with a thickness of 10~30 μm；The cross section of SiO2:Ge sandwich layer
For rectangle, length are as follows: 3~7 μm, width is 3~6.5 μm；
The substrate thickness of the lithium niobate Y-branch phase-modulator (4) is 0.5~0.98mm, waveguide core layer slightly thinner than silicon substrate
Cross section is rectangle, 4~7 μm long, and width is 3~5 μm, and lithium niobate Y-branch phase-modulator (4) is parallelogram, and internal angle beta is
80 ± 0.5 °, length is 1.5~2cm, and width is 2~3mm；
The substrate (1) uses silicon, AlN or other highly heat-conductive materials, and the substrate is rectangle, and length is 35~43mm, width
For 10~20mm, with a thickness of 0.52~1mm；
The one 90 ° of curved waveguide (3-4) is identical with the radius of curvature of the one 90 ° of curved waveguide (3-5), is 2.5~5mm；
The wide end waveguide core layer cross section of the tapered transmission line (3-1) is rectangle, length are as follows: 6~12 μm, width is 4~6.5 μm,
Tapered transmission line length are as follows: 500~1000 μm；
First straight wave guide end face 1 of the three-dB coupler (3) and described lithium niobate Y-branch modulator (4) the based waveguides end face are excellent
Ultraviolet glue is selected to carry out splicing fixation；
The light source (2) is made of super-radiance light emitting diode (SLD) chip (9) and SLD carrier (10), wherein SLD chip (9)
It tips upside down on SLD carrier (10), SLD carrier (10) is that SLD chip (9) provide mechanical support and electricity interlinkage；
The SLD carrier (10) is parallelogram, and interior angle γ is 6 ± 0.3 °, and long: 2mm, wide: 1mm: being highly three-dB coupler
The sum of thickness and the thickness of SiO2 covering of silicon substrate, control errors are within -3 μm；Phase is made on the SLD carrier (10)
Metal pattern configuration is answered, as lead pad, while carrying out active being directed at coupling in SLD and three-dB coupler tapered transmission line (3-1)
When, at least one end can be provided for SLD chip be electrically connected；
The photodetector (4) is made of photodiode chip (11) and detector carrier (12), wherein photodiode
Chip (11) is face incident type InGaAs photodiode, is placed on detector carrier (12), by the way that carrier to be disposed vertically
Photodiode chip (11) can be disposed vertically, keep photodiode chip (11) photosurface face three-dB coupler first straight
Waveguide port (3-2), detector carrier (12) provide mechanical support, electricity interlinkage and operation ease simultaneously；
Specifically, the preparation method includes the following steps:
Step 1: according to said chip size design, be cut into substrate (1), the substrate of lithium niobate Y-branch phase-modulator (4) and
3dB couples the silicon substrate of (3)；
Step 2: being combined using PECVD and ICP etching phase, one layer of SiO2 film is deposited on a silicon substrate, as buffer layer；?
Germanium SiO2 film is mixed in growth on the SiO2 film, with a thickness of the thickness of waveguide core layer；Through photoetching, etching technics in SiO2:Ge
Sandwich layer waveguide pattern is formed on film；One layer of SiO2 film is being deposited above again, is annealed to obtain three-dB coupler；
Step 3: according to the graphic designs of above-mentioned lithium niobate Y-branch phase-modulator (4), using photoetching, proton exchange and annealing
Technique makes y branch waveguide on lithium niobate base bottom；Use photoetching process in the two sides system of each branch of y branch waveguide again
Make modulator electrode (8)；
Step 4: polishing grinding is carried out to three-dB coupler (3) and Y waveguide modulator (4) waveguide input/output port；It is right
The another two side of Y waveguide modulator is metallized, and pyroelectricity and stray light are eliminated；
Step 5: the second straight wave guide of three-dB coupler end (3-6) and the straight wave guide end (4-1) of lithium niobate Y waveguide modulator are passed through
Waveguide coupling technique is fixed；
Step 6: the three-dB coupler spliced (3) and lithium niobate Y waveguide modulator (4) being bonded in substrate using chip mounter；
Step 7: according to the graphic designs of above-mentioned SLD carrier (10), processing SLD carrier (10), later in SLD carrier (10) front
Make metal lead wire figure, 0.5~1 μm of metallic pattern thickness, using chip mounter by SLD carrier (10) back adhesive in substrate
Light source region；
Step 8: SLD chip (9) is tipped upside down on SLD carrier (10) using the mechanical arm of accurate adjustment frame, realization be electrically coupled and
Coarse alignment is powered on SLD carrier (10) lead district in conjunction with probe station, so that SLD is worked, fine-tuned by active alignment method
SLD carrier (10) is aligned with three-dB coupler (3) input waveguide, finally carries out heating cure conducting resinl；
Step 9: according to the explanation of above-mentioned detector carrier (12), processing detector carrier (12), in the positive wheat flour of detector carrier
Make metal lead wire figure, about 0.5~1 μm of metallic pattern thickness, then uses accurate chip mounter by photodiode chip (11)
It is accurately positioned and is adhered on detector carrier (12), guarantee that the center of photosurface is away from the distance of detector carrier lower edge
The sum of thickness and the thickness of SiO2 covering of three-dB coupler silicon substrate；
Step 10: using accurate adjustment frame that detector carrier (12) vertical glue joint on substrate (1), is passed through active alignment side
Method is directed at the photosurface of signal sensor (5) and the signal detection Waveguide end face of three-dB coupler (3), carries out heating later solid
Change, hybrid integrated optical fibre gyro optical chip is made.
2. the preparation method of hybrid integrated optical fibre gyro optical chip as described in claim 1, which is characterized in that the step
It is fixed in 5 using ultraviolet glue.
3. the preparation method of hybrid integrated optical fibre gyro optical chip as described in claim 1, which is characterized in that the step
It uses thermal conductivity good in 6 and the conductive silver paste of good conductivity is as adhesive.
4. the preparation method of hybrid integrated optical fibre gyro optical chip as described in claim 1, which is characterized in that the step
SLD chip (9) is tipped upside down on SLD carrier (10) using the mechanical arm of accurate adjustment frame in 8, using conductive silver paste as bonding
Agent.
5. the preparation method of hybrid integrated optical fibre gyro optical chip as described in claim 1, which is characterized in that the step
Guarantee thickness and SiO2 covering of the center of photosurface away from the distance of detector carrier lower edge for three-dB coupler silicon substrate in 9
The sum of thickness, control errors are in ± 10 μm.
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