CN111897146A - Photonic crystal micro-ring modulator chip based on lithium niobate thin film - Google Patents
Photonic crystal micro-ring modulator chip based on lithium niobate thin film Download PDFInfo
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- CN111897146A CN111897146A CN202010966434.2A CN202010966434A CN111897146A CN 111897146 A CN111897146 A CN 111897146A CN 202010966434 A CN202010966434 A CN 202010966434A CN 111897146 A CN111897146 A CN 111897146A
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 60
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 230000003287 optical effect Effects 0.000 claims abstract description 46
- 238000005253 cladding Methods 0.000 claims abstract description 29
- 239000012792 core layer Substances 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000007547 defect Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000002861 polymer material Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000010354 integration Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- -1 lithium niobate ion Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- Crystallography & Structural Chemistry (AREA)
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract
The invention discloses a photonic crystal micro-ring modulator chip based on a lithium niobate film, which comprises a chip substrate, a chip lower cladding, a waveguide core layer and a chip upper cladding; the invention integrates an input optical waveguide, a photonic crystal micro-ring modulation structure and an output optical waveguide in a waveguide core layer, wherein the photonic crystal micro-ring modulation structure consists of a single through waveguide and a closed annular waveguide, the through waveguide is a two-dimensional linear defect photonic crystal waveguide structure, the annular waveguide is a two-dimensional circular lattice annular resonant cavity type photonic crystal waveguide structure, a modulation electrode is arranged on the annular waveguide, and the waveguide core layer is prepared from a lithium niobate thin film material. The modulator chip has the advantages of simple manufacturing process, easy integration and expansion, and good reliability and performance stability.
Description
Technical Field
The invention relates to the technical field of integrated optical electro-optical modulators, in particular to a photonic crystal micro-ring modulator chip based on a lithium niobate thin film.
Background
The optical modulator is used as a core device in multiple fields of high-speed optical communication, optical fiber sensing, spectral measurement, optical storage and the like at present, various devices based on the effects of electro-optic, acousto-optic, magneto-optic and the like have been developed, the amplitude or the phase of output light is regulated and controlled by the electro-optic modulator through the change of an external electric field, the electro-optic modulator has certain advantages in the aspects of energy consumption, speed, inheritance and the like, the application of the electro-optic modulator is the most extensive, and the problems in the aspects of high modulation efficiency and large modulation bandwidth are not well solved at present when the electro-optic modulator tends to be miniaturized in the prior art.
The lithium niobate crystal has a large electro-optic coefficient, good physical and mechanical properties, a high damage threshold, a wide light transmission range and relatively low material cost, and is most mature in application of an optical modulator. The traditional lithium niobate electro-optical modulator chip is mainly based on a lithium niobate material, and has the problems of large size and power consumption, low integration level, high manufacturing cost, difficult expansion and the like. With the development of the lithium niobate ion slicing thin film technology, the lithium niobate thin film provides a new direction for greatly improving the integration level and performance of devices due to the high refractive index difference, the micron-scale thin film thickness and the CMOS process compatibility.
At present, the structure of an electro-refractive index electro-optic modulator mainly realizes the change from phase to intensity through an interferometer (such as a Mach-Zehnder interferometer type) or a resonance device (such as a micro-ring resonant cavity type), and finally realizes the modulation of signals, wherein the micro-ring resonant cavity structure finishes the larger influence of the micro-refractive index change on the transmission characteristic through the resonance effect, has extremely compact structure, and can realize high modulation efficiency and very large modulation bandwidth. In addition, by means of the photonic local characteristics and the light-material interaction, the photonic crystal waveguide can control the light transmission under the micro-nano scale, and meanwhile, according to the enhancement effect theory of the photonic crystal waveguide slow light effect on the lithium niobate electro-optic effect, the modulation efficiency is greatly improved while the size of the device is reduced. For this reason, it is necessary to design a photonic crystal micro-ring modulator chip based on lithium niobate thin film, which has a sufficiently small size, a larger bandwidth and a higher modulation efficiency.
Disclosure of Invention
The invention aims to provide a photonic crystal micro-ring modulator chip based on a lithium niobate film aiming at the defects of the prior art, and the photonic crystal micro-ring modulator chip comprises a chip substrate, a chip lower cladding, a waveguide core layer and a chip upper cladding; the invention adopts a waveguide core layer integrated with an input optical waveguide, a photonic crystal micro-ring modulation structure and an output optical waveguide, wherein the photonic crystal micro-ring modulation structure consists of a single through waveguide and a closed annular waveguide, the through waveguide is a two-dimensional linear defect photonic crystal waveguide structure, the annular waveguide is a two-dimensional circular lattice annular resonant cavity type photonic crystal waveguide structure, a modulation electrode is arranged on the annular waveguide, light enters a straight waveguide of the photonic crystal micro-ring modulator from the input optical waveguide, enters the annular waveguide through a coupling area in the transmission process, the light forms resonance in the photonic crystal annular waveguide, phase change is introduced through the modulation electrode based on the lithium niobate material electro-optic effect to complete micro-ring resonance regulation and control, modulation of incident light is realized, and the modulated light is re-coupled into the straight waveguide through the coupling area and then is transmitted into the output straight waveguide. The waveguide core layer is made of a lithium niobate thin film material, the device size can be greatly reduced while the electro-optic coefficient is high, the integration level is improved, the electro-optic effect is enhanced by combining the slow light effect of the photonic crystal waveguide, the modulator works at low driving voltage, and the structure size is further reduced. The modulator chip has the advantages of simple manufacturing process, easy integration and expansion, and good reliability and performance stability.
The specific technical scheme for realizing the purpose of the invention is as follows:
a photonic crystal micro-ring modulator chip based on a lithium niobate film is characterized by comprising a chip substrate, a chip lower cladding, a waveguide core layer and a chip upper cladding;
the chip substrate, the chip lower cladding, the waveguide core layer and the chip upper cladding are sequentially arranged from bottom to top in layers;
the waveguide core layer is composed of an input optical waveguide, a photonic crystal micro-ring modulation structure and an output optical waveguide; the input port of the photonic crystal micro-ring modulation structure is connected with the output port of the input optical waveguide, and the output port of the photonic crystal micro-ring modulation structure is connected with the input port of the output optical waveguide;
the photonic crystal micro-ring modulation structure consists of a single straight-through waveguide and a closed annular waveguide, wherein the closed annular waveguide is provided with an inner side ring and an outer side ring, the single straight-through waveguide is provided with a band-shaped area, and an intersection coupling area is formed between the middle part of the band-shaped area on the single straight-through waveguide and the outer side ring of the closed annular waveguide;
the upper cladding of the chip is provided with a modulation electrode anode and a grounding electrode; and the positive electrode of the modulation electrode is connected to the inner side of the closed annular waveguide, and the grounding electrode is connected to the outer side of the closed annular waveguide.
The input optical waveguide and the output optical waveguide are ridge optical waveguides, the ridge optical waveguides are flat plate layers with ridge heights h1The height of the flat plate layer is h2Satisfies the condition (h)1+h2) Equal to the thickness H of the lithium niobate thin film.
The strip-shaped region of the single straight-through waveguide is of a two-dimensional linear defect photonic crystal waveguide structure, and the lattice arrangement is rectangular or triangular.
The inner ring and the outer ring of the closed annular waveguide are of a two-dimensional annular resonant cavity type photonic crystal waveguide structure, and the lattice arrangement is circular.
The chip substrate is made of lithium niobate or silicon; the lower cladding of the chip is made of silicon dioxide; the material of the on-chip cladding is silicon dioxide or an electro-optic polymer material; the waveguide core layer is made of a lithium niobate film, the thickness of the lithium niobate film is H, and the waveguide core layer comprises: h is more than or equal to 0.5 mu m and less than or equal to 1 mu m, so that the size of the waveguide core layer structure is ensured to be in the micro-nano level, and meanwhile, low-loss transmission of light can be realized.
The invention has the beneficial effects that:
1. the excellent electro-optic modulation characteristic of the lithium niobate material is fully utilized, the electro-optic modulator chip is prepared on the basis of the lithium niobate thin film platform, the volume can be reduced from the traditional cm magnitude to the micro-nano magnitude, the manufacturing process has CMOS process compatibility, other photonic devices can be easily subjected to monolithic integration, and the manufacturing is convenient;
2. by adopting a micro-ring type modulation structure and utilizing the electro-optic effect of the lithium niobate crystal and the optical resonance characteristic of the micro-cavity, the small-sized modulation characteristic with large bandwidth can be obtained;
3. the photonic crystal waveguide photonic local area characteristic is utilized to control the light path transmission to form a micro-ring resonant cavity type modulation structure, so that the size of a modulator chip is further reduced; in the photonic crystal waveguide, due to the fact that the group velocity of light is reduced, the energy density of an electromagnetic field in a substance structure is enhanced, and the space compression of optical energy is provided, so that the electro-optic effect which is the effect between light and the substance is enhanced, compared with a conventional structure, the photonic crystal waveguide with a smaller size can achieve a larger modulation effect, and the modulation efficiency is greatly enhanced.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural view of section A-A of FIG. 1;
FIG. 3 is a schematic diagram of a photonic crystal micro-ring modulation structure;
fig. 4 is a schematic structural view of a section B-B of fig. 1.
Detailed Description
Referring to fig. 1 and 2, the present invention includes a chip substrate 1, a chip lower cladding layer 2, a waveguide core layer 3, and a chip upper cladding layer 4;
the chip substrate 1, the chip lower cladding layer 2, the waveguide core layer 3 and the chip upper cladding layer 4 are sequentially arranged from bottom to top in a layer-by-layer mode.
Referring to fig. 1, 2 and 3, the waveguide core layer 3 is composed of an input optical waveguide 5, a photonic crystal micro-ring modulation structure 6 and an output optical waveguide 7; an input port of the photonic crystal micro-ring modulation structure 6 is connected with an output port of the input optical waveguide 5, and an output port of the photonic crystal micro-ring modulation structure 6 is connected with an input port of the output optical waveguide 7;
the photonic crystal micro-ring modulation structure 6 is composed of a single through waveguide 10 and a closed annular waveguide 9, wherein an inner side ring and an outer side ring are arranged on the closed annular waveguide 9, a band-shaped area is arranged on the single through waveguide 10, and a coupling area 12 of intersection is formed between the middle part of the band-shaped area on the single through waveguide 10 and the outer side ring of the closed annular waveguide 9.
Referring to fig. 1, 3 and 4, the upper cladding 4 of the chip is provided with a modulation electrode anode 11 and a ground electrode 13; and the modulation electrode anode 11 is connected to the inner side of the closed annular waveguide 9, and the grounding electrode 13 is connected to the outer side of the closed annular waveguide 9.
Referring to fig. 1, 2 and 4, the input optical waveguide 5 and the output optical waveguide 7 are ridge optical waveguides 8, the ridge optical waveguides 8 are slab layers with ridge heights h1The thickness of the flat layer is h2Satisfies the condition (h)1+h2) Equal to the thickness H of the lithium niobate thin film.
Referring to fig. 1 and 3, the strip region of the single through waveguide 10 is a two-dimensional linear defect photonic crystal waveguide structure, and the lattice arrangement is rectangular or triangular.
Referring to fig. 1 and 3, the inner ring and the outer ring of the closed ring waveguide 9 are two-dimensional ring resonator type photonic crystal waveguide structures, and the lattice arrangement is circular. A
Referring to fig. 1 and 2, the material of the chip substrate 1 is lithium niobate or silicon; the lower chip cladding layer 2 is made of silicon dioxide; the material of the on-chip cladding 4 is silicon dioxide or an electro-optic polymer material; the waveguide core layer 3 is made of a lithium niobate film, and the thickness of the lithium niobate film is H, wherein: h is more than or equal to 0.5 mu m and less than or equal to 1 mu m, so that the size of the waveguide core layer structure is ensured to be in the micro-nano level, and meanwhile, low-loss transmission of light can be realized.
Example (b):
referring to fig. 1 and 3, the photonic crystal micro-ring modulation structure 6 of the present invention is composed of a single through waveguide 10 and a closed ring waveguide 9, wherein the closed ring waveguide 9 is provided with an inner ring and an outer ring, the inner ring and the outer ring of the closed ring waveguide 9 are two-dimensional ring resonator type photonic crystal waveguide structures, and the lattice arrangement is circular; the single through waveguide 10 is provided with a strip-shaped region, the strip-shaped region of the single through waveguide 10 is of a two-dimensional linear defect photonic crystal waveguide structure, and the lattice arrangement is rectangular or triangular.
When the photonic crystal micro-ring modulation structure works, light enters a straight waveguide of the photonic crystal micro-ring modulation structure 6 from the input optical waveguide 5, enters the annular waveguide through the coupling region in the transmission process, the light forms resonance in the photonic crystal annular waveguide, phase change is introduced through the modulation electrode based on the lithium niobate electro-optic effect, micro-ring resonance regulation and control are completed, modulation of incident light is achieved, the modulated light is coupled into the straight waveguide again through the coupling region, and then the modulated light is transmitted into the output straight waveguide.
Referring to fig. 1 and 3, a coupling region 12 is formed where the middle of the strip region on the single through waveguide 10 intersects the outer ring of the closed ring waveguide 9.
Referring to fig. 1 and 4, the upper cladding 4 of the chip of the invention is provided with a modulation electrode anode 11 and a grounding electrode 13; and the modulation electrode anode 11 is connected to the inner side of the closed annular waveguide 9, and the grounding electrode 13 is connected to the outer side of the closed annular waveguide 9. The voltage V is applied to the positive electrode 11 of the modulation electrode, the grounding electrode 13 is grounded G, an electric field 14 is formed between the positive electrode 11 of the modulation electrode and the two electrodes of the grounding electrode 13, and the refractive index of the lithium niobate thin film photonic crystal waveguide with the electro-optic effect can be correspondingly changed, so that the phase of emergent light and the change of the resonance characteristic of the microcavity are changed, and the purpose of modulation is further achieved.
Referring to fig. 1 and 2, the input optical waveguide 5 and the output optical waveguide 7 of the waveguide core layer 3 of the present invention are ridge optical waveguides 8, the ridge optical waveguides 8 are formed by arranging ridge heights on a slab layer, and the film thickness is H; h = H1+h2(ii) a Wherein the thickness of the plate layer is h2(ii) a The height of ridge is h1；
The implementation steps of the invention are as follows:
1) selecting a single crystal lithium niobate film wafer as a waveguide core layer 3, and in order to reduce the transmission loss of the lithium niobate film waveguide, firstly completing proton exchange and annealing process of the lithium niobate film core layer;
2) manufacturing a first mask according to the design requirements of an input optical waveguide and an output optical waveguide, and performing dry etching process on the ridge optical waveguide 8 structure after photoetching to perform ICP inductively coupled plasma etching;
3) manufacturing a second mask according to the structural design requirement of the photonic crystal micro-ring modulation region, etching lattice holes after photoetching, and completing a single through waveguide 10 and a closed annular waveguide 9 by adopting a dry etching method or a focused ion beam etching method;
4) after the first two steps of structure etching are finished, depositing a silicon dioxide film or an electro-optic polymer material of the upper cladding 4 of the chip to ensure that the waveguide core layer 3 is well covered, and effectively preventing light from leaking from the upper cladding due to small stress of the upper cladding film;
5) and manufacturing a third mask according to the design requirements of the electrode structure, and carrying out metal electrode sputtering deposition to modulate the anode 11 and the grounding electrode 13 of the electrode after alignment.
And finishing the preparation of the photonic crystal micro-ring modulator chip based on the lithium niobate film.
When the invention is applied, light coupling is needed, and two conical lens optical fibers can be respectively aligned to the left port of the input optical waveguide and the right port of the output optical waveguide of the modulator chip to carry out low insertion loss coupling; or directly aligned and coupled with the light-emitting end face of the light-emitting chip.
Claims (8)
1. The photonic crystal micro-ring modulator chip based on the lithium niobate film is characterized by comprising a chip substrate (1), a chip lower cladding (2), a waveguide core layer (3) and a chip upper cladding (4);
the chip substrate (1), the chip lower cladding (2), the waveguide core layer (3) and the chip upper cladding (4) are sequentially arranged from bottom to top in a layer-by-layer manner;
the waveguide core layer (3) is composed of an input optical waveguide (5), a photonic crystal micro-ring modulation structure (6) and an output optical waveguide (7); an input port of the photonic crystal micro-ring modulation structure (6) is connected with an output port of the input optical waveguide (5), and an output port of the photonic crystal micro-ring modulation structure (6) is connected with an input port of the output optical waveguide (7);
the photonic crystal micro-ring modulation structure (6) consists of a single straight-through waveguide (10) and a closed annular waveguide (9), wherein an inner side ring and an outer side ring are arranged on the closed annular waveguide (9), a band-shaped area is arranged on the single straight-through waveguide (10), and an intersection coupling area (12) is formed between the middle part of the band-shaped area on the single straight-through waveguide (10) and the outer side ring of the closed annular waveguide (9);
the upper cladding (4) of the chip is provided with a modulation electrode anode (11) and a grounding electrode (13); and the positive electrode (11) of the modulation electrode is connected to the inner side of the closed annular waveguide (9), and the grounding electrode (13) is connected to the outer side of the closed annular waveguide (9).
2. The lithium niobate thin film-based photonic crystal micro-ring modulator chip of claim 1, wherein the input optical waveguide (5) and the output optical waveguide (7) are ridge optical waveguides (8), the ridge optical waveguides (8) are slab layers on which ridge heights are set, and the ridge heights are h1。
3. The lithium niobate thin film-based photonic crystal micro-ring modulator chip of claim 1, wherein the strip region of the single through waveguide (10) is a two-dimensional line defect photonic crystal waveguide structure with a lattice arrangement of rectangles or triangles.
4. The lithium niobate thin film-based photonic crystal micro-ring modulator chip according to claim 1, wherein the inner ring and the outer ring of the closed ring waveguide (9) are two-dimensional ring resonator type photonic crystal waveguide structures with a circular lattice arrangement.
5. The lithium niobate thin film-based photonic crystal micro-ring modulator chip according to claim 1, wherein the material of the chip substrate (1) is lithium niobate or silicon.
6. The lithium niobate thin film-based photonic crystal micro-ring modulator chip according to claim 1, wherein the material of the chip lower cladding (2) is silica.
7. The photonic crystal micro-ring modulator chip based on the lithium niobate thin film according to claim 1, wherein the waveguide core layer (3) is made of the lithium niobate thin film, and the thickness of the lithium niobate thin film is H, wherein: h is more than or equal to 0.5 mu m and less than or equal to 1 mu m.
8. The lithium niobate thin film-based photonic crystal micro-ring modulator chip according to claim 1, wherein the material of the on-chip cladding (4) is silica or an electro-optic polymer material.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112379539A (en) * | 2020-11-18 | 2021-02-19 | 联合微电子中心有限责任公司 | Silicon-based micro-ring modulator and modulation method thereof |
| CN113219436A (en) * | 2021-04-07 | 2021-08-06 | 天津大学 | Dispersion interference radar based on crystal micro-ring |
| CN113900285A (en) * | 2021-12-08 | 2022-01-07 | 杭州芯耘光电科技有限公司 | Technology insensitive modulator |
| CN114089473A (en) * | 2021-11-24 | 2022-02-25 | 深圳技术大学 | On-chip microcavity photonic integrated chip structure and preparation method thereof |
| CN114124225A (en) * | 2021-11-12 | 2022-03-01 | 天津津航技术物理研究所 | Tunable integrated photo-generated microwave source chip and system based on lithium niobate thin film |
| WO2024116618A1 (en) * | 2022-11-29 | 2024-06-06 | ソニーセミコンダクタソリューションズ株式会社 | Ring resonator, optical modulator, light source device, distance measurement device, and resonator device |
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| CN105372853A (en) * | 2015-12-15 | 2016-03-02 | 电子科技大学 | Micro-ring resonant cavity electro-optical modulator based on graphene/molybdenum disulfide heterojunction |
| CN105549229A (en) * | 2016-03-16 | 2016-05-04 | 电子科技大学 | Mid-infrared electrooptical modulator based on graphene-chalcogenide glass micro-ring resonant cavity |
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| WO2024116618A1 (en) * | 2022-11-29 | 2024-06-06 | ソニーセミコンダクタソリューションズ株式会社 | Ring resonator, optical modulator, light source device, distance measurement device, and resonator device |
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