CN114124225A - Tunable integrated photo-generated microwave source chip and system based on lithium niobate thin film - Google Patents
Tunable integrated photo-generated microwave source chip and system based on lithium niobate thin film Download PDFInfo
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- CN114124225A CN114124225A CN202111340205.0A CN202111340205A CN114124225A CN 114124225 A CN114124225 A CN 114124225A CN 202111340205 A CN202111340205 A CN 202111340205A CN 114124225 A CN114124225 A CN 114124225A
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 230000003287 optical effect Effects 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 238000005253 cladding Methods 0.000 claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000010354 integration Effects 0.000 claims description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000013307 optical fiber Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 230000001105 regulatory effect Effects 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/27—Arrangements for networking
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
Abstract
The application provides a tunable integrated photo-generated microwave source chip and a system based on a lithium niobate film, which comprises a substrate wafer, a lower cladding, the lithium niobate film and an upper cladding which are sequentially stacked from bottom to top; the lithium niobate thin film is provided with a lithium niobate optical waveguide; the lithium niobate optical waveguide comprises a spot-size conversion waveguide, a first straight waveguide, a first bent waveguide, a second straight waveguide, a second bent waveguide, a third straight waveguide and an optical microcavity waveguide which are connected in sequence; a first metal electrode is arranged on the upper cladding layer at a position corresponding to the first straight waveguide; the first metal electrode, the spot-size conversion waveguide and the first straight waveguide form a phase modulator together; a second metal electrode is arranged on the upper cladding layer at a position corresponding to the optical microcavity waveguide; the second metal electrode, the third straight waveguide and the optical microcavity waveguide together form a high-Q micro-resonator; and the lithium niobate thin film is also provided with a detector connected with the output end of the high Q micro-resonator. The method is beneficial to realizing the miniaturization and the engineering of the photo-generated microwave source.
Description
Technical Field
The application relates to the technical field of photoproduction microwave, in particular to a tunable integrated photoproduction microwave source chip and a system based on a lithium niobate thin film.
Background
The optical microwave technology is an optical technology for transmitting radio frequency signals in optical transmission media such as optical fibers by carrying microwave millimeter wave signals in optical signals, and the generation, conversion and modulation of the radio frequency signals are realized in an optical radio frequency system by regulating and controlling laser signals. The photo-generated microwave technology utilizes the advantages of low transmission loss, long transmission distance, interference resistance and the like of optical signals in optical fiber communication, overcomes the defects of low upper limit of frequency, large signal noise and the like of microwave millimeter waves generated by a traditional electrical mode, integrates the advantages of microwave and optical fiber communication, and becomes a research hotspot in the field of current optical fiber communication.
The existing photoproduction microwave source system adopts more discrete components and parts, and has the characteristics of complex structure and larger volume. Therefore, the application provides a tunable integrated photo-generated microwave source chip and a system based on a lithium niobate thin film.
Disclosure of Invention
The application aims to solve the problems and provide a tunable integrated photo-generated microwave source chip and a system based on a lithium niobate thin film.
In a first aspect, the application provides a tunable integrated photo-generated microwave source chip based on a lithium niobate thin film, which comprises a substrate wafer, a lower cladding, a lithium niobate thin film and an upper cladding which are sequentially stacked from bottom to top; the lithium niobate thin film is provided with a lithium niobate optical waveguide; the lithium niobate optical waveguide comprises a spot-size conversion waveguide, a first straight waveguide, a first bent waveguide, a second straight waveguide, a second bent waveguide, a third straight waveguide and an optical microcavity waveguide which are connected in sequence; a first metal electrode is arranged on the upper cladding layer at a position corresponding to the first straight waveguide; the first metal electrode, the spot-size conversion waveguide and the first straight waveguide together form a phase modulator; a second metal electrode is arranged on the upper cladding layer at a position corresponding to the optical microcavity waveguide; the second metal electrode, the third straight waveguide and the optical microcavity waveguide together form a high-Q microresonator; and a detector connected with the output end of the high Q micro resonator is also arranged on the lithium niobate film.
According to the technical solution provided by some embodiments of the present application, the first curved waveguide is arc-shaped, and the number of central angles subtended by the first curved waveguide is 90 °; the second curved waveguide is arc-shaped, and the central angle degree of the second curved waveguide is 90 degrees.
According to the technical solution provided by some embodiments of the present application, the first metal electrode adopts a traveling wave electrode structure for high-speed phase tuning of the phase modulator.
According to the technical solution provided by some embodiments of the present application, the second metal electrode adopts a lumped electrode structure for center frequency tuning of the high Q micro-resonator.
According to the technical scheme provided by some embodiments of the present application, the optical microcavity waveguide is a micro-ring or micro-disk structure.
According to the technical scheme provided by some embodiments of the present application, the detector is an InGaAs high-speed detector, and the method of end-face coupling or flip-chip vertical coupling is adopted for heterogeneous integration.
According to the technical solution provided by some embodiments of the present application, the second metal electrode is disposed on the third straight waveguide and/or the optical microcavity waveguide.
According to the technical scheme provided by some embodiments of the application, the thickness of the lithium niobate thin film is 300-1000 nm.
According to the technical solution provided by some embodiments of the present application, the upper cladding layer and the lower cladding layer are respectively a silica layer.
According to an aspect provided by certain embodiments of the present application, the substrate wafer is a surface-polished silicon wafer.
In a second aspect, the present application provides a tunable integrated photo-generated microwave source system including the above tunable integrated photo-generated microwave source chip based on a lithium niobate thin film, where the tunable integrated photo-generated microwave source system further includes: an electrical amplifier, a radio frequency coupler and a light source; light emitted by the light source is transmitted into the detector after passing through the phase modulator and the high Q micro-resonator, the detector converts an optical signal into a radio-frequency electric signal, and the radio-frequency electric signal is amplified by the electrical amplifier and then is input into the radio-frequency coupler; and the output end of the radio frequency coupler is used as the output end of the tunable integrated photo-generated microwave source system and is connected to the input end of the phase modulator.
Compared with the prior art, the beneficial effect of this application: according to the method, discrete optical elements (a phase modulator, a high Q micro-resonator and a detector) are integrated on a chip level, and the high Q micro-resonator is used for replacing a long optical fiber and a radio frequency filter in a traditional photo-generation microwave source system, so that the volume is remarkably reduced, and the miniaturization and the engineering of the photo-generation microwave source are favorably realized; and the optical microcavity of the high-Q microresonator adopts a lithium niobate thin-film material, so that the function of electric tuning can be realized.
Drawings
Fig. 1 is a schematic structural diagram of a tunable integrated photo-generated microwave source chip based on a lithium niobate thin film provided in embodiment 1 of the present application;
fig. 2 is a schematic cross-sectional view of a lithium niobate optical waveguide of a tunable integrated optical-generation microwave source chip based on a lithium niobate thin film provided in embodiment 1 of the present application;
fig. 3 is a schematic structural diagram of a tunable integrated photogeneration microwave source chip (optical microcavity waveguide is a micro-ring structure) based on a lithium niobate thin film provided in embodiment 1 of the present application;
fig. 4 is a schematic structural diagram of a tunable integrated photo-generated microwave source chip (optical microcavity waveguide is a microdisk structure) based on a lithium niobate thin film according to embodiment 2 of the present application;
fig. 5 is a schematic structural diagram of a tunable integrated optical microwave source system provided in embodiment 3 of the present application.
The text labels in the figures are represented as:
1. a base wafer; 2. a lower cladding; 3. a lithium niobate thin film; 4. a lithium niobate optical waveguide; 4-1, mode spot conversion waveguide; 4-2, a first straight waveguide; 4-3, a first curved waveguide; 4-4, a second straight waveguide; 4-5, a second curved waveguide; 4-6, a third straight waveguide; 4-7, optical microcavity waveguides; 5. an upper cladding layer; 6. a phase modulator; 7. a high Q microresonator; 8. a detector; 9. a first metal electrode; 10. a second metal electrode; 11. an electrical amplifier; 12. a radio frequency coupler; 13. a light source.
Detailed Description
The following detailed description of the present application is given for the purpose of enabling those skilled in the art to better understand the technical solutions of the present application, and the description in this section is only exemplary and explanatory, and should not be taken as limiting the scope of the present application in any way.
Example 1
Referring to fig. 1 to fig. 3, the present embodiment provides a tunable integrated optical microwave source chip based on a lithium niobate thin film, which includes a substrate wafer 1, a lower cladding layer 2, a lithium niobate thin film 3, and an upper cladding layer 5, which are sequentially stacked from bottom to top; wherein the base wafer 1 is a surface-polished silicon wafer, and the upper cladding layer 5 and the lower cladding layer 2 are respectively a silicon dioxide layer; the thickness of the lithium niobate thin film 3 is 300-1000 nm.
The lithium niobate thin film 3 is provided with a lithium niobate optical waveguide 4, namely the lithium niobate optical waveguide 4 is manufactured in the lithium niobate thin film 3 by adopting a dry etching process; as shown in fig. 3, the lithium niobate optical waveguide 4 comprises a spot-size conversion waveguide 4-1, a first straight waveguide 4-2, a first curved waveguide 4-3, a second straight waveguide 4-4, a second curved waveguide 4-5, a third straight waveguide 4-6 and an optical microcavity waveguide 4-7 which are connected in sequence; a first metal electrode 9 is arranged on the upper cladding 5 at a position corresponding to the first straight waveguide 4-2, namely the first metal electrode 9 is positioned on the upper surface of the upper cladding 5; the first metal electrode 9, the spot-size conversion waveguide 4-1 and the first straight waveguide 4-2 together form a phase modulator 6; a second metal electrode 10 is arranged at a position, corresponding to the optical microcavity waveguide 4-7, on the upper cladding 5, that is, the second metal electrode 10 is positioned on the upper surface of the upper cladding 5; the second metal electrode 10, the third straight waveguide 4-6 and the optical microcavity waveguide 4-7 together form a high-Q microresonator 7; in the embodiment, the optical microcavity waveguides 4-7 adopt a micro-ring structure; and a detector 8 connected with the output end of the high Q micro resonator 7 is also arranged on the lithium niobate thin film 3.
Further, the first curved waveguide 4-3 is arc-shaped, and the central angle degree of the arc-shaped first curved waveguide is 90 degrees; the second curved waveguide 4-5 is arc-shaped, and the central angle degree of the arc-shaped second curved waveguide is 90 degrees.
Further, the first metal electrode 9 adopts a traveling wave electrode structure for high-speed phase tuning of the phase modulator 6; the second metal electrode 10 employs a lumped electrode structure for center frequency tuning of the high Q microresonator 7.
Further, the detector 8 is an InGaAs high-speed detector, and is heterointegrated by using an end-face coupling or flip-chip vertical coupling method. The inverted vertical coupling method is characterized in that a detector is inverted on the lithium niobate thin film waveguide by utilizing refractive index matching adhesive, and because the refractive index of a photosensitive area of the detector is larger than that of a lithium niobate thin film waveguide layer, light in the lithium niobate thin film waveguide can be coupled into the photosensitive layer of the detector in an evanescent wave coupling mode.
Optionally, the second metal electrode 10 is disposed on the third straight waveguide 4-6 and/or the optical microcavity waveguide 4-7.
When the optical microcavity micro-cavity waveguide is used, a light beam sequentially passes through the phase modulator 6, the high-Q micro-resonator 7 and the detector 8, specifically, the light beam sequentially passes through the spot-size conversion waveguide 4-1, the first straight waveguide 4-2, the first curved waveguide 4-3, the second straight waveguide 4-4, the second curved waveguide 4-5 and the third straight waveguide 4-6, enters the optical microcavity waveguide 4-7 of the micro-ring structure, and then enters the detector 8 through the output end of the optical microcavity waveguide 4-7.
According to the tunable integrated photo-generated microwave source chip based on the lithium niobate film, discrete optical elements are integrated on a chip level, and a high-Q micro-resonator is used for replacing a long optical fiber and a radio frequency filter in a traditional photo-generated microwave source system, so that the volume is remarkably reduced, and the miniaturization and the engineering of a photo-generated microwave source are favorably realized; the optical microcavity of the high-Q microresonator is made of a lithium niobate thin-film material, so that the function of electric tuning can be realized; for the realization of the electric tuning function, specifically, because the lithium niobate thin film has an electro-optic effect, the second metal electrode is arranged on the optical microcavity waveguide and adopts a lumped electrode structure, so that the lithium niobate thin film can be used for tuning the center frequency of the high-Q micro-resonator, specifically, the refractive index of the lithium niobate thin film is changed by adjusting the voltage loaded on the second metal electrode, and further the resonance wavelength is changed, thereby realizing the electric tuning function.
Example 2
The embodiment provides a tunable integrated photo-generated microwave source chip based on a lithium niobate thin film, which is different from embodiment 1 in that: in the embodiment, the optical microcavity waveguides 4-7 adopt a micro-ring structure, and in the embodiment, the optical microcavity waveguides 4-7 adopt a micro-disk structure, as shown in fig. 4.
Example 3
Referring to fig. 5, the present embodiment provides a tunable integrated photogeneration microwave source system based on a lithium niobate thin film, which includes the tunable integrated photogeneration microwave source chip based on a lithium niobate thin film as described in embodiment 1, and further includes an electrical amplifier 11, a radio frequency coupler 12, and a light source 13; wherein the light source 11 is arranged close to the phase modulator 6, in particular close to the spot-conversion waveguide 4-1 of the phase modulator 6; the electrical amplifier 11 is a GaAs low-noise radio frequency amplifier, and the noise coefficient of the electrical amplifier is less than or equal to 2; the radio frequency coupler 12 is a GaAs radio frequency coupler, and the coupling coefficient of the radio frequency coupler is 15-20 dB.
When the tunable integrated optical microwave source system based on the lithium niobate thin film provided in the embodiment of the present application is used, light emitted by the light source 13 firstly enters the phase modulator 6 in the lithium niobate thin film chip from the spot-size conversion waveguide 4-1, then enters the optical microcavity waveguide 4-7 of the high Q microresonator 7 through the first straight waveguide 4-2, the first curved waveguide 4-3, the second straight waveguide 4-4, the second curved waveguide 4-5 and the third straight waveguide 4-6, an optical signal output from the high Q microresonator 7 is converted into a radio-frequency electrical signal by the detector 8, and the radio-frequency electrical signal is amplified by the electrical amplifier 11 and then enters the radio-frequency coupler 12; the signal is divided into two paths after passing through the radio frequency coupler 12, wherein one path is input into the phase modulator 6 to form a loop, when the loop gain is larger than 1, oscillation occurs, and finally, a stable microwave signal is output through the other path of oscillation of the radio frequency coupler 13.
The tunable integrated photo-generated microwave source system based on the lithium niobate film adopts the phase modulator to be connected in series with the integrated high Q micro-resonator and is integrated with the InGaAs type detector in a chip-level mixing way, utilizes the photon filtering and time delay functions of the high Q micro-resonator to replace an intensity modulator, a long optical fiber and an electric radio frequency filter in the traditional photo-generated microwave source system, realizes the conversion from the phase modulator to the intensity modulation, and feeds back the intensity modulator to the phase modulator through an electric amplifier and a radio frequency coupler to form an oscillation loop, thereby forming the integrated photo-generated microwave source. If the gain of the oscillation loop is higher than the loss, a stable microwave resonance signal output is generated, and the resonance frequency is determined by the resonance frequency of the high-Q micro-resonator. By controlling the voltage applied to second metal electrode 10 on high Q microresonator 7, the resonant frequency of the high Q microresonator can be tuned, resulting in a tunable microwave signal generated by the optical microwave source.
The tunable integrated photo-generated microwave source system based on the lithium niobate film provided by the invention adopts the lithium niobate film photon integration and heterogeneous integration technology to carry out single-chip integration on the phase modulator, the high Q micro-resonator and the detector, overcomes the defect of discrete device composition in the traditional photo-generated microwave source, improves the system integration level and miniaturization, solves the problem of poor reliability of the long optical fiber photo-generated microwave source in the prior art, improves the miniaturization and engineering level of the photo-generated microwave source, and meets the development requirements of a microwave photon radar system.
The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. The foregoing is only a preferred embodiment of the present application, and it should be noted that there are no specific structures which are objectively limitless due to the limited character expressions, and it will be apparent to those skilled in the art that a plurality of modifications, decorations or changes can be made without departing from the principle of the present invention, and the technical features mentioned above can be combined in a suitable manner; such modifications, variations, combinations, or adaptations of the invention in other instances, which may or may not be practiced, are intended to be within the scope of the present application.
Claims (10)
1. A tunable integrated photo-generated microwave source chip based on a lithium niobate film is characterized by comprising a substrate wafer (1), a lower cladding (2), a lithium niobate film (3) and an upper cladding (5) which are sequentially stacked from bottom to top; the lithium niobate thin film (3) is provided with a lithium niobate optical waveguide (4); the lithium niobate optical waveguide (4) comprises a spot-size conversion waveguide (4-1), a first straight waveguide (4-2), a first bent waveguide (4-3), a second straight waveguide (4-4), a second bent waveguide (4-5), a third straight waveguide (4-6) and an optical microcavity waveguide (4-7) which are connected in sequence; a first metal electrode (9) is arranged on the upper cladding (5) at a position corresponding to the first straight waveguide (4-2); the first metal electrode (9), the spot-size conversion waveguide (4-1) and the first straight waveguide (4-2) together form a phase modulator (6); a second metal electrode (10) is arranged on the upper cladding (5) at a position corresponding to the optical microcavity waveguide (4-7); the second metal electrode (10), the third straight waveguide (4-6) and the optical microcavity waveguide (4-7) together form a high Q microresonator (7); and a detector (8) connected with the output end of the high Q micro resonator (7) is also arranged on the lithium niobate film (3).
2. The tunable integrated photogeneration microwave source chip based on the lithium niobate thin film as claimed in claim 1, wherein the first curved waveguide (4-3) is in the shape of an arc, and the angle of the corresponding center of the arc is 90 °; the second curved waveguide (4-5) is arc-shaped, and the central angle degree of the second curved waveguide is 90 degrees.
3. The tunable integrated photogenerated microwave source chip based on lithium niobate thin film as claimed in claim 1, characterized in that the first metal electrode (9) adopts a traveling wave electrode structure for high-speed phase tuning of the phase modulator (6).
4. The tunable integrated optical-generated microwave source chip based on lithium niobate thin film as claimed in claim 1, characterized in that the second metal electrode (10) adopts a lumped electrode structure for center frequency tuning of the high Q microresonator (7).
5. The tunable integrated photogenerated microwave source chip based on the lithium niobate thin film as claimed in claim 1, wherein the optical microcavity waveguide (4-7) is of a micro-ring or micro-disk structure.
6. The tunable integrated photogenerated microwave source chip based on the lithium niobate thin film as claimed in claim 1, wherein the detector (8) is an InGaAs high-speed detector, and the heterogeneous integration is performed by adopting an end-face coupling or flip-chip vertical coupling method.
7. The tunable integrated photogenerated microwave source chip based on lithium niobate thin film according to claim 1, characterized in that the second metal electrode (10) is arranged on the third straight waveguide (4-6) and/or the optical microcavity waveguide (4-7).
8. The tunable integrated photogeneration microwave source chip based on the lithium niobate thin film as claimed in claim 1, wherein the thickness of the lithium niobate thin film (3) is 300-1000 nm.
9. The tunable integrated photogenerated microwave source chip based on lithium niobate thin film according to claim 1, characterized in that the upper cladding layer (5) and the lower cladding layer (2) are respectively silicon dioxide layers; the base wafer (1) is a surface-polished silicon wafer.
10. A tunable integrated photogenerated microwave source system comprising the lithium niobate thin film based tunable integrated photogenerated microwave source chip of any one of claims 1 to 9, further comprising: an electrical amplifier (11), a radio frequency coupler (12) and a light source (13); light emitted by the light source (13) is transmitted into the detector (8) after passing through the phase modulator (6) and the high Q micro-resonator (7), the detector (8) converts an optical signal into a radio-frequency electric signal, and the radio-frequency electric signal is amplified by the electrical amplifier (11) and then is input into the radio-frequency coupler (12); the output end of the radio frequency coupler (12) is used as the output end of the tunable integrated optical microwave source system and is connected to the input end of the phase modulator (6).
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