CN1727928A - Silicon optical waveguide on polymer - Google Patents
Silicon optical waveguide on polymer Download PDFInfo
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- CN1727928A CN1727928A CN 200510050878 CN200510050878A CN1727928A CN 1727928 A CN1727928 A CN 1727928A CN 200510050878 CN200510050878 CN 200510050878 CN 200510050878 A CN200510050878 A CN 200510050878A CN 1727928 A CN1727928 A CN 1727928A
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Abstract
A silicon light waveguide on polymer consists of top limitation layer, silicon core layer, polymer bottom limitation layer and substrate. The silicon core layer can be form of flat, ridge, inverse ridge, top and bottom ridge or strip.
Description
Technical field
The present invention relates to optical waveguide, particularly relate to a kind of silicon optical waveguide on polymer.
Background technology
The important development direction of the technical photon technology of integrated photon.Adopt the integrated photon technology, can develop the photonic device with various functions of advantages such as having superior performance, compact conformation, volume are little, in applications such as optical communication, optical information processing, light sensing, important use is arranged all.In the integrated photon technology, optical waveguide is the basis that makes up integrated photonic device.Present optical waveguide comprises full silicon dioxide optical waveguide, lithium niobate fiber waveguide, glass optical waveguide, polymer optical wave guide and III-V group iii v compound semiconductor material optical waveguide etc.Because the material behavior difference that various material had, different separately application is arranged, as the application of silicon dioxide optical waveguide in passive optical waveguide device, the application of lithium niobate fiber waveguide in photomodulator, glass optical waveguide application in optical branching device cheaply etc.Silicon materials are important foundation materials of microelectric technique and micro mechanical technology, for this reason, the application of development silicon materials in the integrated photon technology also is that crisis is important, monolithic between particularly following realization microelectronics, micromechanics and photonic device is integrated, need can realize desired various function on silicon materials.At present, people mainly adopt silicon-on-insulator material to carry out the research work of silicon optical waveguide and related device, utilize the lower limit layer of silicon dioxide layer as light, play the light buffer action between silicon waveguide core layer and substrate layer.Adopt this silicon-on-insulator material to carry out the development of silicon optical waveguide and related device, the deficiency that exists is that degree of freedom is quite little in the design of device, particularly can't handle at the interface, also just can't make full use of the characteristics of silicon materials lower limit layer and silicon waveguide core layer.Advantages such as the present invention proposes to realize the silicon waveguide on polymeric material, and it is big to have an integrated photonic device design freedom, and technology is simple can be utilized the characteristic of silicon materials and polymeric material simultaneously, with both combinations, carry out the research and development of the new function of photonic device.
Summary of the invention
The object of the present invention is to provide a kind of silicon optical waveguide on polymer, can be used for the research and development of silica-based integrated photonic device.
The technical solution adopted for the present invention to solve the technical problems is: silicon optical waveguide on polymer comprises upper limiting layer, silicon core layer, polymkeric substance lower limit layer and substrate successively.
Described silicon core layer is shaped as flat board, ridge, inverse ridge shape, top and bottom ridge shape or stripe shape.
The polymeric material that described polymkeric substance lower limit layer is adopted is fluorinated polyimide or fluoridizes polymethyl methacrylate or fluoride resin or fluoridize silicone grease.
Described substrate is dielectric materials such as silicon, quartz, glass, lithium niobate or polymkeric substance, and upper limiting layer is dielectric materials such as polymkeric substance, silicon dioxide, silicon nitride, air or is combined by two or more dielectric materials.
The useful effect that the present invention has is: the present invention proposes to realize the silicon waveguide on polymeric material, has the big advantage of integrated photonic device design freedom, can utilize the characteristic of silicon materials and polymeric material simultaneously,, carry out the research and development of the new function of photonic device both combinations.On making, has the technology characteristic of simple especially.
Description of drawings
Fig. 1 is the structural drawing with silicon optical waveguide on polymer of slab construction;
Fig. 2 is the structural drawing with silicon optical waveguide on polymer of ridge structure;
Fig. 3 is the structural drawing with silicon optical waveguide on polymer of inverse ridge shape structure;
Fig. 4 is the structural drawing with silicon optical waveguide on polymer of top and bottom ridge shape structure;
Fig. 5 is the structural drawing with silicon optical waveguide on polymer of strip structure.
Among the figure: 1 is the optical waveguide sandwich layer based on silicon, and 2 is the lower limit layer based on polymkeric substance, and 3 is upper limiting layer, and 4 is substrate, and 11 is ridge structure silicon core layer, and 12 is ridge structure silicon core layer, and 13 is ridge structure silicon core layer, and 14 is the strip structure silicon core layer.
Embodiment
As shown in Figure 1, the present invention comprises upper limiting layer 3, silicon core layer 1, polymkeric substance lower limit layer 2 and substrate 4 successively, and silicon core layer 1 is shaped as flat board.。
As shown in Figure 2, silicon core layer 11 is shaped as ridge; As shown in Figure 3, silicon core layer 12 is shaped as inverse ridge shape; As shown in Figure 4, silicon core layer 13 is shaped as top and bottom ridge shape; As shown in Figure 5, silicon core layer 14 is shaped as stripe shape.
The polymeric material that described polymkeric substance lower limit layer 2 is adopted is fluorinated polyimide or fluoridizes polymethyl methacrylate or fluoride resin or fluoridize silicone grease.
Described substrate 4 is silicon, quartz, glass, lithium niobate or polymeric media material, and upper limiting layer 3 forms for dielectric material such as polymkeric substance, silicon dioxide, silicon nitride, air or by two or more dielectric material combination.
Embodiment 1:
On the silicon chip of a slice as the optical waveguide sandwich layer, adopt spin coated film forming legal system to make one deck polyimide, this one side of silicon chip that will have polyimide is bonding with the glass sheet as substrate slice, carries out polyimide curing.To polish as the another side of the silicon chip of optical waveguide sandwich layer then and be thinned to needed core layer thickness, promptly obtain substrate and be glass, lower limit layer and be polyimide, upper limiting layer and be silicon planar light waveguide on the polymkeric substance of air.
Embodiment 2:
On the silicon chip of a slice as the optical waveguide sandwich layer, adopt spin coated film forming legal system to make one deck resin, this one side of silicon chip that will have resin is bonding with the silicon chip as substrate slice, carries out resin solidification.To polish as the another side of the silicon chip of optical waveguide sandwich layer then and be thinned to needed core layer thickness.On the face of attenuate, carry out photoetching subsequently, produce rectangular mask, put into dry etching equipment and etch the ridge structure.Make one deck polymethyl methacrylate polymkeric substance as upper limiting layer for most spin coated again, promptly obtain substrate and be silicon, lower limit layer and be resin, upper limiting layer and be silicon ridge optical waveguide on the polymkeric substance of polymethyl methacrylate polymkeric substance.
Embodiment 3:
At first, carry out bar waveguide photoetching, and in dry etching equipment, etch the inverse ridge shape structure of optical waveguide, remove photoresist as mask layer at silicon chip as the optical waveguide sandwich layer.On the silicon chip surface of ridge structure, adopt spin coated film forming legal system to make one deck polyimide under being manufactured with, this one side of silicon chip that will have polyimide is bonding with the polyimide polymer film sheet as substrate slice, carries out the lower limit layer polyimide curing.To polish as the another side of the silicon chip of optical waveguide sandwich layer then and be thinned to needed core layer thickness, and the method deposition last layer thickness that adopts the cryochemistry deposition is greater than 5 microns silicon dioxide layer, and promptly obtaining substrate is that polymkeric substance, lower limit layer are that polyimide, upper limiting layer are the inverse ridge shape optical waveguide based on silicon on the polymkeric substance of silicon dioxide.
Embodiment 4:
At first, to carry out thermal oxide as the silicon chip of optical waveguide sandwich layer, carry out bar waveguide photoetching subsequently, and in hydrofluorite, bar waveguide pattern is transferred to silicon dioxide layer, again with silicon dioxide layer as mask, adopt wet etching method, erode away the following ridge structure of optical waveguide, remove silicon dioxide as mask layer.On the silicon chip surface of ridge structure, adopt spin coated film forming legal system to make one deck silicone grease under being manufactured with, this one side of silicon chip that will have silicone grease is bonding with the silicone grease diaphragm as substrate slice, carries out the lower limit layer silicone grease and solidifies.To polish as the another side of the silicon chip of optical waveguide sandwich layer then and be thinned to needed core layer thickness, and adopt the method for cryochemistry deposition to deposit the last layer silicon dioxide layer, carry out alignment again, the rectangular mask pattern of realization upper surface is aimed at the following ridge of optical waveguide, after silicon dioxide layer is removed in corrosion, as mask, adopt wet etching method with silicon dioxide layer, erode away the last ridge structure of optical waveguide.Adopt the thin silicon dioxide layer of method deposition last layer of cryochemistry deposition again, promptly obtaining substrate is that silicone grease, lower limit layer are that silicone grease, upper limiting layer are the top and bottom ridge shape optical waveguide based on silicon on the polymkeric substance of silicon dioxide and air.
Embodiment 5:
On the silicon chip of a slice as the optical waveguide sandwich layer, adopt spin coated film forming legal system to make one deck polyimide, this one side of silicon chip that will have polyimide is bonding with the glass sheet as substrate slice, carries out polyimide curing.To polish as the another side of the silicon chip of optical waveguide sandwich layer then and be thinned to needed core layer thickness.On the face of attenuate, carry out photoetching subsequently, produce rectangular mask, put into the hydrofluorite internal corrosion and go out the ridge structure.Make one deck polyimide as upper limiting layer for most spin coated again, promptly obtain substrate and be glass, lower limit layer and be polyimide, upper limiting layer and be silicon strip type optical waveguide on the polymkeric substance of polyimide.
Above-mentioned embodiment is used for the present invention that explains, rather than limits the invention, and in the protection domain of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (8)
1. silicon optical waveguide on polymer, it is characterized in that: it comprises upper limiting layer, silicon core layer, polymkeric substance lower limit layer and substrate successively.
2. silicon optical waveguide on polymer according to claim 1 is characterized in that: described silicon core layer is shaped as flat board.
3. silicon optical waveguide on polymer according to claim 1 is characterized in that: described silicon core layer is shaped as ridge.
4. silicon optical waveguide on polymer according to claim 1 is characterized in that: described silicon core layer is shaped as inverse ridge shape.
5. silicon optical waveguide on polymer according to claim 1 is characterized in that: described silicon core layer is shaped as top and bottom ridge shape.
6. silicon optical waveguide on polymer according to claim 1 is characterized in that: described silicon core layer is shaped as stripe shape.
7. silicon optical waveguide on polymer according to claim 1 is characterized in that: the polymeric material that described polymkeric substance lower limit layer is adopted is fluorinated polyimide or fluoridizes polymethyl methacrylate or fluoride resin or fluoridize silicone grease.
8. silicon optical waveguide on polymer according to claim 1, it is characterized in that: described substrate is silicon, quartz, glass, lithium niobate or polymeric media material, and upper limiting layer is dielectric materials such as polymkeric substance, silicon dioxide, silicon nitride, air or is formed by two or more dielectric material combination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510050878 CN1727928A (en) | 2005-07-28 | 2005-07-28 | Silicon optical waveguide on polymer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510050878 CN1727928A (en) | 2005-07-28 | 2005-07-28 | Silicon optical waveguide on polymer |
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| CN1727928A true CN1727928A (en) | 2006-02-01 |
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| CN 200510050878 Pending CN1727928A (en) | 2005-07-28 | 2005-07-28 | Silicon optical waveguide on polymer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253451A (en) * | 2011-05-13 | 2011-11-23 | 华中科技大学 | Preparation method of lithium niobate optical waveguide |
| CN107843957A (en) * | 2017-11-13 | 2018-03-27 | 上海理工大学 | The heterogeneous integrated waveguide device architecture of silicon nitride lithium niobate and preparation method |
| CN109521512A (en) * | 2018-10-25 | 2019-03-26 | 浙江清华柔性电子技术研究院 | Flexible optical waveguide and preparation method thereof |
| CN110703382A (en) * | 2019-01-10 | 2020-01-17 | 济南晶正电子科技有限公司 | High-integration-level lithium niobate/silicon nitride optical waveguide integrated structure and preparation method thereof |
-
2005
- 2005-07-28 CN CN 200510050878 patent/CN1727928A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253451A (en) * | 2011-05-13 | 2011-11-23 | 华中科技大学 | Preparation method of lithium niobate optical waveguide |
| CN102253451B (en) * | 2011-05-13 | 2013-03-20 | 华中科技大学 | Preparation method of lithium niobate optical waveguide |
| CN107843957A (en) * | 2017-11-13 | 2018-03-27 | 上海理工大学 | The heterogeneous integrated waveguide device architecture of silicon nitride lithium niobate and preparation method |
| CN109521512A (en) * | 2018-10-25 | 2019-03-26 | 浙江清华柔性电子技术研究院 | Flexible optical waveguide and preparation method thereof |
| CN110703382A (en) * | 2019-01-10 | 2020-01-17 | 济南晶正电子科技有限公司 | High-integration-level lithium niobate/silicon nitride optical waveguide integrated structure and preparation method thereof |
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