CN110068549B - Flexible photonic device film stacking structure with negligible force optical coupling effect - Google Patents
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- 230000003287 optical effect Effects 0.000 title claims abstract description 32
- 230000001808 coupling effect Effects 0.000 title claims abstract description 22
- 238000001514 detection method Methods 0.000 claims abstract description 41
- 238000005253 cladding Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 40
- 238000009826 distribution Methods 0.000 claims description 16
- 239000011797 cavity material Substances 0.000 claims description 15
- 239000012790 adhesive layer Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 229920006268 silicone film Polymers 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 6
- 239000012491 analyte Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 18
- 238000004088 simulation Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000741 silica gel Substances 0.000 description 7
- 229910002027 silica gel Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000006177 biological buffer Substances 0.000 description 2
- 108010025899 gelatin film Proteins 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003181 biological factor Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention discloses a flexible photonic device film stacking structure with negligible force optical coupling effect, which comprises a flexible substrate layer, a bonding layer, a cladding layer, a rigid body layer and a two-dimensional optical resonant cavity device layer, wherein the rigid body layer is embedded into the cladding layer and is positioned near the detection surface of the device structure, and the two-dimensional optical resonant cavity device layer is positioned between the rigid body layer and the detection surface. The structure can greatly reduce the strain distributed near the two-dimensional optical resonant cavity in the film stack structure of the flexible photonic device, and under the condition of stress of 3MPa, the order of magnitude of the strain can be greatly reduced by embedding a proper micro rigid body in the cladding, and meanwhile, the flexibility of the whole structure of the flexible photonic device cannot be obviously damaged. The resonance wavelength shift caused by the magnitude of strain is far smaller than the influence of a target analyte on the resonance wavelength shift in the biological detection process, so the influence of the force-optical coupling effect on the biological sensing is completely negligible, and the method has important practical application value.
Description
Technical Field
The invention belongs to the field of photonic integration and biosensing, and particularly relates to a novel flexible photonic device film stacking structure which can ignore the force optical coupling effect to realize biosensing application.
Background
The traditional photonic device is generally a silicon chip integration technology on a rigid substrate, the brittle and hard properties of the traditional photonic device make the photonic device difficult to bend or extend, and in recent years, the flexible photonic device replaces the rigid substrate with a flexible substrate, so that the photonic device still keeps excellent optical performance when mechanical deformation such as bending and extending occurs. This transition has greatly stimulated the potential of photonic devices for many applications in imaging, communications, energy, and sensing. Particularly in the field of biosensing, the flexible photonic device overcomes the problem that the traditional photonic device cannot be compatible with biological tissues, and has mechanical deformable characteristics so that the flexible photonic device is tightly attached to the epidermal tissues of organisms or permeates into the organisms to detect.
Biosensing based on two-dimensional optical resonators uses evanescent waves to achieve detection of target analytes. Before the detection action occurs, the sensor is positioned in a biological buffer solution, when a target analyte is specifically combined with biological recognition molecules, the refractive index near the surface of the sensor is changed due to the difference of the refractive indexes of the target analyte and the biological buffer solution molecules, the change is detected and evaluated by evanescent waves which are also distributed near the surface of the sensor, and finally the shift of resonance wavelength is caused and is used as the quantitative representation of the interaction between the biological molecules and the detection result. Therefore, the distance of the optical cavity from the probe surface must be less than the penetration depth of the evanescent wave. However, since the distance between the neutral plane of the film stack structure of the flexible photonic device and the detection surface is far greater than the penetration depth of the evanescent wave, when the device is stressed and bent, the resonant cavity is inevitably subjected to stress, wherein the radial shear stress and the force-optical coupling effect respectively cause the change of the cavity size and the effective refractive index, thereby causing the shift of the resonant wavelength, introducing the influence of non-biological factors to the detection process, seriously reducing the accuracy of the detection result, and bringing great obstacles to the application of biosensing of the flexible photonic device.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a novel flexible photonic device film stacking structure with negligible force optical coupling effect for solving the influence of the force optical coupling effect on the biological sensing application of a flexible photonic device, which is based on a sandwich film structure of the flexible photonic device.
The technical purpose of the invention is realized by the following technical scheme:
a flexible photonic device film stack structure with negligible force optical coupling effect comprises a substrate layer, a bonding layer arranged on the substrate layer, a cladding layer arranged on the bonding layer, and a rigid body arranged in the cladding layer, wherein a two-dimensional optical resonant cavity device layer is arranged between the rigid body and the outer surface of the cladding layer.
In the technical scheme, the substrate layer is a polyimide film, the Young modulus is 2.5GPa, and the Poisson ratio is 0.34.
In the technical scheme, the adhesive layer is a silica gel film, the Young modulus is 1.5MPa, and the Poisson ratio is 0.49.
In the above solution, the material of the cladding layer can be selected from SU-8, UV-15 or polyimide.
In the technical scheme, rutile phase titanium dioxide is selected as a resonant cavity material in the two-dimensional optical resonant cavity device layer.
In the technical scheme, the thicknesses of the substrate layer, the bonding layer and the cladding layer are all 30 micrometers.
In the above technical solution, the rigid body is diamond, the cross section is rectangular, and the width is 120-80 μm, preferably 100-80 μm; a thickness of 15 to 5 μm, preferably 10 to 5 μm; from 18 μm to 700nm, preferably from 2 μm to 700nm, from the surface of the cladding (i.e. the surface of the cladding material facing outwards, the surface not in contact with silica gel); the closer the rigid body is to the detection surface, the greater the degree of strain reduction, the greater the width of the rigid body, the smaller the strain near the detection surface, and the smaller the thickness, the more the overall flexibility can be maintained.
In the technical scheme, the rigid body is a diamond, the cross section of the rigid body is in a track shape, the length of a straight track part is 100 micrometers, the radius of a curved track part is 5 micrometers, the rigid body is tangent to the straight track part, the thickness of the rigid body is 10 micrometers, and the distance from the rigid body to the detection surface is 2 micrometers.
The invention has the advantages that the strain distributed near the two-dimensional optical resonant cavity in the film stack structure of the flexible photonic device is greatly reduced, and the magnitude of the strain can be reduced to 10 by embedding a proper micro rigid body in the cladding under the condition of 1-3MPa of stress-10-10-91/10 of sandwich film structure of traditional flexible photon device8And meanwhile, the flexibility of the whole structure of the flexible photonic device is not obviously damaged. This magnitude of strain only causes 10-5-10-4The pm resonance wavelength shift is far smaller than the influence of a target analyte on the resonance wavelength shift in the biological detection process, so the influence on the biological sensing caused by the force optical coupling effect can be completely ignored, and a novel thought and an effective method are provided for the practical application of the flexible photonic device to realize the biological sensing.
Drawings
Fig. 1 is a schematic structural diagram of a novel flexible photonic device thin film stack structure of the present invention.
Fig. 2 is a strain sensitivity diagram of a theoretical flexible photonic thin film stack structure.
FIG. 3(a) is a schematic diagram of a finite element simulation model of a conventional structure of a flexible photonic device.
FIG. 3(b) is a schematic diagram of a finite element simulation model of a flexible photonic device structure of the present invention.
Fig. 3(c) is a simulated cloud of stress distribution along the film stacking direction in the conventional structure of the flexible photonic device.
Fig. 3(d) is a simulated cloud of stress distribution along the film stacking direction in the flexible photonic device structure of the present invention.
FIG. 3(e) is a graph of the results of a calculation of the stress distribution near the detection surface in a flexible photonic device structure and a flexible photonic device structure of the present invention.
FIG. 3(f) is a graph of the results of calculations for resonant wavelength shift due to the force optical coupling effect in flexible photonic devices and flexible photonic device structures of the present invention.
Fig. 4(a) is a schematic diagram of the process of moving a rigid body to a detection surface in the flexible photonic device structure of the present invention.
FIG. 4(b) is a graph showing the results of a simulation in which the positions of different rigid bodies affect the strain experienced near the detection surface under a uniform load of 3 MPa.
FIG. 5(a) is a schematic cross-sectional view of a novel flexible photonic device thin film stack structure embedded with different sized rigid bodies.
FIG. 5(b) is a graph showing the results of a simulation of the effect of different rigid body widths on the strain experienced near the probing surface under a uniform load of 3 MPa.
FIG. 5(c) is a graph showing the results of a simulation of the effect of different rigid body thicknesses on the strain experienced near the probe surface under a uniform load of 3 MPa.
Fig. 6(a) is a schematic cross-sectional view of a novel flexible photonic device thin film stack structure embedded in a racetrack-type rigid body.
FIG. 6(b) is a graph showing the simulation results of the influence of the racetrack-type rigid body and rectangular rigid body structures on the strain near the detection surface under a uniform load of 3 MPa.
Detailed Description
The invention is further described in detail below with reference to the drawings and the specific embodiments.
According to the invention, on the basis of a traditional film sandwich structure of a flexible photonic device, a rigid body is embedded in a cladding layer of a film stack to form a novel film structure of the flexible photonic device, as shown in figure 1. Directions 1, 2, 3 show the front, left and top views, respectively, of the novel film structure, including a substrate layer 4, an adhesive layer 5 disposed on the substrate layer, a cladding layer 6 disposed on the adhesive layer, and a rigid body 7 disposed within the cladding layer, with a two-dimensional optical resonator device layer 8 disposed between the rigid body and the outer surface (i.e., the detection surface) of the cladding layer.
In general, the fabrication of flexible photonic devices requires the separation of patterned optical structures from rigid substrates to form free-standing flexible structures, where the use of kepton tape is one of the commonly used transfer methods. The Kepton adhesive tape is respectively composed of a polyimide film with Young modulus of 2.5GPa and Poisson ratio of 0.34 and a silica gel film with Young modulus of 1.5MPa and Poisson ratio of 0.49. Specifically, the method comprises the following steps: 4, selecting a polyimide material as a substrate layer; the adhesive layer 5 is a silica gel adhesive layer, and is a main component of the Kepton adhesive tape and is responsible for transferring an optical structure from a rigid substrate to a flexible substrate; the material of the cladding 6 can be selected from SU-8, UV-15 or polyimide, and SU-8 is used as the cladding material in the embodiment; a rigid body 7 (e.g., diamond) within the cladding is positioned within the SU-8 cladding 6 adjacent to its upper surface (i.e., the biodetection surface) with a two-dimensional optical resonator device layer 8 (i.e., a dual straight waveguide micro-ring resonator) therebetween.
When the flexible photonic device is deformed by force, the change of the resonant cavity size and the refractive index of the cavity material can cause the shift of the resonant wavelength, wherein the shift of the resonant wavelength is caused by the radial shear stress, and the shift of the resonant wavelength is caused by the mechanical optical coupling effect. Resonant wavelength shift Δ λrThe size of (d) can be expressed as:
wherein λ isrRepresenting the resonance wavelength, L and Δ L representing the cavity perimeter and its variation, neffAnd Δ neffRespectively, the effective refractive index and its variation. The strain sensitivity of flexible photonic devices of different materials typically differs. In the embodiment, polyimide, silica gel, SU-8 and rutile phase titanium dioxide are respectively used as a substrate layer, a bonding layer, a cladding and a resonant cavity material of the flexible photonic device, the relation curve of the resonant wavelength shift and the strain is shown in FIG. 2, and the corresponding strain sensitivity is 0.87 pm/mu epsilon. From the above analysis, it can be found that the relationship between the resonance wavelength and the strain is changed linearly, and if the strain distribution near the resonant cavity can be greatly reduced, the resonance wavelength shift caused by the force-optical coupling effect is greatly reduced, and can be ignored. The strain distribution along the film stacking direction in the flexible photonic device transmission and the structure of the invention is analyzed by a finite element simulation method.
Fig. 3(a) and 3(b) show finite element simulation models of conventional and novel thin film stack structures, respectively, where the substrate layer, bonding layer and cladding are all 30 μm thick, the initial dimension of the tiny rigid body (diamond) is set to be 100 μm wide and 10 μm thick, the initial shape of the cross-section is set to be rectangular and the initial position is set to be 15 μm from the upper surface of the cladding (i.e., the outward surface of the cladding material, the surface not in contact with the silica gel) (as shown in the figure, each level structure has no effect in the length direction, only thickness and width are considered). In the finite element simulation process, 1-3Mpa uniform load is applied to the surface of the substrate layer, the degree of freedom of the left side and the right side of the model in the y direction is limited, and the condition of stress bending of the structure is simulated. The effect on strain is negligible since the thickness of the resonator is small (in the order of nanometers) relative to the thickness of the substrate layer, the adhesive layer and the cladding layer (in the order of micrometers), resulting in a bending stiffness much smaller than that of the three layers, and no micro-ring resonator is placed in the finite element simulation model.
Fig. 3(c) and 3(d) show the strain distribution clouds in the film stacking direction in both models when the device structure is subjected to a uniform load of 1 Mpa. The blank portion in fig. 3(d) indicates a (minute) rigid body, which does not deform at all when the device structure is bent by force, and the internal strain distribution is zero. From the strain cloud chart, it can be roughly seen that the strain of the novel thin film stack structure embedded with the tiny rigid body is far smaller near the surface of the SU-8 layer than that of the traditional sandwich structure, and the strain distribution of the structure is basically in the same order of magnitude at other positions of the cross section. This shows that the new thin film stack structure has significant effect on reducing local strain near the cladding surface of the flexible photonic device, while the original flexibility of the device is not significantly damaged. In order to reflect the degree of the decrease in strain more intuitively, the strain applied to each position within 1000nm from the upper surface of the cladding layer was quantitatively analyzed, and the calculation results are shown in FIG. 3 (e). It can be found that the strain is reduced by up to 2-3 orders of magnitude. In addition, the effect of the strain on the resonant wavelength at the same position in the two flexible photonic device structures can be obtained from the results of fig. 2, as shown in fig. 3 (f). Likewise, the resonant wavelength shift is reduced by 2-3 orders of magnitude.
A tiny rigid body with a width of 120 μm and a thickness of 10 μm is embedded at 18 μm from the surface of the cladding (i.e., the surface of the cladding material facing outward, the surface not in contact with silica gel), and the rigid body is gradually moved toward the surface of the cladding until the movement stops at 2 μm from the detection surface, which is shown in FIG. 4 (a). When the device structure is subjected to a uniform load of 3MPa, the strain distribution near the detection surface is as shown in FIG. 4(b), the strain near the detection surface is gradually reduced as the rigid body moves toward the detection surface, and when the rigid body is 2 μm away from the detection surface, the magnitude of the strain is 10-8-10-9The strain is reduced by 4-5 orders of magnitude compared to the initial position, and the strain at 700nm from the surface of the probe layer is even only 10 orders of magnitude-10. This indicates that the closer the embedded rigid body is to the detection surface, the greater the degree of strain reduction.
Then, the distance between the fixed rigid body and the probe surface was 2 μm, and the size of the cross section of the rigid body was changed so that the width of the rigid body was gradually reduced from 120 μm to 80 μm and the thickness was gradually reduced from 15 μm to 5 μm, as shown in FIG. 5 (a). From the results in FIG. 4(b), it is understood that the strain distribution in the film stacking direction no longer exhibits a linear change when the rigid bodies are 2 μm from the detection surface, so that in the structure in which rigid bodies of different sizes are embedded, the magnitudes of strains at several positions near the detection surface are calculated, respectively, to make a scattergram. Fig. 5(b) and 5(c) show the effect of the variation in the width and thickness of the rigid body on the strain distribution near the detection surface, respectively. It can be seen that the larger the width of the rigid body, the smaller the strain near the detection surface, and the strain distribution near the detection surface is basically in the same order of magnitude under the conditions of different thicknesses of the rigid body. The distance between the maxima and minima at each point in the scatter plot may indicate the degree of strain reduction at the corresponding location, and therefore the degree of strain reduction is much greater than for a rigid body width increased by varying the rigid body thickness.
Finally, the cross section of the tiny rigid body is changed from a rectangle to a track shape, as shown in fig. 6(a), the straight track part is 100 μm long, the radius of the curved track part is 5 μm, the straight track part is tangent to the curved track part, the thickness of the rigid body is 10 μm, and the distance from the detection surface is 2 μm. Through finite element simulation, the strain distribution near the surface of the novel thin film stack structure embedded with the racetrack-shaped rigid body and embedded with the rectangular rigid body with the width of 100 μm and the thickness of 10 μm and the width of 110 μm and the thickness of 10 μm when the device is subjected to a uniform load of 3Mpa is quantitatively analyzed, and the result is shown in fig. 6 (b). It can be found that the racetrack-shaped rigid body can further reduce the strain on the detection surface of the novel film stack structure after mechanical deformation, and the magnitude of the strain is only 10-10-10-9。
The novel flexible photonic device thin film stacking structure provided by the invention can remarkably reduce the strain distribution near the detection surface so as to ensure that the optical coupling effect is negligible, and simultaneously, the original mechanical deformability of the flexible photonic device is not obviously damaged. Under the condition of 3MPa of stress, a proper micro rigid body is embedded in the cladding, so that the magnitude of strain can be greatly reduced, and meanwhile, the flexibility of the whole structure of the flexible photonic device cannot be obviously damaged. The resonance wavelength shift caused by the strain of the magnitude order is far smaller than the influence of a target analyte on the resonance wavelength shift in the biological detection process, so the influence on biological sensing caused by the force-light coupling effect can be completely ignored, and embedding a rigid body which has smaller thickness, larger width, smoother shape and closer distance to the detection surface is a better choice for improving the performance.
The invention has been described in an illustrative manner, and it is to be understood that any simple variations, modifications or other equivalent changes which can be made by one skilled in the art without departing from the spirit of the invention fall within the scope of the invention.
Claims (8)
1. A flexible photonic device film stacking structure with negligible force optical coupling effect is characterized by comprising a substrate layer, an adhesive layer arranged on the substrate layer, a cladding arranged on the adhesive layer and a rigid body arranged in the cladding, wherein a two-dimensional optical resonant cavity device layer is arranged between the rigid body and the outer surface of the cladding, and the thicknesses of the substrate layer, the adhesive layer and the cladding are all 30 micrometers;
embedding a tiny rigid body with the width of 120 mu m and the thickness of 10 mu m at a position 18 mu m away from the surface of the cladding, enabling the rigid body to gradually approach the surface of the cladding until the rigid body stops moving at a position 2 mu m away from the detection surface, and when the device structure bears 3MPa uniform load, and when the rigid body is 2 mu m away from the detection surface, the magnitude order of magnitude of the strain borne by the rigid body is 10-8-10-9；
Fixing the distance between the rigid body and the detection surface to be 2 micrometers, changing the size of the cross section of the rigid body to ensure that the width of the rigid body is gradually reduced from 120 micrometers to 80 micrometers, the thickness of the rigid body is gradually reduced from 15 micrometers to 5 micrometers, and when the rigid body is 2 micrometers away from the detection surface, the strain distribution along the film stacking direction does not show linear change any more;
the cross section of the tiny rigid body is changed into a track shape from a rectangle, the length of a straight track part is 100 mu m, the radius of a bent track part is 5 mu m, the tiny rigid body is tangent to the straight track part, the thickness of the rigid body is 10 mu m, the distance is 2 mu m from a detection surface, when a device bears a uniform load of 3Mpa, the situation that the position near the detection surface of a novel film stacking structure of the embedded track-shaped rigid body and the embedded rectangular rigid body with the width of 100 mu m, the thickness of 10 mu m, the width of 110 mu m and the thickness of 10 mu m is quantitatively analyzed through finite element simulationThe strain distribution condition of the track-shaped rigid body can further reduce the strain of the detection surface of the novel film stack structure after mechanical deformation, and the magnitude of the strain is only 10-10-10-9。
2. A flexible photonic device film stack structure with negligible force optical coupling effect as in claim 1, wherein the substrate layer is a polyimide film and the adhesive layer is a silicone film; the material of the cladding is SU-8, UV-15 or polyimide; rutile phase titanium dioxide is selected as a resonant cavity material in the two-dimensional optical resonant cavity device layer.
3. A flexible photonic device film stack structure with negligible force optical coupling effect according to claim 2, wherein the polyimide film has a young's modulus of 2.5GPa and a poisson's ratio of 0.34.
4. A flexible photonic device film stack structure with negligible wet out effect according to claim 2, wherein the silicone film has a young's modulus of 1.5MPa and a poisson's ratio of 0.49.
5. A flexible photonic device film stack structure with negligible force optical coupling effect according to claim 1, wherein the rigid body is diamond, the cross section is rectangular, and the width is 120-80 μm; the thickness is 15-5 μm; the distance from the surface of the cladding is 18 mu m-700 nm.
6. A flexible photonic device film stack structure with negligible force optical coupling effect according to claim 1, wherein the rigid body is diamond, with a rectangular cross section and a width of 100-80 μm; the thickness is 10-5 μm; the distance from the surface of the cladding is 2 mu m-700 nm.
7. A flexible photonic device film stack structure with negligible force optical coupling effect according to claim 1, wherein the rigid body is diamond and the cross-section is racetrack shaped with a straight racetrack portion 100 μm long and a curved racetrack portion 5 μm radius, respectively tangent to the straight racetrack portion, and the rigid body is 10 μm thick and 2 μm from the probing surface.
8. A flexible photonic device film stack structure with negligible FOOD coupling effect as recited in claim 1, wherein the closer the rigid body is to the sensing surface, the greater the strain reduction, the wider the rigid body, the less strain near the sensing surface, and the smaller the thickness, the more flexibility of the whole can be maintained.
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