CN110926666B - Pressure sensing device based on surface plasmon polariton lattice resonance - Google Patents

Pressure sensing device based on surface plasmon polariton lattice resonance Download PDF

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CN110926666B
CN110926666B CN201911261928.4A CN201911261928A CN110926666B CN 110926666 B CN110926666 B CN 110926666B CN 201911261928 A CN201911261928 A CN 201911261928A CN 110926666 B CN110926666 B CN 110926666B
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metal ridge
pressure sensor
silicon substrate
ridge
pressure
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CN110926666A (en
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刘国泉
石云杰
李光元
董玉明
焦国华
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Shenzhen Institute of Advanced Technology of CAS
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/24Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites

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Abstract

The invention relates to a pressure sensor based on surface plasmon lattice resonance, which comprises an upper silicon substrate, a nanostructure unit array positioned below the upper silicon substrate, and a lower metal plate, wherein the nanostructure unit is formed by closely laminating a top metal ridge, a middle medium column and a bottom metal ridge which are sequentially arranged from top to bottom; the lower metal plate is arranged below the bottom metal ridge, and the lower metal plate and the bottom metal ridge are fixedly arranged at a certain interval d. External pressure acts on the lower metal plate, so that the size of the device structure interval d is changed, the surface plasmon resonance wavelength is changed, and a pressure signal is converted into an optical signal for detection. The optical device structure greatly improves the stability of the measuring system, can realize the accurate detection of micro deformation pressure, and reduces the influence of temperature, humidity and electromagnetic interference on system signal drift.

Description

Pressure sensing device based on surface plasmon polariton lattice resonance
Technical Field
The invention belongs to the technical field of integrated optics and pressure sensing, and particularly relates to a pressure sensing device based on surface plasmon polariton lattice resonance.
Background
At present, the terminal has higher and higher requirements for the performance and application of the sensor. The miniaturization, high integration, high sensitivity and quick response of the sensor become important indexes for measuring the design performance of the novel sensor. Because the surface lattice resonance of the plasma supported by the metal nanoparticle array has narrow line width and enhanced local field, the novel sensor index can be obtained very easily, which makes the novel sensor extremely attractive in various applications including nano lasers, biochemical sensors and nonlinear optics. With the development of nanotechnology, the nano optical sensor designed by further fusing the optical and optical fiber sensor with nanotechnology also has excellent sensing performance, and can meet a plurality of requirements of a plurality of novel sensors in application. Therefore, the design of micro sensors based on surface plasmons and nanotechnology is also gradually attracting attention.
The pressure sensor is a device which can sense pressure signals and convert the pressure signals into output signals which can be recognized by a user, is the most common sensor in practice, and is widely applied to various industries such as intelligent buildings, automatic control, aerospace, medical treatment and the like. The pressure sensors can be divided into a plurality of types according to the working principle, wherein with the development of optical technology, pressure sensors designed based on the relation between optical signals and pressure signals are increasingly favored due to the superior performance of the pressure sensors.
Patent CN108195494A discloses an optical pressure sensor based on slit surface plasmon, which is mainly composed of a substrate etched with a ridge waveguide array, and a metal film sputtered on the surface of the substrate, and a sleeve is added to protect the internal structure of the device. The sensor detects pressure changes based on changes of the surface plasmon resonance modes, the pressure enables the sensor substrate to deform, and then the size of gaps between arrays on the substrate changes, so that the wavelength of the surface plasmon changes, and therefore, pressure signals are converted into optical signals to achieve detection. Although the optical pressure sensor can realize the detection of pressure, the following problems still need to be solved:
(1) the pressure range within the range is not linear. The metal array structure in patent CN108195494A has narrow gap, and the gap between one-dimensional or two-dimensional metal arrays on the silicon substrate is about 50nm, and in some application scenarios such as blood vessel micro-pressure measurement, the array period will affect the linearity of the liquid micro-pressure measurement.
(2) The pressure is detected by changing the array gap size through the deformation of the nano-pillar array substrate, and the requirement on the deformation elasticity of the substrate material is high. The array substrate of patent CN108195494A needs to use highly elastic Polydimethylsiloxane (PDMS) material.
(3) The surface of the material needs hydrophilic modification. Patent CN108195494A utilizes a reactive ion etcher to perform hydrophilic surface modification, realizing anisotropic etching of silicon and polymer, which increases the manufacturing cost and makes it difficult to control the modification performance.
The narrow-band surface plasmon polariton lattice resonance pressure sensor can effectively solve the problems.
Disclosure of Invention
In view of the above disadvantages in the prior art, the present invention provides a pressure sensor based on surface plasmon polariton lattice resonance, which uses a pressure sensing technology of surface plasmon polariton lattice resonance to detect a minute pressure. The pressure sensor is based on the structural design of a Metal-dielectric-Metal (MIM) nano array, and the tiny pressure change on the surface of a sensing device is represented by the movement of the spectral peak position of reflected light under different air intervals, so that the purpose of high-sensitivity pressure sensing is achieved.
Specifically, the pressure sensor comprises an upper silicon substrate, a nanostructure unit array positioned below the upper silicon substrate, and a lower metal plate, wherein the coordinate axis is set to be vertical to the y direction along the x direction, the x direction and the y direction are parallel to the upper silicon substrate, and the z direction is vertical to the upper silicon substrate; the nano-structure unit is formed by closely overlapping a top metal ridge, a middle-layer medium column and a bottom metal ridge which are sequentially arranged from top to bottom; the top metal ridge, the middle-layer dielectric column and the bottom metal ridge have the same cross section shape parallel to the upper-layer silicon substrate; the top metal ridge and the bottom metal ridge are made of the same material; the nano-structure units are respectively arrayed and arranged below the upper silicon substrate along the x direction and the y direction; the lower metal plate is arranged below the bottom metal ridge, and the lower metal plate and the bottom metal ridge are fixedly arranged at a certain interval.
Preferably, the refractive index of the upper silicon substrate is 1.52, the intermediate dielectric pillars are silicon dioxide with a refractive index equal to 1.45, and the top metal ridges and the bottom metal ridges are gold, silver or aluminum.
Further preferably, the top metal ridge, the middle layer dielectric pillar and the bottom metal ridge have a square cross section parallel to the upper layer silicon substrate. The sides of the square are preferably 180 nm.
The width and length variation ranges of the top metal ridge, the middle layer dielectric column and the bottom metal ridge are 60 nm-100 nm. The thickness variation range of the top metal ridge and the bottom metal ridge is 130 nm-150 nm, and the thickness variation range of the middle-layer medium column is 140 nm-180 nm.
Further preferably, the thickness of the top metal ridge and the bottom metal ridge is 140nm, and the thickness of the middle layer dielectric pillar is 160 nm.
The periodic variation range of the array arrangement is 430 nm-470 nm. Preferably, the period of the array arrangement is 450 nm.
Based on the above preferred parameters, the spacing d is set to 5-15 nm. The value of d is in a certain relationship with the above preferred values, but even if the values of the above parameters are adjusted, the optimal value of d is only slightly changed, and the range of 5-15nm is still preferable.
Correspondingly, the invention also provides a pressure detection system using the pressure sensor, which comprises the pressure sensor, an optical fiber, a light source and a spectrum measurement system; the upper silicon substrate and the lower metal plate of the pressure sensor are embedded in the micro-catheter; and the end face of the optical fiber is arranged at an interval with the upper silicon substrate.
Further, the optical fiber may include a first optical fiber that guides incident light from the light source to the pressure sensor, and a second optical fiber that absorbs reflected light from the pressure sensor and guides the reflected light to an outside spectrum measuring system.
The pressure sensor is mainly used for high-sensitivity optical fiber pressure sensing in a specific range, and is suitable for a plurality of application scenes such as blood vessel micro-pressure measurement and the like which need to carry out fine measurement on pressure. Compared with a pressure sensor in the prior art, the optical device structure greatly improves the stability of a measuring system, can realize accurate detection of micro deformation pressure, and reduces the influence of temperature, humidity and electromagnetic interference on system signal drift. The surface of the material used in the invention does not need to be subjected to hydrophilic modification treatment, so that the preparation process flow of the sensor is optimized.
The foregoing description is only an overview of the technical solutions of the present application, and in order to make the technical solutions of the present application more clear and clear, and to implement the technical solutions according to the content of the description, the following detailed description is made with reference to the preferred embodiments of the present application and the accompanying drawings.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings;
FIG. 1 is a plan view of a pressure sensing device design based on surface plasmon lattice resonance;
FIG. 2 is a reflectance spectrum of a device structure at normal incidence for different spacings d;
FIG. 3 is a graph of the shift of lattice resonance peak positions on the surface of the plasma at different intervals d;
fig. 4 is a schematic diagram of a pressure detection system.
Reference numerals:
1-upper silicon substrate, 2-top metal ridge, 3-middle silicon dioxide medium, 4-bottom metal ridge, 5-lower metal plate, 4-1 pressure sensor containing micro-conduit, 4-2 optical fiber, 4-3 light source and 4-4 spectrum measuring system.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, shall fall within the scope of protection of the present invention.
The surface plasmon belongs to the field of nanophotonics, is a surface wave mode localized at a metal-medium interface, and can realize the control of light propagation behavior in a nanometer range, namely the traditional optical diffraction limit is broken through. Surface plasmons provide a platform for controlling the interaction between light and a substance in a sub-wavelength scale, and are now widely applied to enhancing nonlinear effects, surface-enhanced raman scattering, and surface-enhanced fluorescence effects. The two remarkable characteristics of surface plasmons, namely space scale compression and local field enhancement, are benefited, and the surface plasmons are continuously applied and developed in the field of sensing technologies. Among the numerous surface plasmon structures, a metal-dielectric-metal (MIM) waveguide structure is a common structure that can achieve the simultaneous guidance, coupling, localization, and focusing of electromagnetic waves at the nanoscale.
The MIM metal nano-pillar structure can excite an electric dipole or a four-dipole under the drive of a space optical electric field to form local surface plasmon resonance. When the metal nano-pillar structures are periodically arranged and the period is equal to the light wavelength, long-distance coupling can be realized between local surface plasmons of each metal nano-pillar structure through a diffraction mode of the array structure, and surface plasmon lattice resonance is formed. The metal plate has higher reflectivity, so that the reflection of light is enhanced, free electron coupling of collective oscillation is generated between the metal plate and the metal surface in the region, the electric field intensity is enhanced again, and a stronger resonant cavity is formed in the local region. The characteristics are applied to the micro-pressure sensor, and the pressure measurement performance with high sensitivity, high accuracy and low drift rate can be realized.
The pressure sensor based on the surface plasmon lattice resonance is manufactured by the technology, and the micro pressure in the human body can be detected. The invention uses the movement of the spectral peak position of the reflected light under different air intervals to represent the tiny pressure change on the surface of the sensing device, thereby achieving the purpose of high-sensitivity pressure sensing.
Referring to the attached fig. 1 of the specification, the pressure sensing device based on surface plasmon lattice resonance mainly comprises: an upper silicon substrate 1, a top metal ridge 2, a middle silicon dioxide medium 3, a bottom metal ridge 4 and a lower metal plate 5. A coordinate system is established in which coordinate axes are set such that the x direction is perpendicular to the y direction, both of which are parallel to the upper silicon substrate 1, and the z direction is perpendicular to the upper silicon substrate 1. Fig. 1 is an xz sectional view, in this embodiment, the xz section and the yz section are completely identical, which corresponds to the MIM metal nano-pillars being periodically arranged along the x and y directions, respectively.
The refractive index of the upper silicon substrate 1 of the sensing device structure is nsi1.52 silicon, intermediate medium 3 of metal-medium-metal nano-pillar with refractive index nsio2Silica of 1.45. The top metal ridge 2 and the bottom metal ridge 4 are made of the same material and can be made of one of gold, silver or aluminum, and the preferred metal material is gold. The lower metal plate 5 is a metal material having a thickness of about 500nm, such as one of gold, silver or aluminum, preferably gold, because such metals have a high reflectivity. A gap d having a constant interval between the bottom metal ridge 4 and the lower metal plate 5 is filled with a refractive index n between the upper silicon substrate 1 and the lower metal plate 5air1.0 of air.
The lower metal plate 5 enhances the reflection of light due to its high reflectivity, and couples with the free electrons of the collective oscillation on the metal surface in the region, again enhancing the electric field strength. This allows the sensor to have greater performance. This can be further explained in terms of plasmons (Plasmon) and band theory. There are not completely filled bands in the metal, called valence bands, where there are many free electrons. These free electrons are very similar to the free ions in the plasma, so that the theory on plasma can be used to explain the electronic behavior in metals. Photons with frequencies below the plasma frequency are almost completely reflected due to Electric field screening, and almost completely transmitted at higher frequencies because free electrons cannot keep up with the photon frequency.
In this embodiment, the metal-dielectric-metal MIM nano-pillars exhibit a preferably square shape in a cross-section parallel to the x-y plane. The dimensional parameters of each part in the device structure are preferably as follows: the side length w of the square nano-pillar is 180nm, and the thickness h of the top metal ridge 2 and the bottom metal ridge 41And h2Equal in the range of 130-150nm, preferably 140nm, the thickness h of the intermediate silicon dioxide dielectric 3dThe range is 140-180nm, preferably 160nm, and the array period L along the x-axis and y-axis should be equal, the range is 430-470nm, preferably 450 nm. Thus, the MIM nanopillar array in the designed device structure preferably has a total height of 440 nm. MIThe M-nano-pillar array is located under an upper silicon substrate 1 having a refractive index of 1.52 and a thickness of about 500nm, and with a sufficiently thick lower metal plate 5 thereunder, the thickness of the lower metal plate 5 being, for example, about 500 nm. During use, the upper surface of the silicon substrate 1 on the upper layer of the structure is vertically incident with an incident angle θ of 0 °.
MIM nanopillar arrays may be fabricated using advanced nano-fabrication processes. According to the structure shown in fig. 1, a thick intermetallic multilayer compound is first deposited by electron beam evaporation, and then a mask is prepared on top by electron beam lithography and electron beam deposition. Then, the MIM nanopillar array may be obtained by a dry etching process (sequentially etching the metal ridge 2, the silicon dioxide dielectric 3, and the metal ridge 4) for a plurality of times, and then by a lift-off process. Finally, the upper silicon substrate 1 is turned upside down on the lower metal plate 5 at a certain distance d. The manufacturing process of the invention does not need to modify the surface of the material, and the device of the invention is more stable because the variable of the material modification is many.
Regarding the fixation of the spacing d, see fig. 4 in the specification, it is possible to embed the upper silicon substrate 1 and the lower metal plate 5 in the optical fiber micro-tube, for example. Preferably, the side of the conduit contacting the underlying metal plate 5 needs to be kept at a distance of 5-20nm to facilitate the shift variation of the spacing d. The position of the optical fiber micro-catheter is a position which does not influence the performance of the device outside the array periodic structure. Alternatively, a thin housing may be used to cover the upper silicon substrate 1 and the lower metal plate 5, and the upper silicon substrate 1 and the lower metal plate 5 are fixed to the thin housing, respectively. The air separation d can be controlled between 5-15nm, preferably 10nm, and is determined by reference to the reflectivity spectrum of the device structure shown in fig. 2 of the specification at normal incidence for different spacings d, as explained below.
External pressure acts on the lower surface of the lower metal plate 5, so that the size of the device structure interval d is changed, the surface plasmon resonance wavelength is changed, and a pressure signal is converted into an optical signal for detection. And obtaining the corresponding pressure value acting on the substrate through the lattice resonance peak value of the plasma surface. In the present embodiment, the influence of the change in the interval d value on the optical signal is calculated by simulation. The calculations were performed using a full vector Rigorous Coupled Wave Analysis software package (RCWA), specifically with planar Wave incidence per unit electric field strength (| E0| ═ 1) impinging on the nanostructure array in the above example, and simulated experimental data were obtained. Referring to fig. 2 of the specification, when d varies from 5 to 10nm, a peak at about 1.2 μm in the curve of d-5 nm in the reflectance spectrum shifts to a position corresponding to about 1.0 μm in the curve of d-10 nm, and the peak position shifts very significantly. Corresponding to a shift of the peak position by about 42nm for every 1nm change in the value of d, the reaction is very sensitive. Also, as shown in FIG. 3 of the specification, the interval d varies in the range of 5 to 9nm, and the linearity of the peak position variation is also excellent. Therefore, based on the characteristics of sensitive response and good linearity, the pressure sensor is very suitable for accurately measuring the tiny pressure.
The pressure sensor is matched with the optical fiber to form a pressure detection system, and the system is shown in the attached figure 4 of the specification and mainly comprises a pressure sensor 4-1 with a micro-catheter, an optical fiber 4-2, a light source 4-3 and a spectrum measurement system 4-4. The end face of the optical fiber 4-1 is spaced from the upper silicon substrate 1 in the pressure sensor of the invention by a certain distance q, and the q value ranges from 0 to 100 μm, preferably 50 μm. An optical fiber 4-2 is arranged above the metal nano array and comprises a first optical fiber guiding incident light emitted by a light source to the metal nano array and a second optical fiber absorbing reflected light of the metal nano array and guiding the reflected light to an external spectrum measuring system 4-4; the wavelength of light emitted by the light source is within the range of 400-750nm, the light enters the pressure sensor 4-1 containing the micro-catheter through the end face of the optical fiber, and the metal nano-array forms a surface plasmon effect under the excitation of the incident light. The size of the gap d between the metal nano arrays is changed when the pressure is applied to the pressure-receiving surface, so that the reflection spectrum is changed. And obtaining a peak value through a reflection spectrum measured by the spectrum measuring system, and further obtaining a pressure value on the lower surface of the metal plate 5 through a demodulation algorithm. The linear relation between the peak position movement and the d value can be established by changing the pressure measuring method of the air interval d, the response is sensitive, and the subsequent demodulation algorithm is simplified.
Compared with the prior art, the pressure sensor and the pressure detection system have the following advantages: 1. the invention designs a novel pressure sensing structure based on surface plasmon lattice resonance, and can realize high-sensitivity micro-pressure measurement in a certain range; 2. the air interval d value is small, controllability is strong, and the interval d and peak position movement linearity in the measuring range is good. 3. The device is convenient to process and manufacture, and the material does not need surface hydrophilic modification.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (10)

1. A pressure sensor based on surface plasmon lattice resonance, comprising an upper silicon substrate (1), a nanostructure element array located below the upper silicon substrate (1), and a lower metal plate (5), coordinate axes are set to be x-direction and y-direction perpendicular, and both are parallel to the upper silicon substrate (1), and z-direction is perpendicular to the upper silicon substrate (1),
the nano-structure unit is formed by closely overlapping a top metal ridge (2), a middle-layer medium column (3) and a bottom metal ridge (4) which are sequentially arranged from top to bottom;
the top metal ridge (2), the middle-layer dielectric column (3) and the bottom metal ridge (4) have the same cross-sectional shape parallel to the upper-layer silicon substrate (1);
the top metal ridge (2) and the bottom metal ridge (4) are made of the same material;
the nano-structure units are respectively arrayed and arranged below the upper silicon substrate (1) along the x direction and the y direction;
the lower metal plate (5) is arranged below the bottom metal ridge (4), and the lower metal plate (5) and the bottom metal ridge (4) are fixedly arranged at a certain interval d;
the interval d is 5-15 nm;
the periodic variation range of the array arrangement is 430 nm-470 nm.
2. The pressure sensor of claim 1, wherein: the refractive index of the upper silicon substrate (1) is 1.52, the middle dielectric column (3) is silicon dioxide with the refractive index equal to 1.45, and the top metal ridge (2) and the bottom metal ridge (4) are gold, silver or aluminum.
3. The pressure sensor of claim 2, wherein: the top metal ridge (2), the middle layer medium column (3) and the bottom metal ridge (4) are parallel to the upper layer silicon substrate (1), and the cross section of the upper layer silicon substrate is square.
4. The pressure sensor of claim 2, wherein: the width and length variation ranges of the top metal ridge (2), the middle layer medium column (3) and the bottom metal ridge (4) are 60 nm-100 nm.
5. The pressure sensor of claim 3, wherein: the side length of the square is 180 nm.
6. The pressure sensor of claim 4, wherein: the thickness variation range of the top metal ridge (2) and the bottom metal ridge (4) is 130 nm-150 nm, and the thickness variation range of the middle layer medium column (3) is 140 nm-180 nm.
7. The pressure sensor of claim 6, wherein: the thickness of the top metal ridge (2) and the bottom metal ridge (4) is 140nm, and the thickness of the middle-layer medium column (3) is 160 nm.
8. The pressure sensor of claim 1, wherein: the period of the array arrangement is 450 nm.
9. A pressure detection system using a pressure sensor according to any of claims 1-8, comprising a pressure sensor, an optical fiber (4-2), a light source (4-3) and a spectroscopic measurement system (4-4); an upper silicon substrate (1) and a lower metal plate (5) of the pressure sensor are embedded in the micro-catheter; the end face of the optical fiber (4-2) is spaced from the upper silicon substrate (1).
10. A pressure detection system according to claim 9, characterized in that the optical fibers (4-2) comprise a first optical fiber for guiding incident light emitted by the light source (4-3) to the pressure sensor and a second optical fiber for absorbing reflected light of the pressure sensor and guiding the reflected light to an outside spectral measurement system (4-4).
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CN112213820B (en) * 2020-09-14 2022-10-14 桂林电子科技大学 MIMI type micro-nano all-optical switch based on surface plasmon resonance
CN114858340B (en) * 2022-04-26 2023-06-16 中国科学院上海微系统与信息技术研究所 Pressure sensor and preparation method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014064602A2 (en) * 2012-10-22 2014-05-01 Gressels Jonathan Novel photobioreactor for enclosed horizontal cultivation of microalgae
CN108195494A (en) * 2018-03-13 2018-06-22 南京信息工程大学 A kind of optical pressure sensor and pressure detection method based on slit surface phasmon effect
CN109613632A (en) * 2018-12-03 2019-04-12 东南大学 Tunable cavity and preparation method thereof based on flexible surface phasmon coupler
CN109738094A (en) * 2019-01-30 2019-05-10 苏州大学 A kind of wireless pressure sensor and preparation method thereof
CN110031140A (en) * 2019-04-26 2019-07-19 电子科技大学中山学院 Pressure detection structure based on optical signal and use method thereof
CN110044393A (en) * 2019-04-28 2019-07-23 南京信息工程大学 Measuring multiple parameters sensing chip and preparation method based on phasmon effect
CN110441843A (en) * 2019-08-14 2019-11-12 深圳先进技术研究院 A kind of optical device based on the resonance of surface phasmon lattice point

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN207881870U (en) * 2018-03-13 2018-09-18 南京信息工程大学 A kind of optical pressure sensor based on slit surface phasmon effect

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014064602A2 (en) * 2012-10-22 2014-05-01 Gressels Jonathan Novel photobioreactor for enclosed horizontal cultivation of microalgae
CN108195494A (en) * 2018-03-13 2018-06-22 南京信息工程大学 A kind of optical pressure sensor and pressure detection method based on slit surface phasmon effect
CN109613632A (en) * 2018-12-03 2019-04-12 东南大学 Tunable cavity and preparation method thereof based on flexible surface phasmon coupler
CN109738094A (en) * 2019-01-30 2019-05-10 苏州大学 A kind of wireless pressure sensor and preparation method thereof
CN110031140A (en) * 2019-04-26 2019-07-19 电子科技大学中山学院 Pressure detection structure based on optical signal and use method thereof
CN110044393A (en) * 2019-04-28 2019-07-23 南京信息工程大学 Measuring multiple parameters sensing chip and preparation method based on phasmon effect
CN110441843A (en) * 2019-08-14 2019-11-12 深圳先进技术研究院 A kind of optical device based on the resonance of surface phasmon lattice point

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