CN110044393A - Measuring multiple parameters sensing chip and preparation method based on phasmon effect - Google Patents
Measuring multiple parameters sensing chip and preparation method based on phasmon effect Download PDFInfo
- Publication number
- CN110044393A CN110044393A CN201910348875.3A CN201910348875A CN110044393A CN 110044393 A CN110044393 A CN 110044393A CN 201910348875 A CN201910348875 A CN 201910348875A CN 110044393 A CN110044393 A CN 110044393A
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- multiple parameters
- sensing chip
- measuring multiple
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- array
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- 230000000694 effects Effects 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229920000642 polymer Polymers 0.000 claims abstract description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- 239000000017 hydrogel Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000004005 microsphere Substances 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000010849 ion bombardment Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000011664 signaling Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000502 dialysis Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
- G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The present invention discloses a kind of measuring multiple parameters sensing chip and preparation method based on phasmon effect, chip includes thermal expansion polymer bottom, endless metal slit array is provided on the bottom, the silver-colored slit inner circle of annular is metal block, and the metal block is attached on thermal expansion polymer bottom.The present invention can know the specific variable quantity of SPP resonant wavelength according to spectrometer, to carry out the measuring multiple parameters of temperature and pressure, temperature and pressure sensing measurement is combined into one by the present invention, improves sensitivity and integrated level, and easy to manufacture, at low cost.
Description
Technical field
The present invention relates to measurement sensing chip and preparations, and in particular to a kind of measuring multiple parameters based on phasmon effect
Sensing chip and preparation method.
Background technique
Current temperature sensor is thermistor and thermocouple, both traditional temperature sensing not only sensitivity mostly
Low, stability is bad and difficult integrated.And the preparation price of infrared temperature sensor is very high, someone, which uses, has temperature sensitive
Three layers of SPR structure of layer propose a kind of optic temperature sensor, and somebody is to be integrated into one kind that the SPP structure of optical fiber proposes
Remote temperature sensor.But what these current temperature sensors mainly utilized is the influence of temperature refractive index, and susceptibility compares
Low, stability is bad.
Summary of the invention
Goal of the invention: the object of the present invention is to provide a kind of measuring multiple parameters sensing chip based on phasmon effect and
Preparation method solves the problem that existing temperature sensor sensitivity is low, and stability is bad, and hardly possible integrates.
Technical solution: the measuring multiple parameters sensing chip of the present invention based on phasmon effect, including thermal expansion
Polymer base coat is provided with endless metal slit array on the bottom, and the endless metal slit inner circle is metal block, described
Metal block is attached on thermal expansion polymer bottom.
It further include shell, the casing is outside thermal expansion polymer bottom to make internal structure stablize safety.
For that can generate corresponding physical structure and chemical property, the thermal expansion polymer bottom is hydrogel bottom
Layer.
The metal is gold or silver.
The endless metal slit array is one-dimensional endless metal slit array or two-dimensional annular metallic slit array.
The preparation method of measuring multiple parameters sensing chip of the present invention based on phasmon effect, including following step
It is rapid:
(1) pass through compound PS micro-sphere array on a glass substrate, fill silicon dioxde solution between micro-sphere array, then use
O2Reaction carries out RIE etching plating Ag, obtains annular silver-colored slit chamber array；
(2) the bottom liner glass and SiO of ready two-dimensional annular silver slit chamber array are etched with hydrofluoric acid2Filler；
(3) the PS microballoon in structure is dissolved with tetrahydrofuran solvent, so that two-dimensional annular silver slit chamber array only remains above
The silver-colored slit of annular,
(4) structure obtained in the previous step is attached on hydrogel in turn, it is ultraviolet, Ar ion bombardment top is used after solidification
Part puts on protection shell to get measuring multiple parameters sensing chip is arrived.
The utility model has the advantages that the present invention is changed by making the gap in structure that relative displacement occur using extraneous factor temperature or pressure
Become SPP wavelength, converted optical signalling for other signals, measures suffered temperature by observing the variable quantity of SPP wavelength
And the variation of pressure, the sensitivity with superelevation, stability is good, easy of integration.
Detailed description of the invention
Fig. 1 is schematic structural view of the invention；
Fig. 2 is fabrication processing schematic diagram of the present invention；
Device optical path operation schematic diagram Fig. 3 of the invention when being using present invention test.
Specific embodiment
Invention is further explained with reference to the accompanying drawing.
It is narrow with two-dimensional silver on hydrogel as shown in Figure 1, the measuring multiple parameters sensing chip based on phasmon effect
Slot array, integral narrow slit is concave, central concave silver bullion it is independent it is attached on the hydrogel, it is whole that outside is equipped with sleeve 1-1 protection
Structure, the slit formed on hydrogel, i.e. gap can form Gap-SPP under the photon excitation of specific frequency.Temperature raising makes
Hydrogel thermal expansion makes the relative position of slit change to project upwards intermediate silver bullion, causes SPP wavelength
Variation, convert optical signalling for temperature signal to detect；Likewise, we can also be by applying pressure to intermediate silver bullion
Change the relative size of gap, by pressure signal converts optical signalling.And it can measure different at a certain temperature
Pressure or certain pressure under, measure different temperature.By calculate SPP resonant wavelength variable quantity can simultaneously into
The measuring multiple parameters of trip temperature and pressure.
As shown in Fig. 2, the measuring multiple parameters sensing chip based on phasmon effect the preparation method comprises the following steps:
(1) two-dimensional annular silver slit chamber array is prepared, which is to be arranged in glass by single layer ordered composite PS micro-sphere array
Glass bottom liner SiO2On, silicon dioxde solution is filler, uses O2Reaction carries out RIE etching, and sputtering metal membrane obtains again, wherein PS
Microballoon its diameter 200nm~690nm, splash-proofing sputtering metal thickness 30nm~80nm in structure, material are gold or silver.
(2) the bottom liner glass and SiO of ready two-dimensional annular silver slit chamber array are etched with hydrofluoric acid2Filler,
Reaction equation are as follows: SiO2+ 4HF=SiF4+2H2O。
(3) the PS microballoon in structure is dissolved with tetrahydrofuran solvent again, so that two-dimensional annular silver slit chamber array only remains
The silver-colored slit of annular in face, it is attached on hydrogel in turn, ultraviolet, solidification, is obtained such as grove shaped circumferential array, is in cell wall
Air slit.
(4) by rim portion on Ar plasma bombardment grove shaped circumferential array, the inner wall of slot and outer wall dialysis expose air
Slit is protected sleeve on hydrogel coatings after processing, is made at this point, the silver bullion among slot is independently to attach on the hydrogel
Internal structure stablizes safety to get measuring multiple parameters sensing chip is arrived.
As shown in figure 3, when using present invention measurement: by utilizing extraneous factor such as temperature, pressure, making the gap in structure
Relative displacement occurs, changes SPP wavelength, converts optical signalling for other signals, incident light is passed through by light source 3-3 by optical fiber
3-2 is impinged perpendicularly on measuring multiple parameters sensing chip 3-1, when being changed by factors such as temperature or pressure, is independently attached to
Relative displacement occurs for the silver bullion on hydrogel, and such as when temperature increases or pressure reduces, relative displacement occurs for silver bullion, and slit becomes
Greatly, waveform red shift is learnt by spectrometer 3-4, the variation of suffered temperature and pressure is measured by the variable quantity of SPP wavelength.
Claims (6)
1. a kind of measuring multiple parameters sensing chip based on phasmon effect, which is characterized in that including thermal expansion polymer bottom
Layer, endless metal slit array is provided on the bottom, the endless metal slit inner circle is metal block, and the metal block is attached
On thermal expansion polymer bottom.
2. the measuring multiple parameters sensing chip according to claim 1 based on phasmon effect, which is characterized in that also wrap
Shell is included, the casing is outside thermal expansion polymer bottom.
3. the measuring multiple parameters sensing chip according to claim 1 based on phasmon effect, which is characterized in that described
Thermal expansion polymer bottom is hydrogel bottom.
4. the measuring multiple parameters sensing chip according to claim 1 based on phasmon effect, which is characterized in that described
Metal is gold or silver.
5. the measuring multiple parameters sensing chip according to claim 1 based on phasmon effect, which is characterized in that described
Endless metal slit array is one-dimensional endless metal slit array or two-dimensional annular metallic slit array.
6. the preparation method of the measuring multiple parameters sensing chip based on phasmon effect as described in claim 1, feature
It is, comprising the following steps:
(1) pass through compound PS micro-sphere array on a glass substrate, fill silicon dioxde solution between micro-sphere array, then use O2Instead
RIE etching plating Ag should be carried out, annular silver-colored slit chamber array is obtained；
(2) the bottom liner glass and SiO of ready two-dimensional annular silver slit chamber array are etched with hydrofluoric acid2Filler；
(3) the PS microballoon in structure is dissolved with tetrahydrofuran solvent, so that two-dimensional annular silver slit chamber array only remains ring above
Shape silver slit,
(4) structure obtained in the previous step is attached on hydrogel in turn, it is ultraviolet, with edge on Ar ion bombardment after solidification
Point, protection shell is put on to get measuring multiple parameters sensing chip is arrived.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910348875.3A CN110044393B (en) | 2019-04-28 | 2019-04-28 | Multi-parameter measurement sensing chip based on plasmon effect and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910348875.3A CN110044393B (en) | 2019-04-28 | 2019-04-28 | Multi-parameter measurement sensing chip based on plasmon effect and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110044393A true CN110044393A (en) | 2019-07-23 |
| CN110044393B CN110044393B (en) | 2021-05-11 |
Family
ID=67279848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910348875.3A Active CN110044393B (en) | 2019-04-28 | 2019-04-28 | Multi-parameter measurement sensing chip based on plasmon effect and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110487453A (en) * | 2019-08-23 | 2019-11-22 | 中山科立特光电科技有限公司 | A kind of device using optical instrument measurement slight pressure |
| CN110907075A (en) * | 2019-12-06 | 2020-03-24 | 云南师范大学 | Shearing force detection device based on optical fiber |
| CN110907057A (en) * | 2019-12-05 | 2020-03-24 | 西安柯莱特信息科技有限公司 | Sensor with adjustable circular dichroism absorption |
| CN110926666A (en) * | 2019-12-10 | 2020-03-27 | 中国科学院深圳先进技术研究院 | Pressure sensing device based on surface plasmon polariton lattice resonance |
| CN110926667A (en) * | 2019-12-11 | 2020-03-27 | 中国科学院深圳先进技术研究院 | Pressure sensing device based on asymmetric periodic surface plasmon lattice resonance |
| CN113607302A (en) * | 2021-08-10 | 2021-11-05 | 云南师范大学 | Temperature detection device based on surface plasmon |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110487453A (en) * | 2019-08-23 | 2019-11-22 | 中山科立特光电科技有限公司 | A kind of device using optical instrument measurement slight pressure |
| CN110487453B (en) * | 2019-08-23 | 2021-09-17 | 杭州翔毅科技有限公司 | Device for measuring micro pressure by optical means |
| CN110907057A (en) * | 2019-12-05 | 2020-03-24 | 西安柯莱特信息科技有限公司 | Sensor with adjustable circular dichroism absorption |
| CN110907057B (en) * | 2019-12-05 | 2021-08-24 | 杭州翔毅科技有限公司 | Sensor with adjustable circular dichroism absorption |
| CN110907075A (en) * | 2019-12-06 | 2020-03-24 | 云南师范大学 | Shearing force detection device based on optical fiber |
| CN110926666A (en) * | 2019-12-10 | 2020-03-27 | 中国科学院深圳先进技术研究院 | Pressure sensing device based on surface plasmon polariton lattice resonance |
| CN110926666B (en) * | 2019-12-10 | 2021-12-03 | 中国科学院深圳先进技术研究院 | Pressure sensing device based on surface plasmon polariton lattice resonance |
| CN110926667A (en) * | 2019-12-11 | 2020-03-27 | 中国科学院深圳先进技术研究院 | Pressure sensing device based on asymmetric periodic surface plasmon lattice resonance |
| CN113607302A (en) * | 2021-08-10 | 2021-11-05 | 云南师范大学 | Temperature detection device based on surface plasmon |
| CN113607302B (en) * | 2021-08-10 | 2024-02-02 | 云南师范大学 | Temperature detection device based on surface plasmon |
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