CN109324372A - A kind of silicon optical waveguide end coupling device - Google Patents
A kind of silicon optical waveguide end coupling device Download PDFInfo
- Publication number
- CN109324372A CN109324372A CN201811331594.9A CN201811331594A CN109324372A CN 109324372 A CN109324372 A CN 109324372A CN 201811331594 A CN201811331594 A CN 201811331594A CN 109324372 A CN109324372 A CN 109324372A
- Authority
- CN
- China
- Prior art keywords
- optical waveguide
- waveguide
- sandwich layer
- mould spot
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 281
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 230000008878 coupling Effects 0.000 title claims abstract description 38
- 238000010168 coupling process Methods 0.000 title claims abstract description 38
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 38
- 230000006835 compression Effects 0.000 claims abstract description 73
- 238000007906 compression Methods 0.000 claims abstract description 73
- 230000005540 biological transmission Effects 0.000 claims abstract description 55
- 239000013307 optical fiber Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 242
- 239000000463 material Substances 0.000 claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 229910052681 coesite Inorganic materials 0.000 claims description 15
- 229910052906 cristobalite Inorganic materials 0.000 claims description 15
- 229910052682 stishovite Inorganic materials 0.000 claims description 15
- 229910052905 tridymite Inorganic materials 0.000 claims description 15
- 239000012792 core layer Substances 0.000 claims description 9
- 238000004891 communication Methods 0.000 abstract description 10
- 239000000835 fiber Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000000926 separation method Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 241000220479 Acacia Species 0.000 description 1
- 235000010643 Leucaena leucocephala Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- OVSQVDMCBVZWGM-QSOFNFLRSA-N quercetin 3-O-beta-D-glucopyranoside Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1=C(C=2C=C(O)C(O)=CC=2)OC2=CC(O)=CC(O)=C2C1=O OVSQVDMCBVZWGM-QSOFNFLRSA-N 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The present invention relates to a kind of silicon optical waveguide end coupling devices, belong to semiconductor optical communication technical field.The silicon optical waveguide end coupling device, including sandwich layer optical waveguide, mould spot compression optical waveguide, substrate silicon, under-clad layer and top covering, sandwich layer optical waveguide includes the reversed tapered transmission line of sequentially connected sandwich layer optical waveguide and the straight wave guide of sandwich layer optical waveguide, and mould spot compression optical waveguide includes sequentially connected input straight wave guide, the compression capitate waveguide of mould spot and mould spot compression output waveguide.Silicon optical waveguide end coupling device in the present invention solves critical issue existing for existing silicon light-fiber coupler there are two types of in application, has comprehensive excellent optical fiber property, high reliability and the characteristic for being easy to encapsulate.
Description
Technical field
The present invention relates to a kind of silicon optical waveguide end coupling devices, belong to semiconductor optical communication technical field.
Background technique
Silicon photon chip is nearly more than 20 years burning hot Communication Studies fields, based on long-term research and development, part at present
Product has gradually obtained small volume production application, and the 100G of 100G PSM4 optical transceiver module and ACACIA including Intel is relevant
Optical transceiver module, only this 2 module product annual value of production have arrived at 1,000,000,000 U.S. dollars.Light compared to traditional discrete structure receives and dispatches mould
Block, the silicon optical transceiver module of 400G have more huge advantage, the company of nearly all competent domestic and international optical communication field and
Research unit all is being dedicated to developing the silicon optical transceiver module of 400G.Other than silicon optical transceiver module, silicon photon other structures
Chip is also among extensive research and development.
Inhibit one of widely applied critical issue of silicon photon chip is the coupling of optical fiber Yu silicon photon chip.With optical fiber
Coupled problem be that any one silicon photon chip or product must solve the problems, such as.Currently based on silica optical chip or
The optical waveguide size of iii-v optical chip is larger, and the optical fiber that can be 10 microns with sandwich layer diameter carries out efficient coupling.Silicon photon
Optical waveguide in chip is nanowire structure, and size is in several hundred nanometers, the mould field size of optical waveguide and the mould of standard fiber
Spot size difference is huge, and the silicon photon generated by mould spot mismatch-fiber coupling loss is high.In response to this problem, there are two types of sides at present
Case is come the coupled problem that solves optical fiber and silicon photonic lightwave is led.First is that the coupler based on optical grating construction, advantage is coupling tolerance
Greatly, it is easy to encapsulate, coupling loss is corresponding with the thickness that silicon photonic lightwave is led, and it is thicker that silicon photonic lightwave leads thickness, grating coupling
The loss of device is lower.Grating coupler is designed in the silicon photonic waveguide of 220nm thickness, about 3 ~ 4dB/ is lost with fiber coupling
facet；It is designed in silicon photonic waveguide after 340nm, about 2dB/facet is lost in grating coupler and fiber coupling, for light
Its coupling loss of module product is excessively high.The performance deficiency of grating coupler has seriously affected its application, especially grating coupler
Polarization-Sensitive, narrow wavelength bandwidth.Another silicon photo-coupler is hanging coupler, which is based on conventional SOI wafer
It developed, for the loss for reducing coupler, which needs to empty the substrate layer below coupler by lithographic technique,
Coupler key position is in vacant state, and the core of coupler is supported by silica beam.Although the coupler
Excellent optical performance, such as low coupling loss, big wavelength bandwidth, low polarization sensitivity etc., but the structure is reliable
Property is not high, easily snaps off during Wafer Dicing and chip package, so that cost increases, inhibits yield.Both the above coupling
Clutch is the coupled structure that can be used in current silicon optical chip or product, but respectively characteristic limits its large-scale use,
Hinder the mass production and application of silicon light product.
Summary of the invention
For the above-mentioned problems of the prior art and deficiency, the present invention provides a kind of silicon optical waveguide end coupling device.This
Silicon optical waveguide end coupling device in invention solves key existing for existing silicon light-fiber coupler there are two types of in application and asks
Topic has comprehensive excellent optical fiber property, high reliability and the characteristic for being easy to encapsulate.The present invention is real by the following technical programs
It is existing.
A kind of silicon optical waveguide end coupling device, including sandwich layer optical waveguide 1, mould spot compress optical waveguide 2, substrate silicon 3, under-clad layer
4 and top covering 5, sandwich layer optical waveguide 1 include sequentially connected sandwich layer optical waveguide reversed tapered transmission line 7 and sandwich layer optical waveguide it is straight
Waveguide 6, it includes that sequentially connected input straight wave guide 8, the compression capitate waveguide 9 of mould spot and the compression of mould spot are defeated that mould spot, which compresses optical waveguide 2,
Waveguide 10 out, 3 top surface of substrate silicon are equipped with under-clad layer 4, and 4 top surface of under-clad layer is equipped with mould spot and compresses optical waveguide 2, mould spot squeezed light
2 surrounding of waveguide is completely covered by top covering 5, and sandwich layer optical waveguide 1 is located at 2 inside of mould spot compression optical waveguide and compresses optical waveguide by spot
2 is fully wrapped around, and under-clad layer 4 and 5 Refractive Index of Material of top covering are lower than mould spot compression 2 Refractive Index of Material of optical waveguide, mould spot squeezed light
2 Refractive Index of Material of waveguide is lower than 1 Refractive Index of Material of sandwich layer optical waveguide, and mould spot, which compresses, inputs 8 mode spot-size of straight wave guide in optical waveguide 2
Match with the optical signal Optical fiber speckle size of optical fiber output, mould spot compresses mould spot in optical waveguide 2 and compresses 10 optical mode of output waveguide
The 7 mould field size of reversed tapered transmission line of field size and 1 center core layer optical waveguide of sandwich layer optical waveguide matches.
The sandwich layer optical waveguide 1 is located at mould spot compression 2 center of optical waveguide.1 thickness of sandwich layer optical waveguide is in micro-nano amount
Grade；The top width of the reversed tapered transmission line 7 of sandwich layer optical waveguide is nanometer scale, such as 0.1nm ~ 150nm.
The straight wave guide 6 of the sandwich layer optical waveguide, the reversed tapered transmission line 7 of sandwich layer optical waveguide, input straight wave guide 8, mould spot pressure
Contracting capitate waveguide 9 and mould spot compression 10 waveguide type of output waveguide are slab waveguide or ridge waveguide.
1 material of sandwich layer optical waveguide is the material of Si, SiN or SiON high refractive index；Mould spot compress optical waveguide 2 be SiN,
SiON or high refractive index SiO2The material of high refractive index；Under-clad layer 4 or top covering 5 are SiON or SiO2The material of low-refraction.
SiON Refractive Index of Material becomes with O content ratio, and ranges of indices of refraction is higher than SiO between 1.5 ~ 2.02Refractive index, and it is low
In the refractive index of SiN.Material part corresponding relationship is as shown in table 1 below.
Table 1
The reversed tapered transmission line 7 of the sandwich layer optical waveguide is multiple reversed conical waves of single reversed tapered transmission line or overlapping
It leads.The reversed tapered transmission lines of multiple overlapping superpositions can effectively increase its mould field in the size of vertical direction, and large-sized defeated
Enter optical mode field to match.
The approximate refractive index of one or more overlappings is equipped at the top of the input straight wave guide 8, the compression capitate waveguide 9 of mould spot
Material horizontal capitate waveguide.This structure can be effectively compressed the mode spot-size of input light in vertical direction, can be with sandwich layer
Optical waveguide 1 matches.
The sectional dimension of above-mentioned input straight wave guide 8 is in micron dimension, such as 10 μm of 3 μ m, 3 μm ~ 10 μ m.Sandwich layer light wave
The top for the reversed tapered transmission line 7 led can be located inside straight wave guide output 10, can also be located at mould spot and compress tapered transmission line 9 or defeated
Enter inside straight wave guide 8.
This silicon optical waveguide end coupling device working principle are as follows: compress optical waveguide with mould spot first from the optical signal of optical fiber output
2 input straight wave guide 8 is coupled, and when the mode spot-size and Optical fiber speckle size that input straight wave guide 8 match, optical signal can
Input straight wave guide 8 is coupled into from optical fiber low-loss；After optical signal enters input straight wave guide 8, the outer layer of input straight wave guide 8 is folding
The lower under-clad layer 4 of rate and top covering 5 are penetrated, all light can stablize transmission in input straight wave guide 8.Optical signal is from inputting straight wave
It leads after entering in mould spot compression tapered transmission line 9 in 8, optical mode field enters after being compressed in the horizontal direction by mould spot compression tapered transmission line 9
In straight wave guide output 10.By design, make the mould field size of the reversed tapered transmission line 7 of 1 center core layer optical waveguide of sandwich layer optical waveguide with
The optical mode field of straight wave guide output 10 matches, the optical signal in straight wave guide output 10 also can low-loss enter sandwich layer optical waveguide
Reversed tapered transmission line 7, that is, enter sandwich layer waveguide 1, corresponds to clad material since the Refractive Index of Material of sandwich layer optical waveguide 1 is higher than it
(at this point, covering that mould spot compression optical waveguide 2 is sandwich layer optical waveguide 1), optical signal being capable of the low damage transmission in sandwich layer optical waveguide 1.
Finally, the end construction of the reversed tapered transmission line 7 of sandwich layer optical waveguide is identical as 6 input end structure of straight wave guide of sandwich layer optical waveguide,
Optical signal from the reversed tapered transmission line 7 of sandwich layer optical waveguide enter sandwich layer optical waveguide straight wave guide 6, complete optical signal from optical fiber into
Enter the coupling of sandwich layer optical waveguide 1.
Coupler of the invention is that (the separation layer refractive index close to substrate is relatively low, leans on for the SOI wafer based on the double-deck separation layer
The separation layer refractive index of nearly top layer silicon is higher), it may be implemented using the semiconductor technology compatible with CMOS technology, mainly integrate work
Skill process is as follows.
Step 1: carrying out photoetching process in the SOI wafer of the double-deck separation layer, pass through whirl coating, exposure, development, baking etc.
Step forms the photoetching offset plate figure of sandwich layer optical waveguide in top layer silicon.
Step 2: performing etching using photoresist as exposure mask to top layer silicon by semiconductor etching techniques, silicon substrate light is formed
Waveguiding structure, i.e. sandwich layer optical waveguide.It then removed photoresist, cleaned.
Step 3: carrying out dielectric material deposition in silicon substrate optical waveguide, the upper layer of material of dielectric material and separation layer (is leaned on
The insolated layer materials of nearly top layer silicon) identical or both refractive index is approximate.The upper layer of material of this layer of dielectric material and separation layer is mould
The component part of spot compression optical waveguide.After deposits dielectric materials, by physical chemistry polishing process, to layer of dielectric material upper surface
It is polished, forms smooth plane.
Step 4: carry out photoetching process in the enterprising row of metallization medium layer, by whirl coating, exposure, development, baking and etc.
The photoetching offset plate figure of mould spot compression optical waveguide is formed in top layer silicon.
Step 5:, using photoresist as exposure mask, being carried out to metallization medium layer and separation layer upper layer by semiconductor etching techniques
Etching forms optical waveguide structure, i.e. mould spot compresses optical waveguide.It then removed photoresist, cleaned.
Step 6: depositing top covering, the material and under-clad layer material (SOI wafer of top covering in mould spot compression optical waveguide
Close to the separation layer of substrate silicon layer) identical or both refractive index is approximate, and carries out surface polishing.By scribing, the present invention is obtained
The end coupling device of proposition.
The beneficial effects of the present invention are: realizing optical fiber and nano wire the present invention is based on the SOI wafer of the double-deck insulation layer structure
End coupling device between silicon optical waveguide, technique are completely compatible with CMOS technology.End coupling device in the present invention is in structure
On the shortcomings that completely solving existing hanging coupler, have lower coupling loss, low polarization loss, coupling tolerance, structure greatly steady
The characteristics such as qualitative high, easy encapsulation and mass production, may be implemented low cost, facilitate the extensive use of silicon optical device.This hair
It is bright to have a wide range of applications in research fields such as communication, military affairs, medical treatment, biologies.
Detailed description of the invention
Fig. 1 is three dimensional structure diagram of the present invention；
Fig. 2 is side cross-section schematic diagram of the present invention；
Fig. 3 is structure of the invention schematic top plan view.
Fig. 4 is a kind of corresponding technique flow process chart of structure of the invention.
In figure: 1- sandwich layer optical waveguide, 2- mould spot compress optical waveguide, 3- substrate silicon, 4- under-clad layer, 5- top covering, 6- sandwich layer
The straight wave guide of optical waveguide, the reversed tapered transmission line of 7- sandwich layer optical waveguide, 8- input straight wave guide, and 9- mould spot compresses capitate waveguide, 10-
Mould spot compresses output waveguide.
Specific embodiment
With reference to the accompanying drawings and detailed description, the invention will be further described.
Embodiment 1
As shown in Figures 1 to 3, the silicon optical waveguide end coupling device, including sandwich layer optical waveguide 1, mould spot compress optical waveguide 2, substrate silicon
3, under-clad layer 4 and top covering 5, sandwich layer optical waveguide 1 include the reversed tapered transmission line 7 and sandwich layer light of sequentially connected sandwich layer optical waveguide
The straight wave guide 6 of waveguide, it includes sequentially connected input straight wave guide 8, the compression capitate waveguide 9 of mould spot and mould that mould spot, which compresses optical waveguide 2,
Spot compresses output waveguide 10, and 3 top surface of substrate silicon is equipped with under-clad layer 4, and 4 top surface of under-clad layer is equipped with mould spot and compresses optical waveguide 2, mould
Spot compression 2 surrounding of optical waveguide is completely covered by top covering 5, and sandwich layer optical waveguide 1 is located at 2 inside of mould spot compression optical waveguide and by spot pressure
Contracting optical waveguide 2 is fully wrapped around, and under-clad layer 4 and 5 Refractive Index of Material of top covering are lower than mould spot compression 2 Refractive Index of Material of optical waveguide, mould
Spot compresses 2 Refractive Index of Material of optical waveguide and is lower than 1 Refractive Index of Material of sandwich layer optical waveguide, and specific material is as shown in table 2.Mould spot squeezed light
8 mode spot-size of straight wave guide is inputted in waveguide 2 and the optical signal Optical fiber speckle size of optical fiber output matches, and mould spot compresses optical waveguide
The 7 mould field ruler of reversed tapered transmission line of the compression of mould spot 10 optical mode field size of output waveguide and 1 center core layer optical waveguide of sandwich layer optical waveguide in 2
It is very little to match；The sandwich layer optical waveguide 1 is located at mould spot compression 2 center of optical waveguide, the reversed tapered transmission line 7 of sandwich layer optical waveguide
Top can be located inside straight wave guide output 10.
The straight wave guide 6 of the sandwich layer optical waveguide, the reversed tapered transmission line 7 of sandwich layer optical waveguide, input straight wave guide 8, mould spot pressure
Contracting capitate waveguide 9 and mould spot compression 10 waveguide type of output waveguide are slab waveguide.
Table 2
The reversed tapered transmission line 7 of the sandwich layer optical waveguide is single reversed tapered transmission line.The input straight wave guide 8, the compression of mould spot
An approximate refractive index material horizontal capitate waveguide is equipped at the top of capitate waveguide 9.
Device size and manufacturing process are as follows: selecting diameter is 8 inches of double separation layer SOI wafers, and parameter is as follows: lining
Bottom silicon thickness is 725 μm；Separation layer of the under-clad layer 4(upper layer separation layer close to substrate silicon) it is pure SiO2Layer, with a thickness of
500nm is 1.45 in communication band refractive index；(i.e. close to the separation layer of top layer silicon, this separation layer is on the upper layer of the double-deck separation layer
Mould spot compresses a part of optical waveguide 2, as shown in Figure 4) it is low-doped SiO2Layer, with a thickness of 5 μm, refractive index 1.46；Top
Layer silicon is intrinsic silicon material, and with a thickness of 110nm, communication band refractive index is 3.47.Firstly, by photoetching and silicon etching process,
Sandwich layer optical waveguide 1, the tip width of the reversed tapered transmission line 7 of the sandwich layer optical waveguide of sandwich layer optical waveguide 1 are produced in top layer silicon
For 50nm and the structure length is 25 μm, and the width of the straight wave guide 6 of sandwich layer optical waveguide is 500nm；Then, in sandwich layer optical waveguide 1
The SiO that upper deposition refractive index is 1.462Layer, with a thickness of 5.3 μm；By the deposition SiO for reversely etching 200nm2It is thrown after layer
Light obtains the 1 disposed thereon SiO of sandwich layer optical waveguide of smooth surface2Layer, and with a thickness of with a thickness of 5.3 μm；Pass through photoetching and SiO2
Lithographic technique, etching deposition SiO2The upper layer of layer and SOI separation layer forms mould spot compression optical waveguide 2(, that is, mould spot and compresses optical waveguide
2 be by depositing SiO2The upper layer of layer and SOI separation layer forms, and refractive index is that 1.46), the section of input straight wave guide 8 is 10 μm
× 10 μm (matching with optical fiber mode fields) and length are 50 μm, and the mould spot compression output width of tapered transmission line 9 is 5 μm and length is
100µm；2 ~ 4 μ m thicks finally are deposited in mould spot compression optical waveguide 2, the SiO that refractive index is 1.452Layer is used as top covering, throws
Smooth upper surface is obtained after light.
Embodiment 2
As shown in Figures 1 to 3, the silicon optical waveguide end coupling device, including sandwich layer optical waveguide 1, mould spot compress optical waveguide 2, substrate silicon
3, under-clad layer 4 and top covering 5, sandwich layer optical waveguide 1 include the reversed tapered transmission line 7 and sandwich layer light of sequentially connected sandwich layer optical waveguide
The straight wave guide 6 of waveguide, it includes sequentially connected input straight wave guide 8, the compression capitate waveguide 9 of mould spot and mould that mould spot, which compresses optical waveguide 2,
Spot compresses output waveguide 10, and 3 top surface of substrate silicon is equipped with under-clad layer 4, and 4 top surface of under-clad layer is equipped with mould spot and compresses optical waveguide 2, mould
Spot compression 2 surrounding of optical waveguide is completely covered by top covering 5, and sandwich layer optical waveguide 1 is located at 2 inside of mould spot compression optical waveguide and by spot pressure
Contracting optical waveguide 2 is fully wrapped around, and under-clad layer 4 and 5 Refractive Index of Material of top covering are lower than mould spot compression 2 Refractive Index of Material of optical waveguide, mould
Spot compresses 2 Refractive Index of Material of optical waveguide and is lower than 1 Refractive Index of Material of sandwich layer optical waveguide, and specific material is as shown in table 3.Mould spot squeezed light
8 mode spot-size of straight wave guide is inputted in waveguide 2 and the optical signal Optical fiber speckle size of optical fiber output matches, and mould spot compresses optical waveguide
The 7 mould field ruler of reversed tapered transmission line of the compression of mould spot 10 optical mode field size of output waveguide and 1 center core layer optical waveguide of sandwich layer optical waveguide in 2
It is very little to match；The sandwich layer optical waveguide 1 is located at mould spot compression 2 center of optical waveguide, the reversed tapered transmission line 7 of sandwich layer optical waveguide
Top can be located inside straight wave guide output 10.
The straight wave guide 6 of the sandwich layer optical waveguide, the reversed tapered transmission line 7 of sandwich layer optical waveguide, input straight wave guide 8, mould spot pressure
Contracting capitate waveguide 9 and mould spot compression 10 waveguide type of output waveguide are ridge waveguide.
Table 3
The approximate refractive index material horizontal hammer of multiple overlappings is equipped at the top of the input straight wave guide 8, the compression capitate waveguide 9 of mould spot
Shape waveguide.
Device size and manufacturing process are as follows: selecting diameter is 8 inches of monocrystalline silicon wafer crystal, and silicon thickness is 725 μm；It is logical
Peroxidating produces with a thickness of 2 μm of SiO2Layer is used as under-clad layer 4；Again by PECVD sedimentation deposited on under-clad layer 43 μ m-thicks,
Upper layer of the SiON layer that refractive index is 1.60 as double separation layers, surface is polished；Passing through LPCVD method, at SiON layers
The SiN layer (core layer that this layer is sandwich layer optical waveguide 1) of upper deposition 300nm thickness, SiN layer is 2.0 in communication band refractive index；It is logical
Photoetching and SiN etching technics are crossed, sandwich layer optical waveguide 1, the reversed tapered transmission line 7 of sandwich layer optical waveguide 1 are produced in top layer SiN layer
Tip width be 100nm and the structure length is 50 μm, the width of the straight wave guide 6 of sandwich layer optical waveguide is 600nm；Then, exist
The SiON layer that refractive index is 1.60 is deposited in sandwich layer optical waveguide 1, with a thickness of 3.4 μm；By the deposition for reversely etching 300nm
It is polished after SiON layers, obtains SiON layers of 1 disposed thereon of sandwich layer optical waveguide of smooth surface, and with a thickness of with a thickness of 3 μm；It is logical
Photoetching and SiON lithographic technique are crossed, upper layer SiON layers of SiON layers of etching deposition and separation layer, mould spot is formed and compresses optical waveguide 2
(i.e. mould spot compression optical waveguide 2 is SiON layers, and refractive index is that 1.60), the section of input straight wave guide 8 is 6 μm of 6 μ m (with optical fiber
Mould field matches) and length be 50 μm, it is 5 μm and length is 100 μm that mould spot, which compresses tapered transmission line 9 to export width,；Finally in mould
Spot, which compresses, deposits 2 ~ 4 μ m thicks, refractive index as 1.45 SiO in optical waveguide 22Layer is used as top covering, obtains after polishing smooth
Upper surface.
Embodiment 3
As shown in Figures 1 to 3, the silicon optical waveguide end coupling device, including sandwich layer optical waveguide 1, mould spot compress optical waveguide 2, substrate silicon
3, under-clad layer 4 and top covering 5, sandwich layer optical waveguide 1 include the reversed tapered transmission line 7 and sandwich layer light of sequentially connected sandwich layer optical waveguide
The straight wave guide 6 of waveguide, it includes sequentially connected input straight wave guide 8, the compression capitate waveguide 9 of mould spot and mould that mould spot, which compresses optical waveguide 2,
Spot compresses output waveguide 10, and 3 top surface of substrate silicon is equipped with under-clad layer 4, and 4 top surface of under-clad layer is equipped with mould spot and compresses optical waveguide 2, mould
Spot compression 2 surrounding of optical waveguide is completely covered by top covering 5, and sandwich layer optical waveguide 1 is located at 2 inside of mould spot compression optical waveguide and by spot pressure
Contracting optical waveguide 2 is fully wrapped around, and under-clad layer 4 and 5 Refractive Index of Material of top covering are lower than mould spot compression 2 Refractive Index of Material of optical waveguide, mould
Spot compresses 2 Refractive Index of Material of optical waveguide and is lower than 1 Refractive Index of Material of sandwich layer optical waveguide, and specific material is as shown in table 4.Mould spot squeezed light
8 mode spot-size of straight wave guide is inputted in waveguide 2 and the optical signal Optical fiber speckle size of optical fiber output matches, and mould spot compresses optical waveguide
The 7 mould field ruler of reversed tapered transmission line of the compression of mould spot 10 optical mode field size of output waveguide and 1 center core layer optical waveguide of sandwich layer optical waveguide in 2
It is very little to match；The sandwich layer optical waveguide 1 is located at mould spot compression 2 center of optical waveguide, the reversed tapered transmission line 7 of sandwich layer optical waveguide
Top can be located inside straight wave guide output 10.
The straight wave guide 6 of the sandwich layer optical waveguide, the reversed tapered transmission line 7 of sandwich layer optical waveguide, input straight wave guide 8, mould spot pressure
Contracting capitate waveguide 9 and mould spot compression 10 waveguide type of output waveguide are ridge waveguide.
Table 4
The reversed tapered transmission line 7 of the sandwich layer optical waveguide is folded multiple reversed tapered transmission lines.The input straight wave guide 8, mould spot
The approximate refractive index material horizontal capitate waveguide of multiple overlappings is equipped at the top of compression capitate waveguide 9.
Device size and manufacturing process are as follows: selecting diameter is 8 inches of double separation layer SOI wafers, and parameter is as follows: lining
Bottom silicon thickness is 725 μm；Separation layer of the under-clad layer 4(upper layer separation layer close to substrate silicon) it is pure SiO2Layer, with a thickness of
500nm is 1.45 in communication band refractive index；(i.e. close to the separation layer of top layer silicon, this separation layer is on the upper layer of the double-deck separation layer
Mould spot compresses a part of optical waveguide 2, as shown in Figure 4) it is low-doped SiO2Layer, with a thickness of 5 μm, refractive index 1.46；Top
Layer silicon is intrinsic silicon material, and with a thickness of 220nm, communication band refractive index is 3.47.Firstly, passing through photoetching and two step silicon etching works
Skill, produces sandwich layer optical waveguide 1 in top layer silicon, and the reversed tapered transmission line 7 of sandwich layer optical waveguide 1 is by the reversed biconial wave that is overlapped
Lead composition, two tapered transmission line tip widths are for 50nm and length is 25 μm, the tip of lower section tapered transmission line preceding and
With a thickness of 100nm, top tapered transmission line is located below the top of tapered transmission line and its tip is behind the tapered transmission line tip of lower section
15 μm of side, the sum for being overlapped biconial duct thickness are identical as the thickness 220nm of top layer silicon；The width of the straight wave guide 6 of sandwich layer optical waveguide
Degree is 500nm；Then, the SiO that refractive index is 1.46 is deposited in sandwich layer optical waveguide 12Layer, with a thickness of 5.3 μm；By reversed
Etch the deposition SiO of 200nm2It is polished after layer, obtains the 1 disposed thereon SiO of sandwich layer optical waveguide of smooth surface2Layer, and thickness
For with a thickness of 5.3 μm；Pass through photoetching and SiO2Lithographic technique, etching deposition SiO2The upper layer of layer and SOI separation layer forms mould spot
Compression optical waveguide 2(, that is, mould spot compression optical waveguide 2 is by depositing SiO2The upper layer of layer and SOI separation layer forms, and refractive index is
1.46) section for, inputting straight wave guide 8 is 10 μ m 10 μm (matching with optical fiber mode fields) and length is 50 μm, mould spot compression cone
The output width of shape waveguide 9 is 5 μm and length is 100 μm；Finally 2 ~ 4 μ m thicks, refractive index are deposited in mould spot compression optical waveguide 2
For 1.45 SiO2Layer is used as top covering, and smooth upper surface is obtained after polishing.
Embodiment 4
The silicon optical waveguide end coupling device, including sandwich layer optical waveguide 1, mould spot compression optical waveguide 2, substrate silicon 3, under-clad layer 4 and on
Covering 5, sandwich layer optical waveguide 1 include the reversed tapered transmission line 7 of sequentially connected sandwich layer optical waveguide and the straight wave guide of sandwich layer optical waveguide
6, it includes that sequentially connected input straight wave guide 8, the compression capitate waveguide 9 of mould spot and mould spot compress output wave that mould spot, which compresses optical waveguide 2,
10 are led, 3 top surface of substrate silicon is equipped with under-clad layer 4, and 4 top surface of under-clad layer is equipped with mould spot and compresses optical waveguide 2, and mould spot compresses optical waveguide
2 surroundings are completely covered by top covering 5, and sandwich layer optical waveguide 1 is located inside mould spot compression optical waveguide 2 and complete by spot compression optical waveguide 2
Full package, under-clad layer 4 and 5 Refractive Index of Material of top covering compress 2 Refractive Index of Material of optical waveguide lower than mould spot, and mould spot compresses optical waveguide
2 Refractive Index of Material are lower than 1 Refractive Index of Material of sandwich layer optical waveguide, and specific material is as shown in table 4.It is inputted in mould spot compression optical waveguide 2
The optical signal Optical fiber speckle size of 8 mode spot-size of straight wave guide and optical fiber output matches, and mould spot compresses mould spot compression in optical waveguide 2
10 optical mode field size of output waveguide and the 7 mould field size of reversed tapered transmission line of 1 center core layer optical waveguide of sandwich layer optical waveguide match；Institute
It states sandwich layer optical waveguide 1 and is located at mould spot compression 2 center of optical waveguide, can be located at the top of the reversed tapered transmission line 7 of sandwich layer optical waveguide
It inputs inside straight wave guide 8.
Embodiment 5
The silicon optical waveguide end coupling device, including sandwich layer optical waveguide 1, mould spot compression optical waveguide 2, substrate silicon 3, under-clad layer 4 and on
Covering 5, sandwich layer optical waveguide 1 include the reversed tapered transmission line 7 of sequentially connected sandwich layer optical waveguide and the straight wave guide of sandwich layer optical waveguide
6, it includes that sequentially connected input straight wave guide 8, the compression capitate waveguide 9 of mould spot and mould spot compress output wave that mould spot, which compresses optical waveguide 2,
10 are led, 3 top surface of substrate silicon is equipped with under-clad layer 4, and 4 top surface of under-clad layer is equipped with mould spot and compresses optical waveguide 2, and mould spot compresses optical waveguide
2 surroundings are completely covered by top covering 5, and sandwich layer optical waveguide 1 is located inside mould spot compression optical waveguide 2 and complete by spot compression optical waveguide 2
Full package, under-clad layer 4 and 5 Refractive Index of Material of top covering compress 2 Refractive Index of Material of optical waveguide lower than mould spot, and mould spot compresses optical waveguide
2 Refractive Index of Material are lower than 1 Refractive Index of Material of sandwich layer optical waveguide, and specific material is as shown in table 4.It is inputted in mould spot compression optical waveguide 2
The optical signal Optical fiber speckle size of 8 mode spot-size of straight wave guide and optical fiber output matches, and mould spot compresses mould spot compression in optical waveguide 2
10 optical mode field size of output waveguide and the 7 mould field size of reversed tapered transmission line of 1 center core layer optical waveguide of sandwich layer optical waveguide match；Institute
It states sandwich layer optical waveguide 1 and is located at mould spot compression 2 center of optical waveguide, can be located at the top of the reversed tapered transmission line 7 of sandwich layer optical waveguide
Mould spot compresses inside capitate waveguide 9.
In conjunction with attached drawing, the embodiment of the present invention is explained in detail above, but the present invention is not limited to above-mentioned
Embodiment within the knowledge of a person skilled in the art can also be before not departing from present inventive concept
Put that various changes can be made.
Claims (6)
1. a kind of silicon optical waveguide end coupling device, it is characterised in that: including sandwich layer optical waveguide (1), mould spot compression optical waveguide (2),
Substrate silicon (3), under-clad layer (4) and top covering (5), sandwich layer optical waveguide (1) include the reversed cone of sequentially connected sandwich layer optical waveguide
The straight wave guide (6) of shape waveguide (7) and sandwich layer optical waveguide, it includes sequentially connected input straight wave guide that mould spot, which compresses optical waveguide (2),
(8), mould spot compression capitate waveguide (9) and mould spot compression output waveguide (10), substrate silicon (3) top surface are equipped with under-clad layer (4), under
Covering (4) top surface is equipped with mould spot compression optical waveguide (2), and mould spot compression optical waveguide (2) surrounding is completely covered by top covering (5),
It is internal and fully wrapped around by spot compression optical waveguide (2) that sandwich layer optical waveguide (1) is located at mould spot compression optical waveguide (2), under-clad layer (4) and
Top covering (5) Refractive Index of Material compresses optical waveguide (2) Refractive Index of Material lower than mould spot, and mould spot compresses the refraction of optical waveguide (2) material
Rate is lower than sandwich layer optical waveguide (1) Refractive Index of Material, and mould spot compresses input straight wave guide (8) mode spot-size and optical fiber in optical waveguide (2)
The optical signal Optical fiber speckle size of output matches, and mould spot compresses mould spot in optical waveguide (2) and compresses output waveguide (10) optical mode field
Reversed tapered transmission line (7) mould field size of size and sandwich layer optical waveguide (1) center core layer optical waveguide matches.
2. silicon optical waveguide end coupling device according to claim 1, it is characterised in that: the sandwich layer optical waveguide (1) is located at
Mould spot compresses optical waveguide (2) center.
3. silicon optical waveguide end coupling device according to claim 1, it is characterised in that: the straight wave guide of the sandwich layer optical waveguide
(6), the reversed tapered transmission line (7) of sandwich layer optical waveguide, input straight wave guide (8), mould spot compression capitate waveguide (9) and the compression of mould spot are defeated
Waveguide (10) waveguide type is slab waveguide or ridge waveguide out.
4. silicon optical waveguide end coupling device according to claim 1, it is characterised in that: sandwich layer optical waveguide (1) material
For the material of Si, SiN or SiON high refractive index；It is SiN, SiON or high refractive index SiO that mould spot, which compresses optical waveguide (2),2Height refraction
The material of rate；Under-clad layer (4) or top covering (5) are SiON or SiO2The material of low-refraction.
5. silicon optical waveguide end coupling device according to claim 1, it is characterised in that: the reversed cone of the sandwich layer optical waveguide
Shape waveguide (7) is multiple reversed tapered transmission lines of single reversed tapered transmission line or overlapping.
6. silicon optical waveguide end coupling device according to claim 1, it is characterised in that: the input straight wave guide (8), mould spot
The horizontal capitate waveguide of one or more overlappings is equipped at the top of compression capitate waveguide (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811331594.9A CN109324372B (en) | 2018-11-09 | 2018-11-09 | Silicon optical waveguide end face coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811331594.9A CN109324372B (en) | 2018-11-09 | 2018-11-09 | Silicon optical waveguide end face coupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109324372A true CN109324372A (en) | 2019-02-12 |
| CN109324372B CN109324372B (en) | 2024-02-09 |
Family
ID=65261200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811331594.9A Active CN109324372B (en) | 2018-11-09 | 2018-11-09 | Silicon optical waveguide end face coupler |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109324372B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111239899A (en) * | 2020-03-17 | 2020-06-05 | 联合微电子中心有限责任公司 | Method for realizing spot size conversion based on substrate SiON waveguide bonding and spot size converter |
| CN112698444A (en) * | 2021-01-12 | 2021-04-23 | 深圳市砺芯科技有限公司 | Optical waveguide spot-size converter and manufacturing method thereof |
| CN113093333A (en) * | 2021-04-23 | 2021-07-09 | 南京刻得不错光电科技有限公司 | Spot size converter and photonic device |
| CN113917613A (en) * | 2021-10-14 | 2022-01-11 | 中国科学院半导体研究所 | Silicon waveguide end face coupling structure and preparation method thereof |
| CN115390186A (en) * | 2022-08-29 | 2022-11-25 | 赛丽科技(苏州)有限公司 | Low insertion loss end face coupler |
| WO2023077364A1 (en) * | 2021-11-04 | 2023-05-11 | 华为技术有限公司 | End face coupler and optical communication device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011022464A (en) * | 2009-07-17 | 2011-02-03 | Nec Corp | Optical waveguide |
| CN203241564U (en) * | 2013-05-30 | 2013-10-16 | 青岛海信宽带多媒体技术有限公司 | Optical fiber waveguide spot size converter and optical coupler |
| CN104391354A (en) * | 2014-11-21 | 2015-03-04 | 武汉邮电科学研究院 | Coupled structure between optical fiber and high refractive index waveguide |
| CN105679875A (en) * | 2016-03-08 | 2016-06-15 | 昆明理工大学 | Waveguide integrated silicon-based single photon detector |
| CN107561640A (en) * | 2017-08-18 | 2018-01-09 | 中国科学院半导体研究所 | Silicon nanowires waveguide and optical coupling structure and preparation method thereof |
| CN108132499A (en) * | 2018-02-02 | 2018-06-08 | 苏州易缆微光电技术有限公司 | Silicon waveguide spot converter based on multilayer polymer structure and preparation method thereof |
| CN209117912U (en) * | 2018-11-09 | 2019-07-16 | 昆明理工大学 | A kind of silicon optical waveguide end coupling device |
-
2018
- 2018-11-09 CN CN201811331594.9A patent/CN109324372B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011022464A (en) * | 2009-07-17 | 2011-02-03 | Nec Corp | Optical waveguide |
| CN203241564U (en) * | 2013-05-30 | 2013-10-16 | 青岛海信宽带多媒体技术有限公司 | Optical fiber waveguide spot size converter and optical coupler |
| CN104391354A (en) * | 2014-11-21 | 2015-03-04 | 武汉邮电科学研究院 | Coupled structure between optical fiber and high refractive index waveguide |
| CN105679875A (en) * | 2016-03-08 | 2016-06-15 | 昆明理工大学 | Waveguide integrated silicon-based single photon detector |
| CN107561640A (en) * | 2017-08-18 | 2018-01-09 | 中国科学院半导体研究所 | Silicon nanowires waveguide and optical coupling structure and preparation method thereof |
| CN108132499A (en) * | 2018-02-02 | 2018-06-08 | 苏州易缆微光电技术有限公司 | Silicon waveguide spot converter based on multilayer polymer structure and preparation method thereof |
| CN209117912U (en) * | 2018-11-09 | 2019-07-16 | 昆明理工大学 | A kind of silicon optical waveguide end coupling device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111239899A (en) * | 2020-03-17 | 2020-06-05 | 联合微电子中心有限责任公司 | Method for realizing spot size conversion based on substrate SiON waveguide bonding and spot size converter |
| CN112698444A (en) * | 2021-01-12 | 2021-04-23 | 深圳市砺芯科技有限公司 | Optical waveguide spot-size converter and manufacturing method thereof |
| CN113093333A (en) * | 2021-04-23 | 2021-07-09 | 南京刻得不错光电科技有限公司 | Spot size converter and photonic device |
| CN113917613A (en) * | 2021-10-14 | 2022-01-11 | 中国科学院半导体研究所 | Silicon waveguide end face coupling structure and preparation method thereof |
| CN113917613B (en) * | 2021-10-14 | 2023-03-14 | 中国科学院半导体研究所 | Silicon waveguide end face coupling structure and preparation method thereof |
| WO2023077364A1 (en) * | 2021-11-04 | 2023-05-11 | 华为技术有限公司 | End face coupler and optical communication device |
| CN115390186A (en) * | 2022-08-29 | 2022-11-25 | 赛丽科技(苏州)有限公司 | Low insertion loss end face coupler |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109324372B (en) | 2024-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109324372A (en) | A kind of silicon optical waveguide end coupling device | |
| CN209117912U (en) | A kind of silicon optical waveguide end coupling device | |
| CN112596161B (en) | Multi-layer structured spot-size converter and implementation method thereof | |
| CN111679363B (en) | Silicon waveguide end face coupling structure and manufacturing method thereof | |
| CN109407229B (en) | End face coupler | |
| CN113640913B (en) | LNOI (Low noise optical) fundamental mode spot converter directly coupled with single-mode fiber | |
| CN108535807A (en) | With the optical fiber-silicon optical chip coupler and preparation method for tilting Waveguide end face | |
| CN114384632B (en) | Array waveguide grating and waveguide type detector-based spot size converter | |
| CN210626707U (en) | End face coupler | |
| WO2022135095A1 (en) | End face coupler and manufacturing method therefor | |
| CN109031522A (en) | A kind of grating coupler of low back-reflection | |
| CN106680932A (en) | CMOS post-process integrated high-efficiency bidirectional grating coupler | |
| CN115877506B (en) | Film lithium niobate end face coupler covering visible light wave band and preparation method thereof | |
| CN100492074C (en) | Isolator silicon back-etching total reflection perpendicular coupling structure and manufacture method | |
| CN115857091A (en) | MMI polarization beam splitter of lithium niobate thin film | |
| CN112305671A (en) | Tapered polarization beam splitter based on slit waveguide and preparation method | |
| CN112882154A (en) | Spot transformer | |
| CN113204075B (en) | Micro-nano optical fiber-waveguide-superconducting nanowire single photon detector and preparation method thereof | |
| CN111458795A (en) | Full-wave-band polarizer based on silicon waveguide | |
| CN108241190A (en) | A kind of edge coupling optic and optical communication system | |
| US20220365281A1 (en) | Multi-tip optical coupling devices | |
| CN113970808B (en) | Preparation method for mode field conversion coupling structure and preparation structure thereof | |
| CN111538119B (en) | Preparation method of three-dimensional photoelectric interconnection substrate | |
| CN206848508U (en) | Directional coupled TM based on sub-wave length grating is polarized beam splitter | |
| CN214845885U (en) | Polarization-independent LNOI end face coupling structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200814 Address after: No.1 building, science and innovation headquarters, Shenzhen (Harbin) Industrial Park, 288 Zhigu street, Songbei District, Harbin, Heilongjiang Province Applicant after: Harbin Zhongda Electronic Co.,Ltd. Address before: 650093 Kunming, Yunnan, Wuhua District Road, No. 253 Applicant before: Kunming University of Science and Technology |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210804 Address after: 201306 building C, No. 888, Huanhu West 2nd Road, Lingang New Area, Pudong New Area, Shanghai Applicant after: Yipu (Shanghai) semiconductor manufacturing Co.,Ltd. Address before: Building 1, science and innovation headquarters, Shenzhen (Harbin) Industrial Park, 288 Zhigu street, Songbei District, Harbin City, Heilongjiang Province Applicant before: Harbin Zhongda Electronic Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |