CN113970808A - Preparation method and preparation structure for mode field conversion coupling structure - Google Patents
Preparation method and preparation structure for mode field conversion coupling structure Download PDFInfo
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- CN113970808A CN113970808A CN202111371183.4A CN202111371183A CN113970808A CN 113970808 A CN113970808 A CN 113970808A CN 202111371183 A CN202111371183 A CN 202111371183A CN 113970808 A CN113970808 A CN 113970808A
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- 230000008878 coupling Effects 0.000 title claims abstract description 53
- 238000010168 coupling process Methods 0.000 title claims abstract description 53
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 239000013307 optical fiber Substances 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 230000008569 process Effects 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 38
- 239000010408 film Substances 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 230000010365 information processing Effects 0.000 description 1
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- 210000001503 joint Anatomy 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
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- 229920000573 polyethylene Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
Abstract
The invention discloses a multilayer coupling structure for mode field conversion of a photonic chip, wherein the lower layer in the coupling structure is a conical structure, the upper layer is an optical waveguide structure with larger size, light beams transmitted in the conical structure of the lower layer are gradually transferred to the optical waveguide structure of the upper layer for transmission, so that the high-efficiency transmission of the light beams between the photonic chip and an optical fiber is realized, and the multilayer coupling structure has the advantages of low coupling loss and easiness in preparation. The invention also discloses a structure preparation method based on the chemical mechanical polishing method, which has the advantages of low cost, high processing efficiency, simple process, high yield and the like.
Description
Technical Field
The invention relates to the field of preparation of a coupling structure for mode field conversion, in particular to the field of multilayer coupling preparation for mode field conversion of a photonic chip.
Background
The large-scale photonic integrated chip is a key device for realizing future optical quantum technology, high-speed optical communication and optical information processing technology. The cross-sectional dimension of optical waveguides on photonic chips is typically sub-micron, such small dimensions provide the possibility for large-scale integration; but on the other hand, since modern optical transmission networks are built on optical fibers, the cross-sectional dimension of standard optical communication fibers is typically several micrometers. When light waves are transmitted between the optical fiber and the photonic chip optical waveguide, the coupling efficiency is extremely low due to the difference of the cross section sizes of the optical fiber and the photonic chip optical waveguide, the coupling loss is extremely high, and the efficiency and the performance of optical signal processing and transmission are obviously reduced. To solve this problem, grating structures and tapered structures are commonly used to achieve on-chip mode-field conversion and matching, thereby achieving high coupling efficiency. The former uses a grating structure and has the advantages of compact arrangement, convenient test of any point on the chip and easy alignment; but have the disadvantages of low coupling efficiency, narrow bandwidth, and sensitivity to optical wavelengths. The latter prepares the end of the waveguide on the photonic chip to be converted into a tapered or thinned structure. The photonic chip waveguide has the advantages of high coupling efficiency, low wavelength sensitivity and the like, but due to the fact that the photonic chip waveguide has small structure size and extremely high requirement on structure processing precision, a preparation means with a line width far smaller than the characteristic size of the photonic chip waveguide is often needed, for example, the photonic chip waveguide is processed by methods such as deep/extreme ultraviolet lithography and electron/ion beam direct writing, so that the process cost is greatly increased and the preparation efficiency is reduced.
Disclosure of Invention
The existing grating or conical coupling structure cannot simultaneously take the advantages of high coupling efficiency and easiness in preparation into consideration, and the structure prepared by the coupling structure preparation method provided by the invention has the advantages of high coupling efficiency, low mode field conversion loss and low wavelength sensitivity, and has the advantages of convenience in preparation and low cost due to the fact that the structure is prepared by a chemical mechanical polishing method.
The purpose of the invention is realized by adopting the following technical scheme:
a method for preparing a coupling structure for mode-field conversion, the coupling structure comprising at least a waveguide structure with a varying cross-sectional dimension, the method comprising at least the step of performing a chemical mechanical polishing process on the uncovered exposed portion of the waveguide layer by selectively covering a mask with a thickness on the surface of the waveguide layer to form the waveguide structure.
The change of the section size is monotonous, and can be monotonous increase or monotonous decrease, as long as the section size of one end of the waveguide structure is smaller than that of the other end on the whole; preferably, the waveguide structure is a tapered waveguide structure, and may also be a parabolic or other monotonically varying quadric shape.
The preparation method also comprises the following steps:
a) forming a waveguide layer on the substrate layer; b) processing the waveguide layer into a tapered waveguide structure by a chemical mechanical polishing treatment mode; c) forming a first dielectric layer on the tapered waveguide structure; d) forming another waveguide structure on the first dielectric layer; e) a second dielectric layer is formed over the other waveguide structure.
It will be appreciated that any combination of the above steps a) -e) may be performed.
The waveguide layer is a manufactured waveguide or a bare chip which is not manufactured into a waveguide; preferably, when the waveguide layer is a bare wafer without waveguide, at least a step of forming the bare wafer into a waveguide with a further narrowed width is further included.
The above method can be used to prepare a coupling structure for mode-field conversion, and further, any combination of a composite waveguide, a multilayer optical coupling structure and/or a photonic chip based on the above coupling structure can be prepared.
The coupling structure at least comprises two layers of waveguide structures from bottom to top, wherein the lower layer of waveguide structure comprises a tapered waveguide structure; preferably, the refractive index of the lower waveguide structure is slightly greater than or equal to the refractive index of the upper waveguide structure. The upper waveguide structure is larger in dimension perpendicular to the light transmission direction than the lower waveguide structure.
The upper waveguide structure can partially or completely cover the lower waveguide structure, or partially or completely surround the lower waveguide; the covering or surrounding mode can be direct, that is, no other dielectric layer or other functional layer is included between the upper layer waveguide and the lower layer waveguide; the above covering or enclosing may also be indirect, i.e. another dielectric layer or another functional layer may be further disposed between the upper and lower waveguides.
The cross-sectional dimension of the tapered structure changes gradually in the width and/or thickness direction; preferably, the variation process may be a linear variation or a non-linear variation with position. The end with the larger cross-sectional dimension of the lower waveguide structure is coupled with the photonic chip, and the end with the smaller cross-sectional dimension of the upper waveguide structure, which is positioned on the lower waveguide structure, is coupled with the optical fiber.
Fig. 1 to 3 mainly show a preferred example of the coupling structure prepared by the method of the present invention, and it is understood that the coupling structure prepared by the method of the present invention is not limited to the shape shown in the drawings.
As shown in fig. 1, the coupling structure at least includes two waveguide layers from bottom to top. The lower waveguide structure 4 is gradually narrowed along the light transmission direction to form a conical structure; as shown in fig. 2 and 3, the lower waveguide structure 4 has a cross-sectional dimension smaller in fig. 3 than in fig. 2. More preferably, the narrowing is a simultaneous narrowing of the width and the thickness. As shown in fig. 1 and 2, the lower waveguide structure 4 and the photonic chip optical waveguide structure are located on the same substrate material (the photonic chip optical waveguide structure is not shown in the figure), and the port sizes of the two are the same, and the two are directly coupled through the photonic chip coupling port 2.
The upper waveguide structure 5 is another larger-sized optical waveguide structure disposed above the tapered structure layer, and is coupled to the optical fiber through the optical fiber coupling port 3. Specifically, as shown in fig. 3, 6 is a fiber splicing region in the upper waveguide structure, through which the optical fiber is directly spliced (the fiber-related structure is not shown in the figure). Although the cross-sectional dimensions of the upper waveguide structure 5 in fig. 3 are the same as those in fig. 2 as shown in fig. 1-3, those skilled in the art may not be limited to this implementation, for example, the cross-sectional dimensions of the upper waveguide structure 5 in fig. 3 are larger or smaller than those in fig. 2, as long as the cross-sectional dimensions of the upper waveguide structure 5 in fig. 2 and 3 are larger than those of the lower waveguide structure 4.
The light beam transmitted in the light waveguide of the lower waveguide structure is gradually transferred to the light waveguide of the upper waveguide structure for transmission due to the tapered structure, and finally, the light beam transmission and coupling between the photonic chip and the optical fiber are realized, as shown in fig. 2 and 3, the mode field conversion of the transmitted light beam is realized in the transmission process between the lower waveguide structure 4 in fig. 2 and the optical fiber butt-joint region 6 in fig. 3.
Preferably, the upper waveguide structure 5 partially directly overlies the lower waveguide structure 4 as shown in fig. 1 and 2. But the person skilled in the art may not be limited to this implementation, for example, the upper waveguide structure 5 encloses the lower waveguide structure 4 completely directly inside. Preferably, a first dielectric layer may be disposed between the lower waveguide structure 4 and the upper waveguide structure 5 to increase the connection strength of the two layers and adjust the refractive index. Preferably, a second dielectric layer may be further or solely disposed above the upper waveguide structure 5, so as to further perform refractive index adjustment and control, and in addition, a certain protection function may be provided for the multilayer coupling structure.
As shown in fig. 4 and 5, the processing method for preparing the multilayer coupling structure for mode field conversion of the photonic chip can be used for converting the prepared waveguide structure into the multilayer coupling structure at any position and can also be used for directly preparing the multilayer coupling structure on a bare wafer without preparing the waveguide structure. The implementation steps for the two cases are described below:
1. preparing multilayer coupling structure at any position of the prepared waveguide structure
As shown in fig. 4, fig. 4(a), 4(c), and 4(e) are cross-sectional views (side views) of the relevant structures in the manufacturing process, and fig. 4(b), 4(d), and 4(f) are top views of the relevant structures in the manufacturing process. The preparation process is as follows:
1) as shown in fig. 4(a) and 4(b), a sample to be processed of a waveguide structure 8 formed on a substrate 1 is arbitrarily selected;
2) as shown in fig. 4(c) and 4(d), the surface of the finished waveguide structure 8 is selectively covered with a cover 7 having a certain thickness, and the upper surface is subjected to a chemical mechanical polishing process to remove the exposed portion of the finished waveguide structure 8; because the cover has a certain thickness, the waveguide structure close to the cover has low removal efficiency, and the waveguide structure far away from the cover has high removal efficiency, so that the lower layer waveguide structure 4 with the tapered waveguide structure is formed, wherein the smaller the waveguide section size is, the farther the lower layer waveguide structure is away from the cover;
3) plating a thin film on the lower waveguide structure 4 to form a first dielectric layer (not shown in the specific steps); the film layer can increase the connection strength between the waveguide structures and adjust the refractive index distribution of the waveguide structures; it is understood that this step may be omitted;
4) as shown in fig. 4(e) and 4(f), the upper waveguide structure 5 is prepared on the lower waveguide structure 4 or on the first dielectric layer. Preferably, the upper waveguide structure 5 is a common straight waveguide structure; the material can be prepared by various mature processes such as a semiconductor etching method, a femtosecond laser direct writing processing method, a chemical mechanical polishing method and the like;
5) optionally, a thin film is plated on the upper waveguide structure 5 to form a second dielectric layer (the specific steps are not shown); the film layer can further adjust the refractive index distribution of the waveguide structure, and optionally, the film layer can also provide a certain protection function.
2. Fabrication of multilayer coupling structures on bare wafers without waveguide structures
As shown in fig. 5, fig. 5(a), 5(c), 5(e), and 5(g) are cross-sectional views (side views) of the relevant structures in the manufacturing process, and fig. 5(b), 5(d), 5(f), and 5(h) are top views of the relevant structures in the manufacturing process. The preparation process is as follows:
1) as shown in fig. 5(a) and 5(b), a sample to be processed is selected, in which a waveguide structure is not formed yet, and a bare wafer 9 is covered on a substrate 1;
2) as shown in fig. 5(c) and 5(d), the surface of the bare wafer 9 without waveguide structure is selectively covered with a cover 7 having a certain thickness, and the upper surface is subjected to a chemical mechanical polishing process to remove the exposed portion of the bare wafer 9 without waveguide structure; because the covering has a certain thickness, the removal efficiency of the bare wafer 9 close to the covering part is lower, and the removal efficiency of the bare wafer 9 far away from the covering part is higher, so that a bare wafer wedge-shaped structure 10 with smaller cross section size of the bare wafer is formed farther away from the covering;
3) as shown in fig. 5(e) and 5(f), on the bare wafer wedge-shaped structure 10, a tapered waveguide structure with gradually reduced thickness and width is obtained by further preparing a waveguide structure with reduced width through various mature processes such as a semiconductor etching method, a femtosecond laser direct writing processing method, a chemical mechanical polishing method, and the like, and finally, a lower waveguide structure 4 with a tapered waveguide structure is formed, wherein the smaller the waveguide cross-sectional size is, the farther from the cover.
4) Plating a thin film on the lower waveguide structure 4 to form a first dielectric layer (not shown in the specific steps); the film layer can increase the connection strength between the waveguide structures and adjust the refractive index distribution of the waveguide structures; it is understood that this step may be omitted.
5) As shown in fig. 5(g) and 5(h), the upper waveguide structure 5 is prepared on the lower waveguide structure 4 or on the first dielectric layer. Preferably, the upper waveguide structure 5 is a common straight waveguide structure; the nano-crystalline silicon material can be prepared by various mature processes such as a semiconductor etching method, a femtosecond laser direct writing processing method, a chemical mechanical polishing method and the like.
6) Optionally, a thin film is plated on the upper waveguide structure 5 to form a second dielectric layer (the specific steps are not shown); the film layer can further adjust the refractive index distribution of the waveguide structure, and optionally, the film layer can also provide a certain protection function.
The invention adopts the chemical mechanical polishing method to prepare the tapered waveguide structure, and has more advantages that:
1) only standard chemical mechanical polishing equipment is needed, and compared with a high-resolution photoetching and electron beam direct writing scheme, the cost is low.
2) The chemical mechanical polishing technology is naturally compatible with wafers of various sizes, and compared with high-resolution photoetching and electron beam direct writing schemes, the chemical mechanical polishing technology has the advantages of large processing size and high processing efficiency.
3) The prepared multilayer coupling structure with the tapered waveguide does not need to be accurately aligned, and compared with the existing tapered coupling structure, the multilayer coupling structure with the tapered waveguide is simple in process and high in yield.
4) Compared with a dry/wet etching technology, the chemical polishing technology is naturally easy to realize a smooth surface with low roughness, and can avoid the additional reduction of transmission loss caused by high roughness of the waveguide surface and the side wall.
Drawings
FIG. 1 is an overall three-dimensional schematic view of a coupling structure of the present invention;
FIG. 2 is a cross-sectional view of a port for optical waveguide coupling to a photonic chip in a coupling structure according to the present invention;
FIG. 3 is a schematic cross-sectional view of a port coupled to an optical fiber in a coupling configuration of the present invention;
FIG. 4 is a flow chart of the fabrication of a coupling structure on a fabricated waveguide structure;
fig. 5 is a flow chart of the fabrication of a coupling structure on a bare wafer without the fabrication of a waveguide structure.
The figures show that: 1-substrate, 2-photonic chip coupling port, 3-optical fiber coupling port, 4-lower layer waveguide structure, 5-upper layer waveguide structure, 6-optical fiber butt joint region, 7-cover, 8-manufactured waveguide structure, 9-bare wafer without waveguide structure, and 10-bare wafer wedge structure.
Detailed Description
For a better understanding of the present invention, the following detailed description is given in conjunction with examples and drawings, but the present invention is not limited thereto.
Taking a lithium niobate thin film on insulator (LNOI) photonic chip as an example, the on-chip waveguide has a width of 1 μm and a thickness of 500 nm. A100 μm thick polyethylene film was used as a cover, exposing only the 300 μm long end of the waveguide. Gold velvet polishing cloth and silicon dioxide ball polishing solution with the granularity of 20nm are used as polishing solution. Polishing at a rotating speed of 50r/min for 4min to obtain the tapered waveguide structure with the length of 300 μm and the tail end thickness and width close to 0. The polishing time is related to the dimensions of the cone structure as shown in the table below.
| Polishing time | Length of conical structure | Width of end section | End section thickness |
| 0min | 300μm | 1μm | 500nm |
| 2min | 300μm | 0.5μm | 250nm |
| 4min | 300μm | 0 | 0 |
| 6min | 200μm | 0 | 0 |
And plating a silicon dioxide film with the thickness of 100nm on the conical waveguide structure. A silicon oxynitride film was plated to a thickness of 3 μm. Plating a chromium film with the thickness of 200 nm. And removing part of the chromium film area by using a femtosecond laser direct writing processing technology to leave a chromium film with the length of 300 mu m and the width of 3 mu m, wherein the chromium film area is positioned right above the conical waveguide structure. And removing the silicon oxynitride film which is not covered by the chromium film by a reactive ion beam etching technology, wherein the left silicon oxynitride film is the upper-layer waveguide structure. And removing the chromium film. A silicon dioxide film having a thickness of 1.5 μm was plated.
The finally obtained structure is used for mode field conversion of the lithium niobate waveguide and the receiving waveguide/optical fiber, and conversion efficiency superior to 99% can be realized.
Claims (10)
1. A method of fabricating a coupling structure for mode-field conversion, the coupling structure comprising at least a waveguide structure with a varying cross-sectional dimension, the method comprising at least the step of performing a chemical mechanical polishing process on an uncovered exposed portion of the waveguide layer by selectively covering a surface of the waveguide layer with a mask having a thickness to form the waveguide structure.
2. A method according to claim 1, wherein the change in cross-sectional dimension is a monotonic change, preferably the waveguiding structure is tapered.
3. A method according to claim 2, wherein the preparation method comprises the step of forming a waveguide layer on the substrate layer, and/or forming a further waveguide structure on the tapered waveguide structure, and/or forming a first dielectric layer between the tapered waveguide structure and the further waveguide structure, and/or further comprising the step of forming a second dielectric layer on top of the further waveguide structure.
4. A method according to any one of claims 1 to 3, wherein the waveguide layer is a fabricated waveguide or a bare wafer without a fabricated waveguide; preferably, the waveguide layer is a bare wafer without waveguide, and at least the step of forming the bare wafer into a waveguide with a further narrowed width is included.
5. Any combination of a composite waveguide, a multilayer optical coupling structure and/or a photonic chip prepared according to the method of any one of claims 1 to 4.
6. The combination of any one of the composite waveguide, the multilayer optical coupling structure, and/or the photonic chip of claim 5, comprising at least two layers of waveguide structures from bottom to top, wherein the lower layer of waveguide structures comprises a tapered waveguide structure; preferably, the refractive index of the lower waveguide structure is slightly greater than or equal to the refractive index of the upper waveguide structure.
7. The combination of any of the composite waveguide, the multilayer light coupling structure, and/or the photonic chip of claim 6, wherein the upper waveguide structure has a larger dimension perpendicular to the direction of light transmission than the lower waveguide structure.
8. Any combination of the composite waveguide, multilayer optical coupling structure, and/or photonic chip of claim 6 or 7, wherein the upper waveguide structure at least partially, directly or indirectly, covers or surrounds the lower waveguide structure.
9. Any combination of the composite waveguide, multilayer optical coupling structure, and/or photonic chip of any of claims 6-8, wherein the cross-sectional dimension of the tapered structure varies in a gradual change in width and/or thickness direction; preferably, the variation process may be a linear variation or a non-linear variation with position.
10. The combination of any one of claims 6-8, wherein the lower waveguide structure is coupled to the photonic chip at an end of the lower waveguide structure having a larger cross-sectional dimension, and the upper waveguide structure is coupled to the optical fiber at an end of the lower waveguide structure having a smaller cross-sectional dimension.
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