CN111736367B - Graphene-based phase modulator, modulation method and preparation method - Google Patents

Graphene-based phase modulator, modulation method and preparation method Download PDF

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CN111736367B
CN111736367B CN202010484876.3A CN202010484876A CN111736367B CN 111736367 B CN111736367 B CN 111736367B CN 202010484876 A CN202010484876 A CN 202010484876A CN 111736367 B CN111736367 B CN 111736367B
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graphene
layer
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applied voltage
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CN111736367A (en
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王树龙
张倩
胡泽宇
蔡鸣
杜林�
张海峰
陈燕宁
周芝梅
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Xidian University
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Abstract

The invention discloses a graphene-based phase modulator, a modulation method and a preparation method, wherein the phase modulator comprises the following steps: the structure comprises a substrate layer, a sandwich structure and a metal layer which are arranged on a substrate from bottom to top, wherein the sandwich structure sequentially comprises a lower constraint layer, a graphene layer and an upper constraint layer from bottom to top; and a metal film is arranged on part of the surface of the graphene layer and used as a grounding end of an applied voltage. The substrate layer is a silicon dioxide layer; the upper constraint layer and the lower constraint layer are respectively silicon layers. The metal layer is an aluminum layer. According to the invention, the electro-optical adjustable characteristic of graphene is utilized, the phase is adjusted when the wavelength of incident light is 1550nm, and the size of the phase modulator is smaller, so that the purpose of small size and high integration of the photoelectric device is realized.

Description

Graphene-based phase modulator, modulation method and preparation method
Technical Field
The invention relates to the technical field of nano optical devices, in particular to a graphene-based phase modulator, a modulation method and a preparation method.
Background
With decades of rapid growth, current integrated circuits face limitations that reach moore's law physical limits. The integrated photoelectric interconnection chip combines the photoelectronic technology with the microelectronic technology, and provides thought for the development trend of chips with high integration level, high speed and wide bandwidth in the future. The electro-optic phase modulator is one of important components of an integrated electro-optic chip, and the conventional modulator currently faces problems such as narrow modulation bandwidth, difficulty in further integration and the like. Therefore, how to achieve higher performance, lower power consumption and faster speed has become a trend in the field of electro-optic phase modulation.
The superior photon and electron properties of graphene make graphene a focus of attention, and the excellent electro-optical tunable property of graphene has great research and application value for a novel photoelectric phase modulator. Compared to conventional modulators, graphene-based electro-optical modulators have several advantages: 1. wide bandwidth operation; 2. high-speed operation; 3. is compatible with CMOS (complementary metal oxide semiconductor) technology.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a graphene-based phase modulator, a modulation method and a preparation method, which utilize the electro-optical adjustable characteristic of graphene to realize the adjustment of the phase when the wavelength of incident light is 1550nm, and the phase modulator has smaller size, thereby being beneficial to realizing the targets of small size and high integration of photoelectric devices.
In order to achieve the above purpose, the present invention is realized by the following technical scheme.
A graphene-based phase modulator comprising: the structure comprises a substrate layer, a sandwich structure and a metal layer which are arranged on a substrate from bottom to top, wherein the sandwich structure sequentially comprises a lower constraint layer, a graphene layer and an upper constraint layer from bottom to top; and a metal film is arranged on part of the surface of the graphene layer and used as a grounding end of an applied voltage.
Further, the substrate layer is a silicon dioxide layer; the upper constraint layer and the lower constraint layer are respectively silicon layers.
Further, the metal layer is an aluminum layer.
Further, the phase modulator is of a cube structure; the dimensions of the substrate layer, the sandwich structure and the metal layer are as follows: the length is 1-18 μm, and the width is 200-500nm.
Further, the thickness of the substrate layer is 50-150nm, the thickness of the lower constraint layer is 5-40nm, the thickness of the graphene layer is 0.7nm, the thickness of the upper constraint layer is 5-40nm, and the thickness of the metal layer is 5-40nm.
Still further, the thickness of the substrate base plate is 100nm, the thickness of the lower constraint layer is 30nm, the thickness of the graphene layer is 0.7nm, the thickness of the upper constraint layer is 20nm, and the thickness of the metal layer is 15nm.
Further, the lower confinement layer has a grating coupler on one opposite side.
(II) a modulation method of a graphene-based phase modulator, comprising the following steps:
step 1, setting the wavelength of incident light, and determining a first external voltage, a second external voltage and a third external voltage by utilizing the corresponding relation between the external voltage and the graphene photoconduction;
and 2, sequentially and respectively adding a first external voltage, a second external voltage and a third external voltage between the graphene layer and the metal layer, and changing the light conductivity of the graphene layer, thereby realizing the phase modulation of incident light.
Further, the determining the first applied voltage, the second applied voltage and the third applied voltage by using the correspondence between the applied voltage and the graphene photoconduction specifically includes:
firstly, obtaining a corresponding relation between an applied voltage and graphene photoconduction:
σ＝Re(σ)+Im(σ)＝(σ′ intra +σ′ inter )+(iσ″ intra ++iσ″ inter )
where μ is the fermi level of the graphene, d is the thickness of the upper confinement layer, v F Is the fermi rate of the graphene,is an approximated Planck constant, n 0 Is the carrier concentration in graphene, V 0 Is the intrinsic voltage of the graphene, e is the electron charge quantity, V is the applied voltage and epsilon 0 、ε r The relative dielectric constants of the vacuum dielectric constant and the upper confinement layer, respectively; sigma (sigma) inter Is the inter-band light guide, σ' inter Is the real part of the inter-band light guide, σ inter Is the imaginary part of the inter-band light guide; sigma (sigma) intra Is the in-band light guiding rate, sigma' intra Is the real part of the in-band light guide, σ intra An imaginary part of the in-band light guide; ω is the incident light angular frequency; sigma (sigma) 0 ＝πe 2 2h, which is intrinsic photoconductive, h is the Planck constant; τ 1 Is the in-band relaxation time τ 2 Is the inter-band relaxation time;
secondly, selecting a voltage range (m, n) corresponding to the imaginary part of the graphene light conductivity larger than zero as a candidate voltage interval, namely sigma intra +σ″ inter A value range of V corresponding to more than 0;
finally, taking the starting point m of the candidate voltage interval as a first applied voltage, setting the voltage increment as k, and setting the second applied voltage as m+k and the third applied voltage as m+2k;
wherein k is more than 0.1 and less than 0.3.
(III) a preparation method of the graphene-based phase modulator, which comprises the following steps:
step 1, depositing a substrate layer on a substrate by using a normal pressure chemical vapor deposition method;
step 2, depositing a lower constraint layer on the substrate layer by using a chemical vapor deposition method; respectively manufacturing two grating couplers on one opposite side surface of the lower constraint layer by using a deep reactive ion etching method;
step 3, catalytically growing graphene by using a chemical vapor deposition method, and transferring the graphene to the surface of the lower constraint layer by wet transfer to form a graphene layer;
step 4, depositing a metal film on part of the surface of the graphene layer by magnetron sputtering to form a grounding end of an applied voltage;
step 5, depositing an upper constraint layer on the surface of the graphene layer containing the metal film by using a chemical vapor deposition method;
and 6, depositing a metal layer on the surface of the upper constraint layer by adopting magnetron sputtering to obtain the graphene-based phase modulator.
Further, in the step 1, the reaction conditions of the atmospheric pressure chemical vapor deposition method are as follows: the air pressure is 1 atmosphere, the temperature is 300-500 ℃, and the reaction gas is gaseous silane and oxygen.
Further, in the step 2 and the step 5, the reaction conditions of the chemical vapor deposition method are as follows: the air pressure is 40Pa, the temperature is 600-660 ℃, and the reaction gas is gaseous silane.
Further, in the step 2, the reaction conditions of the deep reactive ion etching method are as follows: the reaction gas is SF 6 The gas pressure is 20-25Pa, the radio frequency power is 250-350W, and the gas flow is 30-50sccm.
Further, in step 3, the method for catalytically growing graphene by chemical vapor deposition specifically includes:
copper foil is selected as a substrate; placing copper foil in an annealing furnace, and performing Ar/H 2 The flow rate ratio was 800 mL/min -1 /100mL·min -1 Heating to 1000 ℃ for annealing for 20min; then methane gas is introduced, and graphene is deposited for 15min; in Ar/H 2 And cooling to room temperature under the atmosphere to form the graphene layer.
Further, in step 3, the graphene is transferred to the surface of the lower constraint layer by wet transfer, and the specific process is as follows:
covering a PMMA plate on the surface of graphene, baking a copper sheet, graphene and PMMA plate, and soaking in 45% FeCl 3 Obtaining graphene and PMMA in the solution; and cleaning, drying and cooling the graphene and PMMA plate, and then soaking in an organic solvent to dissolve the PMMA plate, so as to obtain a single graphene layer.
Further, in step 4, the experimental conditions of the magnetron sputtering are as follows: high-purity aluminum is used as a sputtering target, argon is used as sputtering gas, the temperature of the substrate is 100 ℃, the pressure of the argon is 2Pa, the flow rate of the argon is 170sccm, the sputtering power is 48W, and the sputtering time is 30min.
Further, in step 6, the experimental conditions of the magnetron sputtering are as follows: high-purity aluminum is used as a sputtering target, argon is used as sputtering gas, the substrate temperature is 130 ℃, the argon pressure is 0.4Pa, the argon flow is 170sccm, the direct-current sputtering power is 2600W, and the sputtering time is 30min.
Compared with the prior art, the invention has the beneficial effects that:
(1) According to the invention, the electro-optical adjustable characteristic of graphene is utilized, the phase control is realized when the wavelength of incident light is 1550nm, the wavelength of the incident light is in a near infrared band, and most of modulators based on graphene work in a middle infrared or deep infrared band, so that the electro-optical adjustable phase control device has great significance in realizing the phase control on near infrared band photoelectric devices.
(2) The invention realizes final phase modulation by controlling the applied voltage, so that the phase modulation can be realized within a large angle range of 360 degrees.
(3) The phase modulator of the invention has smaller size, and is beneficial to realizing the aim of small size and high integration of photoelectric devices.
Drawings
The invention will now be described in further detail with reference to the drawings and to specific examples.
Fig. 1 is a schematic structural diagram of a graphene-based phase modulator according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an implementation process of a graphene-based phase modulator according to an embodiment of the present invention;
FIG. 3 is a graph showing a correspondence between an applied voltage and a graphene light guide rate according to an embodiment of the present invention;
fig. 4 is a graph of modulation effects of a graphene-based phase modulator according to an embodiment of the present invention, (a) corresponding to a first applied voltage, (b) corresponding to a second applied voltage, and (c) corresponding to a third applied voltage;
fig. 5 is a schematic flow diagram of a preparation method of a graphene-based phase modulator according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the structure of the product obtained in the various preparation steps of FIG. 2, wherein (a) corresponds to step 2, (b) corresponds to step 3, (c) corresponds to step 5, and (d) corresponds to step 6;
in the above figures, 1 a substrate layer; 2 lower constraint layer; 3 a graphene layer; 4, a constraint layer is arranged on the upper part; and 5 a metal layer.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, but it will be understood by those skilled in the art that the following examples are only for illustrating the present invention and should not be construed as limiting the scope of the present invention.
Example 1
Referring to fig. 1, the graphene-based phase modulator provided by the present invention includes: the structure comprises a substrate layer 1, a sandwich structure and a metal layer 5 which are arranged on a substrate from bottom to top, wherein the sandwich structure sequentially comprises a lower constraint layer 2, a graphene layer 3 and an upper constraint layer 4 from bottom to top; and a part of the surface of the graphene layer 3 is provided with a metal film which is used as a grounding end of an applied voltage.
Specifically, the substrate layer 1 is a silicon dioxide layer; the upper constraint layer 4 and the lower constraint layer 2 are respectively silicon layers; the metal layer 5 is an aluminum layer.
The whole phase modulator is of a cube structure; the dimensions of the substrate layer 1, the sandwich structure and the metal layer 5 are: the length is 1-18 μm, and the width is 200-500nm.
When the width of the phase modulator is too small, the relative modulation effect of the phase modulator is poor; when the length of the phase modulator is too large, the phase modulator is too bulky, which is disadvantageous for integration of the phase modulator into a circuit. The width of the phase modulator can achieve better modulation effect when the width is 200nm-500 nm.
The dimensions of the phase modulator in this embodiment are 3 μm in length, 300nm in width and 200nm in height.
Further, the thickness of the substrate layer 1 is 50-150nm, the thickness of the lower constraint layer 2 is 5-40nm, the thickness of the graphene layer 3 is 0.7nm, the thickness of the upper constraint layer 4 is 5-40nm, and the thickness of the metal layer 5 is 5-40nm.
In the embodiment of the invention, the thickness of the substrate is 100nm, the thickness of the lower constraint layer 2 is 30nm, the thickness of the graphene layer 3 is 0.7nm, the thickness of the upper constraint layer 4 is 20nm, and the thickness of the metal layer 5 is 15nm. The lower confinement layer 2 has grating couplers on one opposite side.
According to the invention, the light guide rate of the graphene layer 3 is regulated according to the applied voltage applied to the joint of the graphene layer 3 and the metal layer 5 of the phase modulator, and output modulation is carried out through the phase relation between the light guide rate and the phase modulator, namely, final modulation is realized by controlling the applied voltage, so that the phase conversion can be realized within 360 degrees.
Example 2
The invention also provides a modulation method of the graphene-based phase modulator, which comprises the following steps:
step 1, setting the wavelength of incident light, and determining a first external voltage, a second external voltage and a third external voltage by utilizing the corresponding relation between the external voltage and the graphene photoconduction;
referring to fig. 2, the wavelength of incident light is 1550nm, and the wavelength of incident light is in near infrared band.
The specific process for determining the applied voltage is as follows:
firstly, obtaining a corresponding relation between an applied voltage and graphene photoconduction:
σ＝Re(σ)+Im(σ)＝(σ′ intra +σ′ inter )+(iσ″ intra ++iσ″ inter )
where μ is the fermi level of the graphene, d is the thickness of the upper confinement layer, v F Is the fermi rate of the graphene,is an approximated Planck constant, n 0 Is the carrier concentration in graphene, V 0 Is the intrinsic voltage of the graphene, e is the electron charge quantity, V is the applied voltage and epsilon 0 、ε r The relative dielectric constants of the vacuum dielectric constant and the upper confinement layer, respectively; sigma (sigma) inter Is the inter-band light guide, σ' inter Is the real part of the inter-band light guide, σ inter Is the imaginary part of the inter-band light guide; sigma (sigma) intra Is the in-band light guiding rate, sigma' intra Is the real part of the in-band light guide, σ intra An imaginary part of the in-band light guide; ω is the incident light angular frequency; sigma (sigma) 0 ＝πe 2 2h, which is intrinsic photoconductive, h is the Planck constant; τ 1 Is the in-band relaxation time τ 2 Is the inter-band relaxation time;
secondly, selecting a voltage range (m, n) corresponding to the imaginary part of the graphene light conductivity larger than zero as a candidate voltage interval, namely sigma intra +σ″ inter A value range of V corresponding to more than 0;
finally, taking the starting point m of the candidate voltage interval as a first applied voltage, setting the voltage increment as k, and setting the second applied voltage as m+k and the third applied voltage as m+2k;
wherein k is more than 0.1 and less than 0.3.
Specifically, in this embodiment, the first applied voltage is 2.15V, the second applied voltage is 2.3V, and the third applied voltage is 2.5V.
The specific process is as follows:
1. the relationship curve between the applied voltage and the graphene photoconduction is obtained by MATLAB software, and referring to FIG. 3, re (sigma) is a real part, and Im (sigma) is an imaginary part. And selecting a voltage range corresponding to the virtual part of the graphene light guide rate larger than zero according to the relation between the applied voltage and the graphene photoconduction. Because the photoconductivity of graphene is complex, the condition for satisfying the transverse magnetic mode surface plasmon is that the imaginary part of the light conductivity is greater than zero.
2. And setting graphene photoconduction in COMSOL software, observing modulation effects of the phase modulator under different voltages, and sequentially selecting three-point voltage values. The voltage is greater than 2.15V and then is in an effective regulation range, so that the first externally applied voltage point is selected to be 2.15V; the second externally applied voltage point and the third externally applied voltage point are respectively 2.3V and 2.5V based on the fact that the modulation voltage is not suitable to be large so as to avoid excessive power consumption, and adjacent intervals are kept consistent so as to be convenient to adjust.
And 2, sequentially and respectively adding a first external voltage, a second external voltage and a third external voltage between the graphene layer and the metal layer, and changing the light conductivity of the graphene layer, thereby realizing the phase modulation of incident light.
In this example, 2.15V is first chargedPressing between graphene layer and metal layer to connect positive voltage electrode to metal layer, and connecting grounding end to metalized part (metal film) of graphene layer to obtain a first light guide rate of 0.94+i 2.70X10 -29 。
Adding a second point voltage of 2.3V between the graphene layer and the metal layer to obtain a second light transmittance of 0.51+i 5.20×10 -29 The method comprises the steps of carrying out a first treatment on the surface of the Adding a third point voltage of 2.5V between the graphene layer and the metal layer to obtain a third light transmittance of 0.26+i 1.03X10 -28 。
Obtaining a first phase variable of 221 degrees by utilizing the relation between the first light conductivity and the phase of the phase modulator; obtaining a second phase variable of 182.1 degrees by using the relation between the second light conductivity and the phase of the phase modulator; the relationship between the third light guiding rate and the phase modulator phase is used to obtain a third phase variable of 120.8 degrees.
By alternately outputting the first phase variable, the second phase variable and the third phase variable, the modulation of the voltage to the phase signal is realized, the modulation result is shown in fig. 4, the modulation voltage corresponding to (a) in fig. 4 is 2.15V, the phase is changed from 90 degrees to-131 degrees, and the phase is changed to 221 degrees; (b) The corresponding modulation voltage 2.3V is now phase-shifted from 90 ° to-92.1 °, phase-shifted to 182.1 °; (c) The corresponding modulation voltage was 2.5V, at which time the phase was changed from 90 ° to-30.8 ° and the phase was changed to 120.8 °. The invention realizes final phase modulation by controlling the applied voltage, so that the phase modulation can be realized in a large angle range.
Example 3
Referring to fig. 5, the invention further provides a preparation method of the graphene-based phase modulator, which comprises the following steps:
step 1, depositing a substrate layer on a substrate by using a normal pressure chemical vapor deposition method;
processing a monocrystalline silicon wafer by using an Atmospheric Pressure Chemical Vapor Deposition (APCVD) method to obtain a buried oxide layer, wherein vapor deposition is carried out at 1 atmosphere and the temperature is 400 ℃; specifically, gaseous silane SiH is treated by 4 With oxygen O 2 Introducing into a reaction chamber, performing chemical reaction on the surface of the silicon wafer, and depositing to generate solid SiO 2 Film, anotherThere is the formation of gaseous water. The APCVD technology has high deposition rate and simple operation. The thickness of the buried oxide layer is 2 mu m. The structure of the product in this step is shown in FIG. 6 (a).
Step 2, depositing a lower constraint layer on the substrate layer by using a chemical vapor deposition method; respectively manufacturing two grating couplers on one opposite side surface of the lower constraint layer by using a deep reactive ion etching method;
the Low Pressure CVD (LPCVD) thermal decomposition process is performed by using gaseous silane SiH 4 Introducing into a reaction chamber, gradually thermally decomposing to generate Si, depositing on the surface of substrate, and reacting to obtain SiH 2 ，H 2 And (3) separating from the surface and escaping from the reaction chamber. The reaction process is carried out under the pressure of about 40Pa, the temperature is controlled to be 600-660 ℃, the lower constraint silicon layer is used for constraining the electric field distribution inside the device, and Si and SiO are mixed 2 Better contact performance.
Step 3, catalytically growing graphene by using a chemical vapor deposition method, and transferring the graphene to the surface of the lower constraint layer by wet transfer to form a graphene layer;
specifically, before forming the graphene layer on the lower constraint layer, grating couplers are respectively manufactured at two ends of the lower constraint layer, and the specific operation is as follows: two grating couplers are respectively manufactured at two ends of the lower constraint layer by utilizing a deep reactive ion etching method, and etching gas is SF 6 . The reactive ion etching is an etching method which uses etching gas under a certain pressure to generate molecular free radicals by gas glow discharge under the action of a high-frequency electric field, and performs ion bombardment and chemical reaction on an etched object to generate volatile gas to form etching. Specifically operating when the reaction chamber is introduced with SF 6 During the process, chemical reaction occurs in glow discharge, and the generated molecular free radicals reach the Si surface and react with silicon to achieve the etching purpose. The gas pressure is 20-25Pa, the radio frequency power is 250-350W, and the gas flow is 30-50sccm.
The period of the grating coupler was set to 780nm. The grating coupler functions to match the phase of the incident light with the modulator, thereby enabling the incident light to enter and exit the modulation structure.
The growth process of the graphene comprises the following steps: graphene is grown by copper-catalyzed CVD and transferred onto a target substrate by wet transfer. Under normal pressure, a copper foil with a substrate thickness of 25 μm and a purity of 99.7% is selected, and the copper foil is first treated with Ar/H 2 The flow rate ratio was 800 mL/min -1 /100mL·min -1 Is heated to 1000 ℃ for 20 minutes and then is introduced with CH 4 Depositing graphene for 15min, and finally carrying out Ar/H (atomic layer deposition/atomic layer deposition) 2 And cooling to room temperature in the atmosphere to realize the catalytic growth of graphene on metallic copper.
Wet transfer: PMMA (polymethyl methacrylate ) is covered on the surface of the graphene layer, and after the copper metal, the graphene and the PMMA are baked for 10 minutes at the temperature of 110 ℃, the copper metal, the graphene and the PMMA are soaked in 45 percent FeCl 3 After the metal copper is removed after the cleaning in the solution, the graphene and PMMA are transferred into deionized water by using a PET (polyethylene terephthalate) substrate for cleaning. After the cleaning is finished, the graphene and PMMA are fished out by the product obtained in the step 2; and finally, placing the transferred graphene and PMMA substrate in a dryer for drying. And after natural cooling, soaking the graphene and PMMA substrate in an acetone solution or in a mixed solution of acetone and isopropanol, and removing PMMA to form single-layer graphene.
In this embodiment, the thickness of PMMA is 200nm, and PMMA is used for protecting graphene. The structure of the product in this step is shown in FIG. 6 (b).
Step 4, depositing a metal film on part of the surface of the graphene layer by magnetron sputtering to form a grounding end of an applied voltage;
after a section of the graphene layer is metallized, the section is used as a grounding end for externally applying bias voltage. Specifically, the metallization is to plate a metal film on any section of the graphene layer, so that metal connection is facilitated. The specific operation is to adopt a Physical Vapor Deposition (PVD) magnetron sputtering method, the experimental condition is that a sputtering target adopts high-purity Al, high-purity Ar is used as sputtering gas to be introduced into a sputtering cavity, the substrate temperature is 100 ℃, the Ar gas pressure is 2Pa, the Ar gas flow is fixed at 170sccm, the sputtering power is 48W, and the sputtering time is 30min. And placing the graphene-based sheet into a vacuum chamber, filling working gas argon, and turning on a sputtering power supply to deposit a metal film.
Step 5, depositing an upper constraint layer on the surface of the graphene layer containing the metal film by using a chemical vapor deposition method;
specifically, the Low Pressure CVD (LPCVD) thermal decomposition process is utilized, and the operation steps are: by SiH of gaseous silane 4 Introducing into a reaction chamber, gradually thermally decomposing to generate Si, depositing on the surface of substrate, and reacting to obtain SiH 2 、H 2 And separating from the surface, selecting the reaction chamber, and forming an upper constraint silicon layer. The reaction process is carried out under the pressure of 40Pa, and the temperature is controlled between 600 and 660 ℃. The upper confinement silicon layer is used to confine the electric field distribution inside the device. The structure of the product in this step is shown in FIG. 6 (c).
And 6, depositing a metal layer on the surface of the upper constraint layer by adopting magnetron sputtering to obtain the graphene-based phase modulator.
Specifically, a Physical Vapor Deposition (PVD) method is used to deposit and generate a metal layer on the surface of the upper constraint layer. The specific operation is that the substrate formed in the step 5 is placed into a vacuum chamber through direct current magnetron sputtering, argon is filled into the vacuum chamber, and finally a sputtering power supply is turned on to deposit a metal film. The experimental condition is that the sputtering target adopts high-purity Al, high-purity Ar is used as sputtering gas to be introduced into a sputtering cavity, the substrate temperature is 130 ℃, the Ar gas pressure is 0.4Pa, the Ar gas flow is fixed at 170sccm, the DC sputtering power is 2600W, and the sputtering time is 30min. The structure of the product in this step is shown in FIG. 6 (d).
The preparation method of the phase modulator is simple, and the accurate preparation of the size of the phase modulator can be realized.
While the invention has been described in detail in this specification with reference to the general description and the specific embodiments thereof, it will be apparent to one skilled in the art that modifications and improvements can be made thereto. Accordingly, such modifications or improvements may be made without departing from the spirit of the invention and are intended to be within the scope of the invention as claimed.

Claims (1)

1. The modulation method of the graphene-based phase modulator is characterized by comprising the following steps of:
step 1, setting the wavelength of incident light, and determining a first external voltage, a second external voltage and a third external voltage by utilizing the corresponding relation between the external voltage and the graphene photoconduction;
step 2, sequentially and respectively adding a first external voltage, a second external voltage and a third external voltage between the graphene layer and the metal layer, and changing the light conductivity of the graphene layer so as to realize the phase modulation of incident light;
the corresponding relation between the applied voltage and the graphene photoconduction is utilized to determine a first applied voltage, a second applied voltage and a third applied voltage, and the method specifically comprises the following steps:
firstly, obtaining a corresponding relation between an applied voltage and graphene photoconduction:
σ＝Re(σ)+Im(σ)＝(σ′ intra +σ′ inter )+(iσ″ intra ++iσ″ inter )
where μ is the fermi level of the graphene, d is the thickness of the upper confinement layer, v F Is the fermi rate of the graphene,is an approximated Planck constant, n 0 Is a carrier in grapheneConcentration, V 0 Is the intrinsic voltage of the graphene, e is the electron charge quantity, V is the applied voltage and epsilon 0 、ε r The relative dielectric constants of the vacuum dielectric constant and the upper confinement layer, respectively; sigma (sigma) inter Is the inter-band light guide, σ' inter Is the real part of the inter-band light guide, σ inter Is the imaginary part of the inter-band light guide; sigma (sigma) intra Is the in-band light guiding rate, sigma' intra Is the real part of the in-band light guide, σ intra An imaginary part of the in-band light guide; ω is the incident light angular frequency; sigma (sigma) 0 ＝πe 2 2h, which is intrinsic photoconductive, h is the Planck constant; τ 1 Is the in-band relaxation time τ 2 Is the inter-band relaxation time;
secondly, selecting a voltage range (m, n) corresponding to the imaginary part of the graphene light conductivity larger than zero as a candidate voltage interval, namely sigma intra +σ″ inter A value range of V corresponding to more than 0;
finally, taking the starting point m of the candidate voltage interval as a first applied voltage, setting the voltage increment as k, and setting the second applied voltage as m+k and the third applied voltage as m+2k;
wherein k is 0.1< 0.3.
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