CN111736367A - Phase modulator based on graphene, modulation method and preparation method - Google Patents

Phase modulator based on graphene, modulation method and preparation method Download PDF

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CN111736367A
CN111736367A CN202010484876.3A CN202010484876A CN111736367A CN 111736367 A CN111736367 A CN 111736367A CN 202010484876 A CN202010484876 A CN 202010484876A CN 111736367 A CN111736367 A CN 111736367A
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graphene
layer
phase modulator
substrate
voltage
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CN111736367B (en
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王树龙
张倩
胡泽宇
蔡鸣
杜林�
张海峰
陈燕宁
周芝梅
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Xidian University
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Abstract

The invention discloses a phase modulator based on graphene, a modulation method and a preparation method, wherein the phase modulator comprises the following components: the graphene substrate comprises a substrate layer, an interlayer structure and a metal layer, wherein the substrate layer, the interlayer structure and the metal layer are arranged on a substrate from bottom to top, and the interlayer structure sequentially comprises a lower constraint layer, a graphene layer and an upper constraint layer from bottom to top; and part of the surface of the graphene layer is provided with a metal film which is used as a grounding terminal of an external voltage. The substrate layer is a silicon dioxide layer; the upper and lower confinement layers are silicon layers, respectively. The metal layer is an aluminum layer. The phase modulator utilizes the electro-optic tunable characteristic of graphene to realize phase adjustment when the wavelength of incident light is 1550nm, and the phase modulator is small in size, so that the small-size and high-integration targets of photoelectric devices are realized.

Description

Phase modulator based on graphene, modulation method and preparation method
Technical Field
The invention relates to the technical field of nano optical devices, in particular to a phase modulator based on graphene, a modulation method and a preparation method.
Background
Over decades of rapid development, current integrated circuits face the limitation of reaching the physical limits of moore's law. The integrated photoelectric interconnection chip combines a photoelectronic technology and a microelectronic process, and provides a thought for the development trend of chips with high integration level, high speed and wide bandwidth in the future. The optoelectronic phase modulator is one of the important components of an integrated optoelectronic chip, and the conventional modulator faces problems such as narrow modulation bandwidth, difficulty in further integration and the like. Therefore, how to achieve higher performance, lower power consumption and faster speed becomes a development trend in the field of electro-optical phase modulation.
Due to the excellent photon and electronic properties of graphene, the graphene becomes the focus of attention of people, and the excellent electro-optic tunable characteristic of graphene has great research and application values for a novel electro-optic phase modulator. Compared with the traditional modulator, the graphene-based photoelectric modulator has the following advantages: 1. wide bandwidth operation; 2. high-speed operation; 3. compatible with CMOS (complementary metal oxide semiconductor) technology.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a phase modulator based on graphene, a modulation method and a preparation method, which utilize the electro-optic tunable characteristic of graphene to realize the phase modulation when the wavelength of incident light is 1550nm, and the phase modulator has smaller size, thereby being beneficial to realizing the small-size and high-integration targets of photoelectric devices.
In order to achieve the purpose, the invention is realized by adopting the following technical scheme.
A graphene-based phase modulator, comprising: the graphene substrate comprises a substrate layer, an interlayer structure and a metal layer, wherein the substrate layer, the interlayer structure and the metal layer are arranged on a substrate from bottom to top, and the interlayer structure sequentially comprises a lower constraint layer, a graphene layer and an upper constraint layer from bottom to top; and part of the surface of the graphene layer is provided with a metal film which is used as a grounding terminal of an external voltage.
Further, the substrate layer is a silicon dioxide layer; the upper and lower confinement layers are silicon layers, respectively.
Further, the metal layer is an aluminum layer.
Further, the phase modulator is of a cubic structure; the sizes of the substrate layer, the sandwich structure and the metal layer are as follows: the length is 1-18 μm and the width is 200-500 nm.
Furthermore, the thickness of the substrate layer is 50-150nm, the thickness of the lower constraint layer is 5-40nm, the thickness of the graphene layer is 0.7nm, the thickness of the upper constraint layer is 5-40nm, and the thickness of the metal layer is 5-40 nm.
Furthermore, the substrate base layer is 100nm thick, the lower constraint layer is 30nm thick, the graphene layer is 0.7nm thick, the upper constraint layer is 20nm thick, and the metal layer is 15nm thick.
Further, the lower confinement layer has a grating coupler on one opposing side.
(II) the modulation method of the phase modulator based on the graphene comprises the following steps:
step 1, setting incident light wavelength, and determining a first external voltage, a second external voltage and a third external voltage by utilizing the corresponding relation between the external voltage and the graphene photoconduction;
and 2, sequentially and respectively applying a first external voltage, a second external voltage and a third external voltage between the graphene layer and the metal layer to change the optical transmissivity of the graphene layer, so that the phase modulation of incident light is realized.
Further, the determining the first applied voltage, the second applied voltage and the third applied voltage by using the corresponding relationship between the applied voltage and the graphene photoconduction specifically includes:
firstly, acquiring a corresponding relation between an applied voltage and graphene photoconduction:
Figure BDA0002518696490000031
σ＝Re(σ)+Im(σ)＝(σ′intra+σ′inter)+(iσ″intra++iσ″inter)
Figure BDA0002518696490000032
Figure BDA0002518696490000033
Figure BDA0002518696490000034
where μ is the Fermi level of the graphene, d is the thickness of the upper confinement layer, vFIs the fermi velocity of the graphene,
Figure BDA0002518696490000035
is a reduced Planck constant, n0Is the carrier concentration in graphene, V0Is the intrinsic voltage of graphene, e is the electron charge amount, V is the applied voltage,0、rthe vacuum dielectric constant and the relative dielectric constant of the upper confinement layer, respectively; sigmainterIs a value of inter-band light guide ratio of σ'interIs the real part of the optical guide ratio between the bands, σinterIs a belt chamberAn imaginary part of the optical guiding rate; sigmaintraIs an in-band optical transmissivity of σ'intraIs the real part of the in-band optical transmissivity, σintraAn imaginary part of the in-band optical guiding ratio; ω is the incident light angular frequency; sigma0＝πe22h, intrinsic photoconduction, h is Planck constant; tau is1Is the in-band relaxation time, τ2Is the interband relaxation time;
secondly, selecting a voltage range (m, n) corresponding to the imaginary part of the graphene photoconductivity being larger than zero as a candidate voltage interval, namely sigma ″)intra+σ″interThe value range of V corresponding to more than 0;
finally, taking the starting point m of the candidate voltage interval as a first external voltage, setting the voltage increment as k, then setting a second external voltage as m + k, and setting a third external voltage as m +2 k;
wherein k is more than 0.1 and less than 0.3.
(III) the preparation method of the phase modulator based on the graphene comprises the following steps:
step 1, depositing a substrate layer on a substrate by using a normal pressure chemical vapor deposition method;
step 2, depositing a lower constraint layer on the substrate layer by using a chemical vapor deposition method; respectively manufacturing two grating couplers on one opposite side surface of the lower constraint layer by using a deep reactive ion etching method;
step 3, catalytically growing graphene by using a chemical vapor deposition method, and transferring the graphene to the surface of the lower constraint layer by wet transfer to form a graphene layer;
step 4, depositing a metal film on part of the surface of the graphene layer by adopting magnetron sputtering to form a grounding end of an external voltage;
step 5, depositing an upper constraint layer on the surface of the graphene layer containing the metal film by using a chemical vapor deposition method;
and 6, depositing a metal layer on the surface of the upper constraint layer by adopting magnetron sputtering to obtain the phase modulator based on the graphene.
Further, in step 1, the reaction conditions of the atmospheric pressure chemical vapor deposition method are as follows: the pressure is 1 atmosphere, the temperature is 300-500 ℃, and the reaction gas is gaseous silane and oxygen.
Further, in step 2 and step 5, the reaction conditions of the chemical vapor deposition method are as follows: the pressure is 40Pa, the temperature is 600-660 ℃, and the reaction gas is gaseous silane.
Further, in step 2, the reaction conditions of the deep reactive ion etching method are as follows: the reaction gas is SF6The gas pressure is 20-25Pa, the RF power is 250-350W, and the gas flow is 30-50 sccm.
Further, in step 3, the graphene is catalytically grown by using a chemical vapor deposition method, and the specific process is as follows:
selecting copper foil as a substrate; placing the copper foil in an annealing furnace in Ar/H2The flow ratio is 800 mL/min-1/100mL·min-1Heating to 1000 ℃ in the atmosphere of (1) and annealing for 20 min; then introducing methane gas, and depositing graphene for 15 min; at Ar/H2And cooling to room temperature under the atmosphere to form the graphene layer.
Further, in step 3, the graphene is transferred to the surface of the lower constraint layer by wet transfer, and the specific process is as follows:
covering a PMMA plate on the surface of graphene, baking a copper sheet, the graphene and the PMMA plate, and soaking the copper sheet, the graphene and the PMMA plate in 45% of FeCl3Obtaining graphene and PMMA in the solution; and cleaning, drying and cooling the graphene and PMMA plate, and then soaking the graphene and PMMA plate in an organic solvent to dissolve the PMMA plate to obtain the single-layer graphene layer.
Further, in step 4, the experimental conditions of the magnetron sputtering are as follows: high-purity aluminum is used as a sputtering target, argon is used as sputtering gas, the substrate temperature is 100 ℃, the argon pressure is 2Pa, the argon flow is 170sccm, the sputtering power is 48W, and the sputtering time is 30 min.
Further, in step 6, the experimental conditions of the magnetron sputtering are as follows: high-purity aluminum is used as a sputtering target, argon is used as sputtering gas, the substrate temperature is 130 ℃, the argon pressure is 0.4Pa, the argon flow is 170sccm, the direct-current sputtering power is 2600W, and the sputtering time is 30 min.
Compared with the prior art, the invention has the beneficial effects that:
(1) the phase control method utilizes the electro-optic tunable characteristic of the graphene to realize the phase control when the wavelength of incident light is 1550nm, the wavelength of the incident light is in a near infrared band, and most of modulators based on the graphene work in a middle infrared band or a deep infrared band, so the phase control method has great significance for realizing the phase control of near infrared band photoelectric devices.
(2) The invention realizes final phase modulation by controlling the external voltage, so that the phase can be converted in a large angle range within 360 degrees.
(3) The phase modulator is small in size, and is beneficial to achieving the aims of small size and high integration of a photoelectric device.
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The invention is described in further detail below with reference to the figures and specific embodiments.
Fig. 1 is a schematic structural diagram of a phase modulator based on graphene according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an implementation process of a phase modulator based on graphene according to an embodiment of the present invention;
fig. 3 is a graph illustrating a relationship between an applied voltage and a graphene photoconductivity according to an embodiment of the present invention;
fig. 4 is a diagram of modulation effects of the phase modulator based on graphene according to the embodiment of the present invention, (a) corresponds to a first applied voltage, (b) corresponds to a second applied voltage, and (c) corresponds to a third applied voltage;
fig. 5 is a schematic flow chart of a method for manufacturing a phase modulator based on graphene according to an embodiment of the present invention;
FIG. 6 is a schematic diagram showing the structure of the product obtained in each of the preparation steps of FIG. 2, wherein (a) corresponds to step 2, (b) corresponds to step 3, (c) corresponds to step 5, and (d) corresponds to step 6;
in the above figures, 1 a substrate layer; 2 lower constraint layer; 3 a graphene layer; 4, a constraint layer; 5 a metal layer.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, but it will be understood by those skilled in the art that the following examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention.
Example 1
Referring to fig. 1, the present invention provides a graphene-based phase modulator, including: the graphene substrate comprises a substrate layer 1, an interlayer structure and a metal layer 5, wherein the substrate layer 1, the interlayer structure and the metal layer 5 are arranged on a substrate from bottom to top, and the interlayer structure sequentially comprises a lower constraint layer 2, a graphene layer 3 and an upper constraint layer 4 from bottom to top; and part of the surface of the graphene layer 3 is provided with a metal film which is used as a grounding terminal of an external voltage.
Specifically, the substrate layer 1 is a silicon dioxide layer; the upper constraint layer 4 and the lower constraint layer 2 are silicon layers respectively; the metal layer 5 is an aluminum layer.
The whole phase modulator is of a cubic structure; the sizes of the substrate layer 1, the sandwich structure and the metal layer 5 are as follows: the length is 1-18 μm and the width is 200-500 nm.
When the width of the phase modulator is too small, the phase modulator has a poor effect on relative modulation; when the length of the phase modulator is too large, the volume of the phase modulator is too large, which is not favorable for integrating the phase modulator into a circuit. The width of the phase modulator can achieve a good modulation effect when the width is 200nm-500 nm.
The dimensions of the phase modulator in this embodiment are 3 μm in length, 300nm in width and 200nm in height.
Further, the thickness of the substrate layer 1 is 50-150nm, the thickness of the lower constraint layer 2 is 5-40nm, the thickness of the graphene layer 3 is 0.7nm, the thickness of the upper constraint layer 4 is 5-40nm, and the thickness of the metal layer 5 is 5-40 nm.
In the embodiment of the invention, the thickness of the substrate base layer is 100nm, the thickness of the lower constraint layer 2 is 30nm, the thickness of the graphene layer 3 is 0.7nm, the thickness of the upper constraint layer 4 is 20nm, and the thickness of the metal layer 5 is 15 nm. The lower confinement layer 2 has grating couplers on one of its opposite sides.
According to the invention, an external voltage is applied to the joint of the graphene layer 3 and the metal layer 5 of the phase modulator, the optical guide rate of the graphene layer 3 is adjusted, and output modulation is carried out through the phase relation between the optical guide rate and the phase modulator, namely final modulation is realized by controlling the external voltage, so that phase transformation can be realized within 360 degrees.
Example 2
The invention also provides a modulation method of the phase modulator based on the graphene, which comprises the following steps:
step 1, setting incident light wavelength, and determining a first external voltage, a second external voltage and a third external voltage by utilizing the corresponding relation between the external voltage and the graphene photoconduction;
referring to fig. 2, the wavelength of the incident light is 1550nm, and the wavelength of the incident light is in the near infrared band.
The specific process of determining the applied voltage comprises the following steps:
firstly, acquiring a corresponding relation between an applied voltage and graphene photoconduction:
Figure BDA0002518696490000081
σ＝Re(σ)+Im(σ)＝(σ′intra+σ′inter)+(iσ″intra++iσ″inter)
Figure BDA0002518696490000082
Figure BDA0002518696490000083
Figure BDA0002518696490000084
where μ is the Fermi level of the graphene, d is the thickness of the upper confinement layer, vFIs the fermi velocity of the graphene,
Figure BDA0002518696490000085
is a reduced Planck constant, n0As carriers in grapheneConcentration, V0Is the intrinsic voltage of graphene, e is the electron charge amount, V is the applied voltage,0、rthe vacuum dielectric constant and the relative dielectric constant of the upper confinement layer, respectively; sigmainterIs a value of inter-band light guide ratio of σ'interIs the real part of the optical guide ratio between the bands, σinterIs the imaginary part of the interband photoconductivity; sigmaintraIs an in-band optical transmissivity of σ'intraIs the real part of the in-band optical transmissivity, σintraAn imaginary part of the in-band optical guiding ratio; ω is the incident light angular frequency; sigma0＝πe22h, intrinsic photoconduction, h is Planck constant; tau is1Is the in-band relaxation time, τ2Is the interband relaxation time;
secondly, selecting a voltage range (m, n) corresponding to the imaginary part of the graphene photoconductivity being larger than zero as a candidate voltage interval, namely sigma ″)intra+σ″interThe value range of V corresponding to more than 0;
finally, taking the starting point m of the candidate voltage interval as a first external voltage, setting the voltage increment as k, then setting a second external voltage as m + k, and setting a third external voltage as m +2 k;
wherein k is more than 0.1 and less than 0.3.
Specifically, in this embodiment, the first applied voltage is 2.15V, the second applied voltage is 2.3V, and the third applied voltage is 2.5V.
The specific process is as follows:
1. MATLAB software is used for obtaining a relation curve between the applied voltage and the graphene photoconduction, and referring to FIG. 3, Re (sigma) is a real part, and Im (sigma) is an imaginary part. And selecting a voltage range corresponding to the condition that the imaginary part of the graphene photoconductivity is greater than zero according to the relation between the applied voltage and the graphene photoconductivity. Since the photoconductivity of graphene is a complex number, the condition in which a transverse magnetic mode surface plasmon is satisfied is that the imaginary part of its photoconductivity is greater than zero.
2. And setting graphene photoconduction in COMSOL software, observing the modulation effect of the phase modulator under different voltages, and sequentially selecting three-point voltage values. The effective regulating range is obtained after the voltage is more than 2.15V, so that the first external voltage point is selected to be 2.15V; the second and third applied voltage points are 2.3V and 2.5V, respectively, because the modulation voltage should not be too large to avoid excessive power consumption and the adjacent intervals should be kept consistent for adjustment.
And 2, sequentially and respectively applying a first external voltage, a second external voltage and a third external voltage between the graphene layer and the metal layer to change the optical transmissivity of the graphene layer, so that the phase modulation of incident light is realized.
In this embodiment, a voltage of 2.15V is applied between the graphene layer and the metal layer, i.e., the positive electrode of the voltage is connected to the metal layer, and the ground terminal is connected to the metalized portion (on the metal film) of the graphene layer, so as to obtain a first photoconductivity of 0.94+ i × 2.70 × 10-29。
Applying a second voltage of 2.3V between the graphene layer and the metal layer to obtain a second photoconductivity of 0.51+ i 5.20 × 10-29Applying a third voltage of 2.5V between the graphene layer and the metal layer to obtain a third photoconductivity of 0.26+ i 1.03 × 10-28。
Obtaining a first phase transformation amount of 221 degrees by utilizing the relation between the first optical guiding rate and the phase of the phase modulator; obtaining a second phase variable of 182.1 degrees by utilizing the relation between the second optical guiding rate and the phase modulator phase variable; the third phase variation is 120.8 ° using the third optical transmissivity versus phase of the phase modulator.
The modulation of the voltage on the phase signal is realized by outputting the alternating operation of the first phase transformation quantity, the second phase variable and the third phase variable, the modulation result is shown in fig. 4, the corresponding modulation voltage in fig. 4 (a) is 2.15V, the phase is changed from 90 degrees to-131 degrees, and the phase is changed to 221 degrees; (b) the corresponding modulation voltage of 2.3V changes the phase from 90 ° to-92.1 ° and the phase changes to 182.1 °; (c) the corresponding modulation voltage is 2.5V, when the phase changes from 90 ° to-30.8 °, the phase changes to 120.8 °. The invention realizes the final phase modulation by controlling the external voltage, so that the phase conversion can be realized in a large-angle range.
Example 3
Referring to fig. 5, the present invention further provides a method for manufacturing a phase modulator based on graphene, including the following steps:
step 1, depositing a substrate layer on a substrate by using a normal pressure chemical vapor deposition method;
processing a monocrystalline silicon piece by using an atmospheric pressure chemical vapor deposition method (APCVD) to obtain a buried oxide layer, wherein vapor deposition is carried out at 1 atmospheric pressure and the temperature is 400 ℃; is operated by subjecting gaseous silane SiH4With oxygen O2Introducing into a reaction chamber, performing chemical reaction on the surface of the silicon wafer and depositing to generate solid SiO2Film, and in addition, gaseous water is generated. The APCVD technology has high deposition rate and simple and convenient operation. The thickness of the buried oxide layer is 2 mu m. The product structure of this step is shown in fig. 6 (a).
Step 2, depositing a lower constraint layer on the substrate layer by using a chemical vapor deposition method; respectively manufacturing two grating couplers on one opposite side surface of the lower constraint layer by using a deep reactive ion etching method;
using a Low Pressure CVD (LPCVD) thermal decomposition process operating by introducing gaseous SiH silane4Introducing into a reaction chamber, gradually thermally decomposing to generate chemical reaction to generate Si, depositing on the surface of the substrate, and reacting to obtain SiH2，H2And escaping from the reaction chamber. The reaction process is carried out under the pressure of about 40Pa, the temperature range is controlled to be 600-660 ℃, the lower constraint silicon layer is used for constraining the electric field distribution in the device, and the Si and the SiO are2The contact performance of (2) is better.
Step 3, catalytically growing graphene by using a chemical vapor deposition method, and transferring the graphene to the surface of the lower constraint layer by wet transfer to form a graphene layer;
specifically, before the graphene layer is formed on the lower constraint layer, grating couplers are respectively manufactured at two ends of the lower constraint layer, and the method specifically comprises the following steps: respectively manufacturing two grating couplers at two ends of the lower constraint layer by using a deep reactive ion etching method, wherein etching gas is SF6. Reactive ion etching is an etching method which utilizes etching gas under certain pressure to make the gas glow discharge produce molecular free radicals under the action of high-frequency electric field, and makes the etched object undergo the processes of ion bombardment and chemical reaction to produce volatile gas to form etching. The specific operation is that when the reaction chamber is filled with SF6In time, chemistry takes place in glow dischargeAnd reacting, wherein the generated molecular free radicals reach the surface of the Si and react with the silicon to achieve the aim of etching. The gas pressure is between 20 and 25Pa, the radio frequency power is between 250 and 350W, and the gas flow is between 30 and 50 sccm.
The period of the grating coupler was set to 780 nm. The effect of the grating coupler is to achieve phase matching of the incident light with the modulator, thereby enabling the incident light to enter and exit the modulation structure.
The growth process of the graphene is as follows: graphene is grown by copper-catalyzed CVD and transferred to a target substrate by wet transfer. The specific operation is that under the normal pressure, copper foil with the substrate thickness of 25 mu m and the purity of 99.7 percent is selected, and the copper foil is firstly put in Ar/H2The flow ratio is 800 mL/min-1/100mL·min-1Is heated to 1000 ℃ for annealing for 20 minutes in the atmosphere of (1), and then CH is introduced4Depositing graphene for 15min, and finally performing Ar/H2And cooling to room temperature under the atmosphere to realize the graphene catalytic growth on the metallic copper.
And (3) wet transfer: covering PMMA (polymethyl methacrylate) on the surface of a graphene layer, baking the metal copper, graphene and PMMA at the temperature of 110 ℃ for 10 minutes, and soaking the metal copper, graphene and PMMA in 45% FeCl3After cleaning in the solution, the metal copper is removed, and the graphene + PMMA is transferred to deionized water by using a PET (poly terephthalic acid) substrate for cleaning. After cleaning, fishing out the graphene and PMMA by using the product obtained in the step 2; and finally, placing the transferred graphene + PMMA substrate in a dryer for drying. And after natural cooling, soaking the graphene and PMMA substrate in an acetone solution or a mixed solution of acetone and isopropanol, and removing PMMA to form single-layer graphene.
The thickness of PMMA in this example is 200nm, and PMMA is used to protect graphene. The product structure of this step is shown in fig. 6 (b).
Step 4, depositing a metal film on part of the surface of the graphene layer by adopting magnetron sputtering to form a grounding end of an external voltage;
and after one section of the graphene layer is metalized, the section is used as a grounding terminal of an external bias voltage. Specifically, metallization is to plate a metal film on any section of the graphene layer to facilitate metal connection. The specific operation is to adopt a Physical Vapor Deposition (PVD) magnetron sputtering method, the experimental conditions are that a sputtering target adopts high-purity Al, high-purity Ar is used as sputtering gas and is introduced into a sputtering cavity, the substrate temperature is 100 ℃, the Ar gas pressure is 2Pa, the Ar gas flow is fixed at 170sccm, the sputtering power is 48W, and the sputtering time is 30 min. And putting the graphene substrate into a vacuum chamber, filling working gas argon, and turning on a sputtering power supply to deposit a metal film.
Step 5, depositing an upper constraint layer on the surface of the graphene layer containing the metal film by using a chemical vapor deposition method;
specifically, a Low Pressure CVD (LPCVD) thermal decomposition process is utilized, and the operation steps are as follows: SiH of gaseous silane4Introducing into a reaction chamber, gradually thermally decomposing to generate chemical reaction to generate Si, depositing on the surface of the substrate, and reacting to obtain SiH2、H2And separating the reaction chamber from the surface to form an upper constraint silicon layer. The reaction process is carried out under the pressure of 40Pa, and the temperature range is controlled to be 600-660 ℃. The upper confinement silicon layer serves to confine the electric field distribution inside the device. The product structure of this step is shown in fig. 6 (c).
And 6, depositing a metal layer on the surface of the upper constraint layer by adopting magnetron sputtering to obtain the phase modulator based on the graphene.
Specifically, a metal layer is deposited on the upper confinement layer surface by Physical Vapor Deposition (PVD). The specific operation is that the substrate formed in the step 5 is firstly placed into a vacuum chamber through direct current magnetron sputtering, working gas argon is filled, and finally a sputtering power supply is turned on to deposit the metal film. The experimental conditions are that the sputtering target adopts high-purity Al, high-purity Ar is used as sputtering gas and is introduced into a sputtering cavity, the substrate temperature is 130 ℃, the Ar gas pressure is 0.4Pa, the Ar gas flow is fixed at 170sccm, the direct-current sputtering power is 2600W, and the sputtering time is 30 min. The product structure of this step is shown in fig. 6 (d).
The phase modulator is simple in preparation method and can realize accurate preparation of the size of the phase modulator.
Although the present invention has been described in detail in this specification with reference to specific embodiments and illustrative embodiments, it will be apparent to those skilled in the art that modifications and improvements can be made thereto based on the present invention. Accordingly, such modifications and improvements are intended to be within the scope of the invention as claimed.

Claims (10)

1. A graphene-based phase modulator, comprising: the graphene substrate comprises a substrate layer, an interlayer structure and a metal layer, wherein the substrate layer, the interlayer structure and the metal layer are arranged on a substrate from bottom to top, and the interlayer structure sequentially comprises a lower constraint layer, a graphene layer and an upper constraint layer from bottom to top; and part of the surface of the graphene layer is provided with a metal film which is used as a grounding terminal of an external voltage.
2. The graphene-based phase modulator of claim 1, wherein the substrate layer is a silicon dioxide layer; the upper constraint layer and the lower constraint layer are respectively silicon layers; the metal layer is an aluminum layer.
3. The graphene-based phase modulator according to claim 1, wherein the phase modulator is a cubic structure; the sizes of the substrate layer, the sandwich structure and the metal layer are as follows: the length is 1-18 μm and the width is 200-500 nm.
4. The graphene-based phase modulator of claim 1, wherein the substrate layer is 50-150nm thick, the lower confinement layer is 5-40nm thick, the graphene layer is 0.7nm thick, the upper confinement layer is 5-40nm thick, and the metal layer is 5-40nm thick.
5. The graphene-based phase modulator according to claim 4, wherein the substrate base layer has a thickness of 100nm, the lower confinement layer has a thickness of 30nm, the graphene layer has a thickness of 0.7nm, the upper confinement layer has a thickness of 20nm, and the metal layer has a thickness of 15 nm.
6. The graphene-based phase modulator of claim 1, wherein the lower confinement layer has a grating coupler on one opposing side.
7. The modulation method of the phase modulator based on the graphene is characterized by comprising the following steps:
step 1, setting incident light wavelength, and determining a first external voltage, a second external voltage and a third external voltage by utilizing the corresponding relation between the external voltage and the graphene photoconduction;
and 2, sequentially and respectively applying a first external voltage, a second external voltage and a third external voltage between the graphene layer and the metal layer to change the optical transmissivity of the graphene layer, so that the phase modulation of incident light is realized.
8. The modulation method of the graphene-based phase modulator according to claim 7, wherein the first applied voltage, the second applied voltage and the third applied voltage are determined by using a corresponding relationship between the applied voltage and the graphene photoconduction, and specifically:
firstly, acquiring a corresponding relation between an applied voltage and graphene photoconduction:
Figure FDA0002518696480000021
σ＝Re(σ)+Im(σ)＝(σ′intra+σ′inter)+(iσ″intra++iσ″inter)
Figure FDA0002518696480000022
Figure FDA0002518696480000023
Figure FDA0002518696480000024
where μ is the Fermi level of the graphene, d is the thickness of the upper confinement layer, vFIs the fermi velocity of the graphene,
Figure FDA0002518696480000025
is a reduced Planck constant, n0Is the carrier concentration in graphene, V0Is the intrinsic voltage of graphene, e is the electron charge amount, V is the applied voltage,0、rthe vacuum dielectric constant and the relative dielectric constant of the upper confinement layer, respectively; sigmainterIs a value of inter-band light guide ratio of σ'interIs the real part of the optical guide ratio between the bands, σinterIs the imaginary part of the interband photoconductivity; sigmaintraIs an in-band optical transmissivity of σ'intraIs the real part of the in-band optical transmissivity, σintraAn imaginary part of the in-band optical guiding ratio; ω is the incident light angular frequency; sigma0＝πe22h, intrinsic photoconduction, h is Planck constant; tau is1Is the in-band relaxation time, τ2Is the interband relaxation time;
secondly, selecting a voltage range (m, n) corresponding to the imaginary part of the graphene photoconductivity being larger than zero as a candidate voltage interval, namely sigma ″)intra+σ″interThe value range of V corresponding to more than 0;
finally, taking the starting point m of the candidate voltage interval as a first external voltage, setting the voltage increment as k, then setting a second external voltage as m + k, and setting a third external voltage as m +2 k;
wherein k is more than 0.1 and less than 0.3.
9. The preparation method of the phase modulator based on the graphene is characterized by comprising the following steps:
step 1, depositing a substrate layer on a substrate by using a normal pressure chemical vapor deposition method;
step 2, depositing a lower constraint layer on the substrate layer by using a chemical vapor deposition method; respectively manufacturing two grating couplers on one opposite side surface of the lower constraint layer by using a deep reactive ion etching method;
step 3, catalytically growing graphene by using a chemical vapor deposition method, and transferring the graphene to the surface of the lower constraint layer by wet transfer to form a graphene layer;
step 4, depositing a metal film on part of the surface of the graphene layer by adopting magnetron sputtering to form a grounding end of an external voltage;
step 5, depositing an upper constraint layer on the surface of the graphene layer containing the metal film by using a chemical vapor deposition method;
and 6, depositing a metal layer on the surface of the upper constraint layer by adopting magnetron sputtering to obtain the phase modulator based on the graphene.
10. The method for preparing the phase modulator based on graphene according to claim 9, wherein in step 3, the graphene is catalytically grown by using a chemical vapor deposition method, and the specific process is as follows:
selecting copper foil as a substrate; placing the copper foil in an annealing furnace in Ar/H2The flow ratio is 800/100 mL/min-1Heating to 1000 ℃ in the atmosphere of (1) and annealing for 20 min; then introducing methane gas, and depositing graphene for 15 min; at Ar/H2Cooling to room temperature under the atmosphere to form a graphene layer;
the graphene is transferred to the surface of the lower constraint layer through wet transfer, and the specific process is as follows:
covering a PMMA plate on the surface of graphene, baking a copper sheet, the graphene and the PMMA plate, and soaking the copper sheet, the graphene and the PMMA plate in 45% of FeCl3Obtaining graphene and PMMA in the solution; and cleaning, drying and cooling the graphene and PMMA plate, and then soaking the graphene and PMMA plate in an organic solvent to dissolve the PMMA plate to obtain the single-layer graphene layer.
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