CN110161724A - The modulator approach and preparation method of a kind of electrooptic modulator, electrooptic modulator - Google Patents

The modulator approach and preparation method of a kind of electrooptic modulator, electrooptic modulator Download PDF

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CN110161724A
CN110161724A CN201910267102.2A CN201910267102A CN110161724A CN 110161724 A CN110161724 A CN 110161724A CN 201910267102 A CN201910267102 A CN 201910267102A CN 110161724 A CN110161724 A CN 110161724A
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modulator
length
light propagation
voltage
layer
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CN110161724B (en
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王树龙
蔡鸣
张斯郁
王银娣
韩涛
刘红侠
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Xidian University
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Xidian University
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0327—Operation of the cell; Circuit arrangements

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  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses the modulator approaches and preparation method of a kind of electrooptic modulator, electrooptic modulator, wherein a kind of electrooptic modulator, comprising: substrate layer 1；Sandwich is located on the substrate layer 1, and the sandwich successively includes the first graphene layer 2, silicon layer 3 and the second graphene layer 4 from bottom to top；Covering 5 is located on the sandwich；Nano wire 6 is embedded in the covering 5, and has gap between the nano wire 6 and the sandwich.The present invention obtains light propagation length according in the second graphene layer 4 of the electrooptic modulator and the junction applied voltage of covering 5, output modulation is carried out by the length relation of the light propagation length and the electrooptic modulator, final modulation is realized by controlling the applied voltage, so that its modulation depth is close to 100%.

Description

The modulator approach and preparation method of a kind of electrooptic modulator, electrooptic modulator
Technical field
The invention belongs to nanocomposite optical device arts, and in particular to the tune of a kind of electrooptic modulator, electrooptic modulator Method and preparation method processed.
Background technique
With the development of nanophotonics, the raising of integrated level, that there are physical properties is excellent for photoelectric figure integrated circuit technique Change and technique manufacture problem, the high bit-error as caused by lower modulation depth, high dynamic power consumption, low modulation bandwidth and The problem of high technology tolerance difference.To solve the above problems, various new device structures, material and working mechanism are constantly proposed, For realizing higher performance, lower power consumption and faster speed.
Currently to the research of new device mainly by regulating and controlling to realize voltage to optical signal to graphene conductivity Strong and weak modulation.
But lower modulation depth greatly improves the bit error rate in detection process, transmits to the information in practical application It has adverse effect on.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of electrooptic modulators, Electro-optical Modulation The modulator approach and preparation method of device.The technical problem to be solved in the present invention is achieved through the following technical solutions:
The embodiment of the invention provides a kind of electrooptic modulators, comprising:
Substrate layer；
Sandwich is located on the substrate layer, and the sandwich successively includes the first graphene from bottom to top Layer, silicon layer and the second graphene layer；
Covering is located on the sandwich；
Nano wire is embedded in the covering, and has gap between the nano wire and the sandwich.
In one embodiment of the invention, the electrooptic modulator is cube structure, and the length is 1-18 μm.
In one embodiment of the invention, the gap is 1-5nm.
The embodiment of the invention provides a kind of modulator approaches of electrooptic modulator, comprising:
Choose first voltage, second point voltage；
First voltage, the second point voltage are added on the sandwich respectively and respectively obtain the first light Spread length, the second light propagation length；
Utilize the relation of the first light propagation length, the second light propagation length and the electrooptic modulator length The first optical signal, the second optical signal are not obtained；
Modulation is realized using first optical signal, second optical signal.
In one embodiment of the invention, first voltage, the second point voltage include:
First voltage is the cut-in voltage of the modulator, in the range of 0V~2.15V；
The second point voltage is the closing voltage of the modulator, in the range of 2.2V~5V.
In one embodiment of the invention, first voltage, the second point voltage are added in the folder respectively The first light propagation length is respectively obtained on layer structure sheaf, the second light propagation length includes:
First voltage is added in second graphene layer and to obtain the first light propagation long for the covering junction Degree；
The second point voltage is added in second graphene layer and to obtain the second light propagation long for the covering junction Degree.
In one embodiment of the invention, the first light propagation length, the second light propagation length and institute are utilized The relationship for stating electrooptic modulator length respectively obtains the first optical signal, the second optical signal includes:
Divide after the first light propagation length, the second light propagation length are made comparisons with the electrooptic modulator length First optical signal, second optical signal are not formed.
The embodiment of the invention provides a kind of preparation methods of electrooptic modulator, comprising:
Prepare substrate layer；
The first graphene layer is formed on the substrate layer；
Silicon layer is formed on first graphene layer surface；
The second graphene layer is formed on the silicon layer；
Covering is formed on second graphene layer；
Nano wire is formed in the covering；
Wherein, the substrate layer, first graphene layer, the silicon layer, second graphene layer, the covering and The length of the nano wire is identical.
In one embodiment of the invention, nano wire is formed in the covering includes:
Through-hole structure of the diameter less than the thickness of the covering is etched in the covering using ibl；
Metal is deposited in the through-hole structure using the method for sputtering, the metal structure after deposit is nano wire.
Compared with prior art, beneficial effects of the present invention:
1, present invention basis is obtained in the second graphene layer 4 of the electrooptic modulator and the junction applied voltage of covering 5 To light propagation length, output modulation is carried out by the length relation of the light propagation length and the electrooptic modulator, that is, is passed through It controls the applied voltage and realizes final modulation, so that its modulation depth is close to 100%.
2, the lower voltage official post of two voltages of modulator approach obtains modulator of the present invention with low-down dynamic function Consumption, lesser all-in resistance make it have very high bandwidth.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of electrooptic modulator provided in an embodiment of the present invention；
Fig. 2 is a kind of preparation method flow diagram of electrooptic modulator provided in an embodiment of the present invention；
Fig. 3 a~3e is a kind of preparation process flow schematic diagram of electrooptic modulator provided in an embodiment of the present invention；
Fig. 4 is a kind of realization principle schematic diagram of electrooptic modulator provided in an embodiment of the present invention；
Fig. 5 is that the characteristic of optical transport length in a kind of applied voltage provided in an embodiment of the present invention and electrooptic modulator is bent Line；
Fig. 6 is the optical field distribution figure under applied voltage 1.5V and 2.3V provided in an embodiment of the present invention in electrooptic modulator；
Fig. 7 is a kind of fabrication error schematic diagram of electrooptic modulator provided in an embodiment of the present invention.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to This.
Embodiment one
Referring to Figure 1, Fig. 1 is a kind of structural schematic diagram of electrooptic modulator provided in an embodiment of the present invention, and the present invention mentions A kind of electrooptic modulator supplied, comprising:
Substrate layer 1；
Wherein, the substrate layer 1 is SiO2；
The size of the substrate layer 1 are as follows: 1-18 μm of length, width 300nm-500nm, height 50nm-150nm.
Preferably, the size of the substrate layer 1 are as follows: 3 μm of length, width 400nm, height 100nm.
Sandwich is located on the substrate layer 1, and the sandwich successively includes the first graphene from bottom to top Layer 2, silicon layer 3 and the second graphene layer 4, wherein
The size of first graphene layer 2 are as follows: 1-18 μm of length, width 300nm-500nm, height 0.7nm.
Preferably, the size of first graphene layer 2 are as follows: 3 μm of length, width 400nm, height 0.7nm.
The size of the silicon layer 3 are as follows: 1-18 μm of length, width 300nm-500nm, height 5nm-20nm.
Preferably, the size of the silicon layer 3 are as follows: 3 μm of length, width 400nm, height 10nm.
The size of second graphene layer 4 are as follows: 1-18 μm of length, width 300nm-500nm, height 0.7nm.
Preferably, the size of second graphene layer 4 are as follows: 3 μm of length, width 400nm, height 0.7nm.
Covering 5 is located on the sandwich；
Wherein, the size of the covering 5 are as follows: 1-18 μm of length, width 300nm-500nm.
If the electrooptic modulator height is 300nm-500nm, the height of the covering 5 is 128.6nm- 443.6nm, if when the preferred height 400nm of the electrooptic modulator, the height of the covering 5 is 228.6nm-342.6nm.
Preferably, the size of the covering 5 are as follows: 3 μm of length, width 400nm, height 288.6nm are (when the Electro-optical Modulation When the preferred height 400nm of device).
Nano wire 6 is embedded in the covering 5, and has gap between the nano wire 6 and the sandwich；
Preferably, the nano wire 6 is cylindrical body, wherein the 6 diameter d of nano wire is 100nm.
Preferably, the nano wire 6 is Ag.
Further, the sandwich is graphene-Si-graphene (graphene-silicon-graphene) structure, And the gap of the nano wire 6 and the graphene-Si-graphene structure is g, wherein the gap g is 1-5nm.
Preferably, the gap g is 1nm；
Further, the electrooptic modulator is cube structure, and its size are as follows: 1-18 μm of length, width 300nm- 500nm, height 300nm-500nm.
When the length of the electrooptic modulator is too small, the electrooptic modulator is poor to the decaying of optical signal, causes to adjust Effect processed is poor；When the length of the electrooptic modulator is too big, the volume of the electrooptic modulator is excessive, and being unfavorable for will be described Electrooptic modulator is integrated in circuit.
Further, the length of the modulator can achieve preferable modulation effect at 2-5 μm, in addition, according to tune 6.06 μm~19.74 μm of the corresponding light propagation length range of first voltage range 0V~2.15V of device processed are greater than the modulation Exported when the length of device " 1 ", second point voltage range 2.2V~5V correspond to it is 0.148 μm~0.147 μm of light propagation length range small " 0 " is exported when the length of the modulator, comprehensively considers the modulation effect of modulator and integrating for circuit, it is therefore preferred that Modulator length is 3 μm.
Preferably, the size of the electrooptic modulator are as follows: 3 μm of length, width 400nm, height 400nm.
In conclusion the present invention adds according to outside the second graphene layer 4 of the electrooptic modulator and the junction of covering 5 Voltage obtains light propagation length, carries out output modulation by the length relation of the light propagation length and the electrooptic modulator, Final modulation is realized by controlling the applied voltage, so that its modulation depth is close to 100%.
Embodiment two
Fig. 2 is referred to, Fig. 2 is a kind of preparation method flow diagram of electrooptic modulator provided in an embodiment of the present invention, Specifically, a kind of electrooptic modulator preparation method provided by the invention includes the following steps:
Step 1: preparing substrate layer 1；
Specifically, processing obtains buried layer oxygen on SOI (Silicon-On-Insulator, silicon) in insulating substrate wafer Change layer, the buried layer oxidated layer thickness is 2 μm, etches the buried layer oxide layer to form the lining using plasma etching method Bottom 1.
Preferably, the buried layer oxide layer is SiO2；
Further, the substrate layer 1 is SiO2。
Step 2: forming the first graphene layer 2 on the substrate layer 1；
Before forming the first graphene layer 2 on the substrate layer 1 grating need to be made respectively at the both ends of the substrate layer 1 Coupler specifically makes two gratings at the both ends of the substrate layer 1 using deep reaction ion etching method respectively and couples Device.
The effect of the grating coupler is to realize the phase matched of incident light and the modulator, to make incident optical energy Enough enter and export the modulated structure.
Further, the both ends of the substrate layer 1 refer to width × height both ends of the surface of substrate layer 1.
Preferably, set the operation wavelength of modulator of the present invention as 1550nm, set period of grating coupler as 780nm。
Fig. 3 a is referred to, Fig. 3 a~3e is that a kind of preparation process flow of electrooptic modulator provided in an embodiment of the present invention is shown It is intended to, specifically, first graphene layer 2 is formed by transfer on the substrate layer 1.
Further, graphene is grown on metallic copper by chemical gas-phase deposition method, by PMMA (polymethylacrylic acid Methyl esters, polymethyl methacrylate, also referred to as organic glass) it is covered in the graphene surface, by metallic copper+stone Black alkene+PMMA is toasted after ten minutes at 110 DEG C of temperature, and is immersed in 45% FeCl3It is gone after being cleaned in solution Fall metallic copper, is shifted graphene+PMMA with PET (Polyethylene terephthalate, poly terephthalic acid) substrate It is cleaned into deionized water, after the completion of cleaning, picks up the graphene+PMMA with the substrate layer 1, finally, will transfer Graphene+PMMA substrate afterwards is put in baker drying, and after natural cooling, the graphene+PMMA layers of substrate is soaked in In acetone soln, or be soaked in acetone and isopropyl alcohol mixture, form single-layer graphene after removing PMMA, utilize etc. from The mode of daughter oxidation forms first graphene layer 2 after being modified single-layer graphene.
Thus it completes to form the first graphene layer 2 on the substrate layer 1.
Further, after one section of first graphene layer 2 being metallized, and the ground connection by this section as applied bias End.
Wherein, the metallization is the either segment plating layer of metal film in first graphene layer 2, is connected convenient for metal It connects.
Preferably, the PMMA with a thickness of 200nm, the PMMA is for protecting the graphene.
Step 3: forming silicon layer 3 on 2 surface of the first graphene layer；
Fig. 3 b is referred to, grows silicon layer 3 on 2 surface of the first graphene layer using the method for atomic layer deposition, it is described Silicon layer 3 is used to constrain the field distribution of device inside.
Step 4: forming the second graphene layer 4 on the silicon layer 3；
Fig. 3 c is referred to, specifically, second graphene layer 4 is formed by transfer on the silicon layer 3.
Further, step 4 is identical as the step 2 method, i.e., through chemical gas-phase deposition method on metallic copper Graphene is grown, PMMA is covered in the graphene surface, metallic copper+graphene+PMMA is toasted 10 at 110 DEG C of temperature Minute after, and be immersed in 45% FeCl3Remove metallic copper after being cleaned in solution, with PET (Polyethylene Terephthalate, poly terephthalic acid) graphene+PMMA is transferred in deionized water and cleans by substrate, and cleaning is completed Afterwards ,+PMMA layers of graphene are picked up with the silicon layer 3, is dried finally,+PMMA layers of substrate of graphene after transfer are put in baker It is dry, after natural cooling, the graphene+PMMA layers of substrate is soaked in acetone soln, or be soaked in acetone and isopropyl In mixed alkoxide solution, removal PMMA forms single-layer graphene, is repaired single-layer graphene in the way of plasma oxidation Second graphene layer 4 is formed after whole.
Thus it completes to form the second graphene layer 4 on the silicon layer 3.
Further, after one section of second graphene layer 4 being metallized, and just using this section as applying bias voltage Extremely, this bias voltage, that is, applied voltage.
Wherein, the metallization is the either segment plating layer of metal film in second graphene layer 4, is connected convenient for metal It connects.
Preferably, the PMMA with a thickness of 200nm.
Step 5: forming covering 5 on second graphene layer 4；
Fig. 3 d is referred to, specifically, is generated and is wrapped in 4 surface deposition of the second graphene layer using CVD method Layer 5.
Preferably, the covering 5 is SiO2。
Step 6: forming nano wire 6 in the covering 5；
Fig. 3 e is referred to, specifically, etches diameter in the covering 5 using ibl less than the covering 5 Thickness through-hole structure, then using sputtering method metal is deposited in the through-hole structure, the metal structure after deposit is Nano wire 6.
Further, light high degree can be confined between Si and Ag by the cylindrical structure of the nano wire 6, this Sample can be with the enhanced modulation effect of high degree.
Wherein, the substrate layer 1, first graphene layer 2, the silicon layer 3, second graphene layer 4, the packet Layer 5 is identical with the length of the nano wire 6, i.e., length is 1-18 μm, and the length is the length of the electrooptic modulator；
The substrate layer 1, first graphene layer 2, the silicon layer 3, second graphene layer 4, the covering 5 Of same size, i.e., width is 300nm-500nm, and the width is the width of the electrooptic modulator；
The substrate layer 1, first graphene layer 2, the silicon layer 3, second graphene layer 4, the covering 5 Height summation is 300nm-500nm, and the height summation is the height of the electrooptic modulator.
Embodiment three
A kind of modulator approach of electrooptic modulator provided in an embodiment of the present invention, this method are in the excellent of above-described embodiment one It selects and implements on the basis of the modulator structure of size, the specific steps are as follows:
Fig. 4 is referred to, Fig. 4 is a kind of realization principle schematic diagram of electrooptic modulator provided in an embodiment of the present invention, wherein
Step 1 chooses first voltage, second point voltage；
Specifically, the cut-in voltage that first voltage is the modulator is chosen, in the range of 0V~2.15V, choosing Taking the second point voltage is the closing voltage of the modulator, in the range of 2.2V~5V.
Further, light propagation length corresponding to 0V is 6.06 μm, and light propagation length corresponding to 2.15V is 19.74 μ Light propagation length corresponding to m, 2.2V is 0.148 μm, and light propagation length corresponding to 5V is 0.147 μm.
Further, light propagation length range corresponding to first voltage is 6.06 μm~19.74 μm, described the The corresponding light propagation length range of 2 voltages is 0.148 μm~0.147 μm, wherein the present invention only needs first voltage Corresponding light propagation length is greater than the length of the electrooptic modulator, and the corresponding light propagation length of the second point voltage is less than institute The length for stating electrooptic modulator, by alternately applying first voltage, voltage can be realized to light in the second point voltage The modulation of signal.
The embodiment of the present invention obtains preferably first voltage, second point voltage by following emulation, specific as follows:
Emulation 1 obtains the relationship between applied voltage and graphene refractive index using MATLAB software, according to described additional Graphene refractive index is input in COMSOL software by the relationship between voltage and graphene refractive index, draw applied voltage with The relationship of modulator interior lights conveying length of the present invention, refers to Fig. 5, and Fig. 5 is a kind of outer power-up provided in an embodiment of the present invention The characteristic curve of pressure and optical transport length in electrooptic modulator.
Two applied voltages are chosen in emulation 2 in COMSOL software, in order to make effect preferably and be conducive to apply voltage, It is 19.93 μm that light propagation length is corresponded to when choosing the larger value, i.e. applied voltage 1.5V of conveying length；Choose conveying length compared with It is 0.14 μm that light propagation length is corresponded to when small value, i.e. applied voltage 2.3V.Fig. 6 is referred to, Fig. 6 is provided in an embodiment of the present invention Optical field distribution figure under applied voltage 1.5V and 2.3V in electrooptic modulator.
In COMSOL software applied voltage is arranged in emulation 3, observes electrooptic modulator of the present invention under different applied voltages Fabrication error, refers to Fig. 7, and Fig. 7 is a kind of fabrication error schematic diagram of electrooptic modulator provided in an embodiment of the present invention.
Preferably, setting applied voltage is from 0V~5V, interval: 0.05V, wherein interval may be set to be 0.005V, It is spaced smaller, precision is higher.
As seen from Figure 7, the fabrication error of Ag radius d/2 (R) and clearance distance g can't be to voltage modulator conveying length Change have large effect.By calculating, under applied voltage 1.5V, degree of error caused by the fabrication error of clearance distance g is about It is 2.89%, degree of error caused by the fabrication error of clearance distance g is about 0.58% under applied voltage 2.3V, applied voltage Degree of error caused by the fabrication error of d/2 (R) is about 8.84% under 1.5V, the fabrication error of d/2 (R) under applied voltage 2.3V Caused degree of error is about 5.74%, and therefore, electrooptic modulator of the present invention possesses very outstanding robustness.
It is obtained by above-mentioned 3 emulation, it is preferable that first voltage is 1.5V, the second point voltage is 2.3V.
First voltage, the second point voltage are added on the sandwich respectively and are respectively obtained by step 2 First light propagation length, the second light propagation length；
First voltage, the second point voltage are added on the sandwich respectively and respectively obtain the first light Spread length, the second light propagation length include:
First voltage is added in second graphene layer 4 and 5 junction of the covering obtains the first light propagation Length；
Specifically, 1.5V voltage is added on graphene-Si-graphene and obtains the first light propagation length and is 19.93μm。
The second point voltage is added in second graphene layer 4 and 5 junction of the covering obtains the second light propagation Length；
Specifically, 2.3V voltage is added on graphene-Si-graphene and obtains the second light propagation length and is 0.14μm。
Step 3 utilizes the first light propagation length, the second light propagation length and the electrooptic modulator length Relationship respectively obtains the first optical signal, the second optical signal；
Utilize the relation of the first light propagation length, the second light propagation length and the electrooptic modulator length The first optical signal is not obtained, the second optical signal includes:
Divide after the first light propagation length, the second light propagation length are made comparisons with the electrooptic modulator length First optical signal, second optical signal are not formed.
Specifically, 3 μm of length due to described 19.93 μm of first light propagation length much larger than the modulator, in this hair The output port of bright modulator still can see that optical signal, that is, input the modulator optical signal can be by the modulator inside Output end is reached, shows that the optical signal of its output is " 1 ", i.e., the optical signal of this output is first optical signal.
Specifically, 3 μm of length due to described 0.14 μm of second light propagation length much smaller than the modulator, in the present invention The output port of modulator can not see optical signal, that is, the optical signal for inputting the modulator can not be by reaching inside the modulator Output end shows that the optical signal of its output is " 0 ", i.e., the optical signal of this output is second optical signal.
Step 4 realizes modulation using first optical signal, second optical signal；
Specifically, first optical signal is exported through the above steps and exports second optical signal alternately, It can finally realize modulation of the voltage to optical signal.
The power consumption and three dB bandwidth of modulator of the present invention are calculated based on the above embodiment.
Calculate power consumption: according to the size of the preferred structure, the capacitance that can calculate the modulator is 10.66fF.By It is 0.8V in the voltage difference of first voltage and the second point voltage, the tune can be calculated according to power consumption formula The energy consumption of device processed about 1.71fJ/bit.
Three dB bandwidth: size according to this structure is calculated, the resistance that can calculate the modulator is 177.93 ohm.By It is 10.66fF in the capacitance of the modulator, the 3dB of the modulator can be calculated according to the calculation formula of three dB bandwidth Bandwidth about 83.91GHz.
Compared with prior art, beneficial effects of the present invention:
1, present invention basis is obtained in the second graphene layer 4 of the electrooptic modulator and the junction applied voltage of covering 5 To light propagation length, output modulation is carried out by the length relation of the light propagation length and the electrooptic modulator, that is, is passed through It controls the applied voltage and realizes final modulation, so that its modulation depth is close to 100%.
2, the lower voltage official post of two voltages of modulator approach obtains modulator of the present invention with low-down dynamic function Consumption, lesser all-in resistance make it have very high bandwidth.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention Protection scope.

Claims (9)

1. a kind of electrooptic modulator characterized by comprising
Substrate layer 1；
Sandwich, be located at the substrate layer 1 on, the sandwich from bottom to top successively include the first graphene layer 2, Silicon layer 3 and the second graphene layer 4；
Covering 5 is located on the sandwich；
Nano wire 6 is embedded in the covering 5, and has gap between the nano wire 6 and the sandwich.
2. electrooptic modulator according to claim 1, which is characterized in that the electrooptic modulator is cube structure, and The length is 1-18 μm.
3. electrooptic modulator according to claim 1, which is characterized in that the gap is 1-5nm.
4. a kind of modulator approach of electrooptic modulator characterized by comprising
Choose first voltage, second point voltage；
First voltage, the second point voltage are added on the sandwich respectively and respectively obtain the first light propagation Length, the second light propagation length；
It is obtained respectively using the relationship of the first light propagation length, the second light propagation length and the electrooptic modulator length To the first optical signal, the second optical signal；
Modulation is realized using first optical signal, second optical signal.
5. modulator approach according to claim 4, which is characterized in that first voltage, the second point voltage packet It includes:
First voltage is the cut-in voltage of the modulator, in the range of 0V~2.15V；
The second point voltage is the closing voltage of the modulator, in the range of 2.2V~5V.
6. modulator approach according to claim 4, which is characterized in that by first voltage, the second point voltage It is added on the sandwich respectively and respectively obtains the first light propagation length, the second light propagation length includes:
First voltage is added in second graphene layer 4 and 5 junction of the covering obtains the first light propagation length；
The second point voltage is added in second graphene layer 4 and 5 junction of the covering obtains the second light propagation length.
7. modulator approach according to claim 4, which is characterized in that utilize the first light propagation length, described second The light propagation length and relationship of the electrooptic modulator length respectively obtains the first optical signal, the second optical signal includes:
Shape is distinguished after the first light propagation length, the second light propagation length are made comparisons with the electrooptic modulator length At first optical signal, second optical signal.
8. a kind of preparation method of electrooptic modulator characterized by comprising
Prepare substrate layer 1；
The first graphene layer 2 is formed on the substrate layer 1；
Silicon layer 3 is formed on 2 surface of the first graphene layer；
The second graphene layer 4 is formed on the silicon layer 3；
Covering 5 is formed on second graphene layer 4；
Nano wire 6 is formed in the covering 5；
Wherein, the substrate layer 1, first graphene layer 2, the silicon layer 3, second graphene layer 4, the covering 5 It is identical with the length of the nano wire 6.
9. preparation method according to claim 8, which is characterized in that forming nano wire 6 in the covering 5 includes:
Through-hole structure of the diameter less than the thickness of the covering 5 is etched in the covering 5 using ibl；
Metal is deposited in the through-hole structure using the method for sputtering, the metal structure after deposit is nano wire 6.
CN201910267102.2A 2019-04-03 2019-04-03 Electro-optical modulator, modulation method and preparation method of electro-optical modulator Active CN110161724B (en)

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