CN110444889A - The super surface phase changer of the automatically controlled resonance suitching type of Terahertz - Google Patents
The super surface phase changer of the automatically controlled resonance suitching type of Terahertz Download PDFInfo
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- CN110444889A CN110444889A CN201910568565.2A CN201910568565A CN110444889A CN 110444889 A CN110444889 A CN 110444889A CN 201910568565 A CN201910568565 A CN 201910568565A CN 110444889 A CN110444889 A CN 110444889A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
- H01Q3/36—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
Abstract
The super surface phase changer of the automatically controlled resonance suitching type of Terahertz, is related to Meta Materials and function solenoid devices field.The present invention includes the metal base plate being successively arranged from bottom to top, medium substrate and phase-shift structure layer, the phase-shift structure layer includes the phase-shift unit being arranged in a manner of M × N orthogonal array, each phase-shift unit includes a rectangular aperture resonant ring, the midpoint on side where the opening of resonant ring is located at it, in the opening of resonant ring, two endpoints of resonant ring are respectively connect with a rectangle metal strip, tie point is located at the center of the long side of rectangle metal strip, side of the rectangle metal strip long side perpendicular to the resonant ring where opening；Between two rectangle metal strips of opening, the upper surface of medium substrate is provided with ohm chip.Phase shift range of the present invention is extended to 330 degree, further increases the integrated level of device and the control precision of array.
Description
Technical field
The present invention relates to Meta Materials and function solenoid devices fields.
Technical background
Terahertz (Terahertz, THz) wave is a kind of electromagnet wave spectrum urgently leaved for development, be often referred to frequency between
Electromagnetic wave within the scope of 0.1THz~10THz.The frequency range has many unique between millimeter wave and infrared, light
Electromagnetic property.Thus make it in physics, chemistry, electronic information, imaging, life science, material science, astronomy, atmosphere and ring
The fields such as border monitoring, national security and anti-terrorism, communication and radar have extremely important potential utility value.
Phased array has the advantages such as wave scanning is more flexible, interference free performance is stronger.Phase shifter is as phased array
Key component, performance directly determines the performance of phased array, therefore studies high performance phase shifter to the research high property of low-loss
The terahertz wave band phased array of energy has extremely important realistic meaning.Conventional phase shifter be generally basede on Ferrite Material,
The switch arrays such as positive-intrinsic-negative diode, field effect transistor are realized.Ferrite Material volume is big, at high cost and be not easy to
The problems such as integrated, and the loss of semiconductor switch is big, poor linearity, hinders phase shifter in the application of terahertz wave band.It is artificial micro-
Structure combination phase-change material is a kind of novel sub-wavelength period artificial structure material, the spy with designability and Modulatory character
Point, can be by changing the state characteristic of its phase-change material, to regulate and control its response intensity and spectral range to electromagnetic wave.
Recently as the development of semiconductor material and technology, Controlled Crystal pipe has shown brilliant performance, becomes
The core of current microelectronic industry.Micro structure array referred to macroscopical basic unit resonance structure week with geometry in particular
Phase property aperiodically arranges a kind of artificial electromagnetic periodic array structure constituted, can be by artificially designing resonance list
Member, controls its response characteristic and electromagnetic property to additional electromagnetic field, and artificial micro-structure includes frequency-selective surfaces knot at present
Structure (FSS), artificial Meta Materials (metamaterial) etc..With the development of modern age micrometer-nanometer processing technology, artificial micro-structure is in nothing
Given a pushing effect in the development of source function element, microwave and millimeter wave section, terahertz wave band and optical band all
Develop a variety of correlation function devices.
In view of the drawbacks of the prior art and demand, the present invention is based on HEMT transistor-super surface micro-structure composite array is real
Existing unit phase-modulation, the electron gas characteristic and mode of resonance of compound super surface micro-structure array are controlled using external electrical control means
Phase regulation is carried out to THz wave, is one of the research of current international direction forefront, and realizes advanced scanning technique
Completely new approach.
Summary of the invention
The small controllable phase shift of simple, easy processing that the technical problem to be solved by the invention is to provide a kind of structures, loss
Array.
The present invention solve the technical problem the technical solution adopted is that, the super surface phase shift of the automatically controlled resonance suitching type of Terahertz
Device, which is characterized in that including the metal base plate, medium substrate and phase-shift structure layer being successively arranged from bottom to top,
The phase-shift structure layer includes the phase-shift unit being arranged in a manner of M × N orthogonal array, and each phase-shift unit includes one
A rectangular aperture resonant ring, the midpoint on side where the opening of resonant ring is located at it, in the opening of resonant ring, resonant ring
Two endpoints respectively connect with a rectangle metal strip, tie point is located at the center of the long side of rectangle metal strip, rectangular
Side of the shape metal strip long side perpendicular to the resonant ring where opening；Between two rectangle metal strips of opening, medium base
The upper surface of plate is provided with ohm chip, and the heterogeneous line of doping is provided with above ohm chip, heterogeneous line is adulterated and two rectangular
Shape metal strip is parallel and equidistant, and M, N are all the integer greater than 2；
In phase-shift unit array, the two sides of each column phase-shift unit are all respectively arranged with a cathode along alignment direction and draw
Outlet and an anode lead wire, each column phase-shift unit be all positioned corresponding to the column cathode terminal and anode lead wire it
Between；
In each column, the heterogeneous line of doping of phase-shift unit is connected to the anode lead wire of the column, and split ring resonator is connected to this
The cathode terminal of column；
Each cathode terminal is all connect with same root cathode bus, and cathode bus has an external cathode connecting pin；Respectively
Anode lead wire is independent of one another.
The material for adulterating heterogeneous line is AlGaN, GaN, InGaN, GaN, AlGaAs or GaAs.The material of medium substrate is base
Plate is sapphire, High Resistivity Si, InP, GaAs or silicon carbide.
The beneficial effects of the present invention are:
(1) transistor has the function of fast modulation, thus as core of the invention Dynamically functional materials, it can be achieved that
The phase-shift characterisitc of high speed.
(2) two-dimensional surface artificial micro-structure is used in the present invention, and the phase tune to THz wave is realized by monolayer array
Control, and the structure can simply be realized by microfabrication means, and technical maturity is easy to make.
(3) present invention is worked by automatically controlled, to realize the dynamic broadband regulation of phase.Without additional light
Other more complicated energisation modes such as excitation, Temperature Excitation, so that the device has in terms of miniaturization, functionization are with yield
There is very big advantage.
(4) present invention is by adjusting resonant ring size and HEMT two-dimensional electron gas, come change total etc.
Circuit is imitated, increases equivalent tank length, cellular construction size reduction to about three in unit distance compared to dipole structure
/ mono-, simultaneous phase shifting range is extended to 330 degree, further increases the integrated level of device and the control precision of array.
(5) present invention realizes dipole resonance and LC resonance mould by the quick change of HEMT two-dimensional electron gas
Formula.Since unit is in disconnection or connected state, all have two resonance.Compared to traditional phase delay line structure, the battle array
Column change sensitivity to HEMT two-dimensional electron gas, possess low switch and compare working characteristics.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
Fig. 2 is phase-shift unit structural schematic diagram.
Fig. 3 is the phase-shift curve figure of single meta structure at ON and OFF state.
Fig. 4 is the amplitude characteristic curve graph of single meta structure at ON and OFF state.
Fig. 5 is the insertion loss curve graph of single meta structure under additional different voltages.
Fig. 6 is the phase-shift curve figure of single meta structure under additional different voltages.
Specific embodiment
The present invention combines artificial micro-structure with transistor to form a kind of super surface phase of automatically controlled resonance suitching type of Terahertz
Array to be moved, and arranges to form composite array reflecting surface by two-dimensional surface, the on-off by controlling transistor changes mode of resonance,
Realize the big phase control capability to THz wave.
The present invention provides the artificial micro-structure reflective arrays in special frequency channel to terahertz electromagnetic wave with frequency response
Column, are later combined array structure with transistor using microelectronic processing technology, and control transistor by applied voltage
On-off realizes the big phase controlling energy to THz wave eventually by the mode of resonance of the automatically controlled artificial micro-structure for changing structure
Power.
Referring to Fig. 1,2, the present invention includes: metal base plate, the medium substrate on metal base plate, is located on medium substrate
Phase shift array (phase-shift structure layer), the medium substrate be semiconductor material；In upper surface of base plate in a manner of metal coating
Phase-shift structure layer is set；For each column element antenna, one vertical negative metal feeder line, all negative metals in array are set
Feeder line connects same additional negative electrode；For each phase-shift unit, negative metal feeder line relative extension split ring resonator, opening
Two opposite T-shape minor matters, top (the i.e. rectangle metal of each T-shape minor matters are formed by two rectangle metal strips
Item) it is set on an ohm chip, ohm chip is set on medium substrate, and heterogeneous line is adulterated in setting on each ohm chip；
For each column element antenna be arranged a vertical anode lead wire (positive feeder), be located at unit on the right side of, anode lead wire with
Doping dissimilar materials connection between at the top of all T-shape minor matters of the column, and the additional anode of each column positive feeder, can be single-row only
Vertical control.The doping controlled between at the top of T-shape minor matters by the voltage difference between additional positive electrode and additional negative electrode is different
The carrier concentration of material realizes on-off valve regulation, to carry out phase adjusted to incident electromagnetic wave.
The substrate is sapphire, High Resistivity Si, InP, GaAs or silicon carbide.
The feeder line and unit patch are Au, Ag, Cu or Al.
The material of ohm chip is Ti, Al, Ni or Au.
Adulterating dissimilar materials can be AlGaN/GaN, InGaN/GaN or AlGaAs/GaAs.
The artificial micro-structure polarization rotation reflective array is the array for the M*N that multiple units are constituted, wherein M > 2, N > 2.
Embodiment:
The present embodiment includes:
Metal base plate, material are the good conductors such as metallic aluminium, silver, gold,
Semiconductor substrate, material are sapphire, High Resistivity Si, silicon carbide etc.,
The phase-shift unit that the M × N orthogonal array mode being set on semiconductor substrate is arranged.
Referring to fig. 2, phase-shift unit includes resonant ring 3 and dipole concussion structure 4 with opening, dipole concussion structure
4 are set to the opening of resonant ring, and two endpoints of resonant ring are respectively connect with a rectangle metal strip, and tie point is located at
The center of the long side of rectangle metal strip, side of the rectangle metal strip long side perpendicular to the resonant ring where opening；In opening
Two rectangle metal strips between, the upper surface of medium substrate is provided with ohm chip, is provided with and mixes above ohm chip
It is parallel with two rectangle metal strips and equidistant to adulterate heterogeneous line for miscellaneous heterogeneous line.
In phase-shift unit array, the two sides of each column phase-shift unit are all respectively arranged with a cathode along alignment direction and draw
Outlet 1 and an anode lead wire 2, each column phase-shift unit are all positioned corresponding to the cathode terminal and anode lead wire of the column
Between；
In each column, the heterogeneous line of doping of phase-shift unit is connected to the anode lead wire of the column, and split ring resonator is connected to this
The cathode terminal of column；
Each cathode terminal is all connect with same root cathode bus, and cathode bus has an external cathode connecting pin；Respectively
Anode lead wire is independent of one another.
The material of ohm chip be Ti, Al, Ni or Au, adulterate heterogeneous line material be AlGaN/GaN, InGaN/GaN,
AlGaAs/GaAs, AlGaAs/InGaAs, AlGaAs/InGaAs/InP etc..
Such as Fig. 1,2, anode lead wire and cathode terminal are respectively arranged at the left and right sides of every column unit, anode lead wire
Connect the heterogeneous line of doping between at the top of all T-shape minor matters of the column, and all anode connecting lines be connected it is different it is additional just
Electrode.The doping controlled between at the top of T-shape minor matters by the voltage difference between additional positive electrode and additional negative electrode is heterogeneous
The carrier concentration of material realizes on-off switching, and then carries out phase regulation to electromagnetic beam.
The present invention realizes the phase regulation to Terahertz reflection electromagnetic wave, on-off shape by changing the on-off of transistor
State is controlled by applied voltage size.Specifically: when the positive electricity polar curve being connected in change structure with transistor electrodes and bear
When the loaded voltage difference of electrode wires, transistor will will appear truncation or on state.
Simulation result shows that applied voltage changes the truncation and on state of transistor, realizes to terahertz wave beam
Phase regulation.Fig. 3 illustrates phase-shift characterisitc of the phase-shift unit under specific voltage.OFF is indicated in specific voltage in figure, is located at
Transistor under artificial electromagnetic medium is in pinch off state, and ON indicates that when voltage is not added, transistor is in the conductive state.It can be seen that
Cellular construction reflected phase generates more apparent variation, in 0.36THz, the unit in ON and OFF with transistor state
There are the phase differences of 180 degree, and the variation of unit maximum phase is about 330 degree, and adjustable extent is larger.Fig. 4 illustrates unit
Amplitude characteristic, under ON and OFF two states, the insertion loss of cellular construction is small, which can realize phase
High efficiency modulation.The response characteristic of cellular construction, Fig. 5 illustrate phase shift array when Fig. 5 and Fig. 6 gives additional different voltages
Insertion loss under different voltages, Fig. 6 illustrate the phase-shift curve of unit.Voltage change shows that carrier is dense in HEMT structure
Degree will change.As it can be seen that phase-shift unit is sensitive to voltage change, in the variation of voltage small range, the corresponding change of unit is bright
It is aobvious, low switch may be implemented than work, and can be in a wide range of regulation of specific voltage realization phase.It is additional by adjusting
The dynamic regulation of phase may be implemented in voltage.
Claims (3)
1. the super surface phase changer of the automatically controlled resonance suitching type of Terahertz, which is characterized in that including the gold being successively arranged from bottom to top
Belong to bottom plate, medium substrate and phase-shift structure layer,
The phase-shift structure layer includes the phase-shift unit being arranged in a manner of M × N orthogonal array, and each phase-shift unit includes a square
Shape split ring resonator, the midpoint on side where the opening of resonant ring is located at it, in the opening of resonant ring, the two of resonant ring
A endpoint is respectively connect with a rectangle metal strip, and tie point is located at the center of the long side of rectangle metal strip, rectangle gold
Belong to a long side perpendicular to the side of the resonant ring where opening；Between two rectangle metal strips of opening, medium substrate
Upper surface is provided with ohm chip, and the heterogeneous line of doping is provided with above ohm chip, adulterates heterogeneous line and two rectangle gold
It is parallel and equidistant to belong to item, M, N are all the integer greater than 2；
In phase-shift unit array, the two sides of each column phase-shift unit are all respectively arranged with a cathode terminal along alignment direction
With an anode lead wire, each column phase-shift unit is all positioned corresponding between the cathode terminal of the column and anode lead wire；
In each column, the heterogeneous line of doping of phase-shift unit is connected to the anode connecting line of the column, and split ring resonator is connected to the column
Cathode connecting line；
Each cathode terminal is all connect with same root cathode bus, and cathode bus has an external cathode connecting pin；Each anode
Lead-out wire is independent of one another.
2. the super surface phase changer of the automatically controlled resonance suitching type of Terahertz as described in claim 1, which is characterized in that doping is heterogeneous
The material of line is AlGaN, GaN, InGaN, GaN, AlGaAs or GaAs.
3. the super surface phase changer of the automatically controlled resonance suitching type of Terahertz as described in claim 1, which is characterized in that medium substrate
Material be substrate be sapphire, High Resistivity Si, InP, GaAs or silicon carbide.
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| CN201910568565.2A CN110444889B (en) | 2019-06-27 | 2019-06-27 | Terahertz electric control resonance switching type super-surface phase shift device |
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| CN201910568565.2A CN110444889B (en) | 2019-06-27 | 2019-06-27 | Terahertz electric control resonance switching type super-surface phase shift device |
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Cited By (5)
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| CN113036460A (en) * | 2021-02-25 | 2021-06-25 | 联想(北京)有限公司 | Programmable large-scale antenna |
| CN113937511A (en) * | 2021-09-30 | 2022-01-14 | 联想(北京)有限公司 | Programmable large-scale antenna |
| CN114142898A (en) * | 2021-12-03 | 2022-03-04 | 深圳市大数据研究院 | Intelligent reflecting surface phase shift control method and related product |
| WO2023286132A1 (en) * | 2021-07-12 | 2023-01-19 | Nippon Telegraph And Telephone Corporation | Beamformer |
| CN117254262A (en) * | 2023-11-17 | 2023-12-19 | 南京数捷电子科技有限公司 | Coding regulation and control structure of three-dimensional direction far-field wave beam of terahertz wave |
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