CN112909564A - Electrical triggering reconfigurable terahertz digital super surface based on vanadium oxide phase change - Google Patents
Electrical triggering reconfigurable terahertz digital super surface based on vanadium oxide phase change Download PDFInfo
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- CN112909564A CN112909564A CN202011640784.6A CN202011640784A CN112909564A CN 112909564 A CN112909564 A CN 112909564A CN 202011640784 A CN202011640784 A CN 202011640784A CN 112909564 A CN112909564 A CN 112909564A
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- phase change
- square ring
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- 230000008859 change Effects 0.000 title claims abstract description 32
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910001935 vanadium oxide Inorganic materials 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 230000001960 triggered effect Effects 0.000 claims description 15
- 239000012782 phase change material Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 2
- 229910000510 noble metal Inorganic materials 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 13
- 230000000737 periodic effect Effects 0.000 abstract description 8
- 230000009471 action Effects 0.000 abstract description 4
- 238000002834 transmittance Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
Abstract
The invention relates to an electric triggering reconfigurable terahertz digital super surface based on vanadium oxide phase change, which comprises a plurality of super surface units arranged in an array; each super-surface unit comprises a dielectric layer, two corresponding side surfaces of the dielectric layer are respectively provided with a combined resonance unit, each combined resonance unit is a metal square ring body, one edge of each square ring body is provided with an opening, and a phase change medium is arranged in each opening; when electromagnetic waves enter, a large amount of charges are accumulated on two sides of the square ring of the two periodic structures vertical to the direction of the electric field under the action of the electric field, the charges are equivalent to capacitance, and the square ring of the single periodic structure is equivalent to inductance, so that an electromagnetic resonance loop is formed. The super-surface structure can realize the switching of 0 and 1 states of a broadband, and the stability of the device is improved.
Description
Technical Field
The invention relates to the field of electromagnetic filtering, in particular to an electrically-triggered reconfigurable terahertz digital super surface based on vanadium oxide phase change.
Background
The active tuning optical transmission function of the hybrid super-surface based on the phase-change material has great prospect in the next generation of optical devices. In the terahertz (THz) range, such devices are still rare due to the lack of dynamic and multifunctional designs and materials.
Many researchers have done many years to achieve a tunable multifunctional super surface. Tunable methods include Micro-electro-mechanical systems (MEMS), physical tuning (Geometrical tuning), liquid crystal and semiconductor doping. However, tuning is difficult to achieve using these methods, such as high drive voltages where MEMS are difficult to interface with CMOS control circuitry; the control mechanisms required for physical tuning are complex to design and manufacture and need to be considered in the simulation; the liquid crystal is difficult to realize integrated design, so that the whole device is integrated and chipped; the semiconductor requires a large bias voltage, which is obviously undesirable. In the prior art (Multifunctional hardware for Dynamic Tuning of Terahertz Waves [ J ]. Advanced Optical Materials,2018,6(14):1800257.) (Liu L, Kang L, major T S, et al. hardware for electrically triggered Multifunctional control [ J ]. Nature Communications,2016:13236.), the switching side of the digital super surface implementation 0 and 1 is weighted at one frequency point, with large errors.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention mainly aims to provide an electrically-triggered reconfigurable terahertz digital super surface based on vanadium oxide phase change.
The invention is realized by at least one of the following technical schemes.
An electric trigger reconfigurable terahertz digital super surface based on vanadium oxide phase change comprises a plurality of super surface units arranged in an array; each super-surface unit comprises a dielectric layer, two corresponding side surfaces of the dielectric layer are respectively provided with a combined resonance unit, the combined resonance units are metal square ring bodies, one edge of each square ring body is provided with an opening, and a phase change medium is arranged in each opening.
Preferably, the side of the square ring body on one side of the dielectric layer, which is provided with the opening, is 170um, and the side of the side opposite to the opening is 240 um; the square ring body on the other side of the dielectric layer is provided with an opening, the side length of the side provided with the opening is 158um, and the side length of the side opposite to the opening is 240 um.
Preferably, the square ring body is arranged at the center of the medium layer.
Preferably, the opening is located the middle part of square ring body side, opening length be 12 um.
Preferably, the phase change medium is a square block, and the height of the square ring is the same as that of the square block.
Preferably, the thicknesses of the square ring body and the square block body are both 1 um; the length and the width of the square block body are both 12 um.
Preferably, the square ring body is made of noble metal.
Preferably, the cube is made of a phase-change material.
Preferably, the phase change material is vanadium dioxide, the dielectric layer is made of Rogers RT/duriod5880 material, and the square ring body is made of copper;
the phase-change material has the conductivity of 300S/m at the temperature of 25 ℃ when no voltage is applied, and the conductivity of 300000S/m at the temperature of 88 ℃ when 60mv voltage is applied.
Preferably, the dielectric layer is a cube with a thickness of 100um and a dielectric constant of 2.2
Compared with the prior art, the invention has at least the following beneficial effects:
the super surface of the invention realizes the widening of the frequency band by stacking the resonance units in the vertical direction, and compared with the prior art which realizes the switching of 0 and 1 states at one frequency point, the super surface structure of the invention can realize the switching of 0 and 1 states of a wide frequency band, thereby increasing the stability of the device. Compared with the method of laying the whole vanadium oxide film on the super-surface structure, the Joule heat generated by the metal does not need to be dissipated to the whole device, and the switching speed is high. The super-surface is provided with a combined resonance unit on the upper surface and the lower surface of the dielectric layer, and the combined resonance unit is composed of a square ring body protruding from two sides of one side and a cuboid horizontally placed at the opening of the square ring body protruding from two sides of one side. When electromagnetic waves enter, a large amount of charges are accumulated on two sides of the square ring of the two periodic structures vertical to the direction of the electric field under the action of the electric field, the charges are equivalent to capacitance, and the square ring of the single periodic structure is equivalent to inductance, so that an electromagnetic resonance loop is formed. The super-surface structure achieves switching of 1 and 0 states from 0.494THz to 0.579THz before and after electrification, and an electric trigger digital super-surface is achieved.
Drawings
FIG. 1 is a schematic diagram of a complete structure of an electrically triggered reconfigurable terahertz digital super surface based on vanadium oxide phase change;
FIG. 2 is a schematic structural view of a single periodic digital super surface of the present invention;
FIG. 3 is a single period digital super-surface left view of the present invention;
FIG. 4a is a graph of the electric field distribution of a single period of the digital meta-surface of the present invention at 0.579 THz;
FIG. 4b is a current vector diagram corresponding to a single cycle of the digital meta-surface of the present invention at 0.494 THz;
FIG. 5 is a graph of transmittance corresponding to a single period of a digital super-surface of the present invention before and after a phase change in a phase change material;
reference numerals: 1. the phase-change resonator comprises a dielectric layer, 2, a combined resonance unit, 3, an opening, 4, a square ring body on the upper surface of the dielectric layer, 5, a square ring body on the lower surface of the dielectric layer, 6 and a phase-change medium.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings, and the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without any creative effort belong to the protection scope of the present invention.
In the present invention, the height refers to the dimension in the Z direction in fig. 1 and 2, and the thickness of the square ring body refers to the dimension of the square ring body in the Z direction.
Fig. 1 and 3 are schematic structural diagrams of an electrically triggered reconfigurable terahertz digital super-surface based on vanadium oxide phase change in the present embodiment, fig. 2 is a schematic structural diagram of a digital super-surface in a single period in fig. 1, that is, a schematic structural diagram of a digital super-surface, as shown in the figure, the electrically triggered reconfigurable terahertz digital super-surface based on vanadium oxide phase change in the present embodiment is composed of a plurality of digital super-surface units arranged in an array, each super-surface unit includes a dielectric layer 1, two corresponding side surfaces of the dielectric layer 1 are respectively provided with a combined resonance unit 2, the combined resonance unit 2 is a metal square ring body, one edge of the square ring body is provided with an opening 3, and a phase change medium 6 is arranged in the opening. When electromagnetic waves enter, a large amount of charges are accumulated on two sides of the square ring bodies of the two periodic structures vertical to the direction of the electric field under the action of the electric field, the charges are equivalent to capacitance, and the square ring bodies of the single periodic structure are equivalent to inductance, so that an electromagnetic resonance loop is formed. The combined resonance unit 2 at the top of the dielectric layer and the combined resonance unit 2 at the bottom of the dielectric layer form reverse current due to excitation of magnetic resonance, a capacitor is formed between the two combined resonance units 2, and the combined resonance unit 2 at the bottom of the dielectric layer is equivalent to an inductor and forms an electromagnetic resonance loop.
The dielectric layer 1 is a cube with equal side length, the side length of the dielectric layer 1 is 240 μm, the thickness of the dielectric layer 1 is 95-110 μm, and 100 μm is selected in the example.
The thicknesses of the square ring body and the square phase change medium 6 are 1 mu m. The square ring body and the square phase change medium 3 are arranged in the center of the medium layer 1.
The square rings on the corresponding two sides of the dielectric layer 1 are of the same configuration but of different dimensions. The square ring body 4 on the upper surface of the dielectric layer 1 is provided with an opening, the side length of the opening is 170 micrometers, the side length of the side opposite to the opening is 240 micrometers, and the width of the square ring body 4 is 12 micrometers; the square ring body 5 on the lower surface of the dielectric layer 1 is provided with an opening, the side length of the opening is 158um, the side length of the opening opposite to the opening is 240um, and the width of the square ring body 5 is 12 um.
Phase change medium 6 sets up the opening part at square ring body, phase change medium 6 is the square block body, and the length and the width of square block body all are 12 um.
In this embodiment, the material of the square ring body is preferably copper. The dielectric layer 1 is preferably Rogers RT/duriod5880, which has a dielectric constant of 2.2 and a thickness of preferably 100 μm. The phase change material 6 is vanadium oxide, preferably 1 μm thick. The conductivity of the phase-change material is 300S/m when no voltage is applied, and is 300000S/m when the voltage is applied. Two distinct resonances are generated near the incident frequencies 0.579THz and 0.494THz, with a transmission of almost 0. Before the super surface is electrified, the transmissivity is more than 0.7 between 0.494THz and 0.579THz, and after the square ring body is electrified, Joule heat is generated to cause the conductivity of the phase change medium to change greatly, so that the transmissivity of the super surface is almost changed to 0 between 0.494THz and 0.579 THz. The super-surface structure realizes the switching of 1 and 0 states between 0.494THz and 0.579THz before and after electrification, and realizes an electric trigger digital super-surface. Preferred data of the present invention achieve high quality broadband transmittance switching with resonance profiles and electric field profiles as detailed in fig. 4-5.
In this embodiment, when the incident electromagnetic wave is incident on the resonant structural unit (as shown in fig. 2) perpendicularly to the structure along the z direction, the conductivity of the phase-change medium 6 is very small when no voltage is applied, and the whole structure does not find obvious resonance in the whole experimental band and has low transmittance. When 60mv of voltage is applied, the joule heating temperature of the metal reaches the phase transition temperature of vanadium oxide, and the conductivity thereof is abruptly changed to 300000S/m, as can be seen from fig. 5, the present invention generates fine resonance at 0.494THz and 0.576THz, and the transmittance at both frequency points is almost 0, and it can be observed that the transmittance is small in the range of 0.494THz to 0.576 THz. The electric field profile of the structure measured at the resonant frequency of 0.576THz is shown in figure 4 a. When electromagnetic waves enter, the metal arms of two periodic structures perpendicular to the electric field direction gather a large amount of charges due to the action of the electric field and are equivalent to capacitors, while the metal arms parallel to the electric field direction are equivalent to inductors to form a resonant circuit, so that obvious resonance is generated near the incident frequency 0.579THz, and the electric field intensity of the corresponding position is large. The current profile of the structure measured at the resonant frequency of 0.494THz is shown in fig. 4b, and it can be seen from the current profile that one metal arm of the square ring body located at the top of the dielectric layer 1 and one metal arm of the square ring body located at the bottom of the dielectric layer 1 are opposite in current direction, because the excitation of magnetic resonance forms a reverse current, a capacitance is formed between the two square ring bodies, the bottom metal layer is equivalent to an inductance, and an electromagnetic resonance loop is formed.
The digital super surface realizes electric resonance and magnetic resonance through the conductivity change of the phase change material at the same time, and achieves excellent broadband filtering effect through superposing the resonance units in the vertical direction. The transmittance of the device in an experimental waveband is changed by means of changing the conductivity of the phase-change material by applying voltage to enable metal to generate Joule heat. A low transmittance is equivalent to state 0 and a high transmittance is equivalent to state 1. The stopband range can also be adjusted according to size. The whole structure has the characteristics of wide stop band, electric trigger control, flexible design and the like.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. An electric triggering reconfigurable terahertz digital super surface based on vanadium oxide phase change is characterized in that the super surface comprises a plurality of super surface units arranged in an array; each super-surface unit comprises a dielectric layer (1), two corresponding side faces of the dielectric layer (1) are respectively provided with a combined resonance unit (2), each combined resonance unit (2) is a metal square ring body, one edge of each square ring body is provided with an opening (3), and a phase change medium (6) is arranged in each opening.
2. The electrically-triggered reconfigurable terahertz digital super-surface based on vanadium oxide phase change as claimed in claim 1, wherein the side of the square ring body on one side of the dielectric layer (1) provided with the opening has a side length of 170um, and the side opposite to the opening has a side length of 240 um; the square ring body on the other side of the dielectric layer (1) is provided with an opening, the side length of the side provided with the opening is 158um, and the side length of the side opposite to the opening is 240 um.
3. The electrically triggered reconfigurable terahertz digital super surface based on vanadium oxide phase change according to claim 2, wherein the square ring body (2) is arranged at the center of the dielectric layer (1).
4. The electrically triggered reconfigurable terahertz digital super surface based on vanadium oxide phase change of claim 3, wherein the opening is located in the middle of the side of the square ring body, and the length of the opening is 12 um.
5. The electrically triggered reconfigurable terahertz digital super surface based on vanadium oxide phase change according to claim 4, wherein the phase change medium (6) is a square block body, and the height of the square ring body is the same as that of the square block body.
6. The electrically triggered reconfigurable terahertz digital super surface based on vanadium oxide phase change of claim 5, wherein the thickness of the square ring body and the square block body is 1 um; the length and the width of the square block body are both 12 um.
7. The electrically triggered reconfigurable terahertz digital super surface based on vanadium oxide phase transition is characterized in that the square ring body is made of noble metal.
8. The electrically triggered reconfigurable terahertz digital super surface based on vanadium oxide phase change according to claim 7, wherein the square block body is made of a phase change material.
9. The electrically triggered reconfigurable terahertz digital super surface based on vanadium oxide phase change of claim 8 is characterized in that the phase change material is vanadium dioxide, the dielectric layer (1) is made of Rogers RT/duriod5880 material, and the square ring is made of copper;
the phase-change material has the conductivity of 300S/m at the temperature of 25 ℃ when no voltage is applied, and the conductivity of 300000S/m at the temperature of 88 ℃ when 60mv voltage is applied.
10. The electrically triggered reconfigurable terahertz digital super-surface based on vanadium oxide phase change according to claims 1 to 9, wherein the dielectric layer (1) is a cube with a thickness of 100um, and the dielectric constant of the dielectric layer (1) is 2.2.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030030519A1 (en) * | 2001-05-09 | 2003-02-13 | Wyeth N. Convers | Phase change switches and circuits coupling to electromagnetic waves containing phase change switches |
| WO2019033140A1 (en) * | 2017-08-18 | 2019-02-21 | The Australian National University | A modulation system and method, polarization control system and method and isolator device and method |
| CN109814283A (en) * | 2019-03-27 | 2019-05-28 | 电子科技大学 | The super surface modulation device of the open type Terahertz of low voltage drive and preparation method |
| CN110011008A (en) * | 2019-03-31 | 2019-07-12 | 华南理工大学 | A kind of Terahertz Broadband bandstop filter based on super surface |
| CN110492250A (en) * | 2019-07-31 | 2019-11-22 | 电子科技大学 | A kind of tunable super lens of flexibility based on the super surface of dynamic |
| CN111725591A (en) * | 2020-07-06 | 2020-09-29 | 中国计量大学 | Adjustable super surface based on vanadium dioxide square |
-
2020
- 2020-12-31 CN CN202011640784.6A patent/CN112909564A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030030519A1 (en) * | 2001-05-09 | 2003-02-13 | Wyeth N. Convers | Phase change switches and circuits coupling to electromagnetic waves containing phase change switches |
| WO2019033140A1 (en) * | 2017-08-18 | 2019-02-21 | The Australian National University | A modulation system and method, polarization control system and method and isolator device and method |
| CN109814283A (en) * | 2019-03-27 | 2019-05-28 | 电子科技大学 | The super surface modulation device of the open type Terahertz of low voltage drive and preparation method |
| CN110011008A (en) * | 2019-03-31 | 2019-07-12 | 华南理工大学 | A kind of Terahertz Broadband bandstop filter based on super surface |
| CN110492250A (en) * | 2019-07-31 | 2019-11-22 | 电子科技大学 | A kind of tunable super lens of flexibility based on the super surface of dynamic |
| CN111725591A (en) * | 2020-07-06 | 2020-09-29 | 中国计量大学 | Adjustable super surface based on vanadium dioxide square |
Non-Patent Citations (2)
| Title |
|---|
| LI JIAHUI等: "Frequency-switchable VO2-based coding metasurfaces at the terahertz band", 《OPTICS COMMUNICATIONS》 * |
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