CN104536089A - Periodically poled Ti-diffusion near-stoichiometry lithium niobate slab waveguide and preparation method - Google Patents
Periodically poled Ti-diffusion near-stoichiometry lithium niobate slab waveguide and preparation method Download PDFInfo
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- CN104536089A CN104536089A CN201410751516.XA CN201410751516A CN104536089A CN 104536089 A CN104536089 A CN 104536089A CN 201410751516 A CN201410751516 A CN 201410751516A CN 104536089 A CN104536089 A CN 104536089A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
Abstract
The invention discloses a preparation method of a periodically poled Ti-diffusion near-stoichiometry lithium niobate slab waveguide. The preparation method includes the eight steps of sample preparation, photoetching, sputtering of a Ti-metal film, stripping, pre-diffusion of the Ti-metal film, Li-rich VTE processing, polishing of an optical waveguide end surface and periodical poling. Compared with the prior art, the optical waveguide is good in performance, small in loss and good in optical uniformity, has a few crystal defects, has the unique advantages of being high in speed, low in noise, high in efficiency and free of chirping in the wavelength conversion process, converts multiple wave lengths downwards and upwards simultaneously at the same efficiency, and can realize fully transparent conversion.
Description
Technical field
The present invention relates to optical waveguide field, particularly relate to a kind of by titanium diffusion, VTE (gas phase transport balance) and the period polarized method preparing near stoichiometric proportion Ti:PPLN lithium niobate strip optical waveguide.
Background technology
Waveguide, is used to the electromagnetic structure of directional guide.Common waveguiding structure mainly contains parallel double conducting wire, coaxial cable, parallel flat waveguide, rectangular waveguide, circular waveguide, microstrip line, slab dielectric optical waveguide and optical fiber.From the angle of guide electromagnetic waves, they all can be divided into interior zone and perimeter, and electromagnetic wave is limited in interior zone and propagates (requiring in waveguide cross-section, meet transverse resonance principle).
Usually, waveguide specially refers to hollow metal waveguide and the surface wave guide of various shape, and the electromagnetic wave be transmitted is limited in metal tube by completely, also known as closed waveguide; The electromagnetic wave of guiding constrains in around waveguiding structure, also known as open waveguide by the latter.When radio wave frequency brings up to centimeter wave wave band and the millimeter wave band of 3000 megahertz to 300 gigahertz (GHZ)s, the use of coaxial cable is restricted and adopts metallic waveguide or other guide wave devices.The advantage of metallic waveguide is that conductor losses and dielectric loss are little, power capacity large, do not have radiation loss, structure simple, be easy to manufacture.Electromagnetic field in metallic waveguide can by the Boundary Condition for Solving of maxwell equation group in conjunction with waveguide, different from normal transmission line, can not transmit TEM mould in metallic waveguide, there is serious dispersion phenomenon in electromagnetic wave in the air, and dispersion phenomenon illustrates that electromagnetic wave propagation speed is relevant with frequency.The feature of surface wave guide is outside border, have electromagnetic field to exist.Its communication mode is surface wave.At millimeter wave and submillimeter wave wave band, the size because of metallic waveguide is too little and loss is strengthened and manufactures difficulty.At this moment use surface wave guide, except having good transmission, major advantage is that structure is simple, makes easily, can have the planar structure that integrated circuit needs.
Lithium columbate crystal is the good multifunctional light electric material of a kind of thermal stability, chemical stability, has outstanding piezoelectricity, acousto-optic, electric light, ferroelectric, pyroelectricity, the performance such as non-linear.At present, be that the photovalve of substrate has obtained and applies widely in optical communication modulator, laser modulator, optoisolator, laser frequency multiplier etc. with lithium columbate crystal.
Compared with same composition lithium columbate crystal, lithium niobate crysal with near stoichiometric ratio has numerous excellent properties: 1, the anti-light of crystal causes lesion capability more by force, approximately improves an order of magnitude; 2, matter crystal internal defect is few, and therefore crystal response speed can be faster, and its response time can foreshorten to tens to hundreds of millisecond.Method now for lithium niobate crysal with near stoichiometric ratio growth preparation mainly contains following several: mix flux growth metrhod, double crucible method and vapor transportation balancing method.
At present, the lithium columbate crystal adopting Czochralski grown is mostly the congruent crystal departing from its stoichiometric compositions, show as the disappearance of Li atom, by the Li/Nb ratio (Li/Nb) adding kali or change in lithium niobate melt in congruent melt, or by gas phase transportation balance (VTE) technology, crystal is processed etc., can change the Li/Nb ratio in lithium columbate crystal, thus the LN crystal of near stoichiometric proportion is prepared in growth.
The good lithium niobate crysal with near stoichiometric ratio of optical quality can be grown by mixing kali flux.But because kali can not enter in crystal substantially, the component of melt constantly can be grown up with crystal and changed, and causes the upper and lower component of crystal uneven.The lithium niobate crysal with near stoichiometric ratio component of double crucible method growth is relatively more even, and can grow large-sized crystal.But adopt the stoichiometric proportion raw material that need continue to insert equivalent in this way in the growth course of crystal, require to use automated packing system, technical equipment more complicated, common laboratory is difficult to realize.To obtain near stoichiometric proportion LN crystal different from first two method direct growth, and rich lithium VTE is with same composition lithium columbate crystal for starting material, obtain near stoichiometric proportion LN crystal by changing its component.Adopt the component of Lithia in the wafer of VTE fabrication techniques can reach mole fraction 50.0%, and component is relatively uniform.Compared with first two method, rich lithium VTE technical costs is minimum, has important researching value.Along with the research of the device of all-optical switch, periodically poled lithium niobate wavelength shifter is applied, VTE fabrication techniques lithium niobate crystal chip with near stoichiometric ratio is adopted to be subject to attracting attention of people.
Lithium niobate fiber waveguide can be divided into preparation method: titanium diffusion lithium niobate fiber waveguide, ion-exchange lithium niobate fiber waveguide and proton exchange lithium niobate fiber waveguide etc.Ion-exchange, proton-exchanged optical waveguide are because of optics unstable properties during high temperature, and application is restricted.Use titanium diffusion technique at the bottom of lithium niobate base on to make optical waveguide be unusual proven technique.People have done detailed theoretical research to titanium diffusion technique, find that titanium atom diffuses in crystal with the form substituted.Under the high temperature conditions, titanium atom can be diffused into lithium columbate crystal inside, and elasto-optical effect and electrooptical effect make the refractive index of titanium diffusion zone increase, thus forms the optical waveguide of gradually changed refractive index.
The fast development of integrated optics and optical communication technique requires more and more higher to wavelength shifter.The class device in the past made using other body materials such as lithium niobates as core parts can not meet current to optical device miniaturization, integrated requirement.Compared with congruent lithium columbate crystal, titanium diffusion near stoichiometric proportion optical waveguide has important research and using value.
Summary of the invention
In order to overcome the defect of above-mentioned prior art, the present invention proposes a kind of period polarized titanium diffusion near-stoichiometric ratio lithium niobate strip optical waveguide preparation method, by titanium diffusion, VTE (gas phase transport balance) with period polarizedly prepare near stoichiometric proportion Ti:PPLN lithium niobate strip optical waveguide.
The present invention proposes a kind of period polarized titanium diffusion near-stoichiometric ratio lithium niobate strip optical waveguide preparation method, the method comprises the following steps:
Step 1, the same composition lithium niobate crystal chip using optical grade Z to cut 0.5mm thick are original material, re-use the sample that original material is cut into 15mm (length) × 10mm (wide) by precision gas cutting machine;
Step 2, first that sample clean is clean, put and toast 10min on hot plate, temperature is 85 DEG C; Then, use sol evenning machine applies one deck SPR6112B type photoresist on sample, and the rotating speed of setting sol evenning machine is 3000r/min, spin-coating time is 1min; Afterwards, the sample of complete for spin coating photoresist, at 85 DEG C, 10min is toasted; Next, select the width with mask plate striped exposed portion to be the mask plate of the slab waveguide pattern of 6 μm, sample and this mask plate are put on the operator's console of litho machine, adjusts position, exposure 40s; Service property (quality) number percent be 0.5% sodium hydroxide solution carry out 16s development treatment, after exposed portion photoresist dissolves, use rapidly pure washed with de-ionized water clean, then use high-purity elevated pressure nitrogen air gun to be dried up by sample; Finally, by having carried out the wafer of development treatment, having put and toasting 10min on hot plate, temperature is 85 DEG C;
The sputter coating that d.c. sputtering machine carries out platinum/titanium metal thin film put into by step 3, sample, is filled with argon gas during sputtering, makes pressure maintain approximate 4Pa;
Step 4, utilize supersonic wave cleaning machine use acetone the sample having plated platinum/titanium metal thin film is peeled off, wash plating titanium on a photoresist off; With alcohol and high-purity deionized water to the wafer cleaning after peeling off, after having cleaned, dried up by sample with high-purity elevated pressure nitrogen air gun, the thickness recording the titanium metal film of now sample is 90nm;
Step 5, sample is put into high temperature furnace, carries out the prediffusion of platinum/titanium metal thin film, time and temperature be respectively 5h, 1100 DEG C, ensure that titanium ion enters lithium columbate crystal inside;
Step 6, sample to be put into by mole fraction than the Li2CO being 68mol%:32mol%
3and Nb
2o
5in the rich lithium crucible that mixed-powder sinters into, below sample, add one deck platinum pad; By crucible with after rich lithium powder sealing, put into box high-temperature energy-conservation stove and carry out rich lithium VTE process; The running-course control of box-type high-temperature furnace is at four-stage: the stage (1), in 50min, rise to 400 DEG C by 25 DEG C; Stage (2), 400 DEG C be heated to 1100 DEG C, used time 140min; Stage (2), at 1100 DEG C, maintain 30h; Stage (4), be down to room temperature by 1100 DEG C.
Step 7, priority particle diameter are that the burnishing powder of 20 μm, 7 μm, 1.5 μm carries out sample polishing, then carry out polishing with polishing fluid to the end face of sample;
The lithographic processing method of step 8, again employing step 2, the optical waveguide end face of the sample of step 7 gained produces cycle pattern, and the cycle of the electrode mask plate selected in photoetching process is 45 μm; After photoetching completes, the thickness recording photoresist is 4.5 μm; Then, plate one deck aluminum metal film at the sample surfaces finishing photoetching, strengthen electric conductivity; Sample is put into liquid electrode fixture, and use silica gel pad good seal; Afterwards, in liquid electrode fixture, inject saturated LiCl solution, the appearance of bubble should be avoided in the process injecting solution; Access high-voltage square-wave pulse generating system, the setting polarization time is 0.85s, and the output voltage of high-voltage DC power supply is 4.0kV.
After step 9, polarization, the metal electrode of sample surfaces is wiped, remove the LiCl liquid of sample surfaces, clean up, i.e. Ti:PPLN optical waveguide.
The invention allows for a kind of period polarized titanium diffusion near-stoichiometric ratio lithium niobate strip optical waveguide, the sample that this product is processed into based on lithium columbate crystal and forming, on+Z the face of described lithium columbate crystal sample, the periodical domain reversal structure formed after there is the slab waveguide structure that diffuseed to form by titanium and the polarization process by periodic electrode.
Compared with prior art, optical waveguide prepared by the present invention, have premium properties: loss is little, crystal defect is few, and optical homogeneity is good, and unique advantage can be had in wavelength conversion: speed is fast, noise is low, and efficiency is high, without warbling, and, upwards change multiple wavelength downwards with identical efficiency simultaneously, all-transparent conversion can be realized.
Accompanying drawing explanation
Fig. 1, titanium diffusion lithium niobate fiber waveguide manufacturing process flow schematic diagram;
Wherein: 100, lithium columbate crystal; 101, photoresist; 102, mask plate; 103, titanium film; 104, optical waveguide; 110, even glue; 111, expose; 112, develop; 113, titanizing; 114, peel off; 115, spread; 116, end face polishing;
Fig. 2, period polarized flow process;
Wherein: 201, titanium diffused optical waveguide, 202, liquid electrode, 203, metal electrode, 204, Ti:PPLN optical waveguide, 211, period polarized
Fig. 3, rich lithium vapor transportation balance schematic diagram;
Wherein: 301, rich lithium crucible; 302, rich lithium powder; 303, titanium diffused optical waveguide sample
Fig. 4, polarized circuit schematic diagram
Wherein: 401, high-voltage DC power supply; 402, divider resistance; 403, positive pole; 404, titanium diffused optical waveguide sample; 405, negative pole; 406, divider resistance; 407, the liquid electrode fixture of LiCl is filled.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail, but practical range of the present invention is not limited thereto.
As shown in Figure 1, be the schematic flow sheet of near stoichiometric proportion titanium diffusion strip optical waveguide process for making of the present invention.
Its period polarized flow process of near stoichiometric proportion Ti:PPLN optical waveguide of the present invention and related process as Fig. 2, comprise.
The specific embodiment of the present invention is as follows:
(1) preparation of samples.What the present invention selected is, and optical grade Z cuts the thick same composition lithium niobate crystal chip of 0.5mm is original material.Precision gas cutting machine is used wafer to be cut into the sample of 15mm (length) × 10mm (wide);
(2) photoetching.First, put by the sample cleaned up and toast 10min on hot plate, temperature is 85 DEG C.Then, use sol evenning machine on sample, apply one deck SPR6112B type photoresist, the rotating speed of setting sol evenning machine is 3000r/min, and the time is 1min.Afterwards, at 85 DEG C, the sample of complete for spin coating photoresist baking 10min.Next, carry out exposure-processed: after exposed portion photoresist dissolves, use rapidly pure washed with de-ionized water clean.Then high-purity elevated pressure nitrogen air gun is used to be dried up by sample.Sample and mask plate are put on the operator's console of litho machine, adjusts position, exposure 40s, wherein selected mask plate to be the width being manufactured with mask plate striped exposed portion the be slab waveguide pattern of 6 μm.Then, carry out development treatment: service property (quality) number percent is the sodium hydroxide solution of 0.5%, development time is 16s, after exposed portion photoresist dissolves, uses rapidly pure washed with de-ionized water clean.Then high-purity elevated pressure nitrogen air gun is used to be dried up by sample.Finally, by having carried out the wafer of development work, having put and toasting 10min on hot plate, temperature is 85 DEG C.The object of cleaning after development is the developer solution that removing sample surfaces remains, and prevents excessive corrosion damaging surface lithographic pattern.
(3) sputtered titanium metallic film.Sample is put into the sputtering that d.c. sputtering machine carries out platinum/titanium metal thin film.Be filled with argon gas during sputtering, make pressure maintain about 4Pa;
(4) peel off.Use acetone to peel off the sample having plated platinum/titanium metal thin film, utilize supersonic wave cleaning machine to wash plating titanium on a photoresist off.After stripping completes, use alcohol and high-purity deionized water to wafer cleaning.After having cleaned, high-purity elevated pressure nitrogen air gun is used to be dried up by sample.Step instrument is utilized to record the thickness of titanium metal film for 90nm;
(5) titanium metal film prediffusion.Sample is put into high temperature furnace, carries out the prediffusion of platinum/titanium metal thin film, time and temperature be respectively 5h, 1100 DEG C.Can ensure that titanium ion enters lithium columbate crystal inside like this;
(6) rich lithium VTE process.Rich lithium VTE technical finesse is used to complete the sample of platinum/titanium metal thin film prediffusion.Device as shown in Figure 3.Wafer is put into by mole fraction than the Li2CO being 68mol%:32mol%
3and Nb
2o
5in the rich lithium crucible 301 that mixed-powder sinters into, one deck platinum pad below sample, to be added, directly contact with rich lithium crucible 301 to avoid titanium diffused optical waveguide sample 303.After being sealed with rich lithium powder 302 by crucible, put into box high-temperature energy-conservation stove.The operational process of box-type high-temperature furnace is by procedure auto-control.To sample at 1100 DEG C, process 30h, meanwhile, considers high temperature furnace self intensification requirement.Therefore, design is divided into four-stage: a low temperature rapid heating condition, in 50min, rises to 400 DEG C by 25 DEG C; Two high temperature temperature-rise periods, 400 DEG C are heated to 1100 DEG C, used time 140min; Three is holding stages, at 1100 DEG C, maintain 30h; Four temperature-fall periods, are down to room temperature by 1100 DEG C;
(7) optical waveguide end face polishing.Priority particle diameter is that the burnishing powder of 20 μm, 7 μm, 1.5 μm carries out polishing, then carries out polishing with polishing fluid to the end face of optical waveguide;
(8) period polarized.In polarization process, use high pressure ammeter and oscillograph place in circuit, circuit connects as shown in Figure 4.Photoetching technique is adopted to produce cycle pattern on the waveguide surface of sample.The concrete process of this photoetching is identical with step (2), and the cycle of the electrode mask plate selected in photoetching process is 45 μm.After photoetching completes, the thickness using step instrument to record photoresist is 4.5 μm.Then, use the method for evaporation, plate one deck aluminum metal film in the waveguide surface finishing photoetching, strengthen electric conductivity.Waveguide sample is put into liquid electrode fixture 407, and use silica gel pad good seal.Afterwards, what inject in liquid electrode fixture is saturated LiCl solution, should avoid the appearance of bubble in the process injecting solution as far as possible.Access high-voltage square-wave pulse generating system.The setting polarization time is 0.85s, and the output voltage of high-voltage DC power supply is 4.0kV.
Although invention has been described for composition graphs above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; instead of it is restrictive; those of ordinary skill in the art is under enlightenment of the present invention; when not departing from present inventive concept, can also make a lot of distortion, these all belong within protection of the present invention.
Claims (4)
1. a period polarized titanium diffusion near-stoichiometric ratio lithium niobate strip optical waveguide preparation method, it is characterized in that, the method comprises the following steps:
Step 1, the same composition lithium niobate crystal chip using optical grade Z to cut 0.5mm thick are original material, re-use the sample that original material is cut into 15mm (length) × 10mm (wide) by precision gas cutting machine;
Step 2, first that sample clean is clean, put and toast 10min on hot plate, temperature is 85 DEG C; Then, use sol evenning machine applies one deck SPR6112B type photoresist on sample, and the rotating speed of setting sol evenning machine is 3000r/min, spin-coating time is 1min; Afterwards, the sample of complete for spin coating photoresist, at 85 DEG C, 10min is toasted; Next, select the width with mask plate striped exposed portion to be the mask plate of the slab waveguide pattern of 6 μm, sample and this mask plate are put on the operator's console of litho machine, adjusts position, exposure 40s; Service property (quality) number percent be 0.5% sodium hydroxide solution carry out 16s development treatment, after exposed portion photoresist dissolves, use rapidly pure washed with de-ionized water clean, then use high-purity elevated pressure nitrogen air gun to be dried up by sample; Finally, by having carried out the wafer of development treatment, having put and toasting 10min on hot plate, temperature is 85 DEG C;
The sputter coating that d.c. sputtering machine carries out platinum/titanium metal thin film put into by step 3, sample, is filled with argon gas during sputtering, makes pressure maintain approximate 4Pa;
Step 4, utilize supersonic wave cleaning machine use acetone the sample having plated platinum/titanium metal thin film is peeled off, wash plating titanium on a photoresist off; With alcohol and high-purity deionized water to the wafer cleaning after peeling off, after having cleaned, dried up by sample with high-purity elevated pressure nitrogen air gun, the thickness recording the titanium metal film of now sample is 90nm;
Step 5, sample is put into high temperature furnace, carries out the prediffusion of platinum/titanium metal thin film, time and temperature be respectively 5h, 1100 DEG C, ensure that titanium ion enters lithium columbate crystal inside;
Step 6, sample to be put into by mole fraction than the Li2CO being 68mol%:32mol%
3and Nb
2o
5in the rich lithium crucible that mixed-powder sinters into, below sample, add one deck platinum pad; By crucible with after rich lithium powder sealing, put into box high-temperature energy-conservation stove and carry out rich lithium VTE process; The running-course control of box-type high-temperature furnace is at four-stage: the stage (1), in 50min, rise to 400 DEG C by 25 DEG C; Stage (2), 400 DEG C be heated to 1100 DEG C, used time 140min; Stage (2), at 1100 DEG C, maintain 30h; Stage (4), be down to room temperature by 1100 DEG C.
Step 7, priority particle diameter are that the burnishing powder of 20 μm, 7 μm, 1.5 μm carries out sample polishing, then carry out polishing with polishing fluid to the end face of sample;
The lithographic processing method of step 8, again employing step 2, the optical waveguide end face of the sample of step 7 gained produces cycle pattern, and the cycle of the electrode mask plate selected in photoetching process is 45 μm; After photoetching completes, the thickness recording photoresist is 4.5 μm; Then, plate one deck aluminum metal film at the sample surfaces finishing photoetching, strengthen electric conductivity; Sample is put into liquid electrode fixture, and use silica gel pad good seal; Afterwards, in liquid electrode fixture, inject saturated LiCl solution, the appearance of bubble should be avoided in the process injecting solution; Access high-voltage square-wave pulse generating system, the setting polarization time is 0.85s, and the output voltage of high-voltage DC power supply is 4.0kV.
After step 9, polarization, the metal electrode of sample surfaces is wiped, remove the LiCl liquid of sample surfaces, clean up, i.e. Ti:PPLN optical waveguide.
2. period polarized titanium diffusion near-stoichiometric ratio lithium niobate strip optical waveguide preparation method as claimed in claim 1, it is characterized in that, under described liquid electrode fixture is operated in high-voltage DC power supply, specifically comprise: connect first, second divider resistance respectively at the positive and negative electrode of high-voltage DC power supply; First divider resistance is connect a positive pole, the second divider resistance is connect a negative pole, described positive pole and described negative pole are connected the liquid electrode fixture filling LiCl respectively, and titanium diffused optical waveguide sample is placed on and fills in the liquid electrode fixture of LiCl.
3. a period polarized titanium diffusion near-stoichiometric ratio lithium niobate strip optical waveguide, this product is formed based on lithium columbate crystal sample, it is characterized in that, on+Z the face of described lithium columbate crystal sample, the periodical domain reversal structure formed after there is the slab waveguide structure that diffuseed to form by titanium and the polarization process by periodic electrode.
4. period polarized titanium diffusion near-stoichiometric ratio lithium niobate strip optical waveguide preparation method as claimed in claim 2, it is characterized in that, under the liquid electrode fixture that described polarization process uses is operated in high-voltage DC power supply, specifically comprise: connect first, second divider resistance respectively at the positive and negative electrode of high-voltage DC power supply; First divider resistance is connect a positive pole, the second divider resistance is connect a negative pole, described positive pole and described negative pole are connected the liquid electrode fixture filling LiCl respectively, and titanium diffused optical waveguide sample is placed on and fills in the liquid electrode fixture of LiCl.
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| CN104880887A (en) * | 2015-06-19 | 2015-09-02 | 天津大学 | Method for manufacturing near-stoichiometry PPLN all-optical wavelength converter low in Mg doping |
| CN106033167A (en) * | 2015-12-02 | 2016-10-19 | 派尼尔科技（天津）有限公司 | Near stoichiometric ratio low-doped Mg:PPLN all-optical wavelength converter |
| CN107204750A (en) * | 2016-03-18 | 2017-09-26 | 太阳诱电株式会社 | Acoustic wave device |
| CN108166065A (en) * | 2017-12-12 | 2018-06-15 | 南京大学 | A kind of method for preparing lithium niobate single crystal thin film domain structure |
| CN108301044A (en) * | 2018-02-11 | 2018-07-20 | 陕西师范大学 | A kind of preparation method of nonlinear optical crystal |
| CN110318098A (en) * | 2019-07-30 | 2019-10-11 | 江西匀晶光电技术有限公司 | A kind of substrate of SAW device and preparation method thereof with artificial farmland construction |
| CN110764188A (en) * | 2019-10-23 | 2020-02-07 | 天津大学 | Preparation method of lithium niobate ridge type optical waveguide |
| CN110764185A (en) * | 2019-10-12 | 2020-02-07 | 天津大学 | Preparation method of low-loss lithium niobate thin film optical waveguide |
| CN111722318A (en) * | 2020-06-29 | 2020-09-29 | 中国科学院上海微系统与信息技术研究所 | Preparation method of lithium niobate waveguide based on internal diffusion and ion implantation |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104880887A (en) * | 2015-06-19 | 2015-09-02 | 天津大学 | Method for manufacturing near-stoichiometry PPLN all-optical wavelength converter low in Mg doping |
| CN106033167A (en) * | 2015-12-02 | 2016-10-19 | 派尼尔科技（天津）有限公司 | Near stoichiometric ratio low-doped Mg:PPLN all-optical wavelength converter |
| CN107204750A (en) * | 2016-03-18 | 2017-09-26 | 太阳诱电株式会社 | Acoustic wave device |
| CN108166065A (en) * | 2017-12-12 | 2018-06-15 | 南京大学 | A kind of method for preparing lithium niobate single crystal thin film domain structure |
| CN108301044A (en) * | 2018-02-11 | 2018-07-20 | 陕西师范大学 | A kind of preparation method of nonlinear optical crystal |
| CN110318098A (en) * | 2019-07-30 | 2019-10-11 | 江西匀晶光电技术有限公司 | A kind of substrate of SAW device and preparation method thereof with artificial farmland construction |
| CN110764185A (en) * | 2019-10-12 | 2020-02-07 | 天津大学 | Preparation method of low-loss lithium niobate thin film optical waveguide |
| CN110764185B (en) * | 2019-10-12 | 2021-01-01 | 天津大学 | Preparation method of low-loss lithium niobate thin film optical waveguide |
| CN110764188A (en) * | 2019-10-23 | 2020-02-07 | 天津大学 | Preparation method of lithium niobate ridge type optical waveguide |
| CN110764188B (en) * | 2019-10-23 | 2021-01-05 | 天津大学 | Preparation method of lithium niobate ridge type optical waveguide |
| CN111722318A (en) * | 2020-06-29 | 2020-09-29 | 中国科学院上海微系统与信息技术研究所 | Preparation method of lithium niobate waveguide based on internal diffusion and ion implantation |
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