CN1790846A - Method for making laser-electric absorption modulator-spot-size converter single chip integration - Google Patents
Method for making laser-electric absorption modulator-spot-size converter single chip integration Download PDFInfo
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- CN1790846A CN1790846A CN 200410098493 CN200410098493A CN1790846A CN 1790846 A CN1790846 A CN 1790846A CN 200410098493 CN200410098493 CN 200410098493 CN 200410098493 A CN200410098493 A CN 200410098493A CN 1790846 A CN1790846 A CN 1790846A
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Abstract
The manufacture method for laser-electroabsorption modulator-analog spot converter comprises: epitaxial growing a buffer layer, a lower waveguide layer, a space layer and an intrinsic layer by turns on substrate; growing silicon dioxide on intrinsic layer with PECVD technique; removing the intrinsic layer for second growth for source zone and intrinsic layer, etching the upper/lower waveguide structure of analog spot converter; epitaxial growing for third time thin P-type indium phosphide layer and cover layer and ohmic contact layer; re-etching the single ridge strip guidewave structure for laser and electroabsorption modulator; etching isolation channel for injecting He+; removing In-Ga-As contact layer of analog spot converter; growing silicon dioxide insulation layer by thermal oxidation method; depositing polyimide onsides of said modulator; opening the electrode window and etching the electrode figure for laser and modulator; sputtering P electrode; reducing the substrate of extension plate to cleavage into die after sputtering N electrode.
Description
Technical field
The present invention relates to make a kind of novel semiconductor laser and the method for electroabsorption modulator and spot-size converter single chip integrated device by wet etching and photoetching process commonly used.
Background technology
Along with the development of advanced information society, high-speed transfer, processing and the storage of vast capacity and long range information are very crucial technology.Be long distance communication arterial grid, wide area network, or the local area network (LAN) of short distance communication, Access Network, short distance data connect, and light exchange etc. all needs a large amount of high-performance, opto-electronic device comes the function of supporting network cheaply.In Access Network is used, specific requirement to light emission module is (referring to Optical and quantumElectronics, Vol30,1998, pp.3284-3293): (1) is module cheaply, comprising: device, the modular structure of a, novelty, b, full sheet manufacture craft, c, coupling encapsulation technology are to reduce the technical process of encapsulation time and encapsulation, d, reliable verification method; In existing technology, the number of devices of using is many to be to limit the principal element that cost reduces with used coupling time length, must adopt breakthrough technology to produce on a large scale in addition, adopt material, device cheaply, reduce to use the quantity of device, adopt standardized device, to enlarge market all extremely important to reducing cost; (2) usability of environment and reliability, promptly can be in high temperature, high humidity and wide warm area the work of temperature.From above-mentioned requirement, the application that mixes the suitable Access Network of integrated optical module cheaply of development recently.
For improving module output, following technology is necessary: passive alignment technique, planar light wave circuit platform (PLC), (SSC) is integrated for laser and spot-size converter.Band V-type raceway groove based on silicon (Si) substrate also is developed with the waveguide platform that has adiabatic wedge type spot-size converter simultaneously.Passive alignment technique can reduce the time of aligning, and its only needs to aim at mark on device and variation that needn't detection power.The PLC technology can provide the silicon dioxide (SiO of large-numerical aperture of coupling usefulness simultaneously
2) table top (provide high-frequency coupling, fixing etc.) of waveguide (can reduce the coupling efficiency with monomode fiber) and Si, adopt face-down bonding technique on PLC, to weld LD and PD and form optical transceiver module, adopt face-down bonding technique simultaneously, optics such as the necessary lens of the encapsulation technology that can discard tradition, speculum, prism.Have LD and SiO horizontal, vertical or mixing shape model transducer
2High coupling efficiency is arranged between the waveguide, and the tolerance of coupling also increased, therefore can reduce coupling cost (referring to IEEE Photon Technol.Lett., Vol.6 (12), 1994, pp.1412-1414 and Appl.Phys.Lett., vol.64 (5), 1994, pp.539-541 andProc.SPIE, Vol.3286,1998, pp.2-16).
Optical semiconductor laser (LD), the making and the encapsulation of the monolithic integrated functionality device (hereinafter to be referred as LD-EA-SSC) of electroabsorption modulator (EA) and spot-size converter (SSC), then integrated use above-mentioned various technology.Particularly the development of dense wave division multipurpose (DWDW) system is significant to optical-fiber network for this device: (1) is along with energy band engineering research deepens continuously, by changing the band structure of Multiple Quantum Well (MQW), can produce low threshold value, high efficiency, two-forty, lowly warble, high-power, long-life laser is (referring to Bell labs Technical J., Jan.-Mar.1999, pp.150-167), these have original application in the all-optical network that with the WDM technology is core.(2) EA have at a high speed, high extinction ratio and the low noise of warbling, volume is little, driving voltage is low and be easy to integrated advantage, the external modulator and the signal generator that can be used for dwdm system and time division multiplexing (OTDM), also can make optical switch (referring to OFC ' 2002, pp338 and OFC ' 98, pp287 and IEEE Photon.Technol.Lett., Vol.14, No.6, pp792,2002 and Appl.Phys.Lett., Vol.69, No.18,1996, pp2626).(3) the round hot spot that spot-size converter can become the ellipse light spot of LD and EA output and the intrinsic hot spot of monomode fiber (SMF) is complementary, thereby raising device and SiO
2The coupling efficiency of waveguide (optical fiber) increases the coupling tolerance, reduces the coupling cost.For high power semiconductor lasers (amplifier), integrated spot-size converter also has the another one benefit, except improving coupling efficiency and offset tolerance, can also improve working life and peak power output (referring to IEEE J.of Quantum Electron.Vol.23, No.6,1987, pp712-719).
Famous in the world company is as AT﹠amp; T, NTT, Lucent have all released LD-EA-SSC device separately (referring to Electron.Lett, 1996,32:111 and IEEE J.Select.TopicsQuantum Electron, 2000,6:19 and J.Lightwave Technol, 2002,20:2052 andIEEE Photon.Technol.Lett, 2002,14:27and IEEE Photon.Technol.Lett, 2003,15:679).The method of making has technologies such as selection region growing (SAG) and butt joint (butt-joint) growth.Divide on the structure, two kinds of ridge waveguide structure and buried structures are arranged.Butt-joint can be optimized respectively laser and modulator and spot-size converter, can obtain the good LD-EA-SSC integrated device of performance.But the manufacture craft more complicated, the extension number of times is more, cost is high, laser and modulator junction, the crystal mass of modulator and spot-size converter junction is relatively poor, is not easy to obtain the butt joint waveguide of high coupling efficiency.By contrast, the SAG method by control mask width, at interval, growth pressure, growth temperature etc. can obtain the ducting layer of different band-gap energies by simple epitaxial growth once, do not need complicated repeatedly growth course.Therefore use the SAG method can once form LD, the waveguiding structure of EA and SSC, manufacture craft is simple, laser and modulator coupling efficiency height, but need the growth of optimization material meticulously.
Common spot-size converter has three kinds of forms: vertical wedge shape (vertical taper) is (referring to J.Lightwave Technology, 1999,17:1255), horizontal wedge shape (lateral taper) is (referring to IEEE Photon.Technol.Lett, 1994,6:170), twi guide structure (double core) is (referring to IEEE Photon.Technol.Lett, 1997,9:1084).Three kinds of spot-size converters have pluses and minuses separately: vertical wedge-shaped waveguide thickness gradually changes from the active area to the output end face.The duct width of horizontal wedge shape reduces from the active area to the end face gradually.Twi guide structure is that top active waveguide is the horizontal wedge shape, below passive wave guide be responsible for and the optical fiber coupling.For the wedge-shaped waveguide of horizontal direction, can make by the photoetching and the etching process of routine.But the wedge-shaped waveguide of vertical direction is not all right, must use special growth or caustic solution just can obtain.For example adopt selectivity butt joint (SAG butt-joint) or adopt the technology of corrosion gradually just can reach, adopt the method, the extension number of times is more, the butt joint interface transition of EA and SSC is bad, coupling loss is big, and device repeated poor is not suitable for large-scale production.And the twi guide structure integrated platform that is active device and passive device, can adopt disposable epitaxial growth to form, can optimize simultaneously the component or the size that go up lower waveguide layer and space layer respectively, promptly can the band gap and the size of active device and passive device be optimized respectively.The light of last ducting layer carries out the phase place coupling by space layer and following waveguide: last ducting layer is vertically being made wedge shape, transmit certain distance after, last waveguide reaches cut-off condition makes the light of waveguide be coupled to down waveguide adiabaticly.Optimize wedge dimensions, both can reduce loss, can make the contraction in length of device again.
Although the report of many lasers, electroabsorption modulator and spot-size converter single chip integrated device is arranged in the world, the following shortcoming of ubiquity:
(1) the most of buried structure that adopts of laser and modulator, extension often, complex process, the reliability of device is low.
(2) spot-size converter adopts vertical wedge shape, adopt to select butt joint epitaxy technology or technology such as corrosion gradually, the crystal mass of modulator and spot-size converter connection place is relatively poor, be not easy to obtain the butt joint waveguide of high coupling efficiency, simultaneously, interface processing is difficulty very, and facular model is easy in the butt joint interface variation, the poor repeatability of element manufacturing, process allowance is little.
(3) though laser that has and electroabsorption modulator also adopt the butt joint growing technology, how same existence obtains the problem of good butt joint interface.
(4) laser and modulator adopt buried structure, are difficult to obtain the very little electroabsorption modulator of electric capacity, and modulation bandwidth is restricted.
Summary of the invention
In order to overcome above-mentioned shortcoming, the objective of the invention is to, provide a kind of laser-electric absorption modulator-spot-size converter single chip integrated manufacture method, utilize and select region growing (SAG) technology and double waveguide technology design and made a kind of novel semiconductor laser, electroabsorption modulator and spot-size converter single chip integrated device.Advantages such as this device has the simple maturation of technology, the extension number of times is few, cost of manufacture is low, device performance is good.
The single chip integrated manufacture method of a kind of laser-electric absorption modulator-spot-size converter of the present invention is characterized in that, comprises following making step:
Step 1: the thin InGaAsP intrinsic layer of epitaxial growth n type indium phosphide resilient coating, lower waveguide layer, InP space layer, 1.1Q successively on n type indium phosphide substrate;
Step 2:, and carve and select the mask of region growing right with PECVD technology growthing silica on the InGaAsP intrinsic layer of 1.1Q;
Step 3: remove the InGaAsP intrinsic layer of uppermost 1.1Q, grow for the second time active area and thin indium phosphide intrinsic layer;
Step 4: remove uppermost indium phosphide intrinsic layer, carve the last waveguiding structure of spot-size converter simultaneously;
Step 5: utilize self-registered technology to carve the following waveguiding structure of spot-size converter then;
Step 6: p type phosphorization phosphide indium layer and 1.1Q etching stop layer that epitaxial growth for the third time is thin, p type indium phosphide cap rock, highly doped p type indium gallium arsenic ohmic contact layer;
Step 7: the single ridge waveguiding structure that carves laser and electroabsorption modulator part again;
Step 8: carve the isolating trenches between laser and the electroabsorption modulator, and isolating trenches and laser and electroabsorption modulator ridge table top both sides are carried out He
+Inject;
Step 9: the indium gallium arsenic contact layer that removes the spot-size converter district;
Step 10: with thermal oxidation process growthing silica insulating barrier;
Step 11:, and it is cured at electroabsorption modulator two outgrowth polyimides;
Step 12: the electrode window through ray of leaving laser and electroabsorption modulator;
Step 13: the electrode pattern that carves laser and electroabsorption modulator;
Step 14: sputter p electrode;
Step 15: the epitaxial wafer substrate thinning behind the sputter n electrode, is cleaved into tube core through scribing.
Wherein the thickness of step 1 lower waveguide layer of growing will be between 45～50nm, and band gap wavelength is 1.1 μ m; And the lattice constant match of necessary and indium phosphorus substrate, n type doping content is 10
18/ cm
3Magnitude; The thickness of space layer should be at 0.15～0.3 μ m, and n type doping content is 10
17/ cm
3Magnitude.
Wherein the uniformity and the density of the silicon dioxide of growing with PECVD in the step 2 must be guaranteed, otherwise will can not get guaranteeing at SAG growth quality subsequently; The thickness of silicon dioxide is 150nm, and the mask width is 30 μ m, is spaced apart 15 μ m; The wavelength offset amount laser district and the large tracts of land district can reach 60nm; Under the certain situation in the right interval of growth temperature, growth pressure and mask, have only the wavelength of regulating laser by the width of regulating mask, width is wide more, and laser wavelength offset amount long more and the large tracts of land district is big more.
Wherein active area comprises the quantum well in 10 cycles, and in the large tracts of land district, the thickness of each compressive strain InGaAsP quantum well is 6～7nm, and dependent variable is between 0.3%～0.4%; This outwork is the quaternary InGaAsP, and dependent variable is between-0.3%～-0.4%, and band gap wavelength is 1.2 μ m, and building thick is between 5～7nm; The thickness of light limiting layer is at 80～100nm; Active area reaches up and down, and light limiting layer undopes.
Growth one deck InGaAsP intrinsic layer on extension active structure wherein, its thickness is about 30nm; Before diauxic growth, must remove it, to keep fresh growth interface.
Wherein in step 4, must adopt the excessive erosion technology to make the terminal width of spot-size converter active area output be less than 0.5 μ m.
Wherein in step 8, must adopt the method for opening isolating trenches and ion injection could satisfy the requirement that electricity is between the two isolated between laser and electroabsorption modulator, after employing the method, isolation resistance reaches 100K Ω at least.
Wherein in step 9, must remove the indium gallium arsenic contact layer in spot-size converter district, because the ABSORPTION EDGE of indium gallium arsenic contact layer is 1.67 μ m, if do not remove this layer, in the spot-size converter district, along with the increase gradually of hot spot, the absorption loss of indium gallium arsenic is more and more obvious; In like manner, the P type depth of cover of requirement in step 6 must be greater than 1.8 μ m.
Wherein when the ridge structure of photoetching laser and electroabsorption modulator part, the ridge up and down with the spot-size converter of die sinking for the first time aligns as far as possible, can reduce the radiation loss of light like this.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the structural representation of LD-EA-SSC;
Fig. 2 is the PL spectrogram in LD district and EA district;
Fig. 3 is the light-current curve diagram of modulator when adding reverse biased;
Fig. 4 is the far-field distribution figure of laser rear end face (a) and spot-size converter end face (b);
Fig. 5 is the graph of relation of device capacitor and reverse voltage;
Fig. 6 is the used mask figure of selective epitaxy growth.
Embodiment
The present invention utilizes double waveguide technology and selection region growing technology to develop a kind of new structure to make semiconductor laser (LD), electroabsorption modulator (EA) and spot-size converter (SSC) monolithic integrated device (hereinafter to be referred as LD-EA-SSC).The structure of LD-EA-SSC is seen Fig. 1.As seen from Figure 1, this device only needs three low pressure organic metal vapour phase epitaxies (being called for short LP-MOVPE).Wherein once for selecting region growing.Utilize to select region growing technology, can obtain different growth rates at LD and EA, wherein LD is rich In growth, and growth rate is higher than the EA district, and band gap width is less than the EA district, and promptly the PL spectrum wavelength in LD district is than the EA head of district.By selecting different mask width and different growth pressure and temperature, can obtain your necessary wavelength offset amount.In our experiment, the width of mask is 30 μ m, is spaced apart 15 μ m, growth pressure 22mbar, 655 ℃ of growth temperatures.The PL spectrum wavelength 1500nm in EA district, and LD is 1560nm, about offset 60nm.LD and EA adopt single ridge structure, and twi guide structure is buried in the SSC employing.Ridge waveguide technology is simple, and the extension number of times is few, the reliability height, and the electric capacity of EA can be done very lowly simultaneously, and modulation rate can be very high; And buried structure can improve the facular model characteristic greatly.The entire device compatibility ridge waveguide and bury the advantage of waveguide, overcome shortcoming separately simultaneously.The length of LD is 300 μ m, and the length of the isolating trenches of LD and EA is 50 μ m, and the length of EA is 200 μ m, and the length 300 μ m of SSC, the length of entire device is 850 μ m.In the SSC part, active go up the waveguide bar wide from 3 μ m linear change to 0 μ m, be wedge shape; The passive wide 8 μ m of waveguide bar down, thickness is about 50nm, the thickness of space layer is 0.2 μ m.In the SSC district, the light of last ducting layer carries out the phase place coupling by space layer and following waveguide: last ducting layer laterally is being wedge shape, transmit certain distance after, last waveguide reaches cut-off condition makes the light of waveguide be coupled to down waveguide adiabaticly.In case optical transmission is to waveguide down, then facular model is fully by waveguide decision down.Because the thickness of waveguide is thinner down, band gap wavelength short (1.1 μ m), little with the refringence of InP, belong to weak restriction waveguide, it is big that the size of hot spot becomes gradually.When arriving the output end face of SSC, its spot size can be mated (about the about 5 μ m of monomode fiber intrinsic spot radius) with the mode sizes of monomode fiber.Thereby improve the coupling efficiency of device and monomode fiber.
This structure composition has utilized ridge waveguide, has buried waveguide, the advantage of quantum well effect, strain effect and double waveguide technology and selection region growing technology.Utilize the LD-EA-SSC of this structure fabrication, have advantages such as power output is big, slope efficiency is high, extinction ratio is big, far-field divergence angle is little.Manufacture method is very easy simultaneously, only needs LP-MOVPE three times, utilizes conventional photoetching and wet corrosion technique just can finish.Utilize this structure can also make the monolithic integrated device of spot-size converter+image intensifer+electroabsorption modulator+spot-size converter.
See also Fig. 1, the present invention utilizes LP-MOVPE growing method and conventional photoetching and wet corrosion technique, makes a kind of LD-EA-SSC that can serve as light emission module on local area network (LAN), and making step is as follows:
(1) epitaxial growth one deck n type indium phosphide resilient coating 11 and lower waveguide layer 12 (thickness 50nm, band gap wavelength are 1.1 μ m) on n type indium phosphide substrate 10;
(2) growth one deck 0.2 μ m indium phosphide space layer 13;
(3) the InGaAsP intrinsic layer (not shown) that growth one deck 30nm is thick (band gap wavelength is 1.1 μ m, is called for short the 1.1Q layer);
(4) utilize the PECVD technology at the thick SiO of 1.1Q layer growth 150nm
2
(5) utilize corresponding photolithography plate to carve SiO in the LD district
2Mask is to (not shown), and the width of mask is 30 μ m, interval 15 μ m, cycles 300 μ m;
(6) on be carved with the right epitaxial wafer of mask the growth under light limiting layer (thickness 100nm, band gap wavelength are 1.2 μ m);
(7) growth compressive strain Multiple Quantum Well 14 (being called for short MQW) active area on following light limiting layer;
(8) follow light limiting layer (thickness 100nm, band gap wavelength 1.2 μ m) and thin indium phosphide intrinsic layer (not shown) on growing on the MQW;
(9) utilize 4: 1 hydrochloric acid solution to erode thin indium phosphide intrinsic layer, utilize HF acid corrosion SiO
2Mask is right;
(10) utilize corresponding photolithography plate that LD and EA are partly sheltered, adopt wet corrosion technique to carve SSC 30 upper carinate shapes;
(11) utilize self-registered technology to carve the following waveguide in SSC 30 districts then;
(12) regrowth p type indium phosphide cap rock 15 and highly doped p type indium gallium arsenic (InGaAs) Ohmic electrode contact layer 23;
(13) adopt corresponding photolithography plate, SSC30 is partly sheltered, carve the ridge waveguide structure of LD50 part again;
(14) carve electric isolating trenches 16 between laser 50 and the electroabsorption modulator 40, fall the InGaAs contact layer of isolating trenches 16 with 311 solution corrosions;
(15) carry out He at the isolating trenches 16 of laser 50 and electroabsorption modulator 40 and the ridged table top both sides of laser 50 and electroabsorption modulator 40
+ Injection 17;
(16) utilize thermal oxidation technique growth SiO
2Insulating barrier 21;
(17), and be cured at EA both sides deposit polyimides (polyamide) 20.
(18) open electrode window through ray (not shown);
(19) photoetching electrode pattern;
(20) sputter P electrode (Ti/Pt/Au);
(21) band glue separates P electrode 18;
(22) behind epitaxial wafer substrate thinning to 100 μ m, sputter n (Au/Ge/Ni) electrode 19, be cleaved into the tube core of 300 μ m * 850 μ m through scribing.
Wherein lower waveguide layer 12, upper and lower light limiting layer are the quaternary InGaAsP material that is complementary with substrate indium phosphide lattice constant.Active area comprises the quantum well in 10 cycles.The thickness of each compressive strain InGaAsP quantum well is about 6～7nm at EA and SSC district, and dependent variable is between 0.3%～0.4%.This outwork is the quaternary InGaAsP, and thick at the base in EA and SSC district is between 6～7nm, and dependent variable is between-0.3%～-0.4%, and band gap wavelength is 1.2 μ m.The speed of growth growth factor in the growth conditions assurance SAG district that adopts (t2/t1, t2: the growth rate of SAG, t1: the growth rate of plane area) reach 1.3～1.4.The thickness of p type indium phosphide covering 15 should be thicker than 1.8 μ m.Light enters indium gallium arsenic Ohmic electrode contact layer 23 otherwise have greatly in the SSC district, increases absorption loss, and is very big to the influence of SSC output facula pattern simultaneously.
Wherein the ridge waveguide structure of the last lower carinate shape of SSC and LD and EA both can adopt wet etching or dry etching, also the mode that can adopt dry etching to combine with wet etching.
The advantage of this structure is:
1, compatible ridge waveguide and bury the advantage of waveguide has overcome shortcoming separately simultaneously;
2, descend waveguide not need to carry out repeatedly repeatedly growing of InP and InGaAsP and adjust down the band gap wavelength of waveguide, reduced the growth number of times of LP-MOVPE.
3, need not specially to increase etching stop layer, each layer and InP space layer have all played the effect of etching stop layer naturally in the waveguiding structure when wet etching.
4, the making that utilizes conventional wet etching and photoetching process just can finish device need not to adopt expensive photoetching and etching processs such as electron beam graph exposure, and device cost reduces greatly.
5, utilize selection region growing MOCVD technology, one time extension just can grow out the waveguiding structure of LD, EA and SSC, can accurately control the wavelength offset amount between them simultaneously, and the whole extension number of times of device only needs three times;
6, adopt at EA both sides deposit polyimide, the EA total capacitance is reduced, improve the modulation rate of EA simultaneously.
7, made full use of quantum size effect, promptly energy level is discrete, and the density of states is stepped distribution, so its internal quantum efficiency is higher, and the differential gain is bigger.
8, make full use of the strain energy band engineering, introduced compressive strain in the quantum well, further separated heavy hole band and light hole band in the valence band, significantly reduced mutual absorption and auger recombination between the valence band; In addition, the introducing of compressive strain diminishes the heavy hole effective mass, thereby reduces the density of states, causes population to be easy to counter-rotating, thereby reduces threshold value and the noise figure of LD.
9, the light restriction factor of LD and EA is bigger, so LD just can obtain high-gain under the electric current of appropriateness, so the threshold current of the LD of this device is little, power output is big, the slope efficiency height, and EA all has bigger extinction ratio under direct current and RF.
10, this structure optimization design degree of freedom is bigger, and the band gap and the size of active waveguide and passive wave guide is optimized respectively, the SSC output end face almost can obtain sub-circular and and the hot spot that almost mates of monomode fiber intrinsic facular model.Far-field divergence angle can reach 18 ° and 20 ° respectively and the monomode fiber coupling efficiency can reach 3dB in level and vertical direction, and 1-dB offset tolerance reaches in level and vertical direction ± 2.8 μ m and ± 2.4 μ m.
This device comprises laser (LD), electroabsorption modulator (EA) and spot-size converter (SSC) as seen from Figure 1.What wherein LD and EA district adopted is single ridge structure, and the SSC employing is to bury twi guide structure.Entire device only needs three LP-MOVPE growths.Wherein the LD active area adopts the SAG growth.
Know that by Fig. 2 the PL spectrum wavelength in laser district is 1.56 μ m, and modulator and spot-size converter district are 1.50 μ m, offset 60nm.Both intensity and half-breadth all differ not quite, and it is the same with the large tracts of land district good to illustrate at the crystal mass of SAG district growth.
Know by Fig. 3, when the modulator reverse biased is 0, device go out luminous power at 4.5mW, threshold current is about 80mA.Along with the increase of reverse biased, the threshold value of laser is also along with increase.When the reverse biased of modulator was 2.5V, the extinction ratio of device was 16.2dB.
As shown in Figure 4, the far-field divergence angle of LD rear end is respectively little 32.0 ° and 48 ° in level and vertical direction.The SSC end is 18 ° and 20 °.Hence one can see that, is oval in the hot spot near field of LD rear end face, and almost rounded at the SSC end face.
Know by Fig. 5, device the total capacitance that records under the frequency of 1MHz under-2V for-0.5pF wherein p-n junction electric capacity be 0.36pF, the electric capacity of electrode pad is 0.14pF.Therefore the modulation rate of this device can reach 12GHz.
As shown in Figure 6, selecting the used mask width of growth is 30 μ m, interval 15 μ m, and length is 600 μ m.These sizes are optimized out by SAG epitaxial growth repeatedly.At MOCVD growth pressure 22mbar, under the condition that growth temperature is 655 ℃, the crystal mass that can grow simultaneously in SAG district and large tracts of land district.The wavelength offset amount in SAG district and large tracts of land district is 60nm simultaneously.
Hence one can see that, and this device manufacture method is easy, and is functional, is well suited in the local area network (LAN) of optical fiber communication as light emission module.If at SSC end plating high-reflecting film (HR), LD rear end face plating anti-reflection film (AR) or plated film (natural cleavage plane) not, this device can be used as ultra-short pulse source again or mode-locked laser uses.
Embodiment:
The present invention relates to the manufacture method of a kind of LD-EA-SSC, comprise following making step:
1, gets 2 inches n-InP substrate after the decontamination of strictness (using ethanol, trichloroethylene, acetone, ethanol heating to boil successively) → pickling (concentrated sulfuric acid soaked 1～2 minute) → washing (deionized water rinsing is more than 50 times) → dry is handled, put into the growth room, 655 ℃ of growth temperatures, growth pressure 22mbar, 75～80 rev/mins of graphite boat rotating speeds.The speed of growth 0.4～0.7nm/s.
2, epitaxial growth n type indium phosphide resilient coating (0.5 μ m is thick), lower waveguide layer (thickness 50nm, band gap wavelength are 1.1 μ m), 0.2 μ m indium phosphide space layer, thin 1.1Q layer (30nm) on n type indium phosphide substrate (100) face;
3, utilize the PECVD technology at the thick SiO of 1.1Q layer growth 150nm
2, it is right to utilize corresponding photolithography plate to carve the mask of SAG growth in the LD district simultaneously, and mask width 30 μ m are spaced apart 15 μ m;
4, fall uppermost 1.1Q layer with 311 solution corrosions, wafer is cleaned again;
5, the indium phosphide intrinsic layer (30nm is thick) that utilizes LP-MOCVD to grow following light limiting layer (thickness 100nm, band gap wavelength are 1.2 μ m), compressive strain quantum well active area, last light limiting layer (thickness 100nm, band gap wavelength are 1.2 μ m) for the second time and approach;
6, use 4HCl: 1H
2O solution removes uppermost indium phosphide intrinsic layer, removes the mask bar with the HF acid solution, utilizes corresponding photolithography plate to carve SSC and goes up waveguide shapes, with 311 solution (3H
2SO
4: 1H
2O: 1H
2O
2) corrosion SSC district active layer InGaAsP.Utilize the width of the last waveguide of the SSC part that in fact the excessive erosion technology obtain to change to linearly about 0.3 μ m, adhere to specification from 3 μ m;
7, remove photoresist with acetone after, recoat and get rid of thick glue, after utilizing corresponding photoetching board to explosure, developing, adopt 1Br: 25HBr: 80H
2The solution of O removes InGaAsP and InP, erodes away the lower carinate shape of SSC.Because above-mentioned solution is non-selective corrosive liquid, therefore can measure and accurately estimate corrosion rate by repeatedly corrosion experiment and step instrument, guarantee to erode to till the InP-buffer.Certainly, we also can utilize the natural etching stop layer of device architecture, use 311 solution corrosion InGaAsP layers respectively, 4HCl: 1H
2The solution corrosion InP of O.But like this gradation etching efficient is low, and particularly under 311 solution corrosions during waveguide 1.1Q, etching time is long;
8, the sample strictness is cleaned up after, be placed on MOCVD chamber growing p-type indium phosphide (100nm), 1.1Q etching stop layer (20nm), p type inp covering (1.8 μ m) and highly doped p type indium gallium arsenic Ohmic electrode contact layer (0.2 μ m);
9, adopt corresponding photolithography plate, SSC is partly sheltered, carve single ridge structure in LD and EA district, wherein the InGaAs contact layer adopts 311 solution corrosions, p type InP 4HCl:1H
2The O solution corrosion erodes to the etching stop layer of 1.1Q always;
10, carve electric isolating trenches between laser and the electroabsorption modulator, fall the InGaAs contact layer of isolating trenches with 311 solution corrosions;
11, on wafer, be coated with the thick glue that gets rid of 5 μ m, utilize corresponding photolithography plate to carve He
+The figure of injection: all carry out He at the isolating trenches of laser and electroabsorption modulator and single ridge table top both sides of laser and electroabsorption modulator
+Injection, injection condition is 50kev/4 * 10
13Cm
-3, 100kev/4 * 10
13Cm
-3, 180kev/4 * 10
13Cm
-3, [0,0,1] direction of injection direction and wafer tilts 7 °;
12, utilize the plasma adhesive supplier to play glue 20 minutes, take out slice, thin piece, put in the acetone soln that boils and remove photoresist, slice, thin piece is cleaned up;
13, divert from one use to another corresponding photolithography plate, the InGaAs contact layer of SSC district top layer is fallen with 311 solution corrosions, simultaneously slice, thin piece is cleaned up;
14, with the SiO of thermal oxidation CVD equipment at sample surfaces grow thick 350nm
2Insulating barrier, 350 ℃ of growth temperatures;
15, be coated with on wafer and get rid of polyimide, the about 2 μ m of thickness utilize corresponding photolithography plate to carve the figure of polyimide, be cured in holding furnace subsequently, condition of cure is incubated 30 minutes for to be raised to 200 ℃ from room temperature, be raised to 300 ℃ from 200 ℃ again, be incubated 30 minutes.Naturally cool to room temperature from 300 ℃ subsequently.Setting up period leads to N
2Protection;
16, utilize the photolithography plate of 8 μ m vertical bars to leave the SiO of laser and modulator
2Electrode window through ray;
17, whirl coating on slice, thin piece, photoetching electrode pattern, and counter-rotating.Umklapp process is that the slice, thin piece after the photoetching is placed in logical the holding furnace of ammonia, is heated to 110 ℃, takes out slice, thin piece and exposes under mask aligner again;
18, sputter P electrode (Ti/Pt/Au);
19, band glue separates the P electrode;
20, behind epitaxial wafer substrate thinning to 100 μ m, the sputter n electrode (Au/Ge/Ni), be cleaved into the tube core of 300 μ m * 850 μ m through scribing, light output end is [011] direction.So far, the technology of finishing entire device is made.
Claims (9)
1. the single chip integrated manufacture method of laser-electric absorption modulator-spot-size converter is characterized in that, comprises following making step:
Step 1: the thin InGaAsP intrinsic layer of epitaxial growth n type indium phosphide resilient coating, lower waveguide layer, InP space layer, 1.1Q successively on n type indium phosphide substrate;
Step 2:, and carve and select the mask of region growing right with PECVD technology growthing silica on the InGaAsP intrinsic layer of 1.1Q;
Step 3: remove the InGaAsP intrinsic layer of uppermost 1.1Q, grow for the second time active area and thin indium phosphide intrinsic layer;
Step 4: remove uppermost indium phosphide intrinsic layer, carve the last waveguiding structure of spot-size converter simultaneously;
Step 5: utilize self-registered technology to carve the following waveguiding structure of spot-size converter then;
Step 6: p type phosphorization phosphide indium layer and 1.1Q etching stop layer that epitaxial growth for the third time is thin, p type indium phosphide cap rock, highly doped p type indium gallium arsenic ohmic contact layer;
Step 7: the single ridge waveguiding structure that carves laser and electroabsorption modulator part again;
Step 8: carve the isolating trenches between laser and the electroabsorption modulator, and isolating trenches and laser and electroabsorption modulator ridge table top both sides are carried out He
+Inject;
Step 9: the indium gallium arsenic contact layer that removes the spot-size converter district;
Step 10: with thermal oxidation process growthing silica insulating barrier;
Step 11:, and it is cured at electroabsorption modulator two outgrowth polyimides;
Step 12: the electrode window through ray of leaving laser and electroabsorption modulator;
Step 13: the electrode pattern that carves laser and electroabsorption modulator;
Step 14: sputter p electrode;
Step 15: the epitaxial wafer substrate thinning behind the sputter n electrode, is cleaved into tube core through scribing.
2. the single chip integrated manufacture method of laser-electric absorption modulator-spot-size converter according to claim 1 is characterized in that, wherein the thickness of step 1 lower waveguide layer of growing will be between 45～50nm, and band gap wavelength is 1.1 μ m; And the lattice constant match of necessary and indium phosphorus substrate, n type doping content is 10
18/ cm
3Magnitude; The thickness of space layer should be at 0.15～0.3 μ m, and n type doping content is 10
17/ cm
3Magnitude.
3. the single chip integrated manufacture method of laser-electric absorption modulator-spot-size converter according to claim 1, it is characterized in that, wherein the uniformity and the density of the silicon dioxide of growing with PECVD in the step 2 must be guaranteed, otherwise will can not get guaranteeing at SAG growth quality subsequently; The thickness of silicon dioxide is 150nm, and the mask width is 30 μ m, is spaced apart 15 μ m; The wavelength offset amount laser district and the large tracts of land district can reach 60nm; Under the certain situation in the right interval of growth temperature, growth pressure and mask, have only the wavelength of regulating laser by the width of regulating mask, width is wide more, and laser wavelength offset amount long more and the large tracts of land district is big more.
4. the single chip integrated manufacture method of laser-electric absorption modulator-spot-size converter according to claim 1, it is characterized in that, wherein active area comprises the quantum well in 10 cycles, in the large tracts of land district, the thickness of each compressive strain InGaAsP quantum well is 6～7nm, and dependent variable is between 0.3%～0.4%; This outwork is the quaternary InGaAsP, and dependent variable is between-0.3%～-0.4%, and band gap wavelength is 1.2 μ m, and building thick is between 5～7nm; The thickness of light limiting layer is at 80～100nm; Active area reaches up and down, and light limiting layer undopes.
5. the single chip integrated manufacture method of laser-electric absorption modulator-spot-size converter according to claim 1 is characterized in that, one deck InGaAsP intrinsic layer of wherein on an extension active structure, growing, and its thickness is about 30nm; Before diauxic growth, must remove it, to keep fresh growth interface.
6. the single chip integrated manufacture method of laser-electric absorption modulator-spot-size converter according to claim 1 is characterized in that, must adopt the excessive erosion technology to make the terminal width of spot-size converter active area output be less than 0.5 μ m in step 4.
7. the single chip integrated manufacture method of laser-electric absorption modulator-spot-size converter according to claim 1, it is characterized in that, wherein in step 8, must between laser and electroabsorption modulator, adopt the method for opening isolating trenches and ion injection could satisfy the requirement that electricity is between the two isolated, after adopting the method, isolation resistance reaches 100K Ω at least.
8. the single chip integrated manufacture method of laser-electric absorption modulator-spot-size converter according to claim 1, it is characterized in that, wherein in step 9, must remove the indium gallium arsenic contact layer in spot-size converter district, because the ABSORPTION EDGE of indium gallium arsenic contact layer is 1.67 μ m, if do not remove this layer, in the spot-size converter district, along with the increase gradually of hot spot, the absorption loss of indium gallium arsenic is more and more obvious; In like manner, the P type depth of cover of requirement in step 6 must be greater than 1.8 μ m.
9. the single chip integrated manufacture method of laser-electric absorption modulator-spot-size converter according to claim 1, it is characterized in that, wherein when the ridge structure of photoetching laser and electroabsorption modulator part, ridge up and down with the spot-size converter of die sinking for the first time aligns as far as possible, can reduce the radiation loss of light like this.
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