CN1909192A - Non-selective etched process for GaAs/AlGaAs crystal material - Google Patents
Non-selective etched process for GaAs/AlGaAs crystal material Download PDFInfo
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- CN1909192A CN1909192A CN 200610111350 CN200610111350A CN1909192A CN 1909192 A CN1909192 A CN 1909192A CN 200610111350 CN200610111350 CN 200610111350 CN 200610111350 A CN200610111350 A CN 200610111350A CN 1909192 A CN1909192 A CN 1909192A
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- gaas
- corrosive liquid
- corrosion
- algaas
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Abstract
The invention relates to a non-selective corrosion method of GaAs/AlGaAs crystal, wherein the present corrosion liquids main are H2SO4:H2O2:H2O as 1:8:8 or 3:3:1 in volume percentage; and the volume ratio between H3PO4:H2O2:H2O is 1:1:10 or 1:1:5, to corrode at room temperate or ice point, which can produce bar semi-conductor but not round. And the inventive corrosion method uses H3PO4 and H2O2, whose volume ratio is H3PO4:H2O2 as 10:25:1, to corrode under 30-60Deg. C, while it mixing the corrosion liquid at the same time.
Description
Technical field
The present invention is a kind of caustic solution that corrodes semi-conducting material GaAs/AlGaAs, belongs to the semiconductor device processing technology field.
Background technology
The employed corrosive liquid of existing employing wet etching methods of making semiconductor devices mainly comprises Sulfuric Acid Series and phosphoric acid series, and the former is as H
2SO
4: H
2O
2: H
2The O volume ratio is respectively the corrosive liquid of 1: 8: 8 or 3: 3: 1, is typical anisotropic etchant, is used for the manufacturing of ridge waveguide device; The latter such as H
3PO
4: H
2O
2: H
2The volume ratio of O is respectively the corrosive liquid of 1: 1: 10 or 1: 1: 5, also has tangible anisotropic etch characteristic.Usually adopt these corrosive liquid corrosion GaAs/AlGaAs crystal, make the bar-shaped semiconductor device.Corrosion process is normally carried out under room temperature or freezing point temperature (0 ℃), and such as operating under room temperature environment, the container that perhaps will fill corrosive liquid places frozen water, to obtain stable corrosion rate; In corrosion process, corrosive liquid is static.
Summary of the invention
Owing to reasons such as crystal orientation and material component and corrosive liquid viscosity are lower, adopt existing corrosive liquid to make circular device, what generally obtain all is the shape that is similar to rhombus.Particularly when circle was smaller, existing corrosive liquid was difficult to erode away satisfactory round-shaped.Lower corrosion temperature and static corrosive liquid state have encouraged the tendency of corrosion on direction.Put it briefly, existing caustic solution shows the corrosion position selectivity in the process of corrosion GaAs/AlGaAs crystal.In order to realize the non-selective etching of GaAs/AlGaAs crystal, the present invention proposes a kind of non-selective etching method of GaAs/AlGaAs crystalline material.
The present invention be achieved in that the corrosive liquid that adopts be 85% H by weight content
3PO
4With weight content be 30% H
2O
2Two kinds of components are formed, and the volume ratio of each component is H
3PO
4: H
2O
2=10～25: 1; Corrosion process is carried out under a certain temperature between 30～60 ℃; Corrosive liquid rotates along same direction in container under external force simultaneously.
The corrosion process of carrying out according to technique scheme has non-selective, can realize eroding away circular GaAs/AlGaAs crystalline substance
| Corrosive liquid and proportioning (volume) | Crystal is corroded | Need the corrosion shape | The corrosive liquid temperature (℃) | Stir speed (S.S.) (rpm) | Corrosion results |
| H 3PO 4∶H 2O 2∶H 2O 1∶1∶10 | GaAs/AlGaAs | Circular | 0 | 0 | Rhombus |
| H 3PO 4∶H 2O 2 20∶1 | GaAs/AlGaAs | Circular | 40 | 100 | Circular |
The purpose of body can obtain smooth uniform circle.The corrosive liquid preparation is convenient, and can use repeatedly.Its effect can be found out from last table.
Embodiment
The present invention's caustic solution employing weight content is 85% H
3PO
4With weight content be 30% H
2O
2The corrosive liquid of two kinds of component preparations, the volume ratio of each component is H
3PO
4: H
2O
2=10～25: 1.Its concrete proportioning is decided on the corrosion rate that will reach, and various execution modes see the following form:
| Sequence number | H 3PO 4And H 2O 2Proportioning (volume ratio) | The corrosive liquid temperature (℃) | Stir speed (S.S.) (rpm) | Corrosion rate (μ m/min) |
| 1 | 10∶1 | 60 | 200 | 3.2 |
| 2 | 15∶l | 50 | 150 | 2.5 |
| 3 | 20∶1 | 40 | 100 | 2.0 |
| 4 | 25∶1 | 30 | 50 | 1.4 |
Adopt the process of the present invention's caustic solution corrosion GaAs/AlGaAs crystal to be, with GaAs/AlGaAs crystal wiped clean; With 5000 rev/mins of rotating speed whirl coatings, used glue is the AZ-5214 positive photoresist then; Baking is 10 minutes before under 90 ℃ of temperature; To version, exposure, development and post bake, produce required circular glued membrane then.Wait that with what handle corroding the GaAs/AlGaAs crystal puts into the corrosive liquid of being prepared, corrosion is carried out in room temperature or under heating as a certain temperature in 30～60 ℃ of scopes, speed with 50～200rpm stirs the corrosive liquid that is contained in the container along same direction simultaneously, perhaps go in ring along same direction and shake the container that holds corrosive liquid and wait to corrode the GaAs/AlGaAs crystal, up to finishing non-selective wet etching by same speed.The present invention's caustic solution can be applicable to adopt the GaAs/AlGaAs crystalline material to make in the process of semiconductor device, as annular cavity laser etc., also can be used in the process of making micro components such as lenticule.
Claims (2)
1, a kind of non-selective etching method of GaAs/AlGaAs crystalline material is characterized in that, the corrosive liquid that adopts be 85% H by weight content
3PO
4With weight content be 30% H
2O
2Two kinds of components are formed, and the volume ratio of each component is H
3PO
4: H
2O
2==10～25: 1; Corrosion process is carried out under a certain temperature between 30～60 ℃; Corrosive liquid rotates along same direction in container under external force simultaneously.
2, according to the described non-selective etching method of claim 1, it is characterized in that, speed with 50～200rpm stirs the corrosive liquid that is contained in the container along same direction, perhaps go in ring along same direction and shake the container that holds corrosive liquid and wait to corrode the GaAs/AlGaAs crystal, up to finishing non-selective corrosion by same speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101113500A CN100435292C (en) | 2006-08-24 | 2006-08-24 | Non-selective etched process for GaAs/AlGaAs crystal material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101113500A CN100435292C (en) | 2006-08-24 | 2006-08-24 | Non-selective etched process for GaAs/AlGaAs crystal material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1909192A true CN1909192A (en) | 2007-02-07 |
| CN100435292C CN100435292C (en) | 2008-11-19 |
Family
ID=37700242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101113500A Expired - Fee Related CN100435292C (en) | 2006-08-24 | 2006-08-24 | Non-selective etched process for GaAs/AlGaAs crystal material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100435292C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103454703A (en) * | 2013-09-12 | 2013-12-18 | 长春理工大学 | Method of manufacturing GaAs micro lens in wet etching method |
| CN105591281A (en) * | 2014-10-21 | 2016-05-18 | 长春理工大学 | Preparation process of grating of distributed Bragg reflector semiconductor laser |
| CN109023531A (en) * | 2018-09-20 | 2018-12-18 | 汉能新材料科技有限公司 | A kind of caustic solution and corrosion liquid formula of arsenide gallium monocrystal dislocation pit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3972770A (en) * | 1973-07-23 | 1976-08-03 | International Telephone And Telegraph Corporation | Method of preparation of electron emissive materials |
| JP3314616B2 (en) * | 1995-10-05 | 2002-08-12 | 株式会社デンソー | High power semiconductor laser device |
| CN1084055C (en) * | 1998-01-06 | 2002-05-01 | 中国科学院半导体研究所 | Efficient LED and its making method |
-
2006
- 2006-08-24 CN CNB2006101113500A patent/CN100435292C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103454703A (en) * | 2013-09-12 | 2013-12-18 | 长春理工大学 | Method of manufacturing GaAs micro lens in wet etching method |
| CN105591281A (en) * | 2014-10-21 | 2016-05-18 | 长春理工大学 | Preparation process of grating of distributed Bragg reflector semiconductor laser |
| CN105591281B (en) * | 2014-10-21 | 2019-11-29 | 长春理工大学 | A kind of distributed Bragg reflector semiconductor laser grating preparation process |
| CN109023531A (en) * | 2018-09-20 | 2018-12-18 | 汉能新材料科技有限公司 | A kind of caustic solution and corrosion liquid formula of arsenide gallium monocrystal dislocation pit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100435292C (en) | 2008-11-19 |
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Granted publication date: 20081119 Termination date: 20100824 |