CN109023531A - A kind of caustic solution and corrosion liquid formula of arsenide gallium monocrystal dislocation pit - Google Patents
A kind of caustic solution and corrosion liquid formula of arsenide gallium monocrystal dislocation pit Download PDFInfo
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- CN109023531A CN109023531A CN201811102134.9A CN201811102134A CN109023531A CN 109023531 A CN109023531 A CN 109023531A CN 201811102134 A CN201811102134 A CN 201811102134A CN 109023531 A CN109023531 A CN 109023531A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
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Abstract
The invention discloses the caustic solutions and corrosion liquid formula of a kind of GaAs monocrystalline dislocation pit, are related to chemical process technology field.The described method includes: the viewing surface including GaAs to be measured { 100 } chip of crystal orientation deflection angle within the scope of preset deflection angle is processed by shot blasting, chip to be measured is obtained；Mixed liquor according to preset ratio preparation hydrofluoric acid, hydrogen peroxide, deionized water is corrosive liquid, and is placed it in etching tank；Etching tank is placed in the water-bath of mixture of ice and water, and maintains etching tank internal corrosion liquid temperature within the scope of 3~8 DEG C；Light source is opened, light is made to be radiated at the corrosion trench bottom；Chip to be measured is placed on hollow out pedestal, and hollow out pedestal is put into the etching tank, is in the chip to be measured on hollow out pedestal in etching tank in the range of exposures of cold light source, and corrosive liquid is enabled to submerge chip to be measured, is reacted 30~50 minutes.The invention can avoid chip fragmentations in corrosion process, and can reduce the amount of eroding.
Description
Technical field
The present invention relates to chemical process technology fields, caustic solution and corruption more particularly to a kind of GaAs monocrystalline dislocation pit
Lose formula of liquid.
Background technique
GaAs is a kind of important semiconductor material.Since its electron mobility is 6 times bigger than silicon, in high frequency field
It closes, as the application of ultrahigh speed, hyperfrequency device and integrated circuit above has more outstanding performance.And in one piece of GaAs core
On piece can handle photooptical data simultaneously, thus be widely used in electronic field.GaAs superior performance and widely used, because
This is just particularly important the control of its quality.Dislocation is a kind of interior microscopic defect of crystalline material, by part in crystal
The sliding in region causes, and is the Fundamentals for determining the crystal dynamics properties such as metal.Dislocation density refers to dislocation line in unit volume
Total length usually indicated in practical applications with the number for forming dislocation etch pit in per surface area, be to measure crystal
One important indicator of technique.The dislocation density of measurement GaAs has important meaning for its manufacturing.
In the prior art, the method for measuring the dislocation density of GaAs (GaAs) generally uses metallographic method, by surface without dirty
After dirty arsenide gallium monocrystal { 100 } chip is placed in the internal corrosion of potassium hydroxide clarified solution 3~7 minutes of 400 DEG C of meltings, sample is taken out
Then piece, cooled to room temperature are rinsed well with deionized water, are dried, the corrosion of dislocation pit is completed.Wherein about chip table
Face quality usually removes the cutting stria of wafer surface by grinding or the modes such as polishing operation, keep wafer surface smooth and
It is flat.
It is found by the applicant that above-mentioned technical proposal has the following disadvantages: that on the one hand, chip is easily broken, and arsenide gallium monocrystal belongs to
Fragile material, being risen sharply by the temperature of room temperature to 400 DEG C can be such that wafer surface temperature increases rapidly, thus because of Waffer edge or inside
Existing dark line or defect and " bursting ", therefore complete chip, the crystalline substance of fragmentation are hardly resulted in by potassium hydroxide etching operation
Piece no matter subsequent wafer rinse sum number dislocation pit link can bring inconvenience；On the other hand, it is big to fall amount for etching,
In the prior art due to potassium hydroxide strong basicity and High Operating Temperature, the amount of eroding of chip substantially between 10~20um, even if
Chip through excessive erosion is not broken up, but the biggish amount of eroding and apparent evidence of corrosion can make chip that can not repeat to make
With being a kind of typical destructive testing method.
Summary of the invention
The embodiment of the present invention provides the caustic solution and corrosion liquid formula of a kind of GaAs monocrystalline dislocation pit, to solve existing skill
In art in the presentation of GaAs monocrystalline dislocation defects, the easy fragmentation of chip to be measured and the excessive problem of the amount of eroding.
According to the first aspect of the invention, the application provides a kind of caustic solution of GaAs monocrystalline dislocation pit, the method
Include:
The viewing surface of GaAs chip to be measured is processed by shot blasting, chip to be measured is obtained；
According to preset ratio prepare hydrofluoric acid, hydrogen peroxide, deionized water mixed liquor be corrosive liquid, and by the corrosive liquid
It is placed in etching tank；
Etching tank is placed in the water-bath of mixture of ice and water, and maintains etching tank internal corrosion liquid temperature in 3~8 DEG C of models
In enclosing；
Light source is opened, light is made to be radiated at the corrosion trench bottom；
Chip to be measured is placed on hollow out pedestal, and the hollow out pedestal is put into the etching tank, makes hollow out pedestal
On chip to be measured be in etching tank in the range of exposures of cold light source, and corrosive liquid is enabled to submerge chip to be measured, reaction 30~50
Minute.
Optionally, the GaAs chip to be measured includes GaAs { 100 } of the crystal orientation deflection angle within the scope of preset deflection angle
Chip.
Optionally, the preset deflection angle range is 0~15 °.It is optionally, described to prepare hydrofluoric acid according to preset ratio,
Hydrogen peroxide, the mixed liquor of deionized water are corrosive liquid, comprising:
The volumetric ratio of hydrofluoric acid, hydrogen peroxide, deionized water in mixed liquor is (2~8): (0.5~2): (88~97).
Optionally, the light source is cold light source of the power in the irradiation range of 100~150W.
Optionally, the hollow out pedestal is corrosion resistant hollow out pedestal.
It is optionally, described that the hollow out pedestal is put into the etching tank, comprising:
Hollow out pedestal is clamped with clip, and hollow out pedestal is put into the etching tank together with chip to be measured；Wherein institute
Stating clip is corrosion resistant clip.
According to the second aspect of the invention, provide a kind of corrosive liquid, the corrosive liquid by hydrofluoric acid, hydrogen peroxide, go from
Sub- water mixing obtains；The volumetric ratio of hydrofluoric acid, hydrogen peroxide, deionized water in the mixed liquor is (2~8): (0.5~2):
(88~97).
The embodiment of the present invention uses 3~8 DEG C as corrosion temperature, needs relative to currently employed molten potassium hydroxide etch recipe
For wanting 400 DEG C of operation temperature, the stress that can reduce hot and cold alternation generation is concentrated, and can be avoided chip in corrosion process
Fragmentation also avoids to ensure that the integrality of corrosion front and back chip, therefore the dislocation distributed intelligence of available entire chip
The troublesome operation spliced again after current wafer is broken；10~20um is eroded in etch recipe compared with the existing technology
It measures, the amount of eroding of chip decreases (≤5um) in the embodiment of the present invention.To reduce destruction of the corrosiveness to chip,
By the present invention treated chip, since the amount of eroding is low, recycling can be recycled, not will cause additional chip wave
Take.
Detailed description of the invention
Fig. 1 is the step flow chart of the caustic solution of one of embodiment of the present invention 1 GaAs monocrystalline dislocation pit；
Fig. 2 is the block schematic illustration of the caustic solution of one of embodiment of the present invention 1 GaAs monocrystalline dislocation pit；
Fig. 3 is in the embodiment of the present invention 1 using the arsenide gallium monocrystal chip dislocation pit point after corrosion corrosion in this programme
Cloth schematic diagram；
Fig. 4 is after the chip after corroding this programme in the embodiment of the present invention 1 is re-grind and corroded with prior art formula
Dislocation pit distribution schematic diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
Embodiment 1
Referring to Fig.1, show a kind of step flow chart of the caustic solution of GaAs monocrystalline dislocation pit, in conjunction with Fig. 2 shows
Block schematic illustration, the application specific steps include:
Step 101: the viewing surface of GaAs chip (10) to be measured being processed by shot blasting, chip to be measured is obtained.
Optionally, the GaAs monocrystal material include N-shaped GaAs mix Si (Si, silicon) semiconductor, p-type GaAs mix Zn (Zn,
Zinc) semiconductor, GaAs mix the semi-insulating type semiconductor of C (C, carbon) and other GaAs monocrystal materials, as long as main body is GaAs monocrystalline
Material is used equally for this programme, the present invention to the type of specific GaAs monocrystal material without limitation.
In concrete application, professional polishing treatment equipment is can be used to the GaAs chip (10) to be measured in the embodiment of the present invention
It is mechanically polished, chemical method also can be used, the GaAs chip (10) to be measured is polished, or is mechanical same with chemistry
The method of Shi Zuoyong is processed, as long as the viewing surface of GaAs chip (10) to be measured is processed into mirror effect, the present invention is to tool
The method of body polishing is without limitation.
Optionally, the GaAs chip to be measured includes GaAs { 100 } of the crystal orientation deflection angle within the scope of preset deflection angle brilliant
Piece.
In crystal, the plane by crystal atomic centers is crystal face, and one group of crystal face that space is parallel to each other is same crystalline substance
Face indicates that crystal face dimensional orientation is different with (hkl), but the identical crystal face of atomic arrangement rule belongs to same family of crystal planes and uses { hkl }
It indicates, { 100 } indicate the one group of equivalent crystal planes connected by symmetry, including (100), (010), (001), (- 100), (0-
10), (00-1), GaAs { 100 } chip are the GaAs chip of above-mentioned family of crystal planes, as long as GaAs chip is that { 100 } family of crystal planes is equal
It can be used for this programme, the present invention is without limitation.
Crystal orientation deflection angle is the angle that the crystal face of crystal is deflected to a direction, in addition to GaAs { 100 } chip, if GaAs
{ 100 } crystal orientation of chip deflects, as long as its crystal orientation deflection angle is in preset range of deflection angles, it can also be used to we
Case, the present invention are without limitation.
Optionally, the preset deflection angle range be 0~15 °, such as deflection angle can be 0 °, 6 °, 10 ° and 15 ° 0~
Any angle within the scope of 15 °.When deflection angle is 0 °, which is GaAs { 100 }；It, should be to when deflection angle is 6 °
Surveying chip is the chip that the crystal orientation based on GaAs { 100 } deflects 6 °；When deflection angle is 10 °, which is based on GaAs
{ 100 } crystal orientation deflects 10 ° of chip；When deflection angle is 15 °, which is the crystal orientation deflection based on GaAs { 100 }
15 ° of chip.
In crystal, the line between any two atom is known as atom column, and direction is known as crystal orientation, in general, using
Orientation index be [hkl] come indicate position of the crystal orientation in crystal to, due to crystal have symmetry, by symmetry in connection with that
A little crystal orientation can be with direction difference, but their period is identical, thus be it is equivalent, these equivalent crystal orientation are that a crystal orientation race uses
<hkl>is indicated, deflects direction for crystal orientation, and the gallium arsenide wafer used due to Vehicles Collected from Market is mainly with to<111>A/B
(in III-V compound monocrystalline, we are accustomed to representing III group atom with A, and B represents V group atom, i.e., in GaAs monocrystalline, A
Ga atom is represented, B represents As atom, and { 111 } A indicates the richness face Ga, and { 111 } B indicates the richness face As, and<111>A and<111>B are respectively
Corresponding crystal orientation) and the deflection of<110>direction based on, this example is illustrated with above-mentioned two class direction, actually to it is specific partially
Turning direction can be without limitation.
Step 102: the mixed liquor according to preset ratio preparation hydrofluoric acid, hydrogen peroxide, deionized water is corrosive liquid (11), and
The corrosive liquid (11) is placed in etching tank (12).
Optionally, the preset ratio is hydrofluoric acid, hydrogen peroxide, deionized water volumetric ratio (2~8): (0.5~2): (88
~97) proportion in proportional region.Such as hydrofluoric acid, dioxygen that it is 2:0.5:88 by volumetric ratio that the ratio of the corrosive liquid, which can be,
Water, deionized water mixed preparing are also possible to the hydrofluoric acid, the hydrogen peroxide, deionized water mixed preparing that are 8:2:97 by volumetric ratio,
Either by hydrofluoric acid, hydrogen peroxide, deionized water volumetric ratio (2~8): (0.5~2): (88~97) are respectively in corresponding range
The proportional preparation of any number.
Preferably, the hydrofluoric acid in the mixed liquor, hydrogen peroxide, deionized water volumetric ratio be 5:1:94.
It should be noted that hydrofluoric acid, hydrogen peroxide, deionized water are mixed with the ratio of volumetric ratio 5:1:94, the corruption of acquisition
Losing liquid has optimal corrosive effect, and the dislocation pit quantity of GaAs chip completely can clearly be presented and position and make corruption
Eating away amount reaches minimum (≤5um), and low corrosion falls amount and chip is recycled after simple polishing treatment, avoids making
At waste.
Step 103: etching tank (12) being placed in the water-bath of mixture of ice and water, and maintains etching tank (12) internal corrosion
Liquid (11) temperature is within the scope of 3~8 DEG C.
Optionally, corrosive liquid temperature setting can be 3 DEG C, be also possible to 8 DEG C, can also be such as 4 DEG C, 5 DEG C, 6 DEG C, 7 DEG C
Deng the arbitrary temp in 3~8 DEG C of temperature ranges.Corrosion reaction is carried out under low temperature environment, the stress for generating hot and cold alternation
Concentrating reduces, and avoids fragmentation due to temperature shock of GaAs chip, ensure that the integrality of corrosion front and back chip, to save
The operation for also needing to splice broken wafers after corrosion reaction sometimes in the prior art, directly obtains the dislocation pit of entire chip
Distributed intelligence.
Step 104: opening light source (13), light is made to be radiated at the etching tank (12) bottom.
Optionally, the light source is cold light source of the power in the irradiation range of 100~150W (W, watt).
Optionally, the power setting of cold light source can be 100W, be also possible to 150W, can also be as 110W, 120W,
130W, 140W etc. are in any power in 100~150W power bracket.Using cold light source, under illumination condition, the activity of crystal
Increase, corrosion reaction is occurred under conditions of low temperature, low concentration.
Optionally, the light source can also be halogen lamp or laser class light source.In this experimental program, corrosion rate also by
Illumination condition influences, and under identical etching condition, illumination can be improved corrosion rate and improve the clarity of corrosion pattern, halogen
Lamp can generate a large amount of heat when irradiating, and influence medical fluid reaction temperature, and laser class light source is since light beam compares concentration, less energy-consuming,
It can be used for local corrosion experiment.Those skilled in the art can select according to specific reaction condition.
Step 105: chip to be measured being placed on hollow out pedestal (14), and the hollow out pedestal (14) is put into the corrosion
In slot (12), it is in the chip to be measured on hollow out pedestal (14) in etching tank (12) in the range of exposures of cold light source (13), and
It enables corrosive liquid (11) to submerge chip to be measured, reacts 30~50 minutes.Optionally, the reaction time can be 30 minutes, can also
To be 50 minutes, when can also be such as 35 minutes, 40 minutes, 45 minutes any within the scope of 30~50 minutes
Between.
Preferably, when reaction temperature is in 3~8 DEG C, cold light lamp power is 100~150W, corrosive liquid proportion be hydrofluoric acid,
Hydrogen peroxide, deionized water volumetric ratio 5:1:94 when, the reaction time is the most suitable reaction time when being 40 minutes upper
Under the conditions of stating, the dislocation pit on GaAs chip sufficiently shows because of corrosiveness after forty minutes for reaction, then is reacted even if being corroded
Reaction continues to occur, and the quantity of dislocation pit and the presentation of position will not generate, apparent complete effect, i.e., in above-mentioned condition
Under, the reaction time 40 minutes were the Best Times for occurring that corrosion reaction sufficiently.
Optionally, the hollow out pedestal is corrosion resistant hollow out pedestal, can be used and does not react nonmetallic with corrosive liquid
Other materials not reacted with corrosive liquid, material of the present invention to hollow out pedestal also can be used in the made hollow out pedestal of material
Without limitation.
It is alternatively possible to clamp hollow out pedestal with clip, hollow out pedestal is put into the etching tank together with chip to be measured
Interior or technical staff also can be used corrosion-resistant gloves or robotic arm manipulation, the present invention to by hollow out pedestal with it is placed on it
Chip to be measured be put into the mode in etching tank without limitation.
Optionally, the clip is corrosion resistant clip, and the made clip of teflon material can be used, also can be used
The materials of other not corrosive liquid reactions, the present invention to the material of clip without limitation.
It specifically, further include after the completion of reaction, hollow out pedestal (14) and chip to be measured (10) being taken out together, are put into
It in de-ionized water tank equipped with deionized water, rinses, drying.
It is alternatively possible to clamp hollow out pedestal with clip, hollow out pedestal is taken out into the etching tank together with chip to be measured
Interior or technical staff also can be used corrosion-resistant gloves or robotic arm manipulation, the present invention to by hollow out pedestal with it is placed on it
Chip to be measured take out etching tank be put into the mode of de-ionized water tank without limitation.Hollow out pedestal is taken together with chip to be measured
Out, it can prevent during clamping or taking, chip to be measured is caused to damage, so that measurement result is inaccurate.In de-ionized water tank
In, chip to be measured is rinsed using deionized water, then dries, accurate dislocation can be obtained by several dislocation pit quantity
Density.
The embodiment of the present invention uses 3~8 DEG C as corrosion temperature, needs relative to currently employed molten potassium hydroxide etch recipe
For wanting 400 DEG C of operation temperature, the stress for reducing hot and cold alternation generation is concentrated, and can be avoided chip in corrosion process
Fragmentation, to ensure that the integrality of corrosion front and back chip, the dislocation distributed intelligence of available entire chip also avoids working as
The troublesome operation spliced again after preceding broken wafers；Compared with the existing technology in etch recipe 10~20um the amount of eroding, this
The amount of eroding of chip is less than 5um in inventive embodiments, and the etch recipe amount of eroding decreases compared with the existing technology, therefore
Damage of the corrosiveness to chip is reduced, by the present invention treated chip, since the amount of eroding is low, weight can be recycled
It is multiple to utilize, it not will cause additional chip waste.
It is rotten referring to the dislocation that Fig. 3 is the chip after the gallium arsenide wafer this programme for being biased to<111>A to (100) 10 ° corrodes
Etch pit is distributed photo.In order to be compared and compare with conventional melt potassium hydroxide method, which is re-grind, will be had
Dislocation etch pit is ground away, and then re-starts corrosion to the chip with molten potassium hydroxide, the dislocation etch pit after corrosion point
Cloth photo is referring to Fig. 4.It can be seen that this programme etch pit position and distribution and tradition by both comparisons etch pit distribution situation
It is completely the same that molten potassium hydroxide method corrodes dislocation out, and this programme dislocation etch pit is easier to identify.Using contact
Calibrator measures Fig. 3 sample etches front and back thickness change only 2um, and thickness change is 15um before and after measurement Fig. 4 sample etches.Irradiation
The introducing of light source improves corrosion rate, improves corrosive effect, needed for dramatically reducing in order to which dislocation etch pit is presented
The thickness to be eroded.The corrosive effect of this programme is clear, and the amount of eroding is small, reduces the waste of chip.
Embodiment 2
The present invention provides a kind of corrosion liquid formulas, comprising:
The corrosive liquid is obtained by hydrofluoric acid, hydrogen peroxide, deionized water mixing.
Optionally, the hydrofluoric acid in the corrosive liquid, hydrogen peroxide, deionized water volumetric ratio be (2~8): (0.5~2):
(88~97).
For example the ratio of the corrosive liquid can be and be mixed by the hydrofluoric acid, hydrogen peroxide, deionized water that volumetric ratio is 2:0.5:88
It closes and prepares, be also possible to the hydrofluoric acid, the hydrogen peroxide, deionized water mixed preparing that are 8:2:97 by volumetric ratio, or by hydrogen fluorine
Acid, hydrogen peroxide, deionized water volumetric ratio (2~8): (0.5~2): (88~97) respectively any number in corresponding range at than
Example is prepared.
Preferably, the hydrofluoric acid in the mixed liquor, hydrogen peroxide, deionized water volumetric ratio be 5:1:94.
It should be noted that hydrofluoric acid, hydrogen peroxide, deionized water are mixed with the ratio of volumetric ratio 5:1:94, the corruption of acquisition
Losing liquid has optimal corrosive effect, and the dislocation pit quantity of GaAs chip completely can clearly be presented and position and make corruption
Eating away amount reaches minimum (≤5um), and low corrosion falls amount and chip is recycled after simple polishing treatment, avoids making
At waste.
The corrosive liquid carries out dislocation pit corrosion with the proportion of low concentration, to crystalline material, in the corrosion reaction of the corrosive liquid
In, the GaAs of wafer surface is oxidized to oxide (gallium oxide and arsenic oxide arsenoxide) by hydrogen peroxide as strong oxidizer, and hydrofluoric acid is made
For acid flux material, burn into dissolution is carried out to the oxide of Surface Properties of GaAs Wafers, the new gallium arsenide surface exposed continues
It aoxidizes, dissolve, reoxidize, be redissolved, constantly recycle in this way, to realize the corrosion to wafer surface dislocation pit.It is hydrofluoric acid, double
The mixture formula of oxygen water and water as a kind of selective corrosion solvent, corrosion rate by crystal crystal orientation, perfection of lattice and
The whether defective influence of crystal.And since corrosive liquid concentration is low, reaction process is more soft, and the amount of eroding is small, will not be to crystalline substance
Body material causes excessive damage.
It should be noted that, in this document, the terms "include", "comprise" or its any other variant are intended to non-row
His property includes, so that the process, method, article or the device that include a series of elements not only include those elements, and
And further include other elements that are not explicitly listed, or further include for this process, method, article or device institute it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including being somebody's turn to do
There is also other identical elements in the process, method of element, article or device.
The embodiment of the present invention is described with above attached drawing, but the invention is not limited to above-mentioned specific
Embodiment, the above mentioned embodiment is only schematical, rather than restrictive, those skilled in the art
Under the inspiration of the present invention, without breaking away from the scope protected by the purposes and claims of the present invention, it can also make very much
Form, all of these belong to the protection of the present invention.
Claims (9)
1. a kind of caustic solution of arsenide gallium monocrystal dislocation pit characterized by comprising
The viewing surface of GaAs chip to be measured is processed by shot blasting, chip to be measured is obtained；
Mixed liquor according to preset ratio preparation hydrofluoric acid, hydrogen peroxide, deionized water is corrosive liquid, and the corrosive liquid is placed in
In etching tank；
Etching tank is placed in the water-bath of mixture of ice and water, and maintains etching tank internal corrosion liquid temperature in 3~8 DEG C of ranges
It is interior；
Light source is opened, light is made to be radiated at the corrosion trench bottom；
Chip to be measured is placed on hollow out pedestal, and the hollow out pedestal is put into the etching tank, is made on hollow out pedestal
Chip to be measured is in etching tank in the range of exposures of cold light source, and corrosive liquid is enabled to submerge chip to be measured, is reacted 30~50 minutes.
2. the method according to claim 1, wherein the GaAs chip to be measured includes crystal orientation deflection angle default
GaAs { 100 } chip in deflection angle ranges.
3. according to the method described in claim 2, it is characterized in that, the preset deflection angle range is 0~15 °.
4. according to the method described in claim 2, hydrogen peroxide is gone it is characterized in that, described prepare hydrofluoric acid according to preset ratio
The mixed liquor of ionized water is corrosive liquid, comprising:
The volumetric ratio of hydrofluoric acid, hydrogen peroxide, deionized water in mixed liquor is (2~8): (0.5~2): (88~97).
5. according to the method described in claim 2, it is characterized in that, the light source is irradiation range of the power in 100~150W
Interior cold light source.
6. according to the method described in claim 2, it is characterized in that, the hollow out pedestal is corrosion resistant hollow out pedestal.
7. according to the method described in claim 2, it is characterized in that, described be put into the hollow out pedestal in the etching tank,
Include:
Hollow out pedestal is clamped with clip, and hollow out pedestal is put into the etching tank together with chip to be measured；The wherein folder
Son is corrosion resistant clip.
8. according to the method described in claim 2, it is characterized in that, it is described after reaction, further includes:
Hollow out pedestal and chip to be measured are taken out together, are put into the de-ionized water tank equipped with deionized water, is rinsed, drying.
9. a kind of corrosive liquid, which is characterized in that the corrosive liquid is obtained by hydrofluoric acid, hydrogen peroxide, deionized water mixing；The corruption
The volumetric ratio of hydrofluoric acid, hydrogen peroxide, deionized water in erosion liquid is (2~8): (0.5~2): (88~97).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110205681A (en) * | 2019-06-03 | 2019-09-06 | 中国科学院半导体研究所 | Indium arsenide single-chip dislocation corrosion liquid and dislocation corrosion detecting method |
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| CN110205681A (en) * | 2019-06-03 | 2019-09-06 | 中国科学院半导体研究所 | Indium arsenide single-chip dislocation corrosion liquid and dislocation corrosion detecting method |
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