JPS5658237A - Light control type etching method - Google Patents

Light control type etching method

Info

Publication number
JPS5658237A
JPS5658237A JP13448779A JP13448779A JPS5658237A JP S5658237 A JPS5658237 A JP S5658237A JP 13448779 A JP13448779 A JP 13448779A JP 13448779 A JP13448779 A JP 13448779A JP S5658237 A JPS5658237 A JP S5658237A
Authority
JP
Japan
Prior art keywords
etching
crystal
etching liquid
liquid
composition ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13448779A
Other languages
Japanese (ja)
Other versions
JPH0133934B2 (en
Inventor
Junichi Nishizawa
Yutaka Koyama
Hiroshi Tadano
Kazuyuki Inoguchi
Yasuo Okuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP13448779A priority Critical patent/JPS5658237A/en
Publication of JPS5658237A publication Critical patent/JPS5658237A/en
Publication of JPH0133934B2 publication Critical patent/JPH0133934B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To facilitate an inspection by a method wherein III-V group compound semiconductor is substantially etched by light irradiation, and not etched under dark condition, and in the etching operation, oxidizing etching solutions such as HF, H2O2, H2O are employed. CONSTITUTION:Under a W lamp 1 the etching liquid, HF49% acqueous solution, H2O2 30% acqueus solution, H2O2, the composition ratio thereof is approx. 1:1:10 is entered in a breaker 2, the infrared filter by water 3 is held midway by the glass jig 4 to prevent the rise of the liquid temperature. A GaAs crystal is put in a Pt basket 6 and dope it in the etching liquid and the crystal 7 is illuminated while the etching liquid is stirred slowly. When the crystal is lifted after the prescribed time, it is washed with water 5. The etching speed control is made by the partial or the pulse illumination, the clear pattern corresponding to the crystal junction or shifting can be formed easily with the etching thickness of less than 1mum. In In Gap, the pattern which clearly indicates the crystallinity can be obtained similarly by making the composition ratio of etching liquid at 1:1:4.
JP13448779A 1979-10-17 1979-10-17 Light control type etching method Granted JPS5658237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13448779A JPS5658237A (en) 1979-10-17 1979-10-17 Light control type etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13448779A JPS5658237A (en) 1979-10-17 1979-10-17 Light control type etching method

Publications (2)

Publication Number Publication Date
JPS5658237A true JPS5658237A (en) 1981-05-21
JPH0133934B2 JPH0133934B2 (en) 1989-07-17

Family

ID=15129470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13448779A Granted JPS5658237A (en) 1979-10-17 1979-10-17 Light control type etching method

Country Status (1)

Country Link
JP (1) JPS5658237A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109023531A (en) * 2018-09-20 2018-12-18 汉能新材料科技有限公司 A kind of caustic solution and corrosion liquid formula of arsenide gallium monocrystal dislocation pit
CN114164002A (en) * 2021-10-29 2022-03-11 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） Chemical corrosive liquid and corrosion method of sphalerite structure compound semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233847A (en) * 1975-09-10 1977-03-15 Matsushita Electric Ind Co Ltd Method of etching gallium phosphate and etching liquid therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233847A (en) * 1975-09-10 1977-03-15 Matsushita Electric Ind Co Ltd Method of etching gallium phosphate and etching liquid therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109023531A (en) * 2018-09-20 2018-12-18 汉能新材料科技有限公司 A kind of caustic solution and corrosion liquid formula of arsenide gallium monocrystal dislocation pit
CN114164002A (en) * 2021-10-29 2022-03-11 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） Chemical corrosive liquid and corrosion method of sphalerite structure compound semiconductor

Also Published As

Publication number Publication date
JPH0133934B2 (en) 1989-07-17

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